CN109037420B - Flip chip die bonding device and method - Google Patents

Flip chip die bonding device and method Download PDF

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Publication number
CN109037420B
CN109037420B CN201810712664.9A CN201810712664A CN109037420B CN 109037420 B CN109037420 B CN 109037420B CN 201810712664 A CN201810712664 A CN 201810712664A CN 109037420 B CN109037420 B CN 109037420B
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flip chip
substrate
suction nozzle
vacuum suction
electrode
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CN109037420A (en
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罗锦长
许晋源
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Huizhou Thorled-Opto Co ltd
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Huizhou Thorled-Opto Co ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68792—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the construction of the shaft
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/483—Containers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/0066—Processes relating to semiconductor body packages relating to arrangements for conducting electric current to or from the semiconductor body

Abstract

The invention discloses a flip chip die bonding device and a method, wherein the device comprises: the device comprises a flip chip, a film, a flip chip bearing table, a thimble driving device, a receiving support, a picking mechanism, a rotating mechanism and a translation mechanism; the picking mechanism is used for picking up or putting down the flip chip; the rotating mechanism is used for rotating the flip chip picked up by the picking mechanism by 180 degrees in a plane vertical to the film, so that the electrode of the flip chip faces downwards; the translation mechanism is used for moving the flip chip to a position corresponding to the circuit on the receiving bracket; according to the invention, the substrate of the flip chip is adhered to the film, so that the thimble upwards pushes the flip chip through the substrate of the flip chip, and the epitaxial layer and the electrode of the flip chip are not damaged by pushing.

Description

Flip chip die bonding device and method
All as the field of technology
The invention relates to the technical field of chip die bonding, in particular to a flip chip die bonding device and a flip chip die bonding method.
All the above-mentioned background techniques
An LED (Light Emitting Diode) is a semiconductor device capable of converting electric energy into Light energy, and has the advantages of long service life, high Light efficiency, low radiation, low power consumption, and the like.
The earliest LED chips appeared to be LED front mounted chips. The LED normal chip is sequentially provided with an electrode, P-GaN, a light emitting layer, N-GaN and a substrate from top to bottom. The electrode in the LED forward chip is arranged above the luminous layer, and can occupy the luminous area and influence the luminous efficiency, so that research personnel design the LED flip chip with the electrode arranged below. The traditional LED flip chip sequentially comprises a substrate, N-GaN, a light emitting layer, P-GaN and an electrode from top to bottom, wherein the substrate is made of sapphire, and the structure formed by the N-GaN, the light emitting layer and the P-GaN is commonly called an epitaxial layer, so that the epitaxial layer is weaker than the substrate. In recent years, as micro LED flip chips are more widely used, the material used for the epitaxial layer of the LED flip chip becomes GaAs, which is weaker than GaN. The electrode of the existing LED flip chip is adhered to the blue film in the die bonding process, and when the LED flip chip is jacked up by the thimble, the epitaxial layer is jacked, so that the epitaxial layer is easy to be jacked, and the problems of electric leakage failure and the like are caused.
Utility model patent with publication number CN205609484U discloses a novel flip chip die bonding mechanism, include: base, flip-chip LED chip and be located the plummer between base and the flip-chip LED chip, the plummer is used for bearing the flip-chip LED chip, the plummer top is provided with the adsorption equipment who adsorbs the flip-chip LED chip, be provided with drive arrangement on the base, the inside thimble portion of laying that is provided with of plummer, be provided with the thimble in the thimble portion of laying, the drive arrangement drive the thimble reciprocates, the plummer with there is one deck scribing membrane between the flip-chip LED chip, the flip-chip LED chip pastes on the scribing membrane, the electrode of flip-chip LED chip bottom is aimed at respectively the thimble portion of laying, the top of thimble with the bottom electrode position of flip-chip LED chip is corresponding.
In the above patent, although the light-emitting layer of the chip is not damaged when the thimble lifts the chip, the following disadvantages still exist: the thimble can damage the electrode of the flip-chip LED chip.
All the contents of the invention
The first objective of the present invention is to provide a flip chip die attach apparatus, which prevents the top pin from damaging the epitaxial layer and the electrode of the flip chip when the top pin lifts the flip chip.
In order to realize the first purpose of the invention, the invention adopts the following technical scheme:
a flip chip die attach apparatus, comprising: the device comprises a flip chip, a film, a bearing table, a thimble driving device and a receiving bracket; the flip chip comprises a substrate, an epitaxial layer and an electrode; the film is fixedly arranged on the bearing table, and the bearing table is provided with a thimble accommodating hole; the film has viscosity, and the flip chip is adhered to the upper surface of the film; the ejector pins move up and down in the ejector pin accommodating holes under the driving of the ejector pin driving device, and the flip chip is jacked up on the lower surface of the film; the substrate of the flip chip is adhered to the upper surface of the film, and the ejector pin is positioned below the substrate of the flip chip; the flip chip die bonding device also comprises a pickup mechanism, a rotating mechanism, a translation mechanism and a receiving bracket; the picking mechanism picks up the jacked flip chip or puts down the flip chip; the rotating mechanism rotates the flip chip picked up by the picking mechanism by 180 degrees in a plane vertical to the film, so that the electrode of the flip chip faces downwards; the translation mechanism is used for moving the flip chip picked by the picking mechanism to a position corresponding to the line on the receiving bracket; the receiving bracket is used for receiving the flip chip; and a circuit used for being electrically communicated with the electrode of the flip chip is arranged on the receiving bracket.
Further, the pick-up mechanism comprises an epitaxial layer pick-up assembly and a substrate pick-up assembly; the epitaxial layer pickup assembly comprises an epitaxial layer vacuum suction nozzle, and the epitaxial layer vacuum suction nozzle corresponds to the position of the epitaxial layer of the flip chip and is used for sucking the epitaxial layer of the flip chip; the substrate picking assembly comprises a substrate vacuum suction nozzle, and the substrate vacuum suction nozzle corresponds to the position of the substrate of the flip chip and is used for sucking the substrate of the flip chip; the rotating output end of the rotating mechanism is connected with the rotating input end of the epitaxial layer picking assembly and is used for driving the epitaxial layer vacuum suction nozzle to rotate 180 degrees in a plane vertical to the thin film, or the rotating output end of the rotating mechanism is connected with the rotating input end of the substrate picking assembly and is used for driving the substrate vacuum suction nozzle to rotate 180 degrees in the plane vertical to the thin film; the moving output end of the translation mechanism is connected with the moving input end of the epitaxial layer pickup assembly and used for driving the epitaxial layer vacuum suction nozzle to move, or the moving output end of the translation mechanism is connected with the moving input end of the substrate pickup assembly and used for driving the substrate vacuum suction nozzle to move.
Furthermore, the epitaxial layer pickup assembly further comprises an epitaxial layer die bonding arm, and the epitaxial layer die bonding arm is vertically and fixedly connected with the epitaxial layer vacuum suction nozzle; the substrate picking assembly also comprises a substrate die bonding arm, and the substrate die bonding arm is vertically and fixedly connected with the substrate vacuum suction nozzle; the rotating output end of the rotating mechanism is connected with the rotating input end of the epitaxial layer die bonding arm, or the rotating output end of the rotating mechanism is connected with the rotating input end of the substrate die bonding arm; and the moving output end of the translation mechanism is connected with the moving input end of the crystal fixing arm of the epitaxial layer, or the moving output end of the translation mechanism is connected with the moving input end of the crystal fixing arm of the substrate.
Further, the epitaxial layer pickup assembly comprises a plurality of epitaxial layer vacuum nozzles.
Further, the pick-up mechanism comprises an electrode pick-up assembly and a substrate pick-up assembly; the electrode picking assembly comprises an electrode vacuum suction nozzle, the electrode vacuum suction nozzle corresponds to the two electrodes of the flip chip and is used for sucking the two electrodes of the flip chip; the substrate pick-up assembly comprises a substrate vacuum suction nozzle corresponding to the substrate of the flip chip for sucking the substrate of the flip chip; the rotary output end of the rotary mechanism is connected with the rotary input end of the electrode picking assembly and is used for driving the electrode vacuum suction nozzle to rotate 180 degrees in a plane vertical to the thin film, or the rotary output end of the rotary mechanism is connected with the rotary input end of the substrate picking assembly and is used for driving the substrate vacuum suction nozzle to rotate 180 degrees in the plane vertical to the thin film; and the moving output end of the translation mechanism is connected with the moving input end of the electrode picking assembly and is used for driving the electrode vacuum suction nozzle to move, or the moving output end of the translation mechanism is connected with the moving input end of the substrate picking assembly and is used for driving the substrate vacuum suction nozzle to move.
Furthermore, the electrode picking assembly also comprises an electrode die bonding arm, and the electrode die bonding arm is vertically and fixedly connected with the electrode vacuum suction nozzle; the substrate pick-up assembly; the electrode picking assembly comprises a substrate die bonding arm, and the substrate die bonding arm is vertically and fixedly connected with the substrate vacuum suction nozzle; the rotary output end of the rotary mechanism is connected with the rotary input end of the electrode die bonding arm, or the rotary output end of the rotary mechanism is connected with the rotary input end of the substrate die bonding arm; and the moving output end of the translation mechanism is connected with the moving input end of the electrode die bonding arm, or the moving output end of the translation mechanism is connected with the moving input end of the substrate die bonding arm.
Further, the electrode picking assembly comprises an even number of symmetrically arranged electrode vacuum nozzles for attracting the two electrodes of the flip chip.
Further, the substrate pick-up assembly includes a plurality of substrate vacuum nozzles.
Further, the picking mechanism includes a side picking assembly; the side pick assembly comprises a side pick head for clamping a side of the flip chip; a rotating output shaft of the rotating mechanism is connected with a rotating input shaft of the side pick-up head and is used for driving the side pick-up head to rotate 180 degrees in a plane vertical to the film; and a moving output shaft of the translation mechanism is connected with a moving input shaft of the side picking assembly and is used for driving the side picking head to move.
Further, the side picking assembly further comprises a side die bonding arm, and the side die bonding arm is vertically and fixedly connected with the side picking head; and a moving output shaft of the translation mechanism is connected with a moving input shaft of the side die bonding arm.
The second objective of the present invention is to provide a flip chip die bonding method, which prevents the top damage to the epitaxial layer and the electrode of the flip chip when the top pin jacks up the flip chip.
In order to achieve the second purpose of the invention, the invention adopts the following technical scheme:
a flip chip die bonding method adopts the flip chip die bonding device; the die bonding method comprises the following steps: (1) adhering a substrate of the flip chip to the upper surface of the film; (2) the thimble is driven to move upwards by the thimble driving device, and the thimble upwards pushes the substrate of the flip chip; (3) when the force of the ejector pin pushing the flip chip upwards is larger than the adhesive force of the film to the substrate of the flip chip, the substrate of the flip chip is separated from the film; (4) the picking mechanism picks up the flip chip separated from the film; (5) the rotating mechanism rotates the flip chip picked up by the picking mechanism by 180 degrees in a plane vertical to the film, so that the electrode of the flip chip faces downwards and the substrate faces upwards; the translation mechanism moves the flip chip picked by the picking mechanism to a position corresponding to the circuit on the receiving bracket; (6) the flip chip picking device puts the flip chip on the corresponding position on the receiving bracket.
Further, the pick-up mechanism comprises an epitaxial layer pick-up assembly and a substrate pick-up assembly; the epitaxial layer pickup assembly comprises an epitaxial layer vacuum nozzle; the substrate pick-up assembly comprises a substrate vacuum nozzle;
the step (4) is that the epitaxial layer picking assembly attracts the epitaxial layer of the flip chip through the epitaxial layer vacuum suction nozzle to further attract the flip chip, the step (5) is that the rotating mechanism drives the epitaxial layer vacuum suction nozzle to rotate 180 degrees in a plane vertical to the thin film to drive the flip chip to rotate 180 degrees in the plane vertical to the thin film to enable the electrode of the flip chip to face downwards and the substrate to face upwards, the substrate picking assembly attracts the substrate of the flip chip through the substrate vacuum suction nozzle, the epitaxial layer vacuum suction nozzle stops attracting the epitaxial layer of the flip chip after attracting the substrate of the flip chip by the substrate vacuum suction nozzle, the translation mechanism drives the substrate vacuum suction nozzle to move to drive the flip chip to move, and the electrode of the flip chip is enabled to correspond to the line position on the receiving support,
or, the step (4) is that the epitaxial layer picking assembly attracts the epitaxial layer of the flip chip through the epitaxial layer vacuum suction nozzle to further attract the flip chip, the substrate picking assembly attracts the substrate of the flip chip through the substrate vacuum suction nozzle, the epitaxial layer vacuum suction nozzle stops attracting the epitaxial layer of the flip chip after the substrate vacuum suction nozzle attracts the substrate of the flip chip, the step (5) is that the rotating mechanism drives the substrate vacuum suction nozzle to rotate 180 degrees in a plane perpendicular to the thin film after the substrate vacuum suction nozzle attracts the flip chip, drives the flip chip to rotate 180 degrees in the plane perpendicular to the thin film, enables the electrode of the flip chip to face downwards and the substrate to face upwards, the translation mechanism drives the substrate vacuum suction nozzle to move to drive the flip chip to move, and enables the electrode of the flip chip to correspond to the circuit position on the receiving support,
or, the epitaxial layer picking assembly sucks the epitaxial layer of the flip chip through the epitaxial layer vacuum suction nozzle in the step (4) to further suck the flip chip, the rotation mechanism drives the epitaxial layer vacuum suction nozzle to rotate 180 degrees in the plane vertical to the film to drive the flip chip to rotate 180 degrees in the plane vertical to the film to enable the electrode of the flip chip to face downwards and the substrate to face upwards, the translation mechanism drives the epitaxial layer vacuum suction nozzle to move to drive the flip chip to move to enable the electrode of the flip chip to correspond to the circuit position on the receiving support, the substrate picking assembly sucks the substrate of the flip chip through the substrate vacuum suction nozzle, the epitaxial layer vacuum suction nozzle stops sucking the epitaxial layer of the flip chip after the substrate vacuum suction nozzle sucks the substrate of the flip chip,
or, the epitaxial layer picking-up assembly in the step (4) sucks the epitaxial layer of the flip chip through the epitaxial layer vacuum suction nozzle to further suck up the flip chip, the translation mechanism drives the epitaxial layer vacuum suction nozzle to move to drive the flip chip to move so that the electrode of the flip chip corresponds to the position of a circuit on the receiving support, the substrate picking-up assembly sucks the substrate of the flip chip through the substrate vacuum suction nozzle, the epitaxial layer vacuum suction nozzle stops sucking the epitaxial layer of the flip chip after sucking the substrate of the flip chip by the substrate vacuum suction nozzle, and the rotation mechanism drives the substrate vacuum suction nozzle to rotate 180 degrees in a plane perpendicular to the film after the substrate vacuum suction nozzle sucks the flip chip, drives the flip chip to rotate 180 degrees in the plane perpendicular to the film, so that the electrode of the flip chip faces downwards and the substrate faces upwards;
and (6) stopping sucking the substrate of the flip chip by the substrate vacuum suction nozzle, placing the flip chip on a corresponding position on the receiving bracket, and enabling the electrode of the flip chip to be electrically communicated with the circuit on the receiving bracket.
Furthermore, the epitaxial layer pickup assembly further comprises an epitaxial layer die bonding arm, and the epitaxial layer die bonding arm is vertically and fixedly connected with the epitaxial layer vacuum suction nozzle; the substrate picking assembly also comprises a substrate die bonding arm, and the substrate die bonding arm is vertically and fixedly connected with the substrate vacuum suction nozzle;
the step (4) is that the epitaxial layer picking-up assembly attracts the epitaxial layer of the flip chip through the epitaxial layer vacuum suction nozzle to further attract the flip chip, the step (5) is that the rotating mechanism drives the epitaxial layer fixing arm to rotate 180 degrees in a plane vertical to the thin film to drive the epitaxial layer vacuum suction nozzle to rotate 180 degrees in the plane vertical to the thin film to further drive the flip chip to rotate 180 degrees in the plane vertical to the thin film to enable the electrode of the flip chip to face downwards and the substrate to face upwards, the substrate picking-up assembly attracts the substrate of the flip chip through the substrate vacuum suction nozzle, the epitaxial layer vacuum suction nozzle stops attracting the epitaxial layer of the flip chip after the substrate vacuum suction nozzle attracts the substrate of the flip chip, the translation mechanism drives the substrate fixing arm to move to drive the substrate vacuum suction nozzle to move to further drive the flip chip to move, and enable the electrode of the flip chip to correspond to the line,
or, the step (4) is that the epitaxial layer picking assembly attracts the epitaxial layer of the flip chip through the epitaxial layer vacuum suction nozzle to further attract the flip chip, the substrate picking assembly attracts the substrate of the flip chip through the substrate vacuum suction nozzle, the epitaxial layer vacuum suction nozzle stops attracting the epitaxial layer of the flip chip after the substrate vacuum suction nozzle attracts the substrate of the flip chip, the step (5) is that the rotating mechanism drives the substrate die bonding arm to rotate 180 degrees in a plane perpendicular to the thin film after the substrate vacuum suction nozzle attracts the flip chip, drives the substrate vacuum suction nozzle to rotate 180 degrees in the plane perpendicular to the thin film, further drives the flip chip to rotate 180 degrees in the plane perpendicular to the thin film, enables the electrode of the flip chip to face downwards and the substrate to face upwards, drives the substrate die bonding arm to move, drives the substrate vacuum suction nozzle to move, further drives the flip chip to move, and enables the electrode of the flip chip to correspond to the line position on the receiving support,
or, the step (4) is that the epitaxial layer picking assembly attracts the epitaxial layer of the flip chip through the epitaxial layer vacuum suction nozzle to further suck the flip chip, the step (5) is that the rotating mechanism drives the epitaxial layer die-bonding arm to rotate 180 degrees in a plane perpendicular to the thin film to drive the epitaxial layer vacuum suction nozzle to rotate 180 degrees in a plane perpendicular to the thin film to further drive the flip chip to rotate 180 degrees in a plane perpendicular to the thin film to enable the electrode of the flip chip to face downwards and the substrate to face upwards, the translation mechanism drives the epitaxial layer die-bonding arm to move to drive the epitaxial layer vacuum suction nozzle to move to further drive the flip chip to move, so that the electrode of the flip chip corresponds to the line position on the receiving bracket, the substrate picking assembly attracts the substrate of the flip chip through the substrate vacuum suction nozzle, and the epitaxial layer vacuum suction nozzle stops attracting the epitaxial layer of the flip chip after the substrate vacuum suction nozzle attracts,
or, the step (4) is that the epitaxial layer picking assembly attracts the epitaxial layer of the flip chip through the epitaxial layer vacuum suction nozzle to further attract the flip chip, the step (5) is that the translation mechanism drives the epitaxial layer die bonding arm to move to drive the epitaxial layer vacuum suction nozzle to move so as to drive the flip chip to move, so that the electrode of the flip chip corresponds to the circuit position on the receiving bracket, the substrate picking assembly attracts the substrate of the flip chip through the substrate vacuum suction nozzle, the epitaxial layer vacuum suction nozzle stops attracting the epitaxial layer of the flip chip after attracting the substrate of the flip chip by the substrate vacuum suction nozzle, the rotation mechanism drives the substrate die bonding arm to rotate 180 degrees in the plane perpendicular to the thin film after the substrate vacuum suction nozzle attracts the flip chip, the substrate vacuum suction nozzle rotates 180 degrees in the plane perpendicular to the thin film, so as to drive the flip chip to rotate 180 degrees in the plane perpendicular to the thin film, the electrodes of the flip chip are oriented downward and the substrate is oriented upward.
Further, the pick-up mechanism comprises an electrode pick-up assembly and a substrate pick-up assembly; the electrode pick-up assembly comprises an electrode vacuum nozzle; the substrate pick-up assembly comprises a substrate vacuum nozzle;
the step (4) is that the electrode picking assembly attracts the electrode of the flip chip through an electrode vacuum suction nozzle to further attract the flip chip, the step (5) is that the rotating mechanism drives the electrode vacuum suction nozzle to rotate 180 degrees in a plane vertical to the film to drive the flip chip to rotate 180 degrees in the plane vertical to the film to enable the electrode of the flip chip to face downwards and the substrate to face upwards, the substrate picking assembly attracts the substrate of the flip chip through a substrate vacuum suction nozzle, the electrode vacuum suction nozzle stops attracting the electrode of the flip chip after the substrate vacuum suction nozzle attracts the substrate of the flip chip, the translation mechanism drives the substrate vacuum suction nozzle to move to drive the flip chip to move, and the electrode of the flip chip corresponds to the line position on the receiving support,
or, the step (4) is that the electrode picking component attracts an electrode layer of the flip chip through an electrode vacuum suction nozzle to further attract the flip chip, the substrate picking component attracts a substrate of the flip chip through a substrate vacuum suction nozzle, the electrode vacuum suction nozzle stops attracting the electrode of the flip chip after the substrate vacuum suction nozzle attracts the substrate of the flip chip, the step (5) is that the rotating mechanism drives the substrate vacuum suction nozzle to rotate 180 degrees in a plane perpendicular to the film after the substrate vacuum suction nozzle attracts the flip chip, drives the flip chip to rotate 180 degrees in the plane perpendicular to the film, enables the electrode of the flip chip to face downwards and the substrate to face upwards, the translating mechanism drives the substrate vacuum suction nozzle to move, drives the flip chip to move, and enables the electrode of the flip chip to correspond to the line position on the receiving support,
or, the step (4) is that the electrode picking assembly attracts the electrode of the flip chip through an electrode vacuum suction nozzle to further attract the flip chip, the step (5) is that the rotating mechanism drives the electrode vacuum suction nozzle to rotate 180 degrees in a plane perpendicular to the film, drives the flip chip to rotate 180 degrees in the plane perpendicular to the film, enables the electrode of the flip chip to face downwards and the substrate to face upwards, the translation mechanism drives the electrode vacuum suction nozzle to move to drive the flip chip to move, enables the electrode of the flip chip to correspond to the circuit position on the receiving support, the substrate picking assembly attracts the substrate of the flip chip through the substrate vacuum suction nozzle, and the electrode vacuum suction nozzle stops attracting the electrode of the flip chip after the substrate vacuum suction nozzle attracts the substrate of the flip chip,
or, the step (4) is that the electrode picking assembly attracts the electrode of the flip chip through an electrode vacuum suction nozzle to further attract the flip chip, the step (5) is that the translation mechanism drives the electrode vacuum suction nozzle to move to drive the flip chip to move so that the electrode of the flip chip corresponds to the circuit position on the receiving support, the substrate picking assembly attracts the substrate of the flip chip through a substrate vacuum suction nozzle, the electrode vacuum suction nozzle stops attracting the epitaxial layer of the flip chip after the substrate vacuum suction nozzle attracts the substrate of the flip chip, and the rotating mechanism drives the substrate vacuum suction nozzle to rotate 180 degrees in the plane perpendicular to the thin film after the substrate vacuum suction nozzle attracts the flip chip, drives the flip chip to rotate 180 degrees in the plane perpendicular to the thin film, so that the electrode of the flip chip faces downwards and the substrate faces upwards;
and (6) stopping sucking the substrate of the flip chip by the substrate vacuum suction nozzle, placing the flip chip on a corresponding position on the receiving bracket, and enabling the electrode of the flip chip to be electrically communicated with the circuit on the receiving bracket.
Furthermore, the electrode picking assembly also comprises an electrode die bonding arm, and the electrode die bonding arm is vertically and fixedly connected with the electrode vacuum suction nozzle; the substrate pick-up assembly; the electrode picking assembly comprises a substrate die bonding arm, and the substrate die bonding arm is vertically and fixedly connected with the substrate vacuum suction nozzle;
the step (4) is that the electrode picking assembly attracts the electrode of the flip chip through an electrode vacuum suction nozzle to further attract the flip chip, the step (5) is that the rotating mechanism drives the electrode die bonding arm to rotate 180 degrees in a plane vertical to the film, drives the electrode vacuum suction nozzle to rotate 180 degrees in the plane vertical to the film, further drives the flip chip to rotate 180 degrees in the plane vertical to the film, so that the electrode of the flip chip faces downwards and the substrate faces upwards, the substrate picking assembly attracts the substrate of the flip chip through a substrate vacuum suction nozzle, the electrode vacuum suction nozzle stops attracting the electrode of the flip chip after the substrate vacuum suction nozzle attracts the substrate of the flip chip, the translation mechanism drives the substrate die bonding arm to move, drives the substrate vacuum suction nozzle to move, further drives the flip chip to move, so that the electrode of the flip chip corresponds to the line position on the receiving support,
or, the step (4) is that the electrode picking component attracts an electrode layer of the flip chip through an electrode vacuum suction nozzle to further attract the flip chip, the substrate picking component attracts a substrate of the flip chip through a substrate vacuum suction nozzle, the electrode vacuum suction nozzle stops attracting the electrode of the flip chip after the substrate vacuum suction nozzle attracts the substrate of the flip chip, the step (5) is that the rotating mechanism drives the substrate die bonding arm to rotate 180 degrees in a plane perpendicular to the thin film after the substrate vacuum suction nozzle attracts the flip chip, the vacuum suction nozzle is driven to rotate 180 degrees in the plane perpendicular to the thin film, the flip chip is driven to rotate 180 degrees in the plane perpendicular to the thin film, the electrode of the flip chip faces downwards, the substrate faces upwards, the translation mechanism drives the substrate die bonding arm to move, the substrate vacuum suction nozzle is driven to move, the flip chip is driven to move, and the electrode of the flip chip corresponds to a line position on the receiving support,
or, the step (4) is that the electrode picking assembly attracts the electrodes of the flip chip through an electrode vacuum suction nozzle, and then sucking up the flip chip, wherein the step (5) is that the rotating mechanism drives the electrode die bonding arm to rotate 180 degrees in a plane vertical to the film to drive the electrode vacuum suction nozzle to rotate 180 degrees in the plane vertical to the film, thereby driving the flip chip to rotate 180 degrees in a plane vertical to the film, enabling the electrode of the flip chip to face downwards and the substrate to face upwards, driving the electrode die bonding arm to move by the translation mechanism, driving the electrode vacuum suction nozzle to move, further driving the flip chip to move so that the electrodes of the flip chip correspond to the positions of the lines on the receiving support, the substrate pickup assembly sucking the substrate of the flip chip through the substrate vacuum suction nozzle, the electrode vacuum suction nozzle stopping sucking the electrodes of the flip chip after the substrate vacuum suction nozzle sucks the substrate of the flip chip,
or, the step (4) is that the electrode picking assembly attracts an electrode of the flip chip through an electrode vacuum suction nozzle to further attract the flip chip, the step (5) is that the translation mechanism drives the electrode die bonding arm to move to drive the electrode vacuum suction nozzle to move so as to drive the flip chip to move, so that the electrode of the flip chip corresponds to the circuit position on the receiving support, the substrate picking assembly attracts a substrate of the flip chip through a substrate vacuum suction nozzle, the electrode vacuum suction nozzle stops attracting an epitaxial layer of the flip chip after attracting the substrate of the flip chip by the substrate vacuum suction nozzle, the rotation mechanism drives the substrate die bonding arm to rotate 180 degrees in a plane perpendicular to the thin film after the substrate vacuum suction nozzle attracts the flip chip, the substrate vacuum suction nozzle rotates 180 degrees in the plane perpendicular to the thin film, so as to drive the flip chip to rotate 180 degrees in the plane perpendicular to the thin film, the electrode of the flip chip faces downwards, and the substrate faces upwards;
and (6) stopping sucking the substrate of the flip chip by the substrate vacuum suction nozzle, placing the flip chip on a corresponding position on the receiving bracket, and enabling the electrode of the flip chip to be electrically communicated with the circuit on the receiving bracket.
Further, the picking mechanism includes a side picking assembly; the side pick assembly comprises a side pick head for clamping a side of the flip chip;
the side face picking assembly clamps the side face of the flip chip through a side face picking head so as to pick the flip chip; the step (5) is that the rotating mechanism drives the side pick-up head to rotate 180 degrees in a plane vertical to the film, drives the flip chip to rotate 180 degrees in the plane vertical to the film, and leads the electrode of the flip chip to face downwards and the substrate to face upwards; the translation mechanism drives the side pick-up head to move and drives the flip chip to move, so that the electrode of the flip chip corresponds to the position of the circuit on the receiving bracket; and (6) stopping clamping the side face of the flip chip by the side face pick-up head, placing the flip chip on a corresponding position on the receiving support, and enabling the electrode of the flip chip to be electrically communicated with the circuit on the receiving support.
Further, the side picking assembly further comprises a side die bonding arm, and the side die bonding arm is vertically and fixedly connected with the side picking head;
the step (5) is that the rotating mechanism drives the side pick-up head to rotate 180 degrees in a plane vertical to the film, drives the flip chip to rotate 180 degrees in the plane vertical to the film, and leads the electrode of the flip chip to face downwards and the substrate to face upwards; the translation mechanism drives the side die bonding arm to move, drives the side pick-up head to move, and further drives the flip chip to move, so that the electrode of the flip chip corresponds to the circuit position on the receiving support.
The invention has the beneficial effects that:
according to the invention, the substrate of the flip chip is pasted on the film, the thimble upwards pushes the flip chip through the substrate pushing the flip chip, the epitaxial layer and the electrode of the flip chip cannot be damaged, the substrate is made of a material harder than the epitaxial layer and the electrode, and the risk of being damaged by the thimble is low. Furthermore, the epitaxial layer of the flip chip is sucked by the epitaxial layer vacuum suction nozzle, the substrate of the flip chip is sucked by the substrate vacuum suction nozzle, the epitaxial layer vacuum suction nozzle or the substrate vacuum suction nozzle is rotated by 180 degrees by the rotating mechanism, the flip chip is further rotated by 180 degrees, and the electrode of the flip chip faces downwards. Furthermore, the vacuum suction nozzles of the epitaxial layers suck the epitaxial layers of the flip chip, so that the flip chip is sucked more stably; further, the electrode vacuum suction nozzle is used for sucking the electrode of the flip chip, the substrate vacuum suction nozzle is used for sucking the substrate of the flip chip, the electrode vacuum suction nozzle or the substrate vacuum suction nozzle is rotated by 180 degrees through the rotating mechanism, the flip chip is further rotated by 180 degrees, and the electrode of the flip chip faces downwards. Furthermore, the electrodes of the flip chip are sucked by the vacuum suction nozzles of the plurality of electrodes, so that the flip chip is sucked more stably; furthermore, the substrate of the flip chip is sucked by the vacuum suction nozzles of the plurality of substrates, so that the flip chip is sucked more stably; furthermore, the side face of the flip chip is clamped by the side face picking head, the side face picking head is rotated by 180 degrees by the rotating mechanism, the flip chip is further rotated by 180 degrees, and the electrode of the flip chip faces downwards.
Description of the drawings
In order to more clearly illustrate the embodiments of the present invention, the drawings used in the embodiments will be briefly described below. The drawings in the following description are only embodiments of the invention and other drawings may be derived from those drawings by a person skilled in the art without inventive effort.
FIG. 1 is a diagram illustrating a flip chip substrate attached to a film according to an embodiment of the present invention;
FIG. 2 is a diagram of a state of a substrate with a thimble corresponding to a flip chip according to an embodiment of the present invention;
FIG. 3 is a diagram illustrating a state where the ejector pin ejects the substrate of the flip chip and the vacuum nozzle of the epitaxial layer sucks the epitaxial layer of the flip chip according to an embodiment of the present invention;
FIG. 4 is a diagram illustrating a state in which a rotation mechanism drives a vacuum nozzle of an epitaxial layer to rotate 180 degrees and drives a flip chip to rotate 180 degrees, and the vacuum nozzle of a substrate sucks a substrate of the flip chip according to an embodiment of the invention;
FIG. 5 is a diagram illustrating a state where a translation mechanism drives the substrate vacuum nozzle to move, so that the electrodes of the flip chip move to positions corresponding to the lines on the receiving frame according to an embodiment of the present invention;
FIG. 6 is a diagram illustrating a vacuum chuck for sucking the epitaxial layer and a vacuum chuck for sucking the substrate of the flip chip according to an embodiment of the present invention;
FIG. 7 is a diagram of a second rotating mechanism driving the substrate vacuum nozzle to rotate 180 degrees, driving the flip chip to rotate 180 degrees, and a translating mechanism driving the substrate vacuum nozzle to move, so that the electrode of the flip chip moves to a position corresponding to the line on the receiving support according to the second embodiment of the present invention;
FIG. 8 is a diagram of a state in which a substrate of a flip chip is lifted by three ejector pins and an electrode vacuum suction nozzle sucks up an electrode of the flip chip according to an embodiment of the present invention;
FIG. 9 is a diagram of a state in which a five-pin lift-up of the flip-chip substrate and a side pick-up head clamping the side of the flip-chip according to an embodiment of the present invention;
FIG. 10 is a diagram of a state in which a five-rotation mechanism drives a side pick-up head to rotate 180 degrees, drives a flip chip to rotate 180 degrees, and a translation mechanism drives the side pick-up head to move, so that an electrode of the flip chip moves to a position corresponding to a line on a receiving support in accordance with an embodiment of the present invention;
description of the drawings: 1, flip chip; 11, a substrate; 12, an epitaxial layer; 13, an electrode; 131, an electrode; 132, an electrode; 2, a film; 3, flip chip bearing platform; 4, a thimble; 51, a pick-up mechanism; 511, an epitaxial layer pickup assembly; 512, a substrate pick-up assembly; 513, an electrode pick-up assembly; 514, a side pick-up assembly; 511a, vacuum nozzle for epitaxial layer; 511b, a die bonding arm for epitaxial layer; 512a, vacuum chuck for epitaxial layer; 512b, a die bonding arm for the epitaxial layer; 513a, an electrode vacuum nozzle; 513b, an electrode vacuum nozzle; 513c, an electrode die bonding arm; 514a, side pick-up head; 514b, side pick-up head; 514c, side die attach arm; 6, receiving a bracket; 61, lines.
(specific embodiments) in all cases
The present invention will be described in detail below with reference to the accompanying drawings.
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention will be described in further detail with reference to the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
Example 1
As shown in fig. 1 to 5, the flip chip die bonding apparatus provided in this embodiment includes a flip chip 1, a film 2, a flip chip carrier 3, a thimble 4, a thimble driving device (not shown), a picking mechanism 51, a rotating mechanism (not shown), a translating mechanism (not shown), and a receiving frame 6. As shown in fig. 1 to 5, the flip chip 1 includes a substrate 11, an epitaxial layer 12, and an electrode 13. The receiving bracket 6 is provided with a line 61.
As shown in fig. 1, the film 2 is disposed on the flip chip carrier 3, the film 2 has viscosity, the substrate 11 of the flip chip 1 is adhered to a side of the film 2 away from the flip chip carrier 3, and the epitaxial layer 12 and the electrode 13 are sequentially disposed above the substrate 11; as shown in fig. 2, the flip chip carrier 3 is provided with a pin receiving hole 31, and the substrate 11 of the flip chip 1 to be jacked corresponds to the pin receiving hole 31; the driving output end of the thimble driving device is connected with the driving input end of the thimble 4, and is used for driving the thimble 4 to move up and down in the thimble accommodating hole 31.
The picking mechanism 51 is used for picking up the flip chip 1 jacked up by the thimble 4 and putting down the flip chip 1; the rotating mechanism is used for rotating the flip chip 1 picked up by the picking mechanism 51 by 180 degrees in a plane vertical to the film 2, so that the electrode 13 of the flip chip 1 faces downwards; the translation mechanism is used for moving the flip chip 1 picked up by the picking mechanism 51 to a position corresponding to the line 61 on the receiving support 6; the receiving holder 6 is for receiving the flip chip 1 lowered by the pick-up mechanism 51, and the electrodes 13 of the flip chip 1 are electrically conducted to the wiring 61 on the receiving holder 6.
As shown in fig. 1 to 5, in the present embodiment, the pick-up mechanism 51 includes an epitaxial layer pick-up assembly 511 and a substrate pick-up assembly 512; the epitaxial layer pickup assembly 511 comprises an epitaxial layer vacuum suction nozzle 511a and an epitaxial layer die bonding arm 511b, the epitaxial layer die bonding arm 511b is vertically and fixedly connected with the epitaxial layer vacuum suction nozzle 511, a rotation output shaft of the rotation mechanism is connected with a rotation input shaft of the epitaxial layer die bonding arm 511b, and the rotation output shaft is used for driving the epitaxial layer die bonding arm 511b to rotate 180 degrees in a plane perpendicular to the thin film 2, driving the epitaxial layer vacuum suction nozzle 511a to rotate 180 degrees in a plane perpendicular to the thin film 2, and further enabling the flip chip 1 picked up by the epitaxial layer vacuum suction nozzle 511a to rotate 180 degrees in a plane perpendicular to the thin film 2; the substrate picking assembly 512 comprises a substrate vacuum suction nozzle 512a and a substrate die bonding arm 512b, the substrate die bonding arm 512b is vertically and fixedly connected with the substrate vacuum suction nozzle 512a, and a moving output shaft of the translation mechanism is connected with a moving input shaft of the substrate die bonding arm 512b and used for driving the substrate die bonding arm 512b to move so as to drive the substrate vacuum suction nozzle 512a to move and further drive the flip chip 1 picked by the substrate vacuum suction nozzle 512a to move.
The working principle of the flip chip die bonding device is as follows:
the flip chip 1 is placed on the film 2, and the substrate 11 of the flip chip 1 is adhered to one side of the film 2 far away from the flip chip bearing table 3; the thimble driving device drives the thimble 4 to move upwards, the thimble 4 pushes the substrate 11 of the flip chip 1 upwards, and when the force of the thimble 4 pushing the flip chip 1 upwards is greater than the adhesive force of the film 2 to the substrate 11 of the flip chip 1, the substrate 11 of the flip chip 1 is separated from the film 2; the epitaxial layer pickup assembly 511 sucks up the flip chip 1 through the epitaxial layer vacuum suction nozzle 511a after the substrate 11 of the flip chip 1 is separated from the film 2; after the epitaxial layer vacuum suction nozzle 511a sucks up the flip chip 1, the rotating mechanism drives the epitaxial layer die bonding arm 511b to rotate 180 degrees in a plane perpendicular to the thin film 2, drives the epitaxial layer vacuum suction nozzle 511a to rotate 180 degrees in a plane perpendicular to the thin film 2, further drives the flip chip 1 to rotate 180 degrees in a plane perpendicular to the thin film 2, enables the electrode 13 of the flip chip 1 to face downwards and the substrate 11 to face upwards; the substrate pick-up assembly 512 sucks the substrate 11 of the flip chip 1 through the substrate vacuum suction nozzle 512a after the electrode 13 of the flip chip faces downwards, and the epitaxial layer vacuum suction nozzle 511a stops sucking the epitaxial layer 12 of the flip chip 1 after the substrate vacuum suction nozzle 512a sucks the substrate 11 of the flip chip 1; the translation mechanism drives the substrate die bonding arm 512b to move after the substrate vacuum suction nozzle 512a sucks up the flip chip 1, drives the substrate vacuum suction nozzle 512a to move, and further drives the flip chip 1 to move, so that the electrode 13 of the flip chip 1 corresponds to the position of the circuit 61 on the receiving support 6; the substrate vacuum suction nozzle 512a stops sucking the substrate 11 of the flip chip 1 after the flip chip 1 is moved to the corresponding position, places the flip chip 1 at the corresponding position on the receiving support 6, and electrically conducts the electrodes 13 of the flip chip 1 with the wiring 61 on the receiving support 6.
In this embodiment, the film 2 is a blue film.
In the embodiment, the thimble 4 is responsible for jacking up the head of the flip chip 1 and has a trapezoidal structure, so that compared with a pointed structure, the possibility of damaging the substrate 11 of the flip chip 1 by jacking is reduced; in other embodiments, the ejector pin 4 is responsible for ejecting the head of the flip chip 1 to be a rounded corner, a spherical shape, or the like.
In this embodiment, the thimble driving device is a motor.
In the present embodiment, the number of the vacuum nozzles 511a for picking up the epitaxial layers in the epitaxial layer pick-up assembly 511 is one, corresponding to the middle position of the epitaxial layer 12 of the flip chip 1; in other embodiments, the number of the epi layer vacuum nozzles 511a in the epi layer pickup assembly 511 is plural, so as to more stably pick up the flip chip 1.
In the present embodiment, the number of the substrate vacuum suction nozzles 512a in the substrate pickup assembly 512 is one, corresponding to the middle position of the substrate 11 of the flip chip 1; in other embodiments, the number of the substrate vacuum nozzles 512a in the substrate pick-up assembly 512 is plural for sucking up the flip-chip 1 more stably.
The flip chip die bonding method provided by the embodiment comprises the following steps:
(1) the substrate 11 of the flip chip 1 is stuck on the film 2;
(2) the thimble 4 is driven to move upwards by the thimble driving device, and the thimble 4 pushes the substrate 11 of the flip chip 1 upwards;
(3) when the force of the thimble 4 pushing the flip chip 1 upwards is larger than the adhesive force of the film 2 to the substrate 11 of the flip chip 1, the substrate 11 of the flip chip 1 is separated from the film 2;
(4) the pick-up mechanism 51 picks up the flip chip 1 separated from the film 2;
(5) the rotating mechanism rotates the flip chip 1 picked up by the picking mechanism 51 by 180 degrees in a plane vertical to the film, so that the electrode 13 of the flip chip 1 faces downwards and the substrate 11 faces upwards; the translation mechanism moves the flip-chip 1 picked up by the pick-up mechanism 51 to a position corresponding to the line 61 on the receiving support 6;
(6) the flip-chip pick-up device 51 places the flip-chip 1 in a corresponding position on the receiving support 6.
In this embodiment, in step (4), the epitaxial layer pickup assembly 511 sucks the epitaxial layer 12 of the flip chip 1 through the epitaxial layer vacuum nozzle 511a, so as to suck up the flip chip 1; step (5) the rotating mechanism drives the epitaxial layer die bonding arm 511b to rotate 180 degrees in a plane perpendicular to the thin film 2, drives the epitaxial layer vacuum suction nozzle 511a to rotate 180 degrees in a plane perpendicular to the thin film 2, further drives the flip chip 1 to rotate 180 degrees in a plane perpendicular to the thin film 2, and enables the electrode 13 of the flip chip 1 to face downwards and the substrate 11 to face upwards; the substrate picking assembly 512 attracts the substrate 11 of the flip chip 1 through a substrate vacuum suction nozzle 512a, the epitaxial layer vacuum suction nozzle 511a stops attracting the epitaxial layer 12 of the flip chip 1 after the substrate vacuum suction nozzle 512a attracts the substrate 11 of the flip chip 1, the translation mechanism drives the substrate die bonding arm 512b to move, the substrate vacuum suction nozzle 512a is driven to move, the flip chip 1 is driven to move, and the electrode 13 of the flip chip 1 corresponds to the position of the circuit 61 on the receiving support 6; the step (6) is that the substrate vacuum suction nozzle 512a stops sucking the substrate 11 of the flip chip 1, and places the flip chip 1 at the corresponding position on the receiving support 6, so that the electrodes 13 of the flip chip 1 are electrically conducted with the wiring 61 on the receiving support 6.
Example 2
As shown in fig. 6 and 7, the present embodiment is different from the first embodiment in that: the rotation output shaft of the rotation mechanism is connected with the rotation input shaft of the substrate die bonding arm 512b, and the movement output shaft of the translation mechanism is connected with the movement output shaft of the substrate die bonding arm 512 b.
In the present embodiment, the step (4) of the flip chip die attach method is that the epitaxial layer pickup assembly 511 sucks the epitaxial layer 12 of the flip chip 1 through the epitaxial layer vacuum nozzle 511a, and further sucks up the flip chip 1, the substrate pickup assembly 512 sucks the substrate 11 of the flip chip 1 through the substrate vacuum nozzle 512a, and the epitaxial layer vacuum nozzle 511a stops sucking the epitaxial layer 12 of the flip chip 1 after the substrate vacuum nozzle 512a sucks the substrate 11 of the flip chip 1; step (5) after the substrate vacuum suction nozzle 512a sucks up the flip chip 1, the rotating mechanism drives the substrate die bonding arm 512b to rotate 180 degrees in a plane vertical to the film 2, drives the substrate vacuum suction nozzle 512a to rotate 180 degrees in the plane vertical to the film 2, further drives the flip chip 1 to rotate 180 degrees in the plane vertical to the film 2, and enables the electrode 13 of the flip chip 1 to face downwards and the substrate 11 to face upwards; the translation mechanism drives the substrate die bonding arm 512b to move, drives the substrate vacuum suction nozzle 512a to move, and further drives the flip chip 1 to move, so that the electrode 13 of the flip chip 1 corresponds to the circuit 61 on the receiving support 6.
In other embodiments, the moving output shaft of the translation mechanism is connected with the moving input shaft of the wafer bonding arm of the epitaxial layer.
In other embodiments, the moving output shaft of the translation mechanism is connected with the moving output shaft of the epitaxial layer die bonding arm; the rotating output shaft of the rotating mechanism is connected with the moving input end of the substrate die bonding arm.
Example 3
As shown in fig. 8, the present embodiment is different from the first embodiment in that: the pick-up mechanism includes an electrode pick-up assembly 513; the electrode pick-up assembly 513 includes two electrode vacuum nozzles 513a, 513b and an electrode die bonding arm 513 c; the electrode vacuum nozzles 513a and 513b are parallel to each other and respectively correspond to the two electrodes 131 and 132 of the flip chip 1, and are used for attracting the two electrodes 131 and 132 of the flip chip 1 and further attracting the flip chip 1; the electrode die bonding arm 513c is vertically and fixedly connected with the electrode vacuum suction nozzles 513a and 513 b; the rotation output shaft of the rotation mechanism is fixedly connected with the rotation input shaft of the electrode die bonding arm 513c, and is used for driving the electrode die bonding arm 513c to rotate 180 degrees in a plane vertical to the thin film 2, driving the electrode vacuum suction nozzles 513a and 513b to rotate 180 degrees in the plane vertical to the thin film 2, and further driving the flip chip 1 to rotate 180 degrees in the plane vertical to the thin film 2.
In the present embodiment, the electrodes 131 and 132 are symmetrically disposed at both ends of the flip chip 1, respectively, and the electrode picking assembly 513 picks up the electrodes 131 and 132 of the flip chip by the electrode vacuum nozzles 513a and 513b, respectively, so that the flip chip 1 can be picked up more stably.
In the present embodiment, the step (4) of the flip chip die attach method is that the electrode picking assembly 513 sucks the electrodes 131 and 132 of the flip chip 1 by the electrode vacuum nozzles 513a and 513b, and further sucks up the flip chip 1; step (5) driving the electrode die bonding arm 513c to rotate 180 degrees in a plane perpendicular to the thin film 2 by the rotating mechanism, driving the electrode vacuum suction nozzles 513a and 513b to rotate 180 degrees in a plane perpendicular to the thin film 2, further driving the flip chip 1 to rotate 180 degrees in a plane perpendicular to the thin film 2, and enabling the electrode 13 of the flip chip 1 to face downwards and the substrate 11 to face upwards; the substrate picking assembly 512 attracts the substrate 11 of the flip chip 1 through the substrate vacuum suction nozzle 512a, the electrode vacuum suction nozzles 513a and 513b stop attracting the electrode 13 of the flip chip 1 after the substrate vacuum suction nozzle 512a attracts the substrate 11 of the flip chip 1, the translation mechanism drives the substrate die bonding arm 512b to move, the substrate vacuum suction nozzle 512a is driven to move, the flip chip 1 is driven to move, and the electrode 13 of the flip chip 1 corresponds to the position of the circuit 61 on the receiving support 6.
Example 4
The difference between this embodiment and the real-time embodiment three is that: the rotation output shaft of the rotation mechanism is connected with the rotation input shaft of the substrate die bonding arm 512b, and the movement output shaft of the translation mechanism is connected with the movement output shaft of the substrate die bonding arm 512 b.
In the present embodiment, the step (4) of the flip chip die attach method is that the electrode picking assembly 513 sucks the electrodes 131 and 132 of the flip chip 1 by the electrode vacuum nozzles 513a and 513b, and further sucks up the flip chip 1; the substrate pick-up assembly 512 sucks the substrate 11 of the flip-chip 1 through the substrate vacuum suction nozzle 512a, and the electrode vacuum suction nozzles 513a, 513b stop sucking the electrode 13 of the flip-chip 1 after the substrate vacuum suction nozzle 512a sucks the substrate 11 of the flip-chip 1; step (5) the rotating mechanism drives the substrate die bonding arm 512b to rotate 180 degrees in a plane vertical to the film 2, drives the substrate vacuum suction nozzle 512a to rotate 180 degrees in a plane vertical to the film 2, further drives the flip chip 1 to rotate 180 degrees in a plane vertical to the film 2, and enables the electrode 13 of the flip chip 1 to face downwards and the substrate 11 to face upwards; the translation mechanism drives the substrate die bonding arm 512b to move, drives the substrate vacuum suction nozzle 512a to move, and further drives the flip chip 1 to move, so that the electrode 13 of the flip chip 1 corresponds to the circuit 61 on the receiving support 6.
In other embodiments, the moving output shaft of the translation mechanism is connected with the moving input shaft of the electrode die bonding arm.
In other embodiments, a moving output shaft of the translation mechanism is connected with a moving output shaft of the electrode die bonding arm; the rotating output shaft of the rotating mechanism is connected with the moving input end of the substrate die bonding arm.
Example 5
As shown in fig. 9 and 10, the present embodiment differs from the first embodiment in that: the pick-up mechanism includes a side pick-up assembly 514 for picking up the side of the flip-chip 1 and thus picking up the flip-chip 1; side pick-up assembly 511 includes side pick-up heads 514a, 514b and side die attach arm 514 c; the side pick-up heads 514a and 514b respectively correspond to two opposite sides of the flip chip 1 and are used for clamping the two opposite sides of the flip chip 1 so as to clamp the flip chip 1; the side die bonding arm 514c is vertically and fixedly connected with the side pick-up heads 514a and 514 b; the rotating mechanism comprises two rotating output shafts which are respectively connected with the rotating input shafts of the side pick-up heads 514a and 514b and are used for driving the side pick-up heads 514a and 514b to rotate 180 degrees in a plane vertical to the film 2 and driving the flip chip 1 to rotate 180 degrees in the plane vertical to the film 2; the moving output shaft of the translation mechanism is connected with the moving input shaft of the side die bonding arm 514c, and is used for driving the side die bonding arm 514c to move, driving the side pick-up heads 514a and 514b to move, and further driving the flip chip 1 to move.
In this embodiment, the flip chip die bonding method includes the steps of (4) clamping the side of the flip chip 1 by the side pick-up assembly 511 via the side pick-up heads 514a and 514b, and further clamping the flip chip 1; step (5) driving the side pick-up heads 514a and 514b to rotate 180 degrees in a plane vertical to the film 2 by the rotating mechanism, driving the flip chip 1 to rotate 180 degrees in a plane vertical to the film 2, and enabling the electrode 13 of the flip chip 1 to face downwards and the substrate 11 to face upwards; the translation mechanism drives the side die bonding arm 514c to move, drives the side pick-up heads 514a and 514b to move, and drives the flip chip 1 to move, so that the electrode 13 of the flip chip 1 corresponds to the position of the circuit 61 on the receiving bracket 6; step (6) is that the side pick-up heads 514a, 514b stop clamping the sides of the flip-chip 1, and place the flip-chip 1 at the corresponding position on the receiving support 6, so that the electrodes 13 of the flip-chip 1 are electrically conducted with the traces 61 on the receiving support 6.
The above embodiments are only preferred embodiments of the present invention, and the protection scope of the present invention is not limited to the above embodiments, and all technical solutions belonging to the idea of the present invention belong to the protection scope of the present invention. It should be noted that modifications and embellishments within the scope of the invention may occur to those skilled in the art without departing from the principle of the invention, and are considered to be within the scope of the invention.

Claims (16)

1. A flip chip die attach apparatus, comprising: the device comprises a flip chip, a film, a bearing table, a thimble driving device and a receiving bracket; the flip chip comprises a substrate, an epitaxial layer and an electrode; the film is fixedly arranged on the bearing table, and the bearing table is provided with a thimble accommodating hole; the film has viscosity, and the flip chip is adhered to the upper surface of the film; the ejector pins move up and down in the ejector pin accommodating holes under the driving of the ejector pin driving device, and the flip chip is jacked up on the lower surface of the film; the method is characterized in that: the substrate of the flip chip is adhered to the upper surface of the film, and the ejector pin is positioned below the substrate of the flip chip; the flip chip die bonding device also comprises a pickup mechanism, a rotating mechanism, a translation mechanism and a receiving bracket; the picking mechanism picks up the jacked flip chip or puts down the flip chip; the rotating mechanism rotates the flip chip picked up by the picking mechanism by 180 degrees in a plane vertical to the film, so that the electrode of the flip chip faces downwards; the translation mechanism is used for moving the flip chip picked by the picking mechanism to a position corresponding to the line on the receiving bracket; the receiving bracket is used for receiving the flip chip; the receiving bracket is provided with a circuit which is used for being electrically conducted with the electrode of the flip chip;
the electrode of the flip chip on the film faces upwards; the electrode of the flip chip on the receiving support faces downwards, and the receiving support is positioned below the flip chip;
the picking mechanism comprises a side picking assembly; the side pick assembly comprises a side pick head for clamping a side of the flip chip; a rotating output shaft of the rotating mechanism is connected with a rotating input shaft of the side pick-up head and is used for driving the side pick-up head to rotate 180 degrees in a plane vertical to the film; a moving output shaft of the translation mechanism is connected with a moving input shaft of the side picking assembly and is used for driving the side picking head to move;
or, the picking mechanism comprises an epitaxial layer picking assembly and a substrate picking assembly; the rotating output end of the rotating mechanism is connected with the rotating input end of the epitaxial layer picking assembly and is used for driving the epitaxial layer picking assembly to rotate 180 degrees in a plane vertical to the thin film, or the rotating output end of the rotating mechanism is connected with the rotating input end of the substrate picking assembly and is used for driving the substrate picking assembly to rotate 180 degrees in the plane vertical to the thin film; the moving output end of the translation mechanism is connected with the moving input end of the epitaxial layer pickup assembly and is used for driving the epitaxial layer pickup assembly to move, or the moving output end of the translation mechanism is connected with the moving input end of the substrate pickup assembly and is used for driving the substrate pickup assembly to move;
or, the pick-up mechanism comprises an electrode pick-up assembly and a substrate pick-up assembly; the electrode picking assembly corresponds to the two electrodes of the flip chip and is used for attracting the two electrodes of the flip chip; the substrate picking assembly corresponds to the substrate of the flip chip and is used for attracting the substrate of the flip chip; the rotary output end of the rotary mechanism is connected with the rotary input end of the electrode picking assembly and is used for driving the electrode picking assembly to rotate 180 degrees in a plane vertical to the thin film, or the rotary output end of the rotary mechanism is connected with the rotary input end of the substrate picking assembly and is used for driving the substrate picking assembly to rotate 180 degrees in the plane vertical to the thin film; and the moving output end of the translation mechanism is connected with the moving input end of the electrode picking assembly and is used for driving the electrode picking assembly to move, or the moving output end of the translation mechanism is connected with the moving input end of the substrate picking assembly and is used for driving the substrate picking assembly to move.
2. The flip chip die attach apparatus of claim 1, wherein: the epitaxial layer pickup assembly comprises an epitaxial layer vacuum suction nozzle, and the epitaxial layer vacuum suction nozzle corresponds to the position of the epitaxial layer of the flip chip and is used for sucking the epitaxial layer of the flip chip; the substrate picking assembly comprises a substrate vacuum suction nozzle, and the substrate vacuum suction nozzle corresponds to the position of the substrate of the flip chip and is used for sucking the substrate of the flip chip; the rotating output end of the rotating mechanism is connected with the rotating input end of the epitaxial layer picking assembly and is used for driving the epitaxial layer vacuum suction nozzle to rotate 180 degrees in a plane vertical to the thin film, or the rotating output end of the rotating mechanism is connected with the rotating input end of the substrate picking assembly and is used for driving the substrate vacuum suction nozzle to rotate 180 degrees in the plane vertical to the thin film; the moving output end of the translation mechanism is connected with the moving input end of the epitaxial layer pickup assembly and used for driving the epitaxial layer vacuum suction nozzle to move, or the moving output end of the translation mechanism is connected with the moving input end of the substrate pickup assembly and used for driving the substrate vacuum suction nozzle to move.
3. The flip chip die attach apparatus of claim 2, wherein: the epitaxial layer pickup assembly further comprises an epitaxial layer die bonding arm, and the epitaxial layer die bonding arm is vertically and fixedly connected with the epitaxial layer vacuum suction nozzle; the substrate picking assembly also comprises a substrate die bonding arm, and the substrate die bonding arm is vertically and fixedly connected with the substrate vacuum suction nozzle; the rotating output end of the rotating mechanism is connected with the rotating input end of the epitaxial layer die bonding arm, or the rotating output end of the rotating mechanism is connected with the rotating input end of the substrate die bonding arm; and the moving output end of the translation mechanism is connected with the moving input end of the crystal fixing arm of the epitaxial layer, or the moving output end of the translation mechanism is connected with the moving input end of the crystal fixing arm of the substrate.
4. The flip chip die attach apparatus of claim 2, wherein: the epitaxial layer pickup assembly comprises a plurality of epitaxial layer vacuum nozzles.
5. The flip chip die attach apparatus of claim 1, wherein: the electrode picking assembly comprises an electrode vacuum suction nozzle, the electrode vacuum suction nozzle corresponds to the two electrodes of the flip chip and is used for sucking the two electrodes of the flip chip; the substrate picking assembly comprises a substrate vacuum suction nozzle, the substrate vacuum suction nozzle corresponds to the substrate of the flip chip and is used for sucking the substrate of the flip chip; the rotary output end of the rotary mechanism is connected with the rotary input end of the electrode picking assembly and is used for driving the electrode vacuum suction nozzle to rotate 180 degrees in a plane vertical to the thin film, or the rotary output end of the rotary mechanism is connected with the rotary input end of the substrate picking assembly and is used for driving the substrate vacuum suction nozzle to rotate 180 degrees in the plane vertical to the thin film; and the moving output end of the translation mechanism is connected with the moving input end of the electrode picking assembly and is used for driving the electrode vacuum suction nozzle to move, or the moving output end of the translation mechanism is connected with the moving input end of the substrate picking assembly and is used for driving the substrate vacuum suction nozzle to move.
6. The flip chip die attach apparatus of claim 5, wherein: the electrode picking assembly also comprises an electrode die bonding arm, and the electrode die bonding arm is vertically and fixedly connected with the electrode vacuum suction nozzle; the substrate pick-up assembly; the electrode picking assembly comprises a substrate die bonding arm, and the substrate die bonding arm is vertically and fixedly connected with the substrate vacuum suction nozzle; the rotary output end of the rotary mechanism is connected with the rotary input end of the electrode die bonding arm, or the rotary output end of the rotary mechanism is connected with the rotary input end of the substrate die bonding arm; and the moving output end of the translation mechanism is connected with the moving input end of the electrode die bonding arm, or the moving output end of the translation mechanism is connected with the moving input end of the substrate die bonding arm.
7. The flip chip die attach apparatus of claim 5, wherein: the electrode picking assembly comprises an even number of symmetrically arranged electrode vacuum suction nozzles for attracting the two electrodes of the flip chip.
8. The flip chip die attach apparatus according to any one of claims 2 to 7, wherein: the substrate pick-up assembly includes a plurality of substrate vacuum nozzles.
9. The flip chip die attach apparatus of claim 1, wherein: the side picking assembly further comprises a side die bonding arm, and the side die bonding arm is vertically and fixedly connected with the side picking head; and a moving output shaft of the translation mechanism is connected with a moving input shaft of the side die bonding arm.
10. A flip chip die bonding method, characterized in that the flip chip die bonding apparatus of claim 1 is used; the die bonding method comprises the following steps: (1) adhering a substrate of the flip chip to the upper surface of the film; (2) the thimble is driven to move upwards by the thimble driving device, and the thimble upwards pushes the substrate of the flip chip; (3) when the force of the ejector pin pushing the flip chip upwards is larger than the adhesive force of the film to the substrate of the flip chip, the substrate of the flip chip is separated from the film; (4) the picking mechanism picks up the flip chip separated from the film; (5) the rotating mechanism rotates the flip chip picked up by the picking mechanism by 180 degrees in a plane vertical to the film, so that the electrode of the flip chip faces downwards and the substrate faces upwards; the translation mechanism moves the flip chip picked by the picking mechanism to a position corresponding to the circuit on the receiving bracket; (6) the flip chip picking device puts the flip chip on the corresponding position on the receiving bracket.
11. The flip chip die bonding method according to claim 10, wherein: the picking mechanism comprises an epitaxial layer picking assembly and a substrate picking assembly; the epitaxial layer pickup assembly comprises an epitaxial layer vacuum nozzle; the substrate pick-up assembly comprises a substrate vacuum nozzle;
the step (4) is that the epitaxial layer picking assembly attracts the epitaxial layer of the flip chip through the epitaxial layer vacuum suction nozzle to further attract the flip chip, the step (5) is that the rotating mechanism drives the epitaxial layer vacuum suction nozzle to rotate 180 degrees in a plane vertical to the thin film to drive the flip chip to rotate 180 degrees in the plane vertical to the thin film to enable the electrode of the flip chip to face downwards and the substrate to face upwards, the substrate picking assembly attracts the substrate of the flip chip through the substrate vacuum suction nozzle, the epitaxial layer vacuum suction nozzle stops attracting the epitaxial layer of the flip chip after attracting the substrate of the flip chip by the substrate vacuum suction nozzle, the translation mechanism drives the substrate vacuum suction nozzle to move to drive the flip chip to move, and the electrode of the flip chip is enabled to correspond to the line position on the receiving support,
or, the step (4) is that the epitaxial layer picking assembly attracts the epitaxial layer of the flip chip through the epitaxial layer vacuum suction nozzle to further attract the flip chip, the substrate picking assembly attracts the substrate of the flip chip through the substrate vacuum suction nozzle, the epitaxial layer vacuum suction nozzle stops attracting the epitaxial layer of the flip chip after the substrate vacuum suction nozzle attracts the substrate of the flip chip, the step (5) is that the rotating mechanism drives the substrate vacuum suction nozzle to rotate 180 degrees in a plane perpendicular to the thin film after the substrate vacuum suction nozzle attracts the flip chip, drives the flip chip to rotate 180 degrees in the plane perpendicular to the thin film, enables the electrode of the flip chip to face downwards and the substrate to face upwards, the translation mechanism drives the substrate vacuum suction nozzle to move to drive the flip chip to move, and enables the electrode of the flip chip to correspond to the circuit position on the receiving support,
or, the epitaxial layer picking assembly sucks the epitaxial layer of the flip chip through the epitaxial layer vacuum suction nozzle in the step (4) to further suck the flip chip, the rotation mechanism drives the epitaxial layer vacuum suction nozzle to rotate 180 degrees in the plane vertical to the film to drive the flip chip to rotate 180 degrees in the plane vertical to the film to enable the electrode of the flip chip to face downwards and the substrate to face upwards, the translation mechanism drives the epitaxial layer vacuum suction nozzle to move to drive the flip chip to move to enable the electrode of the flip chip to correspond to the circuit position on the receiving support, the substrate picking assembly sucks the substrate of the flip chip through the substrate vacuum suction nozzle, the epitaxial layer vacuum suction nozzle stops sucking the epitaxial layer of the flip chip after the substrate vacuum suction nozzle sucks the substrate of the flip chip,
or, the epitaxial layer picking-up assembly in the step (4) sucks the epitaxial layer of the flip chip through the epitaxial layer vacuum suction nozzle to further suck up the flip chip, the translation mechanism drives the epitaxial layer vacuum suction nozzle to move to drive the flip chip to move so that the electrode of the flip chip corresponds to the position of a circuit on the receiving support, the substrate picking-up assembly sucks the substrate of the flip chip through the substrate vacuum suction nozzle, the epitaxial layer vacuum suction nozzle stops sucking the epitaxial layer of the flip chip after sucking the substrate of the flip chip by the substrate vacuum suction nozzle, and the rotation mechanism drives the substrate vacuum suction nozzle to rotate 180 degrees in a plane perpendicular to the film after the substrate vacuum suction nozzle sucks the flip chip, drives the flip chip to rotate 180 degrees in the plane perpendicular to the film, so that the electrode of the flip chip faces downwards and the substrate faces upwards;
and (6) stopping sucking the substrate of the flip chip by the substrate vacuum suction nozzle, placing the flip chip on a corresponding position on the receiving bracket, and enabling the electrode of the flip chip to be electrically communicated with the circuit on the receiving bracket.
12. The flip chip die attach method of claim 11, wherein: the epitaxial layer pickup assembly further comprises an epitaxial layer die bonding arm, and the epitaxial layer die bonding arm is vertically and fixedly connected with the epitaxial layer vacuum suction nozzle; the substrate picking assembly also comprises a substrate die bonding arm, and the substrate die bonding arm is vertically and fixedly connected with the substrate vacuum suction nozzle;
the step (4) is that the epitaxial layer picking-up assembly attracts the epitaxial layer of the flip chip through the epitaxial layer vacuum suction nozzle to further attract the flip chip, the step (5) is that the rotating mechanism drives the epitaxial layer fixing arm to rotate 180 degrees in a plane vertical to the thin film to drive the epitaxial layer vacuum suction nozzle to rotate 180 degrees in the plane vertical to the thin film to further drive the flip chip to rotate 180 degrees in the plane vertical to the thin film to enable the electrode of the flip chip to face downwards and the substrate to face upwards, the substrate picking-up assembly attracts the substrate of the flip chip through the substrate vacuum suction nozzle, the epitaxial layer vacuum suction nozzle stops attracting the epitaxial layer of the flip chip after the substrate vacuum suction nozzle attracts the substrate of the flip chip, the translation mechanism drives the substrate fixing arm to move to drive the substrate vacuum suction nozzle to move to further drive the flip chip to move, and enable the electrode of the flip chip to correspond to the line,
or, the step (4) is that the epitaxial layer picking assembly attracts the epitaxial layer of the flip chip through the epitaxial layer vacuum suction nozzle to further attract the flip chip, the substrate picking assembly attracts the substrate of the flip chip through the substrate vacuum suction nozzle, the epitaxial layer vacuum suction nozzle stops attracting the epitaxial layer of the flip chip after the substrate vacuum suction nozzle attracts the substrate of the flip chip, the step (5) is that the rotating mechanism drives the substrate die bonding arm to rotate 180 degrees in a plane perpendicular to the thin film after the substrate vacuum suction nozzle attracts the flip chip, drives the substrate vacuum suction nozzle to rotate 180 degrees in the plane perpendicular to the thin film, further drives the flip chip to rotate 180 degrees in the plane perpendicular to the thin film, enables the electrode of the flip chip to face downwards and the substrate to face upwards, drives the substrate die bonding arm to move, drives the substrate vacuum suction nozzle to move, further drives the flip chip to move, and enables the electrode of the flip chip to correspond to the line position on the receiving support,
or, the step (4) is that the epitaxial layer picking assembly attracts the epitaxial layer of the flip chip through the epitaxial layer vacuum suction nozzle to further suck the flip chip, the step (5) is that the rotating mechanism drives the epitaxial layer die-bonding arm to rotate 180 degrees in a plane perpendicular to the thin film to drive the epitaxial layer vacuum suction nozzle to rotate 180 degrees in a plane perpendicular to the thin film to further drive the flip chip to rotate 180 degrees in a plane perpendicular to the thin film to enable the electrode of the flip chip to face downwards and the substrate to face upwards, the translation mechanism drives the epitaxial layer die-bonding arm to move to drive the epitaxial layer vacuum suction nozzle to move to further drive the flip chip to move, so that the electrode of the flip chip corresponds to the line position on the receiving bracket, the substrate picking assembly attracts the substrate of the flip chip through the substrate vacuum suction nozzle, and the epitaxial layer vacuum suction nozzle stops attracting the epitaxial layer of the flip chip after the substrate vacuum suction nozzle attracts,
or, the step (4) is that the epitaxial layer picking assembly attracts the epitaxial layer of the flip chip through the epitaxial layer vacuum suction nozzle to further attract the flip chip, the step (5) is that the translation mechanism drives the epitaxial layer die bonding arm to move to drive the epitaxial layer vacuum suction nozzle to move so as to drive the flip chip to move, so that the electrode of the flip chip corresponds to the circuit position on the receiving bracket, the substrate picking assembly attracts the substrate of the flip chip through the substrate vacuum suction nozzle, the epitaxial layer vacuum suction nozzle stops attracting the epitaxial layer of the flip chip after attracting the substrate of the flip chip by the substrate vacuum suction nozzle, the rotation mechanism drives the substrate die bonding arm to rotate 180 degrees in the plane perpendicular to the thin film after the substrate vacuum suction nozzle attracts the flip chip, the substrate vacuum suction nozzle rotates 180 degrees in the plane perpendicular to the thin film, so as to drive the flip chip to rotate 180 degrees in the plane perpendicular to the thin film, the electrodes of the flip chip are oriented downward and the substrate is oriented upward.
13. The flip chip die attach method of claim 10, wherein: the pick-up mechanism comprises an electrode pick-up assembly and a substrate pick-up assembly; the electrode pick-up assembly comprises an electrode vacuum nozzle; the substrate pick-up assembly comprises a substrate vacuum nozzle;
the step (4) is that the electrode picking assembly attracts the electrode of the flip chip through an electrode vacuum suction nozzle to further attract the flip chip, the step (5) is that the rotating mechanism drives the electrode vacuum suction nozzle to rotate 180 degrees in a plane vertical to the film to drive the flip chip to rotate 180 degrees in the plane vertical to the film to enable the electrode of the flip chip to face downwards and the substrate to face upwards, the substrate picking assembly attracts the substrate of the flip chip through a substrate vacuum suction nozzle, the electrode vacuum suction nozzle stops attracting the electrode of the flip chip after the substrate vacuum suction nozzle attracts the substrate of the flip chip, the translation mechanism drives the substrate vacuum suction nozzle to move to drive the flip chip to move, and the electrode of the flip chip corresponds to the line position on the receiving support,
or, the step (4) is that the electrode picking component attracts an electrode layer of the flip chip through an electrode vacuum suction nozzle to further attract the flip chip, the substrate picking component attracts a substrate of the flip chip through a substrate vacuum suction nozzle, the electrode vacuum suction nozzle stops attracting the electrode of the flip chip after the substrate vacuum suction nozzle attracts the substrate of the flip chip, the step (5) is that the rotating mechanism drives the substrate vacuum suction nozzle to rotate 180 degrees in a plane perpendicular to the film after the substrate vacuum suction nozzle attracts the flip chip, drives the flip chip to rotate 180 degrees in the plane perpendicular to the film, enables the electrode of the flip chip to face downwards and the substrate to face upwards, the translating mechanism drives the substrate vacuum suction nozzle to move, drives the flip chip to move, and enables the electrode of the flip chip to correspond to the line position on the receiving support,
or, the step (4) is that the electrode picking assembly attracts the electrode of the flip chip through an electrode vacuum suction nozzle to further attract the flip chip, the step (5) is that the rotating mechanism drives the electrode vacuum suction nozzle to rotate 180 degrees in a plane perpendicular to the film, drives the flip chip to rotate 180 degrees in the plane perpendicular to the film, enables the electrode of the flip chip to face downwards and the substrate to face upwards, the translation mechanism drives the electrode vacuum suction nozzle to move to drive the flip chip to move, enables the electrode of the flip chip to correspond to the circuit position on the receiving support, the substrate picking assembly attracts the substrate of the flip chip through the substrate vacuum suction nozzle, and the electrode vacuum suction nozzle stops attracting the electrode of the flip chip after the substrate vacuum suction nozzle attracts the substrate of the flip chip,
or, the step (4) is that the electrode picking assembly attracts the electrode of the flip chip through an electrode vacuum suction nozzle to further attract the flip chip, the step (5) is that the translation mechanism drives the electrode vacuum suction nozzle to move to drive the flip chip to move so that the electrode of the flip chip corresponds to the circuit position on the receiving support, the substrate picking assembly attracts the substrate of the flip chip through a substrate vacuum suction nozzle, the electrode vacuum suction nozzle stops attracting the epitaxial layer of the flip chip after the substrate vacuum suction nozzle attracts the substrate of the flip chip, and the rotating mechanism drives the substrate vacuum suction nozzle to rotate 180 degrees in the plane perpendicular to the thin film after the substrate vacuum suction nozzle attracts the flip chip, drives the flip chip to rotate 180 degrees in the plane perpendicular to the thin film, so that the electrode of the flip chip faces downwards and the substrate faces upwards;
and (6) stopping sucking the substrate of the flip chip by the substrate vacuum suction nozzle, placing the flip chip on a corresponding position on the receiving bracket, and enabling the electrode of the flip chip to be electrically communicated with the circuit on the receiving bracket.
14. The flip chip die attach method of claim 13, wherein: the electrode picking assembly also comprises an electrode die bonding arm, and the electrode die bonding arm is vertically and fixedly connected with the electrode vacuum suction nozzle; the substrate pick-up assembly; the electrode picking assembly comprises a substrate die bonding arm, and the substrate die bonding arm is vertically and fixedly connected with the substrate vacuum suction nozzle;
the step (4) is that the electrode picking assembly attracts the electrode of the flip chip through an electrode vacuum suction nozzle to further attract the flip chip, the step (5) is that the rotating mechanism drives the electrode die bonding arm to rotate 180 degrees in a plane vertical to the film, drives the electrode vacuum suction nozzle to rotate 180 degrees in the plane vertical to the film, further drives the flip chip to rotate 180 degrees in the plane vertical to the film, so that the electrode of the flip chip faces downwards and the substrate faces upwards, the substrate picking assembly attracts the substrate of the flip chip through a substrate vacuum suction nozzle, the electrode vacuum suction nozzle stops attracting the electrode of the flip chip after the substrate vacuum suction nozzle attracts the substrate of the flip chip, the translation mechanism drives the substrate die bonding arm to move, drives the substrate vacuum suction nozzle to move, further drives the flip chip to move, so that the electrode of the flip chip corresponds to the line position on the receiving support,
or, the step (4) is that the electrode picking component attracts an electrode layer of the flip chip through an electrode vacuum suction nozzle to further attract the flip chip, the substrate picking component attracts a substrate of the flip chip through a substrate vacuum suction nozzle, the electrode vacuum suction nozzle stops attracting the electrode of the flip chip after the substrate vacuum suction nozzle attracts the substrate of the flip chip, the step (5) is that the rotating mechanism drives the substrate die bonding arm to rotate 180 degrees in a plane perpendicular to the thin film after the substrate vacuum suction nozzle attracts the flip chip, the vacuum suction nozzle is driven to rotate 180 degrees in the plane perpendicular to the thin film, the flip chip is driven to rotate 180 degrees in the plane perpendicular to the thin film, the electrode of the flip chip faces downwards, the substrate faces upwards, the translation mechanism drives the substrate die bonding arm to move, the substrate vacuum suction nozzle is driven to move, the flip chip is driven to move, and the electrode of the flip chip corresponds to a line position on the receiving support,
or, the step (4) is that the electrode picking assembly attracts the electrodes of the flip chip through an electrode vacuum suction nozzle, and then sucking up the flip chip, wherein the step (5) is that the rotating mechanism drives the electrode die bonding arm to rotate 180 degrees in a plane vertical to the film to drive the electrode vacuum suction nozzle to rotate 180 degrees in the plane vertical to the film, thereby driving the flip chip to rotate 180 degrees in a plane vertical to the film, enabling the electrode of the flip chip to face downwards and the substrate to face upwards, driving the electrode die bonding arm to move by the translation mechanism, driving the electrode vacuum suction nozzle to move, further driving the flip chip to move so that the electrodes of the flip chip correspond to the positions of the lines on the receiving support, the substrate pickup assembly sucking the substrate of the flip chip through the substrate vacuum suction nozzle, the electrode vacuum suction nozzle stopping sucking the electrodes of the flip chip after the substrate vacuum suction nozzle sucks the substrate of the flip chip,
or, the step (4) is that the electrode picking assembly attracts an electrode of the flip chip through an electrode vacuum suction nozzle to further attract the flip chip, the step (5) is that the translation mechanism drives the electrode die bonding arm to move to drive the electrode vacuum suction nozzle to move so as to drive the flip chip to move, so that the electrode of the flip chip corresponds to the circuit position on the receiving support, the substrate picking assembly attracts a substrate of the flip chip through a substrate vacuum suction nozzle, the electrode vacuum suction nozzle stops attracting an epitaxial layer of the flip chip after attracting the substrate of the flip chip by the substrate vacuum suction nozzle, the rotation mechanism drives the substrate die bonding arm to rotate 180 degrees in a plane perpendicular to the thin film after the substrate vacuum suction nozzle attracts the flip chip, the substrate vacuum suction nozzle rotates 180 degrees in the plane perpendicular to the thin film, so as to drive the flip chip to rotate 180 degrees in the plane perpendicular to the thin film, the electrode of the flip chip faces downwards, and the substrate faces upwards;
and (6) stopping sucking the substrate of the flip chip by the substrate vacuum suction nozzle, placing the flip chip on a corresponding position on the receiving bracket, and enabling the electrode of the flip chip to be electrically communicated with the circuit on the receiving bracket.
15. The flip chip die attach method of claim 10, wherein: the picking mechanism comprises a side picking assembly; the side pick assembly comprises a side pick head for clamping a side of the flip chip;
the side face picking assembly clamps the side face of the flip chip through a side face picking head so as to pick the flip chip; the step (5) is that the rotating mechanism drives the side pick-up head to rotate 180 degrees in a plane vertical to the film, drives the flip chip to rotate 180 degrees in the plane vertical to the film, and leads the electrode of the flip chip to face downwards and the substrate to face upwards; the translation mechanism drives the side pick-up head to move and drives the flip chip to move, so that the electrode of the flip chip corresponds to the position of the circuit on the receiving bracket; and (6) stopping clamping the side face of the flip chip by the side face pick-up head, placing the flip chip on a corresponding position on the receiving support, and enabling the electrode of the flip chip to be electrically communicated with the circuit on the receiving support.
16. The flip chip die attach method of claim 15, wherein: the side picking assembly further comprises a side die bonding arm, and the side die bonding arm is vertically and fixedly connected with the side picking head;
the step (5) is that the rotating mechanism drives the side pick-up head to rotate 180 degrees in a plane vertical to the film, drives the flip chip to rotate 180 degrees in the plane vertical to the film, and leads the electrode of the flip chip to face downwards and the substrate to face upwards; the translation mechanism drives the side die bonding arm to move, drives the side pick-up head to move, and further drives the flip chip to move, so that the electrode of the flip chip corresponds to the circuit position on the receiving support.
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