CN109015314A - A kind of based CMP apparatus - Google Patents
A kind of based CMP apparatus Download PDFInfo
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- CN109015314A CN109015314A CN201811043848.7A CN201811043848A CN109015314A CN 109015314 A CN109015314 A CN 109015314A CN 201811043848 A CN201811043848 A CN 201811043848A CN 109015314 A CN109015314 A CN 109015314A
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- cmp apparatus
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- 238000005498 polishing Methods 0.000 claims abstract description 158
- 238000012546 transfer Methods 0.000 claims abstract description 54
- 230000005540 biological transmission Effects 0.000 claims abstract description 23
- 238000003491 array Methods 0.000 claims abstract description 3
- 238000004140 cleaning Methods 0.000 claims description 39
- 230000007246 mechanism Effects 0.000 claims description 22
- 210000000078 claw Anatomy 0.000 claims description 13
- 238000000034 method Methods 0.000 claims description 9
- 238000001035 drying Methods 0.000 claims description 3
- 238000012545 processing Methods 0.000 abstract description 5
- 239000012530 fluid Substances 0.000 description 13
- 230000000694 effects Effects 0.000 description 8
- 239000000126 substance Substances 0.000 description 8
- 238000010586 diagram Methods 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 6
- 239000007788 liquid Substances 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 230000008901 benefit Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 238000007517 polishing process Methods 0.000 description 3
- 230000009471 action Effects 0.000 description 2
- 238000007521 mechanical polishing technique Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 208000036829 Device dislocation Diseases 0.000 description 1
- 239000003082 abrasive agent Substances 0.000 description 1
- 238000005842 biochemical reaction Methods 0.000 description 1
- 239000003054 catalyst Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 239000008358 core component Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000005304 joining Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 239000007800 oxidant agent Substances 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
- 238000013517 stratification Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 230000001550 time effect Effects 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B29/00—Machines or devices for polishing surfaces on work by means of tools made of soft or flexible material with or without the application of solid or liquid polishing agents
- B24B29/02—Machines or devices for polishing surfaces on work by means of tools made of soft or flexible material with or without the application of solid or liquid polishing agents designed for particular workpieces
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B41/00—Component parts such as frames, beds, carriages, headstocks
- B24B41/005—Feeding or manipulating devices specially adapted to grinding machines
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B41/00—Component parts such as frames, beds, carriages, headstocks
- B24B41/06—Work supports, e.g. adjustable steadies
Abstract
The invention discloses a kind of based CMP apparatus.Polishing module includes that two column polish cell array, it includes that multiple groups polish unit that each column, which polishes unit, the corresponding platform longitudinal arrangement on the column direction for being located at polishing cell array of two column polishing cell arrays, transmission of the wafer between other loading places and the platform and the platform is completed in the vertical direction of platform in the working position of wafer transfer module.Every group of wafer transfer unit as needed can form cascade, complete transmission of the wafer between each platform, realize circulation of the wafer in entirely polishing cell array.Wafer transfer unit in the present invention is because be arranged in the top of the platform, so rubbing head is when platform is loaded or unloads wafer, wafer transfer unit can pass through polishing unit without being interfered at any time, help to reduce the stroke transmitted using this layout, based CMP apparatus processing efficiency is obviously improved on year-on-year basis.
Description
Technical field
The invention belongs to be ground or burnishing device technical field, and in particular to a kind of semiconductor integrated circuit chip manufactured
Based CMP apparatus used in journey.
Background technique
With the rapid development of semicon industry, integrated circuit feature size constantly tends to miniaturize, therefore semiconductor film
The high planarization of film surface has important influence to the high-performance, low cost, high finished product rate of device.
(Chemical Mechanical Planarization, the CMP) technology of chemically mechanical polishing is chemical action and machine
Tool acts on the technology combined.Its working principle is that oxidant, the catalyst etc. first in workpiece surface material and polishing fluid are sent out
Biochemical reaction generates one layer of soft layer relatively easily removed, and then the abrasive material in polishing fluid and the mechanical of polishing pad are made
With lower removal soft layer, expose workpiece surface again, followed by chemical reaction, whereby in chemical action process
Alternately middle with mechanism process completes workpiece surface polishing.
Currently, chemical Mechanical Polishing Technique, which has developed into, collects the technologies such as online measuring, online end point determination, cleaning in one
The chemical Mechanical Polishing Technique of body is the product that integrated circuit develops to miniaturization, multiple stratification, slimming, flatening process.Together
When be also wafer from 200mm to 300mm or even larger diameter transition, improve that productivity, to reduce manufacturing cost, the substrate overall situation flat
Technology necessary to changing.
One typical based CMP apparatus generally includes multiple polishing units and cleaning, wafer transport, does
Dry equal auxiliary devices.Polishing unit generally includes workbench, polishing disk, rubbing head, polishing arm, trimmer, polishing fluid arm etc., throws
CD, rubbing head, polishing arm, trimmer, polishing fluid arm are arranged on the table according to technique Working position.Actual wafer adds
It is found during work, the space layout of the modules such as polishing unit and cleaning, wafer transport is whole for based CMP apparatus
The polishing output (throughput) of body has significant effect.Wafer is in polishing unit and outside and between polishing unit
Transmission usually relies on platform or the device of similar effect is realized, about the space layout of platform and polishing unit, industry
There has been the mode of comparative maturity on boundary, in the technical solution as disclosed in the american documentation literature of Patent No. US5738574, dress
The transfer station and three polishing units for unloading platform effect are square layout.When work, there are four in just for a band
Rectangular distribution rubbing head and rotatable device (carousel) moves downward, and the dress of wafer is successively completed with platform
It unloads.It is noted that in above-mentioned apparatus, three polishing units carry a cleaning device, on position with polishing unit neighbour,
One of them is between corresponding polishing unit and platform.Clearly as a platform needs to share by one
Carousel provide handling to three polishing units and service, therefore the shortcomings that this technology layout is complex technical process.Separately
One United States Patent (USP) US8795032B2 discloses another layout, and four polishings unit therein is arranged side by side, wafer transfer by
It is completed positioned at the loading place of flattening device end and along two linear transport establishments of polishing unit orientation setting, linearly
The other side of transport establishment is cleaning area.Each above-mentioned linear transport establishment provides service for two polishing units, and is every
Two transmission stations are arranged in a polishing unit, and the rubbing head for polishing unit can be from one of transmission station handling wafer.This
Kind layout use polishing unit it is arranged in a straight line, although the disadvantage is that each polishing unit setting two transmission stations, but
Unit is polished in polishing process and only from one of them directly loads and unloads wafer, therefore is said from the angle of wafer transfer efficiency also in need
Improved space.
Summary of the invention
Present invention aims at for wafer transfer low efficiency, conveyer present in existing based CMP apparatus
Structure proposes a kind of based CMP apparatus of novel polishing cell array layout the problem of structure is complicated, and is based on the array
Layout proposes that the top of polishing cell array, therefore the crystalline substance of wafer transfer module is arranged in a kind of wafer transfer module, the module
Circle transmission unit can pass through polishing unit without being interfered at any time.
To achieve the above object, the technical solution adopted by the present invention is a kind of based CMP apparatus, including polishing
Module, cleaning unit and wafer transfer module, cleaning unit clean the wafer after polishing.The polishing module includes two
Column polishing cell array, it includes two or more sets polishing units, the corresponding handling of two column polishing cell arrays that each column, which polishes unit,
Platform longitudinal arrangement on the column direction for being located at polishing cell array, the working position of the wafer transfer module is in being arranged in the vertical direction
Platform vertical direction, complete transmission of the wafer between other loading places and the platform and the platform.
Other above-mentioned loading places are to reprint platform, and the wafer of disengaging polishing unit is temporary by reprinting platform.
Above-mentioned cleaning unit lines up the corresponding two column polishing cell array of two column.
Further, above-mentioned wafer transfer module includes one or more groups of wafer transfer units, every group of wafer transfer unit packet
The guiding device moved in the horizontal direction, horizontal movement driving device, vertical movement mechanism, wafer chuck and wafer claw are included,
Horizontal movement driving device can be slided along guiding device, and vertical movement mechanism can be in a high position and work under two modes of low level
Make, wafer claw is installed on wafer chuck, can do opening and closing operation.
If the line number for polishing cell array is more, every group of wafer transfer unit edge in above-mentioned multiple groups wafer transfer unit
Form cascade on the column direction of two column polishing units, complete wafer in other loading places, such as reprint platform, with each platform and
Transmission between each platform.
As one of the important advantage of wafer transfer module of the present invention, above-mentioned multiple groups wafer transfer unit can be assisted mutually
Make, realizes circulation of the wafer in entirely polishing cell array.
Preferably, above-mentioned wafer chuck is overturning structure, two sets of wafer click-on mechanisms are arranged on its two sides.
It, can be by wafer in polishing unit and cleaning unit equipped with manipulator or similar automatic device in above-mentioned cleaning module
Between transmit, will be by reprinting platform when wafer transfer.
Above-mentioned platform can vertically move on the column direction of polishing cell array, and such a platform can correspond to one
A above polishing unit only needs 3 platforms to correspond to 6 polishing units such as in the layout of 2 column X3 groups.
Preferably, above-mentioned based CMP apparatus can integrate front equipment end unit module at work
(Equipment Front End Module, EFEM).
Preferably, cleaning unit can choose using mega sonic wave cleaning or round brush scrub, it can also be with drying wafer function
Energy.
To prevent liquid and the steam of polishing area from leaking, the polishing of closure can be opened by polishing setting between unit and platform
Door.
The present invention is it is further proposed that a kind of method for carrying out wafer transfer using above-mentioned based CMP apparatus, tool
Body comprises the steps of:
S1: in the initial state, vertical movement mechanism is in a high position, allows wafer chuck along horizontal direction freedom
Walking；
S2: when guiding device runs to the top for reprinting platform or platform, vertical movement mechanism drops to low level, brilliant
The wafer claw crawl wafer installed on circle chuck；
S3: subsequent vertical movement mechanism rises to a high position, horizontal movement driving device run to next reprinting platform or
The top of platform；
S4: vertical movement mechanism drops to low level, and the wafer claw on wafer chuck carries out release wafer operation；
S5: repeating above step, and wafer is allowed to reprint realization transmitting between platform and each platform.
Compared with existing based CMP apparatus technology, the present invention has following advantageous effects:
1, two column, wafer transfer unit layout placed in the middle lined up using polishing unit in the present invention help to reduce and transmits
Stroke, based CMP apparatus processing efficiency promote about 50% on year-on-year basis, and by using modular layout, equipment cloth
Office is more flexible；
2, because wafer can be transferred to another handling from a platform by the wafer transfer unit above platform
Wafer is either brought into or is taken out from polishing unit by platform, and wafer transfer unit is because be arranged in the top of the platform, institute
With rubbing head when platform is loaded or unloads wafer, wafer transfer unit can pass through at any time polishing unit without
It is interfered；
3, corresponding with the layout of above-mentioned polishing unit and wafer transfer unit, the cleaning unit of left and right arrangement passes through cleaning
Manipulator can choose to put wafer causes polishing plus the efficiency of cleaning assembled unit also to be mentioned to any one cleaning unit
It rises；
4, according to production capacity needs, wafer transfer unit can be two sets or two sets or more, single to meet the polishing of 2 column multiple groups
The scalability of the needs of element array, equipment is preferable.
Detailed description of the invention
Fig. 1 is the top view of based CMP apparatus of the present invention (2 × 3 array)；
Fig. 2 is the three-dimensional effect diagram of based CMP apparatus shown in Fig. 1；
Fig. 3 is the structural schematic diagram of a polishing unit；
Fig. 4 is the structural schematic diagram of wafer transfer unit of the invention；
Fig. 5 is the three-dimensional effect diagram of an embodiment with twin crystal circle transmission unit；
Fig. 6 is the three-dimensional effect diagram of an embodiment with removable platform.
Specific embodiment
The invention will now be described in further detail with reference to the accompanying drawings.
Based CMP apparatus according to the present invention, including multiple polishing units and multiple cleaning units.The throwing
Light unit includes workbench, polishing disk, rubbing head, polishing arm, trimmer, polishing fluid arm, platform etc..The polishing disk, throwing
Shaven head, polishing arm, trimmer, polishing fluid arm are arranged on the table according to technique Working position.The polishing arm can carry
Rubbing head moves between polishing disk and platform.The trimmer is on polishing disk with certain pressure reconditioning polishing disk.Institute
Chemical liquid required for polishing can be provided by stating polishing fluid arm.When needing to load or unloading wafer, the polishing of unit is polished
Door is opened, and polishing arm carries rubbing head and rotates to platform position.Load and unload wafer after, polishing arm carry rubbing head rotate to
Polishing disk position carries out polishing.At this moment polishing door closure, prevents polishing area liquid and steam from leaking.In polishing processing
In, polishing fluid arm flows out polishing fluid, and trimmer carries out recondition to polishing disk.The polishing disk is rotated with certain speed,
The rubbing head is simultaneously with certain speed rotation.
Cleaning unit is connected with the polishing cell array.Affiliated cleaning unit lines up two column or multiple row, constitutes polishing
Add cleaning assembled unit.In polishing cell array and cleaning unit joining place equipped with platform is reprinted, the wafer of disengaging polishing unit is all
It is temporary by reprinting platform.
Manipulator is housed among the cleaning unit, wafer will can be transmitted between polishing unit and cleaning unit.
It will be by reprinting platform when wafer transfer.
In addition, based CMP apparatus of the invention generally goes back integrated equipment front end unit module (EFEM).Cleaning
Unit generally comprises mega sonic wave cleaning, round brush scrub, drying wafer etc..
In the present invention, polishing module is the polishing cell array that two column multiple groups polish unit composition, and the polishing of two column multiple groups is single
All platforms of member polish the column direction longitudinal arrangement of units in two column, but according to the actual needs, polish cell array
It can extend to 2 column multiple groups.To implement the present invention, reality below convenient for introducing the principle of the present invention and those skilled in the art
It applies example and illustrates the layout expansion for being all based on 3 groups of 2 column, illustrate hereby.
Fig. 1,2 shown respectively one (2 × 3 array) based CMP apparatus top view and perspective view, chemistry
CMP apparatus includes: polishing cell array 100, cleaning unit combination 200 and wafer transfer unit 120.The polishing
Cell array 100 is composed of 2 column, 3 row polishing unit 110.
Each group of polishing unit 110 includes, as shown in figure 3, workbench 115, polishing disk 117, rubbing head 112, polishing arm
111, trimmer 114, polishing fluid arm 113, platform 116, polishing door 119 etc..
The setting polishing door 119 between polishing unit 110 and platform 116, when needing to load or unloading wafer, polishing
The polishing door 119 of unit 110 is opened, and polishing arm 111 carries the rotation of rubbing head 112 to 116 position of platform.Handling wafer terminates
Afterwards, polishing arm 111 carries the rotation of rubbing head 112 to 117 position of polishing disk and carries out polishing.At this moment polishing door 119 is closed, and is prevented
Only polishing area liquid and steam leak.The wafer chemically-mechanicapolish polished, by reprinting platform 118 or other play similar crystalline substance
The region of circle interim loading place effect enters polishing cell array 100, the wafer after chemically mechanical polishing by reprint platform 118 from
Open polishing cell array 100.Transmission and wafer of the wafer between reprinting platform 118 and each platform 116 are in each handling
Transmission between platform 116 is completed by wafer transfer unit 120.
As shown in figure 3, polishing disk 117, rubbing head 112, polishing arm 111, trimmer 114, polishing fluid arm 113 are arranged in work
Make on platform 115.Polishing disk 117 is connect by bearing arrangement with workbench 115, and polishing disk 117 can be with continuous rotation.The polishing
Arm 111 can carry rubbing head 112 and move between polishing disk 117 and platform 116.Polishing arm 111 is taken during the polishing process
Band rubbing head 112 is slightly swung in the range of polishing disk 117.Radius of the trimmer 114 in polishing disk 117 during the polishing process
It is moved back and forth in range, the restoring on line to polishing disk 117 is realized by the revolving wheel on 114 head of trimmer.Polished
Polishing fluid arm 113 can supply polishing fluid on polishing disk 117 in journey.After polishing wafer, polishing arm 113 carries rubbing head
112 rotations to the position of platform 116 carries out unloading wafer, and another wafer of reloading again after wafer unloading carries out next
A polishing cycle.
It is illustrated in figure 4 the schematic diagram of the wafer transfer unit 120 as the core component of wafer transfer module, comprising:
The guiding device 121 moved in the horizontal direction, horizontal movement driving device 122, vertical movement mechanism 123, wafer chuck 124,
Wafer claw 125 etc..This part is the work department of wafer transfer module, passes through the interconnecting piece of wafer transfer module (in figure not
Show) it is connect with based CMP apparatus.
In the initial state, vertical movement mechanism 123 is in a high position, allows wafer chuck 124 along horizontal direction
Freely walk.When guiding device 121 runs to the top for reprinting platform 118 or platform 116, under vertical movement mechanism 123
Low level is dropped to, being equipped on wafer chuck 124 can be with the wafer claw 125 of opening and closing.Wafer claw 125 is moving vertically
After the low level of mechanism 123 picks and places wafer, vertical movement mechanism 123 rises to a high position, and horizontal movement driving device 122 is run
To the top of next reprinting platform 118 or platform 116, vertical movement mechanism 123 drops to low level, on wafer chuck 124
Wafer claw 125 carry out pick-and-place wafer operation.It and so on moves, wafer is allowed to reprint platform 118 and each handling
Transmitting is realized between platform 116.In order to improve the efficiency of transmission of wafer, as shown in figure 4, the wafer card in wafer transfer unit 120
Disk 124 is designed to overturning structure, arranges two sets of 125 mechanisms of wafer claw on the two sides of wafer chuck 124.Example can have at this time
Effect reduces the track route of wafer transfer unit 120, increases the transmittability of wafer transfer unit 120.Because above platform
Wafer transfer unit wafer can be transferred to another platform from a platform, or wafer is taken from polishing unit
Into or take out because wafer transfer unit is arranged in the top of the platform, rubbing head is loaded in platform
Or unloading wafer when, wafer transfer unit can pass through at any time polishing unit without being interfered, constitute it is of the invention most
One of major advantage.
As shown in Figure 1, the wafer after chemically mechanical polishing, is placed on by wafer transfer unit 120 and reprints on platform 118,
Wafer is transferred to the cleaning after cleaning unit 200 is polished from reprinting platform 118 by the manipulator of cleaning unit 200 and is done
Dry processing.The arrangement of cleaning unit 200 left and right two, as needed, cleaning manipulator, which can choose, puts wafer to any
A cleaning unit 200.
As another embodiment of the present invention, wafer transfer unit 120 can be designed to two sets or two sets or more, on edge
Cascade is formed on the column direction of two column polishing units, to meet the production capacity needs of 2 column multiple groups polishing cell array 100.
As shown in figure 5, the transmission of wafer is by transmission unit 120a and transmission unit 120b cooperative achievement.Transmission unit 120a
It is responsible for transmission of the wafer between reprinting platform 118, platform 116f, platform 116e, platform 116d, transmission unit 120b is negative
Duty wafer transmits between platform 116d, platform 116c, platform 116b, platform 116a.Transmission unit 120a and biography
Defeated unit 120b can reach the position of platform 116d in different times, to realize wafer in entirely polishing cell array
Circulation in 100.
As another embodiment, as shown in fig. 6, one (2 × 3 array) based CMP apparatus is arranged 3
Moveable platform, respectively platform 116a, platform 116b, platform 116c.Platform 116a is responsible for polishing unit
110a and polishing unit 110b；Platform 116b is responsible for polishing unit 110c and polishes unit 110d；Platform 116c is responsible for throwing
Light unit 110e and polishing unit 110f.
Above-mentioned most latter two embodiment has embodied a concentrated reflection of flexibility and the wafer of wafer transfer unit configuration of the invention
The flexibility with clock synchronization of transmission unit and the platform serviced, belongs to one of remarkable advantage of the invention.
Two column are lined up using polishing unit in the present invention or multiple row, wafer transfer unit layout placed in the middle help to reduce and passes
Defeated stroke, based CMP apparatus processing efficiency are substantially improved on year-on-year basis, and by using modular layout, equipment
Integral layout it is more flexible, adaptability is also stronger.
The description of the above specific embodiment is not intended to limit the invention, all within the spirits and principles of the present invention institute
Any modification, equivalent substitution, improvement and etc. of work, should all be included in the protection scope of the present invention.
Claims (13)
1. a kind of based CMP apparatus, including polishing module, cleaning unit and wafer transfer module, cleaning unit is to throwing
Wafer after light is cleaned, which is characterized in that the polishing module includes that two column polish cell array, and each column polishes unit packet
Unit is polished containing two or more sets, the corresponding platform of two column polishing cell arrays is on the column direction for being located at polishing cell array
Longitudinal arrangement, the working position of the wafer transfer module complete wafer and exist in the vertical direction for the platform being arranged in the vertical direction
Transmission between other loading places and the platform and the platform.
2. based CMP apparatus according to claim 1, it is characterised in that other described loading places are to reprint platform,
The wafer of disengaging polishing unit is temporary by reprinting platform.
3. based CMP apparatus according to claim 1, which is characterized in that the cleaning unit lines up two column,
Corresponding two column polishing cell array.
4. based CMP apparatus according to claim 1, it is characterised in that the wafer transfer module includes one
Group or multiple groups wafer transfer unit, every group of wafer transfer unit include the guiding device (121) moved in the horizontal direction, horizontal fortune
Dynamic driving device (122), vertical movement mechanism (123), wafer chuck (124) and wafer claw (125), horizontal movement driving dress
Setting (122) can slide along guiding device (121), and vertical movement mechanism (123) can be in a high position and work under two modes of low level
Make, wafer claw (125) is installed on wafer chuck (124), can do opening and closing operation.
5. based CMP apparatus according to claim 4, it is characterised in that in the multiple groups wafer transfer unit
Every group of wafer transfer unit along two column polishing units column direction along formed cascade, complete wafer other loading places with it is each
Transmission between platform and each platform.
6. based CMP apparatus according to claim 5, it is characterised in that the multiple groups wafer transfer unit is mutual
It mutually cooperates, realizes circulation of the wafer in entirely polishing cell array.
7. based CMP apparatus according to claim 4, it is characterised in that the wafer chuck is overturning structure,
Two sets of wafer click-on mechanisms are arranged on its two sides.
8. based CMP apparatus according to claim 1, it is characterised in that equipped with machinery in the cleaning unit
Hand transmits wafer between polishing unit and cleaning unit.
9. based CMP apparatus according to claim 1, it is characterised in that the platform can be in polishing unit
It is vertically moved on the column direction of array, a platform can correspond to more than one polishing unit.
10. based CMP apparatus according to claim 1, it is characterised in that the based CMP apparatus
It can integrate front equipment end unit module.
11. based CMP apparatus according to claim 1, it is characterised in that the cleaning unit includes mega sonic wave
Cleaning or round brush scrub and drying wafer function.
12. based CMP apparatus according to claim 1, it is characterised in that in the polishing unit and platform
Between setting can open the polishing door of closure.
13. a kind of method for carrying out wafer transfer using based CMP apparatus described in claim 1, feature exist
In comprising the steps of:
S1: in the initial state, vertical movement mechanism (123) is in a high position, so that wafer chuck (124) can be along level side
To free walking；
S2: when guiding device (121) runs to the top for reprinting platform or platform (116), under vertical movement mechanism (123)
Low level is dropped to, wafer claw (125) the crawl wafer installed on wafer chuck (124)；
S3: subsequent vertical movement mechanism (123) rises to a high position, and horizontal movement driving device (122) runs to next reprinting
The top of platform (118) or platform (116)；
S4: vertical movement mechanism (123) drops to low level, and the wafer claw (125) on wafer chuck (124) carries out release wafer
Operation；
S5: repeating above step, and wafer is allowed to reprint realization transmitting between platform (118) and each platform (116).
Priority Applications (8)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811043848.7A CN109015314A (en) | 2018-09-07 | 2018-09-07 | A kind of based CMP apparatus |
| PCT/CN2018/110052 WO2020047942A1 (en) | 2018-09-07 | 2018-10-12 | Chemical mechanical planarization apparatus |
| TW107141745A TWI806931B (en) | 2018-09-07 | 2018-11-22 | chemical mechanical grinding equipment |
| CN201910481448.2A CN110026879A (en) | 2018-09-07 | 2019-06-04 | A kind of based CMP apparatus and wafer transfer method |
| PCT/CN2019/101581 WO2020048311A1 (en) | 2018-09-07 | 2019-08-20 | Chemical-mechanical planarization device, wafer transfer method and wafer planarization unit |
| SG11202103477TA SG11202103477TA (en) | 2018-09-07 | 2019-08-20 | Chemical-mechanical planarization device, wafer transfer method and wafer planarization unit |
| US17/274,183 US20210260716A1 (en) | 2018-09-07 | 2019-08-20 | Chemical mechanical planarization equipment, wafer transfer method, and wafer planarization unit |
| KR1020217010344A KR102533567B1 (en) | 2018-09-07 | 2019-08-20 | Chemical and mechanical planarization equipment and wafer transfer method, wafer planarization unit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811043848.7A CN109015314A (en) | 2018-09-07 | 2018-09-07 | A kind of based CMP apparatus |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN109015314A true CN109015314A (en) | 2018-12-18 |
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ID=64624503
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201811043848.7A Pending CN109015314A (en) | 2018-09-07 | 2018-09-07 | A kind of based CMP apparatus |
| CN201910481448.2A Pending CN110026879A (en) | 2018-09-07 | 2019-06-04 | A kind of based CMP apparatus and wafer transfer method |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910481448.2A Pending CN110026879A (en) | 2018-09-07 | 2019-06-04 | A kind of based CMP apparatus and wafer transfer method |
Country Status (3)
| Country | Link |
|---|---|
| CN (2) | CN109015314A (en) |
| TW (1) | TWI806931B (en) |
| WO (1) | WO2020047942A1 (en) |
Cited By (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109732474A (en) * | 2019-01-30 | 2019-05-10 | 杭州众硅电子科技有限公司 | A kind of chemical-mechanical polisher and its wafer exchange mechanism and wafer transfer method |
| CN110039441A (en) * | 2019-01-14 | 2019-07-23 | 杭州众硅电子科技有限公司 | A kind of based CMP apparatus |
| CN110103119A (en) * | 2018-09-20 | 2019-08-09 | 杭州众硅电子科技有限公司 | A kind of polishing handling parts module |
| CN110153874A (en) * | 2019-06-25 | 2019-08-23 | 吉姆西半导体科技（无锡）有限公司 | Wafer planarization equipment wafer transfer approach |
| WO2020048311A1 (en) * | 2018-09-07 | 2020-03-12 | 杭州众硅电子科技有限公司 | Chemical-mechanical planarization device, wafer transfer method and wafer planarization unit |
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| CN111524833A (en) * | 2020-04-28 | 2020-08-11 | 华海清科股份有限公司 | Chemical mechanical polishing system and chemical mechanical polishing method |
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Also Published As
| Publication number | Publication date |
|---|---|
| TWI806931B (en) | 2023-07-01 |
| TW202011474A (en) | 2020-03-16 |
| CN110026879A (en) | 2019-07-19 |
| WO2020047942A1 (en) | 2020-03-12 |
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