CN108933592A - high-speed level conversion circuit, level conversion method and data transmission device - Google Patents
high-speed level conversion circuit, level conversion method and data transmission device Download PDFInfo
- Publication number
- CN108933592A CN108933592A CN201810657707.8A CN201810657707A CN108933592A CN 108933592 A CN108933592 A CN 108933592A CN 201810657707 A CN201810657707 A CN 201810657707A CN 108933592 A CN108933592 A CN 108933592A
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- Prior art keywords
- field
- effect tube
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- drain electrode
- level conversion
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Classifications
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/0175—Coupling arrangements; Interface arrangements
- H03K19/017509—Interface arrangements
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/0175—Coupling arrangements; Interface arrangements
- H03K19/0185—Coupling arrangements; Interface arrangements using field effect transistors only
- H03K19/018507—Interface arrangements
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
- H03K19/0175—Coupling arrangements; Interface arrangements
- H03K19/0185—Coupling arrangements; Interface arrangements using field effect transistors only
- H03K19/018557—Coupling arrangements; Impedance matching circuits
Abstract
The invention discloses a kind of high-speed level conversion circuit, level conversion method and data transmission devices, are related to technical field of integrated circuits.The circuit includes the first field-effect tube for being connected to input voltage domain power supply, and first field-effect tube is connected with the second field-effect tube, and first field-effect tube and the second field-effect tube are connected with each other to form phase inverter；The phase inverter is also connected with third field-effect tube and the 4th field-effect tube, and the third field-effect tube and the 4th field-effect tube are connected to output voltage domain power supply by the 5th field-effect tube and the 6th field-effect tube；First capacitor and the second capacitor are also connected between the third field-effect tube and the 4th field-effect tube.Technical solution of the present invention, when circuit carries out level conversion, by the coupling of first capacitor and the second capacitor, can reduce the competition between pull-up circuit and pull-down circuit, to improve conversion speed by increasing first capacitor and the second capacitor.
Description
Technical field
The present invention relates to technical field of integrated circuits, more particularly to a kind of high-speed level conversion circuit, level conversion side
Method and data transmission device.
Background technique
With the demand of chip technology, the innovation of technique and low-power chip, new chip supply voltage is lower and lower.When
Inside electrical equipment simultaneously using the different circuit of supply voltage, different power voltage circuit between need mutually to transmit signal
When, it is necessary to it is converted through overvoltage.Level shifting circuit is widely used in various application circuits, which may be implemented logic level
Voltage domain conversion.
But current level shifting circuit conversion speed is generally slow, and due to the competition between upper pull-down circuit,
Cause pull-up circuit area bigger than normal, rate of voltage rise is partially slow.
Summary of the invention
The main purpose of the present invention is to provide the transmission of a kind of high-speed level conversion circuit, level conversion method and data to fill
It sets, it is intended to improve level conversion speed.
To achieve the above object, the present invention provides a kind of high-speed level conversion circuit, and the circuit includes being connected to input
First field-effect tube of voltage domain power supply, first field-effect tube are connected with the second field-effect tube, first field-effect tube
It is connected with each other with the second field-effect tube to form phase inverter；The phase inverter is also connected with third field-effect tube and the 4th field-effect
Pipe, the third field-effect tube and the 4th field-effect tube are connected to output by the 5th field-effect tube and the 6th field-effect tube
Voltage domain power supply；First capacitor and the second capacitor are also connected between the third field-effect tube and the 4th field-effect tube.
Preferably, one end of the first capacitor is connected to the grid of the third field-effect tube, and is also attached to described
The grid of first field-effect tube and second field-effect tube；The other end of the first capacitor is connected to described 4th
The drain electrode of the grid, the 6th field-effect tube of the drain electrode of effect pipe and the 5th field-effect tube.
Preferably, one end of second capacitor is connected to the drain electrode of the third field-effect tube, is also attached to described
The grid of the drain electrode of five field-effect tube and the 6th field-effect tube；The other end of second capacitor is connected to the 4th effect
Should pipe grid, and be also attached to the drain electrode of first field-effect tube and second field-effect tube.
Preferably, the drain and gate of first field-effect tube and second field-effect tube is connected with each other, and the two
Drain electrode be connected to the grid of the 4th field-effect tube, the grid of the two is connected to signal input part, becomes to receive voltage
Change signal；The source electrode of first field-effect tube is connected to input voltage domain power supply, the source electrode of second field-effect tube
Ground connection.
Preferably, the grid of the third field-effect tube is connected to first field-effect tube and the second field-effect tube
Grid, and the grid of the 5th field-effect tube and the drain electrode of the 6th field-effect tube are connected to by the first capacitor；
The drain electrode of the third field-effect tube is connected to drain electrode and the grid of the 6th field-effect tube of the 5th field-effect tube, and
By the second capacitance connection in the grid of the 4th field-effect tube；The source electrode of the third field-effect tube is grounded.
Preferably, the grid of the 4th field-effect tube is connected to first field-effect tube and the second field-effect tube
Drain electrode, and by second capacitance connection in the 5th field-effect tube drain electrode and the 6th field-effect tube grid
Pole；The drain electrode of 4th field-effect tube is connected to grid and the 6th field-effect tube leakage of the 5th field-effect tube
Pole；The source electrode of 4th field-effect tube is grounded.
Preferably, the source electrode of the 5th field-effect tube and the 6th field-effect tube is connected with each other, and is connected to simultaneously
Output voltage domain power supply；The drain electrode of 5th field-effect tube is connected to the grid of the 6th field-effect tube；Described
The grid of five field-effect tube is connected to the drain electrode of the 6th field-effect tube, and is connected to signal output end, to export logic letter
Number.
The present invention also provides a kind of level conversion methods using above-mentioned high-speed level conversion circuit, which comprises
First field-effect tube connects input voltage domain power supply with second field-effect tube；
5th field-effect tube connects output voltage domain power supply with the 6th field-effect tube；
In the grid input signal of first field-effect tube and second field-effect tube；
When input signal is low level, the third field-effect tube receives input signal conducting, and the 4th field-effect tube connects
It receives input signal to close, to export low level voltage；
When input signal is high level, the third field-effect tube receives input signal and closes, and the 4th field-effect tube connects
Input signal conducting is received, with output high level voltage.
The present invention also provides a kind of data transmission devices, including above-mentioned high-speed level conversion circuit.
Technical solution of the present invention forms phase inverter by the first field-effect tube and the second field-effect tube, and increases first capacitor
, by the coupling of first capacitor and the second capacitor, it can reduce pull-up circuit when circuit carries out level conversion with the second capacitor
Competition between pull-down circuit, to improve conversion speed.
Detailed description of the invention
Fig. 1 is the circuit diagram of high-speed level conversion circuit of the present invention；
Fig. 2 is the flow diagram of level conversion method of the present invention.
The embodiments will be further described with reference to the accompanying drawings for the realization, the function and the advantages of the object of the present invention.
Specific embodiment
It should be appreciated that the specific embodiments described herein are merely illustrative of the present invention, it is not intended to limit the present invention.
The following further describes the present invention with reference to the drawings.
A kind of high-speed level conversion circuit, as shown in Figure 1, the circuit includes being connected to input voltage domain power vd D1
First field-effect tube M1, the first field-effect tube M1 is connected with the second field-effect tube M2, the first field-effect tube M1 and
Two field-effect tube M2 are connected with each other to form phase inverter；The phase inverter is also connected with third field-effect tube M3 and the 4th field-effect
Pipe M4, the third field-effect tube M3 and the 4th field-effect tube M4 pass through the 5th field-effect tube M5 and the 6th field-effect tube M6
It is connected to output voltage domain power vd D2；Is also connected between the third field-effect tube M3 and the 4th field-effect tube M4
One capacitor C1 and the second capacitor C2.
Specifically, the voltage of input voltage domain power vd D1 can be more than or less than output voltage domain power vd D2.By
The phase inverter of first field-effect tube M1 and the second field-effect tube M2 composition, for input signal to be carried out phasing back, with input
Into subsequent conditioning circuit.
Technical solution of the present invention forms phase inverter by the first field-effect tube M1 and the second field-effect tube M2, and increases by first
Capacitor C1 and the second capacitor C2, can be with by the coupling of first capacitor C1 and the second capacitor C2 when circuit carries out level conversion
Reduce the pull-up circuit being made of the 5th field-effect tube M5 and the 6th field-effect tube M6 and by third field-effect tube M3 and the 4th
Competition between the pull-down circuit of effect pipe M4 composition, to improve level conversion speed.
Preferably, one end of the first capacitor C1 is connected to the grid of the third field-effect tube M3, and is also attached to
The grid of the first field-effect tube M1 and the second field-effect tube M2；The other end of the first capacitor C1 is connected to
The leakage of the grid, the 6th field-effect tube M6 of the drain electrode and the 5th field-effect tube M5 of the 4th field-effect tube M4
Pole.
Preferably, one end of the second capacitor C2 is connected to the drain electrode of the third field-effect tube M3, is also attached to institute
State the drain electrode of the 5th field-effect tube M5 and the grid of the 6th field-effect tube M6；The other end of the second capacitor C2 is connected to institute
The grid of the 4th field-effect tube M4 is stated, and is also attached to the leakage of the first field-effect tube M1 and the second field-effect tube M2
Pole.
Preferably, the drain and gate of the first field-effect tube M1 and the second field-effect tube M2 is connected with each other, and
The drain electrode of the two is connected to the grid of the 4th field-effect tube M4, and the grid of the two is connected to signal input part in, to connect
Receive voltage change signal；The source electrode of the first field-effect tube M1 is connected to the input voltage domain power vd D1, and described second
The source electrode of field-effect tube M2 is grounded GND.
Preferably, the grid of the third field-effect tube M3 is connected to the first field-effect tube M1 and second effect
Should pipe M2 grid, and be connected to by the first capacitor C1 grid and the 6th field-effect of the 5th field-effect tube M5
The drain electrode of pipe M6；The drain electrode of the third field-effect tube M3 is connected to the drain electrode of the 5th field-effect tube M5 and 6th described
The grid of effect pipe M6, and it is connected to by the second capacitor C2 the grid of the 4th field-effect tube M4；The third field-effect
The source electrode of pipe M3 is grounded GND.
Preferably, the grid of the 4th field-effect tube M4 is connected to the first field-effect tube M1 and second effect
Should pipe M2 drain electrode, and by the second capacitor C2 be connected to the 5th field-effect tube M5 drain electrode and it is described 6th effect
Should pipe M6 grid；The drain electrode of the 4th field-effect tube M4 is connected to the grid of the 5th field-effect tube M5 and described
6th field-effect tube M6 drain electrode；The source electrode of the 4th field-effect tube M4 is grounded GND.
Preferably, the source electrode of the 5th field-effect tube M5 and the 6th field-effect tube M6 is connected with each other, and is connected simultaneously
It is connected to the output voltage domain power vd D2；The drain electrode of the 5th field-effect tube M5 is connected to the 6th field-effect tube M6's
Grid；The grid of the 5th field-effect tube M5 is connected to the drain electrode of the 6th field-effect tube M6, and is connected to signal output
Out is held, with output logic signal.
As shown in Figure 1, the working condition of high-speed level conversion circuit of the present invention is as follows:
1, in the initial state, the input signal of signal input part in is low level, and the output signal of signal output end out is also
Low level.Node i nn is the high level of input voltage domain power vd D1, the height electricity that node outn is output voltage domain power vd D2
It is flat；
2, when input signal is switched to high level by low level:
Signal input part in is connected to input voltage domain power vd D1 by the first field-effect tube M1, gets higher level by low level,
Node i nn can change to low level by the high level of input voltage domain power vd D1, so that third field-effect tube M3 is connected, the 4th
Effect pipe M4 is closed, and node outn can start under voltage due to the conducting of third field-effect tube M3 and the coupling of the second capacitor C2
Drop；Signal output end out can be due to the closing of the 4th field-effect tube M4, the voltage decline of node outn and first capacitor C1
Coupling and cause voltage to rise；Simultaneously as the voltage of signal output end out rises, and promote the 5th field-effect tube M5 gradually
It gradually closes, so that the decline of node outn voltage is faster, entire circuit forms a positive feedback, turns voltage quickly by low level
Change to high level.Finally, node outn is reduced to low level, and signal output end out becomes the height electricity of output voltage domain power vd D2
It is flat.
3, when input signal is switched to low level by high level:
When signal input part in changes to low level by the high level of input voltage domain power vd D1, node i nn can be become by low level
To the high level of input voltage domain power vd D1, so that third field-effect tube M3 is closed, the 4th field-effect tube M4 is connected, and signal is defeated
Outlet out can start voltage decline due to the conducting of the 4th field-effect tube M4 and the coupling of first capacitor C1；Node outn meeting
Due to the closing of third field-effect tube M3, output signal end out voltage decline and the second capacitor C2 coupling and lead to electricity
Pressure rises；Meanwhile the voltage of node outn rises, and the 6th field-effect tube M6 is promoted to close gradually, so that signal output end out
Voltage declines faster, and entire circuit forms a positive feedback, and voltage is made quickly to be converted to low level by high level.Finally, it saves
Point outn is upgraded to the high level of output voltage domain power vd D2, and signal output end out becomes low level.
4, step 2,3 complete a level conversion with low level-high level-low level period.Wherein, the first electricity
Hold C1 and the second capacitor C2 and improves level conversion speed.
The present invention also provides a kind of level conversion methods using above-mentioned high-speed level conversion circuit, as shown in Fig. 2, the method
Include:
The first field-effect tube M1 connects input voltage domain power vd D1 with the second field-effect tube M2；
The 5th field-effect tube M5 connects output voltage domain power vd D2 with the 6th field-effect tube M6；
In the grid input signal of the first field-effect tube M1 and the second field-effect tube M2；
When input signal is low level, the third field-effect tube M3 receives input signal conducting, the 4th field-effect tube
M4 receives input signal and closes, to export low level voltage；
When input signal is high level, the third field-effect tube M3 receives input signal and closes, the 4th field-effect tube
M4 receives input signal conducting, with output high level voltage.
The present invention also provides a kind of data transmission devices, including above-mentioned high-speed level conversion circuit.
It should be understood that the above is only a preferred embodiment of the present invention, the scope of the patents of the invention cannot be therefore limited,
It is all to utilize equivalent structure or equivalent flow shift made by description of the invention and accompanying drawing content, directly or indirectly use
In other related technical areas, it is included within the scope of the present invention.
Claims (9)
1. a kind of high-speed level conversion circuit, which is characterized in that the circuit includes be connected to input voltage domain power supply first
Field-effect tube, first field-effect tube are connected with the second field-effect tube, first field-effect tube and the second field-effect tube phase
It connects to form phase inverter；The phase inverter is also connected with third field-effect tube and the 4th field-effect tube, the third field effect
4th field-effect tube described in Ying Guanhe is connected to output voltage domain power supply by the 5th field-effect tube and the 6th field-effect tube；It is described
First capacitor and the second capacitor are also connected between third field-effect tube and the 4th field-effect tube.
2. high-speed level conversion circuit according to claim 1, which is characterized in that one end of the first capacitor is connected to
The grid of the third field-effect tube, and it is also attached to the grid of first field-effect tube and second field-effect tube；Institute
The other end for stating first capacitor is connected to the drain electrode of the 4th field-effect tube and the grid of the 5th field-effect tube
The drain electrode of pole, the 6th field-effect tube.
3. high-speed level conversion circuit according to claim 2, which is characterized in that one end of second capacitor is connected to
The drain electrode of the third field-effect tube is also attached to the drain electrode of the 5th field-effect tube and the grid of the 6th field-effect tube；
The other end of second capacitor is connected to the grid of the 4th field-effect tube, and is also attached to first field-effect tube
With the drain electrode of second field-effect tube.
4. high-speed level conversion circuit according to claim 1, which is characterized in that first field-effect tube and described the
The drain and gate of two field-effect tube is connected with each other, and the drain electrode of the two is connected to the grid of the 4th field-effect tube, the two
Grid be connected to signal input part, to receive voltage change signal；The source electrode of first field-effect tube is connected to described
Input voltage domain power supply, the source electrode ground connection of second field-effect tube.
5. high-speed level conversion circuit according to claim 1, which is characterized in that the grid of the third field-effect tube point
It is not connected to the grid of first field-effect tube and the second field-effect tube, and is connected to the described 5th by the first capacitor
The drain electrode of the grid of field-effect tube and the 6th field-effect tube；The drain electrode of the third field-effect tube is connected to the 5th effect
Should pipe drain electrode and the 6th field-effect tube grid, and by the second capacitance connection in the grid of the 4th field-effect tube
Pole；The source electrode of the third field-effect tube is grounded.
6. high-speed level conversion circuit according to claim 1, which is characterized in that the grid of the 4th field-effect tube point
It is not connected to the drain electrode of first field-effect tube and the second field-effect tube, and by second capacitance connection in the described 5th
The drain electrode of field-effect tube and the grid of the 6th field-effect tube；The drain electrode of 4th field-effect tube is connected to described
The grid of five field-effect tube and the 6th FET drain；The source electrode of 4th field-effect tube is grounded.
7. high-speed level conversion circuit according to claim 1, which is characterized in that the 5th field-effect tube and described
The source electrode of six field-effect tube is connected with each other, and is connected to output voltage domain power supply simultaneously；The leakage of 5th field-effect tube
Pole is connected to the grid of the 6th field-effect tube；The grid of 5th field-effect tube is connected to the 6th field-effect tube
Drain electrode, and it is connected to signal output end, with output logic signal.
8. a kind of level conversion method using high-speed level conversion circuit described in any one of claims 1 to 7, feature
It is, which comprises
First field-effect tube connects input voltage domain power supply with second field-effect tube；
5th field-effect tube connects output voltage domain power supply with the 6th field-effect tube；
In the grid input signal of first field-effect tube and second field-effect tube；
When input signal is low level, the third field-effect tube receives input signal conducting, and the 4th field-effect tube connects
It receives input signal to close, to export low level voltage；
When input signal is high level, the third field-effect tube receives input signal and closes, and the 4th field-effect tube connects
Input signal conducting is received, with output high level voltage.
9. a kind of data transmission device, which is characterized in that the data transmission device includes any one of claims 1 to 7 institute
The high-speed level conversion circuit stated.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810657707.8A CN108933592A (en) | 2018-06-25 | 2018-06-25 | high-speed level conversion circuit, level conversion method and data transmission device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810657707.8A CN108933592A (en) | 2018-06-25 | 2018-06-25 | high-speed level conversion circuit, level conversion method and data transmission device |
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| Publication Number | Publication Date |
|---|---|
| CN108933592A true CN108933592A (en) | 2018-12-04 |
Family
ID=64446931
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810657707.8A Pending CN108933592A (en) | 2018-06-25 | 2018-06-25 | high-speed level conversion circuit, level conversion method and data transmission device |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110739960A (en) * | 2019-10-18 | 2020-01-31 | 四川中微芯成科技有限公司 | level conversion circuit for increasing conversion speed and electronic equipment |
| CN116207985A (en) * | 2023-04-27 | 2023-06-02 | 成都明夷电子科技有限公司 | Voltage domain conversion circuit and electronic equipment |
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| JPH1117520A (en) * | 1997-06-26 | 1999-01-22 | Nec Ic Microcomput Syst Ltd | Level shifter circuit |
| US20080074148A1 (en) * | 2006-08-23 | 2008-03-27 | Stmicroelectronics Pvt. Ltd. | High speed level shifter |
| CN102340305A (en) * | 2011-07-13 | 2012-02-01 | 清华大学 | Positive high-voltage level-shifting circuit suitable for low power supply voltage |
| JP2013115601A (en) * | 2011-11-29 | 2013-06-10 | Toshiba Corp | Level shift circuit |
| CN103944554A (en) * | 2014-04-16 | 2014-07-23 | 华为技术有限公司 | Level switching circuit and digital-to-analog converter |
| US20160254815A1 (en) * | 2015-02-27 | 2016-09-01 | Empower Semiconductor, Inc. | Techniques and devices for level-shifting a signal |
| US20170237438A1 (en) * | 2016-02-17 | 2017-08-17 | Infineon Technologies Ag | Level shifter |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH1117520A (en) * | 1997-06-26 | 1999-01-22 | Nec Ic Microcomput Syst Ltd | Level shifter circuit |
| US20080074148A1 (en) * | 2006-08-23 | 2008-03-27 | Stmicroelectronics Pvt. Ltd. | High speed level shifter |
| CN102340305A (en) * | 2011-07-13 | 2012-02-01 | 清华大学 | Positive high-voltage level-shifting circuit suitable for low power supply voltage |
| JP2013115601A (en) * | 2011-11-29 | 2013-06-10 | Toshiba Corp | Level shift circuit |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN110739960A (en) * | 2019-10-18 | 2020-01-31 | 四川中微芯成科技有限公司 | level conversion circuit for increasing conversion speed and electronic equipment |
| CN116207985A (en) * | 2023-04-27 | 2023-06-02 | 成都明夷电子科技有限公司 | Voltage domain conversion circuit and electronic equipment |
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