CN112133343B - Magnetic memory cell and magnetic memory - Google Patents
Magnetic memory cell and magnetic memory Download PDFInfo
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- CN112133343B CN112133343B CN201910552465.0A CN201910552465A CN112133343B CN 112133343 B CN112133343 B CN 112133343B CN 201910552465 A CN201910552465 A CN 201910552465A CN 112133343 B CN112133343 B CN 112133343B
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- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
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Abstract
The present invention provides a magnetic memory cell comprising: the phase change structure comprises a reference layer, a barrier layer, a free layer, a nonmagnetic isolation layer and a phase change layer which are sequentially stacked, wherein the phase change layer changes between an antiferromagnet phase and a ferromagnetic phase according to a phase change temperature, and when the phase change layer is in the ferromagnetic phase, a bias magnetic field is provided for the free layer, so that the magnetization direction of the free layer deviates from the direction collinear with the magnetization direction of the reference layer; the nonmagnetic isolating layer is used for preventing the phase change layer and the free layer from generating magnetic coupling. The invention can reduce the critical switching current of the free layer.
Description
Technical Field
The present invention relates to the field of magnetic memory technology, and more particularly, to a magnetic memory cell and a magnetic memory.
Background
Magnetic Random Access Memory (MRAM) is considered as a future solid-state nonvolatile Memory, and has the characteristics of high speed reading and writing, large capacity, low power consumption and the like. Spin Transfer Torque Magnetic Random Access Memory (STT-MRAM) that utilizes Spin current to achieve Magnetic moment flipping is a common implementation.
The conventional structure of the memory cell of STT-MRAM, which includes a top electrode, a bottom electrode and an MTJ therebetween as shown in FIG. 1, requires a random small angle deflection of the magnetic moment of the free layer caused by thermal perturbation during the writing process of STT-MRAM, and the initial spin transfer torque is small, because the magnetization directions of the free layer and the reference layer are collinear. The magnetization switching of the free layer can occur only when the write current exceeds a certain threshold.
In the process of implementing the invention, the inventor finds that at least the following technical problems exist in the prior art:
in the conventional STT-MRAM storage unit, the critical switching current of the MTJ free layer is large, so that a large writing current is required, the large writing current can cause high power consumption, and in addition, the breakdown of the MTJ barrier layer can easily cause the damage of a device.
Disclosure of Invention
To solve the above problems, the present invention provides a magnetic memory cell capable of reducing the critical current for MTJ free layer switching.
In a first aspect, the present invention provides a magnetic memory cell comprising: the phase change structure comprises a reference layer, a barrier layer, a free layer, a nonmagnetic isolation layer and a phase change layer which are sequentially stacked, wherein the phase change layer changes between an antiferromagnet phase and a ferromagnetic phase according to a phase change temperature, and when the phase change layer is in the ferromagnetic phase, a bias magnetic field is provided for the free layer, so that the magnetization direction of the free layer deviates from the direction collinear with the magnetization direction of the reference layer; the nonmagnetic isolating layer is used for preventing the phase change layer and the free layer from generating magnetic coupling.
Optionally, the phase change layer is an anti-ferromagnetic phase when the temperature is below the phase transition temperature and a ferromagnetic phase when the temperature is above the phase transition temperature.
Optionally, the phase change layer is made of FeRhX, X is any one or a combination of any more of Ir, Pt, V, Mn, Au, Co, and Ni, where Rh atoms account for 40% to 60% of the total number of atoms, and X atoms account for 0 to 15% of the total number of atoms.
Optionally, the phase change temperature of the phase change layer is between 50 ℃ and 200 ℃.
Optionally, the material of the nonmagnetic separation layer is a mixture of one or more of MgO, Cu, Au, Al, Ta, Ag, Mo, Ir, and W.
Optionally, the material of the free layer and the reference layer is any one of Co, Fe, Ni, CoB, FeB, NiB, CoFe, NiFe, CoNi, and CoFeB.
Optionally, the barrier layer is made of MgO or HfO 2 、AlO x And TaO x Any one of them.
Optionally, the laminated structure further comprises: the coupling layer is positioned on one side surface of the reference layer far away from the barrier layer, the pinning layer is positioned on one side surface of the coupling layer far away from the reference layer, and the reference layer, the coupling layer and the pinning layer form a synthetic antiferromagnetic structure for reducing the influence of stray fields on magnetization switching of the free layer.
Optionally, the coupling layer is one of Ru, Ir, Rh, Ti, and Ta, and the pinning layer is a magnetic single layer film or a multilayer film structure with large anisotropy.
In a second aspect, the present invention provides a magnetic memory comprising the above magnetic memory cell.
According to the magnetic storage unit and the magnetic storage, the phase change layer is deposited on the free layer, the phase change layer has the antiferromagnetic-ferromagnetic phase change characteristic, the phase change layer can generate an equivalent bias field after being changed into a ferromagnetic phase, and the equivalent bias field can cause the magnetic moment of the free layer to deviate from the initial direction, so that the initial spin transfer torque is increased; on the other hand, in the writing process, the phase change layer contributes extra auxiliary torque due to the scattering effect on spin-polarized electrons, so that the critical switching current of the free layer is reduced, the writing current is reduced, the probability of breakdown of the MTJ barrier layer is reduced, and the device is protected.
Drawings
FIG. 1 is a schematic diagram of a conventional magnetic memory cell;
FIG. 2 is a schematic diagram of a magnetic memory cell according to an embodiment of the present invention;
FIG. 3 is a schematic diagram of a magnetic storage cell in accordance with another embodiment of the present invention;
FIG. 4 is a graph of current versus time for a magnetic memory cell of the present invention during a write operation;
FIG. 5 is a schematic diagram of the states of the magnetic memory cell of the present invention for writing (0);
FIG. 6 is a diagram illustrating the states of the magnetic memory cell write (1) of the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
An embodiment of the present invention provides a magnetic memory cell, as shown in fig. 2, including: the stacked structure 13 comprises a reference layer 131, a barrier layer 132, a free layer 133, a nonmagnetic isolation layer 134 and a phase change layer 135 which are sequentially stacked from bottom to top, wherein the reference layer 131, the barrier layer 132 and the free layer 133 form a Magnetic Tunnel Junction (MTJ) for storing data, the phase change layer 135 changes between an anti-ferromagnetic phase and a ferromagnetic phase, and when the phase change layer 135 is in the ferromagnetic phase, a bias magnetic field is provided for the free layer 133, so that the magnetization direction of the free layer 133 deviates from a direction collinear with the magnetization direction of the reference layer 131.
Specifically, the phase change characteristics of phase change layer 135 are temperature dependent, and the temperature at which the phase change occurs is referred to as the phase change temperature, and when the temperature is lower than the phase change temperature, phase change layer 135 is an anti-ferromagnetic phase, and when the temperature is higher than the phase change temperature, phase change layer 135 is a ferromagnetic phase, and thus phase change layer 135 may also be referred to as a thermally induced phase change layer.
The phase change layer 135 is made of FeRh alloy, or doped elements X are added into the FeRh alloy and marked as FeRhX, wherein the doped elements X are any one or combination of any more of Ir, Pt, V, Mn, Au, Co and Ni, Rh atoms account for 40-60% of the total number of atoms, and X atoms account for 0-15% of the total number of atoms. Experiments show that the phase change temperature of the phase change layer 135 is related to the type and the percentage of the total number of atoms occupied by the doping element X, and when the doping element X is different or the proportion of the doping element X is different, the phase change temperature of FeRhX is obviously different, so that the large-range regulation and control of the phase change temperature of FeRhX can be realized by adjusting the type and the proportion of the doping element X, and the working requirements of the device at different temperatures can be favorably met. Generally, the phase change temperature of phase change layer 135 is between 50 ℃ and 200 ℃.
The material of nonmagnetic spacer layer 134 includes a mixture of one or more of MgO, Cu, Au, Al, Ta, Ag, Mo, Ir, and W. The free layer 133 and the phase change layer 135 are separated by a nonmagnetic spacer layer 134 to eliminate magnetic coupling therebetween.
The material of the free layer 133 and the reference layer 131 includes any one of Co, Fe, Ni, CoB, FeB, NiB, CoFe, NiFe, CoNi, and CoFeB.
The barrier layer 132 is an insulating layer made of MgO or HfO 2 、AlO x And TaO x Any one of them.
The magnetic memory cell of the present invention is not limited to the above implementation form, and another embodiment of the present invention further provides a magnetic memory cell, as shown in fig. 3, including: the multilayer structure comprises a bottom electrode 21, a top electrode 22 and a laminated structure 23 positioned between the bottom electrode 21 and the top electrode 22, wherein the laminated structure 23 comprises a pinning layer 231, a coupling layer 232, a reference layer 233, a barrier layer 234, a free layer 235, a nonmagnetic isolating layer 236 and a phase change layer 237 which are sequentially stacked from bottom to top, and the reference layer 233, the coupling layer 232 and the pinning layer 231 form a synthetic antiferromagnetic structure. The synthetic antiferromagnetic structure is beneficial for reducing the effect of stray fields on the magnetization switching of the free layer 235. The coupling layer 232 is one of Ru, Ir, Rh, Ti, and Ta, and the pinning layer 231 is a magnetic single layer film or a multi-layer film structure having a large anisotropy. The reference layer 233 and the pinned layer 231 are interlayer antiferromagnetically coupled through the coupling layer 232 such that the magnetization direction of the reference layer 233 is fixed due to the coupling with the pinned layer 231. As for the reference layer 233, the barrier layer 234, the free layer 235, the nonmagnetic spacer layer 236 and the phase change layer 237, the composition materials and characteristics of each layer are the same as those in the above-mentioned embodiments, and will not be described again.
In addition, in the magnetic memory cell structures in the two embodiments, the order of the stacked structure between the bottom electrode and the top electrode can be reversed, and the memory cell function is not changed in principle. In addition, as for the structure of the free layer, the free layer may be a single layer structure, or a sandwich structure of "ferromagnetic layer 1/intercalation/ferromagnetic layer 2" such as CoFeB/Ta/CoFeB may be used. The thickness of the intercalation layer in the sandwich structure is less than 1 nanometer, so that strong interlayer ferromagnetic coupling exists between the ferromagnetic layer 1 and the ferromagnetic layer 2 in the sandwich structure, and the magnetic moment can be synchronously turned. The intercalation layer can be one or more of Mo, W, Ta, Al, Nd, B and C, and the ferromagnetic layer in the sandwich structure can be one or more of Fe, Co, Ni, FeB, CoB, NiB, CoFe, NiFe, CoFeB and the like.
The magnetic storage unit provided by the invention adopts a heat-assisted method to write data. Firstly, pulse heating current is introduced, the phase change layer generates antiferromagnetic-ferromagnetic phase change due to temperature rise, on one hand, the phase change layer of the ferromagnetic phase can generate an equivalent bias field, and the equivalent bias field acts on the free layer, so that the magnetic moment of the free layer deviates from the initial direction, and the initial spin transfer torque is increased; on the other hand, during writing, the phase change layer contributes additional assist torque due to the scattering effect on spin-polarized electrons, resulting in a decrease in the critical switching current of the free layer. In addition, the volume expansion of the phase change layer after phase transformation also reduces the magnetic anisotropy of the free layer, so that the magnetic moment is easier to flip. Therefore, compared with the prior art, the magnetic storage unit has the advantages that the critical switching current of the free layer is reduced due to the addition of the phase change layer, so that the writing current is reduced, the probability of breakdown of the MTJ barrier layer is reduced, and the device is protected.
To make the scheme clearer, the writing process of the magnetic memory cell is described in detail below. The writing process can be divided into two phases:
(1) a heating stage: before writing data, firstly, pulse heating current I is introduced into the memory cell 1 Raising the temperature of MTJ and phase change layer for a time t 1 (ii) a Based on the heat conduction formula, on the premise of knowing the MTJ size and the heating pulse current, the purpose of controlling the MTJ and phase change layer temperature can be achieved by controlling the duration of the heating pulse current.
(2) A writing stage: a pulse write current I is led into the memory cell 2 Duration t of time 2 The magnetic moment of the free layer is turned over under the action of writing current; wherein, I 2 Is greater than I 1 ，t 1 And t 2 Between 1 and 100 nanoseconds, and t 1 Greater than t 2 。
After writing data, the current is removed, the current is reduced to zero, and the temperature of the memory cell is reduced. The current-time (I-t) curve of the writing process can be referred to fig. 4.
Taking the magnetic memory cell shown in FIG. 2 as an example, the processes of writing (0) and writing (1) will be described separately.
Referring to fig. 5, a process of writing (0) to the magnetic memory cell may be performed, where fig. 5 omits a bottom electrode and a top electrode, an initial state of the magnetic memory cell is shown as (a) in fig. 5, and before data is written, a magnetization direction of a free layer of the MTJ is antiparallel to a magnetization direction of a reference layer and is in a high resistance state (1), where a temperature is lower than a phase transition temperature, so that the phase transition layer is in an antiferromagnetic phase. The state of the magnetic memory cell during writing is shown in fig. 5 (b), wherein during writing, a pulse heating current is firstly applied, and the phase change layer reaches the phase change temperature and then is transformed from the anti-ferromagnetic phase to the ferromagnetic phase. The equivalent bias field generated by the phase change layer causes the magnetic moment of the free layer to deviate from the initial direction; then, a pulse write current flowing from the free layer to the reference layer is introduced, and the current becomes a spin-polarized current after passing through the reference layer. Since the free layer and reference layer magnetizations are not collinear, the initial spin-transfer torque increases and the initial delay weakens. The electrons scattered back by the phase change layer can contribute to extra spin transfer torque, so that the magnetization switching efficiency is improved, and the critical switching current is reduced. Wherein the dashed arrows indicate electron motion trajectories. The final state of the magnetic memory cell is shown in FIG. 5 (c), after writing data, the free layer of the MTJ is parallel to the magnetization direction of the reference layer and assumes the low resistance state (0), at which point the phase change layer returns to the anti-ferromagnetic phase.
Referring to fig. 6, the process of writing (1) into the magnetic memory cell may be referred to, and fig. 6 omits the bottom electrode and the top electrode, and the initial state of the magnetic memory cell is as shown in fig. 6 (a), and before writing data, the magnetization direction of the MTJ free layer is parallel to the magnetization direction of the reference layer, and the MTJ free layer is in a low resistance state (0), and at this time, the temperature is lower than the phase transition temperature, and thus the phase transition layer is in an anti-ferromagnetic phase. The state of the magnetic memory cell during writing is shown in fig. 6 (b), in which a pulse heating current is first applied to the phase change layer to reach the phase change temperature, and then the phase change layer is transformed from the anti-ferromagnetic phase to the ferromagnetic phase. And then pulse write current flowing from the reference layer to the free layer is introduced, the current becomes spin polarization current after passing through the phase change layer, and the generated spin transfer torque enables the magnetization direction of the free layer to deviate from the direction collinear with the reference layer, so that the initial spin transfer torque is large, and the initial delay is weakened. The free layer magnetic moment can be switched at a small current because electrons flowing through the phase change layer contribute additional spin transfer torque. Wherein the dashed arrows indicate electron motion trajectories. The final state of the magnetic memory cell is shown in fig. 6 (c), where after data is written, the magnetization direction of the free layer of the MTJ is antiparallel to the magnetization direction of the reference layer and assumes a high resistance state (1), at which point the phase change layer returns to the antiferromagnetic phase.
On the other hand, based on the magnetic storage unit in the above embodiments, an embodiment of the present invention further provides a magnetic memory, including the above magnetic storage unit.
The above description is only for the specific embodiments of the present invention, but the scope of the present invention is not limited thereto, and any changes or substitutions that can be easily conceived by those skilled in the art within the technical scope of the present invention are also within the scope of the present invention. Therefore, the protection scope of the present invention should be subject to the protection scope of the claims.
Claims (10)
1. A magnetic memory cell, comprising: the phase change structure comprises a reference layer, a barrier layer, a free layer, a nonmagnetic isolation layer and a phase change layer which are sequentially stacked, wherein the phase change layer changes between an antiferromagnet phase and a ferromagnetic phase according to a phase change temperature, and when the phase change layer is in the ferromagnetic phase, a bias magnetic field is provided for the free layer and acts on the free layer to enable the magnetization direction of the free layer to deviate from the direction which is collinear with the magnetization direction of the reference layer; the nonmagnetic isolating layer is used for preventing the phase change layer and the free layer from generating magnetic coupling.
2. The magnetic memory cell of claim 1, wherein the phase change layer is an anti-ferromagnetic phase when the temperature is below the phase transition temperature and a ferromagnetic phase when the temperature is above the phase transition temperature.
3. The magnetic memory cell of claim 1, wherein the phase change layer is made of FeRhX, and X is any one or a combination of any more of Ir, Pt, V, Mn, Au, Co and Ni, wherein Rh accounts for 40-60% of the total number of atoms, and X accounts for 0-15% of the total number of atoms.
4. The magnetic memory cell of claim 1, wherein the phase change temperature of the phase change layer is between 50 ℃ and 200 ℃.
5. The magnetic memory cell of claim 1, wherein the material of the nonmagnetic spacer layer is a mixture of one or more of MgO, Cu, Au, Al, Ta, Ag, Mo, Ir, and W.
6. The magnetic memory cell of claim 1 wherein the material of the free layer and the reference layer is any one of Co, Fe, Ni, CoB, FeB, NiB, CoFe, NiFe, CoNi, and CoFeB.
7. The magnetic memory cell of claim 1 wherein the barrier layer is MgO, HfO 2 、AlO x And TaO x Any one of them.
8. The magnetic memory cell of claim 1, wherein the stacked structure further comprises: the coupling layer is positioned on one side surface of the reference layer far away from the barrier layer, the pinning layer is positioned on one side surface of the coupling layer far away from the reference layer, and the reference layer, the coupling layer and the pinning layer form a synthetic antiferromagnetic structure for reducing the influence of stray fields on magnetization switching of the free layer.
9. The magnetic memory cell of claim 8 wherein the coupling layer is one of Ru, Ir, Rh, Ti and Ta and the pinning layer is a magnetic single layer film or a multi-layer film structure with a large anisotropy.
10. A magnetic memory comprising a magnetic memory cell according to any of claims 1 to 9.
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| CN115188881A (en) * | 2022-04-12 | 2022-10-14 | 中国科学院微电子研究所 | Neural component and neural network device based on magnetic tunnel junction |
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| CN107958953A (en) * | 2016-10-14 | 2018-04-24 | 中电海康集团有限公司 | The preparation method of the free layer of magnetic tunnel junction and the preparation method of magnetic tunnel junction |
| CN108428790A (en) * | 2018-03-21 | 2018-08-21 | 北京工业大学 | Action of ultraviolet laser realizes the method that magneto-optic couples compound storage in " magnetic material/GeSbTe/ substrates " heterojunction structure |
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| US8058697B2 (en) * | 2007-03-26 | 2011-11-15 | Magic Technologies, Inc. | Spin transfer MRAM device with novel magnetic synthetic free layer |
| US8054677B2 (en) * | 2008-08-07 | 2011-11-08 | Seagate Technology Llc | Magnetic memory with strain-assisted exchange coupling switch |
| US7929370B2 (en) * | 2008-11-24 | 2011-04-19 | Magic Technologies, Inc. | Spin momentum transfer MRAM design |
| US9171601B2 (en) * | 2009-07-08 | 2015-10-27 | Alexander Mikhailovich Shukh | Scalable magnetic memory cell with reduced write current |
| US9419209B2 (en) * | 2013-12-13 | 2016-08-16 | The Regents Of The University Of California | Magnetic and electrical control of engineered materials |
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| CN107958953A (en) * | 2016-10-14 | 2018-04-24 | 中电海康集团有限公司 | The preparation method of the free layer of magnetic tunnel junction and the preparation method of magnetic tunnel junction |
| CN108428790A (en) * | 2018-03-21 | 2018-08-21 | 北京工业大学 | Action of ultraviolet laser realizes the method that magneto-optic couples compound storage in " magnetic material/GeSbTe/ substrates " heterojunction structure |
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