CN109065636A - A kind of drift step recovery diode - Google Patents
A kind of drift step recovery diode Download PDFInfo
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- CN109065636A CN109065636A CN201810962364.6A CN201810962364A CN109065636A CN 109065636 A CN109065636 A CN 109065636A CN 201810962364 A CN201810962364 A CN 201810962364A CN 109065636 A CN109065636 A CN 109065636A
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- recovery diode
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- step recovery
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- 238000011084 recovery Methods 0.000 title claims abstract description 25
- 238000009825 accumulation Methods 0.000 claims description 5
- 238000005086 pumping Methods 0.000 abstract description 15
- 238000000605 extraction Methods 0.000 abstract description 13
- 238000000034 method Methods 0.000 abstract description 8
- 239000004065 semiconductor Substances 0.000 abstract description 3
- 238000005516 engineering process Methods 0.000 abstract description 2
- 238000010586 diagram Methods 0.000 description 4
- 239000000284 extract Substances 0.000 description 4
- 230000001413 cellular effect Effects 0.000 description 3
- 230000005611 electricity Effects 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 210000001367 artery Anatomy 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000004146 energy storage Methods 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 210000003462 vein Anatomy 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000009194 climbing Effects 0.000 description 1
- 230000002596 correlated effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 238000000053 physical method Methods 0.000 description 1
- 238000004080 punching Methods 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/868—PIN diodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
- H01L29/063—Reduced surface field [RESURF] pn-junction structures
- H01L29/0634—Multiple reduced surface field (multi-RESURF) structures, e.g. double RESURF, charge compensation, cool, superjunction (SJ), 3D-RESURF, composite buffer (CB) structures
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- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
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- Electrodes Of Semiconductors (AREA)
Abstract
The present invention relates to power semiconductor technologies, in particular to a kind of drift step recovery diode.The present invention is to conventional p+‑p‑n0‑n+The pressure-resistant base area of drift step recovery diode is transformed, by by the n of Uniform Doped0Super-junction structure is changed into base area, that is superjunction pressure resistance base area 3, path is extracted to change carrier of the drift step recovery diode in the backward pumping stage of pulsed discharge, vertical and horizontal are made to can be carried out the extraction of carrier, greatly reduce the average moving distance of minority carrier, to accelerate the extraction speed of minority carrier, so that the time in backward pumping stage reduces, the voltage change ratio in the voltage pulse forward position formed in the load in pulse discharge loop is bigger, the time is shorter.Superjunction base region structure of the invention is using conventional superjunction technique, without additionally developing new process.
Description
Technical field
The present invention relates to a kind of semiconductor switch diode, in particular to a kind of drift step recovery diode.
Background technique
Drift step recovery diode (Drift step recovery diodes, abbreviation DSRD) is that a kind of semiconductor is opened
Diode is closed, is proposed by Russian Ioffe physical technique research institute, ultra wide band (Ultra Wide Band, letter are generally used for
Claim UWB) in system, used in a variety of pulse signal sources as Primary Component, it can achieve opening for nanosecond even picosecond
The time is closed, and has the characteristics that high-peak power, high pulse repetition frequency and high time stability,
DSRD device generally has following several technology paths, respectively p+-n0-n+Type DSRD device, p+-p0-n+Type DSRD
Device and p+-p-n0-n+Type DSRD device.p+-p-n0-n+Type DSRD device is a kind of current stage more commonly used scheme,
There are two the stages for the groundwork process of its pulse-generating circuit: forward pumping stage and backward pumping stage.In DSRD device
When forward pumping stage in pulsed discharge, the minority carrier inside forward current injection device is respectively stored in p-type load
It flows in sub- accumulation layer and N-type base area；When DSRD device is in the backward pumping stage of pulsed discharge, stored in DSRD device
Minority carrier be extracted, form reverse current, and in the reverse current decline stage, the electric current in energy storage original part is transferred to
On load resistance, to form voltage pulse on load resistance, i.e. the extraction speed of minority carrier determines pulse system
Leading-edge pulse time, voltage build-up rate and the voltage peak in the voltage pulse forward position of output.
For single silicon substrate DSRD device, in several kilovolts even tens kilovolts of nanosecond pulse system, due to drift
It is very big to move area's thickness, has been unable to satisfy the time requirement of pulse front edge, multiple devices in series is needed to use, this greatly increases
The volume of system.Mainly there is two o'clock for the direction of silicon substrate DSRD device optimization, i.e., to the greatest extent in same drift region thickness
Amount increases device pressure resistance and the carrier in backward pumping stage extracts speed, to reduce the quantity of devices in series, reduces system
Volume.
Summary of the invention
The technical problem to be solved by the present invention is to the internal structures by changing drift step recovery diode, increase device
Pressure resistance accelerates carrier to extract speed, not only can solve single DSRD device applied to electricity present in action of low-voltage pulse system
The problem that leading-edge pulse time is long, voltage pulse peak value is low, drift step recovery diode power consumption is big is pressed, high pressure can also be reduced
The quantity of series-parallel DSRD device in pulse system, to reduce the volume of system.
Technical solution of the present invention: a kind of drift step recovery diode, as shown in Fig. 2, a kind of drift step recovery two
Pole pipe, structure cell are respectively including N-type Ohm contact electrode 1, N-type heavy doping cathodic region 2, superjunction pressure resistance base from bottom to top
Area 3, p-type plasma accumulation layer 4, p-type heavy doping anode 5, p-type Ohm contact electrode 6；Superjunction pressure resistance base area 3 includes N-
Column area 31 and P- column area 32.
The solution of the present invention, compared to conventional p+-p-n0-n+Drift step recovery diode, drift step of the invention
The pressure-resistant base area of recovery diode uses super-junction structure.
Beneficial effects of the present invention are that the present invention is to conventional p+-p-n0-n+The pressure-resistant base area of drift step recovery diode
It is transformed, by by the n of Uniform Doped0Super-junction structure, i.e. superjunction pressure resistance base area 3 are changed into base area, to change drift
The carrier that step-recovery diode is moved in the backward pumping stage of pulsed discharge extracts path, makes vertical and horizontal can be into
The extraction of row carrier, greatly reduces the average moving distance of minority carrier, to accelerate the extraction of minority carrier
Speed, so that the time in backward pumping stage reduces, the electricity in the voltage pulse forward position formed in the load in pulse discharge loop
Buckling rate is bigger, the time is shorter.Superjunction base region structure of the invention is new without additionally developing using conventional superjunction technique
Process.
Detailed description of the invention
Fig. 1 is conventional DSRD structure cell schematic diagram；
Fig. 2 is DSRD structure cell schematic diagram of the invention；
Fig. 3 is the DSRD pulse-generating circuit schematic diagram used when emulation；
Fig. 4 is that conventional DSRD and DSRD of the present invention are compared by the voltage pulse waveforms that pulse-generating circuit exports.
Specific embodiment
The present invention is described in detail with reference to the accompanying drawing
As shown in Fig. 2, drift step recovery diode of the invention, structure cell is respectively including N-type from bottom to top
Ohm contact electrode 1, N-type heavy doping cathodic region 2, superjunction pressure resistance base area 3, p-type plasma accumulation layer 4, p-type heavy doping anode 5,
P-type Ohm contact electrode 6；Superjunction pressure resistance base area 3 includes N- column area 31 and P- column area 32；It is characterized in that, compared to normal
The p of rule+-p-n0-n+Drift step recovery diode, the pressure-resistant base area of drift step recovery diode of the invention use super
Junction structure.
As shown in Figure 1, for conventional p+-p-n0-n+Drift step recovery diode.As shown in Fig. 2, being drift of the invention
Move step-recovery diode.The present invention and conventional p+-p-n0-n+The different place of drift step recovery diode structure is,
The present invention is to n0Base area is transformed, by by the n of Uniform Doped0The superjunction pressure resistance base area 3 of super-junction structure is changed into base area,
Extract path to change carrier of the drift step recovery diode in the backward pumping stage of pulsed discharge, make it is longitudinal and
The extraction that laterally can be carried out carrier, greatly reduces the average moving distance of minority carrier, to accelerate minority
The extraction speed of carrier, so that the time in backward pumping stage reduces, the voltage formed in the load in pulse discharge loop
The voltage change ratio of pulse front edge is bigger, the time is shorter.Also, since DSRD device of the invention is due to introducing superjunction knot
Structure can increase device pressure resistance, so that the device in the case of increasing voltage overshoot can in identical drift region thickness
By property.Superjunction base region structure of the invention is using conventional superjunction technique, without additionally developing new process.
Drift step recovery diode provided by the invention, its working principles are as follows:
In structure cell as shown in Figure 2, when DSRD device is in the forward pumping stage of pulsed discharge, forward current
Minority carrier inside injection device is respectively stored in p-type carrier accumulation layer 4 and base area 3；When DSRD device is in
When the backward pumping stage of pulsed discharge, the minority carrier stored in DSRD device is extracted, and forms reverse current, and this is anti-
Into the electric current decline stage, the electric current in energy storage original part is transferred on load resistance, to form voltage arteries and veins on load resistance
Punching, i.e. the extraction speed of minority carrier determine the leading-edge pulse time in the voltage pulse forward position of pulse system output, voltage
Climbing and voltage peak.Wherein, since 3 width of base area is larger, so when the extraction in the minority carrier hole wherein stored
Between become influence leading-edge pulse time one of principal element.Conventional device is only longitudinally carrying out minority carrier extraction, few
The path of number carrier moving is longer, extracts the time and N-type base area thickness is positively correlated.Superjunction pressure resistance base area 3 of the invention, mainly
There is a following two advantage, first point: due to introducing super-junction structure, so that minority carrier is extracted path and change, not only may be used
To extract in the longitudinal direction, lateral extraction can also be carried out, since the width of P- column area 31 and N- column 32 is much smaller than superjunction pressure resistance
The thickness of base area 3, so that the average extraction path of whole minority carrier be made to shorten.Second point: super-junction structure is to electric field point
The adjustment effect of cloth, in the case where meeting same pressure voltage, it is also possible that base width further shortens, i.e., further
Shorten the average extraction path of minority carrier.Based on the above two o'clock reason, DSRD device pulsed discharge backward pumping
Stage reduces the time in backward pumping stage, so that arteries and veins so that the minority carrier hole in base area is extracted faster
The voltage change ratio in the voltage pulse forward position formed in the load in impulse electricity circuit is bigger, the time is shorter, also reduces simultaneously
Energy loss on DSRD device increases peak impulse voltage so that more energy be made to be transformed into load, improves
The efficiency of pulse system.
With same pressure-resistant base area with a thickness of 200 μm, 30 μm of cellular width of conventional p+-p-n0-n+DSRD device and the present invention
DSRD device carry out emulation comparison, conventional DSRD device takes drift doping concentration 4e13cm-3, cellular region pressure resistance about 3.4kV,
DSRD device of the invention takes N column and P column width is 15 μm, and doping concentration is 4e13cm-3, cellular region pressure resistance about 3.9kV.Though
So DSRD device of the invention introduces super-junction structure, and pressure resistance is risen, so that base area thickness can be shortened in practical application,
Shorten the time in voltage pulse forward position, but further in order to control variable, has still been used in this simulation comparison same
The device architecture of pressure-resistant base area thickness compares.Emulation electrical block diagram used is as shown in figure 3, remove DSRD device junction
Other than structure is different, the parameter and simulated conditions of other components are identical in circuit.
It is illustrated in figure 4 the voltage waveform of pulse system output, it can be seen that the leading-edge pulse time of DSRD of the invention
It is shorter, hence it is evident that be better than routine p+-p-n0-n+DSRD device.Therefore, DSRD device of the present invention is suitable for radio ultra wide band system.
Claims (1)
1. a kind of drift step recovery diode, structure cell includes the N-type Ohmic contact being cascading from bottom to top
Electrode (1), N-type heavy doping cathodic region (2), superjunction pressure resistance base area (3), p-type plasma accumulation layer (4), p-type heavy doping anode
(5), p-type Ohm contact electrode (6)；
Superjunction pressure resistance base area (3) is made of the N- column area (31) being set side by side with P- column area (32).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810962364.6A CN109065636A (en) | 2018-08-22 | 2018-08-22 | A kind of drift step recovery diode |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810962364.6A CN109065636A (en) | 2018-08-22 | 2018-08-22 | A kind of drift step recovery diode |
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| CN109065636A true CN109065636A (en) | 2018-12-21 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111653611A (en) * | 2020-07-20 | 2020-09-11 | 电子科技大学 | Method for improving reverse recovery characteristic of semiconductor device |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1722460A (en) * | 2004-07-15 | 2006-01-18 | 电子科技大学 | Power bipolar transistor with base local heavy saturation |
| US20130087851A1 (en) * | 2011-10-06 | 2013-04-11 | Denso Corporation | Semiconductor device with vertical semiconductor element |
| US20140110814A1 (en) * | 2012-10-19 | 2014-04-24 | Xin Lin | Resurf High Voltage Diode |
| CN106960788A (en) * | 2017-03-31 | 2017-07-18 | 华中科技大学 | A kind of preparation method of drift step recovery diode and products thereof |
| CN108574016A (en) * | 2018-04-13 | 2018-09-25 | 华中科技大学 | A kind of the silicon carbide DSRD devices and Pulsed power generator of super-junction structure |
-
2018
- 2018-08-22 CN CN201810962364.6A patent/CN109065636A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1722460A (en) * | 2004-07-15 | 2006-01-18 | 电子科技大学 | Power bipolar transistor with base local heavy saturation |
| US20130087851A1 (en) * | 2011-10-06 | 2013-04-11 | Denso Corporation | Semiconductor device with vertical semiconductor element |
| US20140110814A1 (en) * | 2012-10-19 | 2014-04-24 | Xin Lin | Resurf High Voltage Diode |
| CN106960788A (en) * | 2017-03-31 | 2017-07-18 | 华中科技大学 | A kind of preparation method of drift step recovery diode and products thereof |
| CN108574016A (en) * | 2018-04-13 | 2018-09-25 | 华中科技大学 | A kind of the silicon carbide DSRD devices and Pulsed power generator of super-junction structure |
Non-Patent Citations (1)
| Title |
|---|
| M.YAMAZAKI ET AL: ""Forward Transient Behavior of PiN and Super Junction Diodes"", 《2004 PROCEEDINGS OF THE 16TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS》 * |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111653611A (en) * | 2020-07-20 | 2020-09-11 | 电子科技大学 | Method for improving reverse recovery characteristic of semiconductor device |
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