CN108873135A - A kind of near-infrared narrow band filter and infrared imaging system - Google Patents
A kind of near-infrared narrow band filter and infrared imaging system Download PDFInfo
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- CN108873135A CN108873135A CN201810884789.XA CN201810884789A CN108873135A CN 108873135 A CN108873135 A CN 108873135A CN 201810884789 A CN201810884789 A CN 201810884789A CN 108873135 A CN108873135 A CN 108873135A
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- 238000003331 infrared imaging Methods 0.000 title claims abstract description 11
- 239000012528 membrane Substances 0.000 claims abstract description 141
- 239000000758 substrate Substances 0.000 claims abstract description 20
- 230000007704 transition Effects 0.000 claims abstract description 7
- 239000000463 material Substances 0.000 claims description 53
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 32
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims description 12
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 claims description 12
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 10
- 229910052739 hydrogen Inorganic materials 0.000 claims description 8
- 239000001257 hydrogen Substances 0.000 claims description 8
- 238000004544 sputter deposition Methods 0.000 claims description 8
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 7
- 230000008859 change Effects 0.000 claims description 7
- 229910002637 Pr6O11 Inorganic materials 0.000 claims description 6
- 229910007261 Si2N3 Inorganic materials 0.000 claims description 6
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 6
- 229910052593 corundum Inorganic materials 0.000 claims description 6
- MRELNEQAGSRDBK-UHFFFAOYSA-N lanthanum oxide Inorganic materials [O-2].[O-2].[O-2].[La+3].[La+3] MRELNEQAGSRDBK-UHFFFAOYSA-N 0.000 claims description 6
- KTUFCUMIWABKDW-UHFFFAOYSA-N oxo(oxolanthaniooxy)lanthanum Chemical compound O=[La]O[La]=O KTUFCUMIWABKDW-UHFFFAOYSA-N 0.000 claims description 6
- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 claims description 6
- 229910001845 yogo sapphire Inorganic materials 0.000 claims description 6
- ZKATWMILCYLAPD-UHFFFAOYSA-N niobium pentoxide Chemical compound O=[Nb](=O)O[Nb](=O)=O ZKATWMILCYLAPD-UHFFFAOYSA-N 0.000 claims 4
- 229910052681 coesite Inorganic materials 0.000 claims 2
- 229910052906 cristobalite Inorganic materials 0.000 claims 2
- 239000000377 silicon dioxide Substances 0.000 claims 2
- 229910052682 stishovite Inorganic materials 0.000 claims 2
- 229910052905 tridymite Inorganic materials 0.000 claims 2
- 150000002431 hydrogen Chemical class 0.000 claims 1
- 238000002834 transmittance Methods 0.000 abstract description 2
- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 description 22
- 239000011248 coating agent Substances 0.000 description 21
- 238000000576 coating method Methods 0.000 description 21
- 230000003287 optical effect Effects 0.000 description 20
- 230000000694 effects Effects 0.000 description 8
- 239000000203 mixture Substances 0.000 description 8
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 7
- 238000003384 imaging method Methods 0.000 description 7
- 229910000077 silane Inorganic materials 0.000 description 7
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 6
- 241000208340 Araliaceae Species 0.000 description 5
- 235000005035 Panax pseudoginseng ssp. pseudoginseng Nutrition 0.000 description 5
- 235000003140 Panax quinquefolius Nutrition 0.000 description 5
- 238000004364 calculation method Methods 0.000 description 5
- 235000008434 ginseng Nutrition 0.000 description 5
- MEYZYGMYMLNUHJ-UHFFFAOYSA-N tunicamycin Natural products CC(C)CCCCCCCCCC=CC(=O)NC1C(O)C(O)C(CC(O)C2OC(C(O)C2O)N3C=CC(=O)NC3=O)OC1OC4OC(CO)C(O)C(O)C4NC(=O)C MEYZYGMYMLNUHJ-UHFFFAOYSA-N 0.000 description 5
- -1 Si2N Inorganic materials 0.000 description 4
- 238000005260 corrosion Methods 0.000 description 4
- 230000007797 corrosion Effects 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 230000013011 mating Effects 0.000 description 3
- 230000003667 anti-reflective effect Effects 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
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- 230000001795 light effect Effects 0.000 description 1
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- 239000010703 silicon Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
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Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/20—Filters
- G02B5/208—Filters for use with infrared or ultraviolet radiation, e.g. for separating visible light from infrared and/or ultraviolet radiation
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
- G02B1/10—Optical coatings produced by application to, or surface treatment of, optical elements
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
- G02B1/10—Optical coatings produced by application to, or surface treatment of, optical elements
- G02B1/11—Anti-reflection coatings
- G02B1/113—Anti-reflection coatings using inorganic layer materials only
- G02B1/115—Multilayers
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- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Optical Filters (AREA)
Abstract
The present invention relates to a kind of near-infrared narrow band filter and infrared imaging system, wherein near-infrared narrow band filter includes：The IR membrane system of the substrate side is arranged in substrate；The IR membrane system includes the first high refractive index layer and the first low-index film being alternately coated with, and the outermost layer of the IR membrane system is the first low-index film；In the wave-length coverage of 800~1200nm, the IR membrane system has a passband wave band, two transition wave bands and two cut-off wave bands, the passband wave band is located between two described two cut-off wave bands, and the little bellow section is between the passband wave band and the cut-off wave band；The passband wave band has central wavelength, and in the range of incidence angle changes from 0 ° to 30 °, the central wavelength drift band of the passband wave band is between 7nm~13nm.Under the premise of guaranteeing high transmittance, narrow band filter passband center wavelengths are reduced with angle drift amount, improve image quality.
Description
Technical field
The present invention relates to a kind of optical filter and infrared imaging system more particularly to a kind of near-infrared narrow band filters and infrared
Imaging system.
Background technique
With the development of science and technology, in smart phone, mobile lidar, safe burglar-proof gate inhibition, smart home, virtual reality/increasing
Face equipment, gesture identification etc. are gradually embedded in the terminals such as strong reality/mixed reality, 3D somatic sensation television game, 3D camera shooting and display
Function.
It needs to use near-infrared narrow band filter in recognition of face, gesture identification, can play close red in anti-reflection copper strips
UV light ends the effect of visible light in environment.Usual near-infrared narrow band filter includes two membrane systems, respectively IR band logical film
System and long wave lead to AR membrane system.However optical filter in the prior art is to the antireflective effect of near infrared light and cut-off visible light
Effect is poor, exists simultaneously the thicker problem of membrane system thicknesses of layers, is attached to recognition of face, gesture knowledge so as to cause by filter set
Deng not be after devices, imaging effect is poor, accuracy of identification is not high.
Summary of the invention
The purpose of the present invention is to provide a kind of near-infrared narrow band filter and infrared imaging systems, solve near infrared filter
The problem of piece imaging effect difference.
For achieving the above object, the present invention provides a kind of near-infrared narrow band filter, including：Substrate is arranged in institute
State the IR membrane system of substrate side；
The IR membrane system includes the first high refractive index layer and the first low-index film being alternately coated with, the IR membrane system
Outermost layer be the first low-index film；In the wave-length coverage of 800~1200nm, the IR membrane system has a passband
Wave band, two transition wave bands and two cut-off wave bands, the passband wave band is located between two described two cut-off wave bands, described
Little bellow section is between the passband wave band and the cut-off wave band；
The passband wave band has central wavelength, and in the range of incidence angle changes from 0 ° to 30 °, the passband wave band
Central wavelength drift band between 7nm~13nm.
According to an aspect of the present invention, in the range of incidence angle changes from 20 ° to 30 °, every 1 ° of the variation of incidence angle, institute
The central wavelength drift band for stating passband wave band is less than 5nm.
According to an aspect of the present invention, the passband band is less than 400nm.
According to an aspect of the present invention, in the wave-length coverage of 800~1200nm, the passband wave band transmitance is greater than
90%, the cut-off wave band transmitance is less than 0.1%.
According to an aspect of the present invention, the side passband wave band UV and IR lateral curvature line steepness are between 7nm~13nm.
According to an aspect of the present invention, first high refractive index layer is layer of hydrogenated；
In the wave-length coverage of 800~1200nm, the refractive index of first high refractive index layer is greater than 3.5, and delustring
Coefficient is less than 0.002.
According to an aspect of the present invention, at 850nm wavelength, the first high refractive index layer refractive index is greater than 3.6；
At 940nm wavelength, the first high refractive index layer refractive index is greater than 3.55.
According to an aspect of the present invention, first high refractive index layer is sputtering reaction film layer, existing for hydrogen
Under the conditions of, sputtering reaction temperature is 80 DEG C~300 DEG C, and sputter rate is 0.1nm/s≤v≤1nm/s.
According to an aspect of the present invention, the hydrogen is introduced with adjustable flow, and its flow meet 10sccm≤
v1≤50sccm。
According to an aspect of the present invention, the physics of first high refractive index layer and first low-index film
Thickness relationship meets：0.01≤DL/DH≤ 100, wherein DL、DHRespectively indicate the first low-index film and the first high refractive index
The physical thickness of film layer.
According to an aspect of the present invention, in the range of incidence angle changes from 0 ° to 10 °, the center of the passband wave band
Wave length shift amplitude is between 0.5nm~1.5nm, every 1 ° of the variation of incidence angle, the central wavelength drift frames of the passband wave band
Degree is less than 1.5nm；
In the range of incidence angle changes from 0 ° to 20 °, the central wavelength drift band of the passband wave band is between 2.5nm
Between~8nm, change from 10 ° in the range of 20 °, every 1 ° of the variation of incidence angle, the central wavelength drift frames of the passband wave band
Degree is less than 6nm；
In the range of incidence angle changes from 0 ° to 40 °, the central wavelength drift band of the passband wave band is between 12nm
Between~20nm, change from 0 ° in the range of 10 °, every 1 ° of the variation of incidence angle, the central wavelength drift frames of the passband wave band
Degree is less than 8nm.
It according to an aspect of the present invention, further include AR membrane system；
The IR membrane system and the opposite two sides positioned at the substrate of the AR membrane system；
The AR membrane system includes the second high refractive index layer and the second low-index film being alternately coated with, the AR membrane system
Outermost layer be the second low-index film.
According to an aspect of the present invention, in the wave-length coverage of 350~1200nm, the AR membrane system has a passband
Region, and its transmitance is greater than 90%, a cut-off region, and its transmitance is less than 0.1%；
In the wave-length coverage of 800~1200nm, the AR membrane system also has a transitional region, and its transmitance between
Between 0.1%~90%.
According to an aspect of the present invention, the film layer overall thickness of the IR membrane system and the AR membrane system is less than 9.8 μm.
According to an aspect of the present invention, the full width at half maximum value of the near-infrared narrow band filter is less than 120nm.
According to an aspect of the present invention, the refractive index of first low-index film is less than 3, and its material is
SiO2、Nb2O5、Ta2O5、TiO2、Al2O3、ZrO2、Pr6O11、La2O3、Si2N、SiN、Si2N3、Si3N4One of or it is a variety of
Combination；
The refractive index of second low-index film is less than 3, and its material is SiO2、Nb2O5、Ta2O5、TiO2、Al2O3、
ZrO2、Pr6O11、La2O3、Si2N、SiN、Si2N3、Si3N4One of or a variety of combinations.
For achieving the above object, the present invention provides a kind of infrared imaging system, which is characterized in that emits system including IR
System and IR receive system；
The IR emission system includes IR transmitting light source and the first mirror for projecting the light that the IR transmitting light source issues
Head assembly；
It includes near-infrared narrow band filter, the second lens assembly and infrared image sensor that the IR, which receives system,；
The infrared narrow band filter is between second lens assembly and the infrared image sensor.
According to an aspect of the present invention, first lens assembly includes infrared light supply collimation camera lens and is arranged described
Infrared light supply collimates the diffraction component on camera lens.
A kind of scheme according to the present invention can pole under the premise of guaranteeing near infrared filter high transmittance of the invention
The earth reduces narrow band filter passband center wavelengths with angle drift amount, improves the steepness of narrow band filter transition region, thus
Image quality is improved, recognition of face is further increased, signal-to-noise ratio in gesture recognition system, reduces film layer overall thickness and plated film
Total time production cost is reduced, has saved use cost for terminal client.
A kind of scheme according to the present invention, by the way that the first low-refraction will be arranged respectively on the outside of IR membrane system and AR membrane system
Film layer and the second low-index film, are conducive to IR membrane system and AR membrane system is attached on substrate, and its hardness is high, wearability
Good, corrosion resistance is strong, to advantageously ensure that the stable structure of IR membrane system and AR membrane system of the invention, and improve IR membrane system and
The service life of AR membrane system further improves the service life of infrared narrow band filter of the invention.Meanwhile it is of the invention close
The thickness of infrared narrow band filter is small, has saved production cost of the invention.
A kind of scheme according to the present invention, is arranged by above-mentioned condition, so that the first high refractive index layer being coated with has
Good film layer characteristic, so that the first high refractive index layer reaches higher refractive index, further such that near-infrared of the invention
The imaging effect of narrow band filter is more preferable.
Detailed description of the invention
Fig. 1 schematically shows a kind of structure chart of the near infrared filter of embodiment according to the present invention；
Fig. 2 schematically show a kind of IR membrane system of the near infrared filter of embodiment according to the present invention wavelength and thoroughly
Cross curve relation figure；
Fig. 3 schematically shows the structure chart of the near infrared filter of another embodiment according to the present invention；
Fig. 4 schematically shows a kind of structure chart of the infrared imaging system of embodiment according to the present invention.
Fig. 5 schematically shows the IR film layer transmitance of embodiment according to the present invention 1 and the curve relation figure of wavelength；
Fig. 6 schematically shows the IR film layer transmitance of embodiment according to the present invention 2 and the curve relation figure of wavelength；
Fig. 7 schematically shows the IR film layer transmitance of embodiment according to the present invention 3 and the curve relation figure of wavelength；
Fig. 8 schematically shows the IR film layer transmitance of embodiment according to the present invention 4 and the curve relation figure of wavelength；
Fig. 9 schematically shows the AR film layer transmitance of embodiment according to the present invention 4 and the curve relation figure of wavelength；
Figure 10 schematically shows the IR film layer transmitance of embodiment according to the present invention 5 and the curve relation figure of wavelength；
Figure 11 schematically shows the AR film layer transmitance of embodiment according to the present invention 5 and the curve relation figure of wavelength.
Specific embodiment
It, below will be to embodiment in order to illustrate more clearly of embodiment of the present invention or technical solution in the prior art
Needed in attached drawing be briefly described.It should be evident that the accompanying drawings in the following description is only of the invention some
Embodiment for those of ordinary skills without creative efforts, can also be according to these
Attached drawing obtains other attached drawings.
When being described for embodiments of the present invention, term " longitudinal direction ", " transverse direction ", "upper", "lower", " preceding ",
" rear ", "left", "right", "vertical", "horizontal", "top", "bottom" "inner", orientation or positional relationship expressed by "outside" are based on phase
Orientation or positional relationship shown in the drawings is closed, is merely for convenience of description of the present invention and simplification of the description, rather than instruction or dark
Show that signified device or element must have a particular orientation, be constructed and operated in a specific orientation, therefore above-mentioned term cannot
It is interpreted as limitation of the present invention.
The present invention is described in detail with reference to the accompanying drawings and detailed description, embodiment cannot go to live in the household of one's in-laws on getting married one by one herein
It states, but therefore embodiments of the present invention are not defined in following implementation.
As shown in Figure 1, a kind of embodiment according to the present invention, a kind of near-infrared narrow band filter of the invention, including
Substrate 11 and IR membrane system 12.In the present embodiment, IR membrane system 12 is arranged on the one side of substrate 11.IR membrane system 12 is multilayer
The structure that film is constituted.In the present embodiment, IR membrane system 12 is low including the first high refractive index layer 121 and first being alternately coated with
Refractivity film layer 122.In the present embodiment, the refractive index of the first high refractive index layer 121 is greater than 3, the first low refractive index film
The refractive index of layer 122 is less than 3.In IR membrane system 12, in 12 outermost layer of IR membrane system (i.e. IR membrane system 12 and substrate 11 and incident Jie
The position that matter is in contact) it is the first low-index film 122.In the present embodiment, the IR film of near-infrared narrow band filter
It is 12 film layer overall thickness less than 9.8 μm.In the present embodiment, the full width at half maximum value of near-infrared narrow band filter is less than 120nm.
Further, the 12 film layer overall thickness of IR membrane system of near-infrared narrow band filter is less than 8 μm.In the present embodiment, near-infrared is narrow
Full width at half maximum value with optical filter is less than 114nm.Have by the way that the outside of IR membrane system 12 is arranged to the first low-index film 122
On the substrate 11 conducive to the attachment of IR membrane system 12, and its hardness is high, and wearability is good, and corrosion resistance is strong, to advantageously ensure that this
The stable structure of the IR membrane system 12 of invention, and the service life of IR membrane system 12 is improved, it further improves of the invention infrared
The service life of narrow band filter.Meanwhile the thickness of near-infrared narrow band filter of the invention is small, has saved production of the invention
Cost.
A kind of embodiment according to the present invention, the refractive index of the first low-index film 122 is less than 3.In this embodiment party
In formula, the material of the first low-index film 122 is SiO2、Nb2O5、Ta2O5、TiO2、Al2O3、ZrO2、Pr6O11、La2O3、
Si2N、SiN、Si2N3、Si3N4One of or a variety of combinations.
A kind of embodiment according to the present invention, in the wave-length coverage of 800~1200nm, since IR membrane system 12 passes through friendship
For being coated with the first high refractive index layer 121 and the first low-index film 122, therefore by the interference effect of incident light to produce
Raw passband wave band, transition wave band and cut-off wave band.In the present embodiment, in the wave-length coverage of 800~1200nm, IR membrane system
12 have two transition wave bands of a passband wave band and a two cut-off wave bands, passband wave band positioned at two two cut-off wave bands it
Between, i.e. the two sides that two cut-off wave sections are located at the passband wave band, little bellow section is located between passband wave band and cut-off wave band.?
In present embodiment, passband wave band has central wavelength, and in the range of incidence angle changes from 0 ° to 30 °, passband wave band
For central wavelength drift band between 7nm~13nm, i.e., the central wavelength drift band of passband wave band is greater than 7nm, and small
In 13nm.Meanwhile in the range of incidence angle changes from 20 ° to 30 °, every 1 ° of the variation of incidence angle, the central wavelength of passband wave band
Drift band is less than 5nm.
A kind of embodiment according to the present invention, the object of the first high refractive index layer 121 and the first low-index film 122
Reason relationship meets：0.01≤DL/DH≤ 100, wherein DL、DHRespectively indicate the first low-index film and the first high refractive index film
The physical thickness of layer.By being arranged the physical thickness of the first high refractive index layer 121 and the first low-index film 122 upper
It states in range, to be conducive to reduce the drift band of 12 passband band center wavelength of IR membrane system, improves imaging of the invention
Quality.It is of the invention in the present embodiment, the first low-index film 122 be silicon nitride layer.First low-index film 122
Using silicon nitride material, it is outstanding with adhesive force, hardness is high, wearability is good, resistance to corrosion is strong, therefore ensure that IR membrane system
12 with the bonding strength and structural strength of substrate 11, and improve the service life of IR membrane system 12.
It should be pointed out that IR membrane system is infrared cut coating.
Further, in the present embodiment, in the wave-length coverage of 800~1200nm, there is IR membrane system 12 one to lead to
Band two transition wave bands of wave band and two cut-off wave bands, passband wave band are located between two two cut-off wave bands, i.e., two cut-offs
Wave band is located at the two sides of the passband wave band, and little bellow section is located between passband wave band and cut-off wave band.In the present embodiment,
Passband wave band has central wavelength, and in the range of incidence angle changes from 0 ° to 30 °, the central wavelength drift frames of passband wave band
For degree between 8nm~12nm, i.e., the central wavelength drift band of passband wave band is greater than 8nm, and is less than 12nm.Meanwhile
Incidence angle changes from 20 ° in the range of 30 °, and every 1 ° of the variation of incidence angle, the central wavelength drift band of passband wave band is less than
5nm。
In the present embodiment, in the range of incidence angle changes from 0 ° to 10 °, the central wavelength drift frames of passband wave band
For degree between 0.5nm~1.5nm, every 1 ° of the variation of incidence angle, the central wavelength drift band of passband wave band is less than 1.5nm.
In the present embodiment, in the range of incidence angle changes from 0 ° to 20 °, the central wavelength drift frames of passband wave band
Degree changes from 10 ° in the range of 20 ° between 2.5nm~8nm, every 1 ° of the variation of incidence angle, the central wavelength of passband wave band
Drift band is less than 6nm.
In the present embodiment, in the range of incidence angle changes from 0 ° to 40 °, the central wavelength drift frames of passband wave band
Degree changes from 0 ° in the range of 10 ° between 12nm~20nm, every 1 ° of the variation of incidence angle, the central wavelength of passband wave band
Drift band is less than 8nm.
A kind of embodiment according to the present invention, passband band are less than 400nm.In the present embodiment, 800~
In the wave-length coverage of 1200nm, passband wave band transmitance is greater than 90%, and the cut-off wave band transmitance is less than 0.1%.Referring to fig. 2
Shown, in the present embodiment, the side passband wave band UV (close to the side of short wavelength) and the side IR (close to the side of long wavelength) is bent
Line steepness is between 7nm~13nm.
A kind of embodiment according to the present invention, the first high refractive index layer 121 are silane (Si:H) layer.In this implementation
In mode, in the wave-length coverage of 800~1200nm, the refractive index of the first high refractive index layer 121 is greater than 3.5, and delustring system
Number is less than 0.002.Wherein, at 850nm wavelength, 121 refractive index of the first high refractive index layer is greater than 3.6.In 940nm wavelength
Place, 121 refractive index of the first high refractive index layer are greater than 3.55.
A kind of embodiment according to the present invention, the first high refractive index layer 121 are sputtering reaction film layer.In this embodiment party
In formula, the first high refractive index layer 121 is coated with by sputtering consersion unit.The material that first high refractive index layer 121 uses for
Silication hydrogen.The substrate 11 of clean surface is placed in sputtering consersion unit, in substrate under conditions of there are silicon target and hydrogen
The first high refractive index layer 121 is coated on 11.In the present embodiment, it is introduced into consersion unit by adjustable flow,
Sputtering reaction temperature is 80 DEG C~300 DEG C, and the sputter rate of silication hydrogen is 0.1nm/s≤v≤1nm/s.In the present embodiment,
The flow that hydrogen introduces meets 10sccm≤v1≤50sccm.It is arranged by above-mentioned condition, so that the first high refractive index being coated with
Film layer 121 has good film layer characteristic, so that the first high refractive index layer 121 reaches higher refractive index, further such that
The imaging effect of near-infrared narrow band filter of the invention is more preferable.
As shown in figure 3, another embodiment according to the present invention, a kind of near-infrared narrow band filter of the invention, packet
Include substrate 11, IR membrane system 12 and AR membrane system 13.In the present embodiment, IR membrane system 12 and AR membrane system 13 are separately positioned on substrate 11
Opposite two sides.IR membrane system 12 and AR membrane system 13 are respectively the structure that multilayer film is constituted.In the present embodiment, IR membrane system 12 is wrapped
Include the first high refractive index layer 121 and the first low-index film 122 being alternately coated with.In the present embodiment, the first high folding
The refractive index for penetrating rate film layer 121 is greater than 3, and the refractive index of the first low-index film 122 is less than 3.In IR membrane system 12, it is in IR
Outermost membrane system 12 is the first low-index film 122.AR membrane system 13 includes the second high refractive index layer being alternately coated with
131 and second low-index film 132, the refractive index of the second high refractive index layer 131 can be greater than 3, might be less that 3, the
The refractive index of two low-index films 132 is less than 3, it should be pointed out that the refractive index of the second high refractive index layer 131 is less than 3
When, material used in the second high refractive index layer 131 is different from the material of the second low-index film 132, and the second high refraction
The refractive index of rate film layer 131 is higher than the second low-index film 132.In AR membrane system 13, it is in 13 outermost layer (AR of AR membrane system
The position that membrane system 13 is in contact with substrate 11 and incident medium respectively) it is the second low-index film 132.In present embodiment
In, the IR membrane system 12 of near-infrared narrow band filter and the film layer overall thickness of AR membrane system 13 are less than 9.8 μm.In the present embodiment,
The full width at half maximum value of near-infrared narrow band filter is less than 120nm.Further, in the present embodiment, near-infrared narrow-band-filter
The IR membrane system 12 of piece and the film layer overall thickness of AR membrane system 13 are less than 8 μm.In the present embodiment, the half of near-infrared narrow band filter
High overall with value is less than 114nm.By the way that the outside of IR membrane system 12 and AR membrane system 13 is arranged respectively to the first low-index film 122
With the second low-index film 132, be conducive to IR membrane system 12 and the attachment of AR membrane system 13 on the substrate 11, and its hardness is high, it is resistance to
Mill property is good, and corrosion resistance is strong, to advantageously ensure that the stable structure of IR membrane system 12 and AR membrane system 13 of the invention, and improves
The service life of IR membrane system 12 and AR membrane system 13 further improves the service life of infrared narrow band filter of the invention.Together
When, the thickness of near-infrared narrow band filter of the invention is small, has saved production cost of the invention.In the present embodiment, IR
The setting structure of membrane system 12 is consistent with aforementioned embodiments, and details are not described herein.
It should be pointed out that IR membrane system is infrared cut coating, AR membrane system is antireflective film, i.e. anti-reflection film.
A kind of embodiment according to the present invention, the refractive index of the second low-index film 132 is less than 3.In this embodiment party
In formula, the material of the second low-index film 132 is SiO2、Nb2O5、Ta2O5、TiO2、Al2O3、ZrO2、Pr6O11、La2O3、
Si2N、SiN、Si2N3、Si3N4One of or a variety of combinations.
A kind of embodiment according to the present invention, in the wave-length coverage of 350~1200nm, since AR membrane system 13 passes through friendship
For being coated with the second high refractive index layer 131 and the second low-index film 132, therefore by the interference effect of incident light to produce
Raw pass band areas and cut-off region.In the present embodiment, AR membrane system 13 has a pass band areas, and its transmitance is greater than
90%, a cut-off region, and its transmitance is less than 0.1%.In the present embodiment, in the wave-length coverage of 800~1200nm
Interior, the transitional region transmitance in AR membrane system 13 is between 0.1%~90%.
As shown in figure 4, a kind of embodiment according to the present invention, infrared imaging system of the invention, including IR transmitting system
System and IR receive system.In the present embodiment, IR emission system includes IR transmitting light source 2 and the first lens assembly 3.First mirror
Head assembly 3 and IR transmitting light source 2 is opposite is arranged, the first lens assembly 3 are used for transmission the light that IR transmitting light source 2 issues and by institutes
In the light projection of transmission to object A (such as face, hand etc.).In the present embodiment, it is VCSEL, LD, LED that IR, which emits light source 2,
One of.In the present embodiment, the first lens assembly 3 includes infrared light supply collimation camera lens 31 and diffraction component 32.At this
In embodiment, the setting of diffraction component 32 is on infrared light supply collimation camera lens 31.The light that IR transmitting light source 2 issues passes through infrared light
Source collimation camera lens 31 is corrected collimation, and is projected on object by the light of collimation by diffraction component 32.
A kind of embodiment according to the present invention, it includes near-infrared narrow band filter 1, the second lens assembly that IR, which receives system,
4 and infrared image sensor 5.In the present embodiment, infrared narrow band filter 1 is located at the second lens assembly 4 and infrared image
Between sensor 5.Second lens assembly 4 can be common lens.Light on object is transferred in the second lens assembly 4,
The received light of second lens assembly, 4 mirror is transferred to infrared narrow band filter 1, and the effect by infrared narrow band filter 1 makes light
Line projects to be imaged on infrared image sensor 5.In the present embodiment, infrared image sensor 5 is 3D infrared image
Sensor.In the present embodiment, infrared image sensor 5 passes through complicated algorithm, including but not limited to structure light
The 3D imaging algorithm mode such as (Structured light), TOF and binocular telemetry, the space that the second lens assembly 4 is acquired
Information and the color information of lens imaging end acquisition combine, and generate the 3D rendering for having spatial information, carry out recognition of face, hand
Gesture identification etc..
To further illustrate the present invention, near-infrared narrow band filter of the invention is illustrated.
Embodiment 1：
First high refractive index layer 121 and the first low-index film 122 alternately are coated with to form near-infrared narrow band filter
IR membrane system.In the present embodiment, the first high refractive index layer 121 uses silane (Si:H) material, the first low-refraction
Film layer 122 uses silicon nitride (i.e. SiN) material, with L (HL)mForm is alternately arranged composition optical filter IR band logical membrane system；Wherein, L
The first low-index film 122 is indicated with the height of 1/4 reference wavelength thickness, H indicates the first high refractive index layer 121 with 1/4 ginseng
The height of wavelength thickness is examined, m indicates the number being alternately coated with.
In the present embodiment, in the range of incidence angle changes from 0 ° to 10 °, the central wavelength drift frames of passband wave band
For degree between 0.5nm~1.5nm, every 1 ° of the variation of incidence angle, the central wavelength drift band of passband wave band is less than 1.5nm.
In the present embodiment, in the range of incidence angle changes from 0 ° to 20 °, the central wavelength drift frames of passband wave band
Degree changes from 10 ° in the range of 20 ° between 2.5nm~8nm, every 1 ° of the variation of incidence angle, the central wavelength of passband wave band
Drift band is less than 6nm.
In the present embodiment, in the range of incidence angle changes from 0 ° to 30 °, the central wavelength drift frames of passband wave band
Degree changes from 20 ° in the range of 30 ° between 8nm~12nm, every 1 ° of the variation of incidence angle, the central wavelength of passband wave band
Drift band is less than 5nm.
In the present embodiment, in the range of incidence angle changes from 0 ° to 40 °, the central wavelength drift frames of passband wave band
Degree changes from 0 ° in the range of 10 ° between 12nm~20nm, every 1 ° of the variation of incidence angle, the central wavelength of passband wave band
Drift band is less than 8nm.
By using following calculation formula：
OTi=OT0(1+Acos (2 × pi × f × i) sin (2 × pi × f × i)),
Wherein, OTiIndicate the optical thickness of the i-th tunic layer, OT0Indicate the optical thickness of a quarter design wavelength size,
Pi indicates that pi, f indicate modulation factor, and size is between 0 to 1.
Substitute into equation:
It is as follows to obtain parameters of film：
| 1 | 2 | 3 | 4 | 5 | |
| Coating materials | SiN | Si:H | SiN | Si:H | SiN |
| Thickness/nm | 30 | 232.89 | 152.83 | 118.43 | 73.61 |
| 6 | 7 | 8 | 9 | 10 | |
| Coating materials | Si:H | SiN | Si:H | SiN | Si:H |
| Thickness/nm | 82.67 | 110.81 | 125.06 | 143.63 | 241.24 |
| 11 | 12 | 13 | 14 | 15 | |
| Coating materials | SiN | Si:H | SiN | Si:H | SiN |
| Thickness/nm | 79.48 | 150.7 | 56.18 | 232.67 | 103.84 |
| 16 | 17 | 18 | 19 | 20 | |
| Coating materials | Si:H | SiN | Si:H | SiN | Si:H |
| Thickness/nm | 244.31 | 313.36 | 272.26 | 76.29 | 73.39 |
| 21 | 22 | 23 | 24 | 25 | |
| Coating materials | SiN | Si:H | SiN | Si:H | SiN |
| Thickness/nm | 371.49 | 84.72 | 26.21 | 288.09 | 122.32 |
| 26 | 27 | 28 | 29 | 30 | |
| Coating materials | Si:H | SiN | Si:H | SiN | Si:H |
| Thickness/nm | 66.8 | 382.21 | 142.68 | 191.9 | 262.73 |
| 31 | 32 | 33 | 34 | 35 | |
| Coating materials | SiN | Si:H | SiN | Si:H | SiN |
| Thickness/nm | 118.05 | 64.98 | 376.7 | 167.58 | 27.7 |
Table 1
As shown in figure 5, and (the IR membrane system thickness i.e. IR membrane system represented in table 1 is coated with by above-mentioned calculated result
Physical thickness, unit：Nm), in the present embodiment, under conditions of meeting IR film layer transmitance, m=17 is taken, IR membrane system
Overall thickness is 5.61 μm, so that IR membrane system thickness of the invention be made to meet design requirement, while being also assured in different incidence angles
Under conditions of, central wavelength drift band also meets above-mentioned design requirement on IR membrane system passband wave band, and IR membrane system 800~
There is a passband wave band within the scope of 1200nm, transmitance is greater than 90%；Passband band is less than 120nm；Passband two sides respectively have 1
A cut-off wave band, for transmitance less than 0.1%, lower transmitance is smaller than 0.001%, ensure that near-infrared filter of the invention
The image quality of mating plate.
Embodiment 2：
First high refractive index layer 121 and the first low-index film 122 alternately are coated with to form near-infrared narrow band filter
IR membrane system.In the present embodiment, the first high refractive index layer 121 uses silane (Si:H) material, the first low-refraction
Film layer 122 uses silicon nitride (i.e. Si3N4) material, with L (HL)mForm is alternately arranged composition optical filter IR band logical membrane system；Wherein, L
The first low-index film 122 is indicated with the height of 1/4 reference wavelength thickness, H indicates the first high refractive index layer 121 with 1/4 ginseng
The height of wavelength thickness is examined, m indicates the number being alternately coated with.
In the present embodiment, in the range of incidence angle changes from 0 ° to 10 °, the central wavelength drift frames of passband wave band
For degree between 0.5nm~1.5nm, every 1 ° of the variation of incidence angle, the central wavelength drift band of passband wave band is less than 1.5nm.
In the present embodiment, in the range of incidence angle changes from 0 ° to 20 °, the central wavelength drift frames of passband wave band
Degree changes from 10 ° in the range of 20 ° between 2.5nm~8nm, every 1 ° of the variation of incidence angle, the central wavelength of passband wave band
Drift band is less than 6nm.
In the present embodiment, in the range of incidence angle changes from 0 ° to 30 °, the central wavelength drift frames of passband wave band
Degree changes from 20 ° in the range of 30 ° between 8nm~12nm, every 1 ° of the variation of incidence angle, the central wavelength of passband wave band
Drift band is less than 5nm.
In the present embodiment, in the range of incidence angle changes from 0 ° to 40 °, the central wavelength drift frames of passband wave band
Degree changes from 0 ° in the range of 10 ° between 12nm~20nm, every 1 ° of the variation of incidence angle, the central wavelength of passband wave band
Drift band is less than 8nm.
By using following calculation formula：
OTi=OT0(1+Acos (2 × pi × f × i) sin (2 × pi × f × i)),
Wherein, OTiIndicate the optical thickness of the i-th tunic layer, OT0Indicate the optical thickness of a quarter design wavelength size,
Pi indicates that pi, f indicate modulation factor, and size is between 0 to 1.
Substitute into equation:
It is as follows to obtain parameters of film：
| 1 | 2 | 3 | 4 | 5 | |
| Coating materials | Si3N4 | Si:H | Si3N4 | Si:H | Si3N4 |
| Film thickness | 234.05 | 73.12 | 193.41 | 79.58 | 113.2 |
| 6 | 7 | 8 | 9 | 10 | |
| Coating materials | Si:H | Si3N4 | Si:H | Si3N4 | Si:H |
| Film thickness | 196.33 | 111.74 | 100.62 | 86 | 115.42 |
| 11 | 12 | 13 | 14 | 15 | |
| Coating materials | Si3N4 | Si:H | Si3N4 | Si:H | Si3N4 |
| Film thickness | 107 | 64.44 | 112.56 | 64.98 | 107.61 |
| 16 | 17 | 18 | 19 | 20 | |
| Coating materials | Si:H | Si3N4 | Si:H | Si3N4 | Si:H |
| Film thickness | 128.77 | 64.31 | 87.54 | 111.36 | 199.79 |
| 21 | 22 | 23 | 24 | 25 | |
| Coating materials | Si3N4 | Si:H | Si3N4 | Si:H | Si3N4 |
| Film thickness | 114.06 | 151.56 | 63.51 | 277.82 | 109.72 |
| 26 | 27 | 28 | 29 | 30 | |
| Coating materials | Si:H | Si3N4 | Si:H | Si3N4 | Si:H |
| Film thickness | 66.15 | 106.45 | 365 | 340.12 | 78.77 |
| 31 | 32 | 33 | 34 | 35 | |
| Coating materials | Si3N4 | Si:H | Si3N4 | Si:H | Si3N4 |
| Film thickness | 110.3 | 226.9 | 110.56 | 95.19 | 45.38 |
Table 2
As shown in fig. 6, and (the IR membrane system thickness i.e. IR membrane system represented in table 2 is coated with by above-mentioned calculated result
Physical thickness, unit：Nm), in the present embodiment, under conditions of meeting IR film layer transmitance, m=17 is taken, IR membrane system
Overall thickness is 4.62 μm, so that IR membrane system thickness of the invention be made to meet design requirement, while being also assured in different incidence angles
Under conditions of, central wavelength drift band also meets above-mentioned design requirement on IR membrane system passband wave band, and IR membrane system 800~
There is a passband wave band within the scope of 1200nm, transmitance is greater than 90%；Passband band is less than 120nm；Passband two sides respectively have 1
A cut-off wave band, for transmitance less than 0.1%, lower transmitance is smaller than 0.001%, ensure that near-infrared filter of the invention
The image quality of mating plate.
Embodiment 3：
First high refractive index layer 121 and the first low-index film 122 alternately are coated with to form near-infrared narrow band filter
IR membrane system.In the present embodiment, the first high refractive index layer 121 uses silane (Si:H) material, the first low-refraction
Film layer 122 uses mixing material, such as silicon nitride (i.e. SiN) and silica (SiO2) mixing material or silicon nitride (i.e. SiN
And Si3N4) mixing material, with L (HL)mForm is alternately arranged composition optical filter IR band logical membrane system；Wherein, L indicates the first low refraction
Rate film layer 122 with the height of 1/4 reference wavelength thickness, H indicate the first high refractive index layer 121 with the height of 1/4 reference wavelength thickness,
M indicates the number being alternately coated with.
In the present embodiment, in the range of incidence angle changes from 0 ° to 10 °, the central wavelength drift frames of passband wave band
For degree between 0.5nm~1.5nm, every 1 ° of the variation of incidence angle, the central wavelength drift band of passband wave band is less than 1.5nm.
In the present embodiment, in the range of incidence angle changes from 0 ° to 20 °, the central wavelength drift frames of passband wave band
Degree changes from 10 ° in the range of 20 ° between 2.5nm~8nm, every 1 ° of the variation of incidence angle, the central wavelength of passband wave band
Drift band is less than 6nm.
In the present embodiment, in the range of incidence angle changes from 0 ° to 30 °, the central wavelength drift frames of passband wave band
Degree changes from 20 ° in the range of 30 ° between 8nm~12nm, every 1 ° of the variation of incidence angle, the central wavelength of passband wave band
Drift band is less than 5nm.
In the present embodiment, in the range of incidence angle changes from 0 ° to 40 °, the central wavelength drift frames of passband wave band
Degree changes from 0 ° in the range of 10 ° between 12nm~20nm, every 1 ° of the variation of incidence angle, the central wavelength of passband wave band
Drift band is less than 8nm.
By using following calculation formula：
OTi=OT0(1+Acos (2 × pi × f × i) sin (2 × pi × f × i)),
Wherein, OTiIndicate the optical thickness of the i-th tunic layer, OT0Indicate the optical thickness of a quarter design wavelength size,
Pi indicates that pi, f indicate modulation factor, and size is between 0 to 1.
Substitute into equation:
It is as follows to obtain parameters of film：
Table 3
As shown in fig. 7, and (the IR membrane system thickness i.e. IR membrane system represented in table 3 is coated with by above-mentioned calculated result
Physical thickness, unit：Nm, and Mixture indicates mixing material), in the present embodiment, meeting IR film layer transmitance
Under the conditions of, m=16 is taken, the overall thickness of IR membrane system is 5.11 μm, to make IR membrane system thickness of the invention meet design requirement, together
When also assure under conditions of different incidence angles, central wavelength drift band also meets above-mentioned design on IR membrane system passband wave band
It is required that and IR membrane system have a passband wave band within the scope of 800~1200nm, transmitance is greater than 90%；Passband band
Less than 120nm；Respectively there are 1 cut-off wave band in passband two sides, and less than 0.1%, lower transmitance is smaller than transmitance
0.001%, it ensure that the image quality of near infrared filter of the invention.
Embodiment 4：
First high refractive index layer 121 and the first low-index film 122 alternately are coated with to form near-infrared narrow band filter
IR membrane system.In the present embodiment, the first high refractive index layer 121 uses silane (Si:H) material, the first low-refraction
Film layer 122 uses silica (SiO2) material, with (LH)mL form is alternately arranged composition optical filter IR band logical membrane system；Wherein, L
The first low-index film 122 is indicated with the height of 1/4 reference wavelength thickness, H indicates the first high refractive index layer 121 with 1/4 ginseng
The height of wavelength thickness is examined, m indicates the number being alternately coated with.
Second high refractive index layer 131 and the second low-index film 132 alternately are coated with to form near-infrared narrow band filter
AR membrane system.In the present embodiment, the second high refractive index layer 131 uses niobium pentaoxide (Nb2O5) material, the second low folding
It penetrates rate film layer 132 and uses silica (SiO2) material is (it should be pointed out that due to niobium pentaoxide (Nb2O5) refractive index it is high
In silica (SiO2) refractive index, therefore niobium pentaoxide (Nb2O5) it also can be used as the material of the second high refractive index layer 131
Material.), with (LH)sL form is alternately arranged composition optical filter AR band logical membrane system；Wherein, L indicate the second low-index film 132 with
The height of 1/4 reference wavelength thickness, H indicate the second high refractive index layer 131 with the height of 1/4 reference wavelength thickness, and s indicates alternately to plate
The number of system.
In the present embodiment, in the range of incidence angle changes from 0 ° to 10 °, the central wavelength drift frames of passband wave band
For degree between 0.5nm~1.5nm, every 1 ° of the variation of incidence angle, the central wavelength drift band of passband wave band is less than 1.5nm.
In the present embodiment, in the range of incidence angle changes from 0 ° to 20 °, the central wavelength drift frames of passband wave band
Degree changes from 10 ° in the range of 20 ° between 2.5nm~8nm, every 1 ° of the variation of incidence angle, the central wavelength of passband wave band
Drift band is less than 6nm.
In the present embodiment, in the range of incidence angle changes from 0 ° to 30 °, the central wavelength drift frames of passband wave band
Degree changes from 20 ° in the range of 30 ° between 8nm~12nm, every 1 ° of the variation of incidence angle, the central wavelength of passband wave band
Drift band is less than 5nm.
In the present embodiment, in the range of incidence angle changes from 0 ° to 40 °, the central wavelength drift frames of passband wave band
Degree changes from 0 ° in the range of 10 ° between 12nm~20nm, every 1 ° of the variation of incidence angle, the central wavelength of passband wave band
Drift band is less than 8nm.
By using following calculation formula：
OTi=OT0(1+Acos (2 × pi × f × i) sin (2 × pi × f × i)),
Wherein, OTiIndicate the optical thickness of the i-th tunic layer, OT0Indicate the optical thickness of a quarter design wavelength size,
Pi indicates that pi, f indicate modulation factor, and size is between 0 to 1.
Substitute into equation:
It is as follows to obtain parameters of film：
Table 4
| 1 | 2 | 3 | 4 | 5 | |
| Material | SiO2 | Nb2O5 | SiO2 | Nb2O5 | SiO2 |
| Thickness (nm) | 177.36 | 29.01 | 86.24 | 34.26 | 137.61 |
| 6 | 7 | 8 | 9 | 10 | |
| Material | Nb2O5 | SiO2 | Nb2O5 | SiO2 | Nb2O5 |
| Thickness (nm) | 42.57 | 105.57 | 32.63 | 124.57 | 39.38 |
| 11 | 12 | 13 | 14 | 15 | |
| Material | SiO2 | Nb2O5 | SiO2 | Nb2O5 | SiO2 |
| Thickness (nm) | 127.56 | 36.38 | 121.12 | 36.38 | 123.16 |
| 16 | 17 | 18 | 19 | 20 | |
| Material | Nb2O5 | SiO2 | Nb2O5 | SiO2 | Nb2O5 |
| Thickness (nm) | 31.7 | 132.74 | 44.2 | 128.03 | 27.69 |
| 21 | 22 | 23 | 24 | 25 | |
| Material | SiO2 | Nb2O5 | SiO2 | Nb2O5 | SiO2 |
| Thickness (nm) | 110.12 | 44.01 | 131.96 | 36.76 | 76.98 |
Table 5
In conjunction with shown in Fig. 8 and Fig. 9, and pass through above-mentioned calculated result (the IR thicknesses of layers represented in table 4 i.e. IR membrane system
Physical thickness (the unit being coated with：Nm physical thickness (the unit that the AR thicknesses of layers) and in table 5 represented i.e. AR membrane system is coated with：
Nm)), in the present embodiment, under conditions of meeting IR film layer transmitance and AR film layer transmitance, m=15, s=12, IR are taken
The overall thickness of membrane system and AR membrane system is respectively 5.19 μm and 2.02 μm, to keep IR membrane system and AR membrane system thickness of the invention full
Sufficient design requirement, while also assuring under conditions of different incidence angles, central wavelength drift band on IR membrane system passband wave band
Also meet above-mentioned design requirement, and IR membrane system has a passband wave band within the scope of 800~1200nm, transmitance is greater than
90%；Passband band is less than 400nm；There are 2 cut-off wave bands, respectively in passband two sides, transmitance is less than 0.1%, AR
Membrane system has a pass band areas within the scope of 350~1200nm, one by region, transmitance is respectively greater than 90% and is less than
0.1%；800~1200 there are a transitional region, transmitance ensure that of the invention close between 0.1%~90%
The image quality of infrared fileter.
Embodiment 5：
First high refractive index layer 121 and the first low-index film 122 alternately are coated with to form near-infrared narrow band filter
IR membrane system.In the present embodiment, the first high refractive index layer 121 uses silane (Si:H) material, the first low-refraction
Film layer 122 uses silica (SiO2) material, with (LH)mL form is alternately arranged composition optical filter IR band logical membrane system；Wherein, L
The first low-index film 122 is indicated with the height of 1/4 reference wavelength thickness, H indicates the first high refractive index layer 121 with 1/4 ginseng
The height of wavelength thickness is examined, m indicates the number being alternately coated with.
Second high refractive index layer 131 and the second low-index film 132 alternately are coated with to form near-infrared narrow band filter
AR membrane system.In the present embodiment, the second high refractive index layer 131 uses silane (Si:H) material, the second low-refraction
Film layer 132 uses silica (SiO2) material, with (LH)sL form is alternately arranged composition optical filter AR band logical membrane system；Wherein, L
The second low-index film 132 is indicated with the height of 1/4 reference wavelength thickness, H indicates the second high refractive index layer 131 with 1/4 ginseng
The height of wavelength thickness is examined, s indicates the number being alternately coated with.
In the present embodiment, in the range of incidence angle changes from 0 ° to 10 °, the central wavelength drift frames of passband wave band
For degree between 0.5nm~1.5nm, every 1 ° of the variation of incidence angle, the central wavelength drift band of passband wave band is less than 1.5nm.
In the present embodiment, in the range of incidence angle changes from 0 ° to 20 °, the central wavelength drift frames of passband wave band
Degree changes from 10 ° in the range of 20 ° between 2.5nm~8nm, every 1 ° of the variation of incidence angle, the central wavelength of passband wave band
Drift band is less than 6nm.
In the present embodiment, in the range of incidence angle changes from 0 ° to 30 °, the central wavelength drift frames of passband wave band
Degree changes from 20 ° in the range of 30 ° between 8nm~12nm, every 1 ° of the variation of incidence angle, the central wavelength of passband wave band
Drift band is less than 5nm.
In the present embodiment, in the range of incidence angle changes from 0 ° to 40 °, the central wavelength drift frames of passband wave band
Degree changes from 0 ° in the range of 10 ° between 12nm~20nm, every 1 ° of the variation of incidence angle, the central wavelength of passband wave band
Drift band is less than 8nm.
By using following calculation formula：
OTi=OT0(1+Acos (2 × pi × f × i) sin (2 × pi × f × i)),
Wherein, OTiIndicate the optical thickness of the i-th tunic layer, OT0Indicate the optical thickness of a quarter design wavelength size,
Pi indicates that pi, f indicate modulation factor, and size is between 0 to 1.
Substitute into equation：
It is as follows to obtain parameters of film：
Table 6
| 1 | 2 | 3 | 4 | 5 | |
| Coating materials | SiO2 | Si:H | SiO2 | Si:H | SiO2 |
| Film thickness | 118.99 | 144.41 | 121.91 | 40.98 | 99.76 |
| 6 | 7 | 8 | 9 | 10 | |
| Coating materials | Si:H | SiO2 | Si:H | SiO2 | Si:H |
| Film thickness | 38.13 | 108.77 | 46.76 | 96.72 | 40 |
| 11 | 12 | 13 | 14 | 15 | |
| Coating materials | SiO2 | Si:H | SiO2 | Si:H | SiO2 |
| Film thickness | 21 | 105 | 114.2 | 162.36 | 134.9 |
| 16 | 17 | 18 | 19 | 20 | |
| Coating materials | Si:H | SiO2 | Si:H | SiO2 | Si:H |
| Film thickness | 20 | 20 | 20 | 86.73 | 41.24 |
| 21 | 22 | 23 | 24 | 25 | |
| Coating materials | SiO2 | Si:H | SiO2 | Si:H | SiO2 |
| Film thickness | 117.94 | 60.05 | 45.65 | 53.89 | 139.6 |
Table 7
In conjunction with shown in Figure 10 and Figure 11, and pass through above-mentioned calculated result (the IR thicknesses of layers represented in table 6 i.e. IR film
It is the physical thickness (unit being coated with：Nm physical thickness (the unit that the AR thicknesses of layers) and in table 7 represented i.e. AR membrane system is coated with：
Nm)), in the present embodiment, under conditions of meeting IR film layer transmitance and AR film layer transmitance, m=10, s=12, IR are taken
The overall thickness of membrane system and AR membrane system is respectively 3.16 μm and 2 μm, so that IR membrane system and AR membrane system thickness of the invention be made to be all satisfied
Design requirement, and IR membrane system has a passband wave band within the scope of 800~1200nm, and transmitance is greater than 90%；Passband wave band
Bandwidth is less than 400nm；Have 2 cut-off wave bands, respectively in passband two sides, transmitance less than 0.1%, AR membrane system 350~
Have a pass band areas within the scope of 1200nm, one by region, transmitance is respectively greater than 90% and less than 0.1%；800~
1200 there are a transitional region, and transmitance also assures the condition in different incidence angles between 0.1%~90%
Under, central wavelength drift band also meets above-mentioned design requirement on IR membrane system passband wave band, ensure that near-infrared filter of the invention
The image quality of mating plate.
Above content is only the example of concrete scheme of the invention, for the equipment and structure of wherein not detailed description, is answered
When being interpreted as that the existing common apparatus in this field and universal method is taken to be practiced.
The foregoing is merely a schemes of the invention, are not intended to restrict the invention, for the technology of this field
For personnel, the invention may be variously modified and varied.All within the spirits and principles of the present invention, made any to repair
Change, equivalent replacement, improvement etc., should all be included in the protection scope of the present invention.
Claims (18)
1. a kind of near-infrared narrow band filter, which is characterized in that including：Substrate (11) is arranged in the substrate (11) side
IR membrane system (12)；
The IR membrane system (12) includes the first high refractive index layer (121) and the first low-index film (122) being alternately coated with,
The outermost layer of the IR membrane system (12) is the first low-index film (122)；In the wave-length coverage of 800~1200nm, institute
IR membrane system (12) are stated with a passband wave band, two transition wave bands and two cut-off wave bands, the passband wave band is located at two
Between described two cut-off wave bands, the little bellow section is between the passband wave band and the cut-off wave band；
The passband wave band has central wavelength, and in the range of incidence angle changes from 0 ° to 30 °, in the passband wave band
Heart wave length shift amplitude is between 7nm~13nm.
2. near-infrared narrow band filter according to claim 1, which is characterized in that change from 20 ° to 30 ° in incidence angle
In range, every 1 ° of the variation of incidence angle, the central wavelength drift band of the passband wave band is less than 5nm.
3. near-infrared narrow band filter according to claim 2, which is characterized in that the passband band is less than
400nm。
4. near-infrared narrow band filter according to claim 3, which is characterized in that in the wave-length coverage of 800~1200nm
Interior, the passband wave band transmitance is greater than 90%, and the cut-off wave band transmitance is less than 0.1%.
5. near-infrared narrow band filter according to claim 4, which is characterized in that the side passband wave band UV and IR lateral curvature
Line steepness is between 7nm~13nm.
6. near-infrared narrow band filter according to any one of claims 1 to 5, which is characterized in that first high refractive index
Film layer (121) is layer of hydrogenated；
In the wave-length coverage of 800~1200nm, the refractive index of first high refractive index layer (121) is greater than 3.5, and delustring
Coefficient is less than 0.002.
7. near-infrared narrow band filter according to claim 6, which is characterized in that at 850nm wavelength, described first is high
Refractivity film layer (121) refractive index is greater than 3.6；
At 940nm wavelength, the first high refractive index layer (121) refractive index is greater than 3.55.
8. near-infrared narrow band filter according to claim 6, which is characterized in that first high refractive index layer
It (121) is sputtering reaction film layer, in the presence of hydrogen, sputtering reaction temperature is 80 DEG C~300 DEG C, and sputter rate is
0.1nm/s≤v≤1nm/s。
9. near-infrared narrow band filter according to claim 8, which is characterized in that the hydrogen is drawn with adjustable flow
Enter, and its flow meets 10sccm≤v1≤50sccm.
10. according to claim 1 or near-infrared narrow band filter described in 9, which is characterized in that first high refractive index layer
(121) meet with the physical thickness relationship of first low-index film (122)：0.01≤DL/DH≤ 100, wherein DL、DH
Respectively indicate the physical thickness of the first low-index film and the first high refractive index layer.
11. near-infrared narrow band filter according to claim 1, which is characterized in that change from 0 ° to 10 ° in incidence angle
In range, the central wavelength drift band of the passband wave band is between 0.5nm~1.5nm, and every 1 ° of the variation of incidence angle is described
The central wavelength drift band of passband wave band is less than 1.5nm；
In the range of incidence angle changes from 0 ° to 20 °, the central wavelength drift band of the passband wave band between 2.5nm~
Between 8nm, change from 10 ° in the range of 20 °, every 1 ° of the variation of incidence angle, the central wavelength drift band of the passband wave band
Less than 6nm；
In the range of incidence angle changes from 0 ° to 40 °, the central wavelength drift band of the passband wave band between 12nm~
Between 20nm, change from 0 ° in the range of 10 °, every 1 ° of the variation of incidence angle, the central wavelength drift band of the passband wave band
Less than 8nm.
12. near-infrared narrow band filter according to claim 1, which is characterized in that further include AR membrane system (13)；
The IR membrane system (12) and the opposite two sides positioned at the substrate (11) of the AR membrane system (13)；
The AR membrane system (13) includes the second high refractive index layer (131) and the second low-index film (132) being alternately coated with,
The outermost layer of the AR membrane system (13) is the second low-index film (132).
13. near-infrared narrow band filter according to claim 12, which is characterized in that in the wavelength model of 350~1200nm
In enclosing, the AR membrane system (13) has a pass band areas, and its transmitance is greater than 90%, a cut-off region, and it is penetrated
Rate is less than 0.1%；
In the wave-length coverage of 800~1200nm, the AR membrane system (13) also have a transitional region, and its transmitance between
Between 0.1%~90%.
14. near-infrared narrow band filter according to claim 12 or 13, which is characterized in that the IR membrane system (12) and institute
The film layer overall thickness of AR membrane system (13) is stated less than 9.8 μm.
15. near-infrared narrow band filter according to claim 14, which is characterized in that the near-infrared narrow band filter
Full width at half maximum value is less than 120nm.
16. near-infrared narrow band filter according to claim 12 or 13, which is characterized in that first low refractive index film
The refractive index of layer (122) is less than 3, and its material is SiO2、Nb2O5、Ta2O5、TiO2、Al2O3、ZrO2、Pr6O11、La2O3、Si2N、
SiN、Si2N3、Si3N4One of or a variety of combinations；
The refractive index of second low-index film (132) is less than 3, and its material is SiO2、Nb2O5、Ta2O5、TiO2、
Al2O3、ZrO2、Pr6O11、La2O3、Si2N、SiN、Si2N3、Si3N4One of or a variety of combinations.
17. a kind of infrared imaging system using any near-infrared narrow band filter of claim 1 to 16, feature exist
In, including IR emission system and IR reception system；
The IR emission system includes the first of IR transmitting light source (2) and the light for projecting IR transmitting light source (2) sending
Lens assembly (3)；
It includes near-infrared narrow band filter (1), the second lens assembly (4) and infrared image sensor (5) that the IR, which receives system,；
The infrared narrow band filter (1) is between second lens assembly (4) and the infrared image sensor (5).
18. infrared imaging system according to claim 17, which is characterized in that first lens assembly (3) includes red
Outer light source collimates the diffraction component (32) of camera lens (31) and setting on infrared light supply collimation camera lens (31).
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