CN108831825A - The preparation method and CIGS thin film solar components of CIGS thin film - Google Patents
The preparation method and CIGS thin film solar components of CIGS thin film Download PDFInfo
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- CN108831825A CN108831825A CN201810652703.0A CN201810652703A CN108831825A CN 108831825 A CN108831825 A CN 108831825A CN 201810652703 A CN201810652703 A CN 201810652703A CN 108831825 A CN108831825 A CN 108831825A
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- 239000010409 thin film Substances 0.000 title claims abstract description 95
- 238000002360 preparation method Methods 0.000 title claims abstract description 38
- 239000010408 film Substances 0.000 claims abstract description 99
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims abstract description 83
- 229910052750 molybdenum Inorganic materials 0.000 claims abstract description 83
- 239000011733 molybdenum Substances 0.000 claims abstract description 83
- 238000000034 method Methods 0.000 claims abstract description 21
- 239000000758 substrate Substances 0.000 claims abstract description 18
- 238000000151 deposition Methods 0.000 claims description 17
- 238000005530 etching Methods 0.000 claims description 11
- 239000011521 glass Substances 0.000 claims description 7
- 229910001220 stainless steel Inorganic materials 0.000 claims description 6
- 239000010935 stainless steel Substances 0.000 claims description 6
- 238000001020 plasma etching Methods 0.000 claims description 5
- 238000006748 scratching Methods 0.000 claims description 5
- 230000002393 scratching effect Effects 0.000 claims description 5
- 229920003223 poly(pyromellitimide-1,4-diphenyl ether) Polymers 0.000 claims description 4
- 238000001755 magnetron sputter deposition Methods 0.000 claims 1
- 239000000853 adhesive Substances 0.000 abstract description 13
- 230000001070 adhesive effect Effects 0.000 abstract description 13
- 238000004519 manufacturing process Methods 0.000 abstract description 10
- 238000012545 processing Methods 0.000 abstract description 6
- KTSFMFGEAAANTF-UHFFFAOYSA-N [Cu].[Se].[Se].[In] Chemical compound [Cu].[Se].[Se].[In] KTSFMFGEAAANTF-UHFFFAOYSA-N 0.000 description 75
- 239000010949 copper Substances 0.000 description 6
- 238000004544 sputter deposition Methods 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 5
- 230000000694 effects Effects 0.000 description 5
- 239000011669 selenium Substances 0.000 description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 230000008021 deposition Effects 0.000 description 4
- 229910052738 indium Inorganic materials 0.000 description 4
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 3
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 3
- 230000007812 deficiency Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 229910052733 gallium Inorganic materials 0.000 description 3
- 238000010438 heat treatment Methods 0.000 description 3
- 229910052711 selenium Inorganic materials 0.000 description 3
- 239000004642 Polyimide Substances 0.000 description 2
- VYRNMWDESIRGOS-UHFFFAOYSA-N [Mo].[Au] Chemical compound [Mo].[Au] VYRNMWDESIRGOS-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000005457 optimization Methods 0.000 description 2
- 229920001721 polyimide Polymers 0.000 description 2
- 230000002411 adverse Effects 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- QNWMNMIVDYETIG-UHFFFAOYSA-N gallium(ii) selenide Chemical compound [Se]=[Ga] QNWMNMIVDYETIG-UHFFFAOYSA-N 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000004886 process control Methods 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000002910 structure generation Methods 0.000 description 1
- 238000012876 topography Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02491—Conductive materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02568—Chalcogenide semiconducting materials not being oxides, e.g. ternary compounds
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
- H01L31/0322—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 comprising only AIBIIICVI chalcopyrite compounds, e.g. Cu In Se2, Cu Ga Se2, Cu In Ga Se2
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/541—CuInSe2 material PV cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Manufacturing & Machinery (AREA)
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- Inorganic Chemistry (AREA)
- Photovoltaic Devices (AREA)
- Physical Vapour Deposition (AREA)
Abstract
The invention belongs to technical field of solar batteries, disclose the preparation method and CIGS thin film solar components of a kind of CIGS thin film.The preparation method of CIGS thin film provided by the invention comprises the following steps：There is the molybdenum film of the surface texture of recess and/or protrusion in substrate surface preparation；CIGS thin film is prepared on the surface of molybdenum film.In the preparation method of CIGS thin film provided by the present invention, introduce the working process to molybdenum film surface appearance, recess and/or bulge-structure are formed on the surface of molybdenum film, so that the way of contact between the CIGS thin film further prepared and molybdenum film is transformed into the way of contact of locally embedding formula by traditional planar fashion, CIGS thin film is effectively increased in the adhesive force of molybdenum film surface, the CIGS thin film solar components further prepared with this kind of CIGS thin film are adapted for the complicated processings processes such as special-shaped component production.
Description
Technical field
The invention belongs to technical field of solar batteries, in particular to the preparation method and CIGS thin film of a kind of CIGS thin film
Solar components.
Background technique
CIGS thin film solar battery is solar film battery Cu (InxGa1-x)Se2Write a Chinese character in simplified form, main composition has Cu
(copper), In (indium), Ga (gallium), Se (selenium) have strong light absorpting ability, generating dutation length on daytime, generated energy height, production cost low
And the energy recovery period it is short the advantages that.
Co-evaporated Deposition method is to prepare copper and indium in the production of current copper indium gallium selenide (CIGS) thin film solar component and research
One of the main stream approach of gallium selenium absorbed layer.The specific embodiment of Co-evaporated Deposition method preparation CIGS thin film：In high vacuum ring
Under border, four kinds of material melted by heat of copper, indium, gallium, selenium in crucible are made in the way of Resistant heating, and at an angle
It is evaporated with distance, carries out deposition growing in the substrate surface of heating, form CIGS thin film.Co-evaporated Deposition method has heavy
The advantages that product is high-efficient, process control is good, reproducible, is widely applied.
Consider the influence factors such as lattice constant, thermal expansion coefficient and conductivity, CIGS film layer is mainly in molybdenum gold at present
Belong to film surface and carry out deposition growing, i.e., is utilized first on substrate (glass, stainless steel film, Kapton etc.) surface
The method of vacuum magnetic-control sputtering deposition plating prepares one layer of molybdenum film, then recycles Co-evaporated Deposition method heavy in Mo layer surface
Product CIGS film layer.
However, that there are still stability is poor, is unsuitable for carrying out the complexity such as specificity modules for current CIGS thin film solar components
The deficiency of manufacturing procedure.
Summary of the invention
The purpose of the present invention is to provide a kind of preparation method of the CIGS thin film in solar components and include this kind
The solar components of CIGS thin film, to enhance in solar components adhesive force between CIGS thin film and molybdenum film, improve
The processing performance and service performance of CIGS thin film solar components.
In order to solve the above technical problems, embodiments of the present invention provide a kind of preparation method of CIGS thin film, the party
Method comprises the following steps：S1, the molybdenum film in substrate surface preparation with the surface texture of recess and/or protrusion；S2,
The surface of the molybdenum film prepares CIGS thin film.
Embodiments of the present invention additionally provide a kind of CIGS thin film solar components, successively thin comprising substrate, molybdenum
Film and CIGS thin film, wherein molybdenum film has the surface texture of recess and/or protrusion.
In terms of existing technologies, it in the preparation method of CIGS thin film provided by embodiments of the present invention, introduces
To the working process of molybdenum film surface appearance, the configuration of surface of molybdenum film layer is changed, in molybdenum film
Surface forms recess and/or bulge-structure.It has been found that the adhesive force in CIGS thin film solar components, between film layer
And deficiency (the especially adhesive force between CIGS thin film absorbed layer and molybdenum film back electrode layer and the attachment of attachment stability
The deficiency of stability), processing performance and service performance for CIGS thin film solar components all have adverse effect, especially
Be when carrying out increasingly complex processing to CIGS thin film solar components, such as carry out special-shaped component production, this unfavorable shadow
Sound becomes apparent.Therefore, embodiments of the present invention by the surface of molybdenum film formed recess and/or bulge-structure,
So that the way of contact between the CIGS thin film further prepared and molybdenum film becomes local embedding by traditional planar fashion
The way of contact for entering formula effectively improves adhesive force of the CIGS thin film in molybdenum film layer and attachment stability, with this
It is further complicated that the CIGS thin film solar components that kind CIGS thin film is further prepared not only are adapted for special-shaped component production etc.
Manufacturing procedure, and have preferable service performance and stability.
Optionally, in embodiments of the present invention, step S1 may include：S11, plane molybdenum gold is prepared in substrate surface
Belong to film；S12, plane molybdenum film is delineated or is etched, form the molybdenum with the surface texture of recess and/or protrusion
Metallic film.Or the step S1 also may include：Mask is set during preparing molybdenum film, directly forms tool
There is the molybdenum film of the surface texture of recess and/or protrusion.That is, the recess and/or bulge-structure can pass through
The plane molybdenum film prepared is delineated or is etched to be formed；It can also be by during preparing molybdenum film
Mask is set, is directly formed.
Optionally, when the surface texture of the recess and/or protrusion is by carrying out the plane molybdenum film prepared
When delineation or etching are formed, the delineation can be laser grooving and scribing, mechanical scratching or other delineation modes；The etching can be
Plasma etching, solution etches or other etching modes.Laser grooving and scribing, mechanical scratching, plasma etching or solution etches
It is all more to be suitable for forming the delineation lithographic technique of recess and/or bulge-structure on the surface of plane molybdenum film.
Optionally, in embodiments of the present invention, the molybdenum film with a thickness of 300~500nm；The recess
Surface texture structure be 0.5~3 μm of width, 30~100nm of depth, 1~10mm of spacing several grooves.In 300~500nm
Several grooves of 0.5~3 μm of molybdenum film surface formation width, 30~100nm of depth, 1~10mm of spacing, can not only increase
Adhesive force between CIGS thin film and molybdenum film, while the resistance of CIGS thin film solar components can also be made lower, thus
Be conducive to the raising of CIGS thin film solar components performance.
Optionally, in embodiments of the present invention, the molybdenum film is prepared using vacuum magnetic-control sputtering method；It is described
CIGS thin film is prepared using Co-evaporated Deposition method.In embodiments of the present invention, this is can be used in molybdenum film and CIGS thin film
Various conventional method preparations in field, for example, molybdenum film is prepared with commonly used in the art vacuum magnetic-control sputtering method,
And CIGS thin film is prepared with Co-evaporated Deposition method.It is worth noting that preparing CIGS thin film using Co-evaporated Deposition method
During, copper, indium, gallium, the particle energy of selenium come out due to heating evaporation is limited, so that CIGS thin film and molybdenum film
Between adhesive force it is not strong problem it is especially prominent, therefore, the preparation method of CIGS thin film provided by embodiments of the present invention,
During being particularly suitable for based on Co-evaporated Deposition method preparation CIGS thin film.
Optionally, in embodiments of the present invention, it is thin to be selected from glass, stainless steel film or polyimides for the substrate
Film.
Detailed description of the invention
One or more embodiments are illustrated by the picture in corresponding attached drawing, these exemplary theorys
The bright restriction not constituted to embodiment, composition does not limit the figure in attached drawing.
Fig. 1 is the flow chart of the preparation method of the CIGS thin film in first embodiment according to the present invention；
Fig. 2 is the schematic diagram of the groove structure of the molybdenum film surface in second embodiment according to the present invention.
Specific embodiment
To make the object, technical solutions and advantages of the present invention clearer, below in conjunction with embodiment to of the invention each
Specific embodiment is explained in detail.However, it will be understood by those skilled in the art that in each embodiment party of the present invention
In formula, many technical details are proposed in order to make reader more fully understand the present invention.But even if without these technical details
And various changes and modifications based on the following respective embodiments, claimed technical solution of the invention also may be implemented.
The first embodiment of the present invention is related to a kind of preparation methods of CIGS thin film.The flow chart of this kind of preparation method is such as
Shown in Fig. 1, specifically include：
Step S1, there is the molybdenum film of the surface texture of recess and/or protrusion in substrate surface preparation；
Step S2, CIGS thin film is prepared on the surface of the molybdenum film of the surface texture with recess and/or protrusion.
The core of present embodiment is, for the CIGS thin film absorbed layer and molybdenum film in existing solar components
The not strong problem of adhesive force between back electrode layer, proposes and is introduced in the preparation process of CIGS thin film to molybdenum film
The working process step of surface topography, so that the configuration of surface of molybdenum film layer is changed, in the surface shape of molybdenum film
At recess and/or bulge-structure.By the surface texture of this kind recess and/or protrusion, so that the CIGS thin film further prepared
The way of contact between molybdenum film is changed into the way of contact of locally embedding by traditional planar fashion, thus effectively
Adhesive force of the CIGS thin film in molybdenum film layer is improved, also ensures and is further made with the CIGS thin film of present embodiment
Standby CIGS thin film solar components are adapted for the further complicated manufacturing procedure such as special-shaped component production.
The preparation method of CIGS thin film involved in second embodiment of the present invention is to the system in first embodiment
The optimization of standby technique.Specifically, steps are as follows：
In step sl：In clean glass surface, plane molybdenum film is prepared using vacuum magnetic-control sputtering method, is put down
Face molybdenum film is with a thickness of 300~500nm；In the way of delineating or etching, formed on the surface of plane molybdenum film several
The groove that 0.5~3 μm of width, and 30~100nm of depth of groove, 1~10mm of groove spacing；
Is thin in the molybdenum film surface progress CIGS film with groove structure using Co-evaporated Deposition method in step s 2
Deposition.
In the present embodiment, molybdenum film is prepared using vacuum magnetic-control sputtering method；CIGS thin film is heavy using coevaporation
Area method preparation.To those skilled in the art, the concrete operations and work of molybdenum film are prepared with vacuum magnetic-control sputtering method
Skill controls and is routine techniques with the concrete operations of Co-evaporated Deposition method preparation CIGS thin film and technology controlling and process, therefore, no
It carries out specifically carefully stating herein.Certainly, those skilled in the art can also carry out molybdenum film using other methods as needed
With the preparation of CIGS thin film.It is worth supplementary explanation, is asked since adhesive force is not strong between CIGS thin film and molybdenum film
Topic is especially prominent during using Co-evaporated Deposition method preparation CIGS thin film, therefore, side provided by present embodiment
Method can especially embody its significant technical effect during using Co-evaporated Deposition method preparation CIGS thin film.
For forming the concrete mode of groove structure in plane molybdenum film surface, or a variety of.This embodiment party
Delineation mentioned in formula can be laser grooving and scribing, mechanical scratching or other suitable in the plane molybdenum film prepared
Surface forms the delineation mode of recessed poor structure.Etching mentioned in present embodiment may be plasma etching, solution
Etching or other etching modes being suitable in the surface of the plane molybdenum film prepared formation groove structure.This field
Technical staff can also select or adjust according to actual needs the quarter such as laser grooving and scribing, mechanical scratching, plasma etching, solution etches
Draw or lithographic method concrete operations and technology controlling and process.
For being formed by the concrete shape of recess and/or bulge-structure, present embodiment on the surface of molybdenum film
In provide a kind of preferred embodiment.The schematic diagram of the groove structure of molybdenum film surface in present embodiment such as 2 institute of attached drawing
Show.It has been found that in 0.5~3 μm of 300~500nm molybdenum film surface formation width, 30~100nm of depth, spacing 1
Several grooves 101 of~10mm can not only increase the adhesive force between CIGS thin film and molybdenum film, while can also make CIGS
The resistance of thin film solar component is kept low, so that not only it is conducive to the post-production of CIGS thin film solar components,
Also assure that CIGS thin film solar components product has preferable service performance.
The preparation method of CIGS thin film involved in third embodiment of the present invention is to recessed in second embodiment
The deformation of slot structure generation type.
The difference of present embodiment and second embodiment is：It is not in the molybdenum film surface delineation prepared
Or etching forms groove, but during preparing molybdenum film, by the addition and removal of the mask of respective shapes, directly
Connect several groove structures of 0.5~3 μm of formation width, 30~100nm of depth, 1~10mm of spacing.
Present embodiment can use various specific mask process well-known to those skilled in the art, as long as by covering
The addition and removal of mould achieve the purpose that, in molybdenum film surface formation groove structure, various mask process are suitable for this reality
It applies in mode.
The preparation method of CIGS thin film involved in the 4th embodiment of the invention is in second and third embodiment
Groove structure deformation.
In the present embodiment, using delineation or etching technics (or utilizing mask process), in the table of molybdenum film
Face forms the recess portion and protrusion array for being spaced apart from each other arrangement.This kind of structure can equally make shape between CIGS thin film and molybdenum film
At the way of contact of locally embedding, reach the adhesive force improved CIGS thin film in molybdenum film layer and optimization CIGS thin film too
The technical effect of positive energy component processing performance.
Certainly, the recess portion and protrusion array being intervally arranged in present embodiment can also be deformed into other recess and/or
Bulge-structure, for example, in the recess portion and/or protrusion array of network cross arrangement, the groove annularly arranged or lug, nib etc..This
Outside, for the cross sectional shape of recess and/or bulge-structure, various modifications can also be carried out, such as section is rectangle, triangle
Shape, trapezoidal or various irregular shapes etc..Those skilled in the art can according to actual needs and implement delineation, etching or mask
The convenience of technique determines shape, section and its arrangement mode of optimal recess and/or bulge-structure.
The preparation method of CIGS thin film involved in the 5th embodiment of the invention is to the base in second embodiment
The deformation of bottom material.
Specifically, glass is not chosen in present embodiment as substrate, but chooses stainless steel film or polyimides
Substrate of the film as CIGS thin film solar components.In fact, those skilled in the art can also choose according to actual needs
Technical effect of the invention can be achieved as CIGS thin film solar components substrate in various other suitable materials.
Sixth embodiment of the invention is related to a kind of CIGS thin film solar components, this kind of solar components successively include
Substrate of glass, molybdenum film back electrode layer and CIGS thin film absorbed layer, still further comprise too on CIGS thin film absorbed layer
Other film layer structures of positive energy component.Wherein, molybdenum film with a thickness of 300~500nm；Have on the surface of molybdenum film
There are several grooves of 0.5~3 μm of width, 30~100nm of depth, 1~10mm of spacing.
In CIGS thin film solar components provided by present embodiment, groove knot possessed by the surface of molybdenum film
Structure makes the way of contact between CIGS thin film and molybdenum film become the contact side of locally embedding formula by traditional planar fashion
Formula, the adhesive force between CIGS thin film and molybdenum film are increased, and the resistance of solar components is lower, ensure that
CIGS thin film solar components have preferable processing performance and service performance.
It is worth noting that the groove structure of molybdenum film surface can also be deformed into other recess in present embodiment
And/or bulge-structure, substrate also other materials such as optional selection stainless steel film or Kapton equally can be realized this
The technical effect of invention.
It will be understood by those skilled in the art that the respective embodiments described above are to realize specific embodiments of the present invention,
And in practical applications, can to it, various changes can be made in the form and details, without departing from the spirit and scope of the present invention.
Claims (10)
1. a kind of preparation method of CIGS thin film, which is characterized in that including：
S1, the molybdenum film in substrate surface preparation with the surface texture of recess and/or protrusion；
S2, CIGS thin film is prepared on the surface of the molybdenum film.
2. the preparation method of CIGS thin film according to claim 1, which is characterized in that the step S1 includes：
S11, plane molybdenum film is prepared in substrate surface；
S12, the plane molybdenum film is delineated or is etched, form the surface knot with recess and/or protrusion
The molybdenum film of structure.
3. the preparation method of CIGS thin film according to claim 2, which is characterized in that it is described delineation include laser grooving and scribing or
Mechanical scratching；The etching includes plasma etching or solution etches.
4. the preparation method of CIGS thin film according to claim 1, which is characterized in that the step S1 includes：
Mask is set during preparing molybdenum film, forms the molybdenum of the surface texture with recess and/or protrusion
Metallic film.
5. the preparation method of CIGS thin film according to claim 1, which is characterized in that the molybdenum film with a thickness of
300~500nm；The surface texture of the recess be 0.5~3 μm of width, 30~100nm of depth, 1~10mm of spacing it is several recessed
Slot.
6. the preparation method of CIGS thin film according to claim 1, which is characterized in that the molybdenum film uses vacuum
Magnetron sputtering method preparation；The CIGS thin film is prepared using Co-evaporated Deposition method.
7. the preparation method of CIGS thin film according to claim 1, which is characterized in that the substrate is selected from glass, stainless
Steel film or Kapton.
8. a kind of CIGS thin film solar components successively include substrate, molybdenum film and CIGS thin film, which is characterized in that institute
State the surface texture that molybdenum film has recess and/or protrusion.
9. CIGS thin film solar components according to claim 8, which is characterized in that the molybdenum film with a thickness of
300~500nm；The surface texture of the recess be 0.5~3 μm of width, 30~100nm of depth, 1~10mm of spacing it is several recessed
Slot.
10. CIGS thin film solar components according to claim 8, which is characterized in that the substrate is selected from glass, stainless
Steel film or Kapton.
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Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20110092023A (en) * | 2010-02-08 | 2011-08-17 | 엘지이노텍 주식회사 | Solar cell and method of fabricating the same |
| CN102983219A (en) * | 2012-12-03 | 2013-03-20 | 深圳先进技术研究院 | Preparation method of thin-film solar cell component |
| US20130104972A1 (en) * | 2011-10-26 | 2013-05-02 | Korea Institute Of Science And Technology | Se OR S BASED THIN FILM SOLAR CELL AND METHOD OF MANUFACTURING THE SAME |
| CN105633202A (en) * | 2014-11-06 | 2016-06-01 | 中物院成都科学技术发展中心 | Surface treatment method of solar cell flexible substrate |
| CN106298989A (en) * | 2016-10-15 | 2017-01-04 | 凯盛光伏材料有限公司 | A kind of method improving back electrode of thin film solar cell and absorbed layer adhesive force |
| CN206976349U (en) * | 2017-06-30 | 2018-02-06 | 昆山国显光电有限公司 | Oled display panel |
| CN208315505U (en) * | 2018-06-22 | 2019-01-01 | 北京铂阳顶荣光伏科技有限公司 | CIGS thin film solar components |
-
2018
- 2018-06-22 CN CN201810652703.0A patent/CN108831825A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20110092023A (en) * | 2010-02-08 | 2011-08-17 | 엘지이노텍 주식회사 | Solar cell and method of fabricating the same |
| US20130104972A1 (en) * | 2011-10-26 | 2013-05-02 | Korea Institute Of Science And Technology | Se OR S BASED THIN FILM SOLAR CELL AND METHOD OF MANUFACTURING THE SAME |
| CN102983219A (en) * | 2012-12-03 | 2013-03-20 | 深圳先进技术研究院 | Preparation method of thin-film solar cell component |
| CN105633202A (en) * | 2014-11-06 | 2016-06-01 | 中物院成都科学技术发展中心 | Surface treatment method of solar cell flexible substrate |
| CN106298989A (en) * | 2016-10-15 | 2017-01-04 | 凯盛光伏材料有限公司 | A kind of method improving back electrode of thin film solar cell and absorbed layer adhesive force |
| CN206976349U (en) * | 2017-06-30 | 2018-02-06 | 昆山国显光电有限公司 | Oled display panel |
| CN208315505U (en) * | 2018-06-22 | 2019-01-01 | 北京铂阳顶荣光伏科技有限公司 | CIGS thin film solar components |
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