CN109061785A - AR film layer and optical filter for near-infrared narrow band filter - Google Patents
AR film layer and optical filter for near-infrared narrow band filter Download PDFInfo
- Publication number
- CN109061785A CN109061785A CN201810884742.3A CN201810884742A CN109061785A CN 109061785 A CN109061785 A CN 109061785A CN 201810884742 A CN201810884742 A CN 201810884742A CN 109061785 A CN109061785 A CN 109061785A
- Authority
- CN
- China
- Prior art keywords
- refractive index
- index material
- layer
- film layer
- material layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000003287 optical effect Effects 0.000 title claims abstract description 22
- 239000000463 material Substances 0.000 claims abstract description 198
- 239000011521 glass Substances 0.000 claims abstract description 30
- 239000000758 substrate Substances 0.000 claims abstract description 30
- 230000007704 transition Effects 0.000 claims description 17
- 238000004544 sputter deposition Methods 0.000 claims description 5
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 4
- 229910052739 hydrogen Inorganic materials 0.000 claims description 4
- 239000001257 hydrogen Substances 0.000 claims description 4
- 230000008033 biological extinction Effects 0.000 claims description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 60
- ZKATWMILCYLAPD-UHFFFAOYSA-N niobium pentoxide Chemical compound O=[Nb](=O)O[Nb](=O)=O ZKATWMILCYLAPD-UHFFFAOYSA-N 0.000 description 30
- 239000000377 silicon dioxide Substances 0.000 description 30
- 229910052681 coesite Inorganic materials 0.000 description 26
- 229910052906 cristobalite Inorganic materials 0.000 description 26
- 229910052682 stishovite Inorganic materials 0.000 description 26
- 229910052905 tridymite Inorganic materials 0.000 description 26
- 238000002834 transmittance Methods 0.000 description 10
- 238000010586 diagram Methods 0.000 description 6
- 230000035515 penetration Effects 0.000 description 6
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 4
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 239000012528 membrane Substances 0.000 description 4
- MEYZYGMYMLNUHJ-UHFFFAOYSA-N tunicamycin Natural products CC(C)CCCCCCCCCC=CC(=O)NC1C(O)C(O)C(CC(O)C2OC(C(O)C2O)N3C=CC(=O)NC3=O)OC1OC4OC(CO)C(O)C(O)C4NC(=O)C MEYZYGMYMLNUHJ-UHFFFAOYSA-N 0.000 description 4
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 229910000077 silane Inorganic materials 0.000 description 3
- 229910002637 Pr6O11 Inorganic materials 0.000 description 2
- 229910007261 Si2N3 Inorganic materials 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 230000001070 adhesive effect Effects 0.000 description 2
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 2
- 230000003667 anti-reflective effect Effects 0.000 description 2
- 229910052593 corundum Inorganic materials 0.000 description 2
- MRELNEQAGSRDBK-UHFFFAOYSA-N lanthanum oxide Inorganic materials [O-2].[O-2].[O-2].[La+3].[La+3] MRELNEQAGSRDBK-UHFFFAOYSA-N 0.000 description 2
- KTUFCUMIWABKDW-UHFFFAOYSA-N oxo(oxolanthaniooxy)lanthanum Chemical compound O=[La]O[La]=O KTUFCUMIWABKDW-UHFFFAOYSA-N 0.000 description 2
- PBCFLUZVCVVTBY-UHFFFAOYSA-N tantalum pentoxide Inorganic materials O=[Ta](=O)O[Ta](=O)=O PBCFLUZVCVVTBY-UHFFFAOYSA-N 0.000 description 2
- 229910001845 yogo sapphire Inorganic materials 0.000 description 2
- 241000208340 Araliaceae Species 0.000 description 1
- 235000005035 Panax pseudoginseng ssp. pseudoginseng Nutrition 0.000 description 1
- 235000003140 Panax quinquefolius Nutrition 0.000 description 1
- -1 Si2N Inorganic materials 0.000 description 1
- 229910003978 SiClx Inorganic materials 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 239000006117 anti-reflective coating Substances 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 235000008434 ginseng Nutrition 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000005764 inhibitory process Effects 0.000 description 1
- 230000013011 mating Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 239000010955 niobium Substances 0.000 description 1
- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 description 1
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000008439 repair process Effects 0.000 description 1
- 230000035807 sensation Effects 0.000 description 1
- 230000000392 somatic effect Effects 0.000 description 1
- 229910052959 stibnite Inorganic materials 0.000 description 1
- 238000007738 vacuum evaporation Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/20—Filters
- G02B5/201—Filters in the form of arrays
Abstract
The present invention relates to a kind of AR film layers and optical filter for near-infrared narrow band filter, wherein the AR film layer (1) is coated on the glass substrate (2) of the optical filter, and the AR film layer (1) includes first refractive index material layer and the second refractive index material or including first refractive index material layer, the second refractive index material and third reflect rate material；The refractive index of the third reflect rate material layer is greater than the first refractive index material layer refractive index, and the refractive index of second refractive index material is greater than the refractive index of the third reflect rate material layer.Optical filter is made using AR film layer of the invention, thicknesses of layers can be reduced in the case where guaranteeing near infrared light transmitance, be effectively improved the film adhesion of optical filter.
Description
Technical field
The invention belongs to optical sensing technology field more particularly to a kind of AR film layers for near-infrared narrow band filter.
Background technique
With the development of science and technology, in smart phone, mobile lidar, safe burglar-proof gate inhibition, smart home, virtual reality/increasing
Face equipment, gesture identification etc. are gradually embedded in the terminals such as strong reality/mixed reality, 3D somatic sensation television game, 3D camera shooting and display
Function.
It needs to use near-infrared narrow band filter in recognition of face, gesture identification, can play close red in anti-reflection passband
UV light ends the effect of visible light in environment.Usual near-infrared narrow band filter includes two membrane systems, respectively IR band logical
Membrane system and long wave lead to AR membrane system.However antireflective effect and cut-off of the optical filter AR film layer near infrared light in the prior art
The effect of visible light is poor, exists simultaneously the problem that membrane system thicknesses of layers is thicker and film adhesion is poor, so as to cause inciting somebody to action
After filter set is attached to the devices such as recognition of face, gesture identification, imaging effect is poor, accuracy of identification is not high.
Summary of the invention
The purpose of the present invention is to provide a kind of AR film layers and optical filter for near-infrared narrow band filter, solve existing
Have that the AR film layer structure near infrared light antireflective effect of optical filter is poor, problem of film adhesion difference.
To achieve the above object, the present invention provides a kind of AR film layer for near-infrared narrow band filter, the AR film layer
It is coated on the glass substrate of the optical filter, the AR film layer includes first refractive index material layer and the second refractive index material
Or including first refractive index material layer, the second refractive index material and third reflect rate material layer；
The refractive index of the third reflect rate material layer be greater than the first refractive index material layer refractive index, described second
The refractive index of refractive index material is greater than the refractive index of the third reflect rate material layer.
According to an aspect of the present invention, along the direction far from the glass substrate, the outermost layer of the AR film layer is the
One refractive index material.
According to an aspect of the present invention, along the direction far from the glass substrate, the structure of the AR film layer is successively
For (LH) * q, L, wherein L indicates that first refractive index material layer, H indicate that the second refractive index material, (LH) * q indicate the first folding
It penetrates rate material layer and the second refractive index material is arranged alternately q times, q is the integer more than or equal to 1.
According to an aspect of the present invention, along the direction far from the glass substrate, the structure of the AR film layer is successively
For M, (LH) * k, L, wherein M indicates that third reflect rate material layer, L indicate that first refractive index material layer, H indicate the second refractive index
Material layer, (LH) * k indicate that first refractive index material layer and the second refractive index material are arranged alternately k times, and k is more than or equal to 1
Integer.
According to an aspect of the present invention, along the direction far from the glass substrate, the structure of the AR film layer is successively
For (LH) * n, L, M, (LH) * p, L, wherein L indicates that first refractive index material layer, H indicate the second refractive index material, (LH) *
N indicates first refractive index material layer and the second refractive index material is arranged alternately n times, and n is the integer more than or equal to 0, (LH) * p
Indicate that first refractive index material layer and the second refractive index material are arranged alternately p times, p is the integer more than or equal to 1.
According to an aspect of the present invention, the second refractive index material physical thickness and the first refractive index material
Bed of material physical thickness meets relational expression: 0.05≤DL/DH≤ 20, the third reflect rate material layer physical thickness and described second
Refractive index material physical thickness meets relational expression: 0.02≤DM/DH≤50。
According to an aspect of the present invention, second refractive index material is layer of hydrogenated, in 800-1200nm wavelength
Refractive index in range is greater than 3, and extinction coefficient is less than 0.002；
Second refractive index material refractive index at 850nm is greater than 3.6, and refractive index is greater than 3.55 at 940nm.
According to an aspect of the present invention, the layer of hydrogenated is that sputtering reaction is coated with material layer, and sputter temperature range is
80-300 degrees Celsius, hydrogen flowing quantity 10-50sccm, sputter rate 0.1nm/s-1nm/s.
According to an aspect of the present invention, in 800-1200nm wave-length coverage, the folding of the third reflect rate material layer
Rate is penetrated less than 4, the refractive index of the first refractive index material layer is less than 3.
According to an aspect of the present invention, the AR film layer has a passband wave in 350-1200nm wave-length coverage
Section, a cut-off wave band and a transition wave band, along the direction from 350nm to 1200nm, the cut-off wave band, the mistake
Cross wave band and passband subband order arrangement；
The transmitance of the passband wave band is greater than 90%；
The transmitance of the transition wave band is 0.1%-90%；
The transmitance of the cut-off wave band is less than 0.1%..
The present invention provides a kind of optical filter, including glass substrate and the AR film layer being coated on the glass substrate.
A scheme according to the present invention, AR film layer of the invention are configured in the manner described above, close being effectively ensured
While infrared light high transmittance, due to being provided with third reflect rate material layer M in AR film layer, middle filter compared with the prior art
The AR film layer of mating plate effectively reduces total thicknesses of layers, while can improve the adhesive force of film layer.
Detailed description of the invention
Fig. 1 is the configuration diagram schematically shown according to the AR film layer for inventing a kind of embodiment；
Fig. 2 is the configuration diagram for schematically showing the AR film layer according to second of embodiment of invention.
Fig. 3 is the configuration diagram schematically shown according to the AR film layer for inventing the third embodiment.
Fig. 4 is the wavelength of light transmittance curve figure for schematically showing AR film layer in embodiment 1；
Fig. 5 is the wavelength of light transmittance curve figure for schematically showing AR film layer in embodiment 2；
Fig. 6 is the wavelength of light transmittance curve figure for schematically showing AR film layer in embodiment 3；
Fig. 7 is the wavelength of light transmittance curve figure for schematically showing AR film layer in embodiment 4.
Specific embodiment
It, below will be to embodiment party in order to illustrate more clearly of embodiment of the present invention or technical solution in the prior art
Attached drawing needed in formula is briefly described.It should be evident that the accompanying drawings in the following description is only of the invention one
A little embodiments for those of ordinary skills without creative efforts, can also basis
These attached drawings obtain other attached drawings.
When being described for embodiments of the present invention, term " longitudinal direction ", " transverse direction ", "upper", "lower", " preceding ",
" rear ", "left", "right", "vertical", "horizontal", "top", "bottom" "inner", orientation or positional relationship is to be based on expressed by "outside"
Orientation or positional relationship shown in relevant drawings, is merely for convenience of description of the present invention and simplification of the description, rather than indicate or
Imply that signified device or element must have a particular orientation, be constructed and operated in a specific orientation, therefore above-mentioned term is not
It can be interpreted as limitation of the present invention.
The present invention is described in detail with reference to the accompanying drawings and detailed description, embodiment cannot herein one by one
It repeats, but therefore embodiments of the present invention are not defined in following implementation.
Fig. 1 is the configuration diagram schematically shown according to the AR film layer for inventing a kind of embodiment.As shown in Fig. 1, this hair
Bright AR film layer 1 is for being coated with near-infrared narrow band filter, and AR film layer 1 is coated on glass substrate 2, and glass substrate 1 can be adopted
With D263T or AF32.In the present embodiment, AR film layer 1 is anti-reflection film layer, i.e. antireflective coating can be in particular range
Wavelength play the role of it is anti-reflection.AR film layer 1 is coated on the lower surface of glass substrate 2, is coated in the upper surface of glass substrate 2
IR film layer.
As shown in Figure 1, in the present embodiment, the AR film layer 1 for near-infrared narrow band filter of the invention includes the
One refractive index material L and the second refractive index material H, specifically, along the direction far from glass substrate 2, AR film layer 1
It successively include first refractive index material layer L, the second refractive index material H and first refractive index material layer L.I.e. in this embodiment party
In formula, 1 structure of AR film layer can be expressed as (LH), L, i.e., along the direction far from glass substrate 2, AR film layer 1 includes two layers altogether
Structure, be followed successively by first structure layer made of being alternately coated with as first refractive index material layer L and the second refractive index material H and
Outermost first refractive index material layer L.In addition, first refractive index material in first structure layer in AR film layer 1 of the present invention
Layer L and the second refractive index material H is alternately or multiple, i.e., 1 structure of AR film layer can be expressed as (LH) * q, L, (LH) *
Q indicates that first refractive index material layer L and the second refractive index material H is arranged alternately q times, the desirable integer more than or equal to 1 of q.
Fig. 2 is the configuration diagram for schematically showing the AR film layer according to second of embodiment of invention.As shown in Fig. 2,
In present embodiment, along this direction far from glass substrate 2, AR film layer 1 of the invention includes third reflect rate material layer M, the
One refractive index material L, the second refractive index material H and outermost layer first refractive index material layer L, i.e., in the present embodiment,
AR film layer 1 includes three-decker altogether, successively the third reflect rate material layer M of innermost layer, by first refractive index material layer L and the
Intermediate structure layer and outermost layer first refractive index material layer L made of two refractive index material H are alternately coated with, in addition, of the invention
First refractive index material layer L and the second refractive index material H in the intermediate layer of material of AR layer 1 repeatedly can also alternately be set
Set, i.e. second of embodiment of AR film layer 1 according to the present invention, the structure of AR film layer 1 can be M, (LH) * k, L, i.e., along
Direction far from glass substrate 2, AR film layer 1 successively include third reflect rate material layer M, intermediate layer of material and first refractive index
Material layer L, intermediate layer of material are that first refractive index material layer L and the second refractive index material H is arranged alternately k composition, and k is
Integer more than or equal to 1.
Fig. 3 is the configuration diagram schematically shown according to the AR film layer for inventing the third embodiment.As shown in figure 3,
In present embodiment, along the direction far from glass substrate 2, AR film layer 1 successively includes first refractive index material layer L, the second folding
Penetrate rate material layer H, first refractive index material layer L, third reflect rate material layer M, first refractive index material layer L, the second refractive index
Material layer H and first refractive index material layer L, in the present embodiment, AR film layer 1 includes five film structures altogether, successively it is outer by
First structure made of first refractive index material layer L and the second refractive index material H are alternately coated with, by first refractive index material
The second structure that layer L is constituted, the third structure being made of third reflect rate material layer, by first refractive index material layer L and the
4th structure and outermost first refractive index material layer L made of two refractive index material H are alternately coated with.In addition, the first knot
The first refractive index material layer L of structure and the second refractive index material H can be arranged alternately repeatedly, the first refractive of the 4th structure
Rate material layer L and the second refractive index material H can be arranged alternately repeatedly, i.e., the third embodiment according to the present invention, AR
The structure of film layer 1 can be (LH) * n, L, M, (LH) * p, L, and n can be the integer more than or equal to 0.P is whole more than or equal to 1
Number.
AR film layer 1 of the invention can be selected from any one of above embodiment, it should be noted that guarantee film
Which kind of embodiment no matter the superiority of layer structural behaviour use, and the outermost layer of AR film layer 1 is disposed as first refractive index material
Bed of material L.
AR film layer 1 of the invention, the second refractive index material H involved in film layer structure can be layer of hydrogenated, hydrogen
SiClx layer is coated with by the way of sputtering reaction when being coated with, and temperature is controlled when being coated within the scope of 80 DEG C -300 DEG C, controls hydrogen
Throughput is 10-50sccm, and control sputtering rate is 0.1nm/s-1nm/s, so that the second refractive index material of the invention
Refractive index of the H within the scope of 800-1200nm is greater than 3, and extinction coefficient is less than 0.002, and refractive index is greater than 3.6 at 850nm,
Refractive index at 960nm is greater than 3.55, and then is conducive to adjust the offset of optical filter passband center wavelengths of the present invention.Certainly,
Other materials can be used also to realize in second refractive index material H involved in the present invention, as long as can guarantee the second folding
The refractive index for penetrating rate material layer H is greater than the refractive index of first refractive index material layer L and third reflect rate material layer M.
Material used in third reflect rate material layer M involved in AR film layer 1 can be selected from Sb2S3、Nb2O5、 Ta2O5、
TiO2、Al2O3、ZrO2、Pr6O11、La2O3、Si2N、SiN、Si2N3、Si3N4One of or it is a variety of, involved in AR film layer 1
Material used in first refractive index material layer L can be selected from SiO2、Nb2O5、Ta2O5、TiO2、Al2O3、ZrO2、Pr6O11、La2O3、
Si2N、SiN、Si2N3、Si3N4One of or it is a variety of.In 800-1200nm wave-length coverage, third reflect rate material layer M's
Refractive index is less than 4, and the refractive index of first refractive index material layer L is less than 3.Need to guarantee the refraction of third reflect rate material layer M
Rate is greater than the refractive index of first refractive index material layer L, i.e., after first refractive index material layer L selects one of above-mentioned material,
The material selection of third reflect rate material layer M, the refractive index that should meet the material of third reflect rate material layer M selection are greater than the
The refractive index for the material that one refractive index material L is selected.Third reflect rate material layer M and first refractive index material layer L are being coated with
When can using sputtering consersion unit be coated with, also can use vacuum evaporation apparatus and be coated with.
AR film layer of the invention is described in detail below by way of specific embodiment.
Embodiment 1:
In the present embodiment, along the direction far from glass substrate 2, the structure of AR film layer 1 is (LH) * q, L, q=
12.Meet relational expression between the physical thickness of second refractive index material H and the physical thickness of first refractive index material layer L:
0.05≤DL/DH≤ 20, third reflect rate material layer M physical thickness and the second refractive index material H physical thickness meet relationship
Formula: 0.02≤DM/DH≤50。
That is, in the present embodiment, AR film layer 1 includes 25 layer of material altogether.In the present embodiment, it selects
Silane selects silica as first refractive index material L as the second refraction materials H.Utilize formula OTi=OT (1+
Acos (2 × pi × f × i) sin (2 × pi × f × i)), substitute into equationObtain film layer ginseng
Number is as follows:
Wherein, OTiIndicate the optical thickness of the i-th tunic layer, OT0Indicate that the optics of a quarter design wavelength size is thick
Degree, pi indicate that pi, f indicate modulation factor, and size is between 0 to 1.
Table 1 shows the parameter of each material layer of AR film layer 1:
Table 1
As shown in figure 4, AR film layer 1 of the invention is arranged referring to each conditional parameter in embodiment 1, in 350-1200nm wave
Long range, AR film layer 1 have a passband wave band, a cut-off wave band and a transition wave band, i.e., along from 350nm to
The direction of 1200nm, AR film layer 1 successively have cut-off wave band, transition wave band, passband wave band.As shown in figure 4, passband wave band
Light penetration is greater than 90%, and the transmitance of transition wave band is 0.1%-90%, ends the transmitance of wave band less than 0.1%.This
Outside, as shown in figure 4, the AR of the invention according to each parameter setting of embodiment 1, when incident angle changes from 0 ° to 30 °, closely
Infrared light transmittance curve is less than 30nm in the steepness of transmitance 10%-90%, i.e. light penetration 10% arrives light penetration
90% waveband width is less than 30nm.
Embodiment 2:
In the present embodiment, along the direction far from glass substrate 2, the structure of AR film layer 1 is (LH) * q, L, q=
12.Meet relational expression between the physical thickness of second refractive index material H and the physical thickness of first refractive index material layer L:
0.05≤DL/DH≤ 20, third reflect rate material layer M physical thickness and the second refractive index material H physical thickness meet relationship
Formula: 0.02≤DM/DH≤50。
That is, in the present embodiment, AR film layer 1 includes 25 layer of material altogether.In the present embodiment, in AR
In film layer 1, Nb is selected2O5As the second refractive index material H, select silica as first refractive index material layer L.It utilizes
Formula OTi=OT (1+Acos (2 × pi × f × i) sin (2 × pi × f × i)) substitutes into equationParameters of film is obtained to be as follows:
Wherein, OTiIndicate the optical thickness of the i-th tunic layer, OT0Ti indicates that the optics of a quarter design wavelength size is thick
Degree, pi indicate that pi, f indicate modulation factor, and size is between 0 to 1.
Table 2 indicates the parameter of each material layer of AR film layer 1:
| 1 | 2 | 3 | 4 | 5 | |
| Material | SiO2 | Nb2O5 | SiO2 | Nb2O5 | SiO2 |
| Thickness (nm) | 177.36 | 29.01 | 86.24 | 34.26 | 137.61 |
| 6 | 7 | 8 | 9 | 10 | |
| Material | Nb2O5 | SiO2 | Nb2O5 | SiO2 | Nb2O5 |
| Thickness (nm) | 42.57 | 105.57 | 32.63 | 124.57 | 39.38 |
| 11 | 12 | 13 | 14 | 15 | |
| Material | SiO2 | Nb2O5 | SiO2 | Nb2O5 | SiO2 |
| Thickness (nm) | 127.56 | 36.38 | 121.12 | 36.38 | 123.16 |
| 16 | 17 | 18 | 19 | 20 | |
| Material | Nb2O5 | SiO2 | Nb2O5 | SiO2 | Nb2O5 |
| Thickness (nm) | 31.7 | 132.74 | 44.2 | 128.03 | 27.69 |
| 21 | 22 | 23 | 24 | 25 | |
| Material | SiO2 | Nb2O5 | SiO2 | Nb2O5 | SiO2 |
| Thickness (nm) | 110.12 | 44.01 | 131.96 | 36.76 | 76.98 |
Table 2
As shown in figure 5, AR film layer 1 of the invention is arranged referring to each conditional parameter in embodiment 2, in 350-1200nm wave
Long range, AR film layer 1 have a passband wave band, a cut-off wave band and a transition wave band, i.e., along from 350nm to
The direction of 1200nm, AR film layer 1 successively have cut-off wave band, transition wave band, passband wave band.As shown in figure 5, passband wave band
Light penetration is greater than 90%, and the transmitance of transition wave band is 0.1%-90%, ends the transmitance of wave band less than 0.1%.This
Outside, as shown in figure 5, the AR of the invention according to each parameter setting of embodiment 2, when incident angle changes from 0 ° to 30 °, closely
Steepness of the infrared light transmittance curve in transmitance 10%-90% is less than 30nm.
Embodiment 3:
In the present embodiment, along the direction far from glass substrate 2, the structure of AR film layer 1 is M, (LH) * k, L, k=
11.Meet relational expression between the physical thickness of second refractive index material H and the physical thickness of first refractive index material layer L:
0.05≤DL/DH≤ 20, between the physical thickness of third reflect rate material layer M and the physical thickness of the second refractive index material H
Meet relational expression: 0.02≤DM/DH≤50。
That is, in the present embodiment, AR film layer 3 includes 24 layer of material altogether.In the present embodiment, AR film
It selects silane as the second refractive index material H in layer 1, selects niobium pentaoxide as third reflect rate material layer M, choosing
Use silica as first refractive index material layer L.Utilize formula OTi=OT (1+Acos (2 × pi × f × i) sin (2 × pi
× f × i)), substitute into equationParameters of film is obtained to be as follows:
Wherein, OTiIndicate the optical thickness of the i-th tunic layer, OT0Ti indicates that the optics of a quarter design wavelength size is thick
Degree, pi indicate that pi, f indicate modulation factor, and size is between 0 to 1.
Table 3 shows the parameter of each material layer of AR film layer 1:
| 1 | 2 | 3 | 4 | 5 | |
| Material | Nb2O5 | SiO2 | Si:H | SiO2 | Si:H |
| Thickness (nm) | 91.91 | 46.65 | 171.57 | 84.57 | 60 |
| 6 | 7 | 8 | 9 | 10 | |
| Material | SiO2 | Si:H | SiO2 | Si:H | SiO2 |
| Thickness (nm) | 41.2 | 71.23 | 77.52 | 56.51 | 82.7 |
| 11 | 12 | 13 | 14 | 15 | |
| Material | Si:H | SiO2 | Si:H | SiO2 | Si:H |
| Thickness (nm) | 22 | 20 | 59.2 | 87.39 | 204.08 |
| 16 | 17 | 18 | 19 | 20 | |
| Material | SiO2 | Si:H | SiO2 | Si:H | SiO2 |
| Thickness (nm) | 72.16 | 22.45 | 20 | 20 | 71.46 |
| 21 | 22 | 23 | 24 | ||
| Material | Si:H | SiO2 | Si:H | SiO2 | |
| Thickness (nm) | 60.69 | 121.32 | 48.2 | 28.68 |
Table 3
As shown in fig. 6, AR film layer 1 of the invention is arranged referring to each conditional parameter in embodiment 3, in 350-1200nm wave
Long range, AR film layer 1 have a passband wave band, a cut-off wave band and a transition wave band, i.e., along from 350nm to
The direction of 1200nm, AR film layer 1 successively have cut-off wave band, transition wave band, passband wave band.As shown in fig. 6, passband wave band
Light penetration is greater than 90%, and the transmitance of transition wave band is 0.1%-90%, ends the transmitance of wave band less than 0.1%.This
Outside, as shown in fig. 6, the AR of the invention according to each parameter setting of embodiment 3, when incident angle changes from 0 ° to 30 °, closely
Steepness of the infrared light transmittance curve in transmitance 10%-90% is less than 30nm.
Embodiment 4:
In the present embodiment, along the direction far from glass substrate 2, the structure of AR film layer 1 is (LH) * n, L, M,
(LH) * p, L meet between the physical thickness of the second refractive index material H and the physical thickness of first refractive index material layer L and close
It is formula: 0.05≤DL/DH≤ 20, the physical thickness of third reflect rate material layer M and the physical thickness of the second refractive index material H
Between meet relational expression: 0.02≤DM/DH≤ 50, n=5, p=6.
That is, in the present embodiment, AR film layer 3 includes 25 layer of material altogether.In the present embodiment, AR film
It selects silane as the second refractive index material H in layer 1, selects aluminum oxide as third reflect rate material layer M, choosing
Use silica as first refractive index material layer L.Utilize formula OTi=OT (1+Acos (2 × pi × f × i) sin (2 × pi
× f × i)), substitute into equationParameters of film is obtained to be as follows:
Wherein, OTiIndicate the optical thickness of the i-th tunic layer, OT0Ti indicates that the optics of a quarter design wavelength size is thick
Degree, pi indicate that pi, f indicate modulation factor, and size is between 0 to 1.
Table 4 shows the parameter of each material layer of AR film layer 1:
Table 4
As shown in fig. 7, AR film layer 1 of the invention is arranged referring to each conditional parameter in embodiment 4, in 350-1200nm wave
Long range, AR film layer 1 have a passband wave band, a cut-off wave band and a transition wave band, i.e., along from 350nm to
The direction of 1200nm, AR film layer 1 successively have cut-off wave band, transition wave band, passband wave band.As shown in fig. 7, passband wave band
Light penetration is greater than 90%, and the transmitance of transition wave band is 0.1%-90%, ends the transmitance of wave band less than 0.1%.This
Outside, as shown in fig. 7, the AR of the invention according to each parameter setting of embodiment 4, when incident angle changes from 0 ° to 30 °, closely
Steepness of the infrared light transmittance curve in transmitance 10%-90% is less than 30nm.
AR film layer 1 of the invention is configured according to above embodiment, and near infrared light high transmittance is being effectively ensured
Simultaneously as being provided with third reflect rate material layer M in AR film layer 1, the AR film layer of middle optical filter, has compared with the prior art
Effect reduces total thicknesses of layers, while can improve the adhesive force of film layer.
The present invention also provides a kind of optical filter comprising above-mentioned AR film layer 1, optical filter includes above-mentioned AR film layer 1 and glass
Substrate 2, AR film layer 1 are coated on the surface of glass substrate 2.
The foregoing is merely a schemes of the invention, are not intended to restrict the invention, for the technology of this field
For personnel, the invention may be variously modified and varied.All within the spirits and principles of the present invention, made any to repair
Change, equivalent replacement, improvement etc., should all be included in the protection scope of the present invention.
Claims (11)
1. a kind of AR film layer for near-infrared narrow band filter, the AR film layer (1) are coated with the glass substrate of the optical filter
(2) on, which is characterized in that the AR film layer (1) include first refractive index material layer and the second refractive index material or including
First refractive index material layer, the second refractive index material and third reflect rate material layer；
The refractive index of the third reflect rate material layer is greater than the first refractive index material layer refractive index, second refractive index
The refractive index of material layer is greater than the refractive index of the third reflect rate material layer.
2. AR film layer according to claim 1, which is characterized in that along the direction far from the glass substrate (2), the AR
The outermost layer of film layer (1) is first refractive index material layer.
3. AR film layer according to claim 2, which is characterized in that described along the direction far from the glass substrate (2)
The structure of AR film layer (1) is followed successively by (LH) * q, L, wherein L indicates that first refractive index material layer, H indicate the second refraction materials
Layer, (LH) * q indicate that first refractive index material layer and the second refractive index material are arranged alternately q times, and q is whole more than or equal to 1
Number.
4. AR film layer according to claim 2, which is characterized in that described along the direction far from the glass substrate (2)
The structure of AR film layer (1) is followed successively by M, (LH) * k, L, and wherein M indicates that third reflect rate material layer, L indicate first refractive index material
Layer, H indicate that the second refractive index material, (LH) * k indicate that first refractive index material layer and the second refractive index material are arranged alternately
K times, k is the integer more than or equal to 1.
5. AR film layer according to claim 2, which is characterized in that described along the direction far from the glass substrate (2)
The structure of AR film layer (1) is followed successively by (LH) * n, L, M, (LH) * p, L, wherein L indicates that first refractive index material layer, H indicate second
Refractive index material, (LH) * n indicate that first refractive index material layer and the second refractive index material are arranged alternately n times, n be greater than
Integer equal to 0, (LH) * p indicate that first refractive index material layer and the second refractive index material are arranged alternately p time, p for greater than etc.
In 1 integer.
6. according to the described in any item AR film layers of claim 3-5, which is characterized in that the second refractive index material physics is thick
Degree meets relational expression: 0.05≤D with the first refractive index material layer physical thicknessL/DH≤ 20, the third reflect rate material
Layer physical thickness and the second refractive index material physical thickness meet relational expression: 0.02≤DM/DH≤50。
7. AR film layer according to claim 1, which is characterized in that second refractive index material is layer of hydrogenated,
Refractive index in 800-1200nm wave-length coverage is greater than 3, and extinction coefficient is less than 0.002；
Second refractive index material refractive index at 850nm is greater than 3.6, and refractive index is greater than 3.55 at 940nm.
8. AR film layer according to claim 7, which is characterized in that the layer of hydrogenated is that sputtering reaction is coated with material layer,
Sputter temperature range is 80-300 degrees Celsius, hydrogen flowing quantity 10-50sccm, sputter rate 0.1nm/s-1nm/s.
9. AR film layer according to claim 1, which is characterized in that in 800-1200nm wave-length coverage, the third folding
The refractive index of rate material layer is penetrated less than 4, the refractive index of the first refractive index material layer is less than 3.
10. AR film layer according to claim 1, which is characterized in that the AR film layer (1) is in 350-1200nm wave-length coverage
Inside there is a passband wave band, a cut-off wave band and a transition wave band, it is described along the direction from 350nm to 1200nm
End wave band, the transition wave band and passband subband order arrangement；
The transmitance of the passband wave band is greater than 90%；
The transmitance of the transition wave band is 0.1%-90%；
The transmitance of the cut-off wave band is less than 0.1%.
11. a kind of optical filter comprising the described in any item AR film layers of claim 1-10, which is characterized in that including glass substrate
(2) and the AR film layer (1) that is coated on the glass substrate (2).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810884742.3A CN109061785A (en) | 2018-08-06 | 2018-08-06 | AR film layer and optical filter for near-infrared narrow band filter |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810884742.3A CN109061785A (en) | 2018-08-06 | 2018-08-06 | AR film layer and optical filter for near-infrared narrow band filter |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN109061785A true CN109061785A (en) | 2018-12-21 |
Family
ID=64833228
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810884742.3A Pending CN109061785A (en) | 2018-08-06 | 2018-08-06 | AR film layer and optical filter for near-infrared narrow band filter |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN109061785A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112147733A (en) * | 2019-06-27 | 2020-12-29 | 奥托仑达株式会社 | Optical filter |
| CN112285817A (en) * | 2015-02-18 | 2021-01-29 | 美题隆公司 | Near infrared optical interference filter with improved transmission |
| CN113075758A (en) * | 2021-04-19 | 2021-07-06 | 广州市佳禾光电科技有限公司 | Infrared band-pass filter and sensor system |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63113501A (en) * | 1986-10-31 | 1988-05-18 | Canon Inc | Reflection preventing film |
| CN202453522U (en) * | 2011-12-22 | 2012-09-26 | 凤凰光学(上海)有限公司 | Novel antireflection film system structure |
| WO2018043500A1 (en) * | 2016-08-31 | 2018-03-08 | 株式会社大真空 | Optical filter |
| CN208421290U (en) * | 2018-08-06 | 2019-01-22 | 信阳舜宇光学有限公司 | AR film layer and optical filter for near-infrared narrow band filter |
-
2018
- 2018-08-06 CN CN201810884742.3A patent/CN109061785A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63113501A (en) * | 1986-10-31 | 1988-05-18 | Canon Inc | Reflection preventing film |
| CN202453522U (en) * | 2011-12-22 | 2012-09-26 | 凤凰光学(上海)有限公司 | Novel antireflection film system structure |
| WO2018043500A1 (en) * | 2016-08-31 | 2018-03-08 | 株式会社大真空 | Optical filter |
| CN208421290U (en) * | 2018-08-06 | 2019-01-22 | 信阳舜宇光学有限公司 | AR film layer and optical filter for near-infrared narrow band filter |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112285817A (en) * | 2015-02-18 | 2021-01-29 | 美题隆公司 | Near infrared optical interference filter with improved transmission |
| CN112147733A (en) * | 2019-06-27 | 2020-12-29 | 奥托仑达株式会社 | Optical filter |
| US11402559B2 (en) | 2019-06-27 | 2022-08-02 | Optrontec Co., Ltd. | Optical filter with layers having refractive index greater than 3 |
| CN113075758A (en) * | 2021-04-19 | 2021-07-06 | 广州市佳禾光电科技有限公司 | Infrared band-pass filter and sensor system |
| CN113075758B (en) * | 2021-04-19 | 2022-09-23 | 广州市佳禾光电科技有限公司 | Infrared band-pass filter and sensor system |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN108897085A (en) | Optical filter and infrared image sensing system comprising the optical filter | |
| CN108873135A (en) | A kind of near-infrared narrow band filter and infrared imaging system | |
| CN108761614A (en) | Optical filter and infrared image sensing system comprising the optical filter | |
| CN109061785A (en) | AR film layer and optical filter for near-infrared narrow band filter | |
| CN208596240U (en) | A kind of near-infrared narrow band filter and infrared imaging system | |
| Lee et al. | Omnidirectional Flexible Transmissive Structural Colors with High‐Color‐Purity and High‐Efficiency Exploiting Multicavity Resonances | |
| JP5881096B2 (en) | Antireflection film and optical element | |
| CN102909918B (en) | Two-side coated glass and preparation method thereof | |
| CN101393276B (en) | Wide-band antireflective film and optical element with the wide-band antireflective film | |
| JP7299346B2 (en) | Near-infrared bandpass optical filter and optical sensing system | |
| CN208421290U (en) | AR film layer and optical filter for near-infrared narrow band filter | |
| CN101750641A (en) | Broadband AR (anti-reflection)-film and optical element with broadband AR-film | |
| CN109298477A (en) | Optical filter | |
| CN104730794A (en) | Multilayer film structure electrochromic displayer | |
| CN101681069B (en) | Transparent electrode | |
| CN208421291U (en) | Optical filter and infrared image sensing system comprising the optical filter | |
| CN108803183B (en) | Double-layer all-inorganic electrochromic device and preparation method thereof | |
| CN204028389U (en) | A kind of automatically cleaning ultra-wideband antireflective film glass | |
| CN111290066B (en) | Infrared band cut-off filter and application thereof | |
| CN208421292U (en) | Optical filter and infrared image sensing system comprising the optical filter | |
| CN104834424A (en) | Shadow-eliminating permeability-increasing transparent conductive thin film | |
| CN105398120A (en) | Disapparate permeability-improvement film, conductive film, conductive glass and touch screen | |
| WO2020103206A1 (en) | Polarization-independent filter | |
| CN103885108A (en) | Attenuation band-pass filter and manufacturing method of attenuation band-pass filter | |
| KR102130995B1 (en) | Strength improving method of glass substrate for optical filter and optical filter thereby |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |