CN115132623A - Wafer grinding and polishing device and transmission method - Google Patents

Wafer grinding and polishing device and transmission method Download PDF

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Publication number
CN115132623A
CN115132623A CN202210698674.8A CN202210698674A CN115132623A CN 115132623 A CN115132623 A CN 115132623A CN 202210698674 A CN202210698674 A CN 202210698674A CN 115132623 A CN115132623 A CN 115132623A
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China
Prior art keywords
polishing
wafer
area
cleaning
grinding
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CN202210698674.8A
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Chinese (zh)
Inventor
刘福强
尹影
李婷
史霄
李伟
舒福璋
周博伦
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Beijing Semicore Microelectronics Equipment Co Ltd
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Beijing Semicore Microelectronics Equipment Co Ltd
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Priority to CN202210698674.8A priority Critical patent/CN115132623A/en
Publication of CN115132623A publication Critical patent/CN115132623A/en
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67092—Apparatus for mechanical treatment
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B27/00—Other grinding machines or devices
    • B24B27/0023—Other grinding machines or devices grinding machines with a plurality of working posts
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B41/00—Component parts such as frames, beds, carriages, headstocks
    • B24B41/005—Feeding or manipulating devices specially adapted to grinding machines
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02057—Cleaning during device manufacture
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02041—Cleaning
    • H01L21/02096—Cleaning only mechanical cleaning
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/0405, H01L21/0445, H01L21/06, H01L21/16 and H01L21/18 with or without impurities, e.g. doping materials
    • H01L21/46—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428
    • H01L21/461—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/428 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/463—Mechanical treatment, e.g. grinding, ultrasonic treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/67034—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for drying
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67046—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly scrubbing means, e.g. brushes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67161—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
    • H01L21/67219—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process comprising at least one polishing chamber
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67703—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
    • H01L21/67706—Mechanical details, e.g. roller, belt
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H01L21/67742—Mechanical parts of transfer devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Robotics (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)

Abstract

The invention provides a wafer grinding and polishing device and a transmission method, belonging to the technical field of wafer manufacturing, wherein the wafer grinding and polishing device comprises: the polishing area, the cleaning area and the storage area are arranged in sequence; the polishing zone is provided with a first polishing zone and a second polishing zone which are symmetrically arranged; the cleaning area is provided with a first cleaning area and a second cleaning area which are symmetrically arranged; according to the wafer grinding and polishing device, the polishing area and the cleaning area are symmetrically arranged, and parts have 100% replaceability, so that the wafer grinding and polishing device can work on one side and can work on both sides, and the stability and reliability of equipment are greatly improved; furthermore, the polishing and grinding device is reasonable in structure and convenient to transmit, the circulation efficiency of the wafer is improved, the productivity of the polishing and grinding device is improved, and the yield of the wafer product is further improved.

Description

Wafer grinding and polishing device and transmission method
Technical Field
The invention relates to the technical field of wafer manufacturing, in particular to a wafer grinding and polishing device and a transmission method.
Background
Chemical mechanical planarization techniques are techniques that combine chemical and mechanical action. The working principle is that firstly, the surface material of the workpiece and the oxidant in the polishing solution are subjected to chemical reaction to generate a soft layer which is relatively easy to remove, then the soft layer is removed under the mechanical action of the abrasive in the polishing solution and the polishing pad to expose the surface of the workpiece again, and then the chemical reaction is carried out, so that the grinding and polishing process of the surface of the workpiece is completed under the combined action of the chemical action process and the mechanical action process.
The grinding and polishing process is carried out in the grinding and polishing device, but because the polishing station and the cleaning station are limited in position and circulation mode in the grinding and polishing device, the productivity of the grinding and polishing device is reduced, and the yield of wafer products is reduced.
Disclosure of Invention
Therefore, the technical problem to be solved by the present invention is to overcome the limitations of the arrangement positions and the circulation modes of the polishing station and the cleaning station in the polishing device in the prior art, and to reduce the productivity of the polishing device, which further results in the reduction of the yield of the wafer product, thereby providing a wafer polishing device.
The invention also provides a transmission method for the wafer grinding and polishing device.
In order to solve the technical problem, the invention provides a wafer grinding and polishing device, which comprises a polishing area, a cleaning area and a storage area which are arranged in sequence;
the polishing zone is provided with a first polishing zone and a second polishing zone which are symmetrically arranged; the first polishing area and the second polishing area are respectively provided with at least one group of polishing workbench groups, at least one group of rotating workbench groups and at least one group of slide glass workbench groups; a polishing manipulator is arranged between the first polishing area and the second polishing area;
the polishing worktable set is provided with grinding pads with different specifications;
the cleaning area is provided with a first cleaning area and a second cleaning area which are symmetrically arranged; the first cleaning area and the second cleaning area are respectively provided with a brushing part and a drying part; a cleaning manipulator is arranged between the first cleaning area and the second cleaning area;
one end of the storage area, which is close to the cleaning area, is provided with a storage manipulator;
a first transfer mechanism is arranged between the polishing area and the cleaning area; and a second transfer mechanism is arranged between the cleaning area and the storage area.
Preferably, the polishing worktable set is provided with a first polishing worktable and a second polishing worktable; the rotary worktable group is provided with a first rotary worktable and a second rotary worktable; the slide glass table group is provided with a first slide glass table, a second slide glass table and a third slide glass table.
Preferably, the first transfer mechanism has at least one set of bearing parts; the bearing part is provided with a first bearing table and a second bearing table which are distributed from top to bottom; the first bearing table is suitable for placing dry wafers; the second layer is adapted to receive a wet wafer.
As a preferred scheme, the edge of the second bearing table is provided with a blocking edge; and the second bearing table is provided with a liquid leakage hole which is communicated with the liquid collecting container.
As a preferred scheme, monitoring sensors are arranged on the first bearing table and the second bearing table; the monitoring sensor is used for monitoring the placement position of the wafer;
the second plummer is provided with at least two sets of mechanisms that spray of moisturizing, the mechanism that sprays of moisturizing is suitable for setting up above and below the wafer.
Preferably, the cleaning robot includes:
a base;
the first arm is rotatably arranged on the base;
the second arm is arranged at the upper end of the first arm; the second arm is arranged on the base in a lifting manner.
Preferably, the second arm and the base are arranged in a telescopic manner.
As a preferable scheme, two groups of polishing mechanical arms are arranged between the first polishing area and the second polishing area; two groups of cleaning mechanical arms are arranged between the first cleaning area and the second cleaning area.
The invention also provides a transmission method for grinding and polishing the wafer, which adopts any one of the above devices, and comprises the following steps:
s1, moving the wafer to be polished from the storage area to a second transfer mechanism through the storage manipulator;
s2, moving the wafer to be polished from the second transfer mechanism to the first transfer mechanism through the cleaning manipulator;
s3, putting the wafer to be polished into a polishing area through a polishing manipulator, and polishing the wafer to be polished by the polishing area;
s4, putting the polished wafer on a first transfer mechanism through a polishing manipulator; putting the wafer into a cleaning area through a cleaning manipulator, and cleaning the polished wafer;
s5, putting the cleaned wafer on a second transfer mechanism through the cleaning manipulator;
and S6, placing the wafer into the storage area through the storage mechanical arm.
As a preferred embodiment, it is possible to,
in step S2, the second arm of the cleaning robot moves the wafer to be polished from the second loading platform of the second transfer mechanism to the first loading platform of the first transfer mechanism;
in step S3, the specific moving process in the polishing area is as follows: the polishing device comprises a first wafer carrying table, a first rotating workbench, a first polishing workbench, a second wafer carrying table, a second rotating workbench, a second polishing workbench and a third wafer carrying table;
in step S4, the polishing robot transfers the polished wafer onto the second carrier platform of the first transfer mechanism;
a first arm of the cleaning manipulator carries the wafer to move in a cleaning area after turning 180 degrees; the specific moving process comprises the following steps: a first brushing part, a second brushing part and a drying part.
The technical scheme of the invention has the following advantages:
1. the polishing device comprises a polishing area, a cleaning area and a storage area which are arranged in sequence; after polishing and grinding are carried out on the wafer in the polishing area, the wafer enters the cleaning area through the polishing manipulator and the first transfer mechanism, and after the cleaning area is dried, the wafer enters the storage area through the cleaning manipulator and the second transfer mechanism;
the polishing area is provided with a first polishing area and a second polishing area which are symmetrically arranged; the cleaning area is provided with a first cleaning area and a second cleaning area which are symmetrically arranged, parts have 100% replaceability, and can work on one side or on both sides, so that the stability and reliability of the equipment are greatly improved; furthermore, the arrangement structure is reasonable, the transmission is convenient, the wafer circulation efficiency is improved, the productivity of the polishing and grinding device is improved, and the yield of wafer products is further improved;
by arranging the grinding pads with different specifications, the grinding of multiple specifications of the same wafer to be processed can be realized at one time, and the grinding efficiency is high.
2. The invention provides a wafer grinding and polishing device, wherein a bearing part is provided with a first bearing table and a second bearing table which are distributed from top to bottom; the first bearing table is used for placing dry wafers which are transmitted by the second transfer mechanism through the cleaning manipulator, and the lower layer is used for placing wet wafers which pass through the polishing area and then enter the cleaning area, so that the situation that components such as residual polishing solution and the like on the wafers to be cleaned after the wafers are polished in the polishing area pollute the unpolished wafers can be avoided.
3. According to the wafer grinding and polishing device provided by the invention, the second bearing table is provided with the blocking edge and the liquid leakage hole, so that liquid can be conveniently collected and discharged.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, and it is obvious that the drawings in the following description are some embodiments of the present invention, and other drawings can be obtained by those skilled in the art without creative efforts.
FIG. 1 is a schematic structural diagram of a wafer polishing apparatus according to the present invention.
Fig. 2 is a schematic structural diagram of a first intermediate rotation mechanism of the present invention.
Fig. 3 is a schematic structural view of the cleaning robot of the present invention.
Description of reference numerals:
1. a first polishing zone; 2. a second polishing zone; 3. a first cleaning zone; 4. a second cleaning area; 5. a storage area; 6. a polishing manipulator; 7. cleaning the manipulator; 8. storing the manipulator; 9. a first transfer mechanism; 10. a second transfer mechanism; 11. a first polishing table; 12. a second polishing table; 13. a first rotary table; 14. a second rotary table; 15. a first slide stage; 16. a second slide stage; 17. a third slide table; 18. a first brushing section; 19. a second brushing section; 20. a drying section; 21. a first carrier table; 22. a second carrier table; 23. blocking edges; 24. a weep hole; 25. a base; 26. a first arm; 27. a second arm; 28. a turning structure; 29. a lifting structure; 30. a telescopic structure; 31. moisturizing sprays mechanism.
Detailed Description
The technical solutions of the present invention will be described clearly and completely with reference to the accompanying drawings, and it is to be understood that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
In the description of the present invention, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc., indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, and are only for convenience of description and simplicity of description, but do not indicate or imply that the device or element being referred to must have a particular orientation, be constructed and operated in a particular orientation, and thus, should not be construed as limiting the present invention.
In the description of the present invention, it should be noted that, unless otherwise explicitly specified or limited, the terms "mounted," "connected," and "connected" are to be construed broadly, e.g., as meaning either a fixed connection, a removable connection, or an integral connection; can be mechanically or electrically connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meanings of the above terms in the present invention can be understood in specific cases to those skilled in the art.
In addition, the technical features involved in the different embodiments of the present invention described below may be combined with each other as long as they do not conflict with each other.
Example 1
The embodiment provides a wafer grinding and polishing device, as shown in fig. 1, comprising a polishing area, a cleaning area and a storage area 5 which are arranged in sequence;
the polishing area is provided with a first polishing area 1 and a second polishing area 2 which are symmetrically arranged; a first gap is formed between the first polishing area 1 and the second polishing area 2, and a polishing manipulator 6 is arranged in the first gap; the cleaning area is provided with a first cleaning area 3 and a second cleaning area 4 which are symmetrically arranged; a second gap is formed between the first cleaning area 3 and the second cleaning area 4, and a cleaning manipulator 7 is arranged in the second gap; a third gap is arranged between the cleaning area and the storage area 5, and a storage manipulator 8 is arranged in the third gap;
in summary, in the overall layout process, the first polishing area 1 and the first cleaning area 3 are disposed close to and side by side, and the second polishing area 2 and the second cleaning area 4 are disposed close to and side by side; the first polishing area 1, the first cleaning area 3, the second polishing area 2 and the second cleaning area 4 are symmetrically arranged; in the mode, the first area and the second area which are separated from the polishing area and the cleaning area are symmetrically distributed, are independent from each other and do not interfere with each other, can work independently and cooperatively, have high compatibility and can be replaced.
The first polishing area 1 and the second polishing area 2 are respectively provided with at least one group of polishing worktable groups, at least one group of rotating worktable groups and at least one group of slide glass worktable groups; the polishing worktable set is provided with grinding pads with different specifications; by arranging the grinding pads with different specifications, the grinding of multiple specifications of the same wafer can be realized at one time, and the grinding efficiency is improved.
The first cleaning area 3 and the second cleaning area 4 are provided with a brushing part and a drying part 20;
a first transfer mechanism 9 is arranged between the first gap and the second gap, and a second transfer mechanism 10 is arranged between the second gap and the third gap; the transfer mechanism is used for temporarily storing the wafer.
After polishing and grinding are carried out on the wafer in the polishing area, the wafer enters the cleaning area through the polishing manipulator 6 and the first transfer mechanism 9, and after the cleaning area is dried, the wafer enters the storage area 5 through the cleaning manipulator 7 and the second transfer mechanism 10; the polishing and grinding device is reasonable in structure and convenient to transmit, the circulation efficiency of the wafer is improved, the productivity of the polishing and grinding device is improved, and the yield of the wafer product is further improved.
The polishing worktable group is provided with two polishing worktables; the rotary worktable group is provided with two rotary worktables; the slide stage group has three slide stages. In the scheme, each polishing area is provided with a group of polishing workbench groups and a group of rotating workbench groups and a group of slide glass workbench groups.
Within each wash zone are a first brush section 18, a second brush section 19 and a dryer section 20.
As shown in fig. 2, the first transferring mechanism 9 has at least one set of supporting parts, the supporting parts have a first supporting platform 21 and a second supporting platform 22 distributed from top to bottom, the first supporting platform 21 is suitable for placing dry wafers, that is, the dry wafers are transferred from the second transferring mechanism 10 through the cleaning robot 7, and wet wafers are placed on the lower layer, that is, wafers to be sent into the cleaning zone after passing through the polishing zone; this arrangement can prevent components such as polishing liquid remaining on the wafer to be cleaned after polishing in the polishing zone from contaminating the unpolished wafer.
A blocking edge 23 is arranged at the edge of the second bearing table 22, and a plurality of liquid leakage holes 24 are formed in the second bearing table 22; the collection and drainage of liquid is facilitated by the provision of the retaining rim 23 and the weep hole 24. The first bearing table 21 and the second bearing table 22 are both provided with monitoring sensors, and the monitoring sensors are used for monitoring whether wafers exist or not and whether the wafers are placed in place or not.
Further, the polished wafer needs to be moisturized, otherwise, the adhered matters on the wafer are dried on the wafer and are not easy to clean and must be moisturized, so that at least two groups of spraying moisturizing mechanisms are arranged on the second bearing platform 22 of the first transfer mechanism 9. In the drawings, the moisturizing spray mechanisms 31 on the lower surface of the wafer can be shown in fig. 2, and the moisturizing spray mechanisms 31 on the upper surface are not shown in the drawings.
The second relay mechanism 10 has the same structure as the first relay mechanism 9.
As shown in fig. 3, the cleaning robot 7 includes: a base 25, a first arm 26 and a second arm 27; the first arm 26 is arranged on the base 25 through a turnover structure 28, and the turnover structure 28 can be a motor; the second arm 27 is arranged on the base 25 through the lifting structure 29, so that the height of the second arm 27 can be adjusted; the lifting structure 29 can be a driving cylinder or a gear and a rack which are connected in a meshing way; the driving end of the lifting structure 29 is connected to the second arm 27 through a telescopic structure 30, and the second arm 27 can be moved in a telescopic manner in the horizontal direction by the arrangement of the telescopic structure 30.
180 degrees of the first arm 26 can be realized through the rotary arrangement of the first arm 26, the lower arm of the first arm 26 is responsible for turning the wafer to be cleaned after the first transfer mechanism 9 is polished for 180 degrees and then placing the wafer into a brushing part of a cleaning area, then placing the wafer into a drying part 20 from the brushing part, finally taking the wafer out of the drying part 20 and placing the wafer on the upper layer of the second transfer mechanism 10, and the wafer is placed into the storage area 5 by the storage manipulator 8; the second arm 27 is responsible for transferring the wafer from the source storage area 5 on the second transfer mechanism 10 to the first stage 21 of the first transfer mechanism 9.
Example 2
The embodiment provides a transmission method for wafer grinding and polishing, which is applied to the wafer grinding and polishing device in embodiment 1;
taking a wafer to be polished which needs a single polishing and is suitable for the first polishing area 1 and the first cleaning area 3 as an example, the method specifically comprises the following steps:
initially, a wafer to be polished is placed in the storage area 5;
the storage robot 8 moves the wafer to be polished from the storage area 5 to the second transfer mechanism 10, specifically, to the second carrier table 22 of the second transfer mechanism 10;
the second arm 27 of the cleaning robot 7 moves the wafer to be polished from the second loading table 22 of the second relay mechanism 10 onto the first loading table 21 of the first relay mechanism 9;
the polishing manipulator 6 moves the wafer to be polished in the polishing area; the specific moving process comprises the following steps: a first slide table 15, a first rotary table 13, a first polishing table 11, a second slide table 16, a second rotary table 14, a second polishing table 12, and a third slide table 17;
the polishing manipulator 6 transfers the polished wafer to a second bearing platform of the first transfer mechanism 9;
the first arm 26 of the cleaning manipulator 7 carries the wafer to turn 180 degrees and then moves in the cleaning area; the specific moving process comprises the following steps: a first brushing unit 18, a second brushing unit 19, and a drying unit 20;
the first arm 26 of the cleaning robot 7 moves the wafer onto the first stage 21 of the second transfer mechanism 10;
the stocker robot 8 moves the wafer to the stocker 5.
Some wafers need to be polished more than twice, and a first polishing area 1, a first cleaning area 3, a second polishing area 2 and a second cleaning area 4 need to be used, and the method specifically comprises the following steps:
initially, a wafer to be polished is placed in the storage area 5;
the storage robot 8 moves the wafer to be polished from the storage area 5 to the second transfer mechanism 10, specifically, to the second loading table 22 of the second transfer mechanism 10;
the second arm 27 of the cleaning robot 7 moves the wafer to be polished from the second loading table 22 of the second relay mechanism 10 onto the first loading table 21 of the first relay mechanism 9;
the first polishing manipulator 6 moves the wafer to be polished in the first polishing zone 1; the specific moving flow in the first polishing zone 1 is as follows: a first slide table 15, a first rotary table 13, a first polishing table 11, a second slide table 16, a second rotary table 14, a second polishing table 12, and a third slide table 17;
the first polishing mechanical arm 6 moves the wafer from the first polishing area 1 to the second polishing area 2; the specific moving flow in the second polishing zone 2 is as follows: a first slide table 15, a first rotary table 13, a first polishing table 11, a second slide table 16, a second rotary table 14, a second polishing table 12, and a third slide table 17;
the polishing manipulator 6 transfers the polished wafer to a second bearing platform of the first transfer mechanism 9;
the first arm 26 of the cleaning manipulator 7 carries the wafer to turn 180 degrees, and then moves in the cleaning area; the specific moving process comprises the following steps: a first brushing unit 18, a second brushing unit 19, and a drying unit 20;
the first arm 26 of the cleaning robot 7 moves the wafer onto the first stage 21 of the second transfer mechanism 10;
the stocker robot 8 moves the wafer to the stocker 5.
It should be understood that the above examples are only for clarity of illustration and are not intended to limit the embodiments. Other variations and modifications will be apparent to persons skilled in the art in light of the above description. And are neither required nor exhaustive of all embodiments. And obvious variations or modifications therefrom are within the scope of the invention.

Claims (10)

1. A wafer grinding and polishing device is characterized by comprising a polishing area, a cleaning area and a storage area (5) which are arranged in sequence;
the polishing area is provided with a first polishing area (1) and a second polishing area (2) which are symmetrically arranged; the first polishing area (1) and the second polishing area (2) are internally provided with at least one group of polishing workbench groups, at least one group of rotating workbench groups and at least one group of slide glass workbench groups; a polishing manipulator (6) is arranged between the first polishing area (1) and the second polishing area (2);
the polishing worktable set is provided with grinding pads with different specifications;
the cleaning area is provided with a first cleaning area (3) and a second cleaning area (4) which are symmetrically arranged; the first washing zone (3) and the second washing zone (4) each having a brushing part and a drying part (20); a cleaning manipulator (7) is arranged between the first cleaning area (3) and the second cleaning area (4);
one end of the storage area (5) close to the cleaning area is provided with a storage manipulator (8);
a first transfer mechanism (9) is arranged between the polishing area and the cleaning area; a second transfer mechanism (10) is arranged between the cleaning area and the storage area (5).
2. The wafer grinding and polishing apparatus according to claim 1, wherein the polishing table group has a first polishing table (11) and a second polishing table (12); the rotary table group is provided with a first rotary table (13) and a second rotary table (14); the slide glass table group is provided with a first slide glass table (15), a second slide glass table (16) and a third slide glass table (17).
3. The wafer grinding and polishing device according to claim 1, characterized in that the first rotation mechanism (9) has at least one set of bearing parts; the bearing part is provided with a first bearing table (21) and a second bearing table (22) which are distributed from top to bottom; the first bearing table (21) is suitable for placing dry wafers; the second bearing table is suitable for placing wet wafers.
4. The wafer grinding and polishing device as claimed in claim 3, characterized in that the edge of the second bearing table (22) is provided with a blocking edge (23); and the second bearing table (22) is provided with a liquid leakage hole (24), and the liquid leakage hole (24) is communicated with a liquid collecting container.
5. The wafer grinding and polishing device according to claim 3, characterized in that the first bearing table (21) and the second bearing table (22) are provided with monitoring sensors; the monitoring sensor is used for monitoring the placement position of the wafer;
the second bearing table (22) is provided with at least two groups of moisturizing spraying mechanisms (31), and the moisturizing spraying mechanisms (31) are suitable for being arranged above and below the wafer.
6. The wafer grinding and polishing device according to claim 1, wherein the cleaning robot (7) comprises:
a base (25);
a first arm (26) rotatably disposed on the base (25);
a second arm (27) disposed at an upper end of the first arm (26); the second arm (27) is arranged on the base (25) in a lifting manner.
7. The wafer grinding and polishing device as claimed in claim 6, characterized in that the second arm (27) is telescopically arranged with the base (25).
8. The wafer grinding and polishing device according to claim 1, characterized in that two sets of polishing robots (6) are arranged between the first polishing zone (1) and the second polishing zone (2); two groups of cleaning mechanical arms (7) are arranged between the first cleaning area (3) and the second cleaning area (4).
9. A method for transferring a wafer grinding and polishing, characterized in that the wafer grinding and polishing device according to any one of claims 1 to 8 is used, comprising the steps of:
s1, moving the wafer to be polished from the storage area (5) to the second transfer mechanism (10) through the storage mechanical arm (8);
s2, moving the wafer to be polished from the second transfer mechanism (10) to the first transfer mechanism (9) through the cleaning manipulator (7);
s3, putting the wafer to be polished into a polishing area through the polishing mechanical arm (6), and polishing the wafer to be polished in the polishing area;
s4, placing the polished wafer on a first transfer mechanism (9) through a polishing mechanical hand (6); the wafer is placed in a cleaning area through a cleaning manipulator (7) to clean the polished wafer;
s5, putting the cleaned wafer on a second transfer mechanism (10) through a cleaning manipulator (7);
s6, the wafer is placed into the storage area (5) by the storage robot (8).
10. The method for transferring wafer polishing and grinding as claimed in claim 9,
in step S2, the second arm (27) of the cleaning robot (7) moves the wafer to be polished from the second stage (22) of the second relay mechanism (10) onto the first stage (21) of the first relay mechanism (9);
in step S3, the specific moving process in the polishing area is as follows: a first slide holder (15), a first rotary table (13), a first polishing table (11), a second slide holder (16), a second rotary table (14), a second polishing table (12) and a third slide holder (17);
in step S4, the polishing robot (6) transfers the polished wafer to the second carrier platform of the first transfer mechanism (9);
a first arm (26) of the cleaning manipulator (7) carries the wafer to move in the cleaning area after turning 180 degrees; the specific moving process comprises the following steps: a first brushing part (18), a second brushing part (19) and a drying part (20).
CN202210698674.8A 2022-06-20 2022-06-20 Wafer grinding and polishing device and transmission method Pending CN115132623A (en)

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