CN104485400A - Epitaxial structure of III-V nitride and growth method thereof - Google Patents
Epitaxial structure of III-V nitride and growth method thereof Download PDFInfo
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- 150000004767 nitrides Chemical class 0.000 title claims abstract description 51
- 230000012010 growth Effects 0.000 title claims abstract description 43
- 238000000034 method Methods 0.000 title claims abstract description 24
- 239000000758 substrate Substances 0.000 claims abstract description 79
- 238000000576 coating method Methods 0.000 claims description 59
- 239000011248 coating agent Substances 0.000 claims description 58
- 239000004744 fabric Substances 0.000 claims description 30
- 229910052782 aluminium Inorganic materials 0.000 claims description 16
- 208000012868 Overgrowth Diseases 0.000 claims description 13
- 230000008021 deposition Effects 0.000 claims description 11
- 239000007789 gas Substances 0.000 claims description 9
- 229910002601 GaN Inorganic materials 0.000 claims description 8
- 238000000605 extraction Methods 0.000 claims description 8
- 239000012744 reinforcing agent Substances 0.000 claims description 8
- 230000001351 cycling effect Effects 0.000 claims description 7
- 229910052594 sapphire Inorganic materials 0.000 claims description 7
- 239000010980 sapphire Substances 0.000 claims description 7
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 6
- 230000008859 change Effects 0.000 claims description 6
- 230000007547 defect Effects 0.000 claims description 6
- 230000015572 biosynthetic process Effects 0.000 claims description 5
- 239000000463 material Substances 0.000 claims description 5
- 229910052757 nitrogen Inorganic materials 0.000 claims description 3
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 2
- 238000005516 engineering process Methods 0.000 claims description 2
- 229910052710 silicon Inorganic materials 0.000 claims description 2
- 239000010703 silicon Substances 0.000 claims description 2
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 2
- 230000005012 migration Effects 0.000 claims 1
- 238000013508 migration Methods 0.000 claims 1
- 230000006911 nucleation Effects 0.000 claims 1
- 238000010899 nucleation Methods 0.000 claims 1
- 238000000407 epitaxy Methods 0.000 abstract description 2
- 230000001737 promoting effect Effects 0.000 abstract 1
- 238000000151 deposition Methods 0.000 description 8
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 7
- 229910002704 AlGaN Inorganic materials 0.000 description 5
- 238000010586 diagram Methods 0.000 description 5
- 230000007773 growth pattern Effects 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 4
- 230000008569 process Effects 0.000 description 3
- 230000008901 benefit Effects 0.000 description 2
- 230000010261 cell growth Effects 0.000 description 2
- 238000002248 hydride vapour-phase epitaxy Methods 0.000 description 2
- 230000010287 polarization Effects 0.000 description 2
- 239000004094 surface-active agent Substances 0.000 description 2
- 241001025261 Neoraja caerulea Species 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 238000004887 air purification Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 230000009643 growth defect Effects 0.000 description 1
- 230000031700 light absorption Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000002269 spontaneous effect Effects 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
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- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/14—Feed and outlet means for the gases; Modifying the flow of the reactive gases
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- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
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- C30B25/16—Controlling or regulating
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- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/38—Nitrides
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
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- H01—ELECTRIC ELEMENTS
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Abstract
The invention discloses an epitaxial structure of III-V nitride and a growth method thereof. The growth method comprises the following steps: providing a patterned substrate; growing an underlying structure of an AlN buffer layer on the patterned substrate, wherein the underlying structure is gradually covered with the patterned substrate from the bottom of the patterned substrate to the top of the patterned substrate, so that the upper surface of the underlying structure trends to be smooth, the underlying structure can bend through partial dislocation due to two-dimensional lateral growth, the AlN buffer is relatively difficult to nucleate and grow on the side face of the patterned substrate in lateral epitaxy, and thus an air layer gap is formed between the underlying structure and the side face of the patterned substrate; continuously growing the AlN buffer layer on the underlying structure until the upper surface is approximately smooth; growing an III-V nitride layer on the approximately smooth AlN buffer layer, thereby improving the epitaxial quality of the III-V nitride layer, reducing the lattice imperfection and promoting the luminous efficiency.
Description
Technical field
The present invention relates to technical field of semiconductor, particularly extension iii-v nitride material in patterned substrate.
Background technology
The remarkable advantage such as light-emitting diode has that long service life, caloric value are low, fast response time, environmental protection, safety, volume are little.Wherein, the deep-UV light-emitting diode of wavelength between 220 ~ 350nm has important application in fields such as biologic medical, authentication, water and air purifications.
Compared with blue-ray LED, current deep-UV light-emitting diode external quantum efficiency is still on the low side, for AlGaN base deep ultraviolet LED, mainly there is following problem: piezoelectric polarization and the spontaneous polarization strength of (1) AlGaN layer are large, luminescent layer meeting aggressive bend, reduce the compound probability in electronics and hole, cause internal quantum efficiency low; (2) along with Al component rises, the acceptor activation of Mg increases, and causes the hole concentration under cave, room extremely low; (3) along with Al component rises, the contact berrier of metal and AlGaN layer becomes greatly, causes contact resistance to rise; (4) Al atomic mobility is low, and along with the rising of Al component, it is larger that the control of two-dimensional growth becomes difficulty, is difficult to that growth defect density is low, the epitaxial loayer of surfacing, affects the lifting of luminous efficiency.The application of patterned substrate greatly can alleviate the impact of total reflection, increases light extraction efficiency, promotes the luminous efficiency of 1 ~ 2 times; In addition, in order to reduce light absorption, the deep-UV light-emitting diode of high Al contents needs to adopt AlN resilient coating, but due to Al atomic mobility low, adopt traditional growth pattern to be difficult to use AlN resilient coating upper long flat at graphical sapphire substrate (being called for short PSS substrate).
Epitaxial gan layers technique on traditional PSS figure, because the mobility of Ga is higher, easily migrate to the growth of minimum energy place, therefore grown buffer layer is only at PSS bottom grown, then control low temperature, high pressure growth use GaN layer first grows along three-dimensional, adopt the growing method of high temperature (growth temperature is generally more than 1250 DEG C), low pressure and control V/III to control to turn to two-dimentional lateral growth again, PSS substrate is filled and led up.And adopt the MOCVD of Conventional cryogenic (lower than 1150 DEG C) to carry out epitaxial growth AlN, general employing pulse ald carrys out plain film Sapphire Substrate extension AlN film, or improved the evenness (Chinese patent CN101603172A) of AlN film of extension in plain film Sapphire Substrate as surfactant by TMIn, but because the mobility of Al atom is lower, use conventional methods in PSS substrate Epitaxial growth AlN film difficulty very large, Al atom cannot obtain enough energy transfers and deposit to minimum energy point again, growth non-selectivity, the hexagonal column of the complete AlN film of epitaxial growth in projection one by one, be difficult to obtain smooth epitaxial surface.Therefore the epitaxial structure and the growing method thereof that propose a kind of new iii-v nitride is necessary.
Summary of the invention
The invention provides a kind of structure and method thereof of extension iii-v nitride in patterned substrate, adopt TMIn/Cp2Mg simultaneously or the method for the Enhanced mobility alternately passed into, promote the mobility of Al atom, first at the fabric of patterned substrate growing AIN resilient coating, and then Lateral Deposition AlN film, promote the laterally overgrown speed of AlN, AlN film is merged on the top of patterned substrate, thus form the AlN resilient coating with air layer gap, and then improve the growth quality of follow-up iii-v nitride layer, improving luminous efficiency, be applicable to and make AlGaN base deep-UV light-emitting diode.
Smooth AlN resilient coating has the following advantages: one, provide even curface, is conducive to the extension of follow-up iii-v nitride layer, and namely smooth AlN resilient coating can play good cushioning effect; Two, this structure can adopt MOCVD method, MBE method or HVPE method homepitaxy mode original position to be formed, and the outer Yanzhong that can be fused to iii-v nitride is easily gone.
According to a first aspect of the invention, the epitaxial structure of iii-v nitride, comprise: patterned substrate, the iii-v nitride layer being positioned at the AlN resilient coating on patterned substrate and being positioned on AlN resilient coating, it is characterized in that: bottom the fabric pattern filling substrate of described AlN resilient coating, and and form air layer gap between patterned substrate side, can stress between release profiles substrate and iii-v nitride layer, and the upper surface of AlN resilient coating still keeps roughly smooth, for improving the epitaxial quality of iii-v nitride layer, reduce lattice defect, improving extraction efficiency.
Further, the thickness of described AlN resilient coating is 0.5 ~ 5 μm.
Further, the thickness of described fabric is not less than the height of patterned substrate.
Further, described graphic substrate material is sapphire, silicon, carborundum or gallium nitride.
Further, described iii-v nitride layer is AlN, GaN, Al
xga
1-xn, Al
xin
1-xn, In
yga
1-yn or (Al
xga
1-x)
1-yin
ythe single or multiple lift structures such as N, wherein 0<x<1,0<y<1.
According to a second aspect of the invention, the growing method of iii-v nitride epitaxial structure, comprises step: provide a patterned substrate; The fabric of growing AIN resilient coating in described patterned substrate, its growth course is covered to the top of patterned substrate gradually from the bottom of patterned substrate, makes fabric upper surface be tending towards smooth; Continued growth AlN resilient coating on described fabric, until upper surface is roughly smooth; Described roughly smooth AlN resilient coating grows iii-v nitride layer, thus improves the epitaxial quality of iii-v nitride layer, reduce lattice defect, improving extraction efficiency.
In certain embodiments, the fabric of described AlN resilient coating is formed by following steps:
(1) reative cell growth temperature is 850 ~ 950 DEG C, and pressure is 500Torr, passes into TMAl source in advance, and deposition one deck Al atom, because Al atomic mobility is lower, covers to randomness each position of patterned substrate;
(2) temperature of reative cell is risen to 1050 DEG C, reative cell pressure drop to 100 ~ 200Torr, pass into TMIn source and Cp2Mg source, In/Mg is as surface mobility reinforcing agent, can the surface mobility of REINFORCED Al atom and epitaxial lateral overgrowth speed, Al atom is moved gradually and is focused to the bottom of the patterned substrate of minimum energy;
(3) keep reaction chamber temperature to be 1050 DEG C, reative cell pressure is 100Torr, then passes into NH
3carry out nitrogen treatment, growing AIN nucleating layer;
(4) reaction chamber temperature is risen to 1150 DEG C, reative cell pressure drop to 50 ~ 100Torr, passes into TMAl/NH
3gas, continued growth AlN thin layer, AlN film is made to carry out epitaxial lateral overgrowth, because the longitudinal growth speed of AlN is higher than lateral growth speed (longitudinal direction/side direction speed ratio is 8 ~ 20), lateral growth speed is slower, after AlN merges above patterned substrate, AlN does not merge with the inclined-plane of patterned substrate, thus air layer gap in an inverted cone;
(5) using above-mentioned (1) ~ (4) step as the cycle, cycling deposition, up deposits bottom patterned substrate, until epitaxial lateral overgrowth carries out the merging of AlN resilient coating to above position, patterned substrate top, makes fabric upper surface be tending towards smooth.
Further, in the loop cycle growth forming process of the fabric of described AlN resilient coating, due to two-dimentional lateral growth, partial dislocation can be made to bend, and while epitaxial lateral overgrowth, coring and increment is carried out in the more difficult side in patterned substrate of AlN resilient coating, thus form air layer gap, effectively can reduce the generation of dislocation, reduce dislocation density, improve lattice quality.
Further, the TMIn source in described step (2) and the mode that passes in Cp2Mg source to pass into or gradual change passes into for passing into continuously or being interrupted.
Further, in described step (5), cycle growth thickness is 1 ~ 5nm, and cycling deposition periodicity is 200 ~ 2000.
Further, after forming the fabric of AlN resilient coating, continued growth AlN resilient coating on described fabric, until upper surface is roughly smooth; Then, further extension iii-v nitride, iii-v nitride comprises AlN, GaN, Al
xga
1-xn, Al
xin
1-xn, In
yga
1-yn or (Al
xga
1-x)
1-yin
ythe single or multiple lift structures such as N, wherein 0<x<1,0 <y<1.
In addition, aforementioned epitaxial growth regime includes but not limited to MOCVD method, MBE method and HVPE method homepitaxy growth pattern.
Accompanying drawing explanation
Fig. 1 is the structural representation of extension iii-v nitride in patterned substrate that the present invention proposes.
Fig. 2 ~ Fig. 7 is each step schematic diagram of the growth pattern of AlN resilient coating of the present invention.
Fig. 8 is that each gas source flow that the formation AlN resilient coating of embodiment 1 is corresponding changes schematic diagram in time.
Fig. 9 is that each gas source flow that the formation AlN resilient coating of embodiment 2 is corresponding changes schematic diagram in time.
Figure 10 is that each gas source flow that the formation AlN resilient coating of embodiment 3 is corresponding changes schematic diagram in time.
Figure 11 is that each gas source flow that the formation AlN resilient coating of embodiment 4 is corresponding changes schematic diagram in time.
Illustrate: 10: patterned substrate; 20:AlN resilient coating; The fabric of 21:AlN resilient coating; 21a:Al atom; 21b: air layer gap; 30:III-V group iii nitride layer.
Embodiment
The structural representation of extension iii-v nitride in patterned substrate proposed by the invention is shown in accompanying drawing 1.As shown in Figure 1, iii-v nitride epitaxial structure, comprising: the bottom is patterned substrate 10, and sapphire selected by backing material; Be positioned at the AlN resilient coating 20 on patterned substrate 10, form air layer gap 21b between the fabric 21a of described AlN resilient coating 20 and patterned substrate 10 side, and the upper surface of AlN resilient coating 20 still keep roughly smooth; And the iii-v nitride layer 30 be positioned on AlN resilient coating 20, iii-v nitride can comprise AlN, GaN, Al
xga
1-xn, Al
xin
1-xn, In
yga
1-yn or (Al
xga
1-x)
1-yin
ythe single or multiple lift structures such as N, wherein 0<x<1,0<y<1.Because this iii-v nitride layer 30 is by obtaining on the roughly smooth AlN resilient coating 20 in surface, therefore improving the epitaxial quality of iii-v nitride layer, reduce lattice defect, improving extraction efficiency.
The present invention will be further described to adopt MOCVD epitaxy growth pattern below.
As described in Figure 1, a patterned substrate 10 is first provided, material selection sapphire, base diameter is 0.5 ~ 5 μm, Space(interval) be 100 ~ 1000nm, be highly 0.5 ~ 3 μm, the preferred base of the present embodiment 0.9 μm, Space is 100nm, is highly the patterned substrate of 0.6 μm; Then patterned substrate 10 is placed in MOCVD device (not shown), the fabric 21 of growing AIN resilient coating in described patterned substrate 10, be covered to the top of patterned substrate from the bottom of patterned substrate 10 gradually, make fabric upper surface be tending towards smooth; Continued growth AlN resilient coating 20 on described fabric 21, until upper surface is roughly smooth; Described roughly smooth AlN resilient coating 20 grows iii-v nitride layer 30, thus improves the epitaxial quality of iii-v nitride layer, reduce lattice defect, improving extraction efficiency.
Growth pattern below in conjunction with accompanying drawing 2 ~ 7 pairs of AlN resilient coatings is described further.
In MOCVD device, conventional Al source and N source are respectively TMAl and NH
3, and In source and Mg source are respectively TMIn source and Cp2Mg source.
(1) as shown in Figure 2, reative cell growth temperature is 850 ~ 950 DEG C, and pressure is 500Torr, first passes into TMAl source in advance, and deposition one deck Al atom 21a, because Al atomic mobility is lower, randomness can cover each position of patterned substrate 10 unevenly;
(2) as shown in Figures 3 and 4, the temperature of reative cell is risen to 1050 DEG C, reative cell pressure drop to 100 ~ 200Torr, pass into TMIn source and Cp2Mg source again, In/Mg is as surface mobility reinforcing agent, can the surface mobility of REINFORCED Al atom 21a and epitaxial lateral overgrowth speed, Al atom is moved gradually and is focused to the bottom of the patterned substrate 10 of minimum energy;
(3) as shown in Figure 5, keep reaction chamber temperature to be 1050 DEG C, reative cell pressure is 100Torr, then passes into NH
3carry out nitrogen treatment, growing AIN nucleating layer;
(4) as shown in Figure 6, reaction chamber temperature is risen to 1150 DEG C, reative cell pressure drop to 50 ~ 100Torr, passes into TMAl/NH
3gas, continued growth AlN thin layer, AlN film is made to carry out epitaxial lateral overgrowth, because the longitudinal growth speed of AlN is higher than lateral growth speed (longitudinal direction/side direction speed ratio is 8 ~ 20), lateral growth speed is slower, after AlN merges above patterned substrate, AlN does not merge with the inclined-plane of patterned substrate, thus air layer gap in an inverted cone;
(5) cycling deposition is carried out using above-mentioned (1) ~ (4) step as the cycle, each cycle growth thickness is 1 ~ 5nm, cycling deposition periodicity is 200 ~ 2000, up deposit gradually bottom patterned substrate thus, until epitaxial lateral overgrowth carries out the merging of AlN resilient coating to above position, patterned substrate top, namely the thickness of fabric is not less than the height of patterned substrate, makes fabric 21 upper surface of AlN resilient coating be tending towards smooth;
(6) as shown in Figure 7, after the fabric 21 forming AlN resilient coating, continued growth AlN resilient coating 20 on described fabric, until upper surface is roughly smooth.
As shown in Fig. 2 ~ Fig. 7, in the loop cycle growth forming process of the fabric 21 of AlN resilient coating, due to two-dimentional lateral growth, partial dislocation can be made to bend, while epitaxial lateral overgrowth, coring and increment is carried out in the more difficult side in patterned substrate of AlN resilient coating, thus form air layer gap 21b, and can stress between release profiles substrate and iii-v nitride layer, effectively reduce the generation of dislocation, reduce dislocation density, improve lattice quality.In addition, because air layer gap 21b is formed between AlN resilient coating and the side of patterned substrate, it is surrounded on each unit figure of whole patterned substrate, can more effectively improving extraction efficiency.
embodiment 1
As shown in Figure 8, the chamber pressure of MOCVD device is evacuated to 50Torr, temperature rises to 1000 DEG C, and first pre-logical TMAl source (time is 5s), patterned substrate overlays one deck Al atom; Be taken up in order of priority the TMIn source/Cp2Mg source that passes into (time is 5s/5s) again, In/Mg can the surface mobility of REINFORCED Al atom and epitaxial lateral overgrowth speed as surface mobility reinforcing agent, then passes into NH
3gas (time is 5s) carries out Nization process, growing AIN nucleating layer; Finally, more simultaneously TMAl/NH is passed into
3gas (time is 5s), growing AIN resilient coating; So carry out cycling deposition with each cycle (time is for 25s), until the thickness of growing AIN resilient coating is 2 μm.Relative to being used alone In as surfactant, adopting In/Mg as surface mobility reinforcing agent, more effectively can promote the surface mobility of Al atom, being beneficial to and obtaining smooth AlN resilient coating.
Grown the AlN resilient coating of 2 μm of thickness by above-mentioned processing step after, as shown in Figure 1, further extension iii-v nitride, namely form iii-v nitride layer 30, iii-v nitride comprises AlN, GaN, Al
xga
1-xn, Al
xin
1-xn, In
yga
1-yn or (Al
xga
1-x)
1-yin
ythe single or multiple lift structures such as N, wherein 0<x<1,0<y<1.Adopt the present invention to grow the epitaxial structure of the iii-v nitride obtained, be particularly suitable for making AlGaN base deep-UV light-emitting diode.
embodiment 2
As shown in Figure 9, as different from Example 1, the In/Mg surface mobility reinforcing agent of the present embodiment passes into Cp2Mg source and the acquisition of TMIn source for being taken up in order of priority, and the time is respectively 5s.
embodiment 3
As shown in Figure 10, as different from Example 1, the In/Mg surface mobility reinforcing agent of the present embodiment obtains for passing into Cp2Mg source and TMIn source respectively continuously simultaneously, and the time is 10s.
embodiment 4
As shown in figure 11, as different from Example 1, the In/Mg surface mobility reinforcing agent of the present embodiment obtains for passing into gradual change Cp2Mg source and TMIn source respectively simultaneously, and it is that first gradual change is risen the decline of gradual change again that gradual change passes into mode.
Above execution mode is only for illustration of the present invention; and be not intended to limit the present invention; those skilled in the art; without departing from the spirit and scope of the present invention; various modification and variation can be made to the present invention; therefore all equivalent technical schemes also belong to category of the present invention, and scope of patent protection of the present invention should be looked Claims scope and be limited.
Claims (10)
1. the epitaxial structure of an iii-v nitride, comprise: patterned substrate, the iii-v nitride layer being positioned at the AlN resilient coating on patterned substrate and being positioned on AlN resilient coating, it is characterized in that: described AlN resilient coating adopts simultaneously or alternately passes into the Enhanced mobility technology of TMIn/Cp2Mg, Al atomic migration to the bottom of patterned substrate is made to carry out nucleation, bottom fabric pattern filling substrate, and and form air layer gap between patterned substrate side, and the upper surface of AlN resilient coating still keeps roughly smooth, for improving the epitaxial quality of iii-v nitride layer, reduce lattice defect, improving extraction efficiency.
2. the epitaxial structure of a kind of iii-v nitride according to claim 1, is characterized in that: the thickness of described AlN resilient coating is 0.5 ~ 5 μm.
3. the epitaxial structure of a kind of iii-v nitride according to claim 1, is characterized in that: the thickness of described fabric is not less than the height of patterned substrate.
4. the epitaxial structure of a kind of iii-v nitride according to claim 1, is characterized in that: described graphic substrate material is sapphire, silicon, carborundum or gallium nitride.
5. the epitaxial structure of a kind of iii-v nitride according to claim 1, is characterized in that: described iii-v nitride layer is AlN, GaN, Al
xga
1-xn, Al
xin
1-xn, In
yga
1-yn or (Al
xga
1-x)
1-yin
yn single or multiple lift structure, wherein 0<x< 1,0<y<1.
6. a growing method for iii-v nitride epitaxial structure, comprises step: provide a patterned substrate; The fabric of growing AIN resilient coating in described patterned substrate, its growth course is covered to the top of patterned substrate gradually from the bottom of patterned substrate, fabric upper surface is made to be tending towards smooth, due to two-dimentional lateral growth, partial dislocation can be made to bend, while epitaxial lateral overgrowth, coring and increment is carried out in the more difficult side in patterned substrate of AlN resilient coating, thus forms air layer gap between described fabric and patterned substrate side; Continued growth AlN resilient coating on described fabric, until upper surface is roughly smooth; Described roughly smooth AlN resilient coating grows iii-v nitride layer, thus improves the epitaxial quality of iii-v nitride layer, reduce lattice defect, improving extraction efficiency.
7. the growing method of a kind of iii-v nitride epitaxial structure according to claim 1, is characterized in that: the further comprising the steps of formation of fabric of described AlN resilient coating:
(1) pass into TMAl source in advance, deposition one deck Al atom, because Al atomic mobility is lower, covers to randomness each position of patterned substrate;
(2) pass into TMIn source and Cp2Mg source, using In/Mg as surface mobility reinforcing agent, the surface mobility of REINFORCED Al atom and epitaxial lateral overgrowth speed, make Al atom move gradually and be focused to the bottom of the patterned substrate of minimum energy;
(3) NH is passed into
3carry out nitrogen treatment, growing AIN nucleating layer;
(4) TMAl/NH is passed into
3gas, continued growth AlN thin layer, makes AlN film carry out epitaxial lateral overgrowth, because the longitudinal growth speed of AlN is higher than lateral growth speed, lateral growth speed is comparatively slow, after AlN merges above patterned substrate, AlN does not merge with the inclined-plane of patterned substrate, thus air layer gap in an inverted cone;
(5) using above-mentioned (1) ~ (4) as the cycle, cycling deposition, up deposits bottom patterned substrate, until epitaxial lateral overgrowth carries out the merging of AlN resilient coating to above position, patterned substrate top, makes fabric upper surface be tending towards smooth.
8. the growing method of a kind of iii-v nitride epitaxial structure according to claim 7, is characterized in that: the growth temperature of the fabric of described AlN resilient coating is 850 ~ 1150 DEG C.
9. the growing method of a kind of iii-v nitride epitaxial structure according to claim 7, is characterized in that: the TMIn source in described step (2) and the mode that passes in Cp2Mg source to pass into or gradual change passes into for passing into continuously or being interrupted.
10. the growing method of a kind of iii-v nitride epitaxial structure according to claim 7, is characterized in that: in described step (5), cycle growth thickness is 1 ~ 5nm, and the cycling deposition cycle is 200 ~ 2000.
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