CN109087995A - Perpendicular magnetization MTJ device and STT-MRAM - Google Patents
Perpendicular magnetization MTJ device and STT-MRAM Download PDFInfo
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Abstract
This application provides a kind of perpendicular magnetization MTJ device and STT-MRAM.The perpendicular magnetization MTJ device includes the reference layer for being sequentially stacked setting, insulative barriers layer, free layer, enhancement layer, removes coupling layer and fixing layer, wherein, reference layer is opposite with the direction of magnetization of fixing layer, enhancement layer is used to enhance the perpendicular magnetic anisotropic of free layer, goes coupling layer for free layer and fixing layer to be isolated.Critical write current is reduced, the energy consumption of STT-MRAM chip is reduced, while also improving the writing rate of data, also, fixing layer can offset reference layer and act on the scattered magnetic field on free layer, avoid interfering with each other between different bits；In addition, the magnetic anisotropy of free layer can be enhanced in the enhancement layer in perpendicular magnetization MTJ device, and then improve the thermal stability of free layer.
Description
Technical field
This application involves computer memory technical fields, in particular to a kind of perpendicular magnetization MTJ device and STT-
MRAM。
Background technique
Spin transfer torque magnetic RAM (Spin Transfer Torque Magnetic Random
Access Memory, abbreviation STT-MRAM) it is a kind of novel nonvolatile storage, core cell is MTJ device.MTJ
Mainly it is made of reference layer, insulative barriers layer and free layer.Reference layer is also referred to as pinning layer, its direction of magnetization remains unchanged,
The direction of magnetization for only changing free layer is allowed in the same direction or reversed with reference layer.
MTJ device makes electronics pass through insulative barriers layer by quantum tunneling effect.The tunneling probability of polarized electron and reference
Layer is related with the opposite magnetization direction of free layer.When free layer is identical as the direction of magnetization of reference layer, the tunnelling of polarized electron
Probability is higher, at this point, MTJ device shows as low resistance state (Rp)；And when free layer is opposite with the reference layer direction of magnetization, pole
The tunneling probability for changing electronics is lower, at this point, MTJ device shows as high resistance state (Rap).MRAM is utilized respectively MTJ device
Rp state and Rap state indicate logic state " 1 " and " 0 ", to realize the storage of data.Tunneling Magnetic Resistive resistance value is expressed as:
TMR=100% × (Rap-Rp)/Rp。
Different from traditional MRAM, STT-MRAM writes MRAM using the spin transfer torque effect (STT) of electric current
Enter operation, when spin polarized current passes through a thin magnetic film, polarization current can be exchanged with the local electronic of thin magnetic film
Interaction is allowed to tend to the polarization with spin polarized current so that the local magnetic moment to thin magnetic film applies a torque
Direction is identical, this phenomenon is known as spin transfer torque effect (STT effect).One direction of magnetization therewith is applied to thin magnetic film
Opposite polarization current, when polarization current intensity is more than certain threshold value, the magnetic moment of thin magnetic film itself can be flipped.Benefit
The direction of magnetization of the free layer of MTJ device can be made parallel with the direction of magnetization of reference layer with spin transfer torque effect or anti-
In parallel, to realize that " writing " operates.
In the prior art, can be divided into two classes for the mtj structure of STT-MRAM: one is magnetize MTJ (i- in face
), MTJ the direction of magnetization of reference layer and free layer is located in thin film planar.Another kind is perpendicular magnetization MTJ (p-MTJ), ginseng
The direction of magnetization for examining layer and free layer is each perpendicular to thin film planar (the thick direction of i.e. each layer).Perpendicular magnetization MTJ utilizes perpendicular magnetic
Anisotropy makes the easy magnetizing axis of film perpendicular to interface.Perpendicular magnetization MTJ is compared with magnetization MTJ in face can be further
Ground reduces MTJ of bit elemental size, to realize higher storage density, compared with the direction of magnetization is the MTJ in face, the direction of magnetization is hung down
Directly the critical reset current required for the MTJ at interface is smaller.
Currently, the critical write current (so that critical current that free layer is flipped) of perpendicular magnetization MTJ device is higher,
It is unfavorable for the raising of STT-MRAM chip energy consumption further decreased with storage density.
Summary of the invention
The main purpose of the application is to provide a kind of perpendicular magnetization MTJ device and STT-MRAM, to solve the prior art
The higher problem of the critical write current of middle perpendicular magnetization MTJ device.
To achieve the goals above, according to the one aspect of the application, a kind of perpendicular magnetization MTJ device is provided, this hangs down
Straight magnetization MTJ device include the reference layer for being sequentially stacked setting, insulative barriers layer, free layer, enhancement layer, go coupling layer and
Fixing layer, wherein the direction of magnetization of above-mentioned reference layer and above-mentioned fixing layer is on the contrary, above-mentioned enhancement layer is used to enhance above-mentioned free layer
Perpendicular magnetic anisotropic, it is above-mentioned to go coupling layer for above-mentioned free layer and above-mentioned fixing layer to be isolated.
Further, the coercivity of above-mentioned reference layer and above-mentioned fixing layer is followed successively by Hc1With Hc2, wherein Hc1>Hc2。
Further, the coercivity of above-mentioned reference layer and above-mentioned fixing layer is followed successively by Hc1With Hc2, wherein Hc2>Hc1。
Further, above-mentioned reference layer and above-mentioned fixing layer include multiple magnetospheres, and in above-mentioned reference layer with it is above-mentioned
Insulative barriers layer is reference magnetic layer apart from the smallest magnetosphere, in above-mentioned fixing layer with go coupling layer apart from the smallest magnetism
Layer is fixed magnetic layer, and above-mentioned reference magnetic layer is opposite with the direction of magnetization of above-mentioned fixed magnetic layer.
Further, the material of above-mentioned reference layer be selected from Co, Ni, Fe, CoFe, CoNi, NiFe, CoFeNi, CoB, FeB,
In CoFeB, NiFeB, Pt, Pd, PtPd, FePt, Ir, Ru, Re, Rh, B, Zr, V, Nb, Ta, Mo, W, Cu, Ag, Au, Al and Hf
It is one or more.
Further, the material of above-mentioned insulative barriers layer is selected from magnesia compound, silicon oxide compound, silicon-nitrogen compound, aluminium
One of oxygen compound, magnalium oxygen compound, titanium oxygen compound layer, tantalum oxygen compound, calcium oxygen compound and iron oxide
Or it is a variety of, the thickness of preferably above-mentioned insulative barriers layer is between 0.5~20nm.
Further, the material of above-mentioned free layer be selected from Co, Fe, Ni, Pt, Pd, Ru, Ta, Cu, CoB, FeB, NiB,
CoFe、NiFe、CoNi、CoFeNi、CoFeB、NiFeB、CoNiB、CoFeNiB、FePt、FePd、CoPt、CoPd、CoFePt、
One of CoFePd, FePtPd, CoPtPd and CoFePtPd or a variety of.
Further, the material of above-mentioned enhancement layer is selected from Ag, Au, Pt, Pd, Rh, Ru, Re, Mo, Hf, Ir, Ni, Nb, W and V
One of or it is a variety of, the thickness of preferably above-mentioned enhancement layer is between 0.2~1nm.
Further, the above-mentioned material for removing coupling layer is selected from one of Cu, Al, Cr, Ta, Zr, TaN and TiN or more
Kind, the preferably above-mentioned thickness for removing coupling layer is between 0.5~10nm.
Further, the material of above-mentioned fixing layer be selected from Co, Ni, Fe, CoFe, CoNi, NiFe, CoFeNi, CoB, FeB,
In CoFeB, NiFeB, Pt, Pd, PtPd, FePt, Ir, Ru, Re, Rh, B, Zr, V, Nb, Ta, Mo, W, Cu, Ag, Au, Al and Hf
It is one or more.
Further, above-mentioned perpendicular magnetization MTJ device further include: the separate of above-mentioned reference layer is arranged in first electrode layer
On the surface of above-mentioned insulative barriers layer；The separate above-mentioned surface for removing coupling layer of above-mentioned fixing layer is arranged in the second electrode lay
On.
According to the another aspect of the application, a kind of STT-MRAM, including perpendicular magnetization MTJ device, the STT- are provided
MRAM is any above-mentioned perpendicular magnetization MTJ device.
Using the technical solution of the application, which is carrying out data using spin transfer torque effect
During write-in, free layer is flowed to from fixing layer or torque is applied to free layer from the electrons that free layer flows to fixing layer,
Apply a positive bias voltage to MTJ device after fixing layer, to be consolidated so that electronics flows to reference layer from fixing layer
The polarized electrons of given layer apply a torque to free layer, so that the free layer direction of magnetization is identical as the fixing layer direction of magnetization,
On the other hand, anti-from reference layer since the spin filtering of reference layer acts on during electronics flows to reference layer from free layer
The polarized electron for being emitted back towards free layer can apply a torque to free layer, so that the free layer direction of magnetization and the reference layer direction of magnetization
Conversely, because reference layer and the fixing layer direction of magnetization are on the contrary, so torque side that reference layer and fixing layer apply free layer
To consistent.
One reversed bias voltage is applied to MTJ device, so that electronics flows to fixing layer from reference layer, by reference layer
Afterwards, the polarized electrons of layer are referenced, one torque is applied to free layer, so that the free layer direction of magnetization and reference layer magnetization side
To identical, another aspect, during electronics flows to fixing layer from free layer, since the spin filtering of fixing layer acts on, from
The polarized electron that fixing layer is reflected back free layer also can apply a torque to free layer, so that the free layer direction of magnetization and fixation
Layer the direction of magnetization conversely, because the direction of magnetization of reference layer and fixing layer on the contrary, so reference layer and fixing layer are to free layer institute
The torque direction of application is consistent.
In conclusion fixing layer is consistent with action direction of the reference layer to free layer to the torque direction of free layer, in turn
So that free layer is easier to be flipped, critical write current is thereby reduced, reduces the energy consumption of STT-MRAM chip, simultaneously
The writing rate of data is also improved, also, fixing layer can offset reference layer and act on the scattered magnetic field on free layer, avoid not
With interfering with each other between bit；In addition, the enhancement layer in above-mentioned perpendicular magnetization MTJ device can be enhanced the magnetic of free layer respectively to
The opposite sex, and then improve the thermal stability of free layer.
Detailed description of the invention
The accompanying drawings constituting a part of this application is used to provide further understanding of the present application, and the application's shows
Meaning property embodiment and its explanation are not constituted an undue limitation on the present application for explaining the application.In the accompanying drawings:
The structure that Fig. 1 shows the perpendicular magnetization MTJ device provided according to a kind of typical embodiment of the application is shown
It is intended to；And
Fig. 2 shows the structural schematic diagrams for the perpendicular magnetization MTJ device that another embodiment of the application provides.
Wherein, the above drawings include the following reference numerals:
1, first electrode layer；2, reference layer；3, insulative barriers layer；4, free layer；5, enhancement layer；6, coupling layer is removed；7,
Fixing layer；8, the second electrode lay.
Specific embodiment
It is noted that following detailed description is all illustrative, it is intended to provide further instruction to the application.Unless another
It indicates, all technical and scientific terms used herein has usual with the application person of an ordinary skill in the technical field
The identical meanings of understanding.
It should be noted that term used herein above is merely to describe specific embodiment, and be not intended to restricted root
According to the illustrative embodiments of the application.As used herein, unless the context clearly indicates otherwise, otherwise singular
Also it is intended to include plural form, additionally, it should be understood that, when in the present specification using term "comprising" and/or " packet
Include " when, indicate existing characteristics, step, operation, device, component and/or their combination.
As background technique is introduced, the critical write current of perpendicular magnetization MTJ device in the prior art is higher, is
Solution technical problem as above, present applicant proposes a kind of perpendicular magnetization MTJ device and STT-MRAM.
In a kind of typical embodiment of the application, a kind of perpendicular magnetization MTJ device is provided, as shown in Figure 1, the device
Part includes the reference layer 2 for being sequentially stacked setting, insulative barriers layer 3, free layer 4, enhancement layer 5, removes coupling layer 6 and fixing layer
7, wherein the direction of magnetization of above-mentioned reference layer 2 and above-mentioned fixing layer 7 is on the contrary, above-mentioned enhancement layer 5 is used to enhance above-mentioned free layer 4
Perpendicular magnetic anisotropic, it is above-mentioned go coupling layer 6 for above-mentioned free layer 4 and above-mentioned fixing layer 7 to be isolated so that free layer
The direction of magnetization can not be influenced by the direction of magnetization of fixing layer and independently be overturn, so that fixing layer is only in the mistake of STT write-in
Free layer generation is acted in journey.The direction of magnetization of free layer, reference layer and fixing layer perpendicular to thin film planar (i.e. each layer
Thickness direction).
Since the direction of magnetization of reference layer in the prior art immobilizes, so the direction of magnetization of above-mentioned fixing layer
It immobilizes.Here " immobilizing " be not necessarily referring to it is absolute immobilize, be exactly to change relative to the direction of magnetization of free layer
For the difficulty or ease of change, i.e. the change of the direction of magnetization of reference layer and fixing layer is difficult, and the coercivity of the material of the two is very big, from
It is easier to change by the direction of magnetization of layer, the coercivity of corresponding material is smaller.
Above-mentioned perpendicular magnetization MTJ device is during carrying out data write-in using spin transfer torque effect, from admittedly
Given layer flows to free layer or applies torque to free layer from the electrons that free layer flows to fixing layer, (refers to vertical to MTJ device
Magnetize MTJ device, MTJ device hereinafter also illustrates that perpendicular magnetization MTJ device) apply a positive bias voltage, so that
Electronics flows to reference layer from fixing layer, and after fixing layer, the polarized electrons of fixed layer apply a torque to free layer,
So that the free layer direction of magnetization is identical as the fixing layer direction of magnetization, on the other hand, the mistake of reference layer is flowed to from free layer in electronics
Cheng Zhong, since the spin filtering of reference layer acts on, the polarized electron for being reflected back free layer from reference layer can apply one to free layer
A torque so that the free layer direction of magnetization and the reference layer direction of magnetization conversely, because reference layer and the fixing layer direction of magnetization on the contrary,
So reference layer is consistent with the torque direction that fixing layer applies free layer.
One reversed bias voltage is applied to MTJ device, so that electronics flows to fixing layer from reference layer, by reference layer
Afterwards, the polarized electrons of layer are referenced, one torque is applied to free layer, so that the free layer direction of magnetization and reference layer magnetization side
To identical, another aspect, during electronics flows to fixing layer from free layer, since the spin filtering of fixing layer acts on, from
The polarized electron that fixing layer is reflected back free layer also can apply a torque to free layer, so that the free layer direction of magnetization and fixation
Layer the direction of magnetization conversely, because the direction of magnetization of reference layer and fixing layer on the contrary, so reference layer and fixing layer are to free layer institute
The torque direction of application is consistent.
In conclusion fixing layer is consistent with action direction of the reference layer to free layer to the torque direction of free layer, in turn
So that free layer is easier to be flipped, critical write current is reduced, reduces the energy consumption of STT-MRAM chip, while also mentioning
The high writing rate of data, also, fixing layer can offset reference layer and act on the scattered magnetic field on free layer, avoid different positions
Interfering with each other between member；In addition, the magnetic of free layer can be enhanced respectively to different in the enhancement layer in above-mentioned perpendicular magnetization MTJ device
Property, and then improve the thermal stability of free layer.
In the perpendicular magnetization MTJ device of the application, the coercivity of free layer is less than the coercive of reference layer and fixing layer
Power, for the coercitive relationship of fixing layer and reference layer, in a kind of embodiment of the application, above-mentioned reference layer and above-mentioned fixation
The coercivity of layer is followed successively by Hc1With Hc2, wherein Hc1>Hc2.That is for fixing layer, the direction of magnetization is more difficult to occur reference layer
Change.
In another embodiment of the application, the coercivity of above-mentioned reference layer and above-mentioned fixing layer is followed successively by Hc1With Hc2,
In, Hc2>Hc1.That is for reference layer, the direction of magnetization is more difficult to change fixing layer.
In the another embodiment of the application, above-mentioned reference layer and above-mentioned fixing layer include multiple magnetospheres, and above-mentioned
With above-mentioned insulative barriers layer apart from the smallest magnetosphere be reference magnetic layer in reference layer, in above-mentioned fixing layer with remove coupling layer
It is fixed magnetic layer apart from the smallest magnetosphere, above-mentioned reference magnetic layer is opposite with the direction of magnetization of above-mentioned fixed magnetic layer.
The material of reference layer in the application can be selected from any material for meeting reference layer performance requirement in the prior art
Material, those skilled in the art can select suitable material according to the actual situation.
In order to further ensure the performance of reference layer, in a kind of embodiment of the application, the material of above-mentioned reference layer is selected from
Co、Ni、Fe、CoFe、CoNi、NiFe、CoFeNi、CoB、FeB、CoFeB、NiFeB、Pt、Pd、PtPd、FePt、Ir、Ru、Re、
One of Rh, B, Zr, V, Nb, Ta, Mo, W, Cu, Ag, Au, Al and Hf or a variety of.Reference layer is usually multi-layer film structure, is needed
The type and thickness for adjusting each layer film make its direction of magnetization perpendicular to its interface.
In the another embodiment of the application, the material of above-mentioned insulative barriers layer be selected from magnesia compound, silicon oxide compound,
Silicon-nitrogen compound, aluminum oxide, magnalium oxygen compound, titanium oxygen compound layer, tantalum oxygen compound, calcium oxygen compound and iron aoxidize
Close one of object or a variety of.These materials have preferable insulation performance, can be further ensured that perpendicular magnetization MTJ device has
There is good performance.
Insulative barriers layer and second insulating layer in the application are not limited to a variety of materials layer mentioned above, this field skill
Art personnel can select according to the actual situation suitable material layer as insulative barriers layer.
It is above-mentioned in a kind of embodiment of the application in order to obtain suitable RA (resistance value of perpendicular magnetization MTJ device) value
The thickness of insulative barriers layer is between 0.5~20nm.
Those skilled in the art can select any property that can satisfy free layer in the prior art according to the actual situation
Material of the material that can be required as free layer.
In another embodiment of the application, the material of above-mentioned free layer be selected from Co, Fe, Ni, Pt, Pd, Ru, Ta, Cu,
CoB、FeB、NiB、CoFe、NiFe、CoNi、CoFeNi、CoFeB、NiFeB、CoNiB、CoFeNiB、FePt、FePd、CoPt、
One of CoPd, CoFePt, CoFePd, FePtPd, CoPtPd and CoFePtPd or a variety of.These materials are easier to obtain
It takes, and can be further ensured that perpendicular magnetization MTJ device is with good performance.
In order to further ensure the perpendicular magnetic anisotropic of free layer can be enhanced in the enhancement layer of the application, and then enhance certainly
By the thermal stability of layer, in a kind of embodiment of the application, the material of above-mentioned enhancement layer be selected from Ag, Au, Pt, Pd, Rh, Ru, Re,
One of Mo, Hf, Ir, Ni, Nb, W and V or a variety of.
Certainly, the material of the enhancement layer of the application is not limited to material mentioned above, and those skilled in the art can root
Enhancement layer is formed according to the material that actual conditions selection others meet enhancement layer performance requirement.
In another embodiment of the application, the thickness of above-mentioned enhancement layer, in this way can be further between 0.2~1nm
Guarantee that enhancement layer can effectively improve the perpendicular magnetic anisotropic of free layer.
In the another embodiment of the application, the above-mentioned material for removing coupling layer be selected from Cu, Al, Cr, Ta, Zr, TaN with
One of TiN or a variety of, these materials can be effectively isolated free layer and fixing layer.
Certainly, the application goes the material of coupling layer to be not limited to material mentioned above, and those skilled in the art can
Coupling layer is removed to select other satisfactory materials to form the above-mentioned of the application according to the actual situation.
In order to further ensure this goes the buffer action of coupling layer and avoid polarized electron in transmission process turns over
Turn, in a kind of embodiment of the application, the above-mentioned thickness for removing coupling layer is between 0.5~10nm.
In another embodiment of the application, the material of above-mentioned fixing layer be selected from Co, Ni, Fe, CoFe, CoNi, NiFe,
CoFeNi、CoB、FeB、CoFeB、NiFeB、Pt、Pd、PtPd、FePt、Ir、Ru、Re、Rh、B、Zr、V、Nb、Ta、Mo、W、Cu、
One of Ag, Au, Al and Hf or a variety of.It may further ensure that effect of the fixing layer to free layer in this way, and then guarantee
The perpendicular magnetization MTJ device has lesser critical write current.
Certainly, the material of the fixing layer of the application is not limited to above-mentioned material, and those skilled in the art can be according to reality
Situation selection others in border meet the material of the performance requirement of fixing layer.
In the another embodiment of the application, as shown in Fig. 2, above-mentioned perpendicular magnetization MTJ device further includes first electrode layer 1
With the second electrode lay 8, wherein first electrode layer 1 is arranged on the surface far from above-mentioned insulative barriers layer 3 of above-mentioned reference layer 2；
The second electrode lay 8 is arranged on the separate above-mentioned surface for removing coupling layer 6 of above-mentioned fixing layer 7.
Forward bias V1 is applied to MTJ device, i.e. first electrode layer 1 applies forward voltage, and the second electrode lay 8 applies negative electricity
Pressure or 0 applies one to free layer 4 by the polarized electrons of fixing layer 7 so that electronics flows to reference layer 2 from fixing layer 7
On the other hand torque, flows to from free layer 4 in electronics and joins so that 4 direction of magnetization of free layer is identical as 7 direction of magnetization of fixing layer
During examining layer 2, since the spin filtering of reference layer 2 acts on, the polarized electron for being reflected back free layer 4 from reference layer 2 can be right
Free layer 4 applies a torque, so that 4 direction of magnetization of free layer and 2 direction of magnetization of reference layer are conversely, because reference layer 2 and solid
7 direction of magnetization of given layer on the contrary, so reference layer 2 is consistent with the torque direction that fixing layer 7 applies free layer 4, all make from
By 4 direction of magnetization of layer and 2 direction of magnetization of reference layer on the contrary, to which data " 0 " be written.
One reverse biased V is applied to MTJ device1' (the V1' and V1Current direction be opposite, and the absolute value of the two
Can be equal, can also be unequal, for different devices, the order of magnitude relationship of the two be different) so that electronics from
Reference layer 2 flows to fixing layer 7, applies a torque to free layer 4 by the polarized electrons of reference layer 2, so that 4 magnetic of free layer
It is identical as 2 direction of magnetization of reference layer to change direction, on the other hand, during electronics flows to fixing layer 7 from free layer 4, due to
The spin filtering of fixing layer 7 acts on, and the polarized electron for being reflected back free layer 4 from fixing layer 7 also can apply a power to free layer 4
Square, so that 4 direction of magnetization of free layer is with 7 direction of magnetization of fixing layer conversely, because the direction of magnetization phase of reference layer 2 and fixing layer 7
Instead, so reference layer 2 is consistent with the torque direction that fixing layer 7 applies free layer 4, all make 4 direction of magnetization of free layer with
The direction of magnetization of reference layer 2 is identical, so that data " 1 " be written.
In the typical embodiment of the another kind of the application, a kind of STT-MRAM is provided, which includes vertical
Magnetize MTJ device, which is any above-mentioned perpendicular magnetization MTJ device.
Above-mentioned STT-MRAM so that its chip energy consumption is smaller, and writes due to including above-mentioned perpendicular magnetization MTJ device
It is higher to enter efficiency.
In order to enable those skilled in the art clearly understand the technical solution of the application, below with reference to specific
Embodiment illustrates the technical solution of the application.
Embodiment 1
STT-MRAM memory includes multiple MTJ devices, further includes the switching circuit being electrically connected with MTJ device, and is switched
Circuit includes derailing switch, wordline, bit line and source line.Specific connection relationship with it is in the prior art identical, just no longer go to live in the household of one's in-laws on getting married herein
It states.
As shown in Fig. 2, first electrode layer 1 is Ta layers, thickness is the structure of MTJ cellReference layer 2 includes multiple knots
Structure layer, along far from first electrode layer direction according to forWherein reference configuration layer is
CoFeB, the direction of magnetization is perpendicular to thin film planar (thickness direction of i.e. each layer)；Insulative barriers layer 3 is MgO layer, and thickness isIts forbidden bandwidth η1=7.6eV；Free layer 4 isThick CoFeB layer；Enhancement layer 5 is Pd layers, and thickness isDegaussing
Coupling layer 6 is Cu layers, and thickness isFixing layer 7 includes multiple structure sheafs, and goes to the direction of coupling layer 6 successively along separate
ForWherein, the CoFe in fixing layer is fixed structure layer, and the direction of magnetization is vertical
In thin film planar (thickness direction of i.e. each layer).
Embodiment 2
The difference from embodiment 1 is that the thickness of enhancement layer isRemoving the thickness of coupling layer is
Embodiment 3
The difference from embodiment 1 is that the thickness of enhancement layer isRemoving the thickness of coupling layer is
Embodiment 4
The difference from embodiment 1 is that the thickness of enhancement layer is
Embodiment 5
The difference from embodiment 1 is that removing the thickness of coupling layer is
Comparative example
Difference with embodiment is that there is no increase between the second electrode lay and free layer for the perpendicular magnetization MTJ device
Strong layer removes coupling layer and fixing layer.
MTJ device is etched into the bit that diameter is 100nm, reality is tested using electricity and magnetics test macro at room temperature
The critical write-in current density for applying example and comparative example, the write time under 50 μ A electric currents.Specific test result is shown in Table 1.
Table 1
By the data in above-mentioned table it is found that compared with comparative example, the critical write current of each embodiment is smaller, and is written
Time is shorter, and the energy consumption for thereby reducing STT-MRAM chip improves the write efficiency of STT-MRAM chip；Wherein, with implementation
Example 1 is compared, and the thickness in the MTJ device of embodiment 4 due to enhancement layer isIt is greater thanSo its critical write current phase
It is larger to embodiment 1, and the write time is longer with respect to embodiment 1；Compared with Example 1, in the MTJ device of embodiment 5 due to
Removing the thickness of coupling layer isSmaller, so its critical write current is larger with respect to embodiment 1, and the write time is relatively real
It is longer to apply example 1.
It can be seen from the above description that the application the above embodiments realize following technical effect:
1), in the perpendicular magnetization MTJ device of the application, fixing layer is to the torque direction of free layer and reference layer to free layer
Action direction it is consistent so that free layer is easier to be flipped, reduces critical write current, reduce STT-MRAM
The energy consumption of chip, while the writing rate of data is also improved, also, fixing layer can offset reference layer and act on free layer
Scattered magnetic field, avoid interfering with each other between different bits；In addition, the enhancement layer in above-mentioned perpendicular magnetization MTJ device can increase
The magnetic anisotropy of strong free layer, and then improve the thermal stability of free layer.
2), the STT-MRAM of the application due to include above-mentioned perpendicular magnetization MTJ device so that its chip energy consumption compared with
It is small, and storage efficiency is higher.
The foregoing is merely preferred embodiment of the present application, are not intended to limit this application, for the skill of this field
For art personnel, various changes and changes are possible in this application.Within the spirit and principles of this application, made any to repair
Change, equivalent replacement, improvement etc., should be included within the scope of protection of this application.
Claims (12)
1. a kind of perpendicular magnetization MTJ device, which is characterized in that the perpendicular magnetization MTJ device includes being sequentially stacked the ginseng of setting
It examines layer (2), insulative barriers layer (3), free layer (4), enhancement layer (5), remove coupling layer (6) and fixing layer (7), wherein institute
The direction of magnetization of reference layer (2) and the fixing layer (7) is stated on the contrary, the enhancement layer (5) is for enhancing the free layer (4)
Perpendicular magnetic anisotropic, it is described to go to coupling layer (6) for the free layer (4) and the fixing layer (7) to be isolated.
2. perpendicular magnetization MTJ device according to claim 1, which is characterized in that the reference layer (2) and the fixing layer
(7) coercivity is followed successively by Hc1With Hc2, wherein Hc1>Hc2。
3. perpendicular magnetization MTJ device according to claim 1, which is characterized in that the reference layer (2) and the fixing layer
(7) coercivity is followed successively by Hc1With Hc2, wherein Hc2>Hc1。
4. perpendicular magnetization MTJ device according to claim 1, which is characterized in that the reference layer (2) and the fixing layer
(7) include multiple magnetospheres, and join with the insulative barriers layer (3) apart from the smallest magnetosphere in the reference layer (2)
Examine magnetosphere, in the fixing layer (7) with it is described to remove coupling layer (6) apart from the smallest magnetosphere be fixed magnetic layer, it is described
Reference magnetic layer is opposite with the direction of magnetization of the fixed magnetic layer.
5. perpendicular magnetization MTJ device according to claim 1, which is characterized in that the material of the reference layer (2) is selected from
Co、Ni、Fe、CoFe、CoNi、NiFe、CoFeNi、CoB、FeB、CoFeB、NiFeB、Pt、Pd、PtPd、FePt、Ir、Ru、Re、
One of Rh, B, Zr, V, Nb, Ta, Mo, W, Cu, Ag, Au, Al and Hf or a variety of.
6. perpendicular magnetization MTJ device according to claim 1, which is characterized in that the material of the insulative barriers layer (3) selects
From magnesia compound, silicon oxide compound, silicon-nitrogen compound, aluminum oxide, magnalium oxygen compound, titanium oxygen compound layer, tantalum oxygen
One of compound, calcium oxygen compound and iron oxide are a variety of, and the thickness of the preferably described insulative barriers layer (3) is 0.5
Between~20nm.
7. perpendicular magnetization MTJ device according to claim 1, which is characterized in that the material of the free layer (4) is selected from
Co、Fe、Ni、Pt、Pd、Ru、Ta、Cu、CoB、FeB、NiB、CoFe、NiFe、CoNi、CoFeNi、CoFeB、NiFeB、CoNiB、
One of CoFeNiB, FePt, FePd, CoPt, CoPd, CoFePt, CoFePd, FePtPd, CoPtPd and CoFePtPd or more
Kind.
8. perpendicular magnetization MTJ device according to claim 1, which is characterized in that the material of the enhancement layer (5) is selected from
One of Ag, Au, Pt, Pd, Rh, Ru, Re, Mo, Hf, Ir, Ni, Nb, W and V or a variety of, the thickness of the preferably described enhancement layer (5)
Degree is between 0.2~1nm.
9. perpendicular magnetization MTJ device according to claim 1, which is characterized in that the material choosing for removing coupling layer (6)
From one of Cu, Al, Cr, Ta, Zr, TaN and TiN or a variety of, preferably it is described go the thickness of coupling layer (6) 0.5~
Between 10nm.
10. perpendicular magnetization MTJ device according to claim 1, which is characterized in that the material of the fixing layer (7) is selected from
Co、Ni、Fe、CoFe、CoNi、NiFe、CoFeNi、CoB、FeB、CoFeB、NiFeB、Pt、Pd、PtPd、FePt、Ir、Ru、Re、
One of Rh, B, Zr, V, Nb, Ta, Mo, W, Cu, Ag, Au, Al and Hf or a variety of.
11. perpendicular magnetization MTJ device according to claim 1, which is characterized in that the perpendicular magnetization MTJ device is also wrapped
It includes:
First electrode layer (1) is arranged on the surface far from the insulative barriers layer (3) of the reference layer (2)；And
The second electrode lay (8) is arranged and goes on the surface of coupling layer (6) in the fixing layer (7) far from described.
12. a kind of STT-MRAM, including perpendicular magnetization MTJ device, which is characterized in that the perpendicular magnetization MTJ device is right
It is required that perpendicular magnetization MTJ device described in any one of 1 to 11.
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111540395A (en) * | 2020-03-25 | 2020-08-14 | 北京航空航天大学 | Magnetic random access memory cell and data writing method thereof |
| CN111613720A (en) * | 2019-02-25 | 2020-09-01 | 上海磁宇信息科技有限公司 | Magnetic random access memory storage unit and magnetic random access memory |
| CN112447257A (en) * | 2019-08-30 | 2021-03-05 | 中电海康集团有限公司 | Test structure and test method |
| CN112490354A (en) * | 2019-09-11 | 2021-03-12 | 上海磁宇信息科技有限公司 | Magnetic random access memory storage unit and magnetic random access memory |
| WO2021189295A1 (en) * | 2020-03-25 | 2021-09-30 | 北京航空航天大学 | Magnetic random access memory and data writing method therefor |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101093721A (en) * | 2006-06-22 | 2007-12-26 | 株式会社东芝 | Magnetoresistive element and magnetic memory |
| CN101359761A (en) * | 2008-09-26 | 2009-02-04 | 清华大学 | Novel microwave oscillator driven by spinning current |
| CN102299256A (en) * | 2011-07-18 | 2011-12-28 | 清华大学 | Magnetoelectric random memory cell and magnetoelectric random memory comprising same |
| CN102637939A (en) * | 2012-04-28 | 2012-08-15 | 中国科学院苏州纳米技术与纳米仿生研究所 | Spinning microwave oscillator based on vertical magnetizing free layer and manufacturing method thereof |
| CN103887424A (en) * | 2012-12-20 | 2014-06-25 | 三星电子株式会社 | Magnetic junction, method of providing magnetic junction and magnetic memory |
| CN105223414A (en) * | 2014-06-18 | 2016-01-06 | 中国科学院苏州纳米技术与纳米仿生研究所 | A kind of highly sensitive novel microwave detector |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2012043967A (en) * | 2010-08-19 | 2012-03-01 | Sony Corp | Magnetic memory element |
| US8907436B2 (en) * | 2010-08-24 | 2014-12-09 | Samsung Electronics Co., Ltd. | Magnetic devices having perpendicular magnetic tunnel junction |
| KR101446338B1 (en) * | 2012-07-17 | 2014-10-01 | 삼성전자주식회사 | Magnetic device and method of manufacturing the same |
| CN105390609A (en) * | 2015-12-01 | 2016-03-09 | 中电海康集团有限公司 | MRAM (Magnetic Random Access Memory) assisted by spin Hall effect |
-
2017
- 2017-06-14 CN CN201710447813.9A patent/CN109087995B/en active Active
- 2017-12-07 WO PCT/CN2017/114961 patent/WO2018227901A1/en active Application Filing
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101093721A (en) * | 2006-06-22 | 2007-12-26 | 株式会社东芝 | Magnetoresistive element and magnetic memory |
| CN101359761A (en) * | 2008-09-26 | 2009-02-04 | 清华大学 | Novel microwave oscillator driven by spinning current |
| CN102299256A (en) * | 2011-07-18 | 2011-12-28 | 清华大学 | Magnetoelectric random memory cell and magnetoelectric random memory comprising same |
| CN102637939A (en) * | 2012-04-28 | 2012-08-15 | 中国科学院苏州纳米技术与纳米仿生研究所 | Spinning microwave oscillator based on vertical magnetizing free layer and manufacturing method thereof |
| CN103887424A (en) * | 2012-12-20 | 2014-06-25 | 三星电子株式会社 | Magnetic junction, method of providing magnetic junction and magnetic memory |
| CN105223414A (en) * | 2014-06-18 | 2016-01-06 | 中国科学院苏州纳米技术与纳米仿生研究所 | A kind of highly sensitive novel microwave detector |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111613720A (en) * | 2019-02-25 | 2020-09-01 | 上海磁宇信息科技有限公司 | Magnetic random access memory storage unit and magnetic random access memory |
| CN111613720B (en) * | 2019-02-25 | 2022-09-09 | 上海磁宇信息科技有限公司 | Magnetic random access memory storage unit and magnetic random access memory |
| CN112447257A (en) * | 2019-08-30 | 2021-03-05 | 中电海康集团有限公司 | Test structure and test method |
| CN112447257B (en) * | 2019-08-30 | 2022-10-14 | 中电海康集团有限公司 | Test structure and test method |
| CN112490354A (en) * | 2019-09-11 | 2021-03-12 | 上海磁宇信息科技有限公司 | Magnetic random access memory storage unit and magnetic random access memory |
| CN111540395A (en) * | 2020-03-25 | 2020-08-14 | 北京航空航天大学 | Magnetic random access memory cell and data writing method thereof |
| WO2021189295A1 (en) * | 2020-03-25 | 2021-09-30 | 北京航空航天大学 | Magnetic random access memory and data writing method therefor |
| CN111540395B (en) * | 2020-03-25 | 2022-11-01 | 北京航空航天大学 | Magnetic random access memory cell and data writing method thereof |
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