CN108987459A - A kind of power device - Google Patents
A kind of power device Download PDFInfo
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- CN108987459A CN108987459A CN201810823511.1A CN201810823511A CN108987459A CN 108987459 A CN108987459 A CN 108987459A CN 201810823511 A CN201810823511 A CN 201810823511A CN 108987459 A CN108987459 A CN 108987459A
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- 238000002347 injection Methods 0.000 claims abstract description 100
- 239000007924 injection Substances 0.000 claims abstract description 100
- 238000007514 turning Methods 0.000 claims abstract description 36
- 230000002093 peripheral effect Effects 0.000 claims abstract description 5
- 150000002500 ions Chemical class 0.000 claims description 13
- -1 boron ion Chemical class 0.000 claims description 4
- 229910052796 boron Inorganic materials 0.000 claims description 2
- 238000002513 implantation Methods 0.000 claims description 2
- 230000005684 electric field Effects 0.000 description 13
- 230000015556 catabolic process Effects 0.000 description 10
- 230000001413 cellular effect Effects 0.000 description 5
- 230000004048 modification Effects 0.000 description 5
- 238000012986 modification Methods 0.000 description 5
- 239000002699 waste material Substances 0.000 description 5
- 239000000463 material Substances 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 125000004122 cyclic group Chemical group 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000000407 epitaxy Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229920002120 photoresistant polymer Polymers 0.000 description 2
- 239000000243 solution Substances 0.000 description 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
- H01L29/063—Reduced surface field [RESURF] pn-junction structures
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Thyristors (AREA)
Abstract
The present invention relates to a kind of power devices, including active area, divide area and cut-off ring region, the partial pressure area includes the potential dividing ring of at least one the first conduction type, the cut-off ring region is set to the potential dividing ring periphery, the potential dividing ring has at least one turning, the cut-off ring region has and at least one one-to-one outer turning of the turning of the potential dividing ring, super-junction structure is formed in the cut-off ring region, the super-junction structure includes the first injection region of the first conduction type and the second injection region of the second conduction type, first injection region extends to the corresponding turning of the cut-off ring region from the peripheral turning of the potential dividing ring, second injection region includes first part and second part, the first part is respectively formed in the two sides of first injection region with second part and connect with first injection region, described first One end of injection region and the second injection region collectively covers the corner region of first potential dividing ring.
Description
Technical field
The present invention relates to technical field of semiconductors, specifically a kind of power device.
Background technique
Power device in practical applications, under reverse biased, undertakes voltage mainly by potential dividing ring, due to potential dividing ring
For cyclic structure, the practical strongest place of electric field is located at the corner of potential dividing ring.Therefore, device potential dividing ring is dividing in design
Biggish radius of curvature would generally be arranged in pressure ring corner location, to obtain preferable electric field curvature, reduce breakdown electric field, thus
Improve the breakdown voltage of device entirety, the ratio of but bigger radius of curvature, chip area shared by potential dividing ring is bigger, especially pair
For right angle dicing lane, the waste of corner's area is with regard to inevitable.
Summary of the invention
The embodiment of the invention provides a kind of power device, including active area, partial pressure area and cut-off ring region, the partial pressures
Area is set to the periphery of the active area, and the cut-off ring region is set to the periphery in the partial pressure area, and the partial pressure area includes extremely
The potential dividing ring of few first conduction type, the cut-off ring region are set to the potential dividing ring periphery, and the potential dividing ring has extremely
A few turning, the cut-off ring region have at least one one-to-one outer turning of the turning of the potential dividing ring, described section
Super-junction structure is only formed in ring region, the super-junction structure includes the first injection region and the second conductive-type of the first conduction type
Second injection region of type, first injection region extend to that the cut-off ring region is corresponding to turn from the peripheral turning of the potential dividing ring
Angle, second injection region include first part and second part, and the first part is respectively formed in institute with second part
It states the two sides of the first injection region and is connect with first injection region, first injection region, the first part and described
One end of two parts collectively covers the corner region of first potential dividing ring, first injection region, the first part and institute
The other end for stating second part extends to the corresponding outer turning of the cut-off ring region.
It is appreciated that the present invention introduces the super-junction structure by the corner in the potential dividing ring, to undertake corner
Stronger electric field may be implemented to improve the reverse withstand voltage of device while reducing partial pressure radius of curvature of the ring, make the pressure resistance of device
It not will receive the influence of potential dividing ring radius of curvature reduction, and then avoid device in the waste of potential dividing ring corner area, into one
The raising device active region of step accounts for the ratio of chip area, to improve the breakdown voltage of device entirety.
Detailed description of the invention
In order to illustrate the technical solution of the embodiments of the present invention more clearly, below to needed in embodiment description
Attached drawing is briefly described, it should be apparent that, drawings in the following description are some embodiments of the invention, general for this field
For logical technical staff, without creative efforts, it is also possible to obtain other drawings based on these drawings.
It constitutes a part of attached drawing of the invention to be used to provide further understanding of the present invention, schematic implementation of the invention
Example and its specification are used to explain the present invention, and do not constitute the improper restriction to not allowing you to invent.
Fig. 1 is the regional area schematic diagram for the power device that the embodiment of the present invention proposes；
Fig. 2 is the top view of the power device proposed；
Fig. 3 is the schematic diagram of the section structure of the power device proposed；
Description of symbols: 1, active area；2, area is divided；21, potential dividing ring；3, end ring region；4, dicing lane area；5, first
Injection region；6, the second injection region；61, first part；62, second part.
Specific embodiment
It is clear in order to be more clear the purpose of the present invention, technical solution and advantageous effects, below in conjunction with this hair
Attached drawing in bright embodiment, technical scheme in the embodiment of the invention is clearly and completely described, it is clear that described
Embodiment is only a part of the embodiment of the present invention, instead of all the embodiments.Based on the embodiments of the present invention, this field
Those of ordinary skill's every other embodiment obtained without making creative work, belongs to protection of the present invention
Range.
It should be noted that in the absence of conflict, the feature in embodiment and embodiment in the present invention can phase
Mutually combination.
In the description of the present invention, it is to be understood that, term " center ", " longitudinal direction ", " transverse direction ", "upper", "lower",
The orientation or positional relationship of the instructions such as "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outside" is
It is based on the orientation or positional relationship shown in the drawings, is merely for convenience of description of the present invention and simplification of the description, rather than instruction or dark
Show that signified device or element must have a particular orientation, be constructed and operated in a specific orientation, therefore should not be understood as pair
Limitation of the invention.In addition, term " first ", " second " etc. are used for description purposes only, it is not understood to indicate or imply phase
To importance or implicitly indicate the quantity of indicated technical characteristic.The feature for defining " first ", " second " etc. as a result, can
To explicitly or implicitly include one or more of the features.In the description of the present invention, unless otherwise indicated, " multiple "
It is meant that two or more.
In the description of the present invention, it should be noted that unless otherwise clearly defined and limited, term " installation ", " phase
Even ", " connection " shall be understood in a broad sense, for example, it may be being fixedly connected, may be a detachable connection, or be integrally connected；It can
To be mechanical connection, it is also possible to be electrically connected；It can be directly connected, can also can be indirectly connected through an intermediary
Connection inside two elements.For the ordinary skill in the art, above-mentioned term can be understood by concrete condition
Concrete meaning in the present invention.
Special to illustrate herein for convenience of subsequent description: first conduction type can be N-type, then, described second leads
Electric type is p-type, conversely, first conduction type may be p-type, correspondingly, second conduction type is N-type.?
In next embodiment, retouched so that first conduction type is p-type and second conduction type is N-type as an example
It states, but is defined not to this.
Referring to Fig. 1, a kind of power device, including active area 1, partial pressure area 2 and cut-off ring region 3, the partial pressure area 2 is set
It is placed in the periphery of the active area 1, the cut-off ring region 3 is set to the periphery in the partial pressure area 2, and the partial pressure area 2 includes extremely
The potential dividing ring 21 of few first conduction type, the cut-off ring region 3 are set to 21 periphery of potential dividing ring, the potential dividing ring 21
With at least one turning, the cut-off ring region 3 has to turn with outside the turning of the potential dividing ring 21 correspondingly at least one
Angle, is formed with super-junction structure in the cut-off ring region 3, the super-junction structure include the first injection region 5 of the first conduction type with
And second conduction type the second injection region 6, the peripheral turning of first injection region 5 from the potential dividing ring 2 extends to described
End the corresponding turning of ring region 3, second injection region 6 includes first part 61 and second part 62, the first part
61 are respectively formed in the two sides of first injection region 5 with second part 62 and connect with first injection region 5, described first
One end of injection region 5 and the second injection region 6 collectively covers the corner region of the potential dividing ring 21, first injection region 5 and
The other end of two injection regions 6 extends to the corresponding outer turning of the cut-off ring region 3.
It is appreciated that the present invention introduces the super-junction structure by the corner in the potential dividing ring 21, to undertake turning
Locate stronger electric field, may be implemented to improve the reverse withstand voltage of device while reducing by 21 radius of curvature of potential dividing ring, make device
Pressure resistance not will receive the influence of 21 radius of curvature of potential dividing ring reduction, and then avoid device in the wave of 21 corner's area of potential dividing ring
Take, further device active region 1 of improving accounts for the ratio of chip area, to improve the breakdown voltage of device entirety.
The active area 1 is that semiconductor silicon on piece does the region of active device, and the active area 1 is mainly for MOS
For (metal-oxide-semiconductor, Metal-oxide-semicondutor), difference doping can form the active of N or p-type
Area 1.It is understood that the voltage endurance capability of power device depends primarily on the reverse-biased breakdown potential of specific PN junction in device architecture
Pressure, certain current capacity, is usually composed in parallel by many cellulars in order to obtain, in device reverse withstand voltage, due to cellular
Transverse electric field between cellular is cancelled out each other, because breakdown does not occur inside cellular generally, but outmost cellular
It can puncture since electric field is concentrated.Therefore specific structure is just needed to reduce electric field to improving breakdown voltage, these
Special construction is terminal structure.
Please refer to figs. 2 and 3, and the terminal structure includes positioned at the partial pressure area 2 of the periphery of the active area 1 and by institute
The cut-off ring region 3 of 3 periphery of partial pressure area is stated, 3 periphery of cut-off ring region is additionally provided with dicing lane area 4, wherein the active area 1,
The partial pressure area 3 and the cut-off ring region 3 form the chip region of device, and the dicing lane area 4 is for separating multiple chip regions.Institute
The potential dividing ring 21 that partial pressure area includes at least one the first conduction type is stated, at least one described potential dividing ring 21 is from the active area 1
Periphery to the cut-off ring region 3 is alternatively arranged, in some embodiments of the invention, described active by taking N-type power device as an example
Area 1, partial pressure area 3 and the cut-off ring region 3 are both formed in N-type epitaxy layer, and the potential dividing ring 21 is to be formed in the epitaxial layer
Heavily doped P-type column annular in shape in surface region, if the potential dividing ring 21 be it is multiple, the super-junction structure is set to described
Between the corner of outermost potential dividing ring 21 and the interior corner of the cut-off ring region 3, then first injection region 5, described
One end of first part 61 and the second part 62 collectively covers the corner region of outermost potential dividing ring 21, described outermost
Potential dividing ring 21 is the potential dividing ring 22 farthest away from the active area 1.More specifically, the width of the p-type column and depth can be identical
Can be different, i.e., the depth with the p-type column is different, situation and of same size, the different situation of depth of same size,
And depth is identical, also identical situation and depth are different for width, and width yet different situation does not do excessive limit herein
It is fixed.
In certain embodiments of the present invention, the potential dividing ring 21 tool is there are four turning, the cut-off ring region 3 with
The one-to-one four outer turnings in the turning of the potential dividing ring 21, it is to be understood that the outer turning of the cut-off ring region 3 is
The turning at the interior turning that the dicing lane is gone, the potential dividing ring 21 is quarter circular arc, 21 corner of potential dividing ring
Radius of curvature is between 20-30um, and the outer turning of the cut-off ring region 3 is also quarter circular arc, outside the cut-off ring region 3
The curvature of corner is equal with the turning curvature of the potential dividing ring 21.It is appreciated that in practical applications, when device is in reversed
It under bias, is undertaken mainly by the potential dividing ring 21 and carrys out voltage, since the potential dividing ring 21 is cyclic structure, practical electric field is strongest
Place is the corner location of potential dividing ring 21, therefore biggish radius of curvature is only arranged in the corner of the potential dividing ring 21, just may be used
To obtain preferable electric field curvature, breakdown electric field is reduced, to improve the breakdown voltage of device entirety, but bigger curvature half
The ratio of diameter, chip area shared by potential dividing ring 21 is bigger, for right angle dicing lane area 4, will result in described point
The waste of the area of 21 corner of pressure ring, therefore, the application are avoided by reducing the radius of curvature of the potential dividing ring 21
The waste of corner's area, and then realize under same device area, the saturation current of chip is bigger, and conducting resistance is lower.
Also referring to Fig. 1, Fig. 2 and Fig. 3, further, the super-junction structure includes the first note of the first conduction type
Enter the second injection region 6 of area 5 and the second conduction type, the peripheral turning of first injection region 5 from the potential dividing ring 21 is prolonged
The corresponding turning of the cut-off ring region 3 is extended to, second injection region 6 includes first part 61 and second part 62, described
First part 61 is respectively formed in the two sides of first injection region 5 with second part 62 and connect with first injection region 5,
One end of first injection region 5 and the second injection region 6 collectively covers the corner region of the potential dividing ring 21, first injection
The other end of area 5 and the second injection region 6 extends to the corresponding outer turning of the cut-off ring region 3, i.e., described first injection region 5
And second the other end interior turning corresponding with the dicing lane area 4 of injection region 6 abut.
It is appreciated that the super-junction structure is introduced by the corner in the potential dividing ring 21, it is stronger to undertake corner
Electric field, may be implemented to improve the reverse withstand voltage of device while reducing by 21 radius of curvature of potential dividing ring, make device pressure resistance not
It will receive the influence of 21 radius of curvature of potential dividing ring reduction, and then avoid device in the waste of 21 corner's area of potential dividing ring, into
The raising device active region 1 of one step accounts for the ratio of chip area, to improve the breakdown voltage of device entirety.
In certain embodiments of the present invention, the doping concentration of first injection region 5 is in 4E15-1E16/cm3It
Between, the ion that first injection region 5 is formed by ion implanting twice, and injected twice is boron ion, in other implementations
In example, the ion of injection can also be other trivalent ions such as indium or gallium.More specifically, exposure mask material is done by using photoresist
Material forms injection window in N-type epitaxy layer, forms first injection region 5 by ion implantation technology twice, wherein the
The concentration once injected is 1E15-5E15/cm3Between, the concentration of second of injection is 5E15-6E15/cm3Between.It needs to know
, in the present embodiment, the first time injection can inject realization together with the potential dividing ring 21, and second of injection can
Realization is injected together with the subsequent injection region P+ of device, therefore, without under the premise of increasing process costs, so that it may just form institute
The first injection region 5 is stated, the control to cost of manufacture is conducive to.
In certain embodiments of the present invention, the doping concentration of second injection region 6 is in 4E15-6E15/cm3It
Between, second injection region 6 is injected to be formed by primary ions, and injection ion is phosphonium ion, in other embodiments, injection
Ion can also be other pentavalent ions such as arsenic or antimony.More specifically, mask material is done by using photoresist, in N-type extension
Injection window is formed in layer, the Doped ions implantation concentration is 4E15-5E15/cm3Between.It is understood that in this reality
It applies in mode, therefore second injection region 6 can be not necessarily to increase process costs with the co-implanted formation of source electrode of device
Under the premise of, so that it may second injection region 6 is just formed, the control to cost of manufacture is conducive to.
Further, in some embodiments of the invention, the junction depth of first injection region 5 and doping concentration are higher than
Second injection region 6, but the area of 5 knot of the first injection region is less than the gross area of second injection region 6, i.e., described the
One injection region 5 is less than second injection region 6 along any area of section being parallel on the direction of the power device upper surface and exists
The sum of area on same profile.In this way, when the power device undertakes reverse withstand voltage, first injection region 5 and described
Second injection region 6 can all exhaust, and form electric field in the corner of the potential dividing ring 21 near the cut-off ring region 3 and stop
Area, and then improve the reverse withstand voltage of device.
Further, it is all exhausted to further realize, it is preferred that the first part 61 is far from first injection
Side of the side in area 5 with the second part 62 far from first injection region 5 is vertical.
Further, first injection region 5 respectively with the first part 61 of second injection region 6 and second part 62
The distance between adjacent two sides are between 5-10um.More specifically, first injection region 5 is injected with described second respectively
The first part 61 in area 6 and adjacent the distance between the two sides of second part 62 can be fixed, i.e., and described first
Adjacent with the first part 61 of second injection region 6 and second part 62 two sides are substantially parallel respectively for injection region 5, certainly
First injection region 5 two sides adjacent with the first part 61 of second injection region 6 and second part 62 respectively
Be also possible to it is unfixed, i.e., between the described two sides distance can since at the potential dividing ring 21 become larger, can also be with
Gradually become smaller etc..In some embodiments of the invention, first injection region 5 respectively with second injection region 6
The distance between a part 61 and the adjacent two sides of second part 62 are substantially parallel.The first part of second injection region 6
61 may be the same or different along any area of section being parallel on the direction of the power device upper surface, not do herein
The width of excessive restriction, first injection region 5 and second injection region 6 is between 10-15um.
Although preferred embodiments of the present invention have been described, it is created once a person skilled in the art knows basic
Property concept, then additional changes and modifications may be made to these embodiments.So it includes excellent that the following claims are intended to be interpreted as
It selects embodiment and falls into all change and modification of the scope of the invention.
Obviously, various changes and modifications can be made to the invention without departing from essence of the invention by those skilled in the art
Mind and range.In this way, if these modifications and changes of the present invention belongs to the range of the claims in the present invention and its equivalent technologies
Within, then the present invention is also intended to include these modifications and variations.
Claims (10)
1. a kind of power device, which is characterized in that including active area, partial pressure area and cut-off ring region, the partial pressure area is set to
The periphery of the active area, the cut-off ring region are set to the periphery in the partial pressure area, the partial pressure area include at least one the
The potential dividing ring of one conduction type, the cut-off ring region are set to the potential dividing ring periphery, and the potential dividing ring is turned at least one
Angle, the cut-off ring region have at least one one-to-one outer turning of the turning of the potential dividing ring, in the cut-off ring region
Be formed with super-junction structure, the super-junction structure include the first conduction type the first injection region and the second conduction type second
Injection region, first injection region extends to the corresponding turning of the cut-off ring region from the peripheral turning of the potential dividing ring, described
Second injection region includes first part and second part, and the first part is respectively formed in first note with second part
Enter the two sides in area and is connect with first injection region, first injection region, the first part and the second part
One end collectively covers the corner region of first potential dividing ring, first injection region, the first part and second described
The other end divided extends to the corresponding outer turning of the cut-off ring region.
2. power device according to claim 1, which is characterized in that the first injection region edge is parallel to the power device
Any area of section on the direction of part upper surface is less than area the sum of of second injection region on same profile.
3. power device according to claim 1, which is characterized in that the turning of each potential dividing ring is a quarter
Circular arc, the radius of curvature of first potential dividing ring corner is between 20-30um.
4. power device according to claim 3, which is characterized in that the outer turning of each cut-off ring region is four points
One of circular arc, the curvature of the outer corner of the cut-off ring region it is equal with the turning curvature of the potential dividing ring.
5. power device according to claim 1, which is characterized in that the doping concentration of first injection region is in 4E15-
1E16/cm3Between, the doping concentration of second injection region is in 4E15-6E15/cm3Between.
6. power device according to claim 5, which is characterized in that first injection region passes through ion implanting shape twice
At, and the ion injected twice is boron ion, wherein the concentration of injection is 1E15-5E15/cm for the first time3Between, second
The concentration of injection is 5E15-6E15/cm3Between.
7. power device according to claim 5, which is characterized in that shape is injected by primary ions in second injection region
At injection ion is phosphonium ion, implantation concentration 4E15-5E15/cm3Between.
8. power device according to claim 1, which is characterized in that first injection region is injected with described second respectively
The distance between the first part in area and the adjacent two sides of second part are between 5-10um.
9. power device according to claim 1, which is characterized in that the first part is far from first injection region
Side of the side with the second part far from first injection region is vertical.
10. power device according to claim 3, which is characterized in that the junction depth of first injection region is higher than described the
Two injection regions.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201810823511.1A CN108987459B (en) | 2018-07-25 | 2018-07-25 | A kind of power device |
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| CN201810823511.1A CN108987459B (en) | 2018-07-25 | 2018-07-25 | A kind of power device |
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| CN108987459B CN108987459B (en) | 2019-08-30 |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110911475A (en) * | 2019-10-30 | 2020-03-24 | 深圳深爱半导体股份有限公司 | Transistor terminal structure and manufacturing method thereof |
| CN115440796A (en) * | 2022-10-24 | 2022-12-06 | 上海功成半导体科技有限公司 | Super junction device terminal protection layout structure |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102569357A (en) * | 2010-12-28 | 2012-07-11 | 瑞萨电子株式会社 | Semiconductor device |
| CN102694027A (en) * | 2012-01-13 | 2012-09-26 | 西安龙腾新能源科技发展有限公司 | Non-equilibrium junction terminal structure for super-junction device |
| CN202839620U (en) * | 2012-02-29 | 2013-03-27 | 比亚迪股份有限公司 | Super junction metal oxide semiconductor field effect transistor (MOSFET) component |
| CN104332489A (en) * | 2014-10-23 | 2015-02-04 | 吉林华微电子股份有限公司 | Terminal with surface super-structure and of semiconductor device |
| US20160035880A1 (en) * | 2011-08-12 | 2016-02-04 | Renesas Electronics Corporation | Power mosfet, an igbt, and a power diode |
-
2018
- 2018-07-25 CN CN201810823511.1A patent/CN108987459B/en active Active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102569357A (en) * | 2010-12-28 | 2012-07-11 | 瑞萨电子株式会社 | Semiconductor device |
| US20140312418A1 (en) * | 2010-12-28 | 2014-10-23 | Renesas Electronics Corporation | Semiconductor device |
| US20160035880A1 (en) * | 2011-08-12 | 2016-02-04 | Renesas Electronics Corporation | Power mosfet, an igbt, and a power diode |
| CN102694027A (en) * | 2012-01-13 | 2012-09-26 | 西安龙腾新能源科技发展有限公司 | Non-equilibrium junction terminal structure for super-junction device |
| CN202839620U (en) * | 2012-02-29 | 2013-03-27 | 比亚迪股份有限公司 | Super junction metal oxide semiconductor field effect transistor (MOSFET) component |
| CN104332489A (en) * | 2014-10-23 | 2015-02-04 | 吉林华微电子股份有限公司 | Terminal with surface super-structure and of semiconductor device |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN110911475A (en) * | 2019-10-30 | 2020-03-24 | 深圳深爱半导体股份有限公司 | Transistor terminal structure and manufacturing method thereof |
| CN115440796A (en) * | 2022-10-24 | 2022-12-06 | 上海功成半导体科技有限公司 | Super junction device terminal protection layout structure |
| CN115440796B (en) * | 2022-10-24 | 2023-08-15 | 上海功成半导体科技有限公司 | Territory structure for protecting super junction device terminal |
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