CN107658365A - Horizontal PiNGe photodetectors based on LRC techniques and preparation method thereof - Google Patents
Horizontal PiNGe photodetectors based on LRC techniques and preparation method thereof Download PDFInfo
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- 238000000034 method Methods 0.000 title claims abstract description 76
- 238000002360 preparation method Methods 0.000 title claims abstract description 14
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- 239000000463 material Substances 0.000 claims abstract description 57
- 239000000758 substrate Substances 0.000 claims abstract description 57
- 238000002425 crystallisation Methods 0.000 claims abstract description 35
- 230000008025 crystallization Effects 0.000 claims abstract description 35
- 238000005516 engineering process Methods 0.000 claims abstract description 24
- 239000011241 protective layer Substances 0.000 claims abstract description 23
- 238000002161 passivation Methods 0.000 claims abstract description 20
- 239000007769 metal material Substances 0.000 claims abstract description 14
- 230000008569 process Effects 0.000 claims abstract description 11
- 238000001816 cooling Methods 0.000 claims abstract description 10
- 239000013078 crystal Substances 0.000 claims description 13
- 238000005468 ion implantation Methods 0.000 claims description 11
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- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 4
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- 238000002347 injection Methods 0.000 claims description 4
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- 229910052760 oxygen Inorganic materials 0.000 claims description 4
- 239000001301 oxygen Substances 0.000 claims description 4
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier
- H01L31/105—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the PIN type
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The present invention relates to a kind of horizontal PiN Ge photodetectors based on LRC techniques and preparation method thereof.This method includes：Make SOI substrate；Ion implanting forms P and n-type doping area respectively in top layer Si floor；Ge materials are formed undoped with region surface and form protective layer in top layer Si layer；Whole substrate is heated, and uses the whole substrate of laser technology crystallization, Ge materials is formed crystallization Ge layers after cooling；Protective layer is removed, forms passivation layer；Etch Passivation forms contact hole, deposits metal material in the contact hole and forms contact zone.The present invention is by using laser crystallization process again, control accuracy is high, crystallization rate is fast, processing step is simple, and process cycle is short, the advantages such as heat budget is low, the crystallization Ge layers of formation, the dislocation density, surface roughness, boundary defect at Ge/Si interfaces can be effectively reduced, Ge/Si interfacial characteristicses are lifted, so that photodetector possesses high-speed response rate and the characteristic of high-quantum efficiency.
Description
Technical field
The invention belongs to technical field of integrated circuits, and in particular to a kind of horizontal PiN Ge photoelectricity based on LRC techniques is visited
Survey device and preparation method thereof.
Background technology
In recent years, with the development of optical communication technique, speed fiber optic communication systems require that semiconductor photodetector also has
Higher speed, integrated development trend require that semiconductor light detection integrates with other photoelectric devices.So high-performance optical is visited
The research for surveying device has very important meaning.
With existing technology, it is always the target that people pursue that Si bases photoelectricity, which integrates reception chip,.At present, in the market
Most semiconductor detector is made using the III-V material of direct band gap, such as InGaAs and InSb materials.
It has the advantages that detective quantum efficiency is high, dark current is small and and has been enter into industrialization stage, but its expensive, thermal conductivity
Can and mechanical performance it is poor and limit it with the shortcomings of existing ripe Si processing compatibility differences and integrated in Si base photoelectricity
Application in technology.
The content of the invention
In order to solve the above-mentioned problems in the prior art, the invention provides a kind of horizontal PiN based on LRC techniques
Ge photodetectors and preparation method thereof.
An embodiment provides a kind of preparation side of the horizontal PiN Ge photodetectors based on LRC techniques
Method, including：
Make SOI substrate；
P-type doped region and n-type doping area are formed respectively in the top layer Si floor of the SOI substrate using ion implantation technology
So as to form P-i-N structures；
Ge materials are formed undoped with region surface in the top layer Si layer, and is formed and protected in the Ge material surfaces
Layer；
Whole substrate is heated, and uses the whole substrate of laser technology crystallization, is formed the Ge materials after cooling
Crystallization Ge layers；
The protective layer is removed, passivation layer is formed in whole substrate surface；
Etch the passivation layer and form contact hole, metal material is deposited in the contact hole and forms contact zone to be formed
State horizontal PiN Ge photodetectors.
In one embodiment of the invention, SOI substrate is being made, including：
Choose single crystal Si substrate piece；
It is 1.8 × 10 from dosage18cm-2O+Carry out note oxygen to the single crystal Si substrate piece to isolate, shape after high annealing
Into the SOI substrate.
In one embodiment of the invention, distinguished using ion implantation technology in the top layer Si layer of the SOI substrate
P-type doped region and n-type doping area are formed, including：
Using CVD techniques, in the SOI substrate surface deposition SiO2Material；
Using the first mask plate, the SiO of the first designated area is etched away using anisotropic etch process2Material；
B ion implantings are carried out to first designated area to be formed in the top layer Si using ion implantation technology
The p-type doped region；
Using the second mask plate, the SiO of the second designated area is etched away using anisotropic etch process2Material；
P ion injection is carried out to second designated area using ion implantation technology to be formed in the top layer Si
The n-type doping area.
In one embodiment of the invention, Ge materials, bag are formed undoped with region surface in the top layer Si layer
Include：
Using the 3rd mask plate, at a temperature of 275 DEG C~325 DEG C, given birth to using CVD techniques in the top layer Si layer surface
Long thickness is 40~50nm Ge inculating crystal layers；
At a temperature of 500 DEG C~600 DEG C, using CVD techniques the Ge seed crystal surfaces growth thickness be 150~
250nm Ge body layers.
In one embodiment of the invention, protective layer is formed in the Ge material surfaces, including：
Using the 3rd mask plate, using CVD techniques, SiO is deposited in the Ge material surfaces2Material forms the protection
Layer.
In one embodiment of the invention, whole substrate is heated, and uses the whole substrate of laser technology crystallization,
The Ge materials are made to form crystallization Ge layers after cooling, including：
By the whole silicon including the SOI substrate, the Ge materials and the protective layer to 650 DEG C -750 DEG C；
Optical maser wavelength is used as 808nm, 100 μm of 100 μ m of laser spot size, laser power 1.5kW/cm2, expose
Light 40ms, the Ge materials are made to form the crystallization Ge layers after natural cooling.
In one embodiment of the invention, passivation layer is formed in whole substrate surface, including：
Using CVD techniques, SiO is deposited in the whole substrate surface including the SOI substrate, the crystallization Ge layers2Material
Form the passivation layer.
In one embodiment of the invention, etch the passivation layer and form contact hole, gold is deposited in the contact hole
Belong to material and form contact zone, including：
Using the 4th mask plate, the p-type doped region and the n-type doping area are etched away using anisotropic etch process
The passivation layer of surface portion opening position is to form the contact hole；
The metal material is deposited in the contact hole using electron beam deposition technique；
The unnecessary metal material of the crystallization Ge layer surfaces is removed using CMP to form the contact zone.
In one embodiment of the invention, the metal material is Cr, Au or Ni.
An alternative embodiment of the invention provides a kind of horizontal PiN Ge photodetectors based on LRC techniques, wherein,
The photodetector is prepared by any described method in above-described embodiment and formed.
The photodetector of the embodiment of the present invention, at least had the following advantages that relative to prior art：
1) laser that uses of present invention crystallization process again, the dislocation density and rough surface of Ge epitaxial layers can effectively be reduced
Degree, there is Ge epitaxial layers crystal mass height, and processing step is simple, process cycle is short, the advantages such as heat budget is low；
2) continuous laser auxiliary crystallization Ge epitaxial layers of the present invention, Ge/Si interface defect densities can be reduced, and then reduces detection
The dark current of device, be advantageous to improve the quantum efficiency of device；
3) the horizontal PiN Ge photodetectors of the present invention, P areas and N areas are Si semiconductors, are adopted compared to other Ge detectors
By the use of Ge semiconductors as the P areas of detector and N areas, this structure Si semiconductors ohmic contact craft is ripe, and contact effect is more preferable.
Brief description of the drawings
Fig. 1 is that a kind of structure of the horizontal PiN Ge photodetectors based on LRC techniques provided in an embodiment of the present invention is shown
It is intended to；
Fig. 2 is a kind of preparation side of the horizontal PiN Ge photodetectors based on LRC techniques provided in an embodiment of the present invention
Method schematic flow sheet；
Fig. 3 a- Fig. 3 j are a kind of horizontal PiN Ge photodetectors based on LRC techniques provided in an embodiment of the present invention
Preparation method schematic diagram；
Fig. 4 is a kind of schematic diagram of laser crystallization technique provided in an embodiment of the present invention.
Embodiment
Further detailed description is done to the present invention with reference to specific embodiment, but embodiments of the present invention are not limited to
This.
Embodiment one
Fig. 1 is referred to, Fig. 1 is a kind of horizontal PiN Ge photodetections based on LRC techniques provided in an embodiment of the present invention
The structural representation of device.The photodetector includes Si substrates 001, SiO2The SOI linings that material 002 and Si materials 003 form
Bottom and the crystallization Ge layers 010 being arranged in the SOI substrate.Wherein, Si materials 003 are mixed including n-type doping area, i types area and p-type
Miscellaneous area is so as to form horizontal P-i-N structures, and crystallization Ge floor 010 is arranged on the i types area surface, and metal electrode 012 connects respectively
To n-type doping area and p-type doped region.
Extension Ge semi-conducting materials are cheap also completely compatible with existing Si techniques on Si substrates, and Ge materials
Direct band gap is about 0.67eV, has preferable response characteristic to the optical signal of C-band in optic communication (1528-1560nm).And
A kind of horizontal PiN Ge photodetectors due to there is the presence of intrinsic region, thus have sound as a kind of its structure of new optical detection
Response is high, and fast response time, working bias voltage is low, and input impedance is high, and working frequency is big, and manufacturing technology and semiconductor planar technology are simultaneous
The advantages that appearance.Horizontal PiN Ge photodetectors simultaneously, compared to Ge metal contact process, employ more ripe Si metals and connect
Touch technique, but also overcome vertically enter light type photo-detector high speed response quantum efficiency between contradiction.Therefore, research and
Prepare horizontal PiN Ge photodetectors and cause the great interest of people.
Fig. 2 is referred to, Fig. 2 is a kind of horizontal PiN Ge photodetections based on LRC techniques provided in an embodiment of the present invention
The preparation method schematic flow sheet of device.This method comprises the following steps：
Step a, SOI substrate is made；
Step b, P types doped region and N are formed respectively in the top layer Si layer of the SOI substrate using ion implantation technology
Type doped region is so as to forming P-i-N structures；
Step c, Ge materials are formed undoped with region surface in the top layer Si layer, and in the Ge material surfaces shape
Into protective layer；
Step d, whole substrate is heated, and uses the whole substrate of laser technology crystallization, the Ge materials are made after cooling
Material forms crystallization Ge layers；
Step e, the protective layer is removed, passivation layer is formed in whole substrate surface；
Step f, etch the passivation layer and form contact hole, deposited in the contact hole metal material formed contact zone with
Form the horizontal PiN Ge photodetectors.
For step a, can include：
Step a1, single crystal Si substrate piece is chosen；
Step a2, it is 1.8 × 10 from dosage18cm-2O+The single crystal Si substrate piece is carried out to note oxygen isolation, high temperature moves back
The SOI substrate is formed after fire.
For step b, can include：
Step b1, using CVD techniques, in the SOI substrate surface deposition SiO2Material；
Step b2, using the first mask plate, the SiO of the first designated area is etched away using anisotropic etch process2Material
Material；
Step b3, B ion implantings are carried out with the top layer Si to first designated area using ion implantation technology
It is middle to form the p-type doped region；
Step b4, using the second mask plate, the SiO of the second designated area is etched away using anisotropic etch process2Material
Material；
Step b5, P ion injection is carried out to second designated area using ion implantation technology with the top layer Si
It is middle to form the n-type doping area.
For step c, can include：
Step c1, using the 3rd mask plate, at a temperature of 275 DEG C~325 DEG C, using CVD techniques in the top layer Si layer
Superficial growth thickness is 40~50nm Ge inculating crystal layers；
Step c2, at a temperature of 500 DEG C~600 DEG C, it is in the Ge seed crystal surfaces growth thickness using CVD techniques
150~250nm Ge body layers.
For step c, can also include：
Step c3, using the 3rd mask plate, using CVD techniques, SiO is deposited in the Ge material surfaces2Material forms institute
State protective layer.
For step d, can include：
Step d1, by the whole silicon including the SOI substrate, the Ge materials and the protective layer to 650 DEG C-
750℃；
Step d2, optical maser wavelength is used as 808nm, 100 μm of 100 μ m of laser spot size, laser power 1.5kW/
cm2, 40ms is exposed, the Ge materials is formed the crystallization Ge layers after natural cooling.
Refer to Fig. 4, a kind of Fig. 4 positions schematic diagram of laser crystallization technique provided in an embodiment of the present invention.But Si substrates
The method that upper horizontal PiN Ge photodetectors use traditional high temperature two-step growth Ge/Si virtual substrates, can not solve Ge
A large amount of helical dislocations in epitaxial layer, and obtained cushion is thicker, and surface roughness is higher, and these factors cause photodetector
The parameters such as quantum efficiency efficiency greatly reduce.Therefore, the present invention proposes horizontal stroke in a kind of laser assisted crystallization Ge/Si virtual substrates
To PiN Ge photodetector preparation methods.Crystallization technology is a kind of method of thermal induced phase transition crystallization to laser again, brilliant by laser
Change the process of fusing recrystallization, big crystal grain can be grown, the higher Ge films of crystallization degree can be obtained, it is significantly relatively low
The defects of Ge materials.
For step e, can include：
Using CVD techniques, SiO is deposited in the whole substrate surface including the SOI substrate, the crystallization Ge layers2Material
Form the passivation layer.
For step f, can include：
Step f1, using the 4th mask plate, the p-type doped region and the N are etched away using anisotropic etch process
The passivation layer of type doped region surface portion opening position is to form the contact hole；
Step f2, the metal material is deposited in the contact hole using electron beam deposition technique；
Step f3, the unnecessary metal material of the crystallization Ge layer surfaces is removed using CMP to form described connect
Touch area.
Wherein, the metal material is Cr, Au or Ni.
The embodiment of the present invention, by using laser crystallization process again, control accuracy is high, and crystallization rate is fast, processing step letter
Single, process cycle is short, the advantages such as heat budget is low, the crystallization Ge layers of formation, can effectively reduce dislocation density, the table at Ge/Si interfaces
Surface roughness, boundary defect, Ge/Si interfacial characteristicses are lifted, so that photodetector possesses high-speed response rate and high quantum effect
The characteristic of rate.
Embodiment two
It is a kind of horizontal stroke based on LRC techniques provided in an embodiment of the present invention please also refer to Fig. 3 a- Fig. 3 j, Fig. 3 a- Fig. 3 j
To the preparation method schematic diagram of PiN Ge photodetectors.The present embodiment is on the basis of above-described embodiment, to the base of the present invention
It is described in detail in the preparation method of the horizontal PiN Ge photodetectors of LRC techniques as follows：
S101, substrate are chosen.As shown in Figure 3 a, it is original material to choose monocrystalline silicon Si substrates 001；
It is prepared by S102, SOI substrate.As shown in Figure 3 b, it is 1.8 × 10 from O+ dosage18cm-3Carry out noting oxygen isolation, then
High annealing is carried out, forms the SiO of 1 μ m-thick2The SOI substrate of Si layers 003 thick 002 and 300nm of layer.
S103, p-type ion implanting.As shown in Figure 3 c, the first thick SiO of 200nm are deposited2Protective layer 004, selectivity are carved
Erosion, B ion implantings, form 1 × 1020cm-3P-type doped region 005.
S104, N-type ion implanting.As shown in Figure 3 d, the 2nd SiO is etched away2Protective layer 004,200nm thickness is deposited again
2nd SiO2Protective layer 006, selective etch, P ion injection, form 1 × 1020cm-3N-type doping area 007, etches away second
SiO2Protective layer 006.The not middle doped portion of Si floor 003 is i types area.
S105, undoped with Si regioselectivity outer layer growth Ge materials, including Ge inculating crystal layers 008 and Ge body layers
009。
S1051, Ge inculating crystal layer 008 grows.As shown in Figure 3 e, at a temperature of 275 DEG C~325 DEG C, life in CVD techniques is utilized
Long 40~50nm Ge inculating crystal layers 008；
S1052, Ge body layer 009 grows.As illustrated in figure 3f, at a temperature of 500 DEG C~600 DEG C, using CVD techniques
The Ge body layers 009 of the superficial growth 250nm of Ge inculating crystal layers 008；
S106, protective layer are SiO2Preparation.As shown in figure 3g, using CVD techniques on the surface of Ge body layers 009
Upper deposit 150nm the 3rd SiO2Protective layer 010；
Crystallization and the protective layer etching of S107, Ge epitaxial layer, such as Fig. 3 h.The single crystalline Si substrate 001, described will be included
Ge inculating crystal layers 008, the Ge body layers 009 and the 3rd SiO2The whole backing material of protective layer 010 is heated to 700 DEG C,
Whole backing material described in laser technology crystallization continuously is used, wherein, optical maser wavelength 808nm, the μ m of laser spot size 100
100 μm, laser power 1.5kW/cm2, time for exposure 40ms, natural cooling formation crystallization Ge layers 011.Relatively low Ge materials
Dislocation density and surface roughness, improve Ge/Si interface qualities, can effectively reduce dark current lifting quantum efficiency.Then
The SiO in Fig. 3 g is etched using dry etch process2Protective layer 010.
It is prepared by S108, metal contact hole.As shown in figure 3i, the thick SiO of 300~350nm are deposited2Passivation layer 012, isolate platform
Face makes electrical contact with extraneous.Contact hole is etched, falls specified SiO with etching technics selective etch2Passivation layer 012 forms metal contact
Hole.
It is prepared by S109, metal interconnection.As shown in Fig. 3 j.The thick Cr/Au of 150~200nm are deposited using electron beam evaporation
Layer.The metal Cr/Au of selective eating away designated area is carved using etching technics, (CMP is planarized using chemically mechanical polishing
Processing, form metal electrode 013.
Above content is to combine specific preferred embodiment further description made for the present invention, it is impossible to is assert
The specific implementation of the present invention is confined to these explanations.For general technical staff of the technical field of the invention,
On the premise of not departing from present inventive concept, some simple deduction or replace can also be made, should all be considered as belonging to the present invention's
Protection domain.
Claims (10)
- A kind of 1. preparation method of the horizontal PiN Ge photodetectors based on LRC techniques, it is characterised in that including：Make SOI substrate；Formed respectively in the top layer Si floor of the SOI substrate using ion implantation technology p-type doped region and n-type doping area so as to Form P-i-N structures；Ge materials are formed undoped with region surface in the top layer Si layer, and protective layer is formed in the Ge material surfaces；Whole substrate is heated, and uses the whole substrate of laser technology crystallization, the Ge materials is formed crystallization after cooling Ge layers；The protective layer is removed, passivation layer is formed in whole substrate surface；Etch the passivation layer and form contact hole, metal material is deposited in the contact hole and forms contact zone to form the horizontal stroke To PiN Ge photodetectors.
- 2. according to the method for claim 1, it is characterised in that SOI substrate is being made, including：Choose single crystal Si substrate piece；It is 1.2 × 10 from dosage18cm-2-1.8×1018cm-2O+The single crystal Si substrate piece is carried out to note oxygen isolation, high temperature The SOI substrate is formed after annealing.
- 3. according to the method for claim 1, it is characterised in that using ion implantation technology the SOI substrate top layer P-type doped region and n-type doping area are formed in Si floor respectively, including：Using CVD techniques, in the SOI substrate surface deposition SiO2Material；Using the first mask plate, the SiO of the first designated area is etched away using anisotropic etch process2Material；B ion implantings are carried out to first designated area to form the P in the top layer Si using ion implantation technology Type doped region；Using the second mask plate, the SiO of the second designated area is etched away using anisotropic etch process2Material；P ion injection is carried out to second designated area using ion implantation technology to form the N in the top layer Si Type doped region.
- 4. according to the method for claim 1, it is characterised in that form Ge undoped with region surface in the top layer Si layer Material, including：Using the 3rd mask plate, at a temperature of 275 DEG C~325 DEG C, using CVD techniques in the top layer Si layer surface growth thickness For 40~50nm Ge inculating crystal layers；In the Ge seed crystal surfaces growth thickness it is 150~250nm using CVD techniques at a temperature of 500 DEG C~600 DEG C Ge body layers.
- 5. according to the method for claim 1, it is characterised in that protective layer is formed in the Ge material surfaces, including：Using the 3rd mask plate, using CVD techniques, SiO is deposited in the Ge material surfaces2Material forms the protective layer.
- 6. according to the method for claim 1, it is characterised in that whole substrate is heated, and it is brilliant using laser technology Change whole substrate, the Ge materials is formed crystallization Ge layers after cooling, including：By the whole silicon including the SOI substrate, the Ge materials and the protective layer to 650 DEG C -750 DEG C；Optical maser wavelength is used as 808nm, 100 μm of 100 μ m of laser spot size, laser power 1.5kW/cm2, 40ms is exposed, The Ge materials are made to form the crystallization Ge layers after natural cooling.
- 7. according to the method for claim 1, it is characterised in that passivation layer is formed in whole substrate surface, including：Using CVD techniques, SiO is deposited in the whole substrate surface including the SOI substrate, the crystallization Ge layers2Material forms institute State passivation layer.
- 8. according to the method for claim 1, it is characterised in that etch the passivation layer and form contact hole, in the contact Metal material is deposited in hole and forms contact zone, including：Using the 4th mask plate, the p-type doped region and n-type doping area surface are etched away using anisotropic etch process The passivation layer at portion is to form the contact hole；The metal material is deposited in the contact hole using electron beam deposition technique；The unnecessary metal material of the crystallization Ge layer surfaces is removed using CMP to form the contact zone.
- 9. according to the method for claim 8, it is characterised in that the metal material is Cr, Au or Ni.
- 10. a kind of horizontal PiN Ge photodetectors based on LRC techniques, it is characterised in that the photodetector is by right It is required that the method described in any one of 1-9 prepares to be formed.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109119500A (en) * | 2018-08-21 | 2019-01-01 | 南通赛勒光电科技有限公司 | A kind of transverse direction germanium detector structure and preparation method |
| CN109727974A (en) * | 2019-01-03 | 2019-05-07 | 京东方科技集团股份有限公司 | Photosensory assembly, preparation method and sensitive substrate |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN85103942A (en) * | 1985-05-16 | 1986-12-24 | 中国科学院上海冶金所 | The LASER HEATING recrystallization method of polysilicon on the insulation layer |
| CN1553475A (en) * | 2003-06-04 | 2004-12-08 | 友达光电股份有限公司 | Manufacture of polysilicon crystal thin films by quasi-molecular laser re-crystallization process |
| WO2005034193A2 (en) * | 2003-09-19 | 2005-04-14 | The Trustees Of Columbia University In The City Ofnew York | Single scan irradiation for crystallization of thin films |
| EP2206808A1 (en) * | 2008-12-23 | 2010-07-14 | Imec | Method for manufacturing a mono-crystalline semiconductor layer on a substrate |
| CN105405916A (en) * | 2015-12-22 | 2016-03-16 | 中国科学院半导体研究所 | Silicon-based wide spectrum detector and preparation method therefor |
| CN106463566A (en) * | 2014-03-10 | 2017-02-22 | 科锐安先进科技有限公司 | Germanium metal-contact-free near-ir photodetector |
-
2017
- 2017-08-11 CN CN201710687182.8A patent/CN107658365A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN85103942A (en) * | 1985-05-16 | 1986-12-24 | 中国科学院上海冶金所 | The LASER HEATING recrystallization method of polysilicon on the insulation layer |
| CN1553475A (en) * | 2003-06-04 | 2004-12-08 | 友达光电股份有限公司 | Manufacture of polysilicon crystal thin films by quasi-molecular laser re-crystallization process |
| WO2005034193A2 (en) * | 2003-09-19 | 2005-04-14 | The Trustees Of Columbia University In The City Ofnew York | Single scan irradiation for crystallization of thin films |
| EP2206808A1 (en) * | 2008-12-23 | 2010-07-14 | Imec | Method for manufacturing a mono-crystalline semiconductor layer on a substrate |
| CN106463566A (en) * | 2014-03-10 | 2017-02-22 | 科锐安先进科技有限公司 | Germanium metal-contact-free near-ir photodetector |
| CN105405916A (en) * | 2015-12-22 | 2016-03-16 | 中国科学院半导体研究所 | Silicon-based wide spectrum detector and preparation method therefor |
Non-Patent Citations (3)
| Title |
|---|
| J. WANG: ""Low-Voltage High-Speed (18 GHz/1 V) Evanescent-Coupled Thin-Film-Ge Lateral PIN Photodetectors Integrated on Si Waveguide"", 《IEEE PHOTONICS TECHNOLOGY LETTERS》 * |
| LAURENT VIVIEN: ""Waveguide germanium PIN photodiodes for optical communication applications"", 《ECS TRANSACTIONS》 * |
| 黄志伟: ""激光退火改善 Si 上外延 Ge 晶体质量"", 《第十一届全国硅基光电子材料及器件研讨会论文摘要集》 * |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109119500A (en) * | 2018-08-21 | 2019-01-01 | 南通赛勒光电科技有限公司 | A kind of transverse direction germanium detector structure and preparation method |
| CN109119500B (en) * | 2018-08-21 | 2019-12-06 | 南通赛勒光电科技有限公司 | Transverse germanium detector structure and preparation method |
| CN109727974A (en) * | 2019-01-03 | 2019-05-07 | 京东方科技集团股份有限公司 | Photosensory assembly, preparation method and sensitive substrate |
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