CN110466085A - The method of cutting silicon rod - Google Patents
The method of cutting silicon rod Download PDFInfo
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- CN110466085A CN110466085A CN201910671692.5A CN201910671692A CN110466085A CN 110466085 A CN110466085 A CN 110466085A CN 201910671692 A CN201910671692 A CN 201910671692A CN 110466085 A CN110466085 A CN 110466085A
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- cutting
- line amount
- line
- feed speed
- silicon rod
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28D—WORKING STONE OR STONE-LIKE MATERIALS
- B28D5/00—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor
- B28D5/04—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by tools other than rotary type, e.g. reciprocating tools
- B28D5/045—Fine working of gems, jewels, crystals, e.g. of semiconductor material; apparatus or devices therefor by tools other than rotary type, e.g. reciprocating tools by cutting with wires or closed-loop blades
Abstract
The invention discloses a kind of methods of cutting silicon rod, this method comprises: silicon rod is carried out sticky stick processing；By on the silicon rod after bonding on board and being fixed；Cutting process is carried out to silicon rod, the different location adjustment new line in cutting process in crystal section runs line amount and/or feed speed.It is possible thereby to significantly improve the quality that cutting obtains silicon wafer.
Description
Technical field
The invention belongs to crystal bars to cut field, specifically, the present invention relates to the sides of mortar or diamond wire saw silicon rod
Method.
Background technique
Existing crystal bar cutting method mainly uses mortar cutting and diamond wire saw.Mortar cutting is by one
The steel wire of high-speed motion drives the cutting mortar being attached on steel wire to rub silicon rod, to achieve the effect that cutting.Its
Middle cutting mortar is mixed according to a certain percentage by polyethylene glycol and silicon carbide micro-powder.Buddha's warrior attendant linear cutter mode is mainly benefit
Being driven with the steel wire of high speed, there is the high-intensitive abrasive material with the sharp basil to cut to crystal bar.
For the silicon rod cutting of small size, mortar cutting is cut using oil base, more with line amount, can be using fixed feeding
Speed cutting.Diamond wire is usually fixed line amount, fixed feed speed cutting.But as silicon rod becomes large-sized, utilization is existing
TTV (total thickness deviation) value of cutting method, silicon wafer is bigger than normal, causes yield low, at high cost.
Summary of the invention
The present invention is directed to solve at least some of the technical problems in related technologies.For this purpose, of the invention
One purpose is a kind of method for proposing cutting silicon rod, and the quality of silicon wafer can be significantly improved using this method.
According to an aspect of the present invention, the invention proposes a kind of method of cutting silicon rod, implementations according to the present invention
Example, this method comprises: silicon rod is carried out sticky stick processing；By on the silicon rod after bonding on board and being fixed；To silicon rod into
Row cutting process, the different location adjustment new line in cutting process in crystal section run line amount and/or feed speed.To make
It obtains in cutting process and maintains identical cutting power, guarantee the stability of cutting, improve processing performance, it is particularly possible to reduce silicon wafer
TTV value.
In addition, the method for diamond multi-wire saw silicon rod according to the above embodiment of the present invention can also have following add
Technical characteristic:
In some embodiments of the invention, the method is mortar cutting method or diamond wire saw method.
In some embodiments of the invention, the method is mortar cutting method, is carrying out cutting process to silicon rod
The feed speed of cutting is adjusted in the process, in which:
During carrying out the cutting process, set loop line amount as 500~800m/min, new line run line amount be 850~
950m/min, and the new line runs line amount and the loop line runs 5% of difference greater than the loop line amount of line amount, setting feeding speed
Degree is carried out according to formula 1:
Vx is the feed speed at cutting position x,
R is the radius of silicon crystal bar,
X is the feeding length in cut direction,
Vc is feed speed Vc=0.6~1.2mm/min in cutting position x=R.
In some embodiments of the invention, the method is mortar cutting method, is carrying out cutting process to silicon rod
Adjustment new line runs line amount in the process, in which:
Before starting to carry out the cutting process, loop line amount is set as 500~800m/min, feed speed Vc=0.6~
1.2mm/min；
After starting the cutting process, the loop line amount and the feed speed are remained unchanged, and are adjusted the new line and are run
Line amount is carried out according to formula 2:
Wx is that the new line at cutting position x runs line amount,
R is the radius of silicon crystal bar,
X is the feeding length in cut direction,
Wc is the new line line amount in cutting position x=R, Wc=850~950m/min.
Wherein, as Wx < loop line amount * 1.05, Wx=loop line amount * 1.05 is set at this time.
In some embodiments of the invention, the feed speed or new line that cutting is set in cutting process run the adjustment of line amount
At least 45 stages.In cutting process, with the difference of cutting area, cut with same cutting speed or race line amount
It cuts, cutting power can be unstable, by the adjustment to cutting speed and/or race line amount, guarantees steel wire in each of cutting area
Stage uniform force ensure that the stabilization of cutting, improve the quality of silicon wafer TTV.
In some embodiments of the invention, during carrying out the cutting process, so that the tension stability of steel wire exists
Within the scope of 30~35N, the linear velocity of the cutting process is 700~1500m/min.Mortar cutting mainly using 1400# and
The line of 1600# keeps tension stability in 30~35N, and overtension is easy broken string, and the too small then cutting force degree of tension is inadequate, influences
Surface quality.Cooperating certain linear velocity, so that cutting is more stable, quality is more stable.
In some embodiments of the invention, the method is diamond wire saw method, is carrying out cut place to silicon rod
During reason, when cutting 0-15% and 85-100% that feeding length is silicon rod diameter, adjustment new line runs line amount；And/or work as
The feed speed of adjustment cutting when cutting the 15-85% that feeding length is silicon rod diameter.
In some embodiments of the invention, the method be diamond wire saw method, adjustment new line run line amount according to
The following steps carry out:
Before starting to carry out the cutting process, loop line amount is set as 500~800m/min, the first new line runs line amount and is
850~950m/min, feed speed are 0.6~1.2mm/min；
After starting the cutting process, the loop line amount and the feed speed are remained unchanged, and it is new to adjust described first
It is that the second new line runs line amount that line, which runs line amount, and second new line is run line amount and carried out according to formula 3:
R is the radius of silicon crystal bar,
X is the feeding length in cut direction.
In some embodiments of the invention, feed speed 0.6mm/min.
In some embodiments of the invention, the method is diamond wire saw method, adjusts feed speed under
Column step carries out:
During carrying out the cutting process, set loop line amount as 500~800m/min, new line run line amount be 850~
950m/min, setting feed speed are carried out according to formula 4:
Vx is the feed speed at cutting position x,
R is the radius of silicon crystal bar,
X is the feeding length in cut direction,
Vc is the feed speed in cutting position x=R, Vc=0.6~1.2mm/min.
In some embodiments of the invention, the method be diamond wire saw method, the cutting process using water,
It is water base to be used as cutting fluid.Pure water or water base as cutting fluid is used during above-mentioned cutting process, if doing internal circulation life
Production has been easier to silicon powder in silicon chip surface and remains in surface, thus be normally use it is water base as cutting fluid, if not doing inside
Circulation production does not remain any foul in silicon chip surface, so directly degumming, is cleaned without using any detergent, this
Condition uses pure water as cutting fluid, and the cleannes on cleaning silicon chip surface after cutting can be improved, silicon wafer quality is effectively ensured.
In some embodiments of the invention, the feed speed or new line that cutting is set in cutting process run the adjustment of line amount
At least 45 stages.In cutting process, with the difference of cutting area, cut with same cutting speed or race line amount
It cuts, cutting power can be unstable, by the adjustment to cutting speed and/or race line amount, guarantees steel wire in each of cutting area
Stage uniform force ensure that the stabilization of cutting, improve the quality of silicon wafer TTV.
In some embodiments of the invention, during carrying out the cutting process, so that the tension stability of steel wire exists
Within the scope of 20~35N, the linear velocity of the cutting process is 700~1500m/min.Diamond wire saw mainly uses
The line of 1200# and 1400# keeps tension stability in 30~35N, and overtension is easy broken string, and the too small then cutting force degree of tension is not
It is enough, influence surface quality.Cooperating certain linear velocity, so that cutting is more stable, quality is more stable.
Heretofore described loop line amount refers to the line amount specified in each race line circulation back in entire cutting process；
New line amount refers to the line amount for specifying in entire cutting process and opening and seeing off in each race line circulation of cut end；Feed speed refers to whole
The feed speed of fixed silicon rod is specified in a cutting process.
Detailed description of the invention
Fig. 1 is the signal of cut direction in the method for diamond multi-wire saw silicon rod according to an embodiment of the invention
Scheme, 1- main shaft, 2- main wheel, the feeding length on 3- crystal bar 4- steel wire or diamond wire x- cut direction, at R- maximum gauge
Length.
Fig. 2 is the TTV value comparison diagram of embodiment and comparative example.
Fig. 3 is the TTV value comparison diagram of embodiment and comparative example.
Specific embodiment
The embodiment of the present invention is described below in detail, examples of the embodiments are shown in the accompanying drawings, wherein from beginning to end
Same or similar label indicates same or similar element or element with the same or similar functions.Below with reference to attached
The embodiment of figure description is exemplary, it is intended to is used to explain the present invention, and is not considered as limiting the invention.
According to an aspect of the present invention, the invention proposes a kind of method of cutting silicon rod, implementations according to the present invention
Example, this method comprises: silicon rod is carried out sticky stick processing；By on the silicon rod after bonding on board and being fixed；To silicon rod into
Row cutting process, the different location adjustment new line in cutting process in crystal section run line amount and/or feed speed.And then make
Obtain has identical cutting power in cutting process, guarantees the stability of cutting, improves processing performance, it is particularly possible to reduce silicon wafer
TTV value.
Firstly, being described in detail below to using the method for mortar cutting silicon rod.
According to one embodiment of present invention, when using mortar cutting method, in the mistake for carrying out cutting process to silicon rod
The feed speed of cutting is adjusted in journey, in which:
During carrying out the cutting process, set loop line amount as 500~800m/min, new line run line amount be 850~
950m/min, and the new line runs line amount and the loop line runs 5% of difference greater than the loop line amount of line amount, setting feeding speed
Degree is carried out according to formula 1:
Vx is the feed speed at cutting position x,
R is the radius of silicon crystal bar,
X is the feeding length in cut direction,
Vc is feed speed Vc=0.6~1.2mm/min in cutting position x=R.
As a result, inventors have found that when using mortar cutting method cutting silicon rod, feed speed is adjusted according to formula 1, is guaranteed
Steel wire guarantees to cut in each stage uniform force of cutting area so that maintaining identical cutting power in cutting process
The stability cut improves processing performance, it is particularly possible to reduce the TTV value of silicon wafer.
According to another embodiment of the invention, when using mortar cutting method, cutting process is being carried out to silicon rod
Adjustment new line runs line amount in the process, in which:
Before starting to carry out the cutting process, loop line amount is set as 500~800m/min, feed speed Vc=0.6~
1.2mm/min；
After starting the cutting process, the loop line amount and the feed speed are remained unchanged, and are adjusted the new line and are run
Line amount is carried out according to formula 2:
Wx is that the new line at cutting position x runs line amount,
R is the radius of silicon crystal bar,
X is the feeding length in cut direction,
Wc is the new line line amount in cutting position x=R, Wc=850~950m/min.
Wherein, as Wx < loop line amount * 1.05, Wx=loop line amount * 1.05 is set at this time.
Inventor also found as a result, when using mortar cutting method cutting silicon rod, adjusts new line according to formula 2 and runs line amount,
Guarantee that steel wire in each stage uniform force of cutting area, so that maintaining identical cutting power in cutting process, is protected
The stability of cutting is demonstrate,proved, improves processing performance, it is particularly possible to reduce the TTV value of silicon wafer.
According to a particular embodiment of the invention, in above-mentioned mortar cutting method, the cutting process is made using water base, oil base
For cutting fluid.
Secondly, being described in detail below to using the method for diamond wire saw silicon rod.Diamond multi-wire saw silicon rod
Method in cut direction schematic diagram as shown in Figure 1,1- main shaft, 2- main wheel, 3- crystal bar 4- steel wire or diamond wire x be cutting
Feeding length on direction, R are the length at maximum gauge.
When according to one embodiment of present invention, using diamond wire saw silicon rod, cutting process is being carried out to silicon rod
Adjustment new line runs line amount in the process.According to a particular embodiment of the invention, adjustment new line race line amount specifically can be according to following
Step carries out:
Before starting to carry out the cutting process, loop line amount is set as 500~800m/min, the first new line runs line amount and is
850~950m/min, feed speed are 0.6~1.2mm/min；
After starting the cutting process, the loop line amount and the feed speed are remained unchanged, and it is new to adjust described first
It is that the second new line runs line amount that line, which runs line amount, and second new line is run line amount and carried out according to formula 3:
R is the radius of silicon crystal bar,
X is the feeding length in cut direction.
New line is continuously adjusted according to formula 3 during cutting as a result, and runs line amount, guarantees steel wire in each of cutting area
A stage uniform force guarantees the stability of cutting so that maintaining identical cutting power in cutting process, improves processing
Performance, it is particularly possible to reduce the TTV value of silicon wafer.
According to a particular embodiment of the invention, above-mentioned feed speed is preferably 0.6mm/min.As a result, in the feed speed
Under, line amount is run by continuously adjusting new line, can be further improved the stability of cutting.
According to another embodiment of the invention, during carrying out cutting process to silicon rod, feed speed is only adjusted.
According to a particular embodiment of the invention, adjustment feed speed can specifically be carried out according to the following steps:
During carrying out the cutting process, set loop line amount as 500~800m/min, new line run line amount be 850~
950m/min, adjustment feed speed are carried out according to formula 4:
Vx is the feed speed at cutting position x,
R is the radius of silicon crystal bar,
X is the feeding length (as shown in Figure 1) in cut direction,
Vc is the feed speed in cutting position x=R, Vc=0.6~1.2mm/min.
Still another embodiment in accordance with the present invention, to silicon rod carry out cutting process during adjustment new line run line amount and
Feed speed.
Specifically, before starting to carry out the cutting process, loop line amount is set as 500~800m/min, the first new line is run
Line amount is 850~950m/min, and after starting the cutting process, the loop line amount is remained unchanged, and adjusts first new line
Running line amount is that the second new line runs line amount and sets feed speed, wherein the second new line is run line amount and carried out according to formula 3, concurrently sets
Feed speed is carried out according to formula 4:
Formula 3:R is the radius of silicon crystal bar, and x is edge
Feeding length in cut direction；
Formula 4:Vx is the feed speed at cutting position x, and R is the radius of silicon crystal bar,
X is the feeding length in cut direction, and Vc is the feed speed in cutting position x=R, Vc=0.6~1.2mm/min.
Thereby it is ensured that each stage uniform force of the steel wire in cutting area, so that being maintained in cutting process identical
Cutting power, guarantee cutting stability, improve processing performance, it is particularly possible to reduce the TTV value of silicon wafer.
According to a particular embodiment of the invention, further, inventors have found that being silicon rod diameter in cutting feeding length
The increase rate in the two stages of 0-15% and 85-100%, unit cutting area is bigger, for guarantor unit's cutting area
Each stage uniform force.Inventors have found that difference design cutting feeding length is the 0-15% and 85- of silicon rod diameter
The new line in 100% the two stages and 15-85% stage runs line amount and feed speed, can make each of unit cutting area
The uniform force in a stage.Specifically, during carrying out cutting process to silicon rod, when cutting feeding length is silicon rod diameter
0-15% and 85-100% when adjustment new line run line amount；And/or the tune when cutting the 15-85% that feeding length is silicon rod diameter
The feed speed of whole cutting.
Wherein, according to one embodiment of present invention, as the 0-15% and 85- that cutting feeding length is silicon rod diameter
New line is adjusted when 100% runs line amount.Specific example according to the present invention, adjustment new line are run line measurer body and are retouched according to preceding embodiment
The method stated carries out, it may be assumed that
Before starting to carry out the cutting process, loop line amount is set as 500~800m/min, the first new line runs line amount and is
850~950m/min, feed speed are 0.6~1.2mm/min；
After starting the cutting process, the loop line amount and the feed speed are remained unchanged, when cutting feeding length
For silicon rod diameter 0-15% and 85-100% when, adjust first new line and run line amount and be that the second new line runs line amount, and in
Between the 15-85% stage, new line run line amount according to preset first new line run line amount carry out.Specifically, described second is new
Line runs line amount and carries out according to formula 3:
R is the radius of silicon crystal bar, and x is the feeding length in cut direction.
According to another embodiment of the invention, the adjustment cutting when cutting the 15-85% that feeding length is silicon rod diameter
Feed speed.And in the two stages of 0-15% and 85-100%, feed speed is 0.6 according to preset feed speed
~1.2mm/min is carried out.According to a particular embodiment of the invention, adjustment feed speed can be specifically private description according to front
Method carry out, it may be assumed that
During carrying out the cutting process, set loop line amount as 500~800m/min, new line run line amount be 850~
950m/min, setting feed speed are carried out according to formula 4:
Vx is the feed speed at cutting position x, and R is the radius of silicon crystal bar, and x is the feeding length in cut direction, Vc
For feed speed Vc=0.6~1.2mm/min in cutting position x=R.
Still another embodiment in accordance with the present invention adjusts separately new line race during carrying out cutting process to silicon rod
Line amount and feed speed.Specifically, when cutting 0-15% and 85-100% that feeding length is silicon rod diameter, adjustment new line is run
Line amount；And when cutting the 15-85% that feeding length is silicon rod diameter, adjust the feed speed of cutting.
According to a particular embodiment of the invention, when cutting 0-15% and 85-100% that feeding length is silicon rod diameter,
Loop line amount is 500~800m/min, and feed speed is 0.6~1.2mm/min, and it is 850~950m/min that the first new line, which runs line amount,
And constantly adjusting the first new line to run line amount is that the second new line runs line amount, is specifically adjusted according to above-mentioned formula 3.When cutting feeding length
When degree is the 15-85% of silicon rod diameter, loop line amount is 500~800m/min, and it is 850~950m/min that new line, which runs line amount, constantly
Adjustment feed speed is carried out according to above-mentioned formula 4.
According to a particular embodiment of the invention, the feed speed or new line that cutting is set in cutting process run the adjustment of line amount
At least 45 stages.Specifically, during the entire process of cutting or in the 15-85% mistake that cutting feeding length is silicon rod diameter
Cheng Zhong, the feed speed or new line that cutting is set in cutting process run line amount adjustment at least 45 stages.It is possible thereby to guarantee
Steel wire ensure that cutting silicon wafer TTV stablizes in each stage uniform force of cutting area.
According to a particular embodiment of the invention, during carrying out above-mentioned cutting process, so that the tension of diamond wire is steady
It is scheduled within the scope of 20~35N, the linear velocity of the cutting process is 700~1500m/min.
Embodiment 1
(1) mortar cutting is carried out to silicon rod, the feed speed of cutting is adjusted during to silicon rod progress cutting process,
Wherein:
During carrying out cutting process, loop line amount is set as 500m/min, it is 850m/min that new line, which runs line amount, and described
New line runs line amount and the loop line runs 5% of difference greater than the loop line amount of line amount, and setting feed speed is carried out according to formula 1:
Vx is the feed speed at cutting position x,
R is the radius of silicon crystal bar,
X is the feeding length in cut direction,
Vc is the feed speed Vc=0.6mm/min in cutting position x=R.
(2) it evaluates: TTV (total thickness deviation) being measured to the above method, utilizes standard GB/T 29507-2013 silicon wafer
Flatness, thickness and total thickness variations test automatic non-contact scanning method.The result of measurement is shown in Fig. 2.
Embodiment 2
(1) mortar cutting carrying out to silicon rod, adjustment new line runs line amount during carrying out cutting process to silicon rod,
In:
Before starting to carry out cutting process, loop line amount is set as 600m/min, feed speed Vc=0.8mm/min；
After starting the cutting process, the loop line amount and the feed speed are remained unchanged, and adjustment new line runs line amount
It is carried out according to formula 2:
Wx is that the new line at cutting position x runs line amount,
R is the radius of silicon crystal bar,
X is the feeding length in cut direction,
Wc is the new line line amount in cutting position x=R, Wc=900m/min.
Wherein, as Wx < loop line amount * 1.05, Wx=loop line amount * 1.05 is set at this time.
(2) it evaluates: TTV (total thickness deviation) being measured to the above method, utilizes standard GB/T 29507-2013 silicon wafer
Flatness, thickness and total thickness variations test automatic non-contact scanning method.The result of measurement is shown in Fig. 2.
Embodiment 3
(1) diamond wire saw carrying out to silicon rod, adjustment new line runs line amount during carrying out cutting process to silicon rod,
Wherein:
Before starting to carry out the cutting process, loop line amount is set as 780m/min, it is 890m/ that the first new line, which runs line amount,
Min, feed speed 0.9mm/min；
After starting the cutting process, the loop line amount and the feed speed are remained unchanged, and it is new to adjust described first
It is that the second new line runs line amount that line, which runs line amount, and second new line is run line amount and carried out according to formula 3:
R is the radius of silicon crystal bar,
X is the feeding length in cut direction.
(2) it evaluates: TTV (total thickness deviation) being measured to the above method, utilizes standard GB/T 29507-2013 silicon wafer
Flatness, thickness and total thickness variations test automatic non-contact scanning method.The result of measurement is shown in Fig. 3.
Embodiment 4
(1) diamond wire saw is carried out to silicon rod, is adjusted during carrying out cutting process to silicon rod, in which:
During carrying out the cutting process, loop line amount is set as 650m/min, it is 910m/min that new line, which runs line amount, if
Determine feed speed to carry out according to formula 4:
Vx is the feed speed at cutting position x,
R is the radius of silicon crystal bar,
X is the feeding length in cut direction,
Vc is the feed speed in cutting position x=R, Vc=0.7mm/min.
(2) it evaluates: TTV (total thickness deviation) being measured to the above method, utilizes standard GB/T 29507-2013 silicon wafer
Flatness, thickness and total thickness variations test automatic non-contact scanning method.The result of measurement is shown in Fig. 3.
Embodiment 5
(1) diamond wire saw processing is carried out to silicon rod, as the 0-15% and 85- that cutting feeding length is silicon rod diameter
When 100%, loop line amount is 750m/min, and feed speed 0.6mm/min, it is 880m/min that the first new line, which runs line amount, and constantly
Adjusting the first new line and running line amount is that the second new line runs line amount, is specifically adjusted according to formula 3:
R is the radius of silicon crystal bar,
X is the feeding length in cut direction.
When cutting the 15-85% that feeding length is silicon rod diameter, the first loop line amount is 750m/min, and the first new line runs line
Amount is 880m/min, and setting feed speed is carried out according to formula 4:
Vx is the feed speed at cutting position x,
R is the radius of silicon crystal bar,
X is the feeding length in cut direction,
Vc is the feed speed in cutting position x=R, Vc=0.7mm/min.
(2) it evaluates: TTV (total thickness deviation) being measured to the above method, utilizes standard GB/T 29507-2013 silicon wafer
Flatness, thickness and total thickness variations test automatic non-contact scanning method.Measurement result is shown in Fig. 3.
Comparative example 1
Mortar cutting is carried out to silicon rod, in the feed speed for carrying out adjusting cutting during cutting process to silicon rod, if
Determining loop line amount is 540m/min, and it is 880m/min, feed speed 0.7mm/min that new line, which runs line amount,.
Evaluation: being measured TTV (total thickness deviation) to the above method, flat using standard GB/T 29507-2013 silicon wafer
Whole degree, thickness and total thickness variations test automatic non-contact scanning method.Measurement result is shown in Fig. 2.
Conclusion: as shown in Fig. 2, the mortar cutting method using embodiment 1-2 and the mortar cutting method using comparative example 1
TTV value can be significantly reduced.It further relates to enable in cutting process not only using the mortar cutting method of embodiment 1-2
There is identical cutting power, and can be further ensured that the stability of cutting, improves processing performance, it is particularly possible to reduce silicon wafer
TTV value.
Comparative example 2
Diamond wire saw is carried out to silicon rod, in the feeding speed for carrying out adjusting cutting during cutting process to silicon rod
Degree sets loop line amount as 560m/min, and it is 910m/min, feed speed 1.1mm/min that new line, which runs line amount,.
Evaluation: being measured TTV (total thickness deviation) to the above method, flat using standard GB/T 29507-2013 silicon wafer
Whole degree, thickness and total thickness variations test automatic non-contact scanning method.Measurement result is shown in Fig. 3.
Conclusion: as shown in figure 3, the mortar cutting method using embodiment 3-5 and the diamond wire saw using comparative example 2
TTV value can be significantly reduced in method.It further relates to guarantee that steel wire is being cut using the diamond wire saw method of embodiment 3-5
Each stage uniform force of face product guarantees the stabilization of cutting so that maintaining identical cutting power in cutting process
Property, improve processing performance, it is particularly possible to reduce the TTV value of silicon wafer.
In the description of this specification, reference term " one embodiment ", " some embodiments ", " example ", " specifically show
The description of example " or " some examples " etc. means specific features, structure, material or spy described in conjunction with this embodiment or example
Point is included at least one embodiment or example of the invention.In the present specification, schematic expression of the above terms are not
It must be directed to identical embodiment or example.Moreover, particular features, structures, materials, or characteristics described can be any
It can be combined in any suitable manner in a or multiple embodiment or examples.In addition, without conflicting with each other, the technology of this field
The feature of different embodiments or examples described in this specification and different embodiments or examples can be combined by personnel
And combination.
Although the embodiments of the present invention has been shown and described above, it is to be understood that above-described embodiment is example
Property, it is not considered as limiting the invention, those skilled in the art within the scope of the invention can be to above-mentioned
Embodiment is changed, modifies, replacement and variant.
Claims (10)
1. a kind of method of cutting silicon rod characterized by comprising
Silicon rod is subjected to sticky stick processing；
By on the silicon rod after bonding on board and being fixed；
To silicon rod carry out cutting process, in cutting process crystal section different location adjustment new line run line amount and/or into
To speed.
2. the method according to claim 1, wherein the method is that mortar cutting method or diamond wire are cut
Segmentation method.
3. according to the method described in claim 2, it is characterized in that, the method be mortar cutting method, carried out to silicon rod
The feed speed of cutting is adjusted during cutting process, in which:
During carrying out the cutting process, loop line amount is set as 500~800m/min, it is 850~950m/ that new line, which runs line amount,
Min, and the new line runs line amount and the loop line runs 5% of difference greater than the loop line amount of line amount, setting feed speed is pressed
Illuminated 1 carries out:
Vx is the feed speed at cutting position x,
R is the radius of silicon crystal bar,
X is the feeding length in cut direction,
Vc is the feed speed in cutting position x=R, Vc=0.6~1.2mm/min.
4. according to the method described in claim 2, it is characterized in that, the method be mortar cutting method, carried out to silicon rod
New line is adjusted during cutting process runs line amount, in which:
Before starting to carry out the cutting process, loop line amount is set as 500~800m/min, feed speed Vc=0.6~
1.2mm/min；
After starting the cutting process, the loop line amount and the feed speed are remained unchanged, and are adjusted the new line and are run line amount
It is carried out according to formula 2:
Wx is that the new line at cutting position x runs line amount,
R is the radius of silicon crystal bar,
X is the feeding length in cut direction,
Wc is that the new line in cutting position x=R runs line amount, Wc=850~950m/min；
Wherein, as Wx < loop line amount * 1.05, Wx=loop line amount * 1.05 is set at this time.
5. according to the method described in claim 2, it is characterized in that, the method is diamond wire saw method, to silicon rod
During carrying out cutting process, when cutting 0-15% and 85-100% that feeding length is silicon rod diameter, adjustment new line runs line
Amount；And/or
The feed speed of adjustment cutting when cutting the 15-85% that feeding length is silicon rod diameter.
6. method according to claim 2 or 5, which is characterized in that the method is diamond wire saw method, and adjustment is new
Line runs line amount and carries out according to the following steps:
Before starting to carry out the cutting process, set loop line amount as 500~800m/min, the first new line run line amount be 850~
950m/min, feed speed are 0.6~1.2mm/min；
After starting the cutting process, the loop line amount and the feed speed are remained unchanged, and are adjusted first new line and are run
Line amount is that the second new line runs line amount, and second new line is run line amount and carried out according to formula 3:
R is the radius of silicon crystal bar,
X is the feeding length in cut direction.
7. according to the method described in claim 6, it is characterized in that, the method is diamond wire saw method, feed speed
For 0.6mm/min.
8. method according to claim 2 or 5, which is characterized in that the method be diamond wire saw method, adjust into
It is carried out to speed according to the following steps:
During carrying out the cutting process, loop line amount is set as 500~800m/min, it is 850~950m/ that new line, which runs line amount,
Min, setting feed speed are carried out according to formula 4:
Vx is the feed speed at cutting position x,
R is the radius of silicon crystal bar,
X is the feeding length in cut direction,
Vc is the feed speed in cutting position x=R, Vc=0.6~1.2mm/min.
9. the method according to any one of claim 2,5-8, which is characterized in that the method is diamond wire saw side
Method, the cutting process use water, are water base as cutting fluid.
10. the method according to claim 1, wherein setting the feed speed or new of cutting in cutting process
Line runs line amount and adjusts at least 45 stages.
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| US17/279,600 US20220134600A1 (en) | 2019-07-24 | 2020-07-24 | Method for cutting silicon rod and apparatus for dimaond multi-wire cutting |
| PCT/CN2020/104070 WO2021013238A1 (en) | 2019-07-24 | 2020-07-24 | Method for cutting silicon rod and diamond multi-wire cutting device |
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| WO2021013238A1 (en) * | 2019-07-24 | 2021-01-28 | 徐州鑫晶半导体科技有限公司 | Method for cutting silicon rod and diamond multi-wire cutting device |
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