CN108922948A - A kind of light emitting diode construction and preparation method thereof - Google Patents
A kind of light emitting diode construction and preparation method thereof Download PDFInfo
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- CN108922948A CN108922948A CN201810975815.XA CN201810975815A CN108922948A CN 108922948 A CN108922948 A CN 108922948A CN 201810975815 A CN201810975815 A CN 201810975815A CN 108922948 A CN108922948 A CN 108922948A
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- 238000002360 preparation method Methods 0.000 title abstract description 7
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/12—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
- H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
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Abstract
The present invention proposes a kind of light emitting diode construction and preparation method thereof in fact, is related to technical field of semiconductors.The light emitting diode construction includes substrate, the buffer layer positioned at one side of substrate；Multiple spaced nitride support columns positioned at buffer layer far from one side of substrate；And the luminescent layer being epitaxially-formed based on nitride support column.The light emitting diode construction and preparation method thereof that the present invention provides in fact has the advantages that be able to suppress the formation of crackle, improve the crystal quality of N-type AlGaN and be conducive to improve the light extraction efficiency of device.
Description
Technical field
The present invention relates to technical field of semiconductors, in particular to a kind of light emitting diode construction and preparation method thereof.
Background technique
In recent years, deep-UV light-emitting diode because its sterilizing, non line of sight communication, special gas in terms of
Using receive more and more attention.For from the angle of Lattice Matching and matched coefficients of thermal expansion, AlN monocrystalline is to prepare depth
The optimal substrate material of UV LED, however AlN single crystalline substrate is still limited by that at high cost, size is small, saturating at this stage
Penetrate the low critical issue of rate.Therefore, regrowth subsequent device structure is main after depositing high-quality AlN thick film on a sapphire substrate
The technology path of stream.
There are problems for existing technology path：1. in order to improve crystal quality and guarantee current expansion characteristic, AlN and
N-shaped AlGaN usually respectively needs to grow into 2-3 microns of thickness, and in growth and temperature-fall period, biggish lattice mismatch and heat are lost
With will cause face checking problem；2.Al atomic migration ability is weaker, to realize the AlN of high quality, needs at least 1250 Celsius
The temperature of degree, this proposes very high requirement to reaction chamber and heater strip；3. thicker AlN and AlGaN structure will affect quantum
The luminous outgoing of well region, reduces light extraction efficiency.
It is the emphasis of those skilled in the art's concern in view of this, how to solve the above problems.
Summary of the invention
In view of this, the purpose of the present invention is to provide a kind of light emitting diode construction, to solve to shine in the prior art
Diode is easy the problem to crack and light extraction efficiency is lower in the production process.
Another object of the present invention is to provide a kind of light emitting diode construction production methods, to solve to send out in the prior art
Optical diode is easy the problem to crack and light extraction efficiency is lower in the production process.
To achieve the goals above, technical solution used in the embodiment of the present invention is as follows：
On the one hand, the embodiment of the present invention proposes a kind of light emitting diode construction, and the light emitting diode construction includes：
Substrate；
Buffer layer positioned at the one side of substrate；
Multiple spaced nitride support columns positioned at the buffer layer far from the one side of substrate；And
The luminescent layer being epitaxially-formed based on the nitride support column.
Further, the luminescent layer includes：
The N-type layer to be formed is grown based on the nitride support column, wherein is formed in the N-type layer multiple from close to described
The recessed portion of nitride support column side recess；
The quantum well layer to be formed is grown far from the side of nitride support column based on the N-type layer；
The electronic barrier layer to be formed is grown far from the side of N-type layer based on the quantum well layer；And
The P-type layer to be formed is grown far from the side of quantum well layer based on the electronic barrier layer.
Further, the luminescent layer includes：
It grows to form N-type layer based on the nitride support column, wherein formed in the N-type layer multiple from close to the nitrogen
The recessed portion of compound support column side recess；
The quantum well layer to be formed is grown far from the side of the nitride support column based on the N-type layer；And
The P-type layer to be formed is grown far from the side of N-type layer based on the quantum well layer.
Further, the multiple nitride support column is in interval setting between each other.
Further, the multiple nitride support column equidistantly arranges between each other, two neighboring nitride support column
Between spacing be 200-800nm.
Further, multiple through slots for penetrating through the buffer layer are offered on the buffer layer, form the buffer layer multiple
Part corresponding with the multiple nitride support column respectively.
On the other hand, the embodiment of the invention provides a kind of light emitting diode construction production method, the light emitting diodes
Construction manufacturing method includes：
It makes to form buffer layer based on one side of substrate；
It makes to form undoped nitride layer far from the side of the substrate based on the buffer layer；
Using exposure mask from the side of the undoped nitride far from the buffer layer to the undoped nitride layer into
Row etching, forms multiple spaced nitride support columns；
Luminescent layer is epitaxially-formed far from the side of buffer layer based on the nitride support column.
Further, described non-to be mixed from the side of the undoped nitride far from the buffer layer to described using exposure mask
Miscellaneous nitride layer performs etching, formed multiple spaced nitride support columns the step of include：
Nanometer bead is mixed with organic solution, obtains mix reagent；Wherein, using the nanometer of 10% weight/volume
Bead and organic solvent are with 2:3 volume ratio is mixed；
By mix reagent drop in a side surface of the undoped nitride layer far from buffer layer, monoatomic layer is formed
Nanometer bead exposure mask；
It is performed etching since the undoped nitride layer along the gap of the nanometer bead exposure mask, until cutting through substrate
Surface, to form more nitride support columns.
Further, it is described using exposure mask from the side of the undoped nitride far from buffer layer to the undoped nitrogen
Compound layer performs etching, formed multiple spaced nitride support columns the step of include：
Nanometer bead is mixed with organic solution, obtains mix reagent；
By mix reagent drop in a side surface of the undoped nitride layer far from buffer layer, monoatomic layer is formed
Nanometer bead exposure mask；
It is performed etching since the undoped nitride layer along the gap of the nanometer bead exposure mask, until cutting through described
Surface of the undoped nitride layer to the buffer layer far from one side of substrate cuts through the undoped nitride layer to described
Inside buffer layer, to form more nitride support columns.
Further, the step of luminescent layer being epitaxially-formed far from the side of buffer layer based on the nitride support column
Including：
It grows to form N-type layer based on the nitride support column, wherein formed in the N-type layer multiple from close to the nitrogen
The recessed portion of compound support column side recess；And the V/III elemental mole ratios of N-type layer are 400-1500, with a thickness of 1-3 microns,
Pressure is 50-150mbar, and growth temperature is 1050-1150 degree；
It grows to form quantum well layer far from the side of nitride support column based on the N-type layer；Wherein, the V/ of quantum well layer
III elemental mole ratios are 400-1500, and pressure 50-150mbar, growth temperature is 1050-1150 degrees Celsius；
It grows to form electronic barrier layer far from the side of N-type layer based on the quantum well layer；Wherein, the V/ of electronic barrier layer
III elemental mole ratios are 800-2000, and pressure 50-150mbar, growth temperature is 1050-1150 degrees Celsius；
It grows to form P-type layer far from the side of quantum well layer based on the electronic barrier layer；Wherein, the V/III member of P-type layer
Plain molar ratio is 800-2000, and pressure 50-150mbar, growth temperature is 1050-1150 degrees Celsius.
Compared with the prior art, the invention has the advantages that：
A kind of light emitting diode construction provided by the invention and preparation method thereof, wherein light emitting diode construction includes
Substrate, the buffer layer positioned at one side of substrate；Multiple spaced nitride support columns positioned at buffer layer far from one side of substrate；
And the luminescent layer being epitaxially-formed based on nitride support column.In a first aspect, due to light emitting diode provided by the invention
Structure effectively reduces the contact area with Sapphire Substrate, is conducive to the release of strain, therefore in extension and heating and cooling process
In be able to suppress the formation of crackle.Second aspect, light emitting diode construction provided by the invention do not need high quality buffer layer, benefit
The occupied area that dislocation can be reduced with nitride support column, bending can be passed through by closing up process Dislocations in nitride support column
Effect is reduced, highdensity nitride support column dislocation to bury in oblivion probability very big；Meanwhile lesser nitride support intercolumniation is every can
Orientation difference very little when guaranteeing to close up between different crystal column, inhibits the generation of new dislocation, is effectively improved N-type AlGaN's
Crystal quality.The third aspect, the air hole between nano-pillar are conducive to the luminous outgoing of quantum well layer, are conducive to improve device
Light extraction efficiency.
To enable the above objects, features and advantages of the present invention to be clearer and more comprehensible, preferred embodiment is cited below particularly, and cooperate
Appended attached drawing, is described in detail below.
Detailed description of the invention
In order to illustrate the technical solution of the embodiments of the present invention more clearly, below will be to needed in the embodiment attached
Figure is briefly described, it should be understood that the following drawings illustrates only certain embodiments of the present invention, therefore is not construed as pair
The restriction of range for those of ordinary skill in the art without creative efforts, can also be according to this
A little attached drawings obtain other relevant attached drawings.
Fig. 1 shows the sectional view of the first light emitting diode construction of the embodiment of the present invention offer.
The section signal of the substrate, buffer layer and the undoped nitride layer that are provided Fig. 2 shows the embodiment of the present invention
Figure.
Fig. 3 shows the nitride support column of the embodiment of the present invention offer and the structural schematic diagram of substrate.
Fig. 4 shows the sectional view of second of light emitting diode construction of the embodiment of the present invention offer.
Fig. 5 shows the sectional view of the third light emitting diode construction of the embodiment of the present invention offer.
Fig. 6 shows the flow chart of the light emitting diode construction production method of the embodiment of the present invention offer.
Icon：100- light emitting diode construction；110- substrate；120- nitride support column；130-N type layer；131- recess
Portion；140- quantum well layer；150- electronic barrier layer；160-P type layer；170- luminescent layer；180- buffer layer；The undoped nitridation of 190-
Nitride layer.
Specific embodiment
In order to make the object, technical scheme and advantages of the embodiment of the invention clearer, below in conjunction with the embodiment of the present invention
In attached drawing, technical scheme in the embodiment of the invention is clearly and completely described, it is clear that described embodiment is
A part of the embodiment of the present invention, instead of all the embodiments.The present invention being usually described and illustrated herein in the accompanying drawings is implemented
The component of example can be arranged and be designed with a variety of different configurations.
Below in conjunction with attached drawing in the embodiment of the present invention, technical solution in the embodiment of the present invention carries out clear, complete
Ground description, it is clear that described embodiments are only a part of the embodiments of the present invention, instead of all the embodiments.Usually exist
The component of the embodiment of the present invention described and illustrated in attached drawing can be arranged and be designed with a variety of different configurations herein.Cause
This, is not intended to limit claimed invention to the detailed description of the embodiment of the present invention provided in the accompanying drawings below
Range, but it is merely representative of selected embodiment of the invention.Based on the embodiment of the present invention, those skilled in the art are not doing
Every other embodiment obtained under the premise of creative work out, shall fall within the protection scope of the present invention.
It should be noted that：Similar label and letter indicate similar terms in following attached drawing, therefore, once a certain Xiang Yi
It is defined in a attached drawing, does not then need that it is further defined and explained in subsequent attached drawing.Meanwhile of the invention
In description, it is also necessary to which explanation is unless specifically defined or limited otherwise, term " connected ", " connection " shall be understood in a broad sense,
It for example, it may be being fixedly connected, may be a detachable connection, or be integrally connected；It can be mechanical connection, be also possible to electricity
Connection；It can be directly connected, the connection inside two elements can also be can be indirectly connected through an intermediary.For
For those skilled in the art, the concrete meaning of above-mentioned term in the present invention can be understood with concrete condition.It ties below
Attached drawing is closed, is elaborated to some embodiments of the present invention.In the absence of conflict, following embodiment and embodiment
In feature can be combined with each other.
First embodiment
Referring to Fig. 1, the embodiment of the invention provides a kind of light emitting diode constructions 100, wherein the light emitting diode knot
Structure 100 is including substrate 110, positioned at the buffer layer 180 of 110 side of substrate, positioned at the buffer layer 180 far from the substrate
Multiple spaced nitride support columns 120 of 110 sides, and it is based on the 120 epitaxial growth shape of nitride support column
At luminescent layer 170.
Specifically, in this present embodiment, substrate 110 uses Sapphire Substrate 110, of course, in some other implementations
In example, substrate 110 or other materials, such as silicon substrate 110 etc., the present embodiment does not do any restriction to this.
Further, AlN buffer layer 180 is used for 180 layers of buffer layer, it can by growth technology on substrate 110
AlN buffer layer 180 is grown, for example, using Metal Organic Vapor epitaxial growth regime growing AIN buffer layer 180, when
So, other epitaxial growth regimes can also be used in some other embodiments.Simultaneously, it should be noted that this implementation mentions
The buffer layer 180 of confession is AlN buffer layer 180, but in some other embodiments, other nitride or phosphide can also be used
Buffer layer 180, the present embodiment do not do any restriction to this yet.
It should also be noted that, in order to keep the performance of whole diode structure of giving out light more preferable, AlN buffer layer 180
Including the first AlN buffer layer 180 and the 2nd AlN buffer layer 180, wherein deposit the first AlN of 20-30nm first on substrate 110
Buffer layer 180, epitaxial growth conditions are that the molar ratio of V/III element is 150-500, and pressure 50-75mbar, temperature exists
900-950 degree or so, then the 2nd AlN buffer layer 180 of continued growth on the first AlN buffer layer 180, wherein its extension is raw
Elongate member is with a thickness of 200-500nm, and V/III molar ratio is 200-1000, and pressure 50-75mbar, temperature is in 1050-1150
Between degree.
Further, multiple spaced nitride support columns are made in the side of the separate substrate 110 of buffer layer 180
120, referring to Fig. 2, the present embodiment uses the undoped nitride of side epitaxial growth in the separate substrate 110 of buffer layer 180
Layer 190, is then performed etching using exposure mask, so that nitride support column 120 is produced, nitride support column as shown in Figure 3
120。
It should be noted that referring to Fig. 4, a kind of implementation as embodiment etches deep during etching
Degree is only to be etched to the surface of buffer layer 180, so that the only shape in undoped nitride layer 190 of nitride support column 120
At.
As implementation in the second of the present embodiment, referring to Fig. 5, etching depth is only to carve during etching
Erosion is in buffer layer 180 so that offer multiple grooves on buffer layer 180, and make buffer layer 180 formed it is multiple respectively with it is more
The corresponding part of a nitride support column 120, i.e. nitride buffer layer 180 are by undoped nitride layer 190 and buffer layer 180
Part forms.
As implementation in the third of the present embodiment, referring to Fig. 1, etching depth is only to pass through during etching
Lead to undoped nitride layer 190 and buffer layer 180, so that offering the logical of multiple perforation buffer layers 180 on buffer layer 180
Slot, and the buffer layer 180 forms multiple parts corresponding with the multiple nitride support column 120 respectively.
Meanwhile with the present embodiment, multiple nitride support columns 120 are in interval setting between each other.Further, multiple
The equidistant arrangement between each other of nitride support column 120, and the spacing between two neighboring nitride support column 120 is 200-
800nm.Simultaneously, it should be noted that in the present embodiment, nitride support column 120 exists in the form of nano-pillar.Also,
Undoped nitride layer 190 includes undoped AlGaN layer, wherein the epitaxial growth conditions of undoped nitride layer 190 are slow
Rush the growth undoped AlxGa1-xN (0.5 of 300-800nm on layer 180<x<1), V/III elemental mole ratios are 400-1500, pressure
Power is 50-150mbar, and growth temperature is between 1050-1150 degree.Of course, in some other embodiments, undoped nitrogen
Other nitride or phosphide material can also be used in compound layer 190, and the present embodiment does not do any restriction to this.
In a first aspect, effectively reducing the contact area with Sapphire Substrate 110, favorably by forming nanometer rod structure
In the release of strain, the formation of crackle is able to suppress in extension and heating and cooling process.Second aspect, by the way that nano-pillar knot is arranged
Structure does not need high quality AlN, the occupied area of dislocation is reduced using nanometer rod structure, closing up process Dislocations in nano-pillar can
To be reduced by curvature effect, highdensity nano-pillar make dislocation to bury in oblivion probability very big；Meanwhile lesser nano-pillar interval can
Orientation difference very little when guaranteeing to close up between different crystal column, inhibits the generation of new dislocation, is effectively improved N-type AlGaN's
Crystal quality.Since the transfer ability ratio Al of Ga is strong, in addition nano-pillar gap is sub-micron rank, AlGaN nano-pillar is not needed
Very high temperature can be easy to close up, the third aspect, and the air hole between nano-pillar is conducive to the luminous outgoing in quantum well region,
Be conducive to improve the light extraction efficiency of device.
Meanwhile a kind of implementation as the present embodiment, luminescent layer 170 include being grown based on nitride support column 120
The N-type layer 130 of formation, wherein formed in the N-type layer 130 multiple from the recessed portion being recessed close to 120 side of nitride support column
131, and the quantum well layer 140 to be formed is grown far from the side of nitride support column 120 based on N-type layer 130, and be based on Quantum Well
140 side far from N-type layer 130 of layer grow the electronic barrier layer 150 to be formed, and based on electronic barrier layer 150 far from quantum
The side of well layer 140 grows the P-type layer 160 to be formed.
Wherein, it should be noted that due on undoped nitride layer 190 because production nano-pillar is there are multiple cavities,
Therefore when carrying out epitaxial growth N-type layer 130, growth is not will do it in the place for having cavity, thus during the growth process by phase
It is polymerize between adjacent two nano-pillars, to form multiple recessed portions 131, while the N-type layer 130 that embodiment provides includes N
Type AlGaN layer, quantum well layer 140 include AlInGaN layers, and P-type layer 160 includes p-type AlGaN superlattice layer, electronic barrier layer 150
Including p-type AlGaN layer.
Wherein, the electronics that hole and the P-type layer 160 that N-type layer 130 issues issue at quantum well layer 140 in conjunction with and carry out
It shines, meanwhile, electronic barrier layer 150 can play the effect for stopping hole to enter P-type layer 160, carry out enhancing light extraction efficiency.
As another implementation of the present embodiment, luminescent layer 170 includes being formed based on the growth of nitride support column 120
N-type layer 130, wherein formed in the N-type layer 130 it is multiple from close to 120 side of nitride support column be recessed recessed portions 131,
And the quantum well layer 140 to be formed is grown far from the side of nitride support column 120 based on N-type layer 130, and be based on electronic blocking
150 side far from quantum well layer 140 of layer grow the P-type layer 160 to be formed.
Second embodiment
Referring to Fig. 6, this luminous two the embodiment of the invention also provides a kind of 100 production method of light emitting diode construction
100 production method of pole pipe structure includes：
Step S101 makes to form buffer layer 180 based on 110 side of substrate.
Step S102 makes to form undoped nitride layer based on the buffer layer 180 far from the side of the substrate 110
190。
In the present embodiment, undoped nitride layer 190 includes undoped AlGaN layer, wherein undoped nitride layer
190 epitaxial growth conditions are that the undoped AlxGa1-xN (0.5 of 300-800nm is grown on buffer layer 180<x<1), V/III
Elemental mole ratios are 400-1500, and pressure 50-150mbar, growth temperature is between 1050-1150 degree.Of course, other
Some embodiments in, undoped nitride layer 190 can also be used other nitride or phosphide material, the present embodiment to this simultaneously
Any restriction is not done.
Step S103, the side with exposure mask from the undoped nitride far from the buffer layer 180 is to described undoped
Nitride layer 190 performs etching, and forms multiple spaced nitride support columns 120.
Wherein it should be noted that one of implementation as the present embodiment, step S103 include：
Nanometer bead is mixed with organic solution, obtains mix reagent by sub-step S1031.
In the present embodiment, undoped nitride layer 190 is performed etching using nanometer bead as exposure mask, wherein be
So that nanometer bead is uniformly laid with surface with undoped nitride layer 190, the present embodiment use by nanometer bead with
The mode of organic solution mixing is laid with.Wherein, the present embodiment using silica nanometer bead as exposure mask, and titanium dioxide
The diameter of silicon nanometer bead is in 200-800nm or so.
Meanwhile organic solution includes alcoholic solution and chloroformic solution, wherein the nanometer using 10% weight/volume is small
Ball and organic solvent are with 2:3 volume ratio is mixed, i.e., small using the silica nanometer of 10% weight/volume
Ball/alcoholic solution and chloroform are with 2:3 volume ratio be mixed 30 minutes, so that silica nanometer be made to be spread in completely
In organic solution, and then obtain mix reagent.
Sub-step S1032, by the mix reagent drop in the undoped nitride layer 190 far from buffer layer 180 one
Side surface forms monoatomic layer nanometer bead exposure mask.
It is dripped when a side surface of the undoped nitride layer 190 far from buffer layer 180 by mix reagent, due to expanding
Effect is dissipated, so that nanometer bead is layed in the surface of undoped nitride layer 190, forms monoatomic layer nanometer bead exposure mask.
Step S1033 is carved since the undoped nitride layer 190 along the gap of the nanometer bead exposure mask
Erosion, until 110 surface of substrate is cut through, to form more nitride support columns 120.
After being fabricated to exposure mask using nanometer bead, in the present embodiment, sense coupling equipment is utilized
The undoped nitride layer 190 that nanometer globular spaces of Czermak exposes is performed etching, etches into sapphire surface always, forms more
Nitride support column 120.
As second of implementation of the present embodiment, step S103 includes：
Nanometer bead is mixed with organic solution, obtains mix reagent by sub-step S1031.
Nanometer bead is mixed with organic solution, obtains mix reagent by sub-step S1032.
Sub-step S1033 is carved since the undoped nitride layer 190 along the gap of the nanometer bead exposure mask
Erosion, until cutting through surface of the undoped nitride layer 190 to the buffer layer 180 far from 110 side of substrate or cutting through
Inside the undoped nitride layer 190 to the buffer layer 180, to form more nitride support columns 120.
In the present embodiment, it after being fabricated to exposure mask using nanometer bead, is set using sense coupling
It is standby that the undoped nitride layer 190 that nanometer globular spaces of Czermak exposes is performed etching, cut through always undoped nitride layer 190 to
Surface of the buffer layer 180 far from 110 side of substrate is cut through inside the undoped nitride layer 190 to buffer layer 180, with
Form more nitride support columns 120.
Step S104 cleans the more nitride support columns 120.
Specifically, in the present embodiment, using buffered oxide etch liquid (49%HF aqueous solution：40%NH4F aqueous solution
=1：6 (volume ratios)) cleaning sample 5min, to remove remaining silicon oxide pellets above nano-pillar.
Step S105 is epitaxially-formed luminescent layer far from the side of buffer layer 180 based on the nitride support column 120
170。
Wherein, step S105 includes：
Sub-step S1051 forms N-type layer 130 based on the nitride support column 120 growth, wherein in the N-type layer 130
It is formed multiple from the recessed portion 131 being recessed close to 120 side of nitride support column.
It should be noted that due on undoped nitride layer 190 because production nano-pillar is there are multiple cavities,
When carrying out epitaxial growth N-type layer 130, growth not will do it in the place for having cavity, thus during the growth process by two neighboring
It is polymerize between nano-pillar, to form multiple recessed portions 131, while the N-type layer 130 that embodiment provides includes N-type AlGaN
Layer, and it is 400-1500 that the outer rand of N-type layer 130, which is V/III elemental mole ratios, with a thickness of 1-3 microns, pressure 50-
150mbar, growth temperature are 1050-1150 degree.
Sub-step S1052 grows to form quantum well layer based on the N-type layer 130 far from the side of nitride support column 120
140。
In this present embodiment, AlxInyGa1-x-yN/AlmInnGa1-m-nN (0 is grown on N-shaped AlGaN<x,y,m,n<1)
Quantum well structure, it is 400-1500 that growth conditions, which is V/III elemental mole ratios, pressure 50-150mbar, and growth temperature is
1050-1150 degrees Celsius.
Sub-step S1053 grows to form electronic barrier layer based on the quantum well layer 140 far from the side of N-type layer 130
150。
In the present embodiment, 10-30nm thickness p-type AlxGa1-xN (0.5 is grown<x<1) 150 structure of electronic barrier layer, outside
It is 800-2000 that prolong growth conditions, which be V/III molar ratio, and pressure 50-150mbar, growth temperature is 1050-1150 degrees Celsius.
Sub-step S1054 grows to form P-type layer based on the electronic barrier layer 150 far from the side of quantum well layer 140
160。
In the present embodiment, 30-60nm thickness p-type AlxGa1-xN/AlyGa1-yN (0 is grown<x<1,0.5<y<1) super brilliant
Lattice, it is 5-10 that epitaxial growth conditions, which are superlattice period, and V/III molar ratio is 800-2000, pressure 50-150mbar,
Growth temperature is 1050-1150 degrees Celsius.
In conclusion a kind of light emitting diode construction provided by the invention and preparation method thereof, wherein light emitting diode
Structure includes substrate, the buffer layer positioned at one side of substrate；Multiple spaced nitridations positioned at buffer layer far from one side of substrate
Object support column；And the luminescent layer being epitaxially-formed based on nitride support column.In a first aspect, due to hair provided by the invention
Optical diode structure effectively reduces the contact area with Sapphire Substrate, is conducive to the release of strain, therefore in extension and liter
The formation of crackle is able to suppress in temperature-fall period.Second aspect, light emitting diode construction provided by the invention do not need high quality
Buffer layer can reduce the occupied area of dislocation using nitride support column, and closing up process Dislocations in nitride support column can
To be reduced by curvature effect, highdensity nitride support column dislocation to bury in oblivion probability very big；Meanwhile lesser nitride branch
Orientation difference very little when dagger interval can guarantee to close up between different crystal column, inhibits the generation of new dislocation, is effectively improved N
The crystal quality of type AlGaN.The third aspect, the air hole between nano-pillar are conducive to the luminous outgoing of quantum well layer, are conducive to
Improve the light extraction efficiency of device.
It should be noted that, in this document, the relational terms of such as " first " and " second " or the like are used merely to one
A entity or operation with another entity or operate distinguish, without necessarily requiring or implying these entities or operation it
Between there are any actual relationship or orders.Moreover, the terms "include", "comprise" or its any other variant are intended to
Cover non-exclusive inclusion, so that the process, method, article or equipment for including a series of elements not only includes those
Element, but also including other elements that are not explicitly listed, or further include for this process, method, article or setting
Standby intrinsic element.In the absence of more restrictions, the element limited by sentence "including a ...", it is not excluded that
There is also other identical elements in the process, method, article or apparatus that includes the element.
The foregoing is only a preferred embodiment of the present invention, is not intended to restrict the invention, for the skill of this field
For art personnel, the invention may be variously modified and varied.All within the spirits and principles of the present invention, made any to repair
Change, equivalent replacement, improvement etc., should all be included in the protection scope of the present invention.It should be noted that：Similar label and letter exist
Similar terms are indicated in following attached drawing, therefore, once being defined in a certain Xiang Yi attached drawing, are then not required in subsequent attached drawing
It is further defined and explained.
Claims (10)
1. a kind of light emitting diode construction, which is characterized in that the light emitting diode construction includes：
Substrate；
Buffer layer positioned at the one side of substrate；
Multiple spaced nitride support columns positioned at the buffer layer far from the one side of substrate；And
The luminescent layer being epitaxially-formed based on the nitride support column.
2. light emitting diode construction as described in claim 1, which is characterized in that the luminescent layer includes：
The N-type layer to be formed is grown based on the nitride support column, wherein is formed in the N-type layer multiple from close to the nitridation
The recessed portion of object support column side recess；
The quantum well layer to be formed is grown far from the side of nitride support column based on the N-type layer；
The electronic barrier layer to be formed is grown far from the side of N-type layer based on the quantum well layer；And
The P-type layer to be formed is grown far from the side of quantum well layer based on the electronic barrier layer.
3. light emitting diode construction as described in claim 1, which is characterized in that the luminescent layer includes：
It grows to form N-type layer based on the nitride support column, wherein formed in the N-type layer multiple from close to the nitride
The recessed portion of support column side recess；
The quantum well layer to be formed is grown far from the side of the nitride support column based on the N-type layer；And
The P-type layer to be formed is grown far from the side of N-type layer based on the quantum well layer.
4. light emitting diode construction as described in claim 1, which is characterized in that the multiple nitride support column in mutually it
Between be spaced setting.
5. light emitting diode construction as claimed in claim 4, which is characterized in that the multiple nitride support column is mutual
Equidistant to arrange, the spacing between two neighboring nitride support column is 200-800nm.
6. light emitting diode construction as described in claim 1, which is characterized in that offering multiple perforations on the buffer layer should
The through slot of buffer layer makes the buffer layer form multiple parts corresponding with the multiple nitride support column respectively.
7. a kind of light emitting diode construction production method, which is characterized in that the light emitting diode construction production method includes：
It makes to form buffer layer based on one side of substrate；
It makes to form undoped nitride layer far from the side of the substrate based on the buffer layer；Wherein, undoped nitride
The V/III race elemental mole ratios of layer are 400-1500, and pressure 50-150mbar, growth temperature is between 1050-1150 degree；
The undoped nitride layer is carved from the side of the undoped nitride far from the buffer layer using exposure mask
Erosion forms multiple spaced nitride support columns；
Luminescent layer is epitaxially-formed far from the side of buffer layer based on the nitride support column.
8. light emitting diode construction production method as claimed in claim 7, which is characterized in that it is described using exposure mask from described non-
Side of the doped nitride far from the buffer layer performs etching the undoped nitride layer, is formed multiple spaced
The step of nitride support column includes：
Nanometer bead is mixed with organic solution, obtains mix reagent；Wherein, using the nanometer bead of 10% weight/volume
With organic solvent with 2:3 volume ratio is mixed；
By mix reagent drop in a side surface of the undoped nitride layer far from buffer layer, monoatomic layer nanometer is formed
Bead exposure mask；
It is performed etching since the undoped nitride layer along the gap of the nanometer bead exposure mask, until cutting through substrate table
Face, to form more nitride support columns.
9. light emitting diode construction production method as claimed in claim 7, which is characterized in that it is described using exposure mask from described non-
Side of the doped nitride far from buffer layer performs etching the undoped nitride layer, forms multiple spaced nitridations
The step of object support column includes：
Nanometer bead is mixed with organic solution, obtains mix reagent；
By mix reagent drop in a side surface of the undoped nitride layer far from buffer layer, monoatomic layer nanometer is formed
Bead exposure mask；
It is performed etching since the undoped nitride layer along the gap of the nanometer bead exposure mask, until cutting through described non-mix
Surface of the miscellaneous nitride layer to the buffer layer far from one side of substrate cuts through the undoped nitride layer to the buffering
Layer is internal, to form more nitride support columns.
10. light emitting diode construction production method as claimed in claim 8, which is characterized in that be based on the nitride support
The step of column is epitaxially-formed luminescent layer far from the side of buffer layer include：
It grows to form N-type layer based on the nitride support column, wherein formed in the N-type layer multiple from close to the nitride
The recessed portion of support column side recess；And the V/III elemental mole ratios of N-type layer are 400-1500, and with a thickness of 1-3 microns, pressure
For 50-150mbar, growth temperature is 1050-1150 degree；
It grows to form quantum well layer far from the side of nitride support column based on the N-type layer；Wherein, the V/III of quantum well layer
Elemental mole ratios are 400-1500, and pressure 50-150mbar, growth temperature is 1050-1150 degrees Celsius；
It grows to form electronic barrier layer far from the side of N-type layer based on the quantum well layer；Wherein, the V/III of electronic barrier layer
Elemental mole ratios are 800-2000, and pressure 50-150mbar, growth temperature is 1050-1150 degrees Celsius；
It grows to form P-type layer far from the side of quantum well layer based on the electronic barrier layer；Wherein, the V/III element of P-type layer rubs
You are than being 800-2000, and pressure 50-150mbar, growth temperature is 1050-1150 degrees Celsius.
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