CN102593313A - Package carrier and method for manufacturing the same - Google Patents
Package carrier and method for manufacturing the same Download PDFInfo
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- CN102593313A CN102593313A CN2011100591012A CN201110059101A CN102593313A CN 102593313 A CN102593313 A CN 102593313A CN 2011100591012 A CN2011100591012 A CN 2011100591012A CN 201110059101 A CN201110059101 A CN 201110059101A CN 102593313 A CN102593313 A CN 102593313A
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- Prior art keywords
- carrier plate
- substrate
- encapsulating carrier
- those
- perforations
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 43
- 238000000034 method Methods 0.000 title claims description 36
- 239000000758 substrate Substances 0.000 claims abstract description 64
- 239000011248 coating agent Substances 0.000 claims description 42
- 238000000576 coating method Methods 0.000 claims description 42
- 229910003460 diamond Inorganic materials 0.000 claims description 42
- 239000010432 diamond Substances 0.000 claims description 42
- 230000004888 barrier function Effects 0.000 claims description 23
- 229910052751 metal Inorganic materials 0.000 claims description 21
- 239000002184 metal Substances 0.000 claims description 21
- 238000005229 chemical vapour deposition Methods 0.000 claims description 8
- 238000005240 physical vapour deposition Methods 0.000 claims description 8
- 238000005553 drilling Methods 0.000 claims description 4
- 238000005530 etching Methods 0.000 claims description 4
- 238000002360 preparation method Methods 0.000 claims description 4
- 238000000059 patterning Methods 0.000 claims 2
- 238000004806 packaging method and process Methods 0.000 abstract description 5
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 abstract 1
- 229910052799 carbon Inorganic materials 0.000 abstract 1
- 238000012797 qualification Methods 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 5
- 238000009413 insulation Methods 0.000 description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 3
- 229910052802 copper Inorganic materials 0.000 description 3
- 239000010949 copper Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000012546 transfer Methods 0.000 description 3
- 229910000838 Al alloy Inorganic materials 0.000 description 2
- 229910000881 Cu alloy Inorganic materials 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000005855 radiation Effects 0.000 description 2
- 238000013459 approach Methods 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
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Abstract
The invention discloses a packaging carrier plate and a manufacturing method thereof. The substrate has an upper surface and a lower surface opposite to each other and a plurality of through holes. The through hole is connected with the upper surface and the lower surface. The diamond-like carbon layer covers the upper surface and the lower surface of the substrate and the side wall of the through hole. The pads are arranged on the upper surface and the lower surface of the substrate corresponding to the through holes. The conductive columns are respectively arranged in the through holes and electrically connected with the connecting pads.
Description
Technical field
The present invention relates to a kind of semiconductor structure and preparation method thereof, and particularly relate to a kind of encapsulating carrier plate and preparation method thereof.
Background technology
The purpose of Chip Packaging is to protect exposed chip, reduces the density of chip contact and provide chip good heat radiation.Traditional routing (wire bonding) technology adopts the carrier (carrier) of lead frame (leadframe) as chip usually.Along with the contactor density of chip improves gradually; Lead frame can't provide higher contactor density again; So the base plate for packaging (packagesubstrate) with high contactor density capable of using replaces it; And conduct electricity medium through plain conductor or projection (bump) etc., with Chip Packaging to base plate for packaging.
With package structure for LED commonly used at present, owing to light-emitting diode need encapsulate earlier before use, and light-emitting diode can produce a large amount of heat energy when emitting beam.If the heat energy that light-emitting diode produced can't loss and constantly is deposited in the package structure for LED, then the temperature of package structure for LED can rise constantly.Thus, light-emitting diode may be because of overheated and cause brightness decay and useful life to shorten, severe patient even cause nonvolatil damage.
In order to solve the above problems, more existing prior aries are suggested in succession.For instance; TaiWan, China patent announcement numbers 200945961 is on substrate, to form heat conductive insulating layer and ceramic layer; And substrate has through hole is arranged on the substrate upper and lower sides with electrical connection conductive pattern; Therefore the heat of getting rid of electronic component effectively and being produced, and then the efficient and the useful life of improving electronic component.In general owing to must be electrically insulated between the electric conducting material in substrate and the through hole, avoiding producing electrical problem, thus TaiWan, China patent announcement numbers 200945961 also must formation one insulating barriers on the sidewall of through hole.
Summary of the invention
The object of the present invention is to provide a kind of encapsulating carrier plate, it has the class diamond carbon-coating of good insulation properties and thermal conductivity.
The present invention provides a kind of manufacture method of encapsulating carrier plate, and it can reduce manufacturing process steps, reducing cost, and can improve the manufacture craft qualification rate.
The present invention proposes a kind of encapsulating carrier plate, and it comprises a substrate, one type of diamond carbon-coating, a plurality of connection pad and a plurality of conductive pole.Substrate has a upper surface respect to one another and a lower surface and a plurality of perforation.Perforation connects upper surface and lower surface.The sidewall of upper surface, lower surface and the perforation of class diamond carbon-coating covered substrate.The corresponding perforation of connection pad and being disposed on the surface, upper surface up and down of substrate.Conductive pole is disposed in the perforation respectively, and is electrically connected with connection pad.
In one embodiment of this invention, above-mentioned connection pad and conductive pole are one-body molded.
In one embodiment of this invention, the aperture of each above-mentioned perforation by the upper surface of substrate towards the lower surface convergent.
In one embodiment of this invention, the aperture of each above-mentioned perforation is by the upper surface of substrate and lower surface convergent inwardly.
In one embodiment of this invention, above-mentioned encapsulating carrier plate also comprises an insulating barrier, and conductive pole comprises a plurality of hollow conductive poles.Insulating barrier is disposed in the hollow conductive pole, and connection pad covers insulating barrier.
The present invention proposes a kind of manufacture method of encapsulating carrier plate, and wherein manufacture method comprises the steps.Provide one be formed with a plurality of perforations substrate.Substrate has a upper surface respect to one another and a lower surface, and perforation connects upper surface and lower surface.Form one type of diamond carbon-coating in the sidewall of upper surface, lower surface and the perforation of substrate.Form a metal level on class diamond carbon-coating.Patterned metal layer is to form on a plurality of upper surfaces that are positioned at substrate and the lower surface and connection pad and a plurality of conductive pole that is electrically connected with connection pad of corresponding perforation.
In one embodiment of this invention, the method for above-mentioned formation class diamond carbon-coating comprise chemical vapour deposition (CVD) (Chemical Vapor Deposition, CVD) or physical vapour deposition (PVD) (Physical VaporDeposition, PVD).
In one embodiment of this invention, the method for above-mentioned formation metal level comprises galvanoplastic.
In one embodiment of this invention, the aperture of each above-mentioned perforation by the upper surface of substrate towards the lower surface convergent.
In one embodiment of this invention, the aperture of each above-mentioned perforation is by the upper surface of substrate and lower surface convergent inwardly.
In one embodiment of this invention, the method for above-mentioned formation perforation comprises etching method or machine drilling method.
In one embodiment of this invention, above-mentioned metal level covers the class diamond carbon-coating on the sidewall of perforation and fills up perforation.
In one embodiment of this invention, on be set forth in before the patterned metal layer, more comprise: form an insulating barrier in perforation, wherein metal level covers the class diamond carbon-coating on the sidewall of perforation, and insulating barrier fills up perforation.
Based on above-mentioned, because encapsulating carrier plate of the present invention is the sidewall that employing type diamond carbon-coating comes upper surface, lower surface and the perforation of covered substrate, and a type diamond carbon-coating has good insulation performance property and thermal conductivity.Therefore, the connection pad of encapsulating carrier plate of the present invention can directly be electrically insulated through class diamond carbon-coating and substrate.Thus, except can reducing the step of making insulating barrier, also can reduce cost and also can improve the manufacture craft qualification rate.
For letting the above-mentioned feature and advantage of the present invention can be more obviously understandable, hereinafter is special lifts embodiment, and cooperates appended accompanying drawing to elaborate as follows.
Description of drawings
Fig. 1 is the generalized section of a kind of encapsulating carrier plate of one embodiment of the invention;
Fig. 2 A to Fig. 2 E is the generalized section of manufacture method of a kind of encapsulating carrier plate of one embodiment of the invention;
Fig. 3 is the generalized section of a kind of encapsulating carrier plate of another embodiment of the present invention;
Fig. 4 is the generalized section of a kind of encapsulating carrier plate of another embodiment of the present invention;
Fig. 5 is the generalized section of a kind of encapsulating carrier plate of an embodiment more of the present invention.
The main element symbol description
100a, 100b, 100c, 100d: encapsulating carrier plate
110: substrate
112: upper surface
114: lower surface
116a, 116b, 116c: perforation
120: type diamond carbon-coating
125: metal level
130: connection pad
140a, 140b, 140c, 140d: conductive pole
150: insulating barrier
Embodiment
Fig. 1 is the generalized section of a kind of encapsulating carrier plate of one embodiment of the invention.Please refer to Fig. 1, in the present embodiment, encapsulating carrier plate 100a comprises a substrate 110, one type of diamond carbon-coating 120, a plurality of connection pad 130 and a plurality of conductive pole 140a.Wherein, the encapsulating carrier plate 100a of present embodiment is suitable for carrying a light-emitting component (not illustrating), for example is a light-emitting diode chip for backlight unit.
In detail, substrate 110 has a upper surface 112 and a lower surface 114 and a plurality of perforation 116a respect to one another, and wherein these perforations 116a connects upper surface 112 and lower surface 114.In the present embodiment; Substrate 110 for example is the preferable copper base of heat conductivity, copper alloy substrate, aluminium base or aluminium alloy base plate; Wherein the thermal conductivity of copper is splendid, can conduct the heat energy that light-emitting component (not illustrating) is produced fast, to reduce the working temperature of light-emitting component.
The sidewall of upper surface 112, lower surface 114 and the perforation 116a of class diamond carbon-coating 120 covered substrates 110, wherein type diamond carbon-coating 120 can be considered the heat radiation approach of the light-emitting component (not illustrating) that is arranged on the encapsulating carrier plate 100a.These connection pads 130 corresponding these perforations 116a and being disposed on the surface, upper surface 112 up and down 114 of substrate 110.These conductive poles 140a is disposed at respectively in these perforations 116a, and is electrically connected with these connection pads 130.Particularly, in the present embodiment, these connection pads 130 for example are one-body molded with these conductive poles 140a.
Because the encapsulating carrier plate 100a of present embodiment is in the sidewall of upper surface 112, lower surface 114 and the perforation 116a of substrate 110 type of configuration diamond carbon-coating 120 all, and a type diamond carbon-coating 120 has good insulation properties and thermal conductivity.Therefore, these connection pads 130 can directly be electrically insulated through class diamond carbon-coating 120 and substrate 110.In addition, when light-emitting component (not illustrating) sends light source and when producing a large amount of heat energy, also can be through the good substrate 110 of type diamond carbon-coating 120 and heat conductivity effectively with thermal energy transfer to extraneous, can promote the service efficiency and the useful life of light-emitting component.
Below only introduce the structure of encapsulating carrier plate 100a of the present invention, do not introduce the manufacture method of encapsulating carrier plate 100a of the present invention.To this, below will be with the encapsulating carrier plate 100a among Fig. 1 as illustrating, and cooperate Fig. 2 A to Fig. 2 E that the manufacture method of encapsulating carrier plate 100a of the present invention is carried out detailed explanation.
Fig. 2 A to Fig. 2 E is the generalized section of manufacture method of a kind of encapsulating carrier plate of one embodiment of the invention.Please according to the manufacture method of the encapsulating carrier plate 100a of present embodiment earlier with reference to figure 2A, at first, a substrate 110 is provided.In the present embodiment, substrate 110 has a upper surface 112 and a lower surface 114 respect to one another, and substrate 110 for example is the preferable copper base of heat conductivity, copper alloy substrate, aluminium base or aluminium alloy base plate.
Then, please refer to Fig. 2 B, form a plurality of perforation 116a that run through substrate 110, wherein these perforations 116a connects the upper surface 112 and the lower surface 114 of substrate 110.In the present embodiment, the method that wherein forms these perforations 116a can be etching method, machine drilling method or other suitable modes.At this, these perforations 116a adopts etching method to form.
Then, please refer to Fig. 2 C, form the sidewall of one type of diamond carbon-coating 120, wherein form type method of diamond carbon-coating 120 and comprise chemical vapor deposition (CVD) or physical vapor deposition (PVD) in upper surface 112, lower surface 114 and the perforation 116a of substrate 110.
Then, please refer to Fig. 2 D, form a metal level 125 on class diamond carbon-coating 120, wherein metal level 125 covers the class diamond carbon-coating 120 on the sidewall of the upper surface 112, lower surface 114 and these perforations 116a that are positioned at substrate 110, and fills up these perforations 116a.In the present embodiment, the method for formation metal level 125 for example is galvanoplastic.
At last, please refer to Fig. 2 E, patterned metal layer 125 is to form on a plurality of upper surfaces 112 that are positioned at substrate 110 and the lower surface 114 and connection pad 130 and a plurality of conductive pole 140a that is electrically connected with these connection pads 130 of corresponding these perforations 116a.So far, encapsulating carrier plate 100a roughly accomplishes.
Because the class diamond carbon-coating 120 of present embodiment is on the sidewall of the upper surface 112, lower surface 114 and these perforations 116a that are formed at substrate 110, and a type diamond carbon-coating 120 has good insulation properties and thermal conductivity.Therefore; Be compared to existing TaiWan, China patent 200945961 and need to form in addition insulating barrier; The manufacture method of the encapsulating carrier plate 100a of present embodiment; Can reduce the manufacturing process steps of insulating barrier, meaning promptly need not extraly form insulating barrier in perforation again, can directly be electrically insulated through class diamond carbon-coating 120 and substrate 110.Thus, the manufacture method of the encapsulating carrier plate 100a of present embodiment can reduce cost of manufacture effectively and can improve the manufacture craft qualification rate.
Moreover; In follow-up manufacture craft; When each light-emitting component (not illustrating) engages manufacture craft when being electrically connected with the connection pad 130 of encapsulating carrier plate 100a via routing, can be through the good substrate 110 of class diamond carbon-coating 120 and thermal conductivity effectively with thermal energy transfer that light-emitting component the produced external world extremely.So, the heat that the encapsulating carrier plate 100a of present embodiment also can effectively get rid of light-emitting component and produced, and then the service efficiency and the useful life of improving light-emitting component.
In this mandatory declaration is that following embodiment continues to use the element numbers and the partial content of previous embodiment, wherein adopts identical label to represent identical or approximate element, and has omitted the explanation of constructed content.Explanation about clipped can be with reference to previous embodiment, and following embodiment no longer repeats to give unnecessary details.
Fig. 3 is the generalized section of a kind of encapsulating carrier plate of another embodiment of the present invention.Please be simultaneously with reference to figure 1 and Fig. 3, the encapsulating carrier plate 100b of present embodiment is similar with the encapsulating carrier plate 100a of Fig. 1, and both difference is: the aperture of each perforation 116b of the encapsulating carrier plate 100b of Fig. 3 is by the upper surface 112 of substrate 110 and lower surface 114 convergent inwardly.Because the sidewall of these perforations 116b of present embodiment is not to be parallel to each other, therefore when forming class diamond carbon-coating 120, can have preferable manufacture craft qualification rate in the sidewall of these perforations 116b.
In addition; On manufacture craft; The encapsulating structure 100b of present embodiment can adopt the production method roughly the same with the encapsulating structure 100a of previous embodiment, and when carrying out the manufacturing process steps of Fig. 2 B, promptly forms and run through in these perforations 116b step of substrate 110; Utilize the control etch-rate to form the aperture by the upper surface 112 of substrate 110 and lower surface 114 these perforations 116b of convergent inwardly; Then, carry out the manufacturing process steps of block diagram 2C to Fig. 2 E in regular turn, even if can roughly accomplish the making of encapsulating structure 100b.
Fig. 4 is the generalized section of a kind of encapsulating carrier plate of another embodiment of the present invention.Please be simultaneously with reference to figure 1 and Fig. 4, the encapsulating carrier plate 100c of present embodiment is similar with the encapsulating carrier plate 100a of Fig. 1, both difference is: the aperture of each perforation 116c of the encapsulating carrier plate 100c of Fig. 4 by the upper surface 112 of substrate 110 towards lower surface 114 convergents.Because the sidewall of these perforations 116c of present embodiment is not to be parallel to each other, but convergent from top to bottom, therefore when forming class diamond carbon-coating 120, can have preferable manufacture craft qualification rate in the sidewall of these perforations 116c.
In addition; On manufacture craft; The encapsulating structure 100c of present embodiment can adopt the production method roughly the same with the encapsulating structure 100a of previous embodiment, and when carrying out the manufacturing process steps of Fig. 2 B, promptly forms and run through in these perforations 116c step of substrate 110; Adopt the mode of machine drilling method to form the aperture by the upper surface 112 of substrate 110 these perforations 116c towards lower surface 114 convergents; Then, carry out the manufacturing process steps of block diagram 2C to Fig. 2 E in regular turn, even if can roughly accomplish the making of encapsulating structure 100c.
Fig. 5 is the generalized section of a kind of encapsulating carrier plate of an embodiment more of the present invention.Please be simultaneously with reference to figure 1 and Fig. 5; The encapsulating carrier plate 100d of present embodiment is similar with the encapsulating carrier plate 100a of Fig. 1; Both difference is: the encapsulating carrier plate 100d of Fig. 5 also comprises an insulating barrier 150; Wherein these conductive poles 140d for example is a plurality of hollow conductive poles, and insulating barrier 150 is disposed in these hollow conductive poles (being conductive pole 140d), and these connection pads 130 cover insulating barrier 150.
In addition; On manufacture craft, the encapsulating structure 100d of present embodiment can adopt the production method roughly the same with the encapsulating structure 100a of previous embodiment, and when carrying out the step of Fig. 2 D; Promptly formed metal level 125 in 120 last times of class diamond carbon-coating; Form metal level 125 earlier in these perforations 116a, then, form an insulating barrier 150 again in these perforations 116a; The metal level 125 that wherein is formed in these perforations 116a is between the class diamond carbon-coating 120 on the sidewall of insulating barrier 150 and these perforations 116a, and insulating barrier 150 fills up these perforations 116a.Then, electroplating manufacture craft again becomes to form metal level 125 on the class diamond carbon-coating 120 on upper surface that is positioned at substrate 110 112 and the lower surface 114.At last, carry out the manufacturing process steps of block diagram 2E in regular turn, even if can roughly accomplish the making of encapsulating structure 100d.
In this mandatory declaration is in the embodiment that other do not illustrate, also can be selected to the design mentioned like previous embodiment; Those skilled in the art works as can be with reference to the explanation of previous embodiment; According to actual demand, and select aforementioned components for use, to reach required technique effect.
In sum, because encapsulating carrier plate of the present invention is in the sidewall of upper surface, lower surface and the perforation of substrate type of configuration diamond carbon-coating all, and a type diamond carbon-coating has good insulation properties and thermal conductivity.Therefore, the connection pad of encapsulating carrier plate of the present invention can directly be electrically insulated through class diamond carbon-coating and substrate.Thus, except can reducing the step of making insulating barrier, also can reduce cost and also can improve the manufacture craft qualification rate.In addition, when light-emitting component engages manufacture craft when being electrically connected with the connection pad of encapsulating carrier plate via routing, can be through the good substrate of class diamond carbon-coating and thermal conductivity effectively with thermal energy transfer that light-emitting component the produced external world extremely.So encapsulating carrier plate of the present invention can effectively promote the service efficiency and the useful life of light-emitting component.
Though disclosed the present invention in conjunction with above embodiment; Yet it is not in order to limit the present invention; Be familiar with this operator in the technical field under any; Do not breaking away from the spirit and scope of the present invention, can do a little change and retouching, thus protection scope of the present invention should with enclose claim was defined is as the criterion.
Claims (13)
1. encapsulating carrier plate comprises:
Substrate has upper surface respect to one another and lower surface and a plurality of perforation, and those perforations connect this upper surface and this lower surface;
Type diamond carbon-coating covers the sidewall of this upper surface, this lower surface and those perforations of this substrate;
A plurality of connection pads, corresponding those perforations and be disposed on this upper surface of this substrate with this lower surface on; And
A plurality of conductive poles are disposed at respectively in those perforations, and are electrically connected with those connection pads.
2. encapsulating carrier plate as claimed in claim 1, wherein those connection pads and those conductive poles are one-body molded.
3. encapsulating carrier plate as claimed in claim 1, wherein respectively the aperture of this perforation by this upper surface of this substrate towards this lower surface convergent.
4. encapsulating carrier plate as claimed in claim 1, wherein respectively the aperture of this perforation by this upper surface of this substrate and this lower surface convergent inwardly.
5. encapsulating carrier plate as claimed in claim 1 also comprise insulating barrier, and those conductive poles comprises a plurality of hollow conductive poles, and wherein this insulating barrier is disposed in those hollow conductive poles, and those connection pads cover this insulating barrier.
6. the manufacture method of an encapsulating carrier plate comprises:
Provide one be formed with a plurality of perforations substrate, this substrate has a upper surface respect to one another and a lower surface, and those perforations connect this upper surface and this lower surfaces;
Form the sidewall of one type of diamond carbon-coating in this upper surface, this lower surface and those perforations of this substrate;
Form a metal level on such diamond carbon-coating; And
This metal level of patterning is to form on a plurality of these upper surfaces that are positioned at this substrate and this lower surface and connection pad and a plurality of conductive pole that is electrically connected with those connection pads of corresponding those perforations.
7. the manufacture method of encapsulating carrier plate as claimed in claim 6, the method that wherein forms such diamond carbon-coating comprises chemical vapour deposition (CVD) or physical vapour deposition (PVD).
8. the manufacture method of encapsulating carrier plate as claimed in claim 6, the method that wherein forms this metal level comprises galvanoplastic.
9. the manufacture method of encapsulating carrier plate as claimed in claim 6, wherein respectively the aperture of this perforation by this upper surface of this substrate towards this lower surface convergent.
10. the manufacture method of encapsulating carrier plate as claimed in claim 6, wherein respectively the aperture of this perforation by this upper surface of this substrate and this lower surface convergent inwardly.
11. the preparation method of encapsulating carrier plate as claimed in claim 6, the method that wherein forms those perforations comprises etching method or machine drilling method.
12. the manufacture method of encapsulating carrier plate as claimed in claim 6, wherein this metal level covers such diamond carbon-coating on the sidewall of those perforations and fills up those perforations.
13. the manufacture method of encapsulating carrier plate as claimed in claim 6 wherein before this metal level of patterning, also comprises:
Form an insulating barrier in those perforations, wherein this metal level covers such diamond carbon-coating on the sidewall of those perforations, and this insulating barrier fills up those perforations.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW100101464 | 2011-01-14 | ||
| TW100101464A TW201230260A (en) | 2011-01-14 | 2011-01-14 | Package carrier and manufacturing method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN102593313A true CN102593313A (en) | 2012-07-18 |
Family
ID=46481706
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2011100591012A Pending CN102593313A (en) | 2011-01-14 | 2011-03-11 | Package carrier and method for manufacturing the same |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN102593313A (en) |
| TW (1) | TW201230260A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103579011A (en) * | 2012-08-08 | 2014-02-12 | 旭德科技股份有限公司 | Package carrier and method for manufacturing the same |
| CN106653702A (en) * | 2015-11-04 | 2017-05-10 | 中国科学院深圳先进技术研究院 | Packaging structure of implanted chip and manufacturing method thereof |
| CN106960798A (en) * | 2016-01-08 | 2017-07-18 | 恒劲科技股份有限公司 | The preparation method of package substrate |
| WO2019064193A1 (en) * | 2017-09-28 | 2019-04-04 | International Business Machines Corporation | Hybrid land grid array connector for improved signal integrity |
| CN112968005A (en) * | 2021-02-02 | 2021-06-15 | 北京大学东莞光电研究院 | Diamond compact with interconnected pores and method for manufacturing same |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9538582B2 (en) | 2012-07-26 | 2017-01-03 | Taiwan Semiconductor Manufacturing Company, Ltd. | Warpage control in the packaging of integrated circuits |
| TWI581394B (en) * | 2015-10-20 | 2017-05-01 | 力成科技股份有限公司 | Carrier substrate |
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| US20100032705A1 (en) * | 2008-08-05 | 2010-02-11 | Samsung Electro-Mechanics Co. Ltd. | Light emitting diode package and method of manufacturing the same |
| WO2010135358A1 (en) * | 2009-05-20 | 2010-11-25 | Intematix Corporation | Light emitting device |
| CN101924169A (en) * | 2009-06-16 | 2010-12-22 | 日月光半导体制造股份有限公司 | Package structure of optical chip and manufacturing method thereof |
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2011
- 2011-01-14 TW TW100101464A patent/TW201230260A/en unknown
- 2011-03-11 CN CN2011100591012A patent/CN102593313A/en active Pending
Patent Citations (3)
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| US20100032705A1 (en) * | 2008-08-05 | 2010-02-11 | Samsung Electro-Mechanics Co. Ltd. | Light emitting diode package and method of manufacturing the same |
| WO2010135358A1 (en) * | 2009-05-20 | 2010-11-25 | Intematix Corporation | Light emitting device |
| CN101924169A (en) * | 2009-06-16 | 2010-12-22 | 日月光半导体制造股份有限公司 | Package structure of optical chip and manufacturing method thereof |
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103579011A (en) * | 2012-08-08 | 2014-02-12 | 旭德科技股份有限公司 | Package carrier and method for manufacturing the same |
| CN103579011B (en) * | 2012-08-08 | 2016-05-25 | 旭德科技股份有限公司 | Package carrier and method for manufacturing the same |
| CN106653702A (en) * | 2015-11-04 | 2017-05-10 | 中国科学院深圳先进技术研究院 | Packaging structure of implanted chip and manufacturing method thereof |
| CN106653702B (en) * | 2015-11-04 | 2019-03-01 | 中国科学院深圳先进技术研究院 | A kind of encapsulating structure of implanted chip and preparation method thereof |
| CN106960798A (en) * | 2016-01-08 | 2017-07-18 | 恒劲科技股份有限公司 | The preparation method of package substrate |
| CN106960798B (en) * | 2016-01-08 | 2019-05-24 | 恒劲科技股份有限公司 | The production method of package substrate |
| WO2019064193A1 (en) * | 2017-09-28 | 2019-04-04 | International Business Machines Corporation | Hybrid land grid array connector for improved signal integrity |
| CN111164835A (en) * | 2017-09-28 | 2020-05-15 | 国际商业机器公司 | Hybrid ground grid array connector with improved signal integrity |
| GB2579007A (en) * | 2017-09-28 | 2020-06-03 | Ibm | Hybrid land grid array connector for improved signal integrity |
| GB2579007B (en) * | 2017-09-28 | 2020-09-16 | Ibm | Hybrid land grid array connector for improved signal integrity |
| CN112968005A (en) * | 2021-02-02 | 2021-06-15 | 北京大学东莞光电研究院 | Diamond compact with interconnected pores and method for manufacturing same |
Also Published As
| Publication number | Publication date |
|---|---|
| TW201230260A (en) | 2012-07-16 |
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Application publication date: 20120718 |