CN108975934B - 石墨坩埚及其制造方法 - Google Patents
石墨坩埚及其制造方法 Download PDFInfo
- Publication number
- CN108975934B CN108975934B CN201710412082.4A CN201710412082A CN108975934B CN 108975934 B CN108975934 B CN 108975934B CN 201710412082 A CN201710412082 A CN 201710412082A CN 108975934 B CN108975934 B CN 108975934B
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- CN
- China
- Prior art keywords
- silicon nitride
- nitride fiber
- crucible
- graphite crucible
- graphite
- Prior art date
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- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title claims abstract description 88
- 229910002804 graphite Inorganic materials 0.000 title claims abstract description 85
- 239000010439 graphite Substances 0.000 title claims abstract description 85
- 238000000034 method Methods 0.000 title claims abstract description 27
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 26
- 239000000835 fiber Substances 0.000 claims abstract description 153
- 229910052581 Si3N4 Inorganic materials 0.000 claims abstract description 143
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims abstract description 143
- 239000011230 binding agent Substances 0.000 claims abstract description 26
- 239000002994 raw material Substances 0.000 claims abstract description 17
- 239000011248 coating agent Substances 0.000 claims abstract description 10
- 238000000576 coating method Methods 0.000 claims abstract description 10
- 238000000578 dry spinning Methods 0.000 claims abstract description 9
- 238000000926 separation method Methods 0.000 claims abstract description 4
- 238000010000 carbonizing Methods 0.000 claims abstract description 3
- 238000009987 spinning Methods 0.000 claims description 19
- JUJWROOIHBZHMG-UHFFFAOYSA-N Pyridine Chemical compound C1=CC=NC=C1 JUJWROOIHBZHMG-UHFFFAOYSA-N 0.000 claims description 16
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 12
- 239000011347 resin Substances 0.000 claims description 10
- 229920005989 resin Polymers 0.000 claims description 10
- 239000012298 atmosphere Substances 0.000 claims description 9
- UMJSCPRVCHMLSP-UHFFFAOYSA-N pyridine Natural products COC1=CC=CN=C1 UMJSCPRVCHMLSP-UHFFFAOYSA-N 0.000 claims description 8
- 229910003818 SiH2Cl2 Inorganic materials 0.000 claims description 7
- 239000000463 material Substances 0.000 claims description 7
- 238000005915 ammonolysis reaction Methods 0.000 claims description 6
- 238000006116 polymerization reaction Methods 0.000 claims description 6
- 239000000243 solution Substances 0.000 claims description 6
- 239000000203 mixture Substances 0.000 claims description 5
- 239000003960 organic solvent Substances 0.000 claims description 5
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 claims description 4
- 229910021529 ammonia Inorganic materials 0.000 claims description 4
- 238000001914 filtration Methods 0.000 claims description 4
- 239000007770 graphite material Substances 0.000 claims description 4
- 239000008096 xylene Substances 0.000 claims description 4
- 238000000197 pyrolysis Methods 0.000 claims description 3
- 238000005245 sintering Methods 0.000 claims description 3
- 239000011550 stock solution Substances 0.000 claims description 2
- 230000008569 process Effects 0.000 abstract description 8
- 238000001816 cooling Methods 0.000 abstract description 3
- 239000013078 crystal Substances 0.000 description 15
- 239000010453 quartz Substances 0.000 description 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 11
- 239000000155 melt Substances 0.000 description 7
- 230000000694 effects Effects 0.000 description 5
- 239000010410 layer Substances 0.000 description 5
- 239000007788 liquid Substances 0.000 description 5
- 238000004804 winding Methods 0.000 description 4
- 230000007246 mechanism Effects 0.000 description 3
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000004677 Nylon Substances 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 239000004744 fabric Substances 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000012299 nitrogen atmosphere Substances 0.000 description 1
- 229920001778 nylon Polymers 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 230000007480 spreading Effects 0.000 description 1
- 238000003892 spreading Methods 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000008093 supporting effect Effects 0.000 description 1
Images
Classifications
-
- C04B35/806—
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
- C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
- C04B35/52—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on carbon, e.g. graphite
- C04B35/522—Graphite
-
- C—CHEMISTRY; METALLURGY
- C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
- C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
- C04B2235/00—Aspects relating to ceramic starting mixtures or sintered ceramic products
- C04B2235/02—Composition of constituents of the starting material or of secondary phases of the final product
- C04B2235/50—Constituents or additives of the starting mixture chosen for their shape or used because of their shape or their physical appearance
- C04B2235/52—Constituents or additives characterised by their shapes
- C04B2235/5208—Fibers
- C04B2235/5216—Inorganic
- C04B2235/524—Non-oxidic, e.g. borides, carbides, silicides or nitrides
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Materials Engineering (AREA)
- Structural Engineering (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Ceramic Products (AREA)
Abstract
Description
Claims (13)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN201710412082.4A CN108975934B (zh) | 2017-06-02 | 2017-06-02 | 石墨坩埚及其制造方法 |
Applications Claiming Priority (1)
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CN201710412082.4A CN108975934B (zh) | 2017-06-02 | 2017-06-02 | 石墨坩埚及其制造方法 |
Publications (2)
Publication Number | Publication Date |
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CN108975934A CN108975934A (zh) | 2018-12-11 |
CN108975934B true CN108975934B (zh) | 2021-05-07 |
Family
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Family Applications (1)
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CN201710412082.4A Active CN108975934B (zh) | 2017-06-02 | 2017-06-02 | 石墨坩埚及其制造方法 |
Country Status (1)
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CN (1) | CN108975934B (zh) |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN87206316U (zh) * | 1987-04-16 | 1987-12-30 | 清华大学 | 氮化硅涂层坩埚 |
CN1656042A (zh) * | 2002-03-22 | 2005-08-17 | 申克碳化技术股份有限公司 | 复合陶瓷体及其制备方法 |
CN101224989A (zh) * | 2008-01-29 | 2008-07-23 | 中国人民解放军国防科学技术大学 | 二维纤维布增强陶瓷基复合材料及其制备方法 |
CN103102170A (zh) * | 2011-11-11 | 2013-05-15 | 浙江昱辉阳光能源有限公司 | 一种坩埚及其制备方法 |
CN104744047A (zh) * | 2015-03-04 | 2015-07-01 | 烟台同立高科新材料股份有限公司 | 一种反应烧结制备氮化硅坩埚的方法 |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20020166503A1 (en) * | 2001-03-08 | 2002-11-14 | Hitco Carbon Composites, Inc. | Hybrid crucible susceptor |
-
2017
- 2017-06-02 CN CN201710412082.4A patent/CN108975934B/zh active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN87206316U (zh) * | 1987-04-16 | 1987-12-30 | 清华大学 | 氮化硅涂层坩埚 |
CN1656042A (zh) * | 2002-03-22 | 2005-08-17 | 申克碳化技术股份有限公司 | 复合陶瓷体及其制备方法 |
CN101224989A (zh) * | 2008-01-29 | 2008-07-23 | 中国人民解放军国防科学技术大学 | 二维纤维布增强陶瓷基复合材料及其制备方法 |
CN103102170A (zh) * | 2011-11-11 | 2013-05-15 | 浙江昱辉阳光能源有限公司 | 一种坩埚及其制备方法 |
CN104744047A (zh) * | 2015-03-04 | 2015-07-01 | 烟台同立高科新材料股份有限公司 | 一种反应烧结制备氮化硅坩埚的方法 |
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Effective date of registration: 20240617 Address after: 201306 buildings 1-4 and 6-19, No. 1000, Yunshui Road, Lingang New District, China (Shanghai) pilot Free Trade Zone, Pudong New Area, Shanghai Patentee after: ZING SEMICONDUCTOR Corp. Country or region after: China Patentee after: Shanghai Xinsheng Jingrui Semiconductor Technology Co.,Ltd. Address before: 201306 room c1350, building 24, No.2, Xincheng Road, Nicheng Town, Pudong New Area, Shanghai Patentee before: ZING SEMICONDUCTOR Corp. Country or region before: China |