CN1553475A - Manufacture of polysilicon crystal thin films by quasi-molecular laser re-crystallization process - Google Patents
Manufacture of polysilicon crystal thin films by quasi-molecular laser re-crystallization process Download PDFInfo
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- CN1553475A CN1553475A CNA031412521A CN03141252A CN1553475A CN 1553475 A CN1553475 A CN 1553475A CN A031412521 A CNA031412521 A CN A031412521A CN 03141252 A CN03141252 A CN 03141252A CN 1553475 A CN1553475 A CN 1553475A
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Abstract
First, the method provides a substrate, where first region, second region and third region are defined on surface of the substrate. Next, a film of amorphous silicon is formed on the substrate, and a part of the film of amorphous silicon is removed in order to form an alignment mark on the third region. Then, a mask layer is formed on the film of amorphous silicon, and the mask layer in the first region is removed. Recrystal procedure is carried out to make recrystallization of the film of amorphous silicon in first region become a polysilicon film.
Description
Technical field
The invention provides a kind of manufacture method of polysilicon membrane, refer to a kind of quasi-molecule crystallization again (excimer laser crystallization, ELC) method of technology making polysilicon membrane utilized especially.
Background technology
Along with making rapid progress of science and technology, the intelligent information product of frivolous, power saving, portable has been full of our living space, and display has been played the part of considerable role betwixt, no matter be mobile phone, personal digital assistant or notebook computer, all need the interface of display as man-machine communication.Yet mass-produced now amorphous silicon film transistor LCD (a-TFT LCD), because the restriction of carrier mobility, the demand that will further reach frivolous, power saving, high image quality is difficulty to some extent, get and with will be low temperature polycrystalline silicon (low temperature polysilicon, LTPS) Thin Film Transistor-LCD.
In LCD, because the heat resistance of general glass substrate often can only arrive 600 ℃, therefore if at high temperature directly make the torsional deformation that polysilicon membrane will cause glass substrate, therefore traditional polycrystalline SiTFT LCD often must use expensive quartz as base material, and range of application often also can only be confined to undersized liquid crystal panel.Therefore, at present another kind utilize amorphous silicon membrane again the making method for low-temperature multi-crystal silicon film of crystallization become main flow gradually, wherein (excimer laser crystallization, ELC) technology especially comes into one's own with excimer laser crystallization more again.
In addition, on the display floater of LCD, often comprised the low-temperature polysilicon film transistor that a plurality of matrix forms are arranged, generate image in order to the pixel electrode that drives in this display floater, therefore, formed polysilicon membrane all includes a plurality of polysilicon islands (polysilicon island) structure usually and is used as the respectively active region of this low-temperature polysilicon film transistor (active area) respectively, to form respectively source electrode, drain electrode and the channel region therein of this low-temperature polysilicon film transistor.
Now for convenience of explanation for the purpose of, be example only in the diagram below with a polysilicon island structure, illustrate existing in the excimer laser crystallization processes method of making a polysilicon membrane again.Please refer to Fig. 1 to Fig. 4, Fig. 1 to Fig. 4 in the prior art with excimer laser again crystallization processes make the method schematic diagram of a polysilicon membrane.As shown in Figure 1, one display floater 10 at first is provided, and display floater 10 includes a substrate 12, then carry out a sputtering process to form a metal level (not shown) in substrate 12 surfaces, utilize one first photoetching and etch process with this metal layer patternization again, to form an alignment mark (alignment mark) 14 in substrate 12 surfaces.Wherein, substrate 12 is glass substrate, and alignment mark 14 then is to include at least one raised structures, is located at the outer peripheral areas that can not carry out circuit layout, therefore even through several depositing operation, but alignment mark 14 still supply equipment know identification.
Generally speaking, in this polysilicon membrane and follow-up display floater manufacturing process, tend to use the multiple tracks photoetching process, in case the situation of these photoetching process generation contraposition deviations, just be easy to cause the reduction of element reliability, even the generation major defect causes the situation of afunction, therefore for improving the alignment ability of each equipment, before carrying out operations (especially photoetching process), each equipment all can position according to alignment mark 14 earlier, to reduce because of the inaccurate defective that generates of contraposition.
As shown in Figure 2, then form a resilient coating 16 and an amorphous silicon membrane 18 in regular turn in substrate 12 surfaces, and amorphous silicon membrane 18 surface definition have a first area 20 and a second area 30, subsequently more as shown in Figure 3, the shielding layer (masklayer) 22 in amorphous silicon membrane 18 surface formation one patterning is covered on the second area 30.Wherein, shielding layer 22 can be one and includes the monolayer material of a metal level, a nitrogen silicon layer or the sandwich construction that is combined by above-mentioned material, and its function is that the reflectivity that increases second area 30 by metal level reduces the heat absorption of below amorphous silicon membrane 18 or utilizes the high thermal conduction rate of nitrogen silicon layer to make the amorphous silicon membrane 18 that is coated with shielding layer 22 form nucleus earlier.Generally, the purpose that forms shielding layer 22 is to make the amorphous silicon membrane 18 of second area 30 (being coated with the zone of shielding layer 22) to become partially molten state, and the amorphous silicon membrane 18 of first area 20 (not being coated with the zone of shielding layer 22) reaches complete molten condition, therefore after excimer laser irradiation finishes, when secondary molten amorphous silicon layer 18 begins to solidify, can be because have a heterogeneous interface between partial melting and complete melt region, and be the nucleation basic point with the partial melting zone, second area 30 beginnings by partial melting are made horizontal crystal grain-growth toward the first area 20 of fusion fully, to form a polysilicon membrane 24 in first area 20.
As shown in Figure 4, then carry out a photoetching and etch process, remove shielding layer 22 and polysilicon layer 18 on the second area 30, in first area 20, to form a polysilicon island structure 24.At last carry out follow-up display panels technology again, utilize polysilicon island 24, to constitute the drive circuit in the panel of LCD as the active region in the LCD.
In above-mentioned excimer laser again in the crystallization processes, when defining the alignment mark position, with the shielding layer patterning and at last form this polysilicon island the time after, all each need use photoetching process one time, that is to say needs to use three road photoetching processes altogether in the manufacturing process of whole polysilicon island, can form a polysilicon membrane with this polysilicon island structure, though so position of said method may command crystal boundary formation, but manufacturing process is but considerably complicated, not only need to expend the more process time, also can cause the rising of manufacturing cost, therefore, how to simplify excimer laser crystallization processes again, real is current important subject.
Summary of the invention
Main purpose of the present invention is to provide a kind of excimer laser crystallization processes method of making a polysilicon membrane again of utilizing, and improves the complicated shortcoming of technology in the prior art, to reduce manufacturing cost and to shorten the process time.
Provide a kind of excimer laser crystallization processes method of making a polysilicon membrane again of utilizing of the present invention.One substrate at first is provided, and this substrate surface definition has a first area, one second area is around this first area, and one the 3rd zone, then form an amorphous silicon membrane in this substrate top, again by one first photoetching and etch process, remove this amorphous silicon membrane of part in the 3rd zone, and in the 3rd zone, form an alignment mark, on this amorphous silicon membrane, form a shielding layer subsequently, and carry out one second photoetching and etch process, remove this shielding layer in this this first area, amorphous silicon membrane top and carry out this excimer laser crystallization processes again, make this amorphous silicon membrane in this first area recrystallize into a polysilicon membrane, carry out an etch process at last again, to remove this shielding layer.
Polysilicon membrane manufacture method of the present invention only need use the twice photoetching process can form the polysilicon island structure of may command crystal boundary position, so can significantly simplify technology, improve the complicated shortcoming of technology in the prior art, to reduce manufacturing cost and to shorten the process time.
Description of drawings
Fig. 1 to 4 in the prior art with excimer laser again crystallization processes make the method schematic diagram of a polysilicon membrane;
Fig. 5 to Fig. 9 is for making the method schematic diagram of a polysilicon membrane with quasi-molecule laser annealing technology in the first embodiment of the invention;
Figure 10 is a method schematic diagram of making polysilicon membrane in the second embodiment of the invention with quasi-molecule laser annealing technology; And
Figure 11 is a method schematic diagram of making polysilicon membrane in the third embodiment of the invention with quasi-molecule laser annealing technology.
Description of reference numerals in the accompanying drawing is as follows:
10 display floaters, 12 substrates
14 alignment marks, 16 resilient coatings
18 amorphous silicon membranes, 20 first areas
22 shielding layers, 24 amorphous silicon membranes
30 second areas, 110 display floaters
112 substrates, 114 resilient coatings
116 amorphous silicon membranes, 118 alignment marks
120 first areas, 122 shielding layers
124 polysilicon membranes, 130 second areas
140 the 3rd regional 210 display floaters
212 substrates, 214 resilient coatings
216 amorphous silicon membranes, 218 alignment marks
220 first areas, 222 shielding layers
223 heat contain cover layer 224 polysilicon membranes
230 second areas 240 the 3rd zone
322 shielding layers, 323 heat contain cover layer
324 polysilicon membranes
Embodiment
Please refer to Fig. 5 to Fig. 9, Fig. 5 to Fig. 9 is a method schematic diagram of making polysilicon membrane in the first embodiment of the invention with quasi-molecule laser annealing technology.As shown in Figure 5, at first provide a display floater 110, and display floater 110 includes a substrate 112, and substrate 112 surface definition have a first area 120, a second area 130 around the first area 120 and 1 the 3rd zone.Then form resilient coatings 114 to avoid the upwards diffusion and influence the polysilicon membrane quality that is generated in subsequent technique of impurity substrate 112 in, then form an amorphous silicon membrane 116 in resilient coating 114 tops in substrate 112 surfaces.In a preferred embodiment of the invention, substrate 110 is glass substrate, resilient coating 112 is a silica layer or the polycrystalline structure be made up of jointly silica layer and nitrogen silicon layer, and that the method that forms above-mentioned each layer has is quite multiple, such as low-pressure chemical vapor deposition (LPCVD) technology, plasma auxiliary chemical vapor deposition (PECVD) technology and sputter (sputtering) technology etc., this is all existing standard technology, so do not add to give unnecessary details at this.
As shown in Figure 6, then carry out one first photoetching and etch process, in order to amorphous silicon membrane 116 patternings, and remove portion of amorphous silicon film 116 in the 3rd zone 140 simultaneously, with formation one alignment mark 118 in the 3rd zone 140.Wherein alignment mark 118 includes at least one raised structures, and is located at the outer peripheral areas that can not carry out circuit layout, therefore even through several depositing operation, but alignment mark 118 still supply equipment know identification.
Then as shown in Figure 7, on display floater 110, form a shielding layer 122, be covered on resilient coating 114, amorphous silicon membrane 116 and the alignment mark 118.Wherein, shielding layer 122 is one to include silica layer (SiO
x), nitrogen silicon layer (SiN), metal level, the single layer structure of silicon oxynitride (SiON) layer or the multiple-level stack structure that combines by above-mentioned material, and can form for example existing low-pressure chemical vapor deposition (LPCVD) technology, plasma auxiliary chemical vapor deposition (PECVD) technology and sputter (sputtering) technology etc. according to the suitable process of employed material selection.
As shown in Figure 8, carry out one second photoetching and etch process subsequently, remove the shielding layer 122 in the first area 120, so that the amorphous silicon membrane 116 of first area 120 exposes.Then shine with an excimer laser, no matter shielding layer 122 is to use a metal level to increase reflectivity or utilize high thermal conductance material to increase rate of heat dispation, the capital makes when the amorphous silicon membranes 116 in the first area 120 reach complete molten condition, and makes the amorphous silicon membranes 116 in the second area 130 still be in not fusion or partially molten state.Stop the irradiation of excimer laser subsequently, allow the amorphous silicon membrane 116 of fusion be recrystallised to a polysilicon membrane 124.
Generally speaking, employed excimer laser is generated by XeCl, ArF, KrF or XeF equimolecular, different molecules will produce different wavelength, and the power output of excimer laser and irradiation time can suitably be adjusted according to the thickness of amorphous silicon membrane 116, because the adjustment of this part technological parameter should be well known to those skilled in the art, so do not repeat them here.It should be noted that, the short-pulse laser (about 20 to 50ns) of employed in the methods of the invention excimer laser extensive use in including a prior art, other includes a long pulse cycle laser, its burst length is about 150 to 250ns, increasing the size of the crystal grain that formed, and then the element that increases the interior charge carrier rate travel of formed polysilicon membrane 124 and promote low-temperature polysilicon film transistor shows.
As shown in Figure 9, then carry out an etch process, be used for removing the shielding layer 122 that is positioned at display floater 110 surfaces, to form a polysilicon island (polysilicon island) structure, can continue to utilize the active region of this polysilicon island structure afterwards as a low-temperature polysilicon film transistor, carry out follow-up display floater and make, can finish easily owing to subsequent technique should be those skilled in the art, so also will not give unnecessary details at this.
From the above, method of the present invention is to utilize amorphous silicon membrane 116 to form alignment mark 118, thus can reduce one depositing operation and one photoetching process, and then shorten the process time and reduce manufacturing cost.
Please refer to Figure 10, Figure 10 is a method schematic diagram of making polysilicon membrane in the second embodiment of the invention with quasi-molecule laser annealing technology.The process of present embodiment is similar to first embodiment, institute's difference only is to carry out second photoetching and etch process with behind shielding layer 222 patternings, meeting elder generation formation one heat contains cover layer 223 and is covered on shielding layer 222 and the amorphous silicon membrane 216, afterwards just with excimer laser irradiation, make the amorphous silicon membranes 216 in the first area 220 be recrystallised to polysilicon membrane 224, remove shielding layer 222 with an etch process equally subsequently and heat contains cover layer 223.Wherein, to contain cover layer 222 be to include silica (SiO to heat
x), the combination of silicon nitride (SiN), silicon oxynitride (SiON) or above-mentioned material, can be used to reduce heat dissipation, so that the amorphous silicon membrane 216 of melting state can carry out crystallization again in higher ambient temperature in the first area 220, and then increase formed crystallite dimension.
Please refer to Figure 11, Figure 11 is a method schematic diagram of making polysilicon membrane in the third embodiment of the invention with quasi-molecule laser annealing technology.The technological principle of present embodiment is identical with aforementioned second embodiment, and institute's difference is in the present embodiment it is after formation heat contains cover layer 323 earlier, just to form shielding layer 322.Because shielding layer 122 and 222 all is directly to be formed on amorphous silicon membrane 11 6 and 226 in the previous embodiment, so in case the below of shielding layer is when adopting metal level or nitrogen silicon layer as main material, the phenomenon that formed polysilicon membrane suffers metallic pollution or stress to cause semiconductive thin film to peel off often easily takes place, therefore the third embodiment of the present invention can contain cover layer 323 and solves this problem by forming heat earlier, and then increases the reliability of product.
Form the process of carrying out amorphous silicon membrane behind the alignment mark again in the prior art earlier, the present invention integrates the patterning of amorphous silicon membrane with making alignment mark, so can significantly simplify technology, shorten process time and reduction manufacturing cost.In addition, disclose in addition in the embodiments of the invention and formed the polysilicon membrane manufacture method that a heat contains cover layer and uses a long pulse cycle laser a kind of including, except can further increasing the size of crystal grain in the formed amorphous silicon membrane, more can effectively solve in the prior art problems such as the metallic pollution that easily generates or semiconductive thin film peel off, with the electrical performance and the reliability of effective lift elements.
The above only is the preferred embodiments of the present invention, and all equalizations of doing according to claim of the present invention change and modify, and all should belong to the covering scope of patent of the present invention.
Claims (20)
1. one kind is utilized the excimer laser crystallization processes method of making a polysilicon membrane again, and this method includes the following step:
One substrate is provided, and this substrate surface definition has a first area, a second area around this first area, and one the 3rd zone;
Form an amorphous silicon membrane in this substrate top;
Carry out one first photoetching and etch process, remove this amorphous silicon membrane in the 3rd zone, and in the 3rd zone, form an alignment mark;
On this amorphous silicon membrane, form a shielding layer;
Carry out one second photoetching and etch process, remove this shielding layer in this this first area, amorphous silicon membrane top; And
Carry out this excimer laser crystallization processes again, make this amorphous silicon membrane in this first area recrystallize into a polysilicon membrane.
2. the method for claim 1, wherein this substrate surface includes a resilient coating in addition, and this amorphous silicon membrane is formed at this buffer-layer surface.
3. the method for claim 1, wherein this method will remove this shielding layer again after forming this polysilicon membrane.
4. the method for claim 1, wherein this polysilicon layer is used as the active region of a thin-film transistor.
5. the method for claim 1, wherein this alignment mark is used for increasing the alignment ability of subsequent technique.
6. the method for claim 1, wherein this shielding layer is to include silica layer (SiO
x), nitrogen silicon layer (SiN), metal level, silicon oxynitride (SiON) layer or the combination of above-mentioned material.
7. the method for claim 1, wherein this excimer laser again crystallization processes be to utilize an excimer laser to shine this amorphous silicon membrane, reach partially molten state so that be coated with interior this amorphous silicon membrane of this second area of this shielding layer, this amorphous silicon membrane reaches complete molten condition in this first area of this shielding layer and be not coated with, laterally long brilliant by the interface place of this first area and this second area again towards this first area, in this first area, to form a polysilicon membrane.
8. the method for claim 1 wherein includes a long pulse cycle laser in addition in this excimer laser.
9. method as claimed in claim 8, wherein the cycle of this long pulse cycle laser is about 150 to 250ns.
10. the method for claim 1, wherein this method is in carrying out this excimer laser again before the crystallization processes, and other forms a heat and contains cover layer and be covered on this shielding layer and this amorphous silicon membrane, to increase the grain size of formed this polysilicon membrane.
11. one kind is utilized the excimer laser crystallization processes method of making a polysilicon membrane again, this method includes the following step:
One substrate is provided, and this substrate surface and definition have a first area, a second area around this first area, and one the 3rd zone;
Form an amorphous silicon membrane in this substrate top;
Carry out one first photoetching and etch process, remove this amorphous silicon membrane in the 3rd zone, and in the 3rd zone, form an alignment mark;
Forming a heat contains cover layer and is covered on this amorphous silicon membrane and this resilient coating;
Contain formation one shielding layer on the cover layer in this heat;
Carry out one second photoetching and etch process, remove this shielding layer in this this first area, amorphous silicon membrane top; And
Carry out this excimer laser crystallization processes again, make this amorphous silicon membrane in this first area recrystallize into a polysilicon membrane.
12. method as claimed in claim 11, wherein this substrate surface includes a resilient coating in addition, and this amorphous silicon membrane is formed at this buffer-layer surface.
13. method as claimed in claim 11, wherein this method will remove this shielding layer and this heat contains cover layer again after forming this polysilicon membrane.
14. method as claimed in claim 11, wherein this polysilicon layer is used as the active region of a thin-film transistor.
15. method as claimed in claim 11, wherein this alignment mark is used to provide a mask alignment function, to increase the alignment ability of subsequent technique.
16. method as claimed in claim 11, wherein this shielding layer is to include silica layer (SiO
x), nitrogen silicon layer (SiN), metal level, silicon oxynitride (SiON) layer or the combination of above-mentioned material.
17. method as claimed in claim 11, wherein to contain cover layer be to include silica layer (SiO to this heat
x), nitrogen silicon layer (SiN), silicon oxynitride (SiON) layer or the combination of above-mentioned material.
18. method as claimed in claim 11, wherein this excimer laser again crystallization processes be to utilize an excimer laser to shine this amorphous silicon membrane, reach partially molten state so that be coated with interior this amorphous silicon membrane of this second area of this shielding layer, this amorphous silicon membrane reaches complete molten condition in this first area of this shielding layer and be not coated with, laterally long brilliant by the interface place of this first area and this second area again towards this first area, in this first area, to form a polysilicon membrane.
19. method as claimed in claim 11 wherein includes a long pulse cycle laser in addition in this excimer laser.
20. method as claimed in claim 19, wherein the cycle of this long pulse cycle laser is about 150 to 250ns.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2015096174A1 (en) * | 2013-12-25 | 2015-07-02 | 深圳市华星光电技术有限公司 | Low temperature polysilicon thin film and preparation method thereof, and transistor |
| CN107658365A (en) * | 2017-08-11 | 2018-02-02 | 西安科锐盛创新科技有限公司 | Horizontal PiNGe photodetectors based on LRC techniques and preparation method thereof |
-
2003
- 2003-06-04 CN CN 03141252 patent/CN1275291C/en not_active Expired - Lifetime
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2015096174A1 (en) * | 2013-12-25 | 2015-07-02 | 深圳市华星光电技术有限公司 | Low temperature polysilicon thin film and preparation method thereof, and transistor |
| GB2534771A (en) * | 2013-12-25 | 2016-08-03 | Shenzhen China Star Optoelect | Low temperature polysilicon thin film and preparation method thereof, and transistor |
| GB2534771B (en) * | 2013-12-25 | 2018-11-28 | Shenzhen China Star Optoelect | Low Temperature Poly-Silicon Thin Film, Method for Making The Thin Film, and Transistor Made from The Thin Film |
| CN107658365A (en) * | 2017-08-11 | 2018-02-02 | 西安科锐盛创新科技有限公司 | Horizontal PiNGe photodetectors based on LRC techniques and preparation method thereof |
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| Publication number | Publication date |
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| CN1275291C (en) | 2006-09-13 |
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