CN108995063A - A kind of method of diamond wire group technology cutting silicon wafer - Google Patents
A kind of method of diamond wire group technology cutting silicon wafer Download PDFInfo
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- CN108995063A CN108995063A CN201810924167.5A CN201810924167A CN108995063A CN 108995063 A CN108995063 A CN 108995063A CN 201810924167 A CN201810924167 A CN 201810924167A CN 108995063 A CN108995063 A CN 108995063A
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- silicon rod
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/04—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by tools other than rotary type, e.g. reciprocating tools
- B28D5/045—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by tools other than rotary type, e.g. reciprocating tools by cutting with wires or closed-loop blades
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Abstract
The present invention relates to Buddha's warrior attendant line cutting fields.A kind of method of diamond wire group technology cutting silicon wafer, the diamond wire (3) being wrapped between driving wheel (1) and driven wheel (2) cuts the silicon rod (6) of pushing, one end of diamond wire (3) is that unwrapping wire end (4) other end is take-up end (5), driving wheel (1) uses 0.265mm slot pitch, diamond wire (3) uses bus diameter for 65 μm of diamond wire, the whole height of silicon rod (6) cutting is 166mm, carries out silicon rod cutting by using two kinds of cutting technique combinations.The use of diamond wire is largely saved while meeting cutting silicon rod using cutting technique of the present invention.
Description
Technical field
The present invention relates to Buddha's warrior attendant line cutting fields.
Background technique
It is manufactured to be plated on steel wire surface by the electro-deposition effect of metal by diamond cutting secant for diamond particles
A kind of linear incision tool.By diamond wire saw machine, diamond cutting secant can form opposite grinding fortune between object
It is dynamic, to realize the purpose of cutting.Diamond cutting secant is mainly used in cutting for the hard brittle materials such as crystalline silicon and sapphire at present
It cuts.
Diamond wire is different from the cutting of traditional mortar, and the more important is exactly that can participate in effectively cutting in a manner of consolidation
Diamond it is more, coating is smaller than the mixture of mortar, and knife edge loss is also few, and silicon wafer understands multiple spot naturally, process of manufacture at
This reduction, photovoltaic investment cost performance increase, and can promote the development of photovoltaic.
And found in Buddha's warrior attendant wire cutting technology, the cutting of diamond wire carries out the incomplete phase of the extent of damage to diamond wire itself
Together, from the point of view of according to practical cutting detection, after steel wire cuts a knife, Buddha's warrior attendant linear wearing capacity is at 5 μm, that is to say, that cutting process mill
The only coating of damage, also not in contact with bus is arrived, so too big change will not occur for his material performance for carrier bus
Dynamic, this guarantees the stability of entire cutting process.
When Buddha's warrior attendant wire cutting, diamond has partial exfoliation or has mild wear, and cutting old line still has remaining cutting force,
How old wire cutting is efficiently used, it will help the reduction of diamond wire usage amount can save a large amount of cost for enterprise.
Summary of the invention
The technical problem to be solved by the present invention is to；How to efficiently use diamond wire to cut silicon rod, meets silicon
Under the premise of stick cutting requirement, diamond wire is saved.
The technical scheme adopted by the invention is that: a kind of method of diamond wire group technology cutting silicon wafer is wrapped in actively
Diamond wire (3) between wheel (1) and driven wheel (2) cuts the silicon rod (6) of pushing, and one end of diamond wire (3) is unwrapping wire
Holding (4) other end is take-up end (5), is carried out according to following step
Step 1: driving wheel (1) uses 0.265mm slot pitch, diamond wire (3) uses bus diameter for 65 μm of diamond wire, silicon rod
(6) whole height cut is 166mm；
Step 2: being cut using the first cutting technique to first group of silicon rod: under adjustment driving wheel (1) revolving speed and silicon rod (6)
Rate is pressed, makes the linear velocity 900m/min of diamond wire (3), first from unwrapping wire end (4) to take-up end (5) line sending 600m, then
From take-up end (5) to unwrapping wire end (4) loop line 580m in the process uniformly pushes silicon rod (6), completion pair after this process
The cutting of silicon rod 2mm；It readjusts driving wheel (1) revolving speed and silicon rod (6) pushes rate, make the linear velocity of diamond wire (3)
1200m/min, first from unwrapping wire end (4) to take-up end (5) line sending 480m, then from take-up end (5) to unwrapping wire end (4) loop line
455m, in the process uniformly pushes silicon rod (6), and the cutting to silicon rod 7mm is completed after this process；It readjusts actively
It takes turns (1) revolving speed and silicon rod (6) pushes rate, make the linear velocity 1500m/min of diamond wire (3), first from unwrapping wire end (4) to receipts
Line end (5) line sending 483m, then from take-up end (5) to unwrapping wire end (4) loop line 455m, in the process by silicon rod (6) uniformly under
It presses, the cutting to silicon rod 6mm is completed after this process；It readjusts driving wheel (1) revolving speed and silicon rod (6) pushes rate, make
The linear velocity of diamond wire (3) is 1500m/min, from unwrapping wire end (4) to take-up end (5) line sending 400m first, then from take-up end
(5) unwrapping wire end (4) loop line 370m is arrived, silicon rod (6) is uniformly pushed in the process, is completed after this process to silicon rod 45mm
Cutting；It readjusts driving wheel (1) revolving speed and silicon rod (6) pushes rate, make the linear velocity 1500m/min of diamond wire (3),
From unwrapping wire end (4) to take-up end (5) line sending 400m first, then from take-up end (5) to unwrapping wire end (4) loop line 370m, herein mistake
Silicon rod (6) is uniformly pushed in journey, the cutting to silicon rod 40mm is completed after this process；Readjust driving wheel (1) revolving speed
Rate is pushed with silicon rod (6), makes the linear velocity 1500m/min of diamond wire (3), is sent first from unwrapping wire end (4) to take-up end (5)
Line 400m, then from take-up end (5) to unwrapping wire end (4) loop line 373m, in the process uniformly pushes silicon rod (6), this process
After complete cutting to silicon rod 20mm；It readjusts driving wheel (1) revolving speed and silicon rod (6) pushes rate, make diamond wire (3)
Linear velocity be 1500m/min, from unwrapping wire end (4) to take-up end (5) line sending 370m first, then from take-up end (5) to unwrapping wire
(4) loop line 410m is held, in the process uniformly pushes silicon rod (6), the cutting to silicon rod 1mm is completed after this process；Weight
New adjustment driving wheel (1) revolving speed and silicon rod (6) push rate, make the linear velocity 1500m/min of diamond wire (3), first from putting
Line end (4) arrives take-up end (5) line sending 380m, then from take-up end (5) to unwrapping wire end (4) loop line 430m, in the process by silicon
Stick (6) uniformly pushes, and the cutting to silicon rod 24mm is completed after this process；Readjust driving wheel (1) revolving speed and silicon rod (6)
Rate is pushed, makes the linear velocity 1500m/min of diamond wire (3), first from unwrapping wire end (4) to take-up end (5) line sending 405m, so
Silicon rod (6) is uniformly pushed in the process, is completed after this process by from take-up end (5) to unwrapping wire end (4) loop line 450m afterwards
Cutting to silicon rod 5mm；It readjusts driving wheel (1) revolving speed and silicon rod (6) pushes rate, make the linear velocity of diamond wire (3)
1500m/min, first from unwrapping wire end (4) to take-up end (5) line sending 405m, then from take-up end (5) to unwrapping wire end (4) loop line
450m, in the process uniformly pushes silicon rod (6), and the cutting to silicon rod 4mm is completed after this process；It readjusts actively
It takes turns (1) revolving speed and silicon rod (6) pushes rate, make the linear velocity 1500m/min of diamond wire (3), first from unwrapping wire end (4) to receipts
Line end (5) line sending 475m, then from take-up end (5) to unwrapping wire end (4) loop line 525m, in the process by silicon rod (6) uniformly under
It presses, the cutting to silicon rod 3mm is completed after this process；It readjusts driving wheel (1) revolving speed and silicon rod (6) pushes rate, make
The linear velocity of diamond wire (3) is 1500m/min, from unwrapping wire end (4) to take-up end (5) line sending 505m first, then from take-up end
(5) unwrapping wire end (4) loop line 555m is arrived, silicon rod (6) is uniformly pushed in the process, is completed after this process to silicon rod 3mm
Cutting；It readjusts driving wheel (1) revolving speed and silicon rod (6) pushes rate, make the linear velocity 1200m/min of diamond wire (3),
From unwrapping wire end (4) to take-up end (5) line sending 505m first, then from take-up end (5) to unwrapping wire end (4) loop line 555m, herein mistake
Silicon rod (6) is uniformly pushed in journey, the cutting to silicon rod 6mm is completed after this process；
Step 3: being cut using the second cutting technique to next group of silicon rod: from unwrapping wire end (4) to take-up end (5) line sending
1300m adjusts driving wheel (1) revolving speed and silicon rod (6) and pushes rate, makes the linear velocity 960m/min of diamond wire (3), first from
Take-up end (5) line sending 540m is arrived at unwrapping wire end (4), then from take-up end (5) to unwrapping wire end (4) loop line 490m, in the process will
Silicon rod (6) uniformly pushes, and the cutting to silicon rod 3mm is completed after this process；Readjust driving wheel (1) revolving speed and silicon rod
(6) rate is pushed, the linear velocity 1360m/min of diamond wire (3), first from unwrapping wire end (4) to take-up end (5) line sending are made
540m, then from take-up end (5) to unwrapping wire end (4) loop line 500m, in the process uniformly pushes silicon rod (6), this process knot
The cutting to silicon rod 6mm is completed after beam；It readjusts driving wheel (1) revolving speed and silicon rod (6) pushes rate, make diamond wire (3)
Linear velocity is 1500m/min, first from unwrapping wire end (4) to take-up end (5) line sending 535m, then from take-up end (5) to unwrapping wire end
(4) loop line 500m, in the process uniformly pushes silicon rod (6), and the cutting to silicon rod 10mm is completed after this process；Again
It adjusts driving wheel (1) revolving speed and silicon rod (6) pushes rate, make the linear velocity 1500m/min of diamond wire (3), first from unwrapping wire
(4) are held to arrive take-up end (5) line sending 535m, then from take-up end (5) to unwrapping wire end (4) loop line 500m, in the process by silicon rod
(6) it uniformly pushes, the cutting to silicon rod 120mm is completed after this process；Readjust driving wheel (1) revolving speed and silicon rod (6)
Rate is pushed, makes the linear velocity 1500m/min of diamond wire (3), first from unwrapping wire end (4) to take-up end (5) line sending 535m, so
Silicon rod (6) is uniformly pushed in the process, is completed after this process by from take-up end (5) to unwrapping wire end (4) loop line 500m afterwards
Cutting to silicon rod 2mm；It readjusts driving wheel (1) revolving speed and silicon rod (6) pushes rate, make the linear velocity of diamond wire (3)
1500m/min, first from unwrapping wire end (4) to take-up end (5) line sending 535m, then from take-up end (5) to unwrapping wire end (4) loop line
500m, in the process uniformly pushes silicon rod (6), and the cutting to silicon rod 3mm is completed after this process；It readjusts actively
It takes turns (1) revolving speed and silicon rod (6) pushes rate, make the linear velocity 1500m/min of diamond wire (3), first from unwrapping wire end (4) to receipts
Line end (5) line sending 535m, then from take-up end (5) to unwrapping wire end (4) loop line 500m, in the process by silicon rod (6) uniformly under
It presses, the cutting to silicon rod 9mm is completed after this process；It readjusts driving wheel (1) revolving speed and silicon rod (6) pushes rate, make
The linear velocity of diamond wire (3) is 1320m/min, from unwrapping wire end (4) to take-up end (5) line sending 475m first, then from take-up end
(5) unwrapping wire end (4) loop line 530m is arrived, silicon rod (6) is uniformly pushed in the process, is completed after this process to silicon rod 1mm
Cutting；It readjusts driving wheel (1) revolving speed and silicon rod (6) pushes rate, make the linear velocity 1200m/min of diamond wire (3),
From unwrapping wire end (4) to take-up end (5) line sending 475m first, then from take-up end (5) to unwrapping wire end (4) loop line 535m, herein mistake
Silicon rod (6) is uniformly pushed in journey, the cutting to silicon rod 5mm is completed after this process；Readjust driving wheel (1) revolving speed and
Silicon rod (6) pushes rate, makes the linear velocity 1380m/min of diamond wire (3), first from unwrapping wire end (4) to take-up end (5) line sending
475m, then from take-up end (5) to unwrapping wire end (4) loop line 530m, in the process uniformly pushes silicon rod (6), this process knot
The cutting to silicon rod 5mm is completed after beam；
Step 4: from unwrapping wire end (4) to take-up end (5) line sending 2700m, then uses the first cutting technique identical with step 2
Next group of silicon rod is cut；
Step 5: repeating step 3 and step 4 until the cutting of all silicon rods finishes.
The beneficial effects of the present invention are: largely being saved while meeting cutting silicon rod using cutting technique of the present invention
The use of diamond wire.
Detailed description of the invention
Fig. 1 is cutter device front view schematic diagram of the present invention；
Fig. 2 is cutter device left view schematic diagram of the present invention；
Wherein, 1, driving wheel, 2, driven wheel, 3, diamond wire, 4, unwrapping wire end, 5, take-up end, 6, silicon rod.
Specific embodiment
As depicted in figs. 1 and 2, silicon wafer cut by diamond wire principle (in unwrapping wire end, is not drawn into figure) by actinobacillus wheel
Diamond wire is distributed on home roll (driving wheel) by unwrapping wire by coiling, and the home roll other end is received by reel (driven wheel) connection
Line wheel (is in take-up end, be not drawn into figure), and three's synchronous operation, diamond wire is in the case where high-speed motion, swaging under silicon rod
At cutting.
Existing cutting technique is as shown in Table 1
Table one
In upper table, the linear speed for being meant that diamond wire of linear speed wants first line sending (from actively in each bout cutting process
Taking turns to driven wheel) loop line (taking turns to driving wheel from driven) again complete to need in one group of diamond wire cutting process in cutting process
There is multi-round, after one group of Buddha's warrior attendant wire cutting, needs from driven wheel line sending 3km is actively taken turns to then according to same
Cutting technique carries out next group of silicon rod cutting.In prior art cutting, the cutting of every group of silicon rod is needed with 3km diamond wire.
Cutting technique of the invention is divided into two kinds, and the first cutting technique has cut one group of silicon using being cut shown in table
After stick, from driven wheel line sending 1.3km is actively taken turns to, then carry out cutting next group using the second cutting technique shown in table two
Silicon rod then from actively taking turns to driven wheel line sending 2.7km, then is cut using the first cutting technique, then from actively taking turns to
Driven wheel line sending 1.3km, then cut using the second cutting technique then from actively taking turns to driven wheel line sending 2.7km, then is adopted
Cut with the first cutting technique, then from actively taking turns to driven wheel line sending 1.3km, so circulation until all silicon rods all
It is complete by cutting.
Table two
Two groups of silicon rods of the present invention are 1.3km+2.7km=4km using diamond wire amount, and average every group of silicon rod is using diamond wire amount
2km.The present invention averagely saves 1km diamond wire amount relative to use every group of silicon rod of existing cutting technique completely.
Claims (1)
1. a kind of method of diamond wire group technology cutting silicon wafer, the diamond wire being wrapped between driving wheel (1) and driven wheel (2)
(3) silicon rod of pushing (6) is cut, one end of diamond wire (3) is that unwrapping wire end (4) other end is take-up end (5), feature
It is: is carried out according to following step
Step 1: driving wheel (1) uses 0.265mm slot pitch, diamond wire (3) uses bus diameter for 65 μm of diamond wire, silicon rod
(6) whole height cut is 166mm；
Step 2: being cut using the first cutting technique to first group of silicon rod: under adjustment driving wheel (1) revolving speed and silicon rod (6)
Rate is pressed, makes the linear velocity 900m/min of diamond wire (3), first from unwrapping wire end (4) to take-up end (5) line sending 600m, then
From take-up end (5) to unwrapping wire end (4) loop line 580m in the process uniformly pushes silicon rod (6), completion pair after this process
The cutting of silicon rod 2mm；It readjusts driving wheel (1) revolving speed and silicon rod (6) pushes rate, make the linear velocity of diamond wire (3)
1200m/min, first from unwrapping wire end (4) to take-up end (5) line sending 480m, then from take-up end (5) to unwrapping wire end (4) loop line
455m, in the process uniformly pushes silicon rod (6), and the cutting to silicon rod 7mm is completed after this process；It readjusts actively
It takes turns (1) revolving speed and silicon rod (6) pushes rate, make the linear velocity 1500m/min of diamond wire (3), first from unwrapping wire end (4) to receipts
Line end (5) line sending 483m, then from take-up end (5) to unwrapping wire end (4) loop line 455m, in the process by silicon rod (6) uniformly under
It presses, the cutting to silicon rod 6mm is completed after this process；It readjusts driving wheel (1) revolving speed and silicon rod (6) pushes rate, make
The linear velocity of diamond wire (3) is 1500m/min, from unwrapping wire end (4) to take-up end (5) line sending 400m first, then from take-up end
(5) unwrapping wire end (4) loop line 370m is arrived, silicon rod (6) is uniformly pushed in the process, is completed after this process to silicon rod 45mm
Cutting；It readjusts driving wheel (1) revolving speed and silicon rod (6) pushes rate, make the linear velocity 1500m/min of diamond wire (3),
From unwrapping wire end (4) to take-up end (5) line sending 400m first, then from take-up end (5) to unwrapping wire end (4) loop line 370m, herein mistake
Silicon rod (6) is uniformly pushed in journey, the cutting to silicon rod 40mm is completed after this process；Readjust driving wheel (1) revolving speed
Rate is pushed with silicon rod (6), makes the linear velocity 1500m/min of diamond wire (3), is sent first from unwrapping wire end (4) to take-up end (5)
Line 400m, then from take-up end (5) to unwrapping wire end (4) loop line 373m, in the process uniformly pushes silicon rod (6), this process
After complete cutting to silicon rod 20mm；It readjusts driving wheel (1) revolving speed and silicon rod (6) pushes rate, make diamond wire (3)
Linear velocity be 1500m/min, from unwrapping wire end (4) to take-up end (5) line sending 370m first, then from take-up end (5) to unwrapping wire
(4) loop line 410m is held, in the process uniformly pushes silicon rod (6), the cutting to silicon rod 1mm is completed after this process；Weight
New adjustment driving wheel (1) revolving speed and silicon rod (6) push rate, make the linear velocity 1500m/min of diamond wire (3), first from putting
Line end (4) arrives take-up end (5) line sending 380m, then from take-up end (5) to unwrapping wire end (4) loop line 430m, in the process by silicon
Stick (6) uniformly pushes, and the cutting to silicon rod 24mm is completed after this process；Readjust driving wheel (1) revolving speed and silicon rod (6)
Rate is pushed, makes the linear velocity 1500m/min of diamond wire (3), first from unwrapping wire end (4) to take-up end (5) line sending 405m, so
Silicon rod (6) is uniformly pushed in the process, is completed after this process by from take-up end (5) to unwrapping wire end (4) loop line 450m afterwards
Cutting to silicon rod 5mm；It readjusts driving wheel (1) revolving speed and silicon rod (6) pushes rate, make the linear velocity of diamond wire (3)
1500m/min, first from unwrapping wire end (4) to take-up end (5) line sending 405m, then from take-up end (5) to unwrapping wire end (4) loop line
450m, in the process uniformly pushes silicon rod (6), and the cutting to silicon rod 4mm is completed after this process；It readjusts actively
It takes turns (1) revolving speed and silicon rod (6) pushes rate, make the linear velocity 1500m/min of diamond wire (3), first from unwrapping wire end (4) to receipts
Line end (5) line sending 475m, then from take-up end (5) to unwrapping wire end (4) loop line 525m, in the process by silicon rod (6) uniformly under
It presses, the cutting to silicon rod 3mm is completed after this process；It readjusts driving wheel (1) revolving speed and silicon rod (6) pushes rate, make
The linear velocity of diamond wire (3) is 1500m/min, from unwrapping wire end (4) to take-up end (5) line sending 505m first, then from take-up end
(5) unwrapping wire end (4) loop line 555m is arrived, silicon rod (6) is uniformly pushed in the process, is completed after this process to silicon rod 3mm
Cutting；It readjusts driving wheel (1) revolving speed and silicon rod (6) pushes rate, make the linear velocity 1200m/min of diamond wire (3),
From unwrapping wire end (4) to take-up end (5) line sending 505m first, then from take-up end (5) to unwrapping wire end (4) loop line 555m, herein mistake
Silicon rod (6) is uniformly pushed in journey, the cutting to silicon rod 6mm is completed after this process；
Step 3: being cut using the second cutting technique to next group of silicon rod: from unwrapping wire end (4) to take-up end (5) line sending
1300m adjusts driving wheel (1) revolving speed and silicon rod (6) and pushes rate, makes the linear velocity 960m/min of diamond wire (3), first from
Take-up end (5) line sending 540m is arrived at unwrapping wire end (4), then from take-up end (5) to unwrapping wire end (4) loop line 490m, in the process will
Silicon rod (6) uniformly pushes, and the cutting to silicon rod 3mm is completed after this process；Readjust driving wheel (1) revolving speed and silicon rod
(6) rate is pushed, the linear velocity 1360m/min of diamond wire (3), first from unwrapping wire end (4) to take-up end (5) line sending are made
540m, then from take-up end (5) to unwrapping wire end (4) loop line 500m, in the process uniformly pushes silicon rod (6), this process knot
The cutting to silicon rod 6mm is completed after beam；It readjusts driving wheel (1) revolving speed and silicon rod (6) pushes rate, make diamond wire (3)
Linear velocity is 1500m/min, first from unwrapping wire end (4) to take-up end (5) line sending 535m, then from take-up end (5) to unwrapping wire end
(4) loop line 500m, in the process uniformly pushes silicon rod (6), and the cutting to silicon rod 10mm is completed after this process；Again
It adjusts driving wheel (1) revolving speed and silicon rod (6) pushes rate, make the linear velocity 1500m/min of diamond wire (3), first from unwrapping wire
(4) are held to arrive take-up end (5) line sending 535m, then from take-up end (5) to unwrapping wire end (4) loop line 500m, in the process by silicon rod
(6) it uniformly pushes, the cutting to silicon rod 120mm is completed after this process；Readjust driving wheel (1) revolving speed and silicon rod (6)
Rate is pushed, makes the linear velocity 1500m/min of diamond wire (3), first from unwrapping wire end (4) to take-up end (5) line sending 535m, so
Silicon rod (6) is uniformly pushed in the process, is completed after this process by from take-up end (5) to unwrapping wire end (4) loop line 500m afterwards
Cutting to silicon rod 2mm；It readjusts driving wheel (1) revolving speed and silicon rod (6) pushes rate, make the linear velocity of diamond wire (3)
1500m/min, first from unwrapping wire end (4) to take-up end (5) line sending 535m, then from take-up end (5) to unwrapping wire end (4) loop line
500m, in the process uniformly pushes silicon rod (6), and the cutting to silicon rod 3mm is completed after this process；It readjusts actively
It takes turns (1) revolving speed and silicon rod (6) pushes rate, make the linear velocity 1500m/min of diamond wire (3), first from unwrapping wire end (4) to receipts
Line end (5) line sending 535m, then from take-up end (5) to unwrapping wire end (4) loop line 500m, in the process by silicon rod (6) uniformly under
It presses, the cutting to silicon rod 9mm is completed after this process；It readjusts driving wheel (1) revolving speed and silicon rod (6) pushes rate, make
The linear velocity of diamond wire (3) is 1320m/min, from unwrapping wire end (4) to take-up end (5) line sending 475m first, then from take-up end
(5) unwrapping wire end (4) loop line 530m is arrived, silicon rod (6) is uniformly pushed in the process, is completed after this process to silicon rod 1mm
Cutting；It readjusts driving wheel (1) revolving speed and silicon rod (6) pushes rate, make the linear velocity 1200m/min of diamond wire (3),
From unwrapping wire end (4) to take-up end (5) line sending 475m first, then from take-up end (5) to unwrapping wire end (4) loop line 535m, herein mistake
Silicon rod (6) is uniformly pushed in journey, the cutting to silicon rod 5mm is completed after this process；Readjust driving wheel (1) revolving speed and
Silicon rod (6) pushes rate, makes the linear velocity 1380m/min of diamond wire (3), first from unwrapping wire end (4) to take-up end (5) line sending
475m, then from take-up end (5) to unwrapping wire end (4) loop line 530m, in the process uniformly pushes silicon rod (6), this process knot
The cutting to silicon rod 5mm is completed after beam；
Step 4: from unwrapping wire end (4) to take-up end (5) line sending 2700m, then uses the first cutting technique identical with step 2
Next group of silicon rod is cut；
Step 5: repeating step 3 and step 4 until the cutting of all silicon rods finishes.
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| CN201810924167.5A CN108995063A (en) | 2018-08-11 | 2018-08-11 | A kind of method of diamond wire group technology cutting silicon wafer |
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| CN201810924167.5A CN108995063A (en) | 2018-08-11 | 2018-08-11 | A kind of method of diamond wire group technology cutting silicon wafer |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112078039A (en) * | 2020-07-30 | 2020-12-15 | 长治高测新材料科技有限公司 | Cutting method for reducing diamond wire loss in crystal silicon multi-wire cutting |
| TWI812204B (en) * | 2021-05-14 | 2023-08-11 | 日揚科技股份有限公司 | Electrical discharge machining apparatus and method with adjustable processing parameters |
| US11833603B2 (en) | 2021-05-14 | 2023-12-05 | Highlight Tech Corp. | Electrical discharge machining apparatus and electrical discharge machining method with adjustable machining parameters |
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