CN109037370A - 一种硅基太阳能电池 - Google Patents
一种硅基太阳能电池 Download PDFInfo
- Publication number
- CN109037370A CN109037370A CN201810753798.5A CN201810753798A CN109037370A CN 109037370 A CN109037370 A CN 109037370A CN 201810753798 A CN201810753798 A CN 201810753798A CN 109037370 A CN109037370 A CN 109037370A
- Authority
- CN
- China
- Prior art keywords
- graphene
- film
- oxide membrane
- layer
- graphene oxide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 title claims abstract description 20
- 239000000377 silicon dioxide Substances 0.000 title claims abstract description 10
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical group [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 120
- 229910021389 graphene Inorganic materials 0.000 claims abstract description 118
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 26
- 239000010703 silicon Substances 0.000 claims abstract description 26
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 23
- 238000000034 method Methods 0.000 claims abstract description 22
- 239000012528 membrane Substances 0.000 claims description 32
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 25
- 239000000758 substrate Substances 0.000 claims description 10
- 238000001704 evaporation Methods 0.000 claims description 7
- 230000008020 evaporation Effects 0.000 claims description 7
- 229910002804 graphite Inorganic materials 0.000 claims description 7
- 239000010439 graphite Substances 0.000 claims description 7
- -1 graphite Alkene Chemical class 0.000 claims description 5
- 230000003647 oxidation Effects 0.000 claims description 5
- 238000007254 oxidation reaction Methods 0.000 claims description 5
- 230000008569 process Effects 0.000 abstract description 6
- 230000007547 defect Effects 0.000 abstract description 4
- 230000009471 action Effects 0.000 abstract description 3
- 230000005540 biological transmission Effects 0.000 abstract description 2
- 238000002834 transmittance Methods 0.000 abstract description 2
- 239000010410 layer Substances 0.000 description 18
- 238000006243 chemical reaction Methods 0.000 description 7
- 230000009467 reduction Effects 0.000 description 5
- 239000002356 single layer Substances 0.000 description 5
- 238000000967 suction filtration Methods 0.000 description 5
- 150000001336 alkenes Chemical class 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 230000007613 environmental effect Effects 0.000 description 3
- 229920000642 polymer Polymers 0.000 description 3
- 238000004630 atomic force microscopy Methods 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 230000000052 comparative effect Effects 0.000 description 2
- 230000001276 controlling effect Effects 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 230000009466 transformation Effects 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 1
- 239000002120 nanofilm Substances 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
- H01L31/0745—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/028—Inorganic materials including, apart from doping material or other impurities, only elements of Group IV of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
- H01L31/035281—Shape of the body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68368—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used in a transfer process involving at least two transfer steps, i.e. including an intermediate handle substrate
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Landscapes
- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Manufacturing & Machinery (AREA)
- Inorganic Chemistry (AREA)
- Life Sciences & Earth Sciences (AREA)
- Composite Materials (AREA)
- Materials Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Sustainable Energy (AREA)
- Carbon And Carbon Compounds (AREA)
- Hybrid Cells (AREA)
Abstract
本发明公开了一种硅基太阳能电池，包括透明电极，透明电极为石墨烯薄膜，厚度不大于20nm，本发明用抽滤的方法制备薄膜，保证了薄膜的均匀性以及器件的稳定性；采用了水转移的方法，将石墨烯膜的厚度控制在纳米级别，提高了薄膜的透光率；转移过程中，引入了微观褶皱，增加了薄膜和光敏层的接触面积；高温处理后，石墨烯缺陷少，薄膜强度高，可以耐受柔性电极反复折叠过程中的应力变化。整个过程简单、绿色、极易操作。相比而言，该石墨烯薄膜具有高的电子迁移率，相对较低的光透过率，通过不断反射增加硅的太阳能吸收率，且其本身产生的电子孔穴，可以在内建电场的作用下分离，提高光转化效率。
Description
技术领域
本发明涉及太阳能电池，尤其涉及一种硅基太阳能电池。
背景技术
随着环境问题的日益严重，化石能源的无节制应用带来的环境问题日益引起大人们的关注。人们迫切希望找到可再生，无污染的新能源来替代重污染的化石能源。而太阳能作为地球声明之源，一直是人们关注的对象。其中石墨烯/硅太阳能电池是其中的应用之一，它是应用石墨烯(4.5eV)和硅(4.31eV)的功函不同而构建异质结，在太阳光照射到两者表面时，硅中的价电子吸收入射光中的光子能量发生跃迁，从而形成电子-空穴对。在内建电场的作用下，电子-空穴对被分离，并可经由石墨烯和硅传输到外电路当中，实现太阳能到电能的转换。
但是传统的石墨烯/硅太阳能电池是应用单层石墨烯或者少层机械剥离石墨烯作为透明导电电极，其存在以下几方面的问题，其一，石墨烯厚度低，吸光率太低；其二，单层石墨烯转移缺陷多，电子迁移率低，不利于光电子的传输；第三，少层石墨烯面积太小，不适合大量制备。
为此，我们设计了高强度、高导电、高透明的石墨烯膜，用于克服传统石墨烯存在的以上各种问题，并通过提高厚度，增加界面反射，同时石墨烯本身也可以吸收太阳能，在内建电场作用下，增加光的转化效率。
发明内容
本发明的目的是克服现有技术的不足，提供一种硅基太阳能电池。
本发明的目的是通过以下技术方案实现的：一种硅基太阳能电池，具有两层结构，其中一层为硅层，另一层为石墨烯层，石墨烯层与硅层贴合；石墨烯层厚度不大于20nm，通过以下方法制备得到：
(1)在AAO基底膜上抽滤得到氧化石墨烯膜；
(2)将表面贴合有石墨烯膜的AAO基底膜以氧化石墨烯膜所在的面朝上，置于水面上；按压AAO基底膜，使得AAO基底膜下沉，氧化石墨烯膜漂浮于水面。
(3)用硅片将漂浮于水面的氧化石墨烯膜从下往上捞起，使得石墨烯膜平铺于基底表面；
(4)室温下蒸发氧化石墨烯膜中的水分，使得氧化石墨烯膜水含量大于50wt％；将蒸发处理后的氧化石墨烯膜进行冷冻干燥，氧化石墨烯膜从硅片表面脱离。
(5)对氧化石墨烯膜在2000～3000℃进行还原，使得其电导率大于0.5MS/m。
进一步地，所述步骤2中，按压位置为AAO基底膜的边缘。
进一步地，所述步骤1中石墨烯的厚度为4nm。
进一步地，所述AAO基底膜的表面的孔隙率不小于40％。
本发明的有益效果在于：本发明用抽滤的方法制备薄膜，保证了薄膜的均匀性以及器件的稳定性；采用了水转移的方法，将石墨烯膜的厚度控制在纳米级别，提高了薄膜的透光率；转移过程中，引入了微观褶皱，增加了薄膜和光敏层的接触面积；高温处理后，石墨烯膜缺陷含量极低，电导率和电子迁移率高，有利于有机太阳能电池的光电子传输；高温处理后，石墨烯缺陷少，薄膜强度高，可以耐受柔性电极反复折叠过程中的应力变化。整个过程简单、绿色、极易操作。在保证透明的同时，保证了极大的导电率和力学承载性能，可使得电池在使用过程中耐受各种环境问题以及外界干扰。相比而言，石墨烯具有更高的电子迁移率，有利于电子传输；相对较高的厚度，提高了石墨烯的吸光率；同时，增加界面反射，同时石墨烯本身也可以吸收太阳能，在内建电场作用下，增加光的转化效率；另外，相对于少层石墨烯，本专利制备的薄膜尺寸大，可操作性更强。
附图说明
图1为AAO基底膜剥离石墨烯膜的流程示意图。
图2为实施例1AAO基底膜剥离石墨烯膜的实验过程图。
图3为实施例1制得的石墨烯膜的原子力显微镜图。
图4为实施例1制备得到的石墨烯膜的扫描图。
图5为实施例2制得的石墨烯膜的原子力显微镜图。
图6为对比例1MCE基底膜剥离石墨烯膜的实验过程图。
具体实施方式
实施例1：
如图1所示，通过控制石墨烯溶液的浓度，通过抽滤方法在AAO基底膜抽滤得到超薄的氧化石墨烯膜；将表面贴合有氧化石墨烯膜的AAO基底膜(孔隙率为40％)，以石墨烯膜所在的面朝上，置于水面上，如图1a和2a；按压AAO基底膜，如图2b，AAO基底膜开始下沉，如图2c，最后，AAO基底膜沉于杯底，石墨烯膜(虚线圈内)漂浮于水面，如图1b和2d。
用硅片将漂浮于水面的石墨烯膜从下往上捞起，使得石墨烯膜平铺于基底表面，室温下蒸发氧化石墨烯膜中的水分30分钟，测得氧化石墨烯膜水含量为54wt％；将蒸发处理后的氧化石墨烯膜进行冷冻干燥，氧化石墨烯膜从硅片表面脱离；如图4所示，表面具有大量褶皱；通过原子力显微镜测试其厚度为4nm，如图3所示。
对氧化石墨烯膜利用2000℃热还原，还原1h后测得其电导率为0.5MS/m，石墨烯膜强度为10GPa。
将上述石墨烯膜平铺于一硅基底上。以石墨烯所在面为受光面，获得本发明太阳能电池①；在相同的硅基底上利用聚合物辅助转移法构建单层石墨烯，获得太阳能电池②；相比于电池②，本发明的太阳能电池①的光电转换效率提高119％，石墨烯电池①在使用8760h后，太阳能电池的光电转换效率保持在原来的97％以上。
实施例2：
通过控制石墨烯溶液的浓度，通过抽滤方法在AAO基底膜抽滤得到超薄的还原氧化石墨烯膜；将表面贴合有氧化石墨烯膜的AAO基底膜(孔隙率为60％)，以石墨烯膜所在的面朝上，置于水面上，按压AAO基底膜边缘，AAO基底膜开始下沉，最后，AAO基底膜沉于杯底，石墨烯膜漂浮于水面，石墨烯膜成功剥离。
用硅片将漂浮于水面的石墨烯膜从下往上捞起，使得石墨烯膜平铺于基底表面，室温下蒸发氧化石墨烯膜中的水分30分钟，测得氧化石墨烯膜水含量为67wt％；将蒸发处理后的氧化石墨烯膜进行冷冻干燥，氧化石墨烯膜从硅片表面脱离，得到表面褶皱的石墨烯膜，通过原子力显微镜测试其厚度为14nm，如图5所示。
对氧化石墨烯膜利用2000℃热还原，还原1h后测得其电导率为0.6MS/m，石墨烯膜强度为7GPa。
将上述石墨烯膜平铺于一硅基底上。以石墨烯所在面为受光面，获得本发明太阳能电池①；在相同的硅基底上利用聚合物辅助转移法构建单层石墨烯，获得太阳能电池②；相比于电池②，本发明的太阳能电池①的光电转换效率提高108％，石墨烯电池①在使用8760h后，太阳能电池的光电转换效率保持在原来的94％以上。
实施例3：
通过控制石墨烯溶液的浓度，通过抽滤方法在AAO基底膜抽滤得到超薄的还原氧化石墨烯膜；将表面贴合有氧化石墨烯膜的AAO基底膜(孔隙率为60％)，以石墨烯膜所在的面朝上，置于水面上，按压AAO基底膜边缘，AAO基底膜开始下沉，最后，AAO基底膜沉于杯底，石墨烯膜漂浮于水面，石墨烯膜成功剥离。
用硅片将漂浮于水面的石墨烯膜从下往上捞起，使得石墨烯膜平铺于基底表面，室温下蒸发氧化石墨烯膜中的水分30分钟，测得氧化石墨烯膜水含量为75wt％；将蒸发处理后的氧化石墨烯膜进行冷冻干燥，氧化石墨烯膜从硅片表面脱离，得到表面褶皱的石墨烯膜，通过原子力显微镜测试其厚度为20nm。
对氧化石墨烯膜利用3000℃热还原，还原0.2h后后测得其电导率0.8MS/m。石墨烯膜强度为9GPa。
将上述石墨烯膜平铺于一硅基底上。以石墨烯所在面为受光面，获得本发明太阳能电池①；在相同的硅基底上利用聚合物辅助转移法构建单层石墨烯，获得太阳能电池②；相比于电池②，本发明的太阳能电池①的光电转换效率提高114％，石墨烯电池①在使用8760h后，太阳能电池的光电转换效率保持在原来的98％以上。
对比例1
按照如实施例2的抽滤方法，在MCE基底膜抽滤得到厚度为14nm的还原氧化石墨烯膜，然后将表面贴合有还原氧化石墨烯膜的MCE基底膜(孔隙率为60％)，以石墨烯膜所在的面朝上，置于水面上，图6a所示，按压MCE基底膜边缘，MCE基底膜不下沉，图6b所示，石墨烯膜剥离失败。
需要说明的是，抽滤法只目前公认的最均匀制备石墨烯膜的方法，在一定的抽滤液量下，可以调控浓度来对石墨烯膜的厚度进行控制，厚度最低可以是一层石墨烯，随着石墨烯浓度的增加，在压力作用下，新增的石墨烯逐步填充到第一层石墨烯的间隙，使得第一层石墨烯逐步完全填充，进而发展成第二层，不断重复以上步骤，可以制备厚度跨越2层到上万层石墨烯的石墨烯纳米膜。因此，本领域技术人员可通过简单的实验参数调整即可获得厚度为4nm的石墨烯膜。
Claims (4)
1.一种硅基太阳能电池，其特征在于，具有两层结构，其中一层为硅层，另一层为石墨烯层，石墨烯层与硅层贴合；石墨烯层厚度不大于20nm，通过以下方法制备得到：
(1)在AAO基底膜上抽滤得到氧化石墨烯膜；
(2)将表面贴合有石墨烯膜的AAO基底膜以氧化石墨烯膜所在的面朝上，置于水面上；按压AAO基底膜，使得AAO基底膜下沉，氧化石墨烯膜漂浮于水面；
(3)用硅片将漂浮于水面的氧化石墨烯膜从下往上捞起，使得石墨烯膜平铺于基底表面；
(4)室温下蒸发氧化石墨烯膜中的水分，使得氧化石墨烯膜水含量大于50wt％；将蒸发处理后的氧化石墨烯膜进行冷冻干燥，氧化石墨烯膜从硅片表面脱离；
(5)对氧化石墨烯膜在2000～3000℃进行还原，使得其电导率大于0.5MS/m。
2.根据权利要求1所述的硅基太阳能电池，其特征在于，所述步骤2中，按压位置为AAO基底膜的边缘。
3.根据权利要求1所述的硅基太阳能电池，其特征在于，所述步骤1中石墨烯的厚度为4nm。
4.根据权利要求1所述的硅基太阳能电池，其特征在于，所述AAO基底膜的表面的孔隙率不小于40％。
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810753798.5A CN109037370B (zh) | 2018-07-10 | 2018-07-10 | 一种硅基太阳能电池 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810753798.5A CN109037370B (zh) | 2018-07-10 | 2018-07-10 | 一种硅基太阳能电池 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN109037370A true CN109037370A (zh) | 2018-12-18 |
| CN109037370B CN109037370B (zh) | 2020-05-08 |
Family
ID=64641876
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810753798.5A Active CN109037370B (zh) | 2018-07-10 | 2018-07-10 | 一种硅基太阳能电池 |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN109037370B (zh) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109775697A (zh) * | 2019-03-17 | 2019-05-21 | 杭州高烯科技有限公司 | 一种高导电可折叠石墨烯膜及其制备方法与应用 |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20120000516A1 (en) * | 2010-07-01 | 2012-01-05 | Egypt Nanotechnology Center | Graphene Solar Cell |
| CN104617175A (zh) * | 2015-01-16 | 2015-05-13 | 浙江大学 | 一种石墨烯/非晶硅太阳能电池及其制备方法 |
| CN107651673A (zh) * | 2017-10-13 | 2018-02-02 | 浙江大学 | 一种纳米级厚度独立自支撑褶皱石墨烯膜及其制备方法 |
| CN107915220A (zh) * | 2017-11-17 | 2018-04-17 | 合肥国轩高科动力能源有限公司 | 一种气液界面分离法转移石墨烯图案化薄膜的方法 |
-
2018
- 2018-07-10 CN CN201810753798.5A patent/CN109037370B/zh active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20120000516A1 (en) * | 2010-07-01 | 2012-01-05 | Egypt Nanotechnology Center | Graphene Solar Cell |
| CN104617175A (zh) * | 2015-01-16 | 2015-05-13 | 浙江大学 | 一种石墨烯/非晶硅太阳能电池及其制备方法 |
| CN107651673A (zh) * | 2017-10-13 | 2018-02-02 | 浙江大学 | 一种纳米级厚度独立自支撑褶皱石墨烯膜及其制备方法 |
| CN107915220A (zh) * | 2017-11-17 | 2018-04-17 | 合肥国轩高科动力能源有限公司 | 一种气液界面分离法转移石墨烯图案化薄膜的方法 |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109775697A (zh) * | 2019-03-17 | 2019-05-21 | 杭州高烯科技有限公司 | 一种高导电可折叠石墨烯膜及其制备方法与应用 |
| CN109775697B (zh) * | 2019-03-17 | 2020-08-18 | 杭州高烯科技有限公司 | 一种高导电可折叠石墨烯膜及其制备方法与应用 |
Also Published As
| Publication number | Publication date |
|---|---|
| CN109037370B (zh) | 2020-05-08 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TWI669781B (zh) | 包括石墨烯基底層之電子裝置及其製造方法（一） | |
| CN106601857B (zh) | 基于掺硼硅量子点/石墨烯/二氧化硅的光电导探测器及制备方法 | |
| Chou et al. | Hierarchically Structured ZnO Film for Dye‐Sensitized Solar Cells with Enhanced Energy Conversion Efficiency | |
| CN104638049B (zh) | 一种p型石墨烯/n型锗纳米锥阵列肖特基结红外光电探测器及其制备方法 | |
| CN104993059B (zh) | 一种硅基钙钛矿异质结太阳电池及其制备方法 | |
| CN109911888A (zh) | 一种无缺陷乱层堆叠石墨烯纳米膜的制备方法与应用 | |
| WO2010025291A3 (en) | Four terminal multi-junction thin film photovoltaic device and method | |
| CN111725348B (zh) | 高光响应TiO2/MoS2异质结可见光探测器及制备 | |
| CN109285891A (zh) | 一种石墨烯二维异质结柔性器件结构及其制备方法 | |
| CN102299206A (zh) | 一种异质结太阳电池及其制备方法 | |
| CN113097319B (zh) | 一种碳化硅/二硫化锡异质结光电晶体管及其制备方法和应用 | |
| CN107919403A (zh) | 一种高效硒碲化镉合金纳米晶太阳电池及其制备方法 | |
| CN104851935B (zh) | 一种电场调控的石墨烯/磷化铟太阳电池及其制备方法 | |
| CN107742580B (zh) | 一种基于吸光涂料制备量子点太阳电池的方法 | |
| CN115832108A (zh) | 一种栅极可调高灵敏偏振探测器的制备方法 | |
| CN109037370A (zh) | 一种硅基太阳能电池 | |
| WO2019119869A1 (zh) | 一种太阳能异质结电池及其制备方法 | |
| CN108963021A (zh) | 一种基于化学修饰的黑磷材料太阳能电池及制备方法 | |
| CN109036851A (zh) | 一种石墨烯基薄膜太阳能电池 | |
| CN104377252B (zh) | 一种柔性铜基硫属半导体薄膜太阳电池窗口层结构 | |
| CN103872183B (zh) | 一种单面抛光方法 | |
| CN111081886B (zh) | 基于氧化镓钙钛矿多层堆叠结构的pin二极管及其制备方法 | |
| Shi et al. | A green route and rational design for ZnO-based high-efficiency photovoltaics | |
| CN109950048A (zh) | 一种石墨烯基薄膜太阳能电池 | |
| CN111354804B (zh) | 基于Si锥/CuO异质结的自驱动光电探测器及其制备方法 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |