CN110867511B - Perpendicular magnetized MTJ device - Google Patents
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Abstract
The invention provides a perpendicular magnetization MTJ device, comprising: the MTJ device comprises a thermal stability enhancement layer, a free layer, a tunnel layer and a fixed layer which are sequentially stacked, wherein the ratio of the thickness of the free layer to the diameter of the MTJ device is 0.75-2; the thermal stability enhancement layer has a phase change characteristic, and is an anti-ferromagnetic phase when the temperature is lower than the phase change temperature, and is a ferromagnetic phase when the temperature is higher than the phase change temperature. The invention can reduce the write current of STT-MRAM based on the ultra-small diameter MTJ device.
Description
Technical Field
The invention relates to the technical field of magnetic memories, in particular to a perpendicular magnetization MTJ device.
Background
Perpendicular Magnetic tunnel junction MTJs have the advantages of low write energy and scalability, and have been demonstrated to develop the most suitable magnetization configuration for MRAM (Magnetic Random Access Memory). Recent research finds that the thickness of the free layer is larger than the radius of the MTJ, and the technology can be used for perpendicular magnetization MTJ, and the shape anisotropy of the free layer is utilized to induce the magnetization direction of the free layer to be perpendicular to the film surface, so that a perpendicular magnetization MTJ device is obtained. MTJ devices of this type have an ultra-small diameter, which can be reduced to dimensions of 10nm or less. In order to obtain the ultra-small diameter MTJ device, the thickness of the free layer of the conventional MTJ structure needs to be increased. On the other hand, the STT-MRAM based on the MTJ needs a short high temperature treatment during packaging, the temperature is higher than 250 ℃, and the thermal disturbance is large in the process. In order to avoid data loss, the thickness of the free layer of the conventional MTJ structure also needs to be increased.
In the process of implementing the invention, the inventor finds that at least the following technical problems exist in the prior art:
because the thickness of the free layer is increased by the ultra-small diameter MTJ, the STT-MRAM writing current and voltage based on the ultra-small diameter MTJ are further increased, so that the power consumption is increased, the MTJ breakdown is easily caused, and the erasable frequency is reduced.
Disclosure of Invention
To solve the above problems, the present invention provides a perpendicular magnetization MTJ device capable of reducing the write current of STT-MRAM based on ultra small diameter MTJ devices.
The invention provides a perpendicular magnetization MTJ device, comprising: a thermally stable enhancement layer, a free layer, a tunnel layer, and a pinned layer, which are sequentially stacked, wherein,
the ratio of the thickness of the free layer to the diameter of the MTJ device is 0.75-2;
the thermal stability enhancement layer has a phase change characteristic, and is an anti-ferromagnetic phase when the temperature is lower than the phase change temperature, and is a ferromagnetic phase when the temperature is higher than the phase change temperature.
Optionally, the phase transition temperature of the thermal stabilization enhancement layer is 50-250 ℃.
Optionally, the ratio of the thickness of the thermal stability enhancement layer to the diameter of the MTJ device is 0.5-1.3.
Optionally, the material of the thermal stability enhancing layer is FeRh, wherein Fe atoms and Rh atoms each account for 50% of the total number of atoms.
Optionally, the material of the thermal stability enhancement layer is FeRhX, and X is any one or a combination of any more of Ir, Pt, V, Mn, Au, Co, and Ni, where Rh atoms account for 40% to 60% of the total number of atoms, and X accounts for 0 to 15% of the total number of atoms.
Optionally, the material of the free layer is any one of Co, Fe, Ni, CoB, FeB, NiB, CoFe, NiFe, CoNi, and CoFeB.
Optionally, the material of the tunnel layer is MgO or HfO2MgAlO and AlOx(wherein x is 1.2 to 1.7), and the thickness of the tunnel layer is 0.4 to 1.2 nm.
Optionally, the fixed layer includes a reference magnetic layer and a synthetic antiferromagnetic pinning layer, wherein the reference magnetic layer is made of any one of Co, Fe, Ni, CoB, FeB, NiB, CoFe, NiFe, CoNi and CoFeB, the synthetic antiferromagnetic pinning layer adopts a Co/Pt multilayer film structure or a Co/Pd multilayer film structure, the Co/Pt multilayer film structure or the Co/Pd multilayer film structure further includes a coupling layer, the coupling layer is located in an intermediate layer of the multilayer film structure, and the coupling layer is made of Ru, Ir or Cr.
Optionally, the method further comprises: and the connecting layer is positioned between the free layer and the thermal stability enhancement layer and used for increasing the interlayer exchange coupling of the magnetic moment of the free layer and the magnetic moment of the thermal stability enhancement layer.
Optionally, the material of the connection layer is any one or combination of any more of Cu, Cr, V, Ag, Au, Mo, Ir, Ru, Pd, W, Ta and Nd, and the thickness of the connection layer is less than 0.8 nm.
The invention provides a perpendicular magnetization MTJ device, wherein a thermal stability enhancement layer with phase change property is superposed on the surface of a free layer, when the temperature is lower than the phase change temperature, the thermal stability enhancement layer is an anti-ferromagnetic phase so as to enable the free layer to be under the action of a horizontal bias field, so that part of magnetic moment deviates from the perpendicular magnetization direction, and when the temperature is higher than the phase change temperature, the thermal stability enhancement layer is a ferromagnetic phase and forms ferromagnetic coupling with the free layer so as to increase the effective thickness of the free layer. Compared with the prior art, the write-in current of the STT-MRAM at low temperature is reduced, the power supply capacity requirement of the selection tube is further reduced, the size of the selection tube is reduced, meanwhile, the thermal stability of the MTJ device at high temperature is enhanced, the non-volatility of stored information is ensured, and the read disturbance at high temperature is reduced. In addition, the initial spin transfer torque STT at room temperature is larger, and the magnetization switching speed of the free layer is also accelerated.
Drawings
FIG. 1 is a schematic diagram of the structure of one embodiment of a perpendicular magnetized MTJ device of the present invention;
FIG. 2a is a schematic diagram of the magnetization state of the MTJ device of FIG. 1 when the temperature is below the phase transition temperature of the thermal stability enhancement layer;
FIG. 2b is a schematic diagram of the magnetization state of the MTJ device of FIG. 1 when the temperature is above the phase transition temperature of the thermal stability enhancement layer;
FIG. 3 is a graph showing the effect of comparing the reduced energy barrier height Δ of the perpendicular-magnetized MTJ device of the present invention with that of the prior MTJ device;
FIG. 4 is a schematic diagram of another embodiment of a perpendicular magnetized MTJ device of the present invention.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
The embodiment of the invention provides a perpendicular magnetization MTJ device, which has an ultra-small diameter, and the diameter D of the MTJ device is 5-30 nm, as shown in FIG. 1, and comprises: the MTJ device comprises a thermal stability enhancement layer, a free layer, a tunnel layer and a fixed layer which are sequentially stacked from top to bottom, wherein the diameters of all the layers are the same, the diameter D of the MTJ device is equal to the diameter of each layer, and the thickness t of the free layer is1Greater than or near the MTJ device diameter D, typically taken at the thickness t of the free layer1The ratio of the diameter D of the MTJ device to the diameter D of the MTJ device is 0.75-2, and the shape anisotropy of the free layer is utilized to induce the magnetization direction of the free layer to be perpendicular to the film surface; thickness t of the thermally stable reinforcing layer2The ratio of the diameter D of the MTJ device to the diameter D of the MTJ device is 0.5-1.3, the thermal stability enhancement layer has a phase change property, the thermal stability enhancement layer is an anti-ferromagnetic phase when the temperature is lower than the phase change temperature so that the magnetic moment of the free layer is deflected, and the thermal stability enhancement layer is a ferromagnetic phase when the temperature is higher than the phase change temperature so that the effective thickness of the free layer is increased.
The perpendicular magnetization MTJ device of the embodiment of the invention utilizes the phase change characteristic of the thermal stability enhancement layer to reduce the write current of STT-MRAM based on the ultra-small diameter MTJ device. The following is a detailed description:
the phase transition temperature of the thermally stable reinforcing layer is denoted T0，T0Is 50-250 ℃ and is lower than the phase transition temperature T0In the meantime, as shown in fig. 2a, the thermal stabilization enhancement layer is an antiferromagnetic phase, and magnetic moments of the thermal stabilization enhancement layer are arranged in an in-plane antiferromagnetic manner, so that an exchange bias effect occurs at an interface between the free layer and the thermal stabilization enhancement layer, and under the action of an exchange bias magnetic field, the magnetic moment of the free layer at the interface deviates from a perpendicular magnetization direction, thereby driving the magnetic moment far away from the interfaceThe magnetic moment of the free layer is deflected at a small angle, so that the initial spin transfer torque STT is increased, and the switching current is reduced, namely the writing current of the STT-MRAM is reduced; when the temperature exceeds the phase transition temperature T0In the meantime, as shown in fig. 2b, the thermal stabilization enhancement layer is a ferromagnetic phase, and magnetic moments of the thermal stabilization enhancement layer are arranged in a ferromagnetic manner, because the magnetic moments of the thermal stabilization enhancement layer and the free layer are in exchange coupling at an interface, the magnetic moments of the thermal stabilization enhancement layer are arranged perpendicular to the film surface, and at this time, the whole of the thermal stabilization enhancement layer and the free layer can be regarded as a new free layer, which is equivalent to increase the effective thickness of the free layer, and the thermal stability of the MTJ device is in direct proportion to the thickness of the free layer, so that the thermal stability of the MTJ device is enhanced at high temperature.
It should be noted that, as a nonvolatile Memory, one core index of MRAM (Magnetic Random Access Memory) is data retention time, which depends on the barrier height between two states in the Magnetic tunnel junction MTJ. According to the theory of relevance, the data retention time of a single bit (bit) can be expressed as:
τ＝τ0expΔ＝τ0exp(E/kBT)
wherein, tau0For characteristic time, E is the energy barrier height, kBBoltzmann constant, T is temperature, and Δ is the reduced energy barrier height.
It can be seen that, as the temperature increases, the reduced energy barrier height Δ decreases and the thermal stability decreases, so that the data retention time is defined according to the highest ambient temperature of the chip operation, and it is necessary to ensure the thermal stability of the MTJ device at high temperature.
Comparing the MTJ device with the conventional MTJ device, the graph of the effect of comparing the reduced energy barrier height Δ with the temperature change relationship is shown in fig. 3, where fig. 3 illustrates an example of Δ minimum requirement 60 at 260 ℃, and in order to achieve this index, the conventional MTJ device needs to have Δ >122 at 0 ℃; if the thickness of the thermal stability enhancement layer is 0.75 times that of the free layer, Ms (saturation magnetization) is consistent with that of the free layer, the phase transition temperature of the thermal stability enhancement layer is 100 ℃, and the thermal stability factor at 0 ℃ corresponding to the MTJ device can be optimized to be delta 83 due to the fact that the thermal stability factor is suddenly increased at the phase transition temperature. Since the thermal stability factor at 0 ℃ is provided entirely by the free layer in both structures, the thickness of the free layer required by the present invention is only about 2/3 of the thickness of the free layer of the prior MTJ device. The writing current is approximately proportional to the thickness of the free layer, and the invention can also make the magnetic moment of the free layer generate small angle deflection, so the writing current can be greatly reduced under the combined action of the two factors.
Through the analysis, the perpendicular magnetization MTJ device of the embodiment of the invention reduces the write-in current of the STT-MRAM at low temperature under the action of the thermal stability enhancement layer, thereby reducing the power supply capacity requirement on the selection tube, reducing the size of the selection tube, simultaneously enhancing the thermal stability of the MTJ device at high temperature, ensuring the non-volatility of stored information and reducing the read disturbance at high temperature. In addition, the initial spin transfer torque STT at room temperature is larger, and the magnetization switching speed of the free layer is also accelerated. The perpendicular magnetization MTJ device of the embodiments of the invention has great application advantages.
Further, the materials and thicknesses of the layers of the perpendicular magnetization MTJ device will be described in detail.
The material of the thermal stability enhancement layer can be FeRh, wherein Fe atoms and Rh atoms respectively account for 50% of the total number of atoms, or FeRhX, wherein X is any one or combination of any more of Ir, Pt, V, Mn, Au, Co and Ni, wherein the total number of atoms occupied by Rh atoms is 40% -60%, and the total number of atoms occupied by X is 0-15%.
The free layer is made of any one of Co, Fe, Ni, CoB, FeB, NiB, CoFe, NiFe, CoNi and CoFeB, optionally, the free layer has 1 or more insertion layers, and the insertion layers are made of nonmagnetic metal such as one of Mo, Ru, Ta, Pt and W.
The tunnel layer is used as an insulating layer and is made of MgO and HfO2MgAlO and AlOx(wherein x is 1.2 to 1.7) and the thickness is 0.4 to 1.2 nm.
The fixed layer comprises a reference magnetic layer and a synthetic antiferromagnetic pinning layer, wherein the reference magnetic layer is made of any one of Co, Fe, Ni, CoB, FeB, NiB, CoFe, NiFe, CoNi and CoFeB, the synthetic antiferromagnetic pinning layer adopts a Co/Pt multilayer film structure or a Co/Pd multilayer film structure, the Co/Pt multilayer film structure or the Co/Pd multilayer film structure further comprises a coupling layer, the coupling layer is located in the middle layer of the multilayer film structure, and the coupling layer is made of Ru, Ir or Cr.
For clarity and intuition, two specific structural examples of the perpendicular magnetization MTJ device of the present invention are listed, and the materials and thicknesses of the respective layers are explained.
Example one:
the MTJ device with perpendicular magnetization comprises a thermal stability enhancement layer, a free layer, a tunnel layer and a fixed layer from top to bottom in sequence, wherein the diameter D of the MTJ device is 10nm, and the thermal stability enhancement layer is made of Fe0.5Rh0.5Fe atoms and Rh atoms each accounted for 50% of the total number of atoms, and had a thickness of 9 nm; the material of the free layer is FeB, and the thickness of the free layer is 14 nm; the material of the tunnel layer is HfO2The thickness of the film is 0.6 nm; the fixed layer comprises a reference magnetic layer made of CoFe with a thickness of 2nm and a synthetic antiferromagnetic pinning layer having a structure of [ Pd (0.6)/Co (0.4) ]]8/Ir(0.4)/[Co(0.4)/Pd(0.6)]4Multilayer film structures, the values in the small brackets representing the corresponding film thickness in nm, and the values outside the middle brackets, e.g. 8,4, representing the number of repetitions of the structure, i.e. the Pd (0.6)/Co (0.4) structure is repeated 8 times, followed by a further layer of Ir (0.4) followed by a repetition of the Co (0.4)/Pd (0.6) structure 4 times, wherein Ir (0.4) is the coupling layer.
Example two:
the MTJ device with perpendicular magnetization comprises a thermal stability enhancement layer, a free layer, a tunnel layer and a fixed layer from top to bottom in sequence, the diameter D of the MTJ device is 12nm, and the material of the thermal stability enhancement layer is Fe0.5Rh0.45Pt0.05Fe atoms account for 50% of the total number of atoms, Rh atoms account for 45% of the total number of atoms, Pt atoms account for 5% of the total number of atoms, and the thickness thereof is 10 nm; the free layer is made of CoFeB, and the thickness of the free layer is 16 nm; the tunnel layer is made of MgO, and the thickness of the tunnel layer is 0.8 nm; the fixed layer comprises a reference magnetic layer and a synthetic antiferromagnetic pinning layer, wherein the reference magnetic layer is made of CoFeB and has a thickness of 2nmThe synthetic antiferromagnetic pinning layer has the structure of [ Pt (0.4)/Co (0.4)]4/Ru(0.4)/[Co(0.4)/Pt(0.4)]2Multilayer film structures, the values in the small brackets representing the corresponding film thickness in nm, and the values outside the middle brackets, e.g. 4,2, representing the number of times the structure is repeated, i.e. the Pt (0.4)/Co (0.4) structure is repeated 4 times, followed by a layer of Ru (0.4) followed by a layer of Co (0.4)/Pt (0.4) structure repeated 2 times, with Ru (0.4) being the coupling layer.
Optionally, on the basis of the schematic structural diagram of the perpendicular magnetization MTJ device shown in fig. 1, as shown in fig. 4, the MTJ device further includes: the connecting layer is arranged between the thermal stability enhancement layer and the free layer, and strong interlayer exchange coupling between the free layer magnetic moment and the thermal stability enhancement layer magnetic moment can be guaranteed through the connecting layer. The material of the connecting layer can be any one or combination of any more of Cu, Cr, V, Ag, Au, Mo, Ir, Ru, Pd, W, Ta and Nd, and the thickness of the connecting layer is less than 0.8 nm.
It should be noted that, in the above embodiment, the material stacking manner of the MTJ device adopts a stacking manner of the thermal stability enhancement layer, the free layer, the tunnel layer, and the fixed layer from top to bottom, but in practical application, the material stacking manner of the MTJ device may also be reversed according to design requirements, that is, the material stacking manner of the thermal stability enhancement layer, the free layer, the tunnel layer, and the fixed layer from bottom to top is adopted, and this structure may also achieve the same technical effect, and is not described herein again.
The above description is only for the specific embodiment of the present invention, but the scope of the present invention is not limited thereto, and any changes or substitutions that can be easily conceived by those skilled in the art within the technical scope of the present invention are included in the scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the protection scope of the claims.
Claims (10)
1. A perpendicularly magnetized MTJ device, comprising: a thermally stable enhancement layer, a free layer, a tunnel layer, and a pinned layer, which are sequentially stacked, wherein,
the ratio of the thickness of the free layer to the diameter of the MTJ device is 0.75-2;
the thermal stability enhancement layer has a phase transition characteristic, when the temperature is lower than the phase transition temperature, the thermal stability enhancement layer is an antiferromagnet phase, and when the temperature is higher than the phase transition temperature, the thermal stability enhancement layer is a ferromagnetic phase, and the magnetic moment of the thermal stability enhancement layer of the ferromagnetic phase and the magnetic moment of the free layer are in exchange coupling at an interface, so that the magnetic moments of the thermal stability enhancement layer are arranged perpendicular to the film surface, and the effective thickness of the free layer is increased.
2. The perpendicular magnetized MTJ device of claim 1, wherein the phase transition temperature of the thermal stability enhancement layer is 50-250 ℃.
3. The perpendicular magnetized MTJ device of claim 1, wherein a ratio of a thickness of the thermal stability enhancement layer to a diameter of the MTJ device is 0.5-1.3.
4. The perpendicular magnetized MTJ device of claim 1, the material of the thermal stability enhancement layer being ferah, wherein Fe and Rh atoms each comprise 50% of the total number of atoms.
5. The perpendicular magnetization MTJ device of claim 1, wherein the material of the thermal stability enhancement layer is FeRhX, and X is any one or a combination of any more of Ir, Pt, V, Mn, Au, Co, and Ni, wherein Rh accounts for 40-60% of the total atomic number, and X accounts for 0-15% of the total atomic number.
6. The perpendicular magnetized MTJ device of claim 1, wherein the material of the free layer is any one of Co, Fe, Ni, CoB, FeB, NiB, CoFe, NiFe, CoNi, and CoFeB.
7. The perpendicular magnetized MTJ device of claim 1, wherein the material of the tunneling layer is MgO, HfO2MgAlO and AlOxWherein x is 1.2 ℃ -1.7, the thickness of the tunnel layer is 0.4-1.2 nm.
8. The perpendicular magnetization MTJ device of claim 1, wherein the fixed layer comprises a reference magnetic layer and a synthetic antiferromagnetic pinning layer, wherein the reference magnetic layer is made of any one of Co, Fe, Ni, CoB, FeB, NiB, CoFe, NiFe, CoNi, and CoFeB, the synthetic antiferromagnetic pinning layer adopts a Co/Pt multilayer film structure or a Co/Pd multilayer film structure, the Co/Pt multilayer film structure or the Co/Pd multilayer film structure further comprises a coupling layer located in an intermediate layer of the multilayer film structure, and the coupling layer is made of Ru, Ir, or Cr.
9. The perpendicular magnetized MTJ device of any of claims 1 to 8, further comprising: and the connecting layer is positioned between the free layer and the thermal stability enhancement layer and used for increasing the interlayer exchange coupling of the magnetic moment of the free layer and the magnetic moment of the thermal stability enhancement layer.
10. The perpendicular magnetization MTJ device of claim 9, wherein the material of the connection layer is any one or a combination of any more of Cu, Cr, V, Ag, Au, Mo, Ir, Ru, Pd, W, Ta, and Nd, and the connection layer has a thickness of less than 0.8 nm.
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| US7372116B2 (en) * | 2004-06-16 | 2008-05-13 | Hitachi Global Storage Technologies Netherlands B.V. | Heat assisted switching in an MRAM cell utilizing the antiferromagnetic to ferromagnetic transition in FeRh |
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