CN108831968A - 一种n型硅基太阳能电池及其制备方法 - Google Patents

一种n型硅基太阳能电池及其制备方法 Download PDF

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CN108831968A
CN108831968A CN201810663481.2A CN201810663481A CN108831968A CN 108831968 A CN108831968 A CN 108831968A CN 201810663481 A CN201810663481 A CN 201810663481A CN 108831968 A CN108831968 A CN 108831968A
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张军
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Anhui Eagle Dragon Industrial Design Co., Ltd.
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Abstract

本发明涉及一种N型硅基太阳能电池及其制备方法，包括以下步骤：对N型单晶硅片进行双面制绒处理；在所述N型单晶硅片上表面的局部区域上形成多个呈矩阵排布的N型磷重掺杂区；接着在所述N型单晶硅片的上表面依次沉积第一本征非晶硅层和P型非晶硅层；接着在所述N型单晶硅片的下表面依次沉积第二本征非晶硅层和N型非晶硅层；接着在所述N型单晶硅片的上表面沉积透明导电层；接着在所述N型单晶硅片的下表面沉积ITO层；最后形成银栅电极和铝背电极。本发明的N型硅基的HIT太阳能电池稳定性好且光电转换效率高。

Description

一种N型硅基太阳能电池及其制备方法
技术领域
本发明涉及太阳能电池制备技术领域，特别是涉及一种N型硅基太阳能电池及其制备方法。
背景技术
太阳能电池，是基于光生伏特效应的一种光电转换器件，日前光伏市场上的太阳能电池主要有晶体硅(包括单晶硅、多晶硅)、HIT(Heterojunction with Intrinsic Thin-layer)结构硅太阳能电池、非晶硅薄膜、碲化镉(CdTe)薄膜及铜铟硒(CIS)薄膜太阳电池等。其中，采用HIT结构的硅太阳能电池，所谓HIT结构就是在晶体硅片上沉积一层非故意掺杂氢化非晶硅薄膜和一层与晶体硅掺杂种类相反的掺杂氢化非晶硅薄膜，采取该工艺措施后，改善了PN结的性能，因而使转换效率达到23％，开路电压达到729mV。如何改善HIT硅太阳能电池的结构，以进一步提高HIT硅太阳能电池的光电转换效率，这是业界广泛关注的热点问题。
发明内容
本发明的目的是克服上述现有技术的不足，提供一种N型硅基太阳能电池及其制备方法。
为实现上述目的，本发明采用的技术方案是：
一种N型硅基太阳能电池的制备方法，包括以下步骤：
1)提供一N型单晶硅片，对所述N型单晶硅片进行双面制绒处理，在所述N型单晶硅片的上下表面均形成一绒面层；
2)在所述N型单晶硅片上表面选择性扩散磷，以在所述N型单晶硅片上表面的局部区域上形成多个呈矩阵排布的N型磷重掺杂区；
3)在所述步骤2得到的所述N型单晶硅片的上表面依次沉积第一本征非晶硅层和P型非晶硅层，其中，所述P型非晶硅层的掺杂浓度小于所述N型单晶硅片的掺杂浓度；
4)在所述步骤3得到的所述N型单晶硅片的下表面依次沉积第二本征非晶硅层和N型非晶硅层，其中，所述N型非晶硅层的掺杂浓度大于所述N型单晶硅片的掺杂浓度；
5)在所述步骤4得到的所述N型单晶硅片的上表面依次沉积第一ITO层、金属层、第二ITO层、石墨烯层以及第三ITO层；
6)在所述步骤5得到的所述N型单晶硅片的下表面沉积第四ITO层；
7)在所述第三ITO层上沉积银栅电极；
8)在所述第四ITO层上沉积铝背电极。
上述技术方案中，进一步的，在所述步骤(2)中，多个所述N型磷重掺杂区的总面积与所述N型单晶硅片的面积的比值为0.3-0.6，所述N型磷重掺杂区的掺杂浓度为1017cm-3-1019cm-3，所述N型单晶硅片的掺杂浓度为1016cm-3-1018cm-3。
上述技术方案中，进一步的，在所述步骤(3)中，所述第一本征非晶硅层的厚度为2-5纳米，所述P型非晶硅层的厚度为3-6纳米，所述P型非晶硅层的掺杂浓度为1015cm-3-1017cm-3。
上述技术方案中，进一步的，在所述步骤(4)中，所述第二本征非晶硅层的厚度为2-4纳米，所述N型非晶硅层的厚度为3-5纳米，所述P型非晶硅层的掺杂浓度为5×1016cm-3-6×1018cm-3。
上述技术方案中，进一步的，在所述步骤(5)中，所述第一ITO层、所述第二ITO层以及所述第三ITO层是通过磁控溅射形成的，所述第一ITO层、所述第二ITO层以及所述第三ITO层的厚度为10-20纳米，所述金属层的材质为银或铜，所述金属层的厚度为1-3纳米，所述金属层是通过磁控溅射形成的，所述石墨烯层是通过CVD法制备并转移至第二ITO层上，所述石墨烯层的厚度为2-4纳米。
上述技术方案中，进一步的，在所述步骤(6)中，所述第四ITO层是通过磁控溅射形成的，所述第四ITO层的厚度为50-80纳米。
上述技术方案中，进一步的，在所述步骤(7)中，所述银栅电极是通过热蒸镀法形成的，所述银栅电极的厚度为100-200纳米。
上述技术方案中，进一步的，在所述步骤(8)中，所述铝背电极是通过热蒸镀法形成的，所述铝背电极的厚度为150-300纳米。
本发明还提出一种N型硅基太阳能电池，其采用上述方法制备形成的。
本发明与现有技术相比具有下列优点：
本发明的N型硅基HIT太阳能电池中，在N型单晶硅片的上表面依次沉积非晶硅层之前，先在所述N型单晶硅片上表面的局部区域上形成多个呈矩阵排布的N型磷重掺杂区，使得P型非晶硅层的掺杂浓度小于所述N型单晶硅片的掺杂浓度，且使得N型非晶硅层的掺杂浓度大于N型单晶硅片的掺杂浓度，以改善其PN结接触性能，便于电子空穴对的分离与传输。进一步优化N型磷重掺杂区的总面积与所述N型单晶硅片的面积的比值，同时通过优化N型单晶硅片、N型磷重掺杂区、P型非晶硅层以及N型非晶硅层各自的掺杂浓度，使得本发明的HIT太阳能电池稳定性好且光电转换效率高。本发明的N型硅基HIT太阳能电池的上表面的透明导电层包括依次沉积第一ITO层、金属层、第二ITO层、石墨烯层以及第三ITO层，通过优化该透明导电层的结构以及各层的厚度，使得该透明导电层的光透过率高且导电率高，进而提高N型硅基HIT太阳能电池对太阳能的利用率，且便于空穴的有效传输，进一步提高其光电转换效率。
附图说明
图1为本发明的N型硅基太阳能电池的结构示意图。
具体实施方式
本发明提出一种N型硅基太阳能电池的制备方法，包括以下步骤：
1)提供一N型单晶硅片，对所述N型单晶硅片进行双面制绒处理，在所述N型单晶硅片的上下表面均形成一绒面层；
2)在所述N型单晶硅片上表面选择性扩散磷，以在所述N型单晶硅片上表面的局部区域上形成多个呈矩阵排布的N型磷重掺杂区，进一步的，多个所述N型磷重掺杂区的总面积与所述N型单晶硅片的面积的比值为0.3-0.6，所述N型磷重掺杂区的掺杂浓度为1017cm-3-1019cm-3，所述N型单晶硅片的掺杂浓度为1016cm-3-1018cm-3；
3)在所述步骤2得到的所述N型单晶硅片的上表面依次沉积第一本征非晶硅层和P型非晶硅层，其中，所述P型非晶硅层的掺杂浓度小于所述N型单晶硅片的掺杂浓度，进一步的，所述第一本征非晶硅层的厚度为2-5纳米，所述P型非晶硅层的厚度为3-6纳米，所述P型非晶硅层的掺杂浓度为1015cm-3-1017cm-3；
4)在所述步骤3得到的所述N型单晶硅片的下表面依次沉积第二本征非晶硅层和N型非晶硅层，其中，所述N型非晶硅层的掺杂浓度大于所述N型单晶硅片的掺杂浓度，进一步的，所述第二本征非晶硅层的厚度为2-4纳米，所述N型非晶硅层的厚度为3-5纳米，所述P型非晶硅层的掺杂浓度为5×1016cm-3-6×1018cm-3；
5)在所述步骤4得到的所述N型单晶硅片的上表面依次沉积第一ITO层、金属层、第二ITO层、石墨烯层以及第三ITO层，进一步的，所述第一ITO层、所述第二ITO层以及所述第三ITO层是通过磁控溅射形成的，所述第一ITO层、所述第二ITO层以及所述第三ITO层的厚度为10-20纳米，所述金属层的材质为银或铜，所述金属层的厚度为1-3纳米，所述金属层是通过磁控溅射形成的，所述石墨烯层是通过CVD法制备并转移至第二ITO层上，所述石墨烯层的厚度为2-4纳米；
6)在所述步骤5得到的所述N型单晶硅片的下表面沉积第四ITO层，进一步的，所述第四ITO层是通过磁控溅射形成的，所述第四ITO层的厚度为50-80纳米；
7)在所述第三ITO层上沉积银栅电极，进一步的，所述银栅电极是通过热蒸镀法形成的，所述银栅电极的厚度为100-200纳米；
8)在所述第四ITO层上沉积铝背电极，进一步的，所述铝背电极是通过热蒸镀法形成的，所述铝背电极的厚度为150-300纳米。
如图1所示，本发明提出一种N型硅基太阳能电池，所述N型硅基太阳能电池从上至下包括银栅电极1、第三ITO层21、石墨烯层22、第二ITO层23、金属层24、第一ITO层25、P型非晶硅层31、第一本征非晶硅层32、N型单晶硅片4、第二本征非晶硅层51、N型非晶硅层52、第四ITO层6以及铝背电极7，其中，所述N型单晶硅片4的上表面的局部区域上形成多个呈矩阵排布的N型磷重掺杂区41。
实施例1：
一种N型硅基太阳能电池的制备方法，包括以下步骤：
1)提供一N型单晶硅片，对所述N型单晶硅片进行双面制绒处理，在所述N型单晶硅片的上下表面均形成一绒面层；
2)在所述N型单晶硅片上表面选择性扩散磷，以在所述N型单晶硅片上表面的局部区域上形成多个呈矩阵排布的N型磷重掺杂区，进一步的，多个所述N型磷重掺杂区的总面积与所述N型单晶硅片的面积的比值为0.5，所述N型磷重掺杂区的掺杂浓度为5×1018cm-3，所述N型单晶硅片的掺杂浓度为5×1017cm-3；
3)在所述步骤2得到的所述N型单晶硅片的上表面依次沉积第一本征非晶硅层和P型非晶硅层，其中，所述P型非晶硅层的掺杂浓度小于所述N型单晶硅片的掺杂浓度，进一步的，所述第一本征非晶硅层的厚度为4纳米，所述P型非晶硅层的厚度为4纳米，所述P型非晶硅层的掺杂浓度为1016cm-3；
4)在所述步骤3得到的所述N型单晶硅片的下表面依次沉积第二本征非晶硅层和N型非晶硅层，其中，所述N型非晶硅层的掺杂浓度大于所述N型单晶硅片的掺杂浓度，进一步的，所述第二本征非晶硅层的厚度为3纳米，所述N型非晶硅层的厚度为4纳米，所述P型非晶硅层的掺杂浓度为1018cm-3；
5)在所述步骤4得到的所述N型单晶硅片的上表面依次沉积第一ITO层、金属层、第二ITO层、石墨烯层以及第三ITO层，进一步的，所述第一ITO层、所述第二ITO层以及所述第三ITO层是通过磁控溅射形成的，所述第一ITO层、所述第二ITO层以及所述第三ITO层的厚度均为15纳米，所述金属层的材质为银，所述金属层的厚度为2纳米，所述金属层是通过磁控溅射形成的，所述石墨烯层是通过CVD法制备并转移至第二ITO层上，所述石墨烯层的厚度为3纳米；
6)在所述步骤5得到的所述N型单晶硅片的下表面沉积第四ITO层，进一步的，所述第四ITO层是通过磁控溅射形成的，所述第四ITO层的厚度为60纳米；
7)在所述第三ITO层上沉积银栅电极，进一步的，所述银栅电极是通过热蒸镀法形成的，所述银栅电极的厚度为150纳米；
8)在所述第四ITO层上沉积铝背电极，进一步的，所述铝背电极是通过热蒸镀法形成的，所述铝背电极的厚度为200纳米。
上述方法制备的N型硅基太阳能电池的开路电压为0.74V，短路电流为38.9mA/cm2，填充因子为0.84，光电转换效率为24.2％。
实施例2
一种N型硅基太阳能电池的制备方法，包括以下步骤：
1)提供一N型单晶硅片，对所述N型单晶硅片进行双面制绒处理，在所述N型单晶硅片的上下表面均形成一绒面层；
2)在所述N型单晶硅片上表面选择性扩散磷，以在所述N型单晶硅片上表面的局部区域上形成多个呈矩阵排布的N型磷重掺杂区，进一步的，多个所述N型磷重掺杂区的总面积与所述N型单晶硅片的面积的比值为0.3，所述N型磷重掺杂区的掺杂浓度为1017cm-3，所述N型单晶硅片的掺杂浓度为1016cm-3；
3)在所述步骤2得到的所述N型单晶硅片的上表面依次沉积第一本征非晶硅层和P型非晶硅层，其中，所述P型非晶硅层的掺杂浓度小于所述N型单晶硅片的掺杂浓度，进一步的，所述第一本征非晶硅层的厚度为2纳米，所述P型非晶硅层的厚度为3纳米，所述P型非晶硅层的掺杂浓度为1015cm-3；
4)在所述步骤3得到的所述N型单晶硅片的下表面依次沉积第二本征非晶硅层和N型非晶硅层，其中，所述N型非晶硅层的掺杂浓度大于所述N型单晶硅片的掺杂浓度，进一步的，所述第二本征非晶硅层的厚度为2纳米，所述N型非晶硅层的厚度为3纳米，所述P型非晶硅层的掺杂浓度为5×1016cm-3；
5)在所述步骤4得到的所述N型单晶硅片的上表面依次沉积第一ITO层、金属层、第二ITO层、石墨烯层以及第三ITO层，进一步的，所述第一ITO层、所述第二ITO层以及所述第三ITO层是通过磁控溅射形成的，所述第一ITO层、所述第二ITO层以及所述第三ITO层的厚度为10纳米，所述金属层的材质为铜，所述金属层的厚度为1纳米，所述金属层是通过磁控溅射形成的，所述石墨烯层是通过CVD法制备并转移至第二ITO层上，所述石墨烯层的厚度为2纳米；
6)在所述步骤5得到的所述N型单晶硅片的下表面沉积第四ITO层，进一步的，所述第四ITO层是通过磁控溅射形成的，所述第四ITO层的厚度为50纳米；
7)在所述第三ITO层上沉积银栅电极，进一步的，所述银栅电极是通过热蒸镀法形成的，所述银栅电极的厚度为100纳米；
8)在所述第四ITO层上沉积铝背电极，进一步的，所述铝背电极是通过热蒸镀法形成的，所述铝背电极的厚度为150纳米。
上述方法制备的N型硅基太阳能电池的开路电压为0.74V，短路电流为38.6mA/cm2，填充因子为0.83，光电转换效率为23.7％。
实施例3
一种N型硅基太阳能电池的制备方法，包括以下步骤：
1)提供一N型单晶硅片，对所述N型单晶硅片进行双面制绒处理，在所述N型单晶硅片的上下表面均形成一绒面层；
2)在所述N型单晶硅片上表面选择性扩散磷，以在所述N型单晶硅片上表面的局部区域上形成多个呈矩阵排布的N型磷重掺杂区，进一步的，多个所述N型磷重掺杂区的总面积与所述N型单晶硅片的面积的比值为0.6，所述N型磷重掺杂区的掺杂浓度为1019cm-3，所述N型单晶硅片的掺杂浓度为1018cm-3；
3)在所述步骤2得到的所述N型单晶硅片的上表面依次沉积第一本征非晶硅层和P型非晶硅层，其中，所述P型非晶硅层的掺杂浓度小于所述N型单晶硅片的掺杂浓度，进一步的，所述第一本征非晶硅层的厚度为5纳米，所述P型非晶硅层的厚度为6纳米，所述P型非晶硅层的掺杂浓度为1017cm-3；
4)在所述步骤3得到的所述N型单晶硅片的下表面依次沉积第二本征非晶硅层和N型非晶硅层，其中，所述N型非晶硅层的掺杂浓度大于所述N型单晶硅片的掺杂浓度，进一步的，所述第二本征非晶硅层的厚度为4纳米，所述N型非晶硅层的厚度为5纳米，所述P型非晶硅层的掺杂浓度为6×1018cm-3；
5)在所述步骤4得到的所述N型单晶硅片的上表面依次沉积第一ITO层、金属层、第二ITO层、石墨烯层以及第三ITO层，进一步的，所述第一ITO层、所述第二ITO层以及所述第三ITO层是通过磁控溅射形成的，所述第一ITO层、所述第二ITO层以及所述第三ITO层的厚度为20纳米，所述金属层的材质为银，所述金属层的厚度为3纳米，所述金属层是通过磁控溅射形成的，所述石墨烯层是通过CVD法制备并转移至第二ITO层上，所述石墨烯层的厚度为4纳米；
6)在所述步骤5得到的所述N型单晶硅片的下表面沉积第四ITO层，进一步的，所述第四ITO层是通过磁控溅射形成的，所述第四ITO层的厚度为80纳米；
7)在所述第三ITO层上沉积银栅电极，进一步的，所述银栅电极是通过热蒸镀法形成的，所述银栅电极的厚度为200纳米；
8)在所述第四ITO层上沉积铝背电极，进一步的，所述铝背电极是通过热蒸镀法形成的，所述铝背电极的厚度为300纳米。
上述方法制备的N型硅基太阳能电池的开路电压为0.73V，短路电流为38.8mA/cm2，填充因子为0.83，光电转换效率为23.5％。
以上所述是本发明的优选实施方式，应当指出，对于本技术领域的普通技术人员来说，在不脱离本发明原理的前提下，还可以做出若干改进和润饰，这些改进和润饰也视为本发明的保护范围。

Claims (9)

1.一种N型硅基太阳能电池的制备方法，其特征在于：包括以下步骤：
1)提供一N型单晶硅片，对所述N型单晶硅片进行双面制绒处理，在所述N型单晶硅片的上下表面均形成一绒面层；
2)在所述N型单晶硅片上表面选择性扩散磷，以在所述N型单晶硅片上表面的局部区域上形成多个呈矩阵排布的N型磷重掺杂区；
3)在所述步骤2得到的所述N型单晶硅片的上表面依次沉积第一本征非晶硅层和P型非晶硅层，其中，所述P型非晶硅层的掺杂浓度小于所述N型单晶硅片的掺杂浓度；
4)在所述步骤3得到的所述N型单晶硅片的下表面依次沉积第二本征非晶硅层和N型非晶硅层，其中，所述N型非晶硅层的掺杂浓度大于所述N型单晶硅片的掺杂浓度；
5)在所述步骤4得到的所述N型单晶硅片的上表面依次沉积第一ITO层、金属层、第二ITO层、石墨烯层以及第三ITO层；
6)在所述步骤5得到的所述N型单晶硅片的下表面沉积第四ITO层；
7)在所述第三ITO层上沉积银栅电极；
8)在所述第四ITO层上沉积铝背电极。
2.根据权利要求1所述的N型硅基太阳能电池的制备方法，其特征在于：在所述步骤(2)中，多个所述N型磷重掺杂区的总面积与所述N型单晶硅片的面积的比值为0.3-0.6，所述N型磷重掺杂区的掺杂浓度为1017cm-3-1019cm-3，所述N型单晶硅片的掺杂浓度为1016cm-3-1018cm-3。
3.根据权利要求1所述的N型硅基太阳能电池的制备方法，其特征在于：在所述步骤(3)中，所述第一本征非晶硅层的厚度为2-5纳米，所述P型非晶硅层的厚度为3-6纳米，所述P型非晶硅层的掺杂浓度为1015cm-3-1017cm-3。
4.根据权利要求1所述的N型硅基太阳能电池的制备方法，其特征在于：在所述步骤(4)中，所述第二本征非晶硅层的厚度为2-4纳米，所述N型非晶硅层的厚度为3-5纳米，所述P型非晶硅层的掺杂浓度为5×1016cm-3-6×1018cm-3。
5.根据权利要求1所述的N型硅基太阳能电池的制备方法，其特征在于：在所述步骤(5)中，所述第一ITO层、所述第二ITO层以及所述第三ITO层是通过磁控溅射形成的，所述第一ITO层、所述第二ITO层以及所述第三ITO层的厚度为10-20纳米，所述金属层的材质为银或铜，所述金属层的厚度为1-3纳米，所述金属层是通过磁控溅射形成的，所述石墨烯层是通过CVD法制备并转移至第二ITO层上，所述石墨烯层的厚度为2-4纳米。
6.根据权利要求1所述的N型硅基太阳能电池的制备方法，其特征在于：在所述步骤(6)中，所述第四ITO层是通过磁控溅射形成的，所述第四ITO层的厚度为50-80纳米。
7.根据权利要求1所述的N型硅基太阳能电池的制备方法，其特征在于：在所述步骤(7)中，所述银栅电极是通过热蒸镀法形成的，所述银栅电极的厚度为100-200纳米。
8.根据权利要求1所述的N型硅基太阳能电池的制备方法，其特征在于：在所述步骤(8)中，所述铝背电极是通过热蒸镀法形成的，所述铝背电极的厚度为150-300纳米。
9.一种N型硅基太阳能电池，其特征在于，采用权利要求1-8任一项所述的方法制备形成的。
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