CN109053157B - Ga2O3Base co-doped material target and preparation method thereof - Google Patents

Ga2O3Base co-doped material target and preparation method thereof Download PDF

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CN109053157B
CN109053157B CN201810772473.1A CN201810772473A CN109053157B CN 109053157 B CN109053157 B CN 109053157B CN 201810772473 A CN201810772473 A CN 201810772473A CN 109053157 B CN109053157 B CN 109053157B
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郑树文
郑涛
尚秋月
张涛
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South China Normal University
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Abstract

The invention discloses Ga2O3A base co-doped material target and a preparation method thereof. The preparation process of the material target comprises the following steps: mixing SiO2、GeO2Or SnO2One of nanometer powder and Ta2O5Nano powder, Ga2O3Uniformly ball-milling and mixing the nanometer powder according to the mass ratio of x to y (100-x-y) to obtain nanometer mixed powder; adding PVA (polyvinyl alcohol) for ball milling and granulation to obtain powder; putting the powder into a die to be pressed and molded to obtain a primary blank; degreasing the primary blank; and carrying out cold isostatic pressing treatment on the degreased primary blank to obtain a biscuit. Finally, the biscuit is sintered at high temperature (under oxygen environment) or treated by hot isostatic pressing (under argon environment) to obtain high density (relative density)>87%) of Ga2O3A target of doping material. Ga prepared by the invention2O3The base doping material target can satisfy the requirement of a magnetic cavity sputtering method, an electron beam evaporation method or a laser pulse deposition method on Ga2O3Doped target requirements of the device.

Description

Ga2O3Base co-doped material target and preparation method thereof
Technical Field
The invention relates to a preparation method of a target material, in particular to Ga2O3A base co-doped material target and a preparation method thereof.
Background
With the rapid development of the photoelectric technology, photoelectric devices such as LEDs, OLEDs, and detectors are promoting the revolution of the green light source industry and the information industry. In order to improve the photoelectric characteristics of the photoelectric device, a transparent conductive oxide material (TCO) is generally deposited on the structural surface of the photoelectric device, because the TCO material has both transparent and conductive properties, and the TCO material is widely used as a transparent conductive electrode layer and a window layer material of the photoelectric device at present.
In the conventional transparent conductive oxide materials, the most representative material is ITO (indium tin oxide), and since the ITO material target is well manufactured and the related deposition technology is also perfect, the ITO material has been widely applied to optoelectronic devices such as LEDs, OLEDs, solar cells, sensors, etc., and is the most widely applied transparent conductive oxide material at present. As is known, the main material of ITO is In2O3Therefore, a large amount of In materials are needed for the large-scale application of photoelectric devices, but the In materials are mainly from In ores, the In content on the earth is low, the In ores are low In grade, special smelting is not needed, and the In materials are only used as byproducts of smelting of other elements, so the production cost is high. Since ITO has strong absorption in the deep ultraviolet band, research work for developing alternative ITO materials has been ongoing. Al is considered to be a suitable substitute material for ITO, so a great deal of research work is carried out in the same lines in the last decade, the prior art is mature, but because Al element has strong activity, the stability of the ZnO Al material is poor, and the application of the ZnO Al material in photoelectric devices is influenced, so that the ZnO Al material for the photoelectric devices is rarely used as a conductive electrode layer and a window material in the market at present. It should be noted that the ITO and ZnO and Al materials have narrow energy gaps, have good light transmittance for light waves above 320nm, and have strong absorption for light below 320nm, so that the ITO and ZnO and Al materials are not suitable for TCO materials of deep ultraviolet photoelectric devices. The short-wavelength photoelectric device has important application value in the fields of sterilization, disinfection, solidification, solar blind detection and the like, so that the deep ultraviolet TCO material with the wavelength less than 320nm is urgently required to be developed.
Ga2O3The material is a wide-energy gap oxide material, the energy gap is about 4.9eV, the material has good light transmission (more than 80%) above 250nm, and the material is considered as the TCO most potential material of short-wavelength photoelectric devices. But intrinsic Ga2O3In order to increase Ga2O3Is conductive, the same row as Ga2O3Doping research is carried out on the material, and the fact that the Ga can be improved by doping Si, Ge or Sn is proved2O3The improvement is small, and the method is not suitable for commercial use. And the co-doping technology is verified in materials such as ITO and ZnO, so that the conductivity of the material can be obviously improved. To further improve Ga2O3The invention discloses Ga2O3The preparation technology of base co-doping material target hopes to adopt the co-doping technology to improve Ga2O3Promoting the conductivity of Ga2O3TCO application of materials.
Disclosure of Invention
The object of the present invention is to provide a Ga compound2O3A base co-doped material target and a preparation method thereof. Prepared high-density Ga2O3The base co-doped material target can meet the use requirements of targets of a magnetic cavity sputtering method, an electron beam evaporation method or a laser pulse deposition method. Ga can be deposited by depositing a material film layer using the material target2O3Better film forming quality and higher conductivity, and promotes Ga2O3The material is used as TCO to be applied to products such as deep ultraviolet light emitting devices, solar blind detectors and the like.
The purpose of the invention is realized by at least one of the following technical solutions.
Ga2O3Method for producing base co-doped material target whose main component is Ga2O3Materials, and incorporation of small amounts of SiO2、GeO2Or SnO2A material of (1) and Ta2O5A material. The mixing mass ratio of the components is (100-x-y) x: y, wherein the value of x is between 0.6 and 2.5, and the value of y is between 0.08 and 0.2; said Ga being2O3、SiO2And Ta2O5The material is nano powder, the grain diameter is 10-40 nm, and the purity is more than 99.99%.
The Ga of the invention2O3A method of making a base co-doped material target, comprising the steps of:
a) mixing SiO2、GeO2Or SnO2One of nanometer powder and Ta2O5Nano powder, Ga2O3Nano powder according to massUniformly ball-milling and mixing the mixture according to the ratio of x to y (100-x-y) to obtain nano mixed powder, wherein the value of x is 0.6-2.5, and the value of y is 0.08-0.2; the particle size of the nano powder is 10-40 nm, and the purity of the nano powder is more than 99.99%;
b) then adding a PVA binder accounting for 0.8-1.5 wt% of the nano mixed powder for ball milling and granulation treatment to obtain powder; then, putting the powder into a pressing die, pressing under the pressure of 15-70 MPa (by adopting a normal-temperature hydraulic press), and keeping the pressure for 3-5 minutes to obtain a primary blank; then putting the primary blank into a heat preservation box for degreasing treatment;
c) carrying out cold isostatic pressing treatment at 250-400 MPa on the degreased primary blank, and maintaining the pressure for 1-2 minutes to obtain a biscuit;
d) sintering the biscuit at high temperature in an oxygen environment, wherein the sintering temperature is 1350-1550 ℃, the heat preservation time is 5-9 hours, the oxygen pressure is-0.02 MPa, the temperature rise speed is 300-500 ℃/h, the temperature drop speed is 100-150 ℃/h, the temperature is reduced to 850-900 ℃, and naturally cooling is carried out to obtain Ga with the density higher than 87%2O3A radical dopant material target.
Further, the degreasing treatment in the step b) is specifically: heating to 100-120 ℃ at the speed of 1-2 ℃/min, preserving heat for 40-60 minutes, then heating to 550-600 ℃ at the speed of 3-5 ℃/min, preserving heat for 60-120 minutes, and finally naturally cooling.
The invention also provides Ga prepared by the preparation method2O3A base co-doped material target.
Ga of the invention2O3Another method for preparing a base co-doped material target includes the steps of:
A) mixing SiO2、GeO2Or SnO2One of nanometer powder and Ta2O5Nano powder, Ga2O3Uniformly ball-milling and mixing the nano powder according to the mass ratio of x to y (100-x-y) to obtain nano mixed powder, wherein the value of x is 0.6-2.5, and the value of y is 0.08-0.2; the particle size of the nano powder is 10-40 nm, and the purity of the nano powder is more than 99.99%;
B) then adding a PVA binder accounting for 0.8-1.5 wt% of the nano mixed powder for ball milling and granulation treatment to obtain powder; then, putting the powder into a pressing die, pressing under the pressure of 15-70 MPa (by adopting a normal-temperature hydraulic press), and keeping the pressure for 3-5 minutes to obtain a primary blank; then putting the primary blank into a heat preservation box for degreasing treatment;
C) carrying out cold isostatic pressing treatment at 250-400 MPa on the degreased primary blank, and maintaining the pressure for 1-2 minutes to obtain a biscuit;
D) carrying out hot isostatic pressing treatment on the biscuit in an argon environment, keeping the pressure at 100-135 MPa, keeping the temperature at 950-1050 ℃, keeping the temperature for 2.5-4 hours, wherein the heating rate from the normal temperature to 850 ℃ is 200-250 ℃/h, the heating rate from 850 ℃ to 1050 ℃ is 80-100 ℃/h, the cooling rate is 100 ℃/h, cooling to 700-750 ℃, then naturally cooling to the room temperature, and finally obtaining Ga with the density of better than 93%2O3A radical dopant material target.
Further, the degreasing treatment in the step B) is specifically as follows: heating to 100-120 ℃ at the speed of 1-2 ℃/min, preserving heat for 40-60 minutes, then heating to 550-600 ℃ at the speed of 3-5 ℃/min, preserving heat for 60-120 minutes, and finally naturally cooling.
The invention also provides Ga prepared by the preparation method2O3A base co-doped material target.
Compared with the prior art, the invention has the following beneficial effects and advantages:
1) ga has not been found yet2O3The invention discloses a method for manufacturing a co-doped material target, which adopts Si, Ge or Sn and Ta to co-dope Ga2O3The material target production technique of (1).
2) The invention provides two kinds of high-density Ga2O3The manufacturing process of the co-doped material target comprises the following steps: high temperature atmosphere sintering and hot isostatic pressing.
3) Ga produced by the invention2O3The base co-doped material target can meet the requirement of a magnetic cavity sputtering method, an electron beam evaporation method or a laser pulse deposition method on high-quality Ga2O3The use of the target material is required.
4) Ga produced by the invention2O3Codoped materialsTarget specific Ga2O3Material targets doped with a single Si or Ge or Sn, e.g. for Ga2O3The film quality will be better (because of co-doping with Ga)2O3Ga doping than single Si or Ge, Sn2O3Better material stability); codoping Ga in contrast to doping with a single element of Si, Ge or Sn2O3Can be Ga2O3The material provides more free electrons, and is helpful for improving the conductivity of the material.
Detailed Description
The following examples are provided to further illustrate the practice of the present invention in order to better illustrate the features of the technical method of the present invention, but the practice and protection of the present invention are not limited thereto, and it should be noted that the following descriptions, unless otherwise specified, are understood or implemented by those skilled in the art with reference to the prior art.
Example 1:
A) selecting commercial nano Ga with the purity of 99.999 percent2O3Powder, nano SiO with purity of 99.995%2Powder and Ta2O5Powder with particle size of 30nm (or about 30 nm).
B) The above Ga is2O3Powder, SiO2Powder and Ta2O5Putting the powder into a ball mill according to the mass ratio of 99.32:0.6:0.08, uniformly ball-milling and mixing for 1 hour, then adding 1wt% of PVA (polyvinyl alcohol) binder, ball-milling for 1.5 hours, and then carrying out granulation treatment to obtain the STGO powder.
C) And (3) putting the STGO powder into a die, pressing under 65MPa (by adopting a normal-temperature hydraulic press), maintaining the pressure for 3 minutes, and forming to obtain a primary blank. And then putting the primary blank into a heat preservation box for degreasing treatment. In order to achieve good degreasing effect and prevent the primary blank from cracking, the temperature rise process is carried out in two steps, namely, the temperature is raised to 120 ℃ at the speed of 1 ℃/min, the temperature is preserved for 60 minutes, then the temperature is raised to 550 ℃ at the speed of 3 ℃/min, the temperature is preserved for 120 minutes, and finally the blank is naturally cooled.
D) And (4) carrying out secondary forming on the degreased primary blank by using a cold isostatic pressing at 400MPa, and keeping the pressure for 1 minute to obtain a biscuit.
E) Exposing the biscuit to oxygenSintering at 1450 deg.C for 8 hr under oxygen pressure of 0.02 MPa. Wherein the heating rate is 500 ℃/h, the cooling rate is 100 ℃/h, the Ga with the density of 89.2 percent is obtained after the temperature is reduced to 900 ℃ and natural cooling is carried out2O3A radical dopant material target.
Example 2:
A) selecting commercial nano Ga with the purity of 99.999 percent2O3Powder, nano SiO with purity of 99.995%2Powder and Ta2O5Powder with a particle size of about 15 nm.
B) The above Ga is2O3Powder, SiO2Powder and Ta2O5Putting the powder into a ball mill according to the mass ratio of 98.8:1:0.2, uniformly ball-milling and mixing for 1 hour, then adding 1wt% of PVA (polyvinyl alcohol) binder, ball-milling for 1.5 hours, and then carrying out granulation treatment to obtain the STGO powder.
C) And (3) putting the STGO powder into a die, pressing under 20MPa (by adopting a normal-temperature hydraulic press), maintaining the pressure for 5 minutes, and forming to obtain a primary blank. And then putting the primary blank into a heat preservation box for degreasing treatment. The degreasing and temperature rising process is carried out in two steps, namely, the temperature is raised to 100 ℃ at the speed of 2 ℃/min, the temperature is preserved for 40 minutes, then the temperature is raised to 600 ℃ at the speed of 5 ℃/min, the temperature is preserved for 60 minutes, and finally the natural cooling is carried out.
D) And (4) carrying out 250MPa cold isostatic pressing secondary forming treatment on the degreased primary blank, and keeping the pressure for 2 minutes to obtain a biscuit.
E) And finally, carrying out hot isostatic pressing treatment on the biscuit in an argon environment, keeping the pressure at 125MPa, keeping the temperature at 1000 ℃ and keeping the temperature for 4 hours. Wherein the heating rate of normal temperature to 850 ℃ is 200 ℃/h, the heating rate of 850 ℃ to 1000 ℃ is 90 ℃/h, the cooling rate is 100 ℃/h, the Ga powder is naturally cooled to the room temperature after being cooled to 700 ℃, and finally, the Ga with the density of 93.8 percent is obtained2O3A radical dopant material target.
Example 3:
A) selecting commercial nano Ga with the purity of 99.999 percent2O3Powder, nano GeO with purity of 99.995%2Powder and Ta2O5Powder with a particle size of about 40 nm.
B) On the handleGa as described above2O3Powder, GeO2Powder and Ta2O5Putting the powder into a ball mill according to the mass ratio of 98.3:1.5:0.2, uniformly ball-milling and mixing for 1.5 hours, then adding 1.5 wt% of PVA (polyvinyl alcohol) binder, ball-milling for 2 hours, and then carrying out granulation treatment to obtain GTGO powder.
C) And (3) putting the GTGO powder into a die, pressing under 65MPa (by adopting a normal-temperature hydraulic press), maintaining the pressure for 3 minutes, and forming to obtain a primary blank. And then putting the primary blank into a heat preservation box for degreasing treatment. The degreasing and temperature rising process is carried out in two steps, namely, the temperature is raised to 120 ℃ at the speed of 1 ℃/minute, the temperature is preserved for 60 minutes, then the temperature is raised to 600 ℃ at the speed of 5 ℃/minute, the temperature is preserved for 60 minutes, and finally the natural cooling is carried out.
D) And (4) carrying out 250MPa cold isostatic pressing secondary forming treatment on the degreased primary blank, and keeping the pressure for 2 minutes to obtain a biscuit.
E) And (3) sintering the biscuit at high temperature in an oxygen environment, wherein the sintering temperature is 1350 ℃, the heat preservation time is 9 hours, and the oxygen pressure is-0.02 MPa. Wherein the temperature rising speed is 300 ℃/h, the temperature reducing speed is 150 ℃/h, after the temperature is reduced to 850 ℃, the Ga with the density of 87.5 percent is obtained by natural cooling2O3A radical dopant material target.
Example 4:
A) selecting commercial nano Ga with the purity of 99.999 percent2O3Powder, nano GeO with purity of 99.995%2Powder and Ta2O5Powder with a particle size of about 20 nm.
B) The above Ga is2O3Powder, GeO2Powder and Ta2O5Putting the powder into a ball mill according to the mass ratio of 98.7:1.2:0.1, uniformly ball-milling and mixing for 1 hour, then adding 0.8 wt% of PVA (polyvinyl alcohol) binder, ball-milling for 1.5 hours, and then granulating to obtain GTGO powder.
C) And (3) putting the GTGO powder into a die, pressing under 15MPa (by adopting a normal-temperature hydraulic press), maintaining the pressure for 5 minutes, and forming to obtain a primary blank. And then putting the primary blank into a heat preservation box for degreasing treatment. The degreasing and temperature rising process is carried out in two steps, namely, the temperature is raised to 100 ℃ at the speed of 1 ℃/min, the temperature is preserved for 60 minutes, then the temperature is raised to 600 ℃ at the speed of 3 ℃/min, the temperature is preserved for 90 minutes, and finally the natural cooling is carried out.
D) And (5) carrying out 350MPa cold isostatic pressing secondary forming treatment on the degreased primary blank, and keeping the pressure for 2.5 minutes to obtain a biscuit.
E) And finally, carrying out hot isostatic pressing treatment on the biscuit in an argon environment, keeping the pressure at 135MPa, keeping the temperature at 950 ℃, and keeping the temperature for 4 hours. Wherein the heating rate of normal temperature to 850 ℃ is 200 ℃/h, the heating rate of 850 ℃ to 950 ℃ is 90 ℃/h, the cooling rate is 100 ℃/h, the Ga powder is naturally cooled to the room temperature after being cooled to 700 ℃, and finally, the Ga with the density of 93.1 percent is obtained2O3A radical dopant material target.
Example 5:
A) selecting commercial nano Ga with the purity of 99.999 percent2O3Powder, nano SnO with purity of 99.995%2Powder and Ta2O5Powder with a particle size of about 10 nm.
B) The above Ga is2O3Powder, SnO2Powder and Ta2O5Putting the powder into a ball mill according to the mass ratio of 97.4:2.5:0.1, uniformly ball-milling and mixing for 1.5 hours, then adding 1.5 wt% of PVA (polyvinyl alcohol) binder, ball-milling for 2 hours, and then granulating to obtain TTGO powder.
C) And (3) putting the TTGO powder into a die, pressing under 70MPa (by adopting a normal-temperature hydraulic press), keeping the pressure for 3 minutes, and forming to obtain a primary blank. And then putting the primary blank into a heat preservation box for degreasing treatment. The degreasing temperature rise process is carried out in two steps, namely, the temperature is raised to 120 ℃ at the speed of 2 ℃/min, the temperature is preserved for 40 minutes, then the temperature is raised to 550 ℃ at the speed of 3 ℃/min, the temperature is preserved for 120 minutes, and finally the natural cooling is carried out.
D) And (4) carrying out 250MPa cold isostatic pressing secondary forming treatment on the degreased primary blank, and keeping the pressure for 2 minutes to obtain a biscuit.
E) And (3) sintering the biscuit at 1550 ℃ in an oxygen environment at a high temperature for 5 hours under the oxygen pressure of 0.02 MPa. Wherein the temperature rising speed is 500 ℃/h, the temperature reducing speed is 100 ℃/h, after the temperature is reduced to 900 ℃, the Ga with the density of 88.3 percent is obtained by natural cooling2O3A radical dopant material target.
Example 6:
A) selecting commercial nano Ga with the purity of 99.999 percent2O3Powder, nano SnO with purity of 99.995%2Powder and Ta2O5Powder with a particle size of about 20 nm.
B) The above Ga is2O3Powder, GeO2Powder and Ta2O5Putting the powder into a ball mill according to the mass ratio of 97.8:2:0.2, uniformly ball-milling and mixing for 1.5 hours, then adding 1.5 wt% of PVA (polyvinyl alcohol) binder, ball-milling for 1.5 hours, and then granulating to obtain TTGO powder.
C) And (3) putting the TTGO powder into a die, pressing under 40MPa (by adopting a normal-temperature hydraulic press), keeping the pressure for 4 minutes, and forming to obtain a primary blank. And then putting the primary blank into a heat preservation box for degreasing treatment. The degreasing and temperature rising process is carried out in two steps, namely, the temperature is raised to 120 ℃ at the speed of 2 ℃/min, the temperature is preserved for 40 minutes, then the temperature is raised to 600 ℃ at the speed of 5 ℃/min, the temperature is preserved for 90 minutes, and finally the natural cooling is carried out.
D) And (4) carrying out 400MPa cold isostatic pressing secondary forming treatment on the degreased primary blank, and keeping the pressure for 1 minute to obtain a biscuit.
E) And finally, carrying out hot isostatic pressing treatment on the biscuit in an argon environment, keeping the pressure at 100MPa, the temperature at 1050 ℃ and the heat preservation time for 2 hours. Wherein the heating rate of normal temperature to 850 ℃ is 250 ℃/h, the heating rate of 850 ℃ to 950 ℃ is 80 ℃/h, the cooling rate is 100 ℃/h, the Ga with the density of 93.5 percent is obtained by naturally cooling to the room temperature after being cooled to 750 ℃2O3A radical dopant material target.
The above description is only for the purpose of illustrating the preferred embodiments of the present invention and is not to be construed as limiting the invention, and any modifications, equivalents and improvements made within the spirit and principle of the present invention are intended to be included within the scope of the present invention.

Claims (4)

1. Ga2O3The preparation method of the base co-doped material target is characterized by comprising the following steps of:
a) mixing SiO2、GeO2Or SnO2One of nanometer powder and Ta2O5Nano powder, Ga2O3Uniformly ball-milling and mixing the nano powder according to the mass ratio of x to y (100-x-y) to obtain nano mixed powder, wherein the value of x is 0.6-2.5, and the value of y is 0.08-0.2; the particle size of the nano powder is 10-40 nm, and the purity of the nano powder is more than 99.99%;
b) then adding a PVA binder accounting for 0.8-1.5 wt% of the nano mixed powder for ball milling and granulation treatment to obtain powder; then, putting the powder into a pressing die, pressing under the pressure of 15-70 MPa for 3-5 minutes, and forming to obtain a primary blank; then putting the primary blank into a heat preservation box for degreasing treatment; the degreasing treatment specifically comprises the following steps: heating to 100-120 ℃ at the speed of 1-2 ℃/min, preserving heat for 40-60 minutes, then heating to 550-600 ℃ at the speed of 3-5 ℃/min, preserving heat for 60-120 minutes, and finally naturally cooling;
c) carrying out cold isostatic pressing treatment at 250-400 MPa on the degreased primary blank, and maintaining the pressure for 1-2 minutes to obtain a biscuit;
d) sintering the biscuit at high temperature in an oxygen environment, wherein the sintering temperature is 1350-1550 ℃, the heat preservation time is 5-9 hours, the oxygen pressure is-0.02 MPa, the temperature rise speed is 300-500 ℃/h, the temperature drop speed is 100-150 ℃/h, the temperature is reduced to 850-900 ℃, and naturally cooling is carried out to obtain Ga with the density higher than 87%2O3A radical dopant material target.
2. Ga obtained by the production method of claim 12O3A base co-doped material target.
3. Ga2O3The preparation method of the base co-doped material target is characterized by comprising the following steps of:
A) mixing SiO2、GeO2Or SnO2One of nanometer powder and Ta2O5Nano powder, Ga2O3Uniformly ball-milling and mixing the nano powder according to the mass ratio of x to y (100-x-y) to obtain nano mixed powder, wherein the value of x is 0.6-2.5, and the value of y is 0.08-0.2; the particle size of the nano powder is 10-40 nm, and the purity of the nano powder is more than 99.99%;
B) then adding a PVA binder accounting for 0.8-1.5 wt% of the nano mixed powder for ball milling and granulation treatment to obtain powder; then, putting the powder into a pressing die, pressing under the pressure of 15-70 MPa for 3-5 minutes, and forming to obtain a primary blank; then putting the primary blank into a heat preservation box for degreasing treatment; the degreasing treatment specifically comprises the following steps: heating to 100-120 ℃ at the speed of 1-2 ℃/min, preserving heat for 40-60 minutes, then heating to 550-600 ℃ at the speed of 3-5 ℃/min, preserving heat for 60-120 minutes, and finally naturally cooling;
C) carrying out cold isostatic pressing treatment at 250-400 MPa on the degreased primary blank, and maintaining the pressure for 1-2 minutes to obtain a biscuit;
D) carrying out hot isostatic pressing treatment on the biscuit in an argon environment, keeping the pressure at 100-135 MPa, keeping the temperature at 950-1050 ℃, keeping the temperature for 2.5-4 hours, wherein the heating rate from the normal temperature to 850 ℃ is 200-250 ℃/h, the heating rate from 850 ℃ to 1050 ℃ is 80-100 ℃/h, the cooling rate is 100 ℃/h, cooling to 700-750 ℃, then naturally cooling to the room temperature, and finally obtaining Ga with the density of better than 93%2O3A radical dopant material target.
4. Ga obtained by the production method of claim 32O3A base co-doped material target.
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