CN101170076B - Making method for organic EL part and image display system - Google Patents
Making method for organic EL part and image display system Download PDFInfo
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- CN101170076B CN101170076B CN2006101377373A CN200610137737A CN101170076B CN 101170076 B CN101170076 B CN 101170076B CN 2006101377373 A CN2006101377373 A CN 2006101377373A CN 200610137737 A CN200610137737 A CN 200610137737A CN 101170076 B CN101170076 B CN 101170076B
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Abstract
The invention relates to a method of manufacturing an organic electrization lighting component. The invention includes the steps of providing a base plate, including a first component area and a second component area; forming an amorphous silicon layer above the base plate; forming a protection film above the partial amorphous silicon layer in the second component area; performing excimer laser annealing process on the amorphous silicon layer, in order to convert the amorphous layer to a polycrystalline silicon layer; removing the protection film; patterning the amorphous silicon layer to form a first patterning polycrystalline silicon layer in the first component area and a second patterning polycrystalline silicon layer in the second component area, wherein, the grain size of the first patterning polycrystalline silicon layer is greater than the second patterning polycrystalline silicon layer, forming the organic electrization lighting component.
Description
Technical field
The present invention relates to a kind of image display system of manufacture method and this electroluminescence element of employing of electroluminescence element, and particularly relate to the image display system of a kind of method of manufacturing thin film transistor and this thin-film transistor of employing.
Background technology
Generally speaking, thin-film transistor mainly comprises amorphous silicon film transistor and polycrystalline SiTFT.The array base palte of existing electroluminescence element display (electroluminescent device display) can be divided into luminous zone and circuit region, and the manufacture method of array base palte mainly comprises: form thin-film transistor (thin film transistor; TFT), form pixel electrode and be formed with OLED.Wherein, the manufacturing process of thin-film transistor generally includes the following step: form resilient coating, polysilicon layer, gate insulator, grid, interlayer dielectric layer on the whole surface of substrate.After thin-film transistor is finished, then form pixel electrode, and this pixel electrode is with thin-film transistor and is electrically connected.Afterwards, on the luminous zone, form transparent anode, organic luminous layer and reflective negative electrode again, and finish the making of electroluminescence element.Usually, comprise quasi-molecule laser annealing (excimerlaser anneal in the polycrystalline SiTFT manufacturing process; ELA) step so that the amorphous silicon layer on the resilient coating is converted into polysilicon layer, and forms polycrystalline SiTFT.
Yet, because quasi-molecule laser annealing (excimer laser anneal; ELA) the produced thin-film transistor of step (for example, the thin-film transistor that is used to drive (driving TFT)) has very big electronics mobility (mobility) variability, therefore can cause the neither unanimity of luminosity of each sub-pixel, and produce the defective of irregular colour (Mura).
Therefore industry is needed a kind of electroluminescence element that can address the above problem badly.
Summary of the invention
In view of the above problems, several preferred embodiments of the present invention is by increasing the mode of diaphragm (protection film), to improve the excessive problem of electrical property difference between thin-film transistor.And, by increasing the mode of diaphragm, can use less passage length (channel length) and the raising aperture opening ratio.
The preferred embodiment of the present invention provides a kind of manufacture method of organic electroluminescent element, comprising: substrate is provided, and this substrate comprises first element area and second element area; Form amorphous silicon layer in this substrate top; Form this amorphous silicon layer top of the part of diaphragm in this second element area; This amorphous silicon layer is carried out quasi-molecule laser annealing technology, so that this amorphous silicon layer is converted into polysilicon layer; Remove this diaphragm; And this polysilicon layer of pattern, to form the first patterned polysilicon layer at this first element area, and form the second patterned polysilicon layer at this second element area, wherein the crystallite dimension of this first patterned polysilicon layer forms organic electroluminescent element by this greater than this second patterned polysilicon layer.
Another preferred embodiment of the present invention provides a kind of manufacture method of organic electroluminescent element, comprising: substrate is provided, and this substrate comprises first element area and second element area; Form first, second patterning amorphous silicon layer in this first, second element area top; Form diaphragm in this second patterning amorphous silicon layer top; And this first, second patterning amorphous silicon layer carried out quasi-molecule laser annealing technology, so that this first, second patterning amorphous silicon layer is converted into first, second patterned polysilicon layer, wherein the crystallite dimension of this first patterned polysilicon layer forms organic electroluminescent element by this greater than this second patterned polysilicon layer.
The another preferred embodiment of the present invention provides a kind of manufacture method of organic electroluminescent element, comprising: substrate is provided, and this substrate comprises first element area and second element area; Form the patterning diaphragm in this second element area top; Form amorphous silicon layer in this substrate and this patterning diaphragm top; This amorphous silicon layer is carried out quasi-molecule laser annealing technology, so that this amorphous silicon layer is converted into polysilicon layer; And this polysilicon layer patternization, to form the first patterned polysilicon layer at this first element area, and form the second patterned polysilicon layer at this second element area, wherein the crystallite dimension of this first patterned polysilicon layer forms organic electroluminescent element by this greater than this second patterned polysilicon layer.
The present invention also provides a kind of image display system, comprising: organic electroluminescent element comprises: the top has the substrate of pixel region, and wherein this pixel region comprises pixel a plurality of times, and each time pixel comprises: switch region and driving district; Switching thin-film transistor places this switch region; And drive thin film transistors; place this driving district; and comprise grid at least, be positioned at the polysilicon layer of this grid below and be positioned at the patterning diaphragm of this polysilicon layer below that wherein this patterning diaphragm is a metal level and between this polysilicon layer and this substrate.
In sum, the method for the preferred embodiment of the present invention can be improved excessive problem, the raising aperture opening ratio of electrical property difference between thin-film transistor, and can not increase the complexity of technology.
Description of drawings
Fig. 1 is the equivalent circuit diagram that illustrates a pixel in the active matrix type organic electroluminescent element.
Fig. 2 a～2f is the profile that illustrates the manufacture method of organic electroluminescent element in the preferred embodiment of the present invention.
Fig. 3 a～3f is the profile that illustrates the manufacture method of organic electroluminescent element in another preferred embodiment of the present invention.
Fig. 4 a～4g is the profile that illustrates the manufacture method of organic electroluminescent element in the another preferred embodiment of the present invention.
Fig. 5 a～5g is the profile that illustrates the manufacture method of organic electroluminescent element in the another preferred embodiment of the present invention.
Fig. 6 illustrates the system that is used for show image in the preferred embodiment of the present invention.
The simple symbol explanation
I～switching thin-film transistor zone; II～drive thin film transistors zone; 100～pixel; 102～switching thin-film transistor; 104～drive thin film transistors; 106～Organic Light Emitting Diode; 108～data wire; 110～scan line; 112～storage capacitors; 200～substrate; 202～resilient coating; 204～amorphous silicon layer; 204a～polysilicon layer; 204b～polysilicon layer; 204c～channel region; 204d～source/drain electrode; 204 ' b～first active layer; 204 ' c～channel region; 204 ' d～lightly doped drain; 204 ' e～source/drain electrode; 206～diaphragm; 208～quasi-molecule laser annealing technology; 210～gate dielectric; 212～grid; 214～grid; 216～interlayer dielectric layer; 218～lead; 220～protective layer; 224～transparency electrode; 300～substrate; 302～resilient coating; 304～amorphous silicon layer; 304a～patterning amorphous silicon layer; 304b～patterning amorphous silicon layer; 304c～polysilicon layer; 304d～polysilicon layer; 304 ' a～channel region; 304 ' b～lightly doped drain; 304 ' c～source/drain electrode; 304 ' d～channel region; 304 ' e～source/drain electrode; 306～diaphragm; 308～quasi-molecule laser annealing technology; 309～gate dielectric; 310～grid; 312～grid; 314～interlayer dielectric layer; 316～lead; 318～protective layer; 322～transparency electrode; 400～substrate; 402～patterning diaphragm; 404～resilient coating; 406～amorphous silicon layer; 406a～polysilicon layer; 406c～channel region; 406 ' a～patterned polysilicon layer; 406 ' b～lightly doped drain; 406 ' c～source/drain electrode; 406 ' d～channel region; 406b～patterned polysilicon layer; 406d～source/drain electrode; 408～quasi-molecule laser annealing technology; 410～gate dielectric; 412～grid; 414～grid; 416～interlayer dielectric layer; 418～lead; 420～protective layer; 424～transparency electrode; 500～substrate; 502～patterning diaphragm; 504～resilient coating; 506～amorphous silicon layer; 506a～polysilicon layer; 506c～channel region; 506 ' a, 506b～patterned polysilicon layer; 506 ' b～lightly doped drain; 506 ' c～source/drain electrode; 506 ' d～channel region; 506b～patterned polysilicon layer; 506d～source/drain electrode; 508～quasi-molecule laser annealing technology; 510～gate dielectric; 512～grid; 514～grid; 516～interlayer dielectric layer; 518～lead; 520～protective layer; 524～transparency electrode; 600～electronic component; 610～organic electroluminescent element; 620～display floater; 630～controller; 640～flat panel element; 650～input element; 2000～organic electroluminescent element; 3000～organic electroluminescent element; 4000～organic electroluminescent element.
Embodiment
Fig. 1 is the equivalent circuit diagram that illustrates a pixel in the active matrix type organic electroluminescent element.It should be noted that each " pixel " of indication comprises a switching thin-film transistor (switching thin film transistor) and drive thin film transistors (driving thin film transistor) in specification
As shown in Figure 1, in comprising the pixel region (not shown) of a plurality of pixels, pixel 100 comprises switching thin-film transistor 102, drive thin film transistors 104, Organic Light Emitting Diode 106, data wire 108, scan line 110 and storage capacitors 112.Organic Light Emitting Diode 106 also comprises anode, electroluminescence layer and negative electrode (not shown).It should be noted that switching thin-film transistor 102 and drive thin film transistors 104 are formed in the same pixel.
The 1st embodiment
Fig. 2 a～2f is the profile that illustrates the manufacture method of organic electroluminescent element in the preferred embodiment of the present invention.
Shown in Fig. 2 a; (for example comprising first element area; switching thin-film transistor (switchingthin film transistor) area I) with on the substrate 200 of second element area (for example, drive thin film transistors (drivingthin film transistor) area I I) form resilient coating 202, amorphous silicon layer 204 and diaphragm 206 successively.Wherein, diaphragm 206 is formed at portion of amorphous silicon layer 204 top in the second element area II; And diaphragm 206 comprises with silicon being the material of base material, for example is the laminated construction of silica (SiOx), silicon nitride (SiNx), silicon oxynitride (SiOxNy) or silica and silicon nitride.
Shown in Fig. 2 b, amorphous silicon layer 204 is carried out quasi-molecule laser annealing technology 208, with this amorphous silicon layer is converted into polysilicon layer (204a, 204b); But, in quasi-molecule laser annealing technology 208, because the cause that diaphragm 206 can the reflecting part laser energy, so cause part polysilicon layer 204a to have different crystallization effects with part polysilicon layer 204b.That is to say, because the part polysilicon layer 204b that not protected film 206 covers directly is subjected to the cause of complete excimer laser energy exposure, thus have the crystal grain (grain) of large-size, and its electron mobility is approximately 100cm
2/ V-s.On the other hand, because the cause of diaphragm 206 reflecting part laser energies, thereby the crystallite dimension of the polysilicon layer 204a of below is less, but crystal grain homogeneity (uniformity) but increases, and its electron mobility is approximately less than 100cm
2/ V-s.
Shown in Fig. 2 c, remove diaphragm 206.Then, shown in Fig. 2 d, (204a 204b), and forms first active layer, 204 ' b that is positioned at the switching thin-film transistor area I and the second active layer 204a that is positioned at drive thin film transistors area I I to the pattern polysilicon layer.
Shown in Fig. 2 e, form gate dielectric 210, to cover patterned polysilicon layer and resilient coatings 202 such as first active layer, the 204 ' b and the second active layer 204a.
Then, shown in Fig. 2 f, carry out subsequent technique successively, to form grid (212,214), interlayer dielectric layer 216, lead 218, cover layer 220, to reach transparency electrode (pixel electrode) 224, because this part is not an emphasis of the present invention, in this description will be omitted.At last, finish organic electroluminescent element 2000, comprise switching thin-film transistor and drive thin film transistors.Above-mentioned switching thin-film transistor comprises grid 212, gate dielectric 210 and first active layer, 204 ' b; In addition, above-mentioned drive thin film transistors comprises grid 214, gate dielectric 210 and the second active layer 204a.Wherein, first active layer, 204 ' b comprises channel region 204 ' c, lightly doped drain (lightly doped drain) 204 ' d, source/drain electrode 204 ' e; The second active layer 204a comprises channel region 204c and source/drain electrode 204d.
The 2nd embodiment
Fig. 3 a～3f is the profile that illustrates the manufacture method of organic electroluminescent element in another preferred embodiment of the present invention.
Shown in Fig. 3 a, on the substrate 300 that comprises switching thin-film transistor (switching thin film transistor) area I and drive thin film transistors (driving thin film transistor) area I I, form resilient coating 302 and amorphous silicon layer 304 successively.
Shown in Fig. 3 b, with amorphous silicon layer 304 patternings, the patterning amorphous silicon layer 304a that is positioned at the patterning amorphous silicon layer 304b of switching thin-film transistor area I and is positioned at drive thin film transistors area I I with formation.
Shown in Fig. 3 c, form the diaphragm 306 on overlay pattern amorphous silicon layer 304a and partial buffer layer 302 surface.Said protection film 306 comprises with silicon being the material of base material, for example is the laminated construction of silica (SiOx), silicon nitride (SiNx), silicon oxynitride (SiOxNy) or silica and silicon nitride.
Shown in Fig. 3 d, carry out quasi-molecule laser annealing technology 308, so that patterning amorphous silicon layer 304a and 304b are converted into polysilicon layer 304c and 304d.Wherein, be positioned at first active layer of the polysilicon layer 304d of switching thin-film transistor area I as the switching thin-film transistor of follow-up formation, the polysilicon layer 304c that is positioned at drive thin film transistors area I I is then as second active layer of the drive thin film transistors of follow-up formation.But, in quasi-molecule laser annealing technology 308, because the cause that diaphragm 306 can the reflecting part laser energy, so cause polysilicon layer 304c to have different crystallization effects with polysilicon layer 304d.In other words, because the polysilicon layer 304b that not protected film 306 covers directly is subjected to the cause of complete excimer laser energy exposure, thus have the crystal grain (grain) of large-size, and its electron mobility is approximately 100cm
2/ V-s.On the other hand, because the cause of diaphragm 306 reflecting part laser energies, thereby the crystallite dimension of the polysilicon layer 304c of below is less, but crystal grain homogeneity (uniformity) but increases, and its electron mobility is approximately less than 100cm
2/ V-s.
Shown in Fig. 3 e, form gate dielectric 309, to cover patterned polysilicon layer and resilient coatings 302 such as first active layer and second active layer.
Then, shown in Fig. 3 f, carry out subsequent technique successively, to form grid (310,312), interlayer dielectric layer 314, lead 316, cover layer 318, to reach transparency electrode (pixel electrode) 322, because this part is not an emphasis of the present invention, in this description will be omitted.At last, finish organic electroluminescent element 3000, comprise switching thin-film transistor and drive thin film transistors.Above-mentioned switching thin-film transistor comprises grid 310, gate dielectric 309 and first active layer; In addition, above-mentioned drive thin film transistors comprises grid 312, gate dielectric 309 and second active layer.Wherein, first active layer comprises channel region 304 ' a, lightly doped drain (lightly doped drain) 304 ' b, source/drain electrode 304 ' c; Second active layer comprises channel region 304 ' d and source/drain electrode 304 ' e.
The 3rd embodiment
Fig. 4 a～4g is the profile that illustrates the manufacture method of organic electroluminescent element in the another preferred embodiment of the present invention.
Shown in Fig. 4 a, on the substrate 400 that comprises switching thin-film transistor (switching thin film transistor) area I and drive thin film transistors (driving thin film transistor) area I I, form patterning diaphragm 402.Above-mentioned patterning diaphragm is positioned at drive thin film transistors area I I.The material of above-mentioned patterning diaphragm 402 comprises silica (SiOx), silicon nitride (SiNx), silicon oxynitride (SiOxNy) or its laminated construction.
Shown in Fig. 4 b, form resilient coating 404 in patterning diaphragm 402 and substrate 400 tops.Then, form amorphous silicon layer 406 in resilient coating 404 tops, shown in Fig. 4 c.
Shown in Fig. 4 d, amorphous silicon layer 406 is carried out quasi-molecule laser annealing technology 408, with amorphous silicon layer 406 is converted into polysilicon layer (406a, 406b).
Shown in Fig. 4 e, with polysilicon layer (406a, 406b) patterning, and formation patterned polysilicon layer 406 ' a and 406b.Wherein, be positioned at first active layer of the polysilicon layer 406 ' a of switching thin-film transistor area I as the switching thin-film transistor of follow-up formation, the polysilicon layer 406b that is positioned at drive thin film transistors area I I is then as second active layer of the drive thin film transistors of follow-up formation.But, in quasi-molecule laser annealing technology 408, because the cause that patterning diaphragm 402 can the reflecting part laser energy, so cause patterned polysilicon layer 406 ' a to have different crystallization effects with 406b.In other words, because patterned polysilicon layer 406 ' a directly is subjected to the cause of excimer laser energy exposure, thus have the crystal grain (grain) of large-size, and its electron mobility is approximately 100cm
2/ V-s.On the other hand, because the cause of patterning diaphragm 402 absorption portion laser energies, thereby the crystallite dimension of the patterned polysilicon layer 406 ' a of top is less, but crystal grain homogeneity (uniformity) but increases, and its electron mobility is approximately less than 100cm
2/ V-s.
Shown in Fig. 4 f, form gate dielectric 410, to cover patterned polysilicon layer and resilient coatings 402 such as first active layer and second active layer.
Then, shown in Fig. 4 g, carry out subsequent technique successively, to form grid (412,414), interlayer dielectric layer 416, lead 418, cover layer 420, to reach transparency electrode (pixel electrode) 424, because this part is not an emphasis of the present invention, in this description will be omitted.At last, finish organic electroluminescent element 4000, comprise switching thin-film transistor and drive thin film transistors.Above-mentioned switching thin-film transistor comprises grid 412, gate dielectric 410 and first active layer; In addition, above-mentioned drive thin film transistors comprises grid 414, gate dielectric 410 and second active layer.Wherein, first active layer comprises channel region 406 ' d, lightly doped drain (lightly doped drain) 406 ' b, source/drain electrode 406 ' c; Second active layer comprises channel region 406c and source/drain electrode 406d.
The 4th embodiment
Fig. 5 a～5g is the profile that illustrates the manufacture method of organic electroluminescent element in the another preferred embodiment of the present invention.
Shown in Fig. 5 a, on the substrate 500 that comprises switching thin-film transistor (switching thin film transistor) area I and drive thin film transistors (driving thin film transistor) area I I, form patterning diaphragm 502.Above-mentioned patterning diaphragm is positioned at drive thin film transistors area I I.Above-mentioned patterning diaphragm 502 comprises any metal material.
Shown in Fig. 5 b, form resilient coating 504 in patterning diaphragm 502 and substrate 500 tops.Then, form amorphous silicon layer 506 in resilient coating 504 tops, shown in Fig. 5 c.
Shown in Fig. 5 d, amorphous silicon layer 506 is carried out quasi-molecule laser annealing technology 508, with amorphous silicon layer 506 is converted into polysilicon layer (506a, 506b).
Shown in Fig. 5 e, with polysilicon layer (506a, 506b) patterning, and formation patterned polysilicon layer 506 ' a and 506b.Wherein, be positioned at first active layer of the polysilicon layer 506 ' a of switching thin-film transistor area I as the switching thin-film transistor of follow-up formation, the polysilicon layer 506b that is positioned at drive thin film transistors area I I is then as second active layer of the drive thin film transistors of follow-up formation.But, in quasi-molecule laser annealing technology 508, because the patterning diaphragm 502 heat radiations cause fast than other parts, so cause patterned polysilicon layer 506 ' a to have different crystallization effects with 506b.In other words, because patterned polysilicon layer 506 ' a directly is subjected to the cause of complete excimer laser energy exposure, thus have the crystal grain (grain) of large-size, and its electron mobility is approximately 100cm
2/ V-s.On the other hand, the crystallite dimension of the patterned polysilicon layer 506 ' a of patterning diaphragm 502 tops is less, but crystal grain homogeneity (uniformity) but increases, and its electron mobility is approximately less than 100cm
2/ V-s.
Shown in Fig. 5 f, form gate dielectric 510, to cover patterned polysilicon layer and resilient coatings 502 such as first active layer and second active layer.
Then, shown in Fig. 5 g, carry out subsequent technique successively, to form grid (512,514), interlayer dielectric layer 516, lead 518, cover layer 520, to reach transparency electrode (pixel electrode) 524, because this part is not an emphasis of the present invention, in this description will be omitted.At last, finish organic electroluminescent element 5000, comprise switching thin-film transistor and drive thin film transistors.Above-mentioned switching thin-film transistor comprises grid 512, gate dielectric 510 and first active layer; In addition, above-mentioned drive thin film transistors comprises grid 514, gate dielectric 510 and second active layer.Wherein, first active layer comprises channel region 506 ' d, lightly doped drain (lightly doped drain) 506 ' b, source/drain electrode 506 ' c; Second active layer comprises channel region 506c and source/drain electrode 506d.
Fig. 6 illustrates the system that is used for show image in the preferred embodiment of the present invention.At this, this system is can be display floater 620, flat panel element 640 or electronic component 600.Above-mentioned organic electroluminescent element can be assemblied in display floater and make organic electric exciting light-emitting diode panel.As shown in Figure 6, display floater 620 comprises organic electroluminescent element 610, for example the organic electroluminescent element 2000,3000 and 4000 shown in Fig. 2 f, 3f and the 4g difference.In other embodiments, flat panel element 640 can be made of display floater 620 and controller 630.In other embodiments, display floater 620 also can constitute the part (being electronic component 600 at this for example) of numerous electronic components.Generally speaking, electronic component 600 can comprise flat panel element 640, and flat panel element 640 has display floater 620, controller 630 and input element 650.And input element 650 couples with flat panel element 640, and provide input signal (for example, signal of video signal) to display floater 620 to produce image.Electronic component 600 can be mobile phone, digital camera, personal digital assistant (personal digitalassistant; PDA), display or Portable DVD player on notebook, desktop computer, TV, the car.
In sum, several preferred embodiments of the present invention is by quasi-molecule laser annealing (excimer laseranneal; ELA) step; on the resilient coating or down or on gate insulator, increase extra diaphragm or metal film, cause thin-film transistor (switching TFT) that is used for switch and the thin-film transistor that is used to drive (driving TFT) to have different crystallization effects.As a result, the active array type organic electroluminescent element with thin-film transistor of above-mentioned different crystallization effect then has drive current uniformly, and avoids producing the defective of irregular colour (Mura).
Claims (14)
1. the manufacture method of an organic electroluminescent element comprises:
Substrate is provided, and this substrate comprises the pixel region that contains a plurality of pixels, wherein comprises first element area and second element area in each pixel;
Form amorphous silicon layer in this substrate top;
Form this amorphous silicon layer top of the part of diaphragm in this second element area, this diaphragm is in order to the reflecting part laser energy;
This amorphous silicon layer is carried out quasi-molecule laser annealing technology, and laser is from this diaphragm one side irradiation of this amorphous silicon layer, to incite somebody to action
This amorphous silicon layer is converted into polysilicon layer; And
This polysilicon layer of patterning, to form the first patterned polysilicon layer at this first element area, and form the second patterned polysilicon layer at this second element area, wherein the crystallite dimension of this first patterned polysilicon layer forms organic electroluminescent element by this greater than this second patterned polysilicon layer.
2. the manufacture method of organic electroluminescent element as claimed in claim 1, wherein this diaphragm comprises with silicon being the material of base material.
3. the manufacture method of organic electroluminescent element as claimed in claim 1 also comprises:
After the step of this this polysilicon layer of patterning, form gate dielectric, to cover this patterned polysilicon layer.
4. the manufacture method of organic electroluminescent element as claimed in claim 1, the first patterned polysilicon layer that wherein is positioned at this first element area is first active layer, the second patterned polysilicon layer that is positioned at this second element area is second active layer.
5. the manufacture method of organic electroluminescent element as claimed in claim 1 wherein forms the switching thin-film transistor element, and forms the drive thin film transistors element in this second element area in this first element area.
6. the manufacture method of organic electroluminescent element as claimed in claim 5 also comprises:
One Organic Light Emitting Diode, wherein this Organic Light Emitting Diode forms with this drive thin film transistors element and is electrically connected.
7. the manufacture method of organic electroluminescent element as claimed in claim 1 wherein removes this diaphragm after quasi-molecule laser annealing technology.
8. the manufacture method of organic electroluminescent element as claimed in claim 1 wherein forms first, second patterning amorphous silicon layer earlier above this first, second element area with this amorphous silicon layer patterning after the step above this amorphous silicon layer is formed at this substrate immediately.
9. the manufacture method of organic electroluminescent element as claimed in claim 8, wherein this diaphragm comprises with silicon being the material of base material.
10. the manufacture method of organic electroluminescent element as claimed in claim 8, wherein in this quasi-molecule laser annealing technology, this diaphragm can the reflecting part laser energy.
11. the manufacture method of organic electroluminescent element as claimed in claim 8 also comprises:
After this quasi-molecule laser annealing technology, form gate dielectric, cover polysilicon layer, substrate and this diaphragm that this not protected film covers.
12. the manufacture method of organic electroluminescent element as claimed in claim 8, wherein this first, second patterned polysilicon layer is respectively first active layer that is positioned at this first element area and second active layer that is positioned at this second element area.
13. the manufacture method of organic electroluminescent element as claimed in claim 8 wherein forms the switching thin-film transistor element, and forms the drive thin film transistors element in this second element area in this first element area.
14. the manufacture method of organic electroluminescent element as claimed in claim 13 also comprises:
Organic Light Emitting Diode, wherein this Organic Light Emitting Diode forms with this drive thin film transistors element and is electrically connected.
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| CN201110067501.8A CN102157444B (en) | 2006-10-27 | 2006-10-27 | The manufacture method of organic electroluminescent element and image display system |
| CN2006101377373A CN101170076B (en) | 2006-10-27 | 2006-10-27 | Making method for organic EL part and image display system |
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| CN101834189B (en) * | 2009-03-11 | 2015-07-08 | 统宝光电股份有限公司 | Image display system |
| CN105097667B (en) * | 2015-06-24 | 2018-03-30 | 深圳市华星光电技术有限公司 | The preparation method and low temperature polycrystalline silicon TFT substrate structure of low temperature polycrystalline silicon TFT substrate structure |
| CN105206569A (en) * | 2015-10-23 | 2015-12-30 | 京东方科技集团股份有限公司 | Array substrate, manufacturing method thereof, display panel and display device |
| CN105514035B (en) | 2016-01-21 | 2018-11-20 | 武汉华星光电技术有限公司 | The production method and low temperature polycrystalline silicon TFT substrate of low temperature polycrystalline silicon TFT substrate |
| CN106847825A (en) * | 2017-02-09 | 2017-06-13 | 京东方科技集团股份有限公司 | A kind of display base plate, semiconductor devices and preparation method thereof, display device |
| CN108598040B (en) | 2017-03-10 | 2021-03-16 | 京东方科技集团股份有限公司 | Array substrate and manufacturing method thereof, driving transistor and display panel |
| CN107863355B (en) * | 2017-10-26 | 2022-01-25 | 上海中航光电子有限公司 | Display substrate, display device and manufacturing method of display substrate |
| CN111668237B (en) | 2020-06-17 | 2024-01-26 | 京东方科技集团股份有限公司 | Display substrate, preparation method thereof, driving method thereof and display device |
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| CN1656602A (en) * | 2002-05-22 | 2005-08-17 | 皇家飞利浦电子股份有限公司 | Active matrix display devices and the manufacture thereof |
| CN1501449A (en) * | 2002-11-12 | 2004-06-02 | 友达光电股份有限公司 | Method for making polysilicon layer |
| CN1622718A (en) * | 2004-12-15 | 2005-06-01 | 友达光电股份有限公司 | Method of selective laser crystallization and display panel manufactured by same method |
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| CN101170076A (en) | 2008-04-30 |
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