CN109103315A - Luminescence component, micro- light emitting diode and its display device - Google Patents
Luminescence component, micro- light emitting diode and its display device Download PDFInfo
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- CN109103315A CN109103315A CN201810850250.2A CN201810850250A CN109103315A CN 109103315 A CN109103315 A CN 109103315A CN 201810850250 A CN201810850250 A CN 201810850250A CN 109103315 A CN109103315 A CN 109103315A
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- 238000004020 luminiscence type Methods 0.000 title claims abstract description 18
- 239000010410 layer Substances 0.000 claims abstract description 216
- 239000004065 semiconductor Substances 0.000 claims abstract description 93
- 239000011241 protective layer Substances 0.000 claims abstract description 52
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims abstract description 26
- 239000000463 material Substances 0.000 claims abstract description 20
- 238000000034 method Methods 0.000 claims description 23
- 239000000758 substrate Substances 0.000 claims description 23
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 7
- 239000004020 conductor Substances 0.000 claims description 6
- 229910052751 metal Inorganic materials 0.000 claims description 6
- 239000002184 metal Substances 0.000 claims description 6
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 4
- 238000009413 insulation Methods 0.000 claims description 4
- 239000000377 silicon dioxide Substances 0.000 claims description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 4
- 238000005253 cladding Methods 0.000 claims description 2
- 239000011247 coating layer Substances 0.000 claims description 2
- 238000009826 distribution Methods 0.000 claims description 2
- 238000004519 manufacturing process Methods 0.000 description 7
- 238000010586 diagram Methods 0.000 description 6
- 230000006378 damage Effects 0.000 description 4
- 239000002609 medium Substances 0.000 description 4
- 230000000694 effects Effects 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- 229910002601 GaN Inorganic materials 0.000 description 1
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical group [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 1
- 208000031294 Upper limb fractures Diseases 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 238000010923 batch production Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000011031 large-scale manufacturing process Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000007788 roughening Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
- H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/6835—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used as a support during build up manufacturing of active devices
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Led Device Packages (AREA)
- Led Devices (AREA)
Abstract
Luminescence component, micro- light emitting diode and its display device, it include: several micro- light emitting diodes, micro- light emitting diode includes layer sequence, for connecting the bridge arm of micro- light emitting diode and pedestal, at least in some or all of layer sequence side, region overlay has insulating protective layer, insulating protective layer includes vertical portion and horizontal component, horizontal component connects with bridge arm or as bridge arm, the wherein upper end of vertical portion and horizontal component intersection, intersection height is below or equal to the height of layer sequence side, the present invention protects the upper end of vertical portion and the intersection point of horizontal component by layer sequence, it avoids point of intersection from being damaged during semiconductor material removes and causes bridge arm that can not provide micro- light emitting diode enough supports.
Description
Technical field
The invention belongs to field of semiconductor manufacture, and in particular to a kind of luminescence component.
Background technique
Currently on the market, the micro- light-emitting diode chip for backlight unit of MicroLED is in such as biosensor, automotive lighting, display
Device, flexible apparatus, optic communication and vision real equipment etc. be widely applied in attract attention.The microsize of miniature LED chip and
Structure causes spacing to reduce and improves with external quantum efficiency, is the revolution of photoelectric device.However, MicroLED chip slim and
Exquisite framework is difficult to shift.
Although many companies, which provide, shifts solution, there are some problems in large-scale production.In batch production,
Transfer MicroLED chip may all reduce the yield of product every time.Lead to transfer indfficiency situation as one kind, referring to Fig. 1,
Insulating protective layer is easy to cause to destroy because being exposed under etching composition with micro- light emitting diode side wall contact position, influences to make
Bridge arm structure on insulating protective layer and the quantity that will increase the bridge arm abnormal damage of MicroLED chip, the bridge arm can not
There is provided micro- light-emitting diode chip for backlight unit enough holding powers, to after removing sacrificial layer, by micro- light-emitting diode chip for backlight unit and pedestal
It is fixed together.
Summary of the invention
The present invention proposes a kind of feasible solution aiming at the problem of background technique, and the present invention provides luminous group
Part, comprising: several micro- light emitting diodes, micro- light emitting diode include layer sequence, and layer sequence is at least by
One type semiconductor layer, Second Type semiconductor layer and between first kind semiconductor layer and Second Type semiconductor layer
Active illuminating layer composition, the first electric contacting layer being electrically connected with first kind semiconductor layer are electrically connected with Second Type semiconductor layer
The second electric contacting layer connect, wherein several are more than or equal to 1,
Pedestal, the bridge arm for connecting micro- light emitting diode and pedestal for supporting micro- light emitting diode,
At least in some or all of layer sequence side, region overlay has insulating protective layer,
Insulating protective layer includes vertical portion and horizontal component, and the vertical portion of insulating protective layer is attached to layer sequence side
Portion, horizontal component connect with bridge arm or as bridge arms, the upper end of vertical portion and horizontal component intersection, intersection height be lower than or
Person is equal to the height of layer sequence side.
, according to the invention it is preferred to, the distance at the top of intersection point to layer sequence side is equal to 0 μm, or is greater than 0 μm
To less than it is equal to 1 μm, perhaps it is greater than 1 μm to less than equal to 5 μm or greater than 5 μm to less than equal to 10 μm.
, according to the invention it is preferred to, when horizontal component connects with bridge arm, bridge arm is dielectric medium, metal or semiconductor material
Material.
, according to the invention it is preferred to, the relatively micro- light emitting diode of horizontal component is distributed in arm or platform-like.
, according to the invention it is preferred to, the angle of horizontal component and horizontal plane be more than or equal to 0 ° to less than be equal to 15 °, or
Person is greater than 15 ° to less than equal to 45 °；The angle of vertical portion and vertical plane is more than or equal to 0 ° to less than to be equal to 15 °, Huo Zhe great
In 15 ° to less than equal to 45 °.
In addition, the present invention also provides another luminescence components, comprising: several micro- light emitting diodes, micro- light-emitting diodes
Pipe includes layer sequence, and layer sequence at least by first kind semiconductor layer, Second Type semiconductor layer and is located at
Active illuminating layer composition between first kind semiconductor layer and Second Type semiconductor layer, is electrically connected with first kind semiconductor layer
The first electric contacting layer connect, the second electric contacting layer being electrically connected with Second Type semiconductor layer, wherein several are more than or equal to 1
It is a,
Pedestal, the bridge arm for connecting micro- light emitting diode and pedestal for supporting micro- light emitting diode,
At least in some or all of layer sequence side, region overlay has insulating protective layer, and insulating protective layer, which has, to be accepted
The carrier of bridge arm,
Carrier is less than or equal to layer sequence side height.
The present invention also provides the micro- light emitting diodes being transferred out from above-mentioned luminescence component, including semiconductor layer sequence
Column, layer sequence at least by first kind semiconductor layer, Second Type semiconductor layer and are located at first kind semiconductor layer
Active illuminating layer composition between Second Type semiconductor layer, the first electrical contact being electrically connected with first kind semiconductor layer
Layer, the second electric contacting layer being electrically connected with Second Type semiconductor layer, some or all of layer sequence side region is covered
Insulating protective layer is stamped,
Insulating protective layer includes vertical portion and horizontal component, and the vertical portion of insulating protective layer is attached to layer sequence side
Portion, the upper end of vertical portion and horizontal component intersection, intersection height are below or equal to the height of layer sequence side.
, according to the invention it is preferred to, the distance at the top of intersection point to layer sequence side is equal to 0 μm, or is greater than 0 μm
To less than it is equal to 1 μm, perhaps it is greater than 1 μm to less than equal to 5 μm or greater than 5 μm to less than equal to 10 μm.
, according to the invention it is preferred to, insulation protection layer material includes silica, silicon nitride.
, according to the invention it is preferred to, the angle of horizontal component and horizontal plane be more than or equal to 0 ° to less than be equal to 15 °, or
Person is greater than 15 ° to less than equal to 45 °；The angle of vertical portion and vertical plane is more than or equal to 0 ° to less than to be equal to 15 °, Huo Zhe great
In 15 ° to less than equal to 45 °.
, according to the invention it is preferred to, there is clad, clad is some or all of to be covered on micro- hair above horizontal component
At the top of optical diode.
, according to the invention it is preferred to, coating layer material is dielectric medium, metal or semiconductor material.
, according to the invention it is preferred to, the range of the length of micro- light emitting diode, width or height is from being more than or equal to 2 μ
M to less than 5 μm, from be more than or equal to 5 μm to less than 10 μm, from be more than or equal to 10 μm to less than 20 μm, from be more than or equal to 20 μm to
Less than 50 μm or from being more than or equal to 50 μm to less than or equal to 100 μm.
The present invention also provides a kind of transfer methods of micro- light emitting diode, imprint micro- light emitting diode to envelope for shifting
It fills on substrate, including,
Step 1 makes layer sequence in growth substrates, and layer sequence is at least by first kind semiconductor layer,
Two type semiconductor layers and the active illuminating layer composition between first kind semiconductor layer and Second Type semiconductor layer, half
Conductor sequence of layer is distributed in array-like；
Step 2 makes insulating protective layer in the side of micro- light emitting diode, in the side insulating protective layer packet of micro- light emitting diode
Vertical portion and horizontal component are included, the vertical portion of insulating protective layer is attached to layer sequence side, the upper end of vertical portion
Intersect with horizontal component；
Step 3 produces the first electric contacting layer being electrically connected with first kind semiconductor layer in layer sequence, with the second class
Second electric contacting layer of type semiconductor layer electrical connection；
Step 4 covers upper sacrificial layer in micro- LED surface, is fabricated to first stage light-emitting component；
Step 5 is provided with the pedestal for being correspondingly arranged groove with micro- light emitting diode, by the sacrificial layer of first stage light-emitting component
Side is bonded on the reeded pedestal of tool；
Step 6, removing growth substrates, remove part semiconductor sequence of layer；
Micro- light emitting diode is separated from pedestal using transfer coining and is transferred on package substrate by step 7；
In step 6, the layer sequence side after removal is greater than the intersection point of vertical portion and horizontal component.
The beneficial effect comprise that
Micro- light emitting diode in the production process, often will be by removing technique, and purpose includes that bridge arm is thinned according to actual needs
The upper surface roughening of thickness, micro- light emitting diode perhaps improves upper surface flatness and loses for example, by wet etching or dry method
The technological means such as carve to improve transfer yield or light extraction efficiency, in removing technique, the horizontal component of insulating protective layer and vertical
Partial intersection point is easy to be damaged because technique is removed, and leads to not provide enough branch for micro- light emitting diode and pedestal
Support force, the vertical portion of insulating protective layer are attached to layer sequence side, horizontal component connect with bridge arm or directly as
Bridge arm, the upper end of vertical portion and horizontal component intersection, intersection height are below or equal to the height of layer sequence side,
To protect the isolation protective material of vertical portion and horizontal component intersection；
Other features and advantages of the present invention will be illustrated in the following description, also, partly becomes from specification aobvious
And it is clear to, or understand through the implementation of the invention.The objectives and other advantages of the invention can be by specification, claim
Specifically noted structure is achieved and obtained in book and attached drawing.
Detailed description of the invention
Attached drawing is used to provide further understanding of the present invention, and constitutes part of specification, with reality of the invention
It applies example to be used to explain the present invention together, not be construed as limiting the invention.In addition, attached drawing data be description summary, be not by
Ratio is drawn.
Fig. 1 is the structural schematic diagram of background technique；
Fig. 2 to Fig. 7 is the structural schematic diagram of embodiment 1；
Fig. 8 to Figure 13 is the structural schematic diagram of embodiment 2；
Figure 14 is the structural schematic diagram of embodiment 3；
Figure 15 is the structural schematic diagram of micro- light emitting diode；
Figure 16 is the photo of one of micro- light emitting diode construction of the present invention；
Figure 17 is the structural schematic diagram of display device of the invention.
Specific embodiment
Hereinafter, embodiments of the present invention will be described in detail with reference to the accompanying drawings and examples, how to apply to the present invention whereby
Technological means solves technical problem, and the realization process for reaching technical effect can fully understand and implement.It needs to illustrate
As long as not constituting conflict, each feature in each embodiment and each embodiment in the present invention can be combined with each other,
It is within the scope of the present invention to be formed by technical solution.
It should be appreciated that term used in the present invention is limited merely for the purpose of description specific embodiment without being intended to
The system present invention.It further understands, when term "comprising", " including " is used in the present invention, for showing the feature, whole of statement
Body, step, element, and/or presence, and be not excluded for other one or more features, entirety, step, element, and/or they
Combined presence or increase.
Unless defined otherwise, all terms (including technical terms and scientific terms) used in the present invention have and this
The identical meaning of the meaning that the those of ordinary skill of field that the present invention belongs to is generally understood.It is to be further understood that the present invention is made
Term should be understood to have and meaning of these terms in the context and related fields of this specification is consistent contains
Justice, and should not be understood with idealization or meaning too formal, in addition to being clearly so defined in the present invention.
One embodiment of the invention provides a kind of structure and preparation method thereof of luminescence component, luminescence component packet
Include: several micro- light emitting diodes, micro- light emitting diode generally refer to micron-sized light emitting diode, since its is micron-sized
Size, therefore made a big difference in manufacture craft with conventional light emitting diodes, micro- light emitting diode master in the present invention
Will be having a size of, the range of length, width or height be from be more than or equal to 2 μm to less than 5 μm, from being more than or equal to 5 μm to being less than
10 μm, from be more than or equal to 10 μm to less than 20 μm, from being more than or equal to 20 μm to less than 50 μm or from being more than or equal to 50 μm to being less than
Equal to 100 μm.
Micro- light emitting diode 100 includes layer sequence 110, and layer sequence 110 is at least partly led by the first kind
Body layer, Second Type semiconductor layer and the active illuminating layer between first kind semiconductor layer and Second Type semiconductor layer
Composition, the first electric contacting layer 121 being electrically connected with first kind semiconductor layer, second be electrically connected with Second Type semiconductor layer
Electric contacting layer 122, wherein several are more than or equal to 1.
Pedestal 200, the bridge arm for connecting micro- light emitting diode 100 and pedestal 200 for supporting micro- light emitting diode 100
300。
In order to improve the reliability of micro- light emitting diode, at least in some or all of layer sequence side 111 area
Domain is covered with insulating protective layer.
Insulating protective layer includes vertical portion 410 and horizontal component 420, and the vertical portion 410 of insulating protective layer is attached to half
Conductor sequence of layer side 111, horizontal component 420 connect with bridge arm 300 or directly as bridge arms 300, vertical portion 410 it is upper
End and horizontal component 420 intersect, and 401 height of intersection point is below or equal to the height of layer sequence side 111.Due to by half
The insulating protective layer of the influence of 110 shape of conductor sequence of layer, side may have multiple vertical portions and horizontal component, this implementation
Example generally refers to the intersection point 401 of vertical portion and horizontal component near proximal portion upper end.
The production method of the luminescence component of the present embodiment includes the following steps:
Referring to Fig. 2, a substrate 500 is provided, the layer sequence 110 of micro- light emitting diode is made on substrate 500；
Referring to Fig. 3, technique is etched to layer sequence 110, produces the layer sequence 110 of array-like distribution；
Referring to Fig. 4, in layer sequence 110 and insulating protective layer is covered on exposed substrate 500, and in semiconductor layer sequence
Column 110 produce the first electric contacting layer 121 being electrically connected with first kind semiconductor layer, are electrically connected with Second Type semiconductor layer
The second electric contacting layer 122, the insulating protective layer in the present embodiment is at least by being located at 110 lower section of layer sequence and semiconductor
The insulating materials of sequence of layer side 111 forms, due to manufacture craft, the insulating protective layer of side be divided into one or
The vertical portion 410 of multiple vertical portions 410 and horizontal component 420, insulating protective layer is attached to layer sequence side 111,
Between multiple layer sequences, the upper end of vertical portion 410 and horizontal component 420 intersect horizontal component 420；
Referring to Fig. 5, sacrificial layer 600 is covered in micro- light-emitting diodes tube outer surface；
Referring to Fig. 6, will be distributed on the wafer bonding to the pedestal with groove 210 of good micro- light emitting diode, wherein sacrificial layer 600
It is connect with groove 210；
Referring to Fig. 7, substrate 500 and sacrificial layer 600 are removed.
Removal technique is carried out to the layer sequence 110 of the luminescence component after removal substrate 500, removes the technology of technique
Means include, grinding, the combination of wet etching, dry etching or the above technological means, and the purpose for removing technique includes but unlimited
Increase light out in being thinned, being planarized or be roughened to the top of layer sequence 110, the semiconductor layer sequence after removal
The intersection point 401 that side 111 need to be greater than vertical portion 410 and horizontal component 420 is arranged, it is right during removal to prevent
The intersection point 401 damages.
Referring again to Fig. 7, it is based on above-mentioned technique, provides a kind of luminescence component structure, comprising: the arrangement of several array-likes
Micro- light emitting diode, and micro- light emitting diode includes layer sequence 110, layer sequence 110 is at least by the first kind
Semiconductor layer, Second Type semiconductor layer and the active hair between first kind semiconductor layer and Second Type semiconductor layer
Photosphere composition, the first electric contacting layer 121 being electrically connected with first kind semiconductor layer are electrically connected with Second Type semiconductor layer
Second electric contacting layer 122, wherein several are more than or equal to 1, and the layer sequence 110 of the present embodiment is gallium nitride base,
But it is also applicable in other semiconductor materials for being suitble to micro- light emitting diode.
It supports the pedestal 200 of micro- light emitting diode 100, pedestal 200 that can be flat, is also possible to have and semiconductor
The corresponding groove 210 of sequence of layer 110；For connecting the bridge arm of micro- light emitting diode 100 and pedestal 200, according to different production
Technique, bridge arm can choose as dielectric medium, metal or semiconductor material.
At least in some or all of layer sequence side 111, region overlay has insulating protective layer, insulating protective layer
Including vertical portion 410 and horizontal component 420, the vertical portion 410 of insulating protective layer is attached to layer sequence side 111,
Horizontal component 420 connects with bridge arm or as bridge arm, horizontal component 420 is directly as bridge arm in the present embodiment, vertically
The upper end of part 410 and horizontal component 420 intersect, and 401 height of intersection point is below or equal to the height of layer sequence side 111
Degree, be actually equal to it is more rambunctious, therefore preferred 401 height of intersection point of the present embodiment be lower than layer sequence side wall 111
Height.Specifically, the distance at intersection point 401 to 111 top of layer sequence side is equal to 0 μm, or is greater than 0 μm extremely small
In being equal to 1 μm, perhaps it is greater than 1 μm to less than equal to 5 μm or greater than 5 μm to less than equal to 10 μm.The distance that the present invention selects
To reduce bridge arm span, to improve bridge arm stability, reducing the risk of transfer failure more than or equal to 0 μm to less than equal to 1 μm.
In order to more clearly describe vertical portion 410 and horizontal component 420, in the present embodiment, horizontal component 420 and water
The angle of plane be more than or equal to 0 ° to less than be equal to 15 °, or be greater than 15 ° to less than be equal to 45 °；Vertical portion 410 and perpendicular
The angle faced directly be more than or equal to 0 ° to less than be equal to 15 °, or be greater than 15 ° to less than be equal to 45 °.Certain angle can be
It improves light extraction efficiency or heat dissipation etc. and help is provided.The relatively micro- light emitting diode of horizontal component 420 is in arm or similar
The platform-like of micro- light emitting diode skirt is distributed.
In a second embodiment of the present invention, it with embodiment 1 there are technologic difference, referring to Fig. 8, is partly led in production
When body sequence of layer 110, to the removal technique between layer sequence 110, does not remove to and expose substrate 500, reserve part
Divide semiconductor material.The purpose of the technological means is that the insulating protective layer after avoiding as far as possible is fabricated on substrate 500, because
Be not readily separated for insulating protective layer and substrate 500, and insulating protective layer part respectively with substrate 500 and layer sequence 110
Connection is easy to cause the damage of layer sequence 110 in removing, therefore the present embodiment remains part semiconductor material,
The insulating materials such as semiconductor material versus-silica, silicon nitride are easy to remove from substrate 500, without directly exposing substrate
500, while also taking into account and solving the problems, such as background technique, layer sequence 110 is arranged to T-type, insulating protective layer is set
It sets in layer sequence 110, what the reliability and micro- light emitting diode for effectively improving subsequent technique bridge arm shifted
Success rate.
Referring to Fig. 9, the insulating protective layer of the present embodiment is covered on semiconductor material, does not directly overlay semiconductor layer
On substrate 500 between sequence 110.
Referring to Figure 10 to Figure 12, similar embodiment 1 is bonded on pedestal 200 by sacrificial layer 600, to semiconductor layer sequence
Column 110 carry out part and remove technique, the thickness of bridge arm are reduced, more preferably to carry out transfer coining.Referring to Figure 13, Figure 13 and Figure 12
Difference is, controls the ratio that layer sequence 110 removes in the present embodiment, and generates different structures, and Figure 13 has
The intersection point 401 that the upper end of vertical portion 410 in insulating protective layer and horizontal component 420 are intersected is arranged relatively good controllability
In the inside of layer sequence side 111, so that insulating protective layer has better reliability after removing technique.
Referring to Figure 14, third embodiment of the invention is provided, on the basis of embodiment 2, then makes one layer of bridge arm
Structure, this layer of bridge arm structure can be the clad 700 of whole face setting, can be arranged with strip or combination, to
The reliability of bridge arm is improved, bridge arm structure is located on semiconductor sequence and insulating protective layer horizontal component 420, plays linker
The effect of frame 200 and micro- light emitting diode 100.
In this embodiment, at least in some or all of layer sequence side 111, region overlay has insulation protection
Layer, the horizontal component 420 of insulating protective layer are less than or equal to semiconductor as the carrier for making bridge arm again, the carrier is accepted
111 height of sequence of layer side, the carrier of insulating protective layer are arranged in the indent position of layer sequence 110, then reduce
The destruction to carrier is removed, carrier preferably can provide growth support for bridge arm, and the latter made bridge arm of guarantee can have excellent
The stable structure of matter.
Shifting process is carried out to micro- light emitting diode of the luminescence component of embodiment 1 to embodiment 3, it will using transfer coining
Micro- light emitting diode is separated from pedestal 200 and is transferred on package substrate 800, referring to Figure 15 and Figure 16, micro- light emitting diode
100 include layer sequence 110, and layer sequence 110 is at least by first kind semiconductor layer, Second Type semiconductor layer
And the active illuminating layer composition between first kind semiconductor layer and Second Type semiconductor layer, with first kind semiconductor
First electric contacting layer 121 of layer electrical connection, the second electric contacting layer 122 being electrically connected with Second Type semiconductor layer, semiconductor layer
Some or all of sequence side 111 region overlay has insulating protective layer,
Insulating protective layer includes vertical portion 410 and horizontal component 420, and the vertical portion 410 of insulating protective layer is attached to semiconductor
Sequence of layer side 111, the upper end of vertical portion 410 and horizontal component 420 intersect, and 401 height of intersection point is below or equal to and partly leads
The height of body sequence of layer side 111.Insulation protection layer material includes silica, silicon nitride.Horizontal component 420 and horizontal plane
Angle be more than or equal to 0 ° to less than be equal to 15 °, or be greater than 15 ° to less than be equal to 45 °；Vertical portion 410 and vertical plane
Angle be more than or equal to 0 ° to less than be equal to 15 °, or be greater than 15 ° to less than be equal to 45 °.
The distance at intersection point 401 to 111 top of layer sequence side is equal to 0 μm, or is greater than 0 μm to less than is equal to 1 μ
M is perhaps greater than 1 μm to less than equal to 5 μm or greater than 5 μm to less than equal to 10 μm.
There is clad 700, clad 700 can be integrally designed with bridge arm before transfer coining, turn above horizontal component
Bridge arm fracture leaves the clad 700 for being covered on micro- 100 top of light emitting diode after shifting, i.e., makes again in third embodiment
Bridge arm structure have passed through imprint process, clad 700 is some or all of to be covered on micro- 100 top of light emitting diode, cladding
700 material of layer are dielectric medium, metal or semiconductor material.The length of micro- light emitting diode 100 in the present embodiment, width or
The range of person's height be from be more than or equal to 2 μm to less than 5 μm, from be more than or equal to 5 μm to less than 10 μm, from be more than or equal to 10 μm
To less than 20 μm, from be more than or equal to 20 μm to less than 50 μm or from be more than or equal to 50 μm to be less than or equal to 100 μm.
Referring to Figure 17, by light emitting diode 100 micro- in several above-described embodiments, only transfer coining is separated from pedestal 200
And it is transferred on package substrate 800, and the package substrate 800 with control circuit is bonded together, and can be made with high definition
The display device of pixel.
The above is only a preferred embodiment of the present invention, it is noted that for those skilled in the art,
Without departing from the principles of the invention, several improvements and modifications can also be made, these improvements and modifications also should be regarded as this hair
Bright protection scope.
Claims (15)
1. luminescence component, comprising: several micro- light emitting diodes, micro- light emitting diode include layer sequence, semiconductor layer
Sequence at least by first kind semiconductor layer, Second Type semiconductor layer and is located at first kind semiconductor layer and Second Type half
Active illuminating layer composition between conductor layer, the first electric contacting layer being electrically connected with first kind semiconductor layer, with Second Type
Second electric contacting layer of semiconductor layer electrical connection, wherein several are more than or equal to 1,
Pedestal, the bridge arm for connecting micro- light emitting diode and pedestal for supporting micro- light emitting diode,
At least in some or all of layer sequence side, region overlay has insulating protective layer,
It is characterized in that, insulating protective layer includes vertical portion and horizontal component, the vertical portion of insulating protective layer, which is attached to, partly to be led
Body sequence of layer side, horizontal component connect with bridge arm or as bridge arm, the upper end of vertical portion and horizontal component intersection, intersection points
Height is below or equal to the height of layer sequence side.
2. luminescence component according to claim 1, which is characterized in that the distance at the top of intersection point to layer sequence side
Equal to 0 μm, perhaps it is greater than 0 μm to less than is equal to 1 μm and be perhaps greater than 1 μm to less than be equal to 5 μm or greater than 5 μm to less than wait
In 10 μm.
3. luminescence component according to claim 1, which is characterized in that when horizontal component connects with bridge arm, bridge arm is dielectric
Matter, metal or semiconductor material.
4. luminescence component according to claim 1, which is characterized in that the relatively micro- light emitting diode of horizontal component in arm or
The distribution of person's platform-like.
5. luminescence component according to claim 1, which is characterized in that the angle of horizontal component and horizontal plane be more than or equal to
0 ° to less than be equal to 15 °, or be greater than 15 ° to less than be equal to 45 °；The angle of vertical portion and vertical plane is extremely more than or equal to 0 °
Less than or equal to 15 °, or greater than 15 ° to less than equal to 45 °.
6. luminescence component, comprising: several micro- light emitting diodes, micro- light emitting diode include layer sequence, semiconductor layer
Sequence at least by first kind semiconductor layer, Second Type semiconductor layer and is located at first kind semiconductor layer and Second Type half
Active illuminating layer composition between conductor layer, the first electric contacting layer being electrically connected with first kind semiconductor layer, with Second Type
Second electric contacting layer of semiconductor layer electrical connection, wherein several are more than or equal to 1,
Pedestal, the bridge arm for connecting micro- light emitting diode and pedestal for supporting micro- light emitting diode,
At least in some or all of layer sequence side, region overlay has insulating protective layer, and insulating protective layer, which has, to be accepted
The carrier of bridge arm,
It is characterized in that, carrier is less than or equal to layer sequence side height.
7. micro- light emitting diode, including layer sequence, layer sequence is at least by first kind semiconductor layer, the second class
Type semiconductor layer and the active illuminating layer composition between first kind semiconductor layer and Second Type semiconductor layer, with first
First electric contacting layer of type semiconductor layer electrical connection, the second electric contacting layer being electrically connected with Second Type semiconductor layer are partly led
Some or all of body sequence of layer side region overlay has insulating protective layer,
It is characterized in that, insulating protective layer includes vertical portion and horizontal component, the vertical portion of insulating protective layer, which is attached to, partly to be led
Body sequence of layer side, the upper end of vertical portion and horizontal component intersection, intersection height are below or equal to layer sequence side
The height in portion.
8. micro- light emitting diode according to claim 7, which is characterized in that at the top of intersection point to layer sequence side
Distance is equal to 0 μm, and 1 μm is perhaps greater than perhaps greater than 0 μm to less than equal to 1 μm to less than is equal to 5 μm or is greater than 5 μm extremely small
In equal to 10 μm.
9. micro- light emitting diode according to claim 7, which is characterized in that insulation protection layer material include silica,
Silicon nitride.
10. micro- light emitting diode according to claim 7, which is characterized in that the angle of horizontal component and horizontal plane is big
In be equal to 0 ° to less than be equal to 15 °, or be greater than 15 ° to less than be equal to 45 °；The angle of vertical portion and vertical plane be greater than etc.
In 0 ° to less than it is equal to 15 °, or greater than 15 ° to less than equal to 45 °.
11. micro- light emitting diode according to claim 7, which is characterized in that have clad, cladding above horizontal component
Layer is some or all of to be covered on micro- LED top.
12. micro- light emitting diode according to claim 11, which is characterized in that coating layer material be dielectric medium, metal or
Person's semiconductor material.
13. micro- light emitting diode according to claim 7, which is characterized in that the length of micro- light emitting diode, width or
The range of height be from be more than or equal to 2 μm to less than 5 μm, from be more than or equal to 5 μm to less than 10 μm, from be more than or equal to 10 μm to
Less than 20 μm, from being more than or equal to 20 μm to less than 50 μm or from being more than or equal to 50 μm to less than or equal to 100 μm.
14. a kind of display device, which is characterized in that including any one of claim 7 to claim 13 claim institute
The micro- light emitting diode stated.
15. a kind of transfer method of micro- light emitting diode, for the micro- light emitting diode of transfer coining to package substrate, including,
Step 1 makes layer sequence in growth substrates, and layer sequence is at least by first kind semiconductor layer,
Two type semiconductor layers and the active illuminating layer composition between first kind semiconductor layer and Second Type semiconductor layer, half
Conductor sequence of layer is distributed in array-like；
Step 2 makes insulating protective layer in the side of micro- light emitting diode, in the side insulating protective layer packet of micro- light emitting diode
Vertical portion and horizontal component are included, the vertical portion of insulating protective layer is attached to layer sequence side, the upper end of vertical portion
Intersect with horizontal component；
Step 3 produces the first electric contacting layer being electrically connected with first kind semiconductor layer in layer sequence, with the second class
Second electric contacting layer of type semiconductor layer electrical connection；
Step 4 covers upper sacrificial layer in micro- LED surface, is fabricated to first stage light-emitting component；
Step 5 is provided with the pedestal for being correspondingly arranged groove with micro- light emitting diode, by the sacrificial layer of first stage light-emitting component
Side is bonded on the reeded pedestal of tool；
Step 6, removing growth substrates, remove part semiconductor sequence of layer；
Micro- light emitting diode is separated from pedestal using transfer coining and is transferred on package substrate by step 7；
It is characterized in that, the layer sequence side after removing in step 6 is greater than vertical portion and horizontal component
Intersection point.
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| CN202010744583.4A CN111933771B (en) | 2018-07-28 | 2018-07-28 | Micro light emitting diode and display device thereof |
| CN201810850250.2A CN109103315B (en) | 2018-07-28 | 2018-07-28 | Light emitting assembly, micro light emitting diode and display device thereof |
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| CN113328020A (en) * | 2021-05-10 | 2021-08-31 | 厦门三安光电有限公司 | Micro light emitting diode, micro light emitting element and display |
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Also Published As
| Publication number | Publication date |
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| CN111933771A (en) | 2020-11-13 |
| CN109103315B (en) | 2020-09-11 |
| CN111933771B (en) | 2023-02-17 |
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