CN110649129A - Silicon heterojunction solar cell - Google Patents
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- CN110649129A CN110649129A CN201910887237.9A CN201910887237A CN110649129A CN 110649129 A CN110649129 A CN 110649129A CN 201910887237 A CN201910887237 A CN 201910887237A CN 110649129 A CN110649129 A CN 110649129A
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 title claims abstract description 39
- 229910052710 silicon Inorganic materials 0.000 title claims abstract description 39
- 239000010703 silicon Substances 0.000 title claims abstract description 39
- 229910021417 amorphous silicon Inorganic materials 0.000 claims abstract description 60
- 239000010949 copper Substances 0.000 claims abstract description 30
- 239000000758 substrate Substances 0.000 claims abstract description 12
- 229910021419 crystalline silicon Inorganic materials 0.000 claims abstract description 9
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 4
- 229910052802 copper Inorganic materials 0.000 claims abstract description 4
- 239000010408 film Substances 0.000 claims description 52
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 claims description 23
- 239000010409 thin film Substances 0.000 claims description 22
- 229910003437 indium oxide Inorganic materials 0.000 claims description 21
- 238000000034 method Methods 0.000 claims description 13
- 229910052684 Cerium Inorganic materials 0.000 claims description 6
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 6
- 229910052733 gallium Inorganic materials 0.000 claims description 6
- 229910052739 hydrogen Inorganic materials 0.000 claims description 6
- 229910052750 molybdenum Inorganic materials 0.000 claims description 6
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 6
- 230000008569 process Effects 0.000 claims description 6
- 229910052718 tin Inorganic materials 0.000 claims description 6
- 229910052719 titanium Inorganic materials 0.000 claims description 6
- 239000010936 titanium Substances 0.000 claims description 6
- 229910052721 tungsten Inorganic materials 0.000 claims description 6
- 229910052725 zinc Inorganic materials 0.000 claims description 6
- 239000011701 zinc Substances 0.000 claims description 6
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 5
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 5
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 5
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 5
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 claims description 5
- 239000001257 hydrogen Substances 0.000 claims description 5
- NJWNEWQMQCGRDO-UHFFFAOYSA-N indium zinc Chemical compound [Zn].[In] NJWNEWQMQCGRDO-UHFFFAOYSA-N 0.000 claims description 5
- 239000011733 molybdenum Substances 0.000 claims description 5
- 239000011135 tin Substances 0.000 claims description 5
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 5
- 239000010937 tungsten Substances 0.000 claims description 5
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 4
- 230000008020 evaporation Effects 0.000 claims description 3
- 238000001704 evaporation Methods 0.000 claims description 3
- 239000012535 impurity Substances 0.000 claims description 3
- 125000004435 hydrogen atom Chemical class [H]* 0.000 claims 1
- 239000000463 material Substances 0.000 description 9
- 238000000151 deposition Methods 0.000 description 6
- 238000005240 physical vapour deposition Methods 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 230000008021 deposition Effects 0.000 description 4
- 150000002431 hydrogen Chemical class 0.000 description 3
- 238000002360 preparation method Methods 0.000 description 3
- XOLBLPGZBRYERU-UHFFFAOYSA-N SnO2 Inorganic materials O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 239000013077 target material Substances 0.000 description 2
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000005329 float glass Substances 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- ATFCOADKYSRZES-UHFFFAOYSA-N indium;oxotungsten Chemical compound [In].[W]=O ATFCOADKYSRZES-UHFFFAOYSA-N 0.000 description 1
- 238000011031 large-scale manufacturing process Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type
- H01L31/0725—Multiple junction or tandem solar cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/075—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PIN type
- H01L31/076—Multiple junction or tandem solar cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/548—Amorphous silicon PV cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention provides a silicon heterojunction solar cell, which comprises: an n-type crystalline silicon substrate; the first intrinsic amorphous silicon layer and the second intrinsic amorphous silicon layer are respectively arranged on the upper surface and the lower surface of the n-type crystalline silicon substrate; the p-type doped amorphous silicon emitter layer is arranged on the upper surface of the first intrinsic amorphous silicon layer; an n-type doped amorphous silicon back field layer disposed on the lower surface of the second intrinsic amorphous silicon layer; the first TCO layer is arranged on the upper surface of the p-type doped amorphous silicon emitter layer; the second TCO layer is arranged on the lower surface of the n-type doped amorphous silicon back field layer; and the copper grid electrode layers are respectively arranged on the upper surface of the first TCO layer and the lower surface of the second TCO layer. The work function of the first TCO layer is higher than that of the second TCO layer, so that the front TCO film and the back TCO film can be respectively in good contact with the p-type amorphous silicon emitter and the n-type amorphous silicon back field, the work function requirement of carrier transportation is met, the contact resistance is reduced, and the cell efficiency is improved.
Description
Technical Field
The invention relates to the technical field of solar cells, in particular to a silicon heterojunction solar cell.
Background
In recent years, silicon heterojunction solar cells have rapidly developed and attracted great attention in the industry. For silicon heterojunction solar cells, there are various technical routes around the world, and materials and preparation processes for TCO (Transparent conductive oxide) films also coexist in various schemes. Common TCO materials include primarily SnO2System, In2O3Systems and ZnO systems. Fluorine doped SnO2Is commonly used in thin film solar cells and is deposited on large areas of float glass. Aluminum-doped ZnO has been actively studied in recent years because of its economic advantages. The TCO material most commonly used In the silicon heterojunction solar cell is In doped with metal such as tin2O3Relatively mature deposition of doped In2O3The techniques mainly include the preparation of ITO (Indium Tin Oxide) film by PVD (Physical Vapor Deposition) method and the Deposition of IWO (Indium tungsten Oxide) film by RPD (reactive Plasma Deposition) method. The PVD method (mainly magnetron sputtering) is more mature, stable in process, more economical in equipment and larger in capacity, so that the PVD method is adopted by most manufacturers at present, but the PVD method has a larger bombardment on a substrate, so that the performance of a thin film still has a larger promotion space. The RPD method mainly adopts the RPD equipment of Japanese Sumitomo heavy industry and the IWO target material matched with the RPD equipment to prepare the IWO film, the technology has small bombardment damage to a silicon substrate, and the photoelectric property of the IWO is superior to that of the ITO, but the large-scale production of the IWO film is still limited by expensive equipment and target materials.
Fig. 1 is a schematic structural diagram of a silicon heterojunction solar cell in the prior art, in which an n-type monocrystalline silicon wafer is used as a substrate, and an intrinsic amorphous silicon thin film and a p-type doped amorphous silicon thin film are sequentially deposited on the front surface of a silicon wafer subjected to cleaning and texturing to form a p-n heterojunction. And depositing an intrinsic amorphous silicon film and an n-type doped amorphous silicon film on the back of the silicon wafer in sequence to form a back surface field. Depositing Transparent Conductive Oxide (TCO) films on two sides of the doped amorphous silicon film to collect current, and finally forming metal electrodes on the top layers of the TCO films on the two sides to form the silicon heterojunction solar cell with a symmetrical structure.
In the prior art, the TCO on the front and back sides of the silicon heterojunction solar cell generally adopts doped indium oxide prepared by PVD or RPD as a contact conductive layer. The cell front and back carrier transport, however, are different for the work function requirements of the front and back TCO films. For the front side of the cell, the transport of holes requires the TCO film to have a high work function, while the back side of the cell requires the TCO film to have a low work function. If the front surface and the back surface of the cell adopt TCO films with the same work function, the TCO films cannot be well matched with the p-type amorphous silicon film and the n-type amorphous silicon film respectively, and the improvement of the cell efficiency is seriously influenced.
Disclosure of Invention
The present invention is directed to solving at least one of the above problems.
Therefore, the invention aims to provide a silicon heterojunction solar cell, wherein TCO films with different work functions are adopted on the front surface and the back surface of the cell, so that the TCO films can respectively form good contact with a p-type amorphous silicon emitter and an n-type amorphous silicon back surface field, and meanwhile, the work function requirement of carrier transport is met, the contact resistance is favorably reduced, and the cell efficiency is improved.
In order to achieve the above object, an embodiment of the present invention provides a silicon heterojunction solar cell, including: an n-type crystalline silicon substrate (1); a first intrinsic amorphous silicon layer (2) and a second intrinsic amorphous silicon layer (3) which are respectively arranged on the upper surface and the lower surface of the n-type crystalline silicon substrate (1); a p-type doped amorphous silicon emitter layer (4) arranged on the upper surface of the first intrinsic amorphous silicon layer (2); an n-type doped amorphous silicon back field layer (5) arranged on the lower surface of the second intrinsic amorphous silicon layer (3); the first TCO layer (6) is arranged on the upper surface of the p-type doped amorphous silicon emitter layer (4); the second TCO layer (7) is arranged on the lower surface of the n-type doped amorphous silicon back field layer (5), wherein the work function of the first TCO layer (6) is higher than that of the second TCO layer (7); and the copper grid line electrode layers (8) are respectively arranged on the upper surface of the first TCO layer (6) and the lower surface of the second TCO layer (7).
In addition, the silicon heterojunction solar cell according to the above embodiment of the invention may also have the following additional technical features:
in some examples, the first TCO layer (6) adopts a TCO film with a work function in a range of 5.0-6.8 eV, the TCO film is doped indium oxide with doping impurities of at least one of tin, tungsten, molybdenum, titanium, gallium, zinc, cerium and hydrogen, and the thickness of the TCO film is 70-100 nm.
In some examples, the second TCO layer (7) adopts a TCO film with the work function in the range of 3.6-4.9 eV, the TCO film is tin-doped indium oxide or tungsten-doped indium oxide or zinc-doped aluminum oxide, and the thickness of the TCO film is 70-110 nm.
In some examples, the first TCO layer (6) and the second TCO layer (7) are formed by at least one of magnetron sputtering, evaporation, or RPD.
In some examples, the first TCO layer (6) is composed of a buffer layer TCO-paSi (61) and a work function matching layer TCO-Cu (62), the TCO-paSi (61) is arranged on the upper surface of the p-type doped amorphous silicon emitter layer (4), and the TCO-Cu (62) is arranged on the upper surface of the TCO-paSi (61).
In some examples, the second TCO layer (7) is composed of a buffer TCO-naSi (71) and a work function matching layer TCO-Cu (72), the TCO-naSi (71) is disposed on a lower surface of the n-type doped amorphous silicon back field layer (5), and the TCO-Cu (72) is disposed on a lower surface of the TCO-naSi (71).
In some examples, the buffer layers TCO-paSi (61) and TCO-nasI (71) are prepared by a low damage process and have a thickness of 3-8 nm.
In some examples, the TCO-paSi (61) and the TCO-Cu (62) adopt TCO thin films with work functions in the range of 5.0-6.8 eV, the TCO thin films are doped indium oxide doped with at least one of tin, tungsten, molybdenum, titanium, gallium, zinc, cerium and hydrogen, and the TCO thin films of the TCO-Cu (62) have thicknesses of 70-100 nm.
In some examples, the TCO-nasI (71) and the TCO-Cu (72) adopt TCO thin films with work functions in the range of 3.6-4.9 eV, the TCO thin films are tin-doped indium oxide or tungsten-doped indium oxide or zinc-doped aluminum oxide, and the thickness of the TCO thin film of the TCO-Cu (72) is 70-110 nm.
Aiming at the problem that the work functions of the front film and the back film of the silicon heterojunction solar cell are different in the carrier transport process when the TCOs on the front surface and the back surface of the silicon heterojunction solar cell adopt single doped indium oxide films in the prior art, the TCOs on the front surface and the back surface of the silicon heterojunction solar cell provided by the embodiment of the invention adopt TCO materials with different work functions, and the TCO films on the front surface and the back surface can respectively form good contact with a p-type amorphous silicon emitter and an n-type amorphous silicon back surface field, so that the work function requirement of carrier transport is met, the contact resistance is favorably reduced, and the cell efficiency is improved.
Additional aspects and advantages of the invention will be set forth in part in the description which follows and, in part, will be obvious from the description, or may be learned by practice of the invention.
Drawings
The above and/or additional aspects and advantages of the present invention will become apparent and readily appreciated from the following description of the embodiments, taken in conjunction with the accompanying drawings of which:
FIG. 1 is a schematic diagram of a prior art silicon heterojunction solar cell;
fig. 2 is a schematic structural diagram of a silicon heterojunction solar cell according to an embodiment of the invention;
FIG. 3 is a schematic structural view of a first TCO layer according to one embodiment of the invention;
FIG. 4 is a schematic diagram of a structure of a second TCO layer according to one embodiment of the invention.
Detailed Description
Reference will now be made in detail to embodiments of the present invention, examples of which are illustrated in the accompanying drawings, wherein like or similar reference numerals refer to the same or similar elements or elements having the same or similar function throughout. The embodiments described below with reference to the accompanying drawings are illustrative only for the purpose of explaining the present invention, and are not to be construed as limiting the present invention.
In the description of the present invention, it is to be understood that the terms "center", "longitudinal", "lateral", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", and the like, indicate orientations or positional relationships based on those shown in the drawings, and are used only for convenience in describing the present invention and for simplicity in description, and do not indicate or imply that the referenced devices or elements must have a particular orientation, be constructed and operated in a particular orientation, and thus, are not to be construed as limiting the present invention. Furthermore, the terms "first" and "second" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.
In the description of the present invention, it should be noted that, unless otherwise explicitly specified or limited, the terms "mounted," "connected," and "connected" are to be construed broadly, e.g., as meaning either a fixed connection, a removable connection, or an integral connection; can be mechanically or electrically connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meanings of the above terms in the present invention can be understood in specific cases to those skilled in the art.
The silicon heterojunction solar cell of the embodiment of the invention is described below with reference to the accompanying drawings.
Fig. 2 is a schematic structural diagram of a silicon heterojunction solar cell according to an embodiment of the invention.
As shown in fig. 2, the silicon heterojunction solar cell includes: an n-type crystalline silicon substrate (1); a first intrinsic amorphous silicon layer (2) and a second intrinsic amorphous silicon layer (3) which are respectively arranged on the upper surface and the lower surface of the n-type crystalline silicon substrate (1); a p-type doped amorphous silicon emitter layer (4) arranged on the upper surface of the first intrinsic amorphous silicon layer (2); an n-type doped amorphous silicon back field layer (5) arranged on the lower surface of the second intrinsic amorphous silicon layer (3); the first TCO layer (6) is arranged on the upper surface of the p-type doped amorphous silicon emitter layer (4); the second TCO layer (7) is arranged on the lower surface of the n-type doped amorphous silicon back field layer (5), wherein the work function of the first TCO layer (6) is higher than that of the second TCO layer (7); and the copper grid line electrode layers (8) are respectively arranged on the upper surface of the first TCO layer (6) and the lower surface of the second TCO layer (7).
In one embodiment of the invention, the first TCO layer (6) adopts a TCO film with a work function in a range of 5.0-6.8 eV, the TCO film is doped indium oxide with doping impurities of at least one of tin, tungsten, molybdenum, titanium, gallium, zinc, cerium and hydrogen, and the thickness of the TCO film is 70-100 nm.
In one embodiment of the invention, the second TCO layer (7) adopts a TCO film with the work function within the range of 3.6-4.9 eV, the material of the TCO film is tin-doped indium oxide or tungsten-doped indium oxide or zinc-doped aluminum oxide, and the thickness of the TCO film is 70-110 nm.
In one embodiment of the invention, the first TCO layer (6) and the second TCO layer (7) may be formed by at least one of magnetron sputtering, evaporation or RPD.
In summary, the silicon heterojunction solar cell of the embodiment of the invention is a silicon heterojunction solar cell with a high-matching TCO film, and the first TCO layer (6) and the second TCO layer (7) respectively adopt TCO films with different work functions to form good matching with amorphous silicon. Specifically, the TCO film with the work function within the range of 5.0-6.8 eV is adopted in the first TCO layer (6), the built-in electric field direction of a Schottky junction formed by TCO and an a-Si: H (p) emitter is pointed to TCO from the a-Si: H (p) film due to the higher work function, and the built-in electric field direction of the a-Si: H/c-Si junction is consistent, so that the transport of holes is enhanced. The second TCO layer (7) adopts a TCO film with the work function within the range of 3.6-4.9 eV, and the lower work function is beneficial to the transport of current carriers on the back of the cell.
In one embodiment of the invention, as shown in fig. 3, the first TCO layer (6) is composed of a buffer TCO-paSi (61) and a work function matching layer TCO-Cu (62), the TCO-paSi (61) is disposed on the upper surface of the p-type doped amorphous silicon emitter layer (4), and the TCO-Cu (62) is disposed on the upper surface of the TCO-paSi (61).
In one embodiment of the invention, as shown in fig. 4, the second TCO layer (7) is composed of a buffer TCO-naSi (71) and a work function matching layer TCO-Cu (72), the TCO-naSi (71) is disposed on the lower surface of the n-type doped amorphous silicon back field layer (5), and the TCO-Cu (72) is disposed on the lower surface of the TCO-naSi (71).
In one embodiment of the invention, the buffer layers TCO-paSi (61) and TCO-nasI (71) are prepared by a low-damage process and have the thickness of 3-8 nm.
In one embodiment of the invention, TCO-paSi (61) and TCO-Cu (62) adopt TCO thin films with work functions in the range of 5.0-6.8 eV, the TCO thin films are doped indium oxide with at least one of tin, tungsten, molybdenum, titanium, gallium, zinc, cerium and hydrogen as dopant, and the thickness of the TCO thin film of the TCO-Cu (62) is 70-100 nm.
In one embodiment of the invention, TCO-naSi (71) and TCO-Cu (72) adopt TCO thin films with work functions in the range of 3.6-4.9 eV, the materials of the TCO thin films are tin-doped indium oxide or tungsten-doped indium oxide or zinc-doped aluminum oxide, and the thickness of the TCO thin film of the TCO-Cu (72) is 70-110 nm.
In summary, in the silicon heterojunction solar cell of the embodiment of the invention, the first TCO layer (6) and the second TCO layer (7) are respectively composed of two TCO films, the buffer layer TCO-paSi (61) arranged on the upper surface of the p-type doped amorphous silicon emitter layer (4) and the buffer layer TCO-naSi (71) arranged on the lower surface of the n-type doped amorphous silicon back field layer (5) have very small bombardment damage to the substrate in the preparation process, and can be used as buffer protection layers for the subsequent deposition of work function matching layers TCO-Cu (62) and TCO-Cu (72), so that the interface quality formed by the TCO films and the amorphous silicon emitter layer or the back field layer is effectively improved.
Aiming at the problem that the work functions of the front film and the back film of the silicon heterojunction solar cell are different in the carrier transport process when the TCOs on the front surface and the back surface of the silicon heterojunction solar cell adopt single doped indium oxide films in the prior art, the TCOs on the front surface and the back surface of the silicon heterojunction solar cell provided by the embodiment of the invention adopt TCO materials with different work functions, and the TCO films on the front surface and the back surface can respectively form good contact with a p-type amorphous silicon emitter and an n-type amorphous silicon back surface field, so that the work function requirement of carrier transport is met, the contact resistance is favorably reduced, and the cell efficiency is improved.
In the description herein, references to the description of the term "one embodiment," "some embodiments," "an example," "a specific example," or "some examples," etc., mean that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the invention. In this specification, the schematic representations of the terms used above do not necessarily refer to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples.
While embodiments of the invention have been shown and described, it will be understood by those of ordinary skill in the art that: various changes, modifications, substitutions and alterations can be made to the embodiments without departing from the principles and spirit of the invention, the scope of which is defined by the claims and their equivalents.
Claims (9)
1. A silicon heterojunction solar cell, comprising:
an n-type crystalline silicon substrate (1);
a first intrinsic amorphous silicon layer (2) and a second intrinsic amorphous silicon layer (3) which are respectively arranged on the upper surface and the lower surface of the n-type crystalline silicon substrate (1);
a p-type doped amorphous silicon emitter layer (4) arranged on the upper surface of the first intrinsic amorphous silicon layer (2);
an n-type doped amorphous silicon back field layer (5) arranged on the lower surface of the second intrinsic amorphous silicon layer (3);
the first TCO layer (6) is arranged on the upper surface of the p-type doped amorphous silicon emitter layer (4);
the second TCO layer (7) is arranged on the lower surface of the n-type doped amorphous silicon back field layer (5), wherein the work function of the first TCO layer (6) is higher than that of the second TCO layer (7);
and the copper grid line electrode layers (8) are respectively arranged on the upper surface of the first TCO layer (6) and the lower surface of the second TCO layer (7).
2. The silicon heterojunction solar cell according to claim 1, wherein the first TCO layer (6) is a TCO film with a work function in a range of 5.0-6.8 eV, the TCO film is a doped indium oxide doped with at least one impurity selected from tin, tungsten, molybdenum, titanium, gallium, zinc, cerium and hydrogen, and the thickness of the TCO film is 70-100 nm.
3. The silicon heterojunction solar cell according to claim 1, wherein the second TCO layer (7) is a TCO film with a work function in a range of 3.6-4.9 eV, the TCO film is a tin-doped indium oxide or a tungsten-doped indium oxide or a zinc-doped aluminum oxide, and the thickness of the TCO film is 70-110 nm.
4. The silicon heterojunction solar cell according to claim 1, wherein the first and second TCO layers (6, 7) are formed by at least one of magnetron sputtering, evaporation or RPD.
5. The silicon heterojunction solar cell according to claim 1, wherein the first TCO layer (6) is composed of a buffer TCO-paSi (61) and a work function matching layer TCO-Cu (62), the TCO-paSi (61) is arranged on the upper surface of the p-type doped amorphous silicon emitter layer (4), and the TCO-Cu (62) is arranged on the upper surface of the TCO-paSi (61).
6. The silicon heterojunction solar cell according to claim 1, wherein the second TCO layer (7) is composed of a buffer TCO-naSi (71) and a work function matching layer TCO-Cu (72), the TCO-naSi (71) is disposed on the lower surface of the n-type doped amorphous silicon back field layer (5), and the TCO-Cu (72) is disposed on the lower surface of the TCO-naSi (71).
7. The silicon heterojunction solar cell according to claim 5 or 6, wherein the buffer layers TCO-paSi (61) and TCO-naSi (71) are prepared by a low damage process and have a thickness of 3-8 nm.
8. The silicon heterojunction solar cell according to claim 5, wherein the TCO-paSi (61) and the TCO-Cu (62) adopt TCO thin films with work functions in the range of 5.0-6.8 eV, the TCO thin films are doped indium oxide doped with at least one of Sn, W, Mo, Ti, Ga, Zn, Ce and H, and the TCO thin films of the TCO-Cu (62) have a thickness of 70-100 nm.
9. The silicon heterojunction solar cell according to claim 6, wherein the TCO-naSi (71) and the TCO-Cu (72) adopt TCO thin films with work functions in the range of 3.6-4.9 eV, the TCO thin films are tin-doped indium oxide, tungsten-doped indium oxide or zinc-doped aluminum oxide, and the thickness of the TCO thin film of the TCO-Cu (72) is 70-110 nm.
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