CN102621816B - 直写式光刻系统中采用灰度方式提高曝光图形质量的方法 - Google Patents
直写式光刻系统中采用灰度方式提高曝光图形质量的方法 Download PDFInfo
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CN102890430B (zh) * | 2012-09-18 | 2015-09-09 | 天津芯硕精密机械有限公司 | 一种直写曝光机调整曝光面功率均匀性的装置及方法 |
CN102902164B (zh) * | 2012-09-19 | 2015-04-22 | 天津芯硕精密机械有限公司 | 直写式光刻机在步进式曝光时的二维拼接处理方法 |
CN104698768B (zh) * | 2013-12-10 | 2017-02-01 | 上海微电子装备有限公司 | 光刻曝光系统 |
CN104298077B (zh) * | 2014-09-26 | 2016-07-06 | 中国科学院长春光学精密机械与物理研究所 | 滚动灰度光刻的dmd动作方法 |
CN110473280B (zh) * | 2018-05-09 | 2024-02-23 | 网易(杭州)网络有限公司 | 多光源画面渲染方法、装置、存储介质、处理器和终端 |
CN110597019B (zh) * | 2019-08-30 | 2022-04-19 | 合肥芯碁微电子装备股份有限公司 | 一种直写式光刻机曝光方法 |
CN112799285B (zh) * | 2019-11-14 | 2022-04-22 | 苏州苏大维格科技集团股份有限公司 | 三维微纳结构光刻系统及其方法 |
CN112799286B (zh) * | 2019-11-14 | 2022-04-22 | 苏州苏大维格科技集团股份有限公司 | 三维微纳结构光刻系统及其方法 |
CN112297669B (zh) * | 2020-10-06 | 2022-06-07 | 杨帆 | 一种接触印相工艺的数码中间底的制作方法 |
CN113589658A (zh) * | 2021-07-30 | 2021-11-02 | 深圳市鹏基光电有限公司 | 基于lcd技术的曝光工艺以及uv光刻机 |
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CN101320222A (zh) * | 2008-07-02 | 2008-12-10 | 中国科学院光电技术研究所 | 基于数字微镜阵列的步进式无掩模数字曝光装置 |
CN102147575A (zh) * | 2011-04-13 | 2011-08-10 | 合肥芯硕半导体有限公司 | 一种应用于直写式光刻机的灰阶曝光的方法 |
CN102323726A (zh) * | 2011-09-19 | 2012-01-18 | 合肥芯硕半导体有限公司 | 通过扫描实现高精度灰度曝光的方法 |
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US20040239901A1 (en) * | 2003-05-29 | 2004-12-02 | Asml Holding N.V. | System and method for producing gray scaling using multiple spatial light modulators in a maskless lithography system |
US7253881B2 (en) * | 2004-12-29 | 2007-08-07 | Asml Netherlands Bv | Methods and systems for lithographic gray scaling |
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CN101320222A (zh) * | 2008-07-02 | 2008-12-10 | 中国科学院光电技术研究所 | 基于数字微镜阵列的步进式无掩模数字曝光装置 |
CN102147575A (zh) * | 2011-04-13 | 2011-08-10 | 合肥芯硕半导体有限公司 | 一种应用于直写式光刻机的灰阶曝光的方法 |
CN102323726A (zh) * | 2011-09-19 | 2012-01-18 | 合肥芯硕半导体有限公司 | 通过扫描实现高精度灰度曝光的方法 |
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