CN104617175A - 一种石墨烯/非晶硅太阳能电池及其制备方法 - Google Patents

一种石墨烯/非晶硅太阳能电池及其制备方法 Download PDF

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CN104617175A
CN104617175A CN201510021261.6A CN201510021261A CN104617175A CN 104617175 A CN104617175 A CN 104617175A CN 201510021261 A CN201510021261 A CN 201510021261A CN 104617175 A CN104617175 A CN 104617175A
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林时胜
徐志娟
李晓强
王朋
章盛娇
吴志乾
钟汇凯
徐文丽
陈红胜
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Zhejiang University ZJU
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    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
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Abstract

本发明涉及一种石墨烯/非晶硅太阳电池及其制备方法，该电池自下而上依次有衬底、导电镀膜层、n型非晶硅薄膜层、i型非晶硅薄膜层及石墨烯层，所述的太阳电池还设有第一电极和第二电极，第一电极设置在导电镀膜层上，第二电极设置在石墨烯层上。其制备方法如下：先在衬底上沉积导电镀膜层，再沉积n型非晶硅薄膜层，再沉积i型非晶硅薄膜层；然后将石墨烯转移至非晶硅层上；最后在石墨烯层及导电镀膜层上分别制作电极，获得太阳电池。本发明在低成本及简单工艺的基础上可获得转化效率高的新型太阳电池。

Description

一种石墨烯/非晶硅太阳能电池及其制备方法
技术领域
本发明涉及一种太阳电池及其制备方法，尤其涉及石墨烯/非晶硅太阳电池及其制备方法，属于太阳能技术领域。
背景技术
现在能源危机和环境污染是人类面临的重大挑战，开发新能源和可再生能源至关重要，太阳能电池作为一种新型绿色能源，影响着人类的可持续发展。目前，晶体硅太阳能电池占据市场~90%的份额，因为硅是地球上存储的第二大元素。在硅系太阳电池中，单晶硅转换效率高，但电池发电成本较高，限制了其广泛应用，而非晶硅在可见光内有较高的吸收系数，可实现低成本大面积的薄膜沉积，非晶硅薄膜技术将是今后太阳能电池的市场主流。
自石墨烯材料发现以来，其在电学、光学、磁学以及力学方面表现出的优异性质如极高的载流子迁移率、高透光性、高的杨氏模量等引发了石墨烯在诸多领域应用的憧憬。其中石墨烯在太阳能电池领域的应用研究为石墨烯在能源领域的应用打开了大门。
发明内容
本发明的目的在于提供一种光电转化效率高，工艺简单成本低的石墨烯/非晶硅太阳电池及其制备方法。
本发明的石墨烯/非晶硅太阳电池，自下而上依次有衬底、导电镀膜层、n型非晶硅薄膜层、i型非晶硅薄膜层及石墨烯层，所述的太阳电池还设有第一电极和第二电极，第一电极设置在导电镀膜层上，第二电极设置在石墨烯层上。
上述技术方案中，所述的导电镀膜层可以为金属、ITO、FTO、n型掺杂氧化锌或p型掺杂氧化锌。
所述的石墨烯层中的石墨烯通常为1-10层。
所述的衬底可以为刚性衬底或柔性衬底。
所述的第一电极和第二电极均可为金、钯、银、钛、铬和镍中的一种或几种的复合电极。
所述的导电镀膜层厚度通常为1纳米至500纳米，n型非晶硅薄膜层厚度通常为5纳米至500纳米，i型非晶硅薄膜层厚度通常为10纳米至10微米。
制备上述的石墨烯/非晶硅太阳电池的方法，包括如下步骤：
1）在洁净的衬底上生长导电镀膜层；
2）在导电镀膜层上沉积n型非晶硅薄膜层，再沉积i型非晶硅薄膜层，并在导电镀膜层表面预留生长第一电极的面积；
3）将石墨烯转移至i型非晶硅薄膜层上获得石墨烯层；
4）在导电镀膜层上沉积第一电极，并在石墨烯层上沉积第二电极。
本发明与现有技术相比具有的有益效果是：与传统非晶硅太阳能电池制造工艺相比，本发明的太阳电池的制备工艺简单，成本较低，便于推广。
附图说明：
图1为石墨烯/非晶硅太阳电池的示意图。
具体实施方式
参照图1，本发明的石墨烯/非晶硅太阳电池自下而上依次有衬底1、导电镀膜层2、n型非晶硅薄膜层3、i型非晶硅薄膜层4及石墨烯层5，所述的太阳电池还设有第一电极6和第二电极7，第一电极6设置在导电镀膜层2上，第二电极7设置在石墨烯层5上。
实施例1：
1）将玻璃衬底在去离子水中清洗干净并吹干；
2）在玻璃衬底上利用磁控溅射沉积500纳米厚的掺铟氧化锡；
3）在掺铟氧化锡层上利用化学气相沉积技术沉积5纳米厚的n型非晶硅薄膜层，再在其上沉积10微米厚的i型非晶硅薄膜层，并在ITO层上预留生长第一电极的面积；
4）将单层石墨烯转移至i型非晶硅薄膜层上；
5）在石墨烯上以及ITO层预留面积处涂覆银浆并烘干，得到石墨烯/非晶硅太阳电池。
实施例2：
1）将柔性PET衬底在去离子水中清洗干净并吹干；
2）在PET衬底上利用磁控溅射沉积1纳米厚的金；
3）在金导电层上利用等离子增强化学气相沉积技术生长5纳米厚的n型非晶硅薄膜层，再利用同样技术在其上沉积10纳米厚的i型非晶硅薄膜层，并在金导电层上预留生长第一电极的面积；
4）将10层石墨烯转移至i型非晶硅薄膜层上；
5）在石墨烯上以及金导电层上预留面积处涂利用电子束蒸发沉积钛钯银复合电极，得到石墨烯/非晶硅太阳电池。
实施例3：
1）将柔性PI衬底在去离子水中清洗干净并吹干；
2）在PI衬底上利用磁控溅射沉积40纳米厚的AZO；
3）在AZO层上利用等离子增强化学气相沉积技术生长500纳米厚的n型非晶硅薄膜层，再利用同样技术在其上沉积0.8微米厚的i型非晶硅薄膜层，并在AZO层上预留生长第一电极的面积；
4）将5层石墨烯转移至i型非晶硅薄膜层上；
5）在石墨烯上以及AZO层上预留面积处涂利用热蒸发技术沉积镍电极，得到石墨烯/非晶硅太阳电池。

Claims (7)

1.一种石墨烯/非晶硅太阳电池，其特征在于自下而上依次有衬底（1）、导电镀膜层（2）、n型非晶硅薄膜层（3）、i型非晶硅薄膜层（4）及石墨烯层（5），所述的太阳电池还设有第一电极（6）和第二电极（7），第一电极（6）设置在导电镀膜层（2）上，第二电极（7）设置在石墨烯层（5）上。
2.根据权利要求1所述的石墨烯/非晶硅太阳电池，其特征在于所述的导电镀膜层（2）为金属、ITO、FTO、n型掺杂氧化锌或p型掺杂氧化锌。
3.根据权利要求1所述的石墨烯/非晶硅太阳电池，其特征在于所述的石墨烯层（5）中的石墨烯为1-10层。
4. 根据权利要求1所述的石墨烯/非晶硅太阳电池，其特征在于所述的衬底（1）为刚性衬底或柔性衬底。
5. 根据权利要求1所述的石墨烯/非晶硅太阳电池，其特征在于所述的第一电极（6）为金、钯、银、钛、铬和镍中的一种或几种的复合电极，所述的第二电极（7）为金、钯、银、钛、铬和镍中的一种或几种的复合电极。
6. 根据权利要求1所述的石墨烯/非晶硅太阳电池，其特征在于所述的导电镀膜层（2）厚度为1纳米至500纳米，n型非晶硅薄膜层（3）厚度为5纳米至500纳米，i型非晶硅薄膜层（4）厚度为10纳米至10微米。
7. 制备如权利要求1~6任一项所述的石墨烯/非晶硅太阳电池的方法，其特征在于包括如下步骤：
1）在洁净的衬底（1）上生长导电镀膜层（2）；
2）在导电镀膜层（2）上沉积n型非晶硅薄膜层（3），再沉积i型非晶硅薄膜层（4），并在导电镀膜层（2）表面预留生长第一电极（6）的面积；
3）将石墨烯转移至i型非晶硅薄膜层（4）上，获得石墨烯层（5）；
4）在导电镀膜层（2）上沉积第一电极（6），并在石墨烯层（5）上沉积第二电极（7）。
CN201510021261.6A 2015-01-16 2015-01-16 一种石墨烯/非晶硅太阳能电池及其制备方法 Pending CN104617175A (zh)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109037370A (zh) * 2018-07-10 2018-12-18 浙江大学 一种硅基太阳能电池
CN109065647A (zh) * 2018-10-18 2018-12-21 君泰创新（北京）科技有限公司 太阳能电池及其制备方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109037370A (zh) * 2018-07-10 2018-12-18 浙江大学 一种硅基太阳能电池
CN109065647A (zh) * 2018-10-18 2018-12-21 君泰创新（北京）科技有限公司 太阳能电池及其制备方法

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