WO2024083063A1

WO2024083063A1 - Wafer polishing system

Info

Publication number: WO2024083063A1
Application number: PCT/CN2023/124672
Authority: WO
Inventors: 徐枭宇
Original assignee: 杭州众硅电子科技有限公司
Priority date: 2022-10-18
Filing date: 2023-10-16
Publication date: 2024-04-25
Also published as: CN115338718B; CN115338718A

Abstract

Disclosed in the present invention is a wafer polishing system, at least comprising two polishing units; a single polishing unit comprises at least two polishing modules and a first fixed working position, each polishing module comprising a polishing platform and a polishing head; the at least two polishing heads in the same polishing unit can transport a wafer to the first fixed working position; at least a second fixed working position is further provided between adjacent polishing units; and the at least two polishing heads of the adjacent polishing units can transport the wafer to the second fixed working position. In the present invention, coordination of the first fixed working position, the second fixed working position and the polishing heads achieves transportation of wafers between polishing areas in the polishing system, allowing for greater transportation flexibility; the second fixed working position and a third fixed working position are additionally provided, making the whole transfer process of the wafers more complete and rapid; and the cleanliness of the polishing heads is ensured without affecting wafer inflow and outflow, thus improving product yield.

Description

Wafer polishing system

Technical Field

The invention belongs to the technical field of semiconductor integrated circuit chip manufacturing, and in particular relates to a wafer polishing system.

Background technique

In the actual wafer processing process, it is found that the spatial arrangement of the polishing unit and modules such as cleaning and wafer transportation has a great impact on the overall polishing output of the chemical mechanical planarization equipment; and the transmission of wafers between the polishing unit and the outside and between the polishing units is usually achieved by loading and unloading platforms.

Regarding the spatial layout of the loading and unloading platform and the polishing unit, most of the platforms on the market adopt a square layout with three polishing units. The four polishing heads are fixed on the cross-rotating workbench, which means that a wafer has a one-to-one correspondence with a polishing head after entering the polishing area, and one loading and unloading platform needs to provide loading and unloading services for the three polishing units. The number of polishing heads and polishing tables cannot be adjusted, and the polishing time of each polishing head cannot be controlled separately. The timeliness is poor and the flexibility is low. The liquids on different polishing tables are easy to splash and cause cross-influence, affecting the polishing effect, and the process is complicated.

In response to the above problems, multiple polishing units are arranged in parallel on the market, each of which includes at least two polishing modules, which share a fixed working position, making the equipment space compact and the wafer transmission efficiency high. However, in some process situations, higher requirements are placed on the wafer transmission efficiency.

Summary of the invention

In order to overcome the shortcomings of the prior art, the present invention provides a flexible wafer transmission method. High, wafer polishing system with higher wafer transfer efficiency.

The technical solution adopted by the present invention to solve its technical problem is: a wafer polishing system, comprising at least two polishing units;

A single polishing unit includes at least two polishing modules and a first fixed working position, wherein the polishing module includes a polishing platform and a polishing head;

At least two polishing heads in the same polishing unit can transfer the wafer to the first fixed working position;

At least a second fixed working position is provided between adjacent polishing units;

At least two polishing heads of adjacent polishing units can transfer the wafer to the second fixed working position.

Furthermore, a third fixed working position is provided between adjacent polishing units.

Furthermore, active areas of the polishing heads of two polishing modules of adjacent polishing units have an overlapping portion, and the second fixed working position is located in the overlapping portion.

Furthermore, the axis of the second fixed working position is located at the overlapping part.

Furthermore, the second fixed workstation is a loading and unloading platform, or a combination of a loading and unloading platform and a cleaning component, or a cleaning workstation, or a robot.

Furthermore, the axis center of the second fixed working position and the axis center of the third fixed working position are both located at the intersection of the overlapping parts.

Furthermore, the second fixed work station and the third fixed work station are respectively a cleaning work station and a loading and unloading platform.

Furthermore, the polishing head movement trajectory is an arc or a circle, and the center movement trajectories of the polishing heads of the two polishing modules in the same polishing unit have one and only one intersection point. The intersection area of the center movement tracks of the polishing heads of the two polishing modules at the diagonally opposite corners is eye-shaped.

Furthermore, the axis center of the second fixed working position and the axis center of the third fixed working position are located at the intersection of the intersection area of the polishing head center motion trajectory.

Furthermore, the motion trajectory circle of the polishing head of the polishing unit at the end of the wafer polishing system is provided with at least one cleaning work station and one loading and unloading platform.

Furthermore, the intersection area of the central motion trajectories of the polishing heads of two polishing modules in the same polishing unit is eye-shaped, and the intersection area of the central motion trajectories of the polishing heads of two polishing modules at diagonally opposite corners of adjacent polishing units is eye-shaped.

Furthermore, the intersection area of the central motion trajectories of the polishing heads of two polishing modules in the same polishing unit is eye-shaped, and the central motion trajectories of the polishing heads of two polishing modules at diagonally opposite sides of adjacent polishing units have one and only one intersection point.

Furthermore, the motion trajectories of the polishing heads of two polishing modules in the same polishing unit have one and only one intersection point, and the motion trajectories of the polishing heads of two polishing modules at diagonally opposite corners of adjacent polishing units have one and only one intersection point.

Furthermore, the active area of the polishing head of at least one polishing module in the polishing unit passes through the axis of the first fixed working position and the second fixed working position.

Furthermore, at least two first fixed working positions are provided in a single polishing unit; two polishing heads corresponding to only one first fixed working position in adjacent polishing units are arranged close to each other, and a second fixed working position is arranged between the two.

Furthermore, the connection lines of the polishing modules in adjacent polishing units are arranged in parallel, and the second fixed working position is located between the diagonally opposite polishing modules of the adjacent polishing units.

Furthermore, the connecting lines of the polishing modules in adjacent polishing units are arranged to intersect, and the second The fixed working position is close to the intersection.

Furthermore, the polishing units are arranged along the direction of wafer transmission, and there are transmission gaps between adjacent polishing units.

Furthermore, there are multiple polishing units, and the polishing units are arranged along a straight line, or the polishing units are arranged along an oblique line, or the polishing units are arranged along a bending line.

Furthermore, each polishing unit is provided with two polishing modules.

The beneficial effects of the present invention are: 1) through the cooperation of the first fixed working position, the second fixed working position and the polishing head, the wafer can be transferred between the polishing areas in the polishing system, and the transfer flexibility is higher; 2) by adding a second fixed working position, the polishing heads of the polishing modules in the adjacent polishing units can take and place the wafers at the third fixed working position, so that the wafers are transferred between the polishing modules of the adjacent polishing units, and the wafers are circulated in the polishing area by means of polishing relay; 3) by adding a second fixed working position and a third fixed working position, the polishing head can be swung to the position directly above the loading and unloading platform for cleaning, and the wafers can be The entire circulation process is more complete and faster; 4) The second and third fixed workstations are added to ensure the cleanliness of the polishing head without affecting the wafer in and out, thereby improving the product yield; 5) The traditional working state of the wafer waiting for the polishing head is changed, the circulation speed of the polishing head is accelerated, and the wafer polishing efficiency is improved; 6) The transmission path can be freely expanded. The wafer transmission path can be a straight line, a curve, or a bending line. There are more possibilities for the arrangement of the polishing unit, which can adapt to different process requirements and has better applicability; 7) The polishing arm of each polishing module is independently controlled, Better stability and higher flexibility; 8) The working time of each polishing module can be independently controlled to adapt to different polishing requirements; 9) One fixed work station can realize the wafer loading and unloading of the polishing modules on both sides, and there is no need to move the fixed work station to approach the left polishing module or the right polishing module. The position adjustment is more convenient and accurate; 10) The setting of the transmission interval can avoid cross-contamination of different polishing processes between adjacent polishing units, and it is easy to maintain the polishing unit and the processing is more convenient.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a schematic diagram of two polishing units in Embodiment 1 of the present invention.

FIG. 2 is a schematic diagram of three polishing units in Embodiment 1 of the present invention.

FIG3 is a schematic diagram of a second fixed working position as a robot in the first embodiment of the present invention.

FIG. 4 is a schematic diagram of a wafer polishing system in Embodiment 2 of the present invention.

FIG. 5 is a schematic diagram of a wafer polishing system in Embodiment 3 of the present invention.

FIG. 6 is a first schematic diagram of a wafer polishing system in Embodiment 4 of the present invention.

FIG. 7 is a second schematic diagram of the wafer polishing system in the fourth embodiment of the present invention.

FIG8 is a first schematic diagram of a wafer polishing system in Embodiment 5 of the present invention.

FIG. 9 is a second schematic diagram of the wafer polishing system in the fifth embodiment of the present invention.

FIG. 10 is a schematic diagram of a wafer polishing system in Embodiment 6 of the present invention.

FIG. 11 is a schematic diagram of the structure of point A in FIG. 10 .

FIG. 12 is a schematic diagram of the structure at point B in FIG. 10 .

FIG13 is a partial schematic diagram of a wafer polishing system in Embodiment 7 of the present invention.

FIG. 14 is a schematic diagram of a wafer polishing system in Embodiment 7 of the present invention.

FIG15 is a partial schematic diagram of a wafer polishing system in the eighth embodiment of the present invention.

FIG16 is a partial schematic diagram of a wafer polishing system in Embodiment 9 of the present invention.

FIG. 17 is a partial schematic diagram of a wafer polishing system in the tenth embodiment of the present invention.

Among them, 1-polishing unit, 2-polishing module, 21-polishing platform, 22-polishing head, 221-first polishing head, 222-second polishing head, 223-third polishing head, 224-fourth polishing head, 3-first fixed working position, 31-another first fixed working position, 32-first fixed working position two, 33-first fixed working position three, 34-first fixed working position four, 35-first fixed working position five, 4-second fixed working position, 5-overlapping part, 51-intersection of the overlapping part, 6-transmission interval, 7-third fixed working position.

Detailed ways

In order to enable those skilled in the art to better understand the solutions of the present invention, the following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work should fall within the scope of protection of the present invention.

Embodiment 1

A wafer polishing system comprises at least two polishing units 1;

As shown in FIG1 , a single polishing unit 1 includes at least two polishing modules 2 and a first fixed work station 3. The single polishing module 2 includes a polishing platform 21 and a polishing head 22. The polishing head 22 can drive the wafer to move relative to the polishing platform 21 to achieve a polishing process. The movement here includes the synchronous movement of the wafer with the polishing head 22, and also includes the relative movement between the wafer and the polishing head 22. The polishing of at least two polishing modules 2 in the same polishing unit 1 The head 22 can transfer the wafer to the first fixed working position 3 .

At the same time, at least a second fixed work position 4 is provided between adjacent polishing units 1. At least two polishing heads 22 of adjacent polishing units 1 (two polishing units are provided with at least four polishing heads) can transfer the wafer to the second fixed work position 4.

Specifically, the first polishing head 221 of the upstream polishing unit 1 can transfer the wafer to the first fixed work position 3, and the second polishing head 222 of the upstream polishing unit 1 can transfer the wafer to the first fixed work position 3. At the same time, the second polishing head 222 of the upstream polishing unit 1 can transfer the wafer to the second fixed work position 4, and the third polishing head 223 of the downstream polishing unit 1 can transfer the wafer to the second fixed work position 4. In other words, the first fixed work position 3 corresponds to the first polishing head 221 and the second polishing head 222 of the upstream polishing unit 1, the second polishing head 222 corresponds to the first fixed work position 3 and the second fixed work position 4, and the third polishing head 223 corresponds to the first fixed work position 3 and the second fixed work position 4.

The active areas of the polishing heads 22 of the two polishing modules 2 of the adjacent polishing units 1 have an overlapping portion 5 , and the second fixed working position 4 is located in the overlapping portion 5 .

Specifically, the active areas of the second polishing head 222 of the upstream polishing unit 1 and the third polishing head 223 of the downstream polishing unit 1 have an overlapping portion 5 , and the second fixed working position 4 is located in the overlapping portion 5 .

More specifically, the axis of the second fixed work station 4 is located at the overlapped portion 5. More specifically, the axis of the second fixed work station 4 is located at the intersection 51 of the overlapped portion. In this embodiment, the second fixed work station 4 can be provided with a wafer loading and unloading platform or a robot, and the robot is an existing structure. In this case, it can be said that the center of the wafer loading and unloading platform is located at the intersection 51 of the overlapped portion, or the rotation axis of the robot is located at the intersection 51 of the overlapped portion. As shown in Figure 3. Of course, the second fixed work position 4 can also be a combination of a loading and unloading platform and a cleaning component, or a cleaning work position, where the cleaning work position does not necessarily have a specific structure, but can be the installation position of the nozzle.

In this embodiment, two polishing modules 2 are provided for each polishing unit 1, and a wafer loading and unloading platform is selected for detailed description. As can be seen from FIG1, the motion trajectory of the second polishing head 222 is an arc, or the motion trajectory is circular with a large rotation amplitude, and the motion trajectory passes through the axis of the first fixed work position 3 and the axis of the second fixed work position 4. The motion trajectory of the third polishing head 223 is an arc, or the motion trajectory is circular with a large rotation amplitude, and the motion trajectory passes through the axis of another first fixed work position 31 and the axis of the second fixed work position 4. Therefore, the intersection area of the center motion trajectory of the second polishing head 222 and the third polishing head 223 is eye-shaped. In other words, the intersection area of the center motion trajectory of the polishing heads of the two polishing modules of the adjacent polishing units is eye-shaped, and the axis of the second fixed work position 4 is located at the inner corner or outer corner of the eye, that is, located at the intersection of the center motion trajectory of the polishing heads of the two polishing modules of the adjacent polishing units.

The connection lines of the polishing modules in adjacent polishing units 1 are arranged in parallel, as shown in FIG1 , the connection line of the rotation axis of the polishing heads 22 of the two polishing modules 2 of the upstream polishing unit 1 is L1, and the connection line of the rotation axis of the polishing heads of the two polishing modules of the downstream polishing unit is L2, and L1 is parallel to L2. At this time, the second fixed working position 4 is located between the diagonally opposite polishing modules of the adjacent polishing units, more precisely, between the two diagonally closer polishing modules, that is, between the polishing module where the second polishing head 222 is located and the polishing module where the third polishing head 223 is located.

As shown in FIG. 2 , there are multiple polishing units 1, and the polishing units 1 are arranged along a straight line. Arrangement, in this embodiment, taking the direction shown in Figure 2 as an example, the upper one is defined as the upstream polishing unit, and the lower one is defined as the downstream polishing unit. The specific process sequence of the polishing system is not limited here, but is only for the convenience of explanation.

Embodiment 2

As shown in Figure 4, on the basis of Example 1, a polishing module can be further added on the left side. At this time, the polishing module on the left and the middle polishing module share the first fixed working position 2 32, and the second fixed working position 1 41 is set below the first fixed working position 2 32; the middle polishing module and the polishing module on the right share the first fixed working position 3, and the second fixed working position 4 is set below the first fixed working position 3.

In other words, the polishing modules 2 may be stacked in the width direction, and in this case, a single polishing unit 1 includes three polishing modules 2 .

Embodiment 3

As shown in FIG. 5 , the polishing units 1 are arranged along the direction of wafer transmission, which is the vertical direction in the figure. There is a transmission gap 6 between adjacent polishing units, and the second fixed working position 4 is located in the transmission gap 6 .

The setting of the transmission interval can avoid cross contamination of different polishing processes between adjacent polishing units, and is convenient for maintenance of the polishing units, making processing more convenient.

The rest is the same as that of the first embodiment and will not be described in detail.

Embodiment 4

As shown in FIG6 , the difference from the first embodiment is that the connection lines of the polishing modules in adjacent polishing units are arranged to intersect. The connection line of the polishing heads 22 of the two polishing modules 2 of the upstream polishing unit 1 is L1, and the connection line of the polishing heads 22 of the two polishing modules 2 of the downstream polishing unit is L2. The connecting line of the moving axis is L2, then L1 and L2 intersect. At this time, the second fixed work position 4 is located between the polishing modules on the same side of the adjacent polishing units, that is, between the polishing module where the second polishing head 222 is located and the polishing module where the fourth polishing head 224 is located. In the above case, the second fixed work position 4 is near the intersection of L1 and L2. Of course, it can also be said that the second fixed work position 4 is close to the perpendicular bisectors of the two polishing modules on the same side of the adjacent polishing units, or the second fixed work position 4 is close to the perpendicular bisectors of the diagonally opposite polishing modules of the adjacent polishing units. The perpendicular bisector of the polishing module here can be the perpendicular bisector between the polishing tables, or the perpendicular bisector of the rotating axis of the polishing head, without specific limitation.

As shown in FIG. 6 and FIG. 7 , the second fixed working position 4 may be located at the inner corner and the outer corner of the eye shape mentioned in the first embodiment.

The rest is the same as that of Embodiment 1 or Embodiment 3 and will not be described in detail.

Embodiment 5

As shown in FIG8 , the polishing unit 1 is arranged along an oblique line, that is, the polishing modules on one side of the polishing unit 1 are arranged along the direction of S1, and the polishing modules on the other side are arranged along the direction of S2, and S1 is parallel to S2.

As shown in Figure 9, the polishing unit 1 can stack polishing modules in the width direction, that is, the left polishing module of the polishing unit 1 is arranged along the direction of S3, the middle polishing module is arranged along the direction of S2, and the right polishing module is arranged along the direction of S1, and S1, S2, and S3 are parallel.

Embodiment 6

As shown in FIG. 10 , the polishing units 1 are arranged along the bending line. The number of polishing modules in the wafer may not be the same. There are many possibilities for the arrangement relationship between the polishing module, the first fixed working position, and the second fixed working position, which expands the transmission path of the wafer.

Of course, in other embodiments, the polishing units 1 may also be arranged along a curve.

As shown in FIG11 , at this time, one of the polishing units 1 includes three polishing modules, a first fixed work station 3, and a first fixed work station three 33. The first fixed work station 3 corresponds to serving the first polishing head 221 and the second polishing head 222, the first fixed work station 33 corresponds to serving the second polishing head 222 and the third polishing head 223, and the second polishing head 222 corresponds to the first fixed work station 3 and the first fixed work station three 33.

As shown in FIG. 12 , at this time, one of the polishing units 1 includes four polishing modules, a first fixed work station 3, a first fixed work station 4 34, and a first fixed work station 5 35. The first fixed work station 3 corresponds to serving the first polishing head 221 and the second polishing head 222, the first fixed work station 4 34 corresponds to serving the first polishing head 221 and the fourth polishing head 224, and the first fixed work station 5 35 corresponds to serving the third polishing head 223 and the fourth polishing head 224. The first polishing head 221 corresponds to the first fixed work station 3 and the first fixed work station 4 34, and the fourth polishing head 224 corresponds to the first fixed work station 4 34 and the first fixed work station 5 35.

When two minimum polishing units are combined to work, the two polishing heads corresponding to only one first fixed working position in the two polishing units are arranged close to each other, and a second fixed working position is arranged between the two polishing heads. Of course, the above two polishing heads must ensure that the active areas have overlapping parts. There is no specific restriction on the distribution of the polishing modules in the minimum polishing unit.

Embodiment 7

As shown in FIG. 13 , a third fixed working position 7 is further provided between adjacent polishing units 1 , and the axis of the third fixed working position 7 and the axis of the second fixed working position 4 are both located at the intersection of the overlapping portion 5 in the first embodiment.

The third fixed work station 7 can be a loading and unloading platform or a cleaning work station. Specifically, when the second fixed work station 4 is a cleaning work station, the third fixed work station 7 is a loading and unloading platform; when the second fixed work station 4 is a loading and unloading platform, the third fixed work station 7 is a cleaning work station.

In this embodiment, the circular motion trajectories of the polishing heads 22 of two polishing modules 2 in the same polishing unit 1 have one and only one intersection point D1, and the intersection area of the circular motion trajectories of the polishing heads 22 of two polishing modules 2 at diagonally opposite corners of adjacent polishing units 1 is eye-shaped, that is, the intersection area has two intersection points D2 and D3.

The axis center of the second fixed working position 4 and the axis center of the third fixed working position 7 are located at intersection points D2 and D3 of the intersection area of the center motion trajectory of the polishing head 22 .

As shown in FIG. 14 , the motion trajectory circle of the polishing head 22 of the end polishing unit 1 of the wafer polishing system is provided with at least one cleaning work station and one loading and unloading platform.

Define the cleaning workstation as C, the loading and unloading platform as W, and the polishing head as A. Both the polishing head A1 and the polishing head A2 can pass through the first fixed workstation 3 (W1). Both the polishing head A2 and the polishing head A3 can pass through the third fixed workstation 7 (W2) and the second fixed workstation 4 (W3).

Each wafer is polished three times in the following steps:

When each wafer needs to be polished three times, three polishing heads A1, A2, and A3 are used. In the first step, polishing head A1 takes the wafer from loading and unloading platform W1, rotates to the polishing area for polishing, and after polishing, puts the wafer on loading and unloading platform W2 and rotates to the cleaning work station C1 to wash the polishing head; In the second step, the polishing head A2 takes the wafer from the loading and unloading platform W1, rotates to the polishing area for polishing, and places the wafer on the loading and unloading platform W3 after polishing is completed, and rotates to the cleaning workstation C2 to wash the polishing head; in the third step, the polishing head A3 takes the wafer from the loading and unloading platform W3, rotates to the polishing area for polishing, and places the wafer on the loading and unloading platform W4 after polishing is completed, and rotates to the cleaning workstation C2 to wash the polishing head.

Using three polishing heads A4, A5 and A6, in the first step, polishing head A4 takes the wafer from loading and unloading platform W4, rotates to the polishing area for polishing, puts the wafer on loading and unloading platform W5 after polishing is completed, and rotates to cleaning work station C3 to wash the polishing head; in the second step, polishing head A5 takes the wafer from loading and unloading platform W5, rotates to the polishing area for polishing, puts the wafer on loading and unloading platform W6 after polishing is completed, and rotates to cleaning work station C3 to wash the polishing head; in the third step, polishing head A6 takes the wafer from loading and unloading platform W6, rotates to the polishing area for polishing, puts the wafer on loading and unloading platform W7 after polishing is completed, and rotates to cleaning work station C4 to wash the polishing head.

After a wafer has been polished three times, it is transferred outward by a robot for cleaning.

Each wafer is polished twice in the following steps:

When each wafer needs to be polished twice, two polishing heads A1 and A2 are used. In the first step, polishing head A1 takes the wafer from the loading and unloading platform W1, rotates to the polishing area for polishing, and puts the wafer on the loading and unloading platform W2 after polishing is completed, and rotates to the cleaning workstation C1 to wash the polishing head; in the second step, polishing head A2 takes the wafer from the loading and unloading platform W2, rotates to the polishing area for polishing, and puts the wafer on the loading and unloading platform W3 after polishing is completed, and rotates to the cleaning workstation C2 to wash the polishing head.

Using two polishing heads A3 and A4, in the first step, polishing head A3 takes the wafer from loading and unloading platform W3, rotates to the polishing area for polishing, and after polishing, puts the wafer on loading and unloading platform W4, and rotates to the cleaning workstation C2 to wash the polishing head; in the second step, polishing head A4 takes the wafer from loading and unloading platform W4, rotates to the polishing area for polishing, and after polishing, puts the wafer on loading and unloading platform W5, and rotates to the cleaning workstation C2 to wash the polishing head; Go to cleaning workstation C3 to wash the polishing head.

Using two polishing heads, A5 and A6, in the first step, polishing head A5 takes the wafer from the loading and unloading platform W5, rotates to the polishing area for polishing, and after polishing, puts the wafer on the loading and unloading platform W6, and rotates to the cleaning workstation C3 to wash the polishing head; in the second step, polishing head A6 takes the wafer from the loading and unloading platform W6, rotates to the polishing area for polishing, and after polishing, puts the wafer on the loading and unloading platform W7, and rotates to the cleaning workstation C4 to wash the polishing head.

After a wafer has been polished twice, it is transferred outward by a robot for cleaning.

The working steps for polishing each wafer once are:

When each wafer needs to be polished once, for example, polishing head A1 takes the wafer from loading and unloading station W1, rotates to the polishing area for polishing, and after polishing, puts the wafer on loading and unloading station W2 and rotates to cleaning station C1 to wash the polishing head.

After a wafer is polished once, it is transferred outward by a robot for cleaning.

Of course, the positions of the cleaning station C2 and the loading and unloading platform W3 can be interchanged.

Embodiment 8

As shown in FIG. 15 , in this embodiment, the intersection area of the center motion trajectories of the polishing heads 22 of the two polishing modules 2 in the same polishing unit 1 is eye-shaped, that is, the intersection area has two intersection points D0 and D1; the intersection area of the center motion trajectories of the polishing heads 22 of the two polishing modules 2 at the diagonal positions of the adjacent polishing units 1 is eye-shaped, that is, the intersection area has two intersection points D2 and D3

That is, two first fixed working positions 3 are set in a single polishing unit 1, which are the intersection points D0 and D1 of the center motion trajectory respectively; the axis of the second fixed working position 4 and the axis of the third fixed working position 7 are located at the intersection points D2 and D3 of the intersection area of the center motion trajectory of the polishing head 22.

The two polishing heads corresponding to only one first fixed working position in the adjacent polishing units are mutually They are arranged close to each other, and a second fixed working position is arranged between the two, that is, the polishing head on the right side of the upstream polishing unit and the polishing head on the left side of the downstream polishing unit in Figure 15 are arranged close to each other, and the second fixed working position 4 (W4) is arranged between the two.

Both the polishing head A1 and the polishing head A2 can pass through the two first fixed working positions 3 (W1 and W2). Both the polishing head A2 and the polishing head A3 can pass through the third fixed working position 7 (W3) and the second fixed working position 4 (W4).

Embodiment 9

As shown in Figure 16, in this embodiment, the intersection area of the central motion trajectories of the polishing heads 22 of two polishing modules 2 in the same polishing unit 1 is eye-shaped, that is, the intersection area has two intersection points D1 and D2, and the central motion trajectories of the polishing heads 22 of two polishing modules 2 at diagonally opposite corners of adjacent polishing units 1 have one and only one intersection point D3.

That is, two first fixed working positions 3 are arranged in a single polishing unit 1, which are intersection points D1 and D2 of the intersection area of the center movement trajectory, and the axis of the second fixed working position 4 is located at the intersection point D3 of the intersection area of the center movement trajectory of the polishing head 22.

Both the polishing head A1 and the polishing head A2 can pass through the two first fixed working positions 3 (W1 and W2). Both the polishing head A2 and the polishing head A3 can pass through the second fixed working position 4 (W3).

Embodiment 10

As shown in FIG. 17 , in this embodiment, the center motion trajectories of the polishing heads 22 of two polishing modules 2 in the same polishing unit 1 have one and only one intersection point D1, and the center motion trajectories of the polishing heads 22 of two polishing modules 2 at diagonally opposite corners of adjacent polishing units 1 have one and only one intersection point D3.

The axis of the first fixed working position 3 is located at the intersection D1, and the axis of the second fixed working position 4 is located at the intersection D2. The center is located at the intersection D3.

Both the polishing head A1 and the polishing head A2 can pass through the first fixed working position 3 (W1). Both the polishing head A2 and the polishing head A3 can pass through the second fixed working position 4 (W2).

The above specific implementation modes are used to explain the present invention rather than to limit the present invention. Any modification and change made to the present invention within the spirit of the present invention and the protection scope of the claims shall fall within the protection scope of the present invention.

Claims

A wafer polishing system, characterized in that:

comprising at least two polishing units;

A single polishing unit includes at least two polishing modules and a first fixed working position, wherein the polishing module includes a polishing platform and a polishing head;

At least two polishing heads in the same polishing unit can transfer the wafer to the first fixed working position;

At least a second fixed working position is provided between adjacent polishing units;

At least two polishing heads of adjacent polishing units can transfer the wafer to the second fixed working position.
The wafer polishing system according to claim 1 is characterized in that a third fixed working position is provided between adjacent polishing units.
The wafer polishing system according to claim 1 is characterized in that the active areas of the polishing heads of two polishing modules of adjacent polishing units have an overlapping portion, and the second fixed working position is located in the overlapping portion.
The wafer polishing system according to claim 3 is characterized in that the axis of the second fixed working position is located at the overlapping part.
The wafer polishing system according to claim 3 is characterized in that the second fixed work station is a loading and unloading platform, or a combination of a loading and unloading platform and a cleaning component, or a cleaning work station, or a robot.
The wafer polishing system according to claim 3 is characterized in that the axis center of the second fixed working position and the axis center of the third fixed working position are both located at the intersection of the overlapping parts.
The wafer polishing system according to claim 2 is characterized in that the second fixed work station and the third fixed work station are respectively a cleaning work station and a loading and unloading platform.
The wafer polishing system according to claim 2 is characterized in that: the motion trajectory of the polishing head is arc-shaped or circular, the motion trajectories of the center circles of the polishing heads of two polishing modules in the same polishing unit have one and only one intersection point, and the intersection area of the motion trajectories of the center circles of the polishing heads of two polishing modules at diagonally opposite corners of adjacent polishing units is eye-shaped.
The wafer polishing system according to claim 8 is characterized in that the axis center of the second fixed working position and the axis center of the third fixed working position are located at the intersection area of the intersection area of the polishing head center motion trajectory.
The wafer polishing system according to claim 8 is characterized in that the motion trajectory circle of the polishing head of the polishing unit at the end of the wafer polishing system is provided with at least one cleaning work station and one loading and unloading platform.
The wafer polishing system according to claim 1 is characterized in that the intersection area of the center motion trajectories of the polishing heads of two polishing modules in the same polishing unit is eye-shaped, and the intersection area of the center motion trajectories of the polishing heads of two polishing modules at diagonally opposite corners of adjacent polishing units is eye-shaped.
The wafer polishing system according to claim 1 is characterized in that the intersection area of the center motion trajectories of the polishing heads of two polishing modules in the same polishing unit is eye-shaped, and the center motion trajectories of the polishing heads of two polishing modules at diagonally opposite corners of adjacent polishing units have one and only one intersection point.
The wafer polishing system according to claim 1 is characterized in that the motion trajectories of the polishing heads of two polishing modules in the same polishing unit have one and only one intersection point, and the motion trajectories of the polishing heads of two polishing modules at diagonally opposite corners of adjacent polishing units have one and only one intersection point.
The wafer polishing system according to claim 1 is characterized in that the active area of the polishing head of at least one polishing module in the polishing unit passes through the axis of the first fixed working position and the second fixed working position.
The wafer polishing system according to claim 1 or 2 is characterized in that: at least two first fixed working positions are provided in a single polishing unit; two polishing heads corresponding to only one first fixed working position in adjacent polishing units are arranged close to each other, and a second fixed working position is arranged between the two.
The wafer polishing system according to claim 1 is characterized in that the connecting lines of the polishing modules in adjacent polishing units are arranged in parallel, and the second fixed working position is located between the diagonally opposite polishing modules of the adjacent polishing units.
The wafer polishing system according to claim 1 is characterized in that the connecting lines of the polishing modules in adjacent polishing units are arranged to intersect, and the second fixed working position is close to the intersection.
The wafer polishing system according to claim 1 is characterized in that the polishing units are arranged along the direction of wafer transmission, and there is a transmission gap between adjacent polishing units.
The wafer polishing system according to claim 1 is characterized in that: there are multiple polishing units, and the polishing units are arranged along a straight line, or the polishing units are arranged along a diagonal line, or the polishing units are arranged along a bending line.
The wafer polishing system according to claim 1 is characterized in that each polishing unit is provided with two polishing modules.
The wafer polishing system according to claim 1 or 2 is characterized in that: at least two first fixed working positions are provided in a single polishing unit; two polishing heads corresponding to only one first fixed working position in adjacent polishing units are arranged close to each other, and a second fixed working position is arranged between the two.