CN109049371A - A kind of technique of 60 μm of Buddha's warrior attendant wire cuttings, 180 μ m thick monocrystalline silicon piece - Google Patents
A kind of technique of 60 μm of Buddha's warrior attendant wire cuttings, 180 μ m thick monocrystalline silicon piece Download PDFInfo
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- CN109049371A CN109049371A CN201810924168.XA CN201810924168A CN109049371A CN 109049371 A CN109049371 A CN 109049371A CN 201810924168 A CN201810924168 A CN 201810924168A CN 109049371 A CN109049371 A CN 109049371A
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- silicon rod
- unwrapping wire
- cutting
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/04—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by tools other than rotary type, e.g. reciprocating tools
- B28D5/045—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by tools other than rotary type, e.g. reciprocating tools by cutting with wires or closed-loop blades
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Abstract
The present invention relates to monocrystalline silicon pieces to cut field.A kind of technique of 60 μm of Buddha's warrior attendant wire cuttings, 180 μ m thick monocrystalline silicon piece, determines Buddha's warrior attendant line standard: direct 60 ± 2 μm of bus, Buddha's warrior attendant linear diameter: 72 ± 5 μm；Be broken 13 ± 0.5N of tension, determines that home roll slot pitch, home roll slot pitch=Buddha's warrior attendant linear diameter++ 5 μm of silicon wafer thickness=257 ± 5 μm select maximum value i.e. 262 μm as home roll slot pitch；Then the linear velocity of distribution adjustment active wheel speed and then adjustment diamond wire, while unwrapping wire and take-up speed are adjusted, while adjusting silicon rod and pushing speed.The present invention uses 60 μm of Buddha's warrior attendant wire cutting monocrystalline silicon pieces, and the piece number that monocrystalline silicon piece goes out is improved to 51/kg, and monocrystalline silicon piece production cost reaches 4 yuan/piece or so.
Description
Technical field
The present invention relates to monocrystalline silicon pieces to cut field.
Background technique
Diamond wire is different from the cutting of traditional mortar, and the more important is exactly that can participate in effectively cutting in a manner of consolidation
Diamond it is more, coating is smaller than the mixture of mortar, and knife edge loss is also few, and silicon wafer understands multiple spot naturally, process of manufacture at
This reduction, photovoltaic investment cost performance increase, and can promote the development of photovoltaic.The application of diamond wire is significant to silicon wafer factory, production
About 70% consumption is in cutting link in cost.Therefore the technological break-through of cutting line is the most important way of silicon wafer decrease machining cost
Diameter.Diamond wire saw speed is 2 times of common steel wire, therefore the depreciation of specific yield, artificial and energy cost will reduce by one
Half.The price of current diamond wire has declined to a great extent,.Let us say that, the large-scale application terms and conditions of diamond wire all at
It is ripe.
Summary of the invention
The technical problems to be solved by the present invention are: how to use 60 μm of 180 μ m thick monocrystalline silicon pieces of Buddha's warrior attendant wire cutting.
The technical scheme adopted by the invention is that: a kind of technique of 60 μm of 180 μ m thick monocrystalline silicon pieces of Buddha's warrior attendant wire cutting, really
The rigid line standard of deposit: direct 60 ± 2 μm of bus, Buddha's warrior attendant linear diameter: 72 ± 5 μm；Be broken 13 ± 0.5N of tension, determines home roll slot
Away from home roll slot pitch=Buddha's warrior attendant linear diameter++ 5 μm of silicon wafer thickness=257 ± 5 μm selects maximum value i.e. 262 μm as home roll slot pitch；It adjusts
Whole active wheel speed makes the linear velocity 960m/min of diamond wire, when distance is 1 μm between silicon rod and diamond wire, first from unwrapping wire
Take-up end line sending 530m is held, then from take-up end to unwrapping wire end loop line 490m, is in the process uniformly pushed silicon rod, this mistake
The cutting to silicon rod 3mm is completed after journey；Keep active wheel speed constant, first from unwrapping wire end to take-up end line sending 530m,
Then from take-up end to unwrapping wire end loop line 490m, silicon rod is uniformly pushed in the process, is completed after this process to silicon rod
The cutting of 2mm；Adjustment active wheel speed makes the linear velocity 1320m/min of diamond wire, first from unwrapping wire end to the line sending of take-up end
530m in the process uniformly pushes silicon rod then from take-up end to unwrapping wire end loop line 500m, completion pair after this process
The cutting of silicon rod 14mm；Adjustment active wheel speed makes the linear velocity 1500m/min of diamond wire, first from unwrapping wire end to take-up end
Line sending 535m in the process uniformly pushes silicon rod then from take-up end to unwrapping wire end loop line 515m, complete after this process
The cutting of pairs of silicon rod 112mm；Keep active wheel speed constant, first from unwrapping wire end to take-up end line sending 535m, then from receipts
Line end in the process uniformly pushes silicon rod to unwrapping wire end loop line 515m, completes to cut silicon rod 2mm after this process
It cuts；Keep active wheel speed constant, first from unwrapping wire end to take-up end line sending 480m, then from take-up end to unwrapping wire end loop line
530m in the process uniformly pushes silicon rod, and the cutting to silicon rod 6mm is completed after this process；Keep active wheel speed
It is constant, first from unwrapping wire end to take-up end line sending 480m, then from take-up end to unwrapping wire end loop line 530m, in the process by silicon
Stick uniformly pushes, and the cutting to silicon rod 10mm is completed after this process；Keep active wheel speed it is constant, first from unwrapping wire end to
Line sending 480m in take-up end in the process uniformly pushes silicon rod then from take-up end to unwrapping wire end loop line 530m, this process knot
The cutting to silicon rod 5mm is completed after beam；Adjustment active wheel speed makes the linear velocity 1300m/min of diamond wire, first from unwrapping wire
Take-up end line sending 475m is held, then from take-up end to unwrapping wire end loop line 530m, is in the process uniformly pushed silicon rod, this mistake
The cutting to silicon rod 5mm is completed after journey；Adjustment active wheel speed makes the linear velocity 1320m/min of diamond wire, first from
Unwrapping wire end, then from take-up end to unwrapping wire end loop line 530m, in the process uniformly pushes silicon rod to take-up end line sending 475m,
The cutting to silicon rod 6mm is completed after this process；Adjustment active wheel speed makes the linear velocity 1020m/min of diamond wire, first
It is in the process that silicon rod is uniform then from take-up end to unwrapping wire end loop line 530m first from unwrapping wire end to take-up end line sending 475m
It pushes, the cutting to silicon rod whole is completed after this process.
The beneficial effects of the present invention are: the present invention uses 60 μm of Buddha's warrior attendant wire cutting monocrystalline silicon pieces, monocrystalline silicon piece goes out the piece number and mentions
Up to 51/kg, monocrystalline silicon piece production cost reach 4 yuan/piece or so.
Specific embodiment
Formulate Buddha's warrior attendant line standard:
Bus direct 60 ± 2, Buddha's warrior attendant linear diameter: 72 ± 5 μm；Be broken 13 ± 0.5N of tension.
Formulate home roll slot pitch:
Silicon wafer thickness=home roll slot pitch--5 μm of Buddha's warrior attendant linear diameter (attrition value) is 180 μm according to silicon wafer thickness is calculated, home roll slot pitch
It is set as 262 μm
Formulate 60 Buddha's warrior attendant wire cutting technologies；
(1) tension improves: ensuring steel wire cutting power and line bow size；
(2) inlet wire, anti-line ratio, it is ensured that silicon wafer cutting lines is good, and Si wafer quality appearance is avoided to decline；
(3) steel wire accelerates the period, cutting power can be improved, but first ensure that home roll load capacity；
(4) new line usage amount, it is ensured that diamond wire cutting power, while guaranteeing the control of cutting cost；
(5) feed velocity, the control of productivity, it is ensured that high efficiency cutting, while guaranteeing that silicon wafer cuts quality；
Specific cutting process see the table below shown
Using 60 μm of Buddha's warrior attendant wire cutting monocrystalline silicon pieces, by reducing steel wire diameter, and then reduces diamond wire and silicon material is worn, increase
Silicon wafer monolithic slice quantity.
Claims (1)
1. a kind of technique of 60 μm of 180 μ m thick monocrystalline silicon pieces of Buddha's warrior attendant wire cutting, it is characterised in that: determine Buddha's warrior attendant line standard: female
Direct 60 ± 2 μm of line, Buddha's warrior attendant linear diameter: 72 ± 5 μm；Be broken 13 ± 0.5N of tension, determines home roll slot pitch, home roll slot pitch=Buddha's warrior attendant
Linear diameter++ 5 μm of silicon wafer thickness=257 ± 5 μm, selects maximum value i.e. 262 μm as home roll slot pitch；Adjustment active wheel speed makes gold
The linear velocity of rigid line is 960m/min, when distance is 1 μm between silicon rod and diamond wire, first from unwrapping wire end to the line sending of take-up end
530m in the process uniformly pushes silicon rod then from take-up end to unwrapping wire end loop line 490m, completion pair after this process
The cutting of silicon rod 3mm；Keep active wheel speed it is constant, first from unwrapping wire end to take-up end line sending 530m, then from take-up end to
Unwrapping wire end loop line 490m, in the process uniformly pushes silicon rod, and the cutting to silicon rod 2mm is completed after this process；Adjustment
Active wheel speed makes the linear velocity 1320m/min of diamond wire, first from unwrapping wire end to take-up end line sending 530m, then from take-up
Unwrapping wire end loop line 500m is held, in the process uniformly pushes silicon rod, the cutting to silicon rod 14mm is completed after this process；
Adjustment active wheel speed makes the linear velocity 1500m/min of diamond wire, first from unwrapping wire end to take-up end line sending 535m, then from
Take-up end in the process uniformly pushes silicon rod to unwrapping wire end loop line 515m, completes after this process to silicon rod 112mm's
Cutting；Keep active wheel speed constant, first from unwrapping wire end to take-up end line sending 535m, then from take-up end to unwrapping wire end loop line
515m in the process uniformly pushes silicon rod, and the cutting to silicon rod 2mm is completed after this process；Keep active wheel speed
It is constant, first from unwrapping wire end to take-up end line sending 480m, then from take-up end to unwrapping wire end loop line 530m, in the process by silicon
Stick uniformly pushes, and the cutting to silicon rod 6mm is completed after this process；Keep active wheel speed it is constant, first from unwrapping wire end to
Line sending 480m in take-up end in the process uniformly pushes silicon rod then from take-up end to unwrapping wire end loop line 530m, this process knot
The cutting to silicon rod 10mm is completed after beam；Keep active wheel speed constant, first from unwrapping wire end to take-up end line sending 480m, then
From take-up end to unwrapping wire end loop line 530m, silicon rod is uniformly pushed in the process, is completed after this process to silicon rod 5mm's
Cutting；Adjustment active wheel speed makes the linear velocity 1300m/min of diamond wire, first from unwrapping wire end to take-up end line sending 475m,
Then from take-up end to unwrapping wire end loop line 530m, silicon rod is uniformly pushed in the process, is completed after this process to silicon rod
The cutting of 5mm；Adjustment active wheel speed makes the linear velocity 1320m/min of diamond wire, first from unwrapping wire end to the line sending of take-up end
475m in the process uniformly pushes silicon rod then from take-up end to unwrapping wire end loop line 530m, completion pair after this process
The cutting of silicon rod 6mm；Adjustment active wheel speed makes the linear velocity 1020m/min of diamond wire, first from unwrapping wire end to take-up end
Line sending 475m in the process uniformly pushes silicon rod then from take-up end to unwrapping wire end loop line 530m, complete after this process
The cutting of pairs of silicon rod whole.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810924168.XA CN109049371A (en) | 2018-08-11 | 2018-08-11 | A kind of technique of 60 μm of Buddha's warrior attendant wire cuttings, 180 μ m thick monocrystalline silicon piece |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201810924168.XA CN109049371A (en) | 2018-08-11 | 2018-08-11 | A kind of technique of 60 μm of Buddha's warrior attendant wire cuttings, 180 μ m thick monocrystalline silicon piece |
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| CN109049371A true CN109049371A (en) | 2018-12-21 |
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| CN201810924168.XA Pending CN109049371A (en) | 2018-08-11 | 2018-08-11 | A kind of technique of 60 μm of Buddha's warrior attendant wire cuttings, 180 μ m thick monocrystalline silicon piece |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN115648464A (en) * | 2022-10-31 | 2023-01-31 | 北京天科合达半导体股份有限公司 | Cutting method and cutting device for crystal bar |
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2018
- 2018-08-11 CN CN201810924168.XA patent/CN109049371A/en active Pending
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| JP2009061528A (en) * | 2007-09-05 | 2009-03-26 | Denso Corp | Method of manufacturing silicon carbide substrate by wire and wire saw device for manufacturing silicon carbide substrate |
| CN106584687A (en) * | 2015-10-16 | 2017-04-26 | 西安中晶半导体材料有限公司 | Monocrystalline silicon wafer cutting device and method |
| CN107718333A (en) * | 2017-08-24 | 2018-02-23 | 天津市环欧半导体材料技术有限公司 | A kind of technique of 60um diameters Buddha's warrior attendant wire cutting silicon |
| CN107901256A (en) * | 2017-11-15 | 2018-04-13 | 山东大海新能源发展有限公司 | The device and cutting method of Buddha's warrior attendant wire cutting polysilicon chip |
| CN108357002A (en) * | 2018-03-20 | 2018-08-03 | 山东大海新能源发展有限公司 | A kind of solar energy-level silicon wafer and its production method |
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| CN115648464A (en) * | 2022-10-31 | 2023-01-31 | 北京天科合达半导体股份有限公司 | Cutting method and cutting device for crystal bar |
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