CN109100623B - Method for analyzing PN matching state of super junction device - Google Patents
Method for analyzing PN matching state of super junction device Download PDFInfo
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- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
- G01R31/12—Testing dielectric strength or breakdown voltage ; Testing or monitoring effectiveness or level of insulation, e.g. of a cable or of an apparatus, for example using partial discharge measurements; Electrostatic testing
- G01R31/1227—Testing dielectric strength or breakdown voltage ; Testing or monitoring effectiveness or level of insulation, e.g. of a cable or of an apparatus, for example using partial discharge measurements; Electrostatic testing of components, parts or materials
- G01R31/1263—Testing dielectric strength or breakdown voltage ; Testing or monitoring effectiveness or level of insulation, e.g. of a cable or of an apparatus, for example using partial discharge measurements; Electrostatic testing of components, parts or materials of solid or fluid materials, e.g. insulation films, bulk material; of semiconductors or LV electronic components or parts; of cable, line or wire insulation
- G01R31/129—Testing dielectric strength or breakdown voltage ; Testing or monitoring effectiveness or level of insulation, e.g. of a cable or of an apparatus, for example using partial discharge measurements; Electrostatic testing of components, parts or materials of solid or fluid materials, e.g. insulation films, bulk material; of semiconductors or LV electronic components or parts; of cable, line or wire insulation of components or parts made of semiconducting materials; of LV components or parts
Abstract
The invention discloses a method for analyzing the PN matching state of a super junction device, which comprises the following steps: step one, measuring breakdown voltage under the condition that grid voltage is not applied to a grid; step two, adding grid voltage on the grid and forming channel current, and adjusting the matching state of the super junction structure through channel current injection; then, measuring the corresponding breakdown voltage; adjusting the grid voltage so as to adjust the matching state of the super junction structure and measure the corresponding breakdown voltage, and forming a measurement curve between the matching state of the super junction structure adjusted by the grid voltage and the breakdown voltage of the super junction device; and step four, comparing the measurement curve with a quadratic curve between the PN matching state and the breakdown voltage of the super junction structure to determine the PN matching state of the super junction structure. The invention can analyze and judge the PN matching state in the super junction device.
Description
Technical Field
The present invention relates to a test method for manufacturing a semiconductor integrated circuit, and more particularly, to a method for analyzing a PN matching state of a super junction device.
Background
The super junction is composed of alternately arranged P-type thin layers and N-type thin layers formed in a semiconductor substrate, a depletion layer formed by matching the P-type thin layers, namely P-type columns (P-Pillar), and the N-type thin layers, namely N-Pillar, is used for supporting reverse withstand voltage, and the product with the super junction is a device structure, such as a MOSFET (metal oxide semiconductor field effect transistor) structure, which utilizes the PN charge balance in-vivo surface field reduction (Resurf) technology to improve the reverse breakdown BV of the device and simultaneously keeps smaller on-resistance. The Pillar structure of the PN interval is the biggest characteristic of the super junction. At present, there are two methods for fabricating a Pillar (pilar) between PN, i.e., between a P-type thin layer and an N-type thin layer, such as a P-pilar structure, the first method is obtained by multiple epitaxy and ion implantation, and the second method is fabricated by deep trench (trench) etching and epitaxial Filling (ERI Filling).
The PN charge matching state between the P-type column and the N-type column of the super junction manufactured by the existing method has great influence on the breakdown voltage of the finally formed super junction device, and if the PN charges between the P-type column and the N-type column are completely matched, the breakdown voltage of the super junction device is the maximum; and the breakdown voltage of the super junction device can be reduced due to the reduction of the PN charge matching between the P-type column and the N-type column, namely the breakdown voltage of the super junction device can be reduced no matter the P-type charge concentration of the P-type column is greater than or lower than the N-type charge concentration of the N-type column. Thus, when the breakdown voltage of the actually fabricated super junction device is lowered, it cannot be determined whether the breakdown voltage is caused by the fact that the P-type charge concentration of the P-type column is greater than the N-type charge concentration of the N-type column or the breakdown voltage is caused by the fact that the P-type charge concentration of the P-type column is less than the N-type charge concentration of the N-type column. Therefore, it is very difficult to determine the actual PN matching state of the packaged device and the device having a difference in-plane uniformity. But judging the PN matching state of the super junction device is very important for analyzing the performance of the device and making an improvement plan.
Disclosure of Invention
The technical problem to be solved by the invention is to provide an analysis method for the PN matching state of a super junction device, which can analyze and judge the PN matching state in the super junction device.
In order to solve the technical problem, in the method for analyzing the PN matching state of the super junction device provided by the invention, the super junction device comprises a gate, a drain and a source, a super junction structure consisting of P-type columns and N-type columns which are alternately arranged is arranged in a drift region of the super junction device, a channel with a first conductivity type is arranged, and a quadratic curve relation between the PN matching state of the super junction structure and the breakdown voltage of the super junction device is analyzed by adopting the following steps:
step one, measuring the breakdown voltage of the super junction device under the condition that the grid voltage is not applied to the grid.
Secondly, adding a grid voltage on the grid, wherein the grid voltage is greater than or equal to the threshold voltage of the super junction device, so that the super junction device is conducted and forms a channel current, the channel current injects carriers of a first conductivity type into the super junction structure, and the first conductivity type charges injected by the channel current reduce first conductivity type effective charges in a first conductivity type column in the super junction structure, thereby adjusting the matching state of the super junction structure; and then measuring the breakdown voltage of the super junction device under the corresponding grid voltage.
And step three, adjusting the grid voltage so as to adjust the channel current and further adjust the matching state of the super junction structure, measuring the breakdown voltage of the super junction device corresponding to the adjusted grid voltage, and forming a measurement curve between the matching state of the super junction structure and the breakdown voltage of the super junction device, which are adjusted by the grid voltage.
And fourthly, comparing the secondary curve with the measurement curve to determine the PN matching states of the P-type column and the N-type column of the super junction structure.
The further improvement is that the super junction device is an N-type device, the first conductivity type is an N-type, and the first conductivity type column is an N-type column.
In a further improvement, the quadratic curve is a curve of the doping concentration of the N-type column formed when the doping concentration of the P-type column is fixed and the doping concentration of the N-type column changes relative to the doping concentration of the P-type column and the breakdown voltage of the super junction device.
In a further improvement, when the doping concentration of the N-type column in the super junction structure is greater than that of the P-type column, the breakdown voltage obtained by the test in the step one is less than that of the best matching.
In the second step, the electrons injected by the channel current can reduce the N-type effective charge in the N-type column in the super junction structure, and as the channel current changes from small to large, the N-type effective charge in the N-type column gradually approaches to an optimal matching state, and gradually gets away from the optimal matching state after reaching the optimal matching state, so that the measured breakdown voltage can form a change which gradually increases and gradually decreases after reaching the maximum value, and the PN matching state of the P-type column and the N-type column of the super junction structure is determined by the change of the measured breakdown voltage, wherein the doping concentration of the N-type column is greater than that of the P-type column.
In a further improvement, when the doping concentration of the N-type column in the super junction structure is less than that of the P-type column, the breakdown voltage obtained by the test in the step one is less than that of the best matching.
In the second step, the electrons injected by the channel current can reduce the N-type effective charges in the N-type column in the super junction structure, so that the super junction structure is far away from the optimal matching state; with the change of the channel current from small to large, the super junction structure is further away from the optimal matching state, so that the measured breakdown voltage is gradually reduced, and the PN matching states of the P-type column and the N-type column of the super junction structure are determined through the change of the measured breakdown voltage, wherein the doping concentration of the N-type column is smaller than that of the P-type column.
In a further improvement, the super junction device is a super junction MOSFET.
The further improvement is that when the breakdown voltage of the super junction device is measured, the source electrode of the super junction device is grounded, the drain electrode of the super junction device is connected with the power voltage, the power voltage is increased until the super junction device breaks down, and the corresponding voltage when the super junction device breaks down is the breakdown voltage.
The further improvement is that the super junction device is a packaging device; alternatively, the super junction device is a device formed on a wafer (wafer) before packaging.
The invention utilizes the quadratic curve relation between the PN matching state of the super junction structure and the breakdown voltage of the super junction device, namely when the PN matching state of the super junction structure is determined, the corresponding breakdown voltage is also determined and the two are in accordance with the quadratic curve relation.
For a manufactured super junction device, the PN matching state of the super junction structure of the super junction device is actually determined after the manufacturing is finished, but the breakdown voltage and the PN matching state of the super junction structure accord with a quadratic curve relationship, so that the same breakdown voltage is in two PN matching states, and the PN matching state of the super junction structure cannot be obtained by simply measuring the breakdown voltage of the super junction device.
In order to definitely obtain the PN matching state of the super junction structure, the invention utilizes the channel current of the super junction device to modulate the PN matching of the super junction structure after the channel current is injected into the drift region, and the PN matching modulation of the super junction structure obtained by the different channel current is also different, and then the corresponding breakdown voltage under the PN matching state of the super junction structure formed by various modulations is measured, wherein the magnitude of the channel current can be adjusted through the magnitude of the gate voltage, and finally a measurement curve between the matching state of the super junction structure and the breakdown voltage of the super junction device can be formed through the adjustment of the gate voltage, the PN matching states of the P-type column and the N-type column of the super junction structure can be definitely determined by comparing with a quadratic curve of the super junction structure, so that the PN matching states in the super junction device can be analyzed and judged.
Drawings
The invention is described in further detail below with reference to the following figures and detailed description:
FIG. 1 is a flow chart of a method for analyzing PN matching states of a super junction device in accordance with an embodiment of the present invention;
FIG. 2 is a quadratic graph of a super junction structure in an embodiment of the invention;
FIG. 3A shows a relationship between a change in PN-match and a change in breakdown voltage, which are formed by modulation when a super junction structure is in a first PN-match state in the method of the embodiment of the present invention;
FIG. 3B is a graph showing the relationship between the gate voltage and the breakdown voltage when the super junction structure is in the first PN matching state according to the embodiment of the present invention;
FIG. 4A shows a relationship between a change in PN-match and a change in breakdown voltage, which are formed by modulation when the super junction structure is in a second PN-match state in the method of the embodiment of the present invention;
fig. 4B shows the relationship between the gate voltage and the breakdown voltage when the super junction structure is in the second PN matching state in the method according to the embodiment of the present invention.
Detailed Description
Fig. 1 is a flow chart of a method for analyzing a PN matching state of a super junction device according to an embodiment of the present invention; in the method for analyzing the PN matching state of the super junction device according to the embodiment of the present invention, the super junction device includes a gate, a drain, and a source, a super junction structure composed of P-type columns and N-type columns alternately arranged is provided in a drift region of the super junction device, the super junction device has a channel having a first conductivity type, and a quadratic curve relationship between the PN matching state of the super junction structure and a breakdown voltage of the super junction device is provided, the quadratic curve refers to a curve 101 in fig. 2, an abscissa is a concentration matching degree of the N-type columns, and 0 indicates that an impurity concentration of the P-type columns and an impurity concentration of the N-type columns are completely the same, so that the super junction device is completely matched, that is, there is no N-type carrier and no P-type carrier is excessive; greater than 0 indicates that: the impurity concentration of the N-type column is greater than that of the P-type column, and more N-type carriers can be contained in a super junction unit consisting of two adjacent P-type columns and the N-type column; less than 0 indicates that: the impurity concentration of the P-type column is larger than that of the N-type column, and more P-type carriers exist in a super junction unit formed by two adjacent P-type columns and the N-type column. The ordinate is the breakdown voltage of the super junction device, and it can be seen that the breakdown voltage reaches the maximum value when the horizontal and vertical scales are 0%, and the breakdown voltage is reduced when the breakdown voltage is greater than 0% and less than 0%.
The PN matching states of the P-type column and the N-type column of the super junction structure are analyzed by adopting the following steps:
step one, measuring the breakdown voltage of the super junction device under the condition that the grid voltage is not applied to the grid.
The super junction device is a super junction MOSFET.
The super junction device is a packaging device. The packaged device is a super junction MOSFET which is already separated from a wafer (wafer) piece and packaged by a packaging process. Or, the super junction device is a device formed on a wafer before packaging, and only a complete structure of the super junction device is required to be formed.
When the breakdown voltage of the super junction device is measured, the source electrode of the super junction device is grounded, the drain electrode of the super junction device is connected with the power voltage, the power voltage is increased until the super junction device breaks down, and the corresponding voltage when the super junction device breaks down is the breakdown voltage.
Secondly, adding a grid voltage on the grid, wherein the grid voltage is greater than or equal to the threshold voltage of the super junction device, so that the super junction device is conducted and forms a channel current, the channel current injects carriers of a first conductivity type into the super junction structure, and the first conductivity type charges injected by the channel current reduce first conductivity type effective charges in a first conductivity type column in the super junction structure, thereby adjusting the matching state of the super junction structure; and then measuring the breakdown voltage of the super junction device under the corresponding grid voltage.
And step three, adjusting the grid voltage so as to adjust the channel current and further adjust the matching state of the super junction structure, measuring the breakdown voltage of the super junction device corresponding to the adjusted grid voltage, and forming a measurement curve between the matching state of the super junction structure and the breakdown voltage of the super junction device, which are adjusted by the grid voltage.
And fourthly, comparing the secondary curve with the measurement curve to determine the PN matching states of the P-type column and the N-type column of the super junction structure.
In the embodiment of the invention, the super junction device is an N-type device, the first conduction type is an N-type, and the first conduction type column is an N-type column. The quadratic curve is a curve of the doping concentration of the N-type column and the breakdown voltage of the super junction device, which is the curve 101 in fig. 2, formed when the doping concentration of the P-type column is fixed and the doping concentration of the N-type column changes relative to the doping concentration of the P-type column. The method of the embodiment of the present invention will now be described by measuring the PN matching states of two super junction structures:
the super junction structure has the first PN matching state measured as follows:
as shown in fig. 3A, in the method according to the embodiment of the present invention, when the super junction structure is in the first PN matching state, the relationship between the change of PN matching formed by modulation and the change of breakdown voltage is obtained; as shown in fig. 3B, in the method according to the embodiment of the present invention, the change relationship between the gate voltage and the breakdown voltage is obtained when the super junction structure is in the first PN matching state.
And when the doping concentration of the N-type column in the super junction structure is greater than that of the P-type column, the breakdown voltage obtained by the test in the first step is less than that of the best matching. As shown in fig. 3A, when the first PN matching state of the super junction structure is located in the dotted circle 102a, the corresponding breakdown voltage can be obtained correspondingly from the curve 101, the tested value is consistent with the value corresponding to the curve 101, but the PN matching state of the super junction structure cannot be obtained from the tested value. Subsequent steps are also required.
In the second step, since the super junction device is an N-type device, the channel current is a current formed by electrons, the electrons injected by the channel current can reduce N-type effective charges in an N-type column in the super junction structure, the N-type effective charges in the N-type column gradually approach to an optimal matching state with the change from small to large of the channel current, and gradually get away from the optimal matching state after reaching the optimal matching state, and an arrow 103A in fig. 3A illustrates the change of PN matching states of a P-type column and an N-type column of the super junction structure through channel current adjustment; according to the change and the quadratic curve of the PN matching state of the P-type column and the N-type column of the super junction structure, the measured breakdown voltage can form a change which gradually increases and gradually decreases after reaching the maximum value; therefore, the PN matching states of the P-type column and the N-type column of the super junction structure can be determined through measuring the change of the breakdown voltage, wherein the doping concentration of the N-type column is greater than that of the P-type column.
Since the magnitude of the channel current is directly determined by the gate voltage, the super junction structure can be obtained as the first PN matching state directly according to the change relationship between the gate voltage and the breakdown voltage, in fig. 3B, the arrow corresponding to the increase of VG indicates the direction of the increase of the gate voltage, and the arrow corresponding to the change of VB indicates the direction of the change of the breakdown voltage, it can be seen that, as the gate voltage increases, VB increases first and then decreases after reaching the maximum value, and therefore, the change of VB can determine that the PN matching state of the P-type column and the N-type column of the super junction structure is that the doping concentration of the N-type column is greater than that of the P-type column.
The super junction structure has a second PN matching state measured as follows:
as shown in fig. 4B, in the method according to the embodiment of the present invention, when the super junction structure is in the second PN matching state, the relationship between the change of PN matching formed by modulation and the change of breakdown voltage is obtained; as shown in fig. 4B, in the method according to the embodiment of the present invention, the gate voltage and the breakdown voltage have a variation relationship when the super junction structure is in the second PN matching state.
And when the doping concentration of the N-type column in the super junction structure is smaller than that of the P-type column, the breakdown voltage obtained by the test in the first step is smaller than that of the best matching. As shown in fig. 4A, at this time, the second PN matching state of the super junction structure is located in the dotted circle 102b, the corresponding breakdown voltage can be correspondingly obtained from the curve 101, the tested value is consistent with the value corresponding to the curve 101, but the PN matching state of the super junction structure cannot be obtained from the tested value. Subsequent steps are also required.
In the second step, the electrons injected by the channel current can reduce the N-type effective charges in the N-type column in the super junction structure, so that the super junction structure is far away from the optimal matching state; with the change of the channel current from small to large, the super junction structure is further away from the optimal matching state, so that the measured breakdown voltage is gradually reduced, and an arrow 103b in fig. 4A illustrates the change of the PN matching states of the P-type column and the N-type column of the super junction structure through channel current regulation; according to the change and the quadratic curve of the PN matching state of the P-type column and the N-type column of the super junction structure, the breakdown voltage obtained through measurement can be gradually reduced. And determining the PN matching state of the P-type column and the N-type column of the super junction structure through the measured change of the breakdown voltage, wherein the doping concentration of the N-type column is less than that of the P-type column.
Since the magnitude of the channel current is directly determined by the gate voltage, the super junction structure can be obtained as the second PN matching state directly according to the variation relationship between the gate voltage and the breakdown voltage, in fig. 4B, the arrow corresponding to the increase of VG indicates the direction of the increase of the gate voltage, and the arrow corresponding to the variation of VB indicates the direction of the variation of the breakdown voltage, it can be seen that, as the gate voltage increases, VB gradually decreases, and therefore, the variation of VB gradually decreasing can determine that the PN matching state of the P-type column and the N-type column of the super junction structure is that the doping concentration of the N-type column is less than that of the P-type column.
The embodiment of the invention utilizes the quadratic curve relationship between the PN matching state of the super junction structure and the breakdown voltage of the super junction device, namely when the PN matching state of the super junction structure is determined, the corresponding breakdown voltage is also determined and the two are in accordance with the quadratic curve relationship.
For a manufactured super junction device, the PN matching state of the super junction structure of the super junction device is actually determined after the manufacturing is finished, but the breakdown voltage and the PN matching state of the super junction structure accord with a quadratic curve relationship, so that the same breakdown voltage is in two PN matching states, and the PN matching state of the super junction structure cannot be obtained by simply measuring the breakdown voltage of the super junction device.
In order to definitely obtain the PN matching state of the super junction structure, the embodiment of the invention utilizes the channel current of the super junction device to modulate the PN matching of the super junction structure after the channel current is injected into the drift region, and the PN matching modulation of the super junction structure obtained by the different channel current is also different, and then the corresponding breakdown voltage under the PN matching state of the super junction structure formed by various modulations is measured, wherein the magnitude of the channel current can be adjusted through the magnitude of the gate voltage, and finally a measurement curve between the matching state of the super junction structure and the breakdown voltage of the super junction device can be formed through the adjustment of the gate voltage, the PN matching states of the P-type column and the N-type column of the super junction structure can be definitely determined by comparing with the quadratic curve of the super junction structure, therefore, the embodiment of the invention can analyze and judge the PN matching state in the super junction device.
The method provided by the embodiment of the invention is only explained by taking an N-type super junction device as an example, and is also suitable for measuring a P-type super junction device, when the P-type super junction device is carried out, the adopted quadratic curve should fix the doping concentration of an N-type column and change the doping concentration of the P-type column, the channel current of the P-type super junction device can be injected into a hole to the super junction structure to realize the adjustment of the matching of the P-type column and the N-type column of the super junction structure, and the actual PN matching state of the corresponding super junction structure can be obtained by measuring the breakdown voltage corresponding to the PN matching degree.
The present invention has been described in detail with reference to the specific embodiments, but these should not be construed as limitations of the present invention. Many variations and modifications may be made by one of ordinary skill in the art without departing from the principles of the present invention, which should also be considered as within the scope of the present invention.
Claims (8)
1. A super junction device comprises a grid electrode, a drain electrode and a source electrode, a super junction structure consisting of P-type columns and N-type columns which are alternately arranged is arranged in a drift region of the super junction device, a channel with a first conduction type is arranged, and a quadratic curve relation is formed between the PN matching state of the super junction structure and the breakdown voltage of the super junction device, and the method is characterized in that the PN matching states of the P-type columns and the N-type columns of the super junction structure are analyzed by adopting the following steps:
step one, measuring the breakdown voltage of the super junction device under the condition that the grid voltage is not applied to the grid;
secondly, adding a grid voltage on the grid, wherein the grid voltage is greater than or equal to the threshold voltage of the super junction device, so that the super junction device is conducted and forms a channel current, the channel current injects carriers of a first conductivity type into the super junction structure, and the first conductivity type charges injected by the channel current reduce first conductivity type effective charges in a first conductivity type column in the super junction structure, thereby adjusting the matching state of the super junction structure; then, measuring the breakdown voltage of the super junction device under the corresponding grid voltage;
adjusting the grid voltage so as to adjust the channel current and further adjust the matching state of the super junction structure, measuring the breakdown voltage of the super junction device corresponding to the adjusted grid voltage, and forming a measurement curve between the matching state of the super junction structure and the breakdown voltage of the super junction device, which are adjusted by the grid voltage;
and fourthly, comparing the secondary curve with the measurement curve to determine the PN matching states of the P-type column and the N-type column of the super junction structure.
2. The method of analyzing the PN matching state of a super junction device as claimed in claim 1, wherein: the super junction device is an N-type device, the first conduction type is an N-type, and the first conduction type column is an N-type column.
3. The method of analyzing the PN matching state of a super junction device as claimed in claim 2, wherein: the quadratic curve is a curve of the doping concentration of the N-type column and the breakdown voltage of the super junction device, wherein the doping concentration of the P-type column is fixed, and the doping concentration of the N-type column is formed when the doping concentration of the N-type column changes relative to the doping concentration of the P-type column.
4. The method of analyzing the PN matching state of a super junction device as claimed in claim 3, wherein: when the doping concentration of the N-type column in the super junction structure is larger than that of the P-type column, the breakdown voltage obtained by the test in the first step is smaller than that of the best matching;
in the second step, the electrons injected by the channel current can reduce the N-type effective charge in the N-type column in the super junction structure, and as the channel current changes from small to large, the N-type effective charge in the N-type column gradually approaches to an optimal matching state, and gradually gets away from the optimal matching state after reaching the optimal matching state, so that the measured breakdown voltage can form a change which gradually increases and gradually decreases after reaching the maximum value, and the PN matching state of the P-type column and the N-type column of the super junction structure is determined by the change of the measured breakdown voltage, wherein the doping concentration of the N-type column is greater than that of the P-type column.
5. The method of analyzing the PN matching state of a super junction device as claimed in claim 3, wherein: when the doping concentration of an N-type column in the super junction structure is smaller than that of a P-type column, the breakdown voltage obtained by the test in the first step is smaller than that of the best matching;
in the second step, the electrons injected by the channel current can reduce the N-type effective charges in the N-type column in the super junction structure, so that the super junction structure is far away from the optimal matching state; with the change of the channel current from small to large, the super junction structure is further away from the optimal matching state, so that the measured breakdown voltage is gradually reduced, and the PN matching states of the P-type column and the N-type column of the super junction structure are determined through the change of the measured breakdown voltage, wherein the doping concentration of the N-type column is smaller than that of the P-type column.
6. The method of analyzing the PN matching state of a super junction device as claimed in claim 2, wherein: the super junction device is a super junction MOSFET.
7. The method of analyzing the PN matching state of a super junction device as claimed in claim 6, wherein: when the breakdown voltage of the super junction device is measured, the source electrode of the super junction device is grounded, the drain electrode of the super junction device is connected with the power voltage, the power voltage is increased until the super junction device breaks down, and the corresponding voltage when the super junction device breaks down is the breakdown voltage.
8. The method of analyzing the PN matching state of a super junction device as claimed in claim 2, wherein: the super junction device is a packaging device; or the super junction device is a device formed on a wafer before packaging.
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