CN109023290B - 基于固体碳源的二维碳纳米材料制备方法和装置 - Google Patents
基于固体碳源的二维碳纳米材料制备方法和装置 Download PDFInfo
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- CN109023290B CN109023290B CN201810645355.4A CN201810645355A CN109023290B CN 109023290 B CN109023290 B CN 109023290B CN 201810645355 A CN201810645355 A CN 201810645355A CN 109023290 B CN109023290 B CN 109023290B
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- vacuum chamber
- carbon source
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/26—Deposition of carbon only
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
- C23C16/513—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using plasma jets
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- Physics & Mathematics (AREA)
- Organic Chemistry (AREA)
- Nanotechnology (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- General Chemical & Material Sciences (AREA)
- Plasma & Fusion (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Crystallography & Structural Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Inorganic Chemistry (AREA)
- Carbon And Carbon Compounds (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
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Application Number | Priority Date | Filing Date | Title |
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CN201810645355.4A CN109023290B (zh) | 2018-06-21 | 2018-06-21 | 基于固体碳源的二维碳纳米材料制备方法和装置 |
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CN201810645355.4A CN109023290B (zh) | 2018-06-21 | 2018-06-21 | 基于固体碳源的二维碳纳米材料制备方法和装置 |
Publications (2)
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CN109023290A CN109023290A (zh) | 2018-12-18 |
CN109023290B true CN109023290B (zh) | 2020-08-28 |
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CN201810645355.4A Active CN109023290B (zh) | 2018-06-21 | 2018-06-21 | 基于固体碳源的二维碳纳米材料制备方法和装置 |
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Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
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CN109536930B (zh) * | 2018-12-27 | 2023-07-18 | 安徽贝意克设备技术有限公司 | 一种等离子体增强的多源二维材料制备设备及其工作方法 |
CN112151351A (zh) * | 2020-11-24 | 2020-12-29 | 季华实验室 | 抑制电磁干扰及漏波的结构、射频电源及等离子刻蚀设备 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
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CN102181843A (zh) * | 2011-04-18 | 2011-09-14 | 南昌大学 | 多晶石墨烯薄膜制备工艺及透明电极和制备石墨烯基器件 |
CN204474756U (zh) * | 2015-02-13 | 2015-07-15 | 西安科技大学 | 一种采用固体碳源制备石墨烯的化学气相沉积装置 |
CN108033439B (zh) * | 2018-01-02 | 2021-02-05 | 电子科技大学 | 一种等离子体辅助溅射固态碳源的石墨烯低温制备方法 |
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Effective date of registration: 20221025 Address after: 518,000 1506, Building D1, Nanshan Zhiyuan, No. 1001, Xueyuan Avenue, Changyuan Community, Taoyuan Street, Nanshan District, Shenzhen, Guangdong Patentee after: Shenzhen Huazhi Sensor Technology Partnership (L.P.) Address before: No. 913, Floor 9, Building 1, No. 666, Middle Section of Tianfu Avenue, Hi tech Zone, Chengdu, Sichuan 610000 Patentee before: CHENGDU YIJIE TECHNOLOGY Co.,Ltd. |
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Effective date of registration: 20221117 Address after: 518000 rooms 1502, 1503, 1504, 1505 and 1506, building D1, Nanshan Zhiyuan, No. 1001, Xueyuan Avenue, Changyuan community, Taoyuan Street, Nanshan District, Shenzhen, Guangdong Patentee after: Shenzhen Yixin technology R & D Co.,Ltd. Address before: 518,000 1506, Building D1, Nanshan Zhiyuan, No. 1001, Xueyuan Avenue, Changyuan Community, Taoyuan Street, Nanshan District, Shenzhen, Guangdong Patentee before: Shenzhen Huazhi Sensor Technology Partnership (L.P.) |
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