CN109037383A - A kind of HJT solar battery and preparation method thereof and photovoltaic module - Google Patents
A kind of HJT solar battery and preparation method thereof and photovoltaic module Download PDFInfo
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- CN109037383A CN109037383A CN201810820193.3A CN201810820193A CN109037383A CN 109037383 A CN109037383 A CN 109037383A CN 201810820193 A CN201810820193 A CN 201810820193A CN 109037383 A CN109037383 A CN 109037383A
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- 238000002360 preparation method Methods 0.000 title abstract description 8
- 239000010409 thin film Substances 0.000 claims abstract description 214
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims abstract description 76
- 238000000151 deposition Methods 0.000 claims abstract description 69
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 65
- 239000001301 oxygen Substances 0.000 claims abstract description 65
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 65
- 229910052786 argon Inorganic materials 0.000 claims abstract description 38
- 230000008021 deposition Effects 0.000 claims abstract description 35
- 239000007789 gas Substances 0.000 claims abstract description 32
- 229910021419 crystalline silicon Inorganic materials 0.000 claims description 46
- 239000010408 film Substances 0.000 claims description 26
- VVTSZOCINPYFDP-UHFFFAOYSA-N [O].[Ar] Chemical compound [O].[Ar] VVTSZOCINPYFDP-UHFFFAOYSA-N 0.000 claims description 22
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 16
- 238000004519 manufacturing process Methods 0.000 claims description 14
- 238000004062 sedimentation Methods 0.000 claims description 6
- 238000000034 method Methods 0.000 claims description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
- 239000013078 crystal Substances 0.000 claims description 3
- 238000012545 processing Methods 0.000 claims description 3
- 230000003287 optical effect Effects 0.000 abstract description 10
- 238000010586 diagram Methods 0.000 description 5
- 239000000463 material Substances 0.000 description 4
- 238000011160 research Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 210000001161 mammalian embryo Anatomy 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000010606 normalization Methods 0.000 description 1
- 230000008092 positive effect Effects 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 230000002459 sustained effect Effects 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
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- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
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- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
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Abstract
The invention discloses a kind of HJT solar battery and preparation method thereof and photovoltaic modulies, during depositing first TCO thin film to n-th TCO thin film, the flow for the argon gas being passed through remains unchanged, and the flow for the oxygen being passed through is in reduction trend, the principle for reducing TCO thin film carrier concentration due to the reduction of oxygen, so that the carrier concentration of the i-th TCO thin film is less than the carrier concentration of i+1 TCO thin film, avoid the excessive situation of the carrier concentration of back side TCO thin film layer entirety, and carrier concentration can be made high and the n-th TCO thin film of well conducting is contacted with rear electrode, it ensure that the back side TCO thin film layer of deposition while with high work function, with good electric conductivity and optical property, improve the performance of HJT solar battery.
Description
Technical field
The present invention relates to solar energy generation technology fields, more specifically, are related to a kind of HJT solar battery and its system
Make method and photovoltaic module.
Background technique
The people in 1,000,000,000 or more the whole world stays in be increasingly urgent to without electricity or power-shortage area, the electrical demand of people.And with complete
Natural calamity caused by the surging and earth heating of world environments protective awareness is got worse, and people are to traditional energy
Focus is gradually reduced, then carries out research use, solar battery to energy such as pollution-free, reproducible solar energy, wind energies
It market will be just in sustained and rapid development.
Heterojunction amorphous silicon/crystal silicon solar batteries HJT (Hetero-junction with Intrinsic
Thinlayer, abbreviation HJT) be current mainstream high performance solar batteries.Hetero-junctions refers to that two different semiconductors are in contact
It is formed by interface zone, hetero-junctions usually has excellent photoelectric characteristic, it is made to be suitable for making ultrahigh speed switching device, too
Positive energy battery and semiconductor laser etc..Since it is with irreplaceable advantage, at present to heterojunction solar battery
The research of (HJT photovoltaic cell) is carried out like a raging fire.
There is TCO (transparent conductive oxide, transparent conductive oxide) in HJT solar battery
Film layer, TCO thin film layer need to guarantee excellent optical property and electric conductivity, and from of different amorphous silicon layer work functions
Match.TCO thin film layer will lead to the variation of battery fill factor from the matching of the work function of different amorphous silicon layers, theoretically speaking,
The work function of the TCO thin film layer contacted with the P-type non-crystalline silicon layer in HJT solar battery wants high, can improve the conversion of battery
Efficiency.But it is directed to a kind of TCO material, in general, the fermi level of high work function TCO thin film layer is low, and carrier concentration is low,
The electric conductivity that will lead to TCO thin film layer in this way is deteriorated, so there is contradictions between work function and electric conductivity, it cannot be single
The work function or electric conductivity for improving TCO thin film layer need to balance the two and reach optimum efficiency.
Summary of the invention
In view of this, the present invention provides a kind of HJT solar battery and preparation method thereof and photovoltaic module, in deposition institute
During stating the first TCO thin film to n-th TCO thin film, the flow for the oxygen being passed through is in reduction trend, so that the i-th TCO thin film
Carrier concentration be less than i+1 TCO thin film carrier concentration, ensure that the back side TCO thin film layer of deposition with Gao Gong
While function, there is good electric conductivity, improve the performance of HJT solar battery.
To achieve the above object, technical solution provided by the invention is as follows:
A kind of production method of HJT solar battery is wrapped when making the back side TCO thin film layer of P-type non-crystalline silicon layer side
It includes:
The first TCO thin film of superposition is sequentially depositing to the n-th TCO thin film, to obtain on the surface of the P-type non-crystalline silicon layer
It states the first TCO thin film to the n-th TCO thin film and is superimposed the back side TCO thin film layer to be formed, n is the integer not less than 2；
Wherein, during depositing first TCO thin film to n-th TCO thin film, the flow for the argon gas being passed through is kept
It is constant, and the flow for the oxygen being passed through is in reduction trend.
Optionally, the back side TCO thin film layer be back side ito thin film layer, back side AZO film layer, back side ATO film layer,
Any one in the FTO film layer of the back side.
Optionally, the back side TCO thin film layer is back side ito thin film layer, wherein n 7, the back side ito thin film layer packet
The first ito thin film to the 7th ito thin film for being sequentially depositing superposition is included, depositing the back side ito thin film layer includes:
When depositing first ito thin film, the oxygen argon volume ratio of the oxygen and the argon gas is 1.7%-2.3%,
Including endpoint value；
Reduce the flow for being passed through the oxygen, when deposition finishes the second ito thin film, the oxygen of the oxygen and the argon gas
Argon volume ratio is 1.5%-2.1%, including endpoint value；
Reduce the flow for being passed through the oxygen, when deposition finishes third ito thin film, the oxygen of the oxygen and the argon gas
Argon volume ratio is 1.3%-1.9%, including endpoint value；
Reduce the flow for being passed through the oxygen, when deposition finishes four ito thin films, the oxygen of the oxygen and the argon gas
Argon volume ratio is 1.1%-1.7%, including endpoint value；
Reduce the flow for being passed through the oxygen, when deposition finishes five ito thin films, the oxygen of the oxygen and the argon gas
Argon volume ratio is 0.9%-1.5%, including endpoint value；
Reduce the flow for being passed through the oxygen, when deposition finishes six ito thin films, the oxygen of the oxygen and the argon gas
Argon volume ratio is 0.7%-1.3%, including endpoint value；
Reduce the flow for being passed through the oxygen, when deposition finishes seven ito thin film, the oxygen and the argon gas
Oxygen argon volume ratio be 0.5%-1.1%, including endpoint value.
Optionally, when depositing first TCO thin film to n-th TCO thin film, the oxygen of the oxygen and the argon gas
Argon volume ratio is intended to linearly reduce.
Optionally, first ito thin film is deposited into the 7th ito thin film when any one ito thin film, sedimentation time
It is 1min.
Optionally, when depositing the back side ito thin film layer, background vacuum is not less than 5*10-4Pa；
Processing procedure power is 2KW-10KW, including endpoint value；
Deposition rate is 5nm/s-15nm/s, including endpoint value；
Pressure is 0.3Pa-0.5Pa, including endpoint value.
Correspondingly, the present invention also provides a kind of HJT solar batteries, comprising:
Crystalline silicon；
It is located at the positive intrinsic amorphous silicon layer and back side intrinsic amorphous silicon layer of the crystalline silicon both side surface；
Deviate from the N-type non-crystalline silicon layer of the crystalline silicon side positioned at the positive intrinsic amorphous silicon layer, and is located at the back
Face amorphous silicon layer deviates from the P-type non-crystalline silicon layer of the crystalline silicon side；
Deviate from the positive TCO thin film layer of the crystalline silicon side positioned at the N-type non-crystalline silicon layer, and non-positioned at the p-type
Crystal silicon layer deviates from the back side TCO thin film layer of the crystalline silicon side, wherein the back side TCO thin film layer is folded including being sequentially depositing
The first TCO thin film added is to the n-th TCO thin film, and the carrier concentration of the i-th TCO thin film is less than the carrier of i+1 TCO thin film
Concentration, n are the integer not less than 2, and i is the positive integer less than n；
And deviate from the front electrode of the crystalline silicon side positioned at the positive TCO thin film layer, and be located at the back side
TCO thin film layer deviates from the rear electrode of the crystalline silicon side.
Optionally, the back side TCO thin film layer be back side ito thin film layer, back side AZO film layer, back side ATO film layer,
Any one in the FTO film layer of the back side.
Optionally, the back side TCO thin film layer is back side ito thin film layer, wherein n 7, the back side ito thin film layer packet
Include the first ito thin film to the 7th ito thin film for being sequentially depositing superposition.
Correspondingly, the photovoltaic module includes above-mentioned HJT solar-electricity the present invention also provides a kind of photovoltaic module
Pond.
Compared to the prior art, technical solution provided by the invention has at least the following advantages:
The present invention provides a kind of HJT solar battery and preparation method thereof and photovoltaic modulies, are depositing the first TCO
During film to n-th TCO thin film, the flow for the argon gas being passed through is remained unchanged, and the flow for the oxygen being passed through is in reduction
Trend, due to the principle that the reduction of oxygen reduces TCO thin film carrier concentration, so that the carrier of the i-th TCO thin film is dense
Degree is less than the carrier concentration of i+1 TCO thin film, avoids the excessive situation of the carrier concentration of back side TCO thin film layer entirety,
And carrier concentration can be made high and the n-th TCO thin film of well conducting is contacted with rear electrode, ensure that the back side of deposition
TCO thin film layer has good electric conductivity and optical property, improves HJT solar battery while with high work function
Performance.
Detailed description of the invention
In order to more clearly explain the embodiment of the invention or the technical proposal in the existing technology, to embodiment or will show below
There is attached drawing needed in technical description to be briefly described, it should be apparent that, the accompanying drawings in the following description is only this
The embodiment of invention for those of ordinary skill in the art without creative efforts, can also basis
The attached drawing of offer obtains other attached drawings.
Fig. 1 is that a kind of structural schematic diagram of HJT solar battery provided by the embodiments of the present application is；
A kind of Fig. 2 flow chart of the deposition method of back side ito thin film layer provided by the embodiments of the present application；
Fig. 3 is sedimentation time provided by the embodiments of the present application and oxygen argon volume ratio relation schematic diagram；
Fig. 4 is a kind of optical performance curve figure of HJT solar battery provided by the embodiments of the present application；
Fig. 5 is a kind of external quantum efficiency curve graph of HJT solar battery provided by the embodiments of the present application.
Specific embodiment
Following will be combined with the drawings in the embodiments of the present invention, and technical solution in the embodiment of the present invention carries out clear, complete
Site preparation description, it is clear that described embodiments are only a part of the embodiments of the present invention, instead of all the embodiments.It is based on
Embodiment in the present invention, it is obtained by those of ordinary skill in the art without making creative efforts every other
Embodiment shall fall within the protection scope of the present invention.
As described in background, there is TCO thin film layer in HJT solar battery, TCO thin film layer needs to guarantee excellent
Optical property and electric conductivity, and from the matching of different amorphous silicon layer work functions.The function of TCO thin film layer and different amorphous silicon layers
The matching of function will lead to the variation of battery fill factor, theoretically speaking, with the P-type non-crystalline silicon layer in HJT solar battery
The work function of the TCO thin film layer of contact wants high, can improve the transfer efficiency of battery.But it is directed to a kind of TCO material, it is general next
It says, the fermi level of high work function TCO thin film layer is low, and carrier concentration is low, and the electric conductivity that will lead to TCO thin film layer in this way becomes
Difference, so there is contradiction between work function and electric conductivity, the work function or conduction of raising TCO thin film layer that cannot be single
Property, it needs to balance the two and reaches optimum efficiency.
Based on this, the embodiment of the present application provides a kind of HJT solar battery and preparation method thereof and photovoltaic module, heavy
During product first TCO thin film to n-th TCO thin film, the flow for the oxygen being passed through is in reduction trend, so that the i-th TCO
The carrier concentration of film is less than the carrier concentration of i+1 TCO thin film, ensure that the back side TCO thin film layer of deposition has
While high work function, there is good electric conductivity, improve the performance of HJT solar battery.To achieve the above object, this Shen
Please the technical solution that provides of embodiment it is as follows, specifically combine Fig. 1 to Fig. 5 to carry out technical solution provided by the embodiments of the present application detailed
Thin description.
The embodiment of the present application provides a kind of production method of HJT solar battery, in production P-type non-crystalline silicon layer side
Include: when the TCO thin film layer of the back side
The first TCO thin film of superposition is sequentially depositing to the n-th TCO thin film, to obtain on the surface of the P-type non-crystalline silicon layer
It states the first TCO thin film to the n-th TCO thin film and is superimposed the back side TCO thin film layer to be formed, n is the integer not less than 2；
Wherein, during depositing first TCO thin film to n-th TCO thin film, the flow for the argon gas being passed through is kept
It is constant, and the flow for the oxygen being passed through is in reduction trend.
In one embodiment of the application, the embodiment of the present application is depositing first TCO thin film to n-th TCO thin film
When, the oxygen argon volume ratio of the oxygen and the argon gas is intended to linearly reduce.
It should be noted that HJT solar battery provided by the embodiments of the present application include crystalline silicon, it is intrinsic noncrystal
Silicon, N-type non-crystalline silicon, p-type non-crystalline silicon, positive TCO thin film layer and electrode structure, the group for including to this HJT solar battery
It is same as the prior art at the production method of structure, therefore the application does not make extra repeat.And it is provided by the embodiments of the present application
The material of first TCO thin film to the n-th TCO thin film is preferably same material；And the first TCO thin film provided by the embodiments of the present application is extremely
Each film thickness is preferably consistent in n-th TCO thin film, is not particularly limited to this application.
It is a kind of structural schematic diagram of HJT solar battery provided by the embodiments of the present application with specific reference to shown in Fig. 1,
In, HJT solar battery provided by the embodiments of the present application includes:
Crystalline silicon 100；
It is located at the positive intrinsic amorphous silicon layer 210 and back side intrinsic amorphous silicon layer of 100 both side surface of crystalline silicon
220；
N-type non-crystalline silicon layer 310 and position positioned at the positive intrinsic amorphous silicon layer 210 away from 100 side of crystalline silicon
Deviate from the P-type non-crystalline silicon layer 320 of 100 side of crystalline silicon in the rear amorphous silicon layer 220；
Deviate from the positive TCO thin film layer 410 of 100 side of crystalline silicon positioned at the N-type non-crystalline silicon layer 310, and is located at
The P-type non-crystalline silicon layer 320 deviates from the back side TCO thin film layer 420 of 100 side of crystalline silicon, wherein the back side TCO is thin
Film layer 420 includes 421 to the n-th TCO thin film 42n of the first TCO thin film for being sequentially depositing superposition, and the carrier of the i-th TCO thin film is dense
Degree is less than the carrier concentration of i+1 TCO thin film, and n is the integer not less than 2, and i is the positive integer less than n；
And deviate from front electrode 510 and the position of 100 side of crystalline silicon positioned at the positive TCO thin film layer 410
Deviate from the rear electrode 520 of 100 side of crystalline silicon in the back side TCO thin film layer 420.
In one embodiment of the application, front electrode provided by the present application is front gate line；And the embodiment of the present application mentions
The rear electrode of confession can be not particularly limited this application with back side grid line or back electrode.
In one embodiment of the application, the back side TCO thin film layer provided by the present application can for back side ito thin film layer,
Back side AZO film layer, back side ATO film layer, any one in the FTO film layer of the back side.Optionally, provided by the embodiments of the present application
When the back side TCO thin film layer is back side ito thin film layer, wherein n 7, the back side ito thin film layer are folded including being sequentially depositing
The first ito thin film added is to the 7th ito thin film.
As shown in the above, technical solution provided by the embodiments of the present application is depositing first TCO thin film to described
During n-th TCO thin film, the flow for the argon gas being passed through is remained unchanged, and the flow for the oxygen being passed through is in reduction trend, due to oxygen
The principle that the reduction of gas reduces TCO thin film carrier concentration so that the carrier concentration of the i-th TCO thin film less than i-th+
The carrier concentration of 1TCO film avoids the excessive situation of the carrier concentration of back side TCO thin film layer entirety, and can make
N-th TCO thin film of carrier concentration height and well conducting is contacted with rear electrode, ensure that the back side TCO thin film layer of deposition exists
While with high work function, there is good electric conductivity and optical property, improve the performance of HJT solar battery.
With reference to the accompanying drawing to the deposition that TCO thin film layer in the back side provided by the embodiments of the present application is back side ito thin film layer
Journey is described in detail.Refering to what is shown in Fig. 2, being a kind of deposition method of back side ito thin film layer provided by the embodiments of the present application
Flow chart, wherein the back side TCO thin film layer provided by the embodiments of the present application be back side ito thin film layer, wherein n 7, institute
Stating back side ito thin film layer includes the first ito thin film to the 7th ito thin film for being sequentially depositing superposition, deposits the back side ito thin film
Layer include:
S1, when depositing first ito thin film, the oxygen argon volume ratio of the oxygen and the argon gas is 1.7%-
2.3%, including endpoint value；
S2, reduction are passed through the flow of the oxygen, when deposition finishes the second ito thin film, the oxygen and the argon gas
Oxygen argon volume ratio be 1.5%-2.1%, including endpoint value；
S3, reduction are passed through the flow of the oxygen, when deposition finishes third ito thin film, the oxygen and the argon gas
Oxygen argon volume ratio be 1.3%-1.9%, including endpoint value；
S4, reduction are passed through the flow of the oxygen, when deposition finishes four ito thin films, the oxygen and the argon gas
Oxygen argon volume ratio be 1.1%-1.7%, including endpoint value；
S5, reduction are passed through the flow of the oxygen, when deposition finishes five ito thin films, the oxygen and the argon gas
Oxygen argon volume ratio be 0.9%-1.5%, including endpoint value；
S6, reduction are passed through the flow of the oxygen, when deposition finishes six ito thin films, the oxygen and the argon gas
Oxygen argon volume ratio be 0.7%-1.3%, including endpoint value；
S7, reduction are passed through the flow of the oxygen, when deposition finishes seven ito thin film, the oxygen with it is described
The oxygen argon volume ratio of argon gas is 0.5%-1.1%, including endpoint value.
In one embodiment of the application, deposition first ito thin film provided by the present application is into the 7th ito thin film
When any one ito thin film, sedimentation time is 1min.Also that is, the embodiment of the present application is depositing the first ito thin film to the described 7th
It is 2% with oxygen argon volume ratio is the deposition that condition carries out the first ito thin film when embryo deposit is to 1min, at this time when ito thin film
Since oxygen content is high, so it is small compared to the carrier concentration of the first ito thin film of subsequent deposition；Then, often reach 1min's
After sedimentation time, the deposition of ito thin film is carried out after the flow of oxygen is gradually reduced again, and due to the period mistake in 1min
Oxygen content is not moment reduction but slowly reduces in journey, so, when having deposited ito thin film every time, oxygen argon volume ratio
Reach aforementioned proportion.
It as shown in connection with fig. 3, is the relation schematic diagram of sedimentation time provided by the embodiments of the present application and oxygen argon volume ratio,
In, during depositing the first ito thin film to seven ito thin films, oxygen argon volume ratio linearly reduces.
In one embodiment of the application, technological parameter of the application when depositing back side ito thin film layer is not particularly limited,
Wherein, when depositing the back side ito thin film layer, background vacuum is not less than 5*10-4Pa；
Processing procedure power is 2KW-10KW, including endpoint value；
Deposition rate is 5nm/s-15nm/s, including endpoint value；
Pressure is 0.3Pa-0.5Pa.Including endpoint value.
The embodiment of the present application offer is deposited using deposition method provided by the above embodiment in conjunction with attached drawing or table
When the TCO thin film layer of the back side, the excellent properties of back side TCO thin film layer and HJT solar battery are illustrated.
The excellent in optical properties of TCO thin film layer in the back side provided by the embodiments of the present application, refering to what is shown in Fig. 4, real for the application
A kind of optical performance curve figure of HJT solar battery of example offer is applied, abscissa is optical band Wavelength (nm), indulges and sits
It is designated as effective transmissivity Tte (%), wherein effective transmissivity Tte is an important indicator for evaluating TCO thin film layer performance, Tte
=T/ (1-R), T are the transmitances of TCO thin film layer, and R is the reflectivity of TCO thin film layer.As shown in connection with fig. 3, the embodiment of the present application
The effective transmissivity Tte1 of the back side TCO thin film layer of offer, the effective transmissivity Tte2 with the back side TCO thin film layer of existing production
It compares, has and significantly promoted, especially at 900nm-1200nm long-wave band, the promotion of effective transmissivity Tte average value is about
1.2%.
The electric property of TCO thin film layer in the back side provided by the embodiments of the present application is excellent, the back side provided by the embodiments of the present application
Such as table after the carrier concentration of TCO thin film layer and the back side TCO thin film layer of existing production, carrier mobility and sheet resistance normalization
Shown in 1, the carrier concentration of TCO thin film layer in the back side provided by the embodiments of the present application reduces about 40% compared with prior art, makes
TCO thin film layer in the back side provided by the embodiments of the present application fermi level it is low and work function is high, the filling to HJT solar battery
Factor FF plays positive-effect.
| Carrier concentration | Carrier mobility | Sheet resistance | |
| The application back side TCO thin film layer | 0.60 | 1.05 | 1.61 |
| Existing back side TCO thin film layer | 1.00 | 1.00 | 1.00 |
Table 1
In conjunction with shown in table 2, HJT solar battery provided by the embodiments of the present application, compared to existing HJT solar battery
For, HJT solar battery provided by the embodiments of the present application is promoted in performance parameter.
| Pmax[W] | Eff [%] | Voc[V] | Isc[A] | FF | |
| The application HJT solar battery | 1.00 | 1.00 | 1.00 | 1.00 | 1.00 |
| Existing HJT solar battery | 1.03 | 1.03 | 1.00 | 1.01 | 1.01 |
Table 2
It is described in reference diagram 5, it is a kind of external quantum efficiency curve graph of HJT solar battery provided by the embodiments of the present application,
Wherein, the external quantum efficiency EQE1 of TCO thin film layer in the back side provided by the embodiments of the present application, the back side TCO thin film with existing production
The external quantum efficiency EQE2 of layer compares, and is obviously improved in wave band 300nm-1180nm, especially mentions more than long-wave band 900nm
The rate of liter is up to 5%.
Correspondingly, the photovoltaic module includes above-mentioned any one reality the embodiment of the present application also provides a kind of photovoltaic module
The HJT solar battery of example offer is provided.
The embodiment of the present application provides a kind of HJT solar battery and preparation method thereof and photovoltaic module, described in deposition
During first TCO thin film to n-th TCO thin film, the flow for the argon gas being passed through is remained unchanged, and the flow for the oxygen being passed through
In trend is reduced, due to the principle that the reduction of oxygen reduces TCO thin film carrier concentration, so that the load of the i-th TCO thin film
The carrier concentration that sub- concentration is less than i+1 TCO thin film is flowed, the carrier concentration for avoiding back side TCO thin film layer entirety is excessive
The case where, and the n-th TCO thin film of carrier concentration height and well conducting can be made to contact with rear electrode, it ensure that deposition
The back side TCO thin film layer while with high work function, have good electric conductivity and optical property, improve the HJT sun
The performance of energy battery.
The foregoing description of the disclosed embodiments enables those skilled in the art to implement or use the present invention.
Various modifications to these embodiments will be readily apparent to those skilled in the art, as defined herein
General Principle can be realized in other embodiments without departing from the spirit or scope of the present invention.Therefore, of the invention
It is not intended to be limited to the embodiments shown herein, and is to fit to and the principles and novel features disclosed herein phase one
The widest scope of cause.
Claims (10)
1. a kind of production method of HJT solar battery, which is characterized in that the back side TCO in production P-type non-crystalline silicon layer side is thin
Include: when film layer
It is sequentially depositing the first TCO thin film to the n-th TCO thin film of superposition on the surface of the P-type non-crystalline silicon layer, to obtain described
One TCO thin film to the n-th TCO thin film is superimposed the back side TCO thin film layer to be formed, and n is the integer not less than 2；
Wherein, during depositing first TCO thin film to n-th TCO thin film, the flow for the argon gas being passed through is kept not
Become, and the flow for the oxygen being passed through is in reduction trend.
2. the production method of HJT solar battery according to claim 1, which is characterized in that the back side TCO thin film layer
For any one in back side ito thin film layer, back side AZO film layer, back side ATO film layer, back side FTO film layer.
3. the production method of HJT solar battery according to claim 2, which is characterized in that the back side TCO thin film layer
For back side ito thin film layer, wherein n 7, the back side ito thin film layer include being sequentially depositing the first ito thin film of superposition to
Seven ito thin films, depositing the back side ito thin film layer includes:
When depositing first ito thin film, the oxygen argon volume ratio of the oxygen and the argon gas is 1.7%-2.3%, including
Endpoint value；
Reduce the flow for being passed through the oxygen, when deposition finishes the second ito thin film, the oxygen argon body of the oxygen and the argon gas
Product is than being 1.5%-2.1%, including endpoint value；
Reduce the flow for being passed through the oxygen, when deposition finishes third ito thin film, the oxygen argon body of the oxygen and the argon gas
Product is than being 1.3%-1.9%, including endpoint value；
Reduce the flow for being passed through the oxygen, when deposition finishes four ito thin films, the oxygen argon body of the oxygen and the argon gas
Product is than being 1.1%-1.7%, including endpoint value；
Reduce the flow for being passed through the oxygen, when deposition finishes five ito thin films, the oxygen argon body of the oxygen and the argon gas
Product is than being 0.9%-1.5%, including endpoint value；
Reduce the flow for being passed through the oxygen, when deposition finishes six ito thin films, the oxygen argon body of the oxygen and the argon gas
Product is than being 0.7%-1.3%, including endpoint value；
Reduce the flow for being passed through the oxygen, when deposition finishes seven ito thin film, the oxygen of the oxygen and the argon gas
Argon volume ratio is 0.5%-1.1%, including endpoint value.
4. the production method of HJT solar battery according to any one of claims 1 to 3, which is characterized in that depositing
When first TCO thin film to n-th TCO thin film, the oxygen argon volume ratio of the oxygen and the argon gas is intended to linearly subtract
It is small.
5. the production method of HJT solar battery according to claim 3, which is characterized in that deposition the first ITO is thin
For film into the 7th ito thin film when any one ito thin film, sedimentation time is 1min.
6. the production method of HJT solar battery according to claim 2, which is characterized in that it is thin to deposit the back side ITO
When film layer, background vacuum is not less than 5*10-4Pa；
Processing procedure power is 2KW-10KW, including endpoint value；
Deposition rate is 5nm/s-15nm/s, including endpoint value；
Pressure is 0.3Pa-0.5Pa, including endpoint value.
7. a kind of HJT solar battery characterized by comprising
Crystalline silicon；
It is located at the positive intrinsic amorphous silicon layer and back side intrinsic amorphous silicon layer of the crystalline silicon both side surface；
Deviate from the N-type non-crystalline silicon layer of the crystalline silicon side positioned at the positive intrinsic amorphous silicon layer, and non-positioned at the back side
Crystal silicon layer deviates from the P-type non-crystalline silicon layer of the crystalline silicon side；
Deviate from the positive TCO thin film layer of the crystalline silicon side positioned at the N-type non-crystalline silicon layer, and is located at the P-type non-crystalline silicon
Layer deviates from the back side TCO thin film layer of the crystalline silicon side, wherein the back side TCO thin film layer includes being sequentially depositing superposition
First TCO thin film to the n-th TCO thin film, and the carrier concentration of the i-th TCO thin film is less than the carrier concentration of i+1 TCO thin film,
N is the integer not less than 2, and i is the positive integer less than n；
And deviate from the front electrode of the crystalline silicon side positioned at the positive TCO thin film layer, and be located at the back side TCO
Film layer deviates from the rear electrode of the crystalline silicon side.
8. HJT solar battery according to claim 7, which is characterized in that the back side TCO thin film layer is back side ITO
Film layer, back side AZO film layer, back side ATO film layer, any one in the FTO film layer of the back side.
9. HJT solar battery according to claim 7, which is characterized in that the back side TCO thin film layer is back side ITO
Film layer, wherein n 7, the back side ito thin film layer include the first ito thin film to the 7th ito thin film for being sequentially depositing superposition.
10. a kind of photovoltaic module, which is characterized in that the photovoltaic module include HJT described in claim 7-9 any one too
Positive energy battery.
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| CN112687753A (en) * | 2020-12-14 | 2021-04-20 | 浙江爱旭太阳能科技有限公司 | TCO (transparent conductive oxide) film of HJT solar cell, preparation method of TCO film and cell containing TCO film |
| WO2023202016A1 (en) * | 2022-04-18 | 2023-10-26 | 通威太阳能（安徽）有限公司 | Conductive layer and preparation method therefor, and solar cell |
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