CN108878304A - Leakage tests structure and leakage tests method - Google Patents
Leakage tests structure and leakage tests method Download PDFInfo
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- CN108878304A CN108878304A CN201810684403.0A CN201810684403A CN108878304A CN 108878304 A CN108878304 A CN 108878304A CN 201810684403 A CN201810684403 A CN 201810684403A CN 108878304 A CN108878304 A CN 108878304A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/30—Structural arrangements specially adapted for testing or measuring during manufacture or treatment, or specially adapted for reliability measurements
Abstract
The present invention relates to a kind of leakage tests structure and leakage tests method, the leakage tests structure includes：Semiconductor substrate；Adjacent the first transistor and second transistor, is formed in the semiconductor substrate, the first source-drain electrode of the first transistor and the second source-drain electrode of second transistor it is adjacent and by an isolation structure be isolated；Grid structure is tested, including test grid, the test grid structure are located at the isolation structure surface.
Description
Technical field
The present invention relates to technical field of semiconductors more particularly to a kind of leakage tests structures and leakage tests method.
Background technique
It is required to be isolated by isolation structure between semiconductor devices, such as fleet plough groove isolation structure.Isolation structure
Isolation performance the performance of product is had a major impact.In the prior art, by leakage tests to the isolation performance of isolation structure
It is detected.
In the prior art, when carrying out leakage tests to the isolation structure between adjacent transistor, usually in isolation junction
Apply voltage on source-drain electrode between two transistors of structure two sides, to detect leakage current.The shortcomings that prior art is to work as leakage
When electric current is bigger than normal, it is not easy to which judgement is which step process results in biggish leakage current, depth, the isolation junction of isolation structure extremely
Implantation dosage of Doped ions in the source-drain electrode of the adjacent transistor of structure two sides etc. may cause biggish leakage current.
How the isolation performance of isolation structure is accurately detected, and accurate judgement electric leakage reason, is urgently to be resolved at present
The problem of.
Summary of the invention
The technical problem to be solved by the invention is to provide a kind of leakage tests structure and leakage tests methods, with accurate
Detect the isolation performance and judgement electric leakage reason of isolation structure.
To solve the above problems, the present invention provides a kind of leakage tests structures, including：Semiconductor substrate；Adjacent
One transistor and second transistor are formed in the semiconductor substrate, the first source-drain electrode of the first transistor and second
Second source-drain electrode of transistor is adjacent and is isolated by an isolation structure；Test grid structure, including test grid, the test grid
Structure is located at the isolation structure surface.
Optionally, the isolation structure is fleet plough groove isolation structure.
Optionally, first source-drain electrode is identical with the doping type of second source-drain electrode.
Optionally, the test grid structure further includes the side wall positioned at the test gate lateral wall surface.
Optionally, the width of the test grid structure is less than or equal to the width of the isolation structure.
Optionally, the test grid structure is in the projection planar of isolation structure surface institute, be fully located at described in
In isolation structure surface.
To solve the above-mentioned problems, technical solution of the present invention also provides a kind of leakage tests method, including：Electric leakage is provided
Test structure；Test gate voltage is applied to the test grid structure of the leakage tests structure；The is applied to first source-drain electrode
One voltage；Second voltage is applied to second source-drain electrode.
Optionally, including：Threshold voltage testing procedure is carried out, the threshold voltage testing procedure further comprises：It keeps
The first voltage is identical as second voltage, and the test gate voltage gradually rises from 0V, first source-drain electrode and the second source
Test gate voltage when drain electrode conducting is threshold voltage.
Optionally, in the threshold voltage testing procedure, the test gate voltage is gradually risen from 0V to 5V, and described
One voltage and the absolute value of second voltage are less than or equal to 5V.
Optionally, including：Leakage tests step is carried out, the leakage tests step further comprises：Keep described second
Voltage is constant, so that the first voltage is gradually changed in a voltage range with a fixed step value, test described first
Leakage current between source-drain electrode and the second source-drain electrode.
Optionally, in the leakage tests step, the voltage range is -1.5V~3.5V.
Optionally, in the leakage tests step, the step value is 0.1V~0.3V.
Optionally, the leakage tests step further includes：The voltage value for changing test gate voltage, in different test gate voltages
In the case where value, the leakage current is tested.
Optionally, the absolute value of the test gate voltage is less than or equal to 5V.
Leakage tests structure of the invention has isolation structure, and the isolation junction between the source-drain electrode of adjacent transistor
Structure surface has test grid structure, and the test grid structure, isolation structure and the source-drain electrode of isolation structure two sides constitute one and survey
Try transistor.It can be carried out test by the electrical property to the test transistor, may be implemented to the electric leakage between adjacent transistor
Test.
Detailed description of the invention
Fig. 1 is the overlooking structure diagram of the leakage tests structure of the embodiment of the invention；
Fig. 2 is the schematic diagram of the section structure of the leakage tests structure of the embodiment of the invention；
Fig. 3 is that the leakage tests structure of the embodiment of the invention carries out the structural schematic diagram of leakage tests.
Specific embodiment
The specific embodiment of leakage tests structure provided by the invention and leakage tests method is done with reference to the accompanying drawing
It is described in detail.
Fig. 1 and Fig. 2 are please referred to, Fig. 1 is the schematic top plan view of the leakage tests structure of the embodiment of the invention, figure
2 be the schematic diagram of the section structure of leakage tests structure.
The leakage tests structure, including：Semiconductor substrate 100；Adjacent the first transistor 110 and second transistor
120, it is formed in the semiconductor substrate 100, the first source-drain electrode 112 and second transistor 120 of the first transistor 110
The second source-drain electrode 122 it is adjacent and by an isolation structure 130 be isolated；Test grid structure, including test grid 131, the survey
Examination grid structure is located at 130 surface of isolation junction.
The leakage can be formed in the test zone of wafer while forming semiconductor devices on the functional area of wafer
Electrical testing structure.The first transistor 110, second transistor 120 and the isolation structure 130 of the leakage tests structure are and function
Can semiconductor devices forming process on region it is synchronous so that the first transistor 110, second transistor 120 and
The parameter of isolation structure 130 and the parameter of semiconductor devices are consistent, therefore, pass through the adjacent crystal tested in the test structure
Drain conditions between pipe, it is known that the drain conditions between adjacent transistor in semiconductor devices.
The isolation structure 130 is insulation isolation structure, including insulating dielectric materials.Specifically, in the embodiment, institute
Stating isolation structure 130 is fleet plough groove isolation structure, including the shallow trench being formed in the semiconductor substrate 100, and filling
The insulating layer of the shallow trench.The material of the insulating layer is silica and silicon oxide carbide or other insulating dielectric materials.?
In other specific embodiments, the isolation structure 130 can also be other isolation structures with insulating medium layer.
The first transistor 110 includes first between first grid 111, first grid 111 and semiconductor substrate 100
Gate dielectric layer 211, and the doped region in the semiconductor substrate 100 of 111 two sides of first grid, respectively as source electrode
And drain electrode.In the specific embodiment, the source electrode and drain electrode of the first transistor be can be interchanged, and not influence specific embodiment
Particular technique effect, therefore the doped region in the semiconductor substrate 100 of 111 two sides of first grid is named as first
Source-drain electrode 112.The sidewall surfaces of the first grid 111 are also formed with 212 (not shown in figure 1) of the first side wall, and described first
It further include the first lightly doped district 213 in the semiconductor substrate 100 of 111 two sides of grid.The first grid of the first transistor 110
111 surfaces are also formed with first grid contact layer 113 (being not shown in Fig. 2), and 112 surface of the first source-drain electrode is also formed with
One source-drain electrode contact layer 114 (being not shown in Fig. 2).The first source-drain electrode contact layer 114, first grid contact layer can be passed through
113 are electrically connected with first source-drain electrode 112, the foundation of first grid 111 respectively.
The second transistor 120 includes second between second grid 121, second grid 121 and semiconductor substrate 100
Gate dielectric layer 221, and the doped region in the semiconductor substrate 100 of 121 two sides of second grid, respectively as source electrode
And drain electrode.In the specific embodiment, the source electrode and drain electrode of the second transistor be can be interchanged, and not influence specific embodiment
Particular technique effect, therefore the doped region in the semiconductor substrate 100 of 121 two sides of second grid is named as second
Source-drain electrode 122.The sidewall surfaces of the second grid 121 are also formed with 222 (not shown in figure 1) of the second side wall, and described second
It further include the second lightly doped district 223 in the semiconductor substrate 100 of 121 two sides of grid.The second grid of the second transistor 120
121 surfaces are also formed with second grid contact layer 123 (being not shown in Fig. 2), and 122 surface of the second source-drain electrode is also formed with
Two source-drain electrode contact layers 124 (being not shown in Fig. 2).The second source-drain electrode contact layer 124, second grid contact layer can be passed through
123 are electrically connected with second source-drain electrode 122, the foundation of second grid 121 respectively.
In a specific embodiment, the first transistor 110 and second transistor 120 are formed simultaneously, and are identical
The transistor of type, first source-drain electrode 112 is identical with the doping type of second source-drain electrode 122, and first source
The doping concentration of drain electrode 112 and second source-drain electrode 122 is also identical.In other specific embodiments, first source and drain
Pole 112 is identical with the doping type of second source-drain electrode 122, but the first source-drain electrode 112 and second source-drain electrode 122
Doping concentration is different.In this specific embodiment, the first transistor 110 and second transistor 120 are N-type crystal
Pipe.
The isolation structure 130 is between adjacent the first source-drain electrode 121 and the second source-drain electrode 122, with described first
Source-drain electrode 112 and the second source-drain electrode 122 adjoin.
The test grid structure includes test grid 131, positioned at the surface of the isolation structure 130.The specific embodiment party
In formula, the sidewall surfaces of the test grid 131 are also formed with side wall 231.Test grid positioned at 130 surface of isolation structure
The width of structure is less than or equal to the width of the isolation structure 130, so that the test grid 131 and side wall 231 are respectively positioned on
The surface of the isolation structure 130.In a specific embodiment, the test grid structure is in 130 table of isolation structure
Face projection planar, be fully located in 130 surface of isolation structure.The test grid 131 and the equal position of side wall 231
It can be made in the surface of the isolation structure 130 to avoid the forming region to first source-drain electrode 112, the second source-drain electrode 122
At influence, so that the isolation structure 130 is close to first source-drain electrode 112, the second source-drain electrode 122.
In a specific embodiment of the invention, the isolation junction between first source-drain electrode 121 and the second source-drain electrode 122
The width C D of structure 130 may range from 160nm~500nm, being isolated between the adjacent transistor in semiconductor device area
Structure width is consistent, can be specifically designed according to device performance requirements.In a specific embodiment, the isolation junction
The width C D of structure 130 is 160nm, and the width of test grid 132 is 75nm, and the bottom width of side wall 231 is 42nm；In another tool
In body embodiment, the width C D of the isolation structure 130 is 300nm, and the width of test grid 132 is 215nm, side wall 231
Bottom width be 42nm；In another specific embodiment, the width C D of the isolation structure 130 is 400nm, tests grid
132 width is 315nm, and the bottom width of side wall 231 is 42nm；In another specific embodiment, the isolation structure 130
Width C D be 500nm, the width of test grid 132 is 415nm, and the bottom width of side wall 231 is 42nm.Different in width every
From the isolation performance that structure 130 can be used for testing different in width isolation structure, with confirm the electric leakage between adjacent transistor with
Relationship between isolation structure width.
132 surface of test grid is also formed with test gate contact layer 132 (being not shown in Fig. 2), passes through the survey
Examination gate contact layer 132 can be formed with the test grid 132 and is electrically connected, and apply test voltage.
Test grid 132, isolation structure 130 and first source-drain electrode positioned at 130 two sides of isolation structure
112, the second source-drain electrode 122 constitutes a test transistor 230, and the grid of the test transistor 230 is the test grid
132, first source-drain electrode 112, the second source-drain electrode 122 can respectively as the source electrode and drain electrode of the test transistor 230,
Such as first source-drain electrode 112 is used as drain electrode as source electrode, the second source-drain electrode 122；Or 112 conduct of the first source-drain electrode
Drain electrode, the second source-drain electrode 122 are used as source electrode.Gate dielectric layer of the isolation structure 130 as the test transistor 230.It is logical
Situations such as crossing the threshold voltage for testing the test transistor 230, leakage current, to realize to the electric leakage feelings between adjacent transistor
Condition is tested.In the specific embodiment, the test transistor 230 is NMOS transistor.
Above-mentioned leakage tests structure has isolation structure, and the isolation structure table between the source-drain electrode of adjacent transistor
Face has test grid structure, and it is brilliant that the test grid structure, isolation structure and the source-drain electrode of isolation structure two sides constitute a test
Body pipe.It can be carried out test by the electrical property to the test transistor, may be implemented to the leakage tests between adjacent transistor.
A specific embodiment of the invention also provides a kind of test method of above-mentioned leakage tests structure.
Referring to FIG. 3, for structural schematic diagram of leakage tests structure during leakage tests shown in Fig. 2.
Leakage tests structure as shown in Figure 2 is provided, test grid are applied to the test grid structure of the leakage tests structure
Voltage Vg；First voltage V1 is applied to first source-drain electrode 112；Second voltage V2 is applied to second source-drain electrode 122.It can
By being formed in the test gate contact layer 132 (please referring to Fig. 1) for testing 131 surface of grid to the test grid
131 apply test gate voltage Vg, and the first source-drain electrode contact layer 114 by being formed in 112 surface of the first source-drain electrode (please join
Examine Fig. 1) apply first voltage V1 to first source-drain electrode 112, by be formed in 122 surface of the second source-drain electrode second
Source-drain electrode contact layer 124 (please referring to Fig. 1) applies second voltage V2 to second source-drain electrode 122.
In the test gate voltage Vg application and the test grid 131.By in the test grid 131, the first source
Apply voltage respectively on the 112, second source-drain electrode 122 of drain electrode, test can be can be carried out to the electrical property of test transistor.
By the way that the test gate voltage Vg, the adjustment of first voltage V1, second voltage V2 can be to test transistors
The electrical parameters such as threshold voltage, leakage current are tested.
In the specific embodiment, including：Threshold voltage testing procedure is carried out, the threshold voltage testing procedure is further
Including：Keep the first voltage V1 identical as second voltage V2, the test gate voltage Vg gradually rises from 0V, and described first
Test gate voltage when source-drain electrode V1 and the second source-drain electrode V2 is connected is threshold voltage.
Due to the threshold voltage and the thickness of gate dielectric layer of transistor, gate dielectric layer bottom substrate in doping situation it is equal
It is related.In the specific embodiment, gate dielectric layer of the isolation structure 130 as leakage tests structure, the threshold voltage
It is related to the dopant states of 130 bottom of the thickness of isolation structure 130 and isolation structure, it, can by testing the threshold voltage
To judge the injection state of 130 bottom of isolation structure, injected between state and transistor with 130 bottom of detection and isolation structure
The association of leakage current.
In carrying out threshold voltage testing procedure, the test gate voltage Vg is gradually risen from 0V to 5V, first electricity
The absolute value of V1 and second voltage V2 is pressed to be less than or equal to 5V.In the specific embodiment, V1=3V, V2=3V, Vg is in 0~5V model
It is gradually changed in enclosing, to obtain threshold voltage.In other specific embodiments, the first voltage V1, second voltage V2
It can be other voltage values, and be adjusted according to the doping type of first source-drain electrode 112, the second source-drain electrode 122.
In the specific embodiment, the leakage tests method further includes：Carry out leakage tests step, the leakage tests
Step further comprises：Keep the second voltage V2 constant, so that the first voltage V1 value is in a voltage range with one
Fixed step value gradually changes, and tests the leakage current between first source-drain electrode and the second source-drain electrode.It is specific real at one
It applies in mode, the second voltage V2=3V, first voltage V1 are adjusted within the scope of -1.5V~3.5V, the stepping of adjustment
Value is 0.1V.In other specific embodiments, the absolute value of the second voltage V2 is less than or equal to 5V, and the step value is
0.1V~0.3V.The step value is smaller, more detailed for leakage current test data, is more conducive to analysis electric leakage reason.
During carrying out leakage tests, the test gate voltage Vg absolute value applied on the test grid 131 is less than etc.
In 5V.During leakage tests, the voltage value of test gate voltage Vg can also be changed, the different test gate voltage values the case where
Under, test the leakage current.In this specific embodiment, gate voltage Vg=0, Vg=3V and Vg=-3V are being tested respectively,
In the case of three kinds, the leakage current between first source-drain electrode 121, the second source-drain electrode 122 is tested.With the test
The variation of gate voltage Vg, the distribution of charges of adjustable 130 bottom of isolation structure, monitoring electric leakage size.
It is tested according to above-mentioned threshold voltage, during leakage tests, the test parameter structure under different condition can integrate
Judgement electric leakage reason, accurate judgement electric leakage reason.
It, can also be by adjusting the test gate voltage for the test transistor in other specific embodiments
Vg, first voltage V1 and second voltage V2 carry out otherwise electric performance test, further to obtain more test ginsengs
Number, so that leakage tests result is more accurate.
The leakage tests structure that above-mentioned leakage tests method uses has isolation junction between the source-drain electrode of adjacent transistor
Structure, and the isolation structure surface has a test grid structure, the test grid structure, isolation structure and isolation structure two sides
Source-drain electrode constitutes a test transistor.It can be carried out test by the electrical property to the test transistor, realize to adjacent transistor
Between leakage tests.
The above is only a preferred embodiment of the present invention, it is noted that for the ordinary skill people of the art
Member, various improvements and modifications may be made without departing from the principle of the present invention, these improvements and modifications also should be regarded as
Protection scope of the present invention.
Claims (14)
1. a kind of leakage tests structure, which is characterized in that including：
Semiconductor substrate；
Adjacent the first transistor and second transistor, is formed in the semiconductor substrate, and the first of the first transistor
Second source-drain electrode of source-drain electrode and second transistor is adjacent and is isolated by an isolation structure；
Grid structure is tested, including test grid, the test grid structure are located at the isolation structure surface.
2. leakage tests structure according to claim 1, which is characterized in that the isolation structure is shallow trench isolation knot
Structure.
3. leakage tests structure according to claim 1, which is characterized in that first source-drain electrode and second source and drain
The doping type of pole is identical.
4. leakage tests structure according to claim 1, which is characterized in that the test grid structure further includes positioned at described
Test the side wall on gate lateral wall surface.
5. leakage tests structure according to claim 1, which is characterized in that the width of the test grid structure is less than or waits
In the width of the isolation structure.
6. leakage tests structure according to claim 1, which is characterized in that the test grid structure is in the isolation structure
Surface projection planar, be fully located in the isolation structure surface.
7. a kind of leakage tests method, which is characterized in that including：
Such as leakage tests structure described in any one of claims 1 to 6 is provided；
Test gate voltage is applied to the test grid structure of the leakage tests structure；
First voltage is applied to first source-drain electrode；
Second voltage is applied to second source-drain electrode.
8. leakage tests method according to claim 7, which is characterized in that including：Carry out threshold voltage testing procedure, institute
Stating threshold voltage testing procedure further comprises：Keep the first voltage identical as second voltage, the test gate voltage is certainly
0V gradually rises, and test gate voltage when first source-drain electrode and the second source-drain electrode are connected is threshold voltage.
9. leakage tests method according to claim 8, which is characterized in that in the threshold voltage testing procedure, institute
It states test gate voltage to gradually rise from 0V to 5V, the absolute value of the first voltage and second voltage is less than or equal to 5V.
10. leakage tests method according to claim 7, which is characterized in that including：Leakage tests step is carried out, it is described
Leakage tests step further comprises：Keep the second voltage constant so that the first voltage in a voltage range with
One fixed step value gradually changes, and tests the leakage current between first source-drain electrode and the second source-drain electrode.
11. leakage tests method according to claim 10, which is characterized in that described in the leakage tests step
Voltage range is -1.5V~3.5V.
12. leakage tests method according to claim 10, which is characterized in that described in the leakage tests step
Step value is 0.1V~0.3V.
13. leakage tests method according to claim 10, which is characterized in that the leakage tests step further includes：Change
The voltage value for becoming test gate voltage tests the leakage current in the case where different test gate voltage values.
14. leakage tests method according to claim 7, which is characterized in that the absolute value of the test gate voltage is less than
Equal to 5V.
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Cited By (1)
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| CN113257790A (en) * | 2021-06-30 | 2021-08-13 | 广州粤芯半导体技术有限公司 | Electric leakage test structure and electric leakage test method |
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| CN1716559A (en) * | 2004-06-28 | 2006-01-04 | 中芯国际集成电路制造(上海)有限公司 | Detecting structure for simultaneously detecting hot carriers of multiple metal-oxide-semiconductor device |
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Application publication date: 20181123 |