CN1275301C - Process for preparing polysilicon film using quasi-molecule laser annealing technology - Google Patents
Process for preparing polysilicon film using quasi-molecule laser annealing technology Download PDFInfo
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- CN1275301C CN1275301C CN 02150450 CN02150450A CN1275301C CN 1275301 C CN1275301 C CN 1275301C CN 02150450 CN02150450 CN 02150450 CN 02150450 A CN02150450 A CN 02150450A CN 1275301 C CN1275301 C CN 1275301C
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Abstract
The present invention relates to a method for making polysilicon films by using quasi-molecule laser annealing technique, which comprises the following steps: firstly, an amorphous silicon film is formed on an underlay, wherein the amorphous silicon film has a first thickness in a first area adjacent to the center and has a sloped sidewall structure in a second area adjacent to the outer edge; then the thickness of the amorphous silicon film is measured to obtain the thickness distribution in the position adjacent to the outer edge of the amorphous silicon film and set a technique boundary of the quasi-molecule laser annealing technique; then the quasi-molecule laser annealing technique is carried out to the area in the technique boundary to make the amorphous silicon film in the area to recrystallize and form a polysilicon film. The amorphous silicon film has a second thickness which is smaller than the first thickness in the position of the technique boundary, and the second thickness is larger than a critical thickness of the quasi-molecule laser annealing technique so as to avoid the ablation phenomenon of the amorphous silicon film in the annealing technique.
Description
Technical field
The present invention relates to a kind of manufacture method of polysilicon membrane, relate in particular to a kind of quasi-molecule laser annealing (excimer laser annealing, ELA) manufacture method of technology making polysilicon membrane utilized.
Background technology
Along with making rapid progress of science and technology, frivolous, power saving, portable intelligent information products have been full of our living space, display has been played the part of considerable role betwixt, no matter be mobile phone, personal digital assistant or notebook computer, all need the interface of display as man-machine communication.Yet mass-produced now amorphous silicon film transistor LCD (a-TFT LCD), because the restriction of carrier mobility, the demand that will further reach frivolous, power saving, high image quality is difficulty to some extent, get and with will be low temperature polycrystalline silicon (low temperature polysilicon, LTPS) Thin Film Transistor-LCD.
In LCD, because the heat resistance of general glass substrate often can only arrive 600 ℃, therefore if at high temperature directly make the torsional deformation that polysilicon membrane will cause glass substrate, therefore traditional polycrystalline SiTFT LCD often must use expensive quartz as base material, and range of application often also can only be confined to undersized liquid crystal panel.Therefore, at present another kind utilize amorphous silicon membrane again the making method for low-temperature multi-crystal silicon film of crystallization become main flow gradually, wherein, (excimer laser annealing, ELA) technology especially comes into one's own with quasi-molecule laser annealing again.
In the quasi-molecule laser annealing process, amorphous silicon membrane can be via reaching fusion fast and crystallization again to the absorption of laser deep UV (ultraviolet light), and the fast Absorption that adopts this short time pulse laser to be caused only can impact the amorphous silicon membrane surface.Therefore glass substrate can remain on low-temperature condition and unlikely being affected.Generally speaking, excimer laser kind commonly used includes XeCl laser, ArF laser, KrF laser and XeF laser etc., different molecules can produce different wavelength, the energy density of being exported then can be according to the thickness adjustment of amorphous silicon membrane, amorphous silicon membrane with thickness 500 dusts is an example, and the energy density of excimer laser output is about 200 to 400mJ/cm
2
Please refer to Fig. 1, Fig. 1 is a method schematic diagram of making polysilicon membrane with quasi-molecule laser annealing technology.As shown in Figure 1, at first on a glass substrate 10, deposit the amorphous silicon membrane 12 that a thickness is about 500 dusts (), the method of deposition of amorphous silicon films 12 has many kinds, such as low-pressure chemical vapor deposition (LPCVD), plasma auxiliary chemical vapor deposition (PECVD) and sputter (sputtering) etc.
Then glass substrate 10 can be inserted in the airtight reative cell, to carry out quasi-molecule laser annealing technology, wherein this reative cell top has a transparent window, excimer laser can expose to the amorphous silicon membrane 12 of glass substrate 10 tops from this transparent window, and according to a predefined processing range with the All Ranges in progressively inswept this processing range of a kind of mode of similar scanning, amorphous silicon membrane in this processing range 12 is carried out Fast Heating, make two kinds of zones of the warm complete fusion of generating unit fractional melting on the amorphous silicon membrane 12 in this zone, the temperature gradient that causes by this two zone then, the residual solid of not finishing fusion with boundary is as the nucleation basic point, moment begins to do toward the zone of fusion fully the growth of side direction crystal grain, to recrystallize into a polysilicon membrane.Can further carry out the technology of follow-up display panels afterwards, and utilize this polysilicon membrane, to constitute the drive circuit in the panel of LCD as source electrode in the LCD or drain electrode.
Yet when forming amorphous silicon membrane 12, the thickness of each area deposition is also unequal, and deviation slightly.See also Fig. 2, Fig. 2 is the partial cutaway schematic at close glass substrate 10 outer rim places among Fig. 1.As shown in Figure 2, amorphous silicon membrane 12 includes a first area 14 and a second area 16.Wherein can maintain a predetermined thickness mostly by amorphous silicon membrane 12 thickness in the first area 14 of central authorities, the 500 Izod right sides for example, its error 5 in 10%, and at the second area 16 near amorphous silicon membrane 12 outer rims, because be subjected to the influence of depositing operation, the structure that can have a sloped sidewall, its thickness is successively decreased to the outer rim place by the center.
And when setting the processing range of excimer laser technology, the very important point is exactly that the interior amorphous silicon membrane 12 of this processing range must have enough thickness, if amorphous silicon membrane 12 thickness of a certain location are too small in this processing range, then in process with the excimer laser Fast Heating, the amorphous silicon membrane 12 of this location is understood the phenomenon of ablate (ablation), and when this phenomenon takes place, the amorphous silicon membrane of these ablations can be in a kind of mode of similar evaporation attached on the workbench, the transparent window of laser input for example, therefore cause the pollution of whole workbench, have a strong impact on subsequent technique.
In the prior art, for fear of taking place, this workbench pollution problems takes place, often processing range can not contained all amorphous silicon membranes 12, and can be as shown in Figure 3, a safe distance L1 is slightly moved toward the center position of amorphous silicon membrane 12 in technology border 18, for example 3 to 5 centimeters, to solve this problem.Yet choosing of the setting on this technology border 18 and safe distance L1 is to be judged voluntarily according to the personal experience by the operator fully, therefore tend to produce many problems, for example in order to increase output, safe distance L1 stays too smallly, the risk that causes board to be polluted also heightens or safe distance L1 stays too much, make processing range too small, and output is impacted.
Summary of the invention
Main purpose of the present invention is to provide a kind of technology border establishing method when utilizing quasi-molecule laser annealing technology to make polysilicon membrane, to address the above problem.
The invention provides a kind of method of utilizing quasi-molecule laser annealing technology to make polysilicon membrane.At first form an amorphous silicon membrane on a substrate, wherein the center of this amorphous silicon membrane has one first thickness, and this amorphous silicon membrane outer rim place has sloped sidewall structure.Then this amorphous silicon membrane is carried out thickness measure, obtaining this amorphous silicon membrane, and set the technology border of this quasi-molecule laser annealing technology according to this near the thickness distribution at outer rim place.Carry out this quasi-molecule laser annealing technology again, with inswept this technology border region surrounded of excimer laser, so that this amorphous silicon membrane on should the zone recrystallizes into a polysilicon membrane.Wherein the amorphous silicon membrane of this technology boundary has second thickness less than this first thickness, and this bound thickness produces ablation phenomen (ablation) greater than a critical thickness (critical thickness) of this quasi-molecule laser annealing technology to avoid this amorphous silicon membrane in this annealing process.
According to the present invention, a kind of method of utilizing quasi-molecule laser annealing technology to make polysilicon membrane is provided, this method includes the following step: a substrate is provided; On this substrate, form an amorphous silicon membrane; Measure the thickness of this amorphous silicon membrane, be positioned at the center of this amorphous silicon membrane with definition one first area on this amorphous silicon membrane, and one second area be positioned at the outer rim of this amorphous silicon membrane, wherein this amorphous silicon membrane in this first area has one first thickness, and this amorphous silicon membrane in this second area has sloped sidewall structure, and this sloped sidewall structure has a thickness distribution; Set a technology border of this quasi-molecule laser annealing technology according to this amorphous silicon membrane in the thickness distribution at this sloped sidewall structure place in this second area, wherein the non-product silicon thin film of this of this technology boundary has second thickness less than this first thickness; And the processing range that this technology border is centered on carries out this quasi-molecule laser annealing technology, so that this amorphous silicon membrane of being located in this technology border recrystallizes into a polysilicon membrane.
The present invention defines the processing range of excimer laser according to amorphous silicon membrane near the thickness distribution at outer rim place, so the generation that not only can avoid workbench to pollute, and can increase the technology area, production capacity is improved have obvious effect.
Description of drawings
Fig. 1 is a method schematic diagram of making polysilicon membrane in the prior art with quasi-molecule laser annealing technology;
Fig. 2 is the partial cutaway schematic at close glass substrate outer rim place among Fig. 1;
Fig. 3 is the schematic diagram of definition process scope in the prior art; And
Fig. 4 and Fig. 5 make the method schematic diagram of polysilicon membrane with quasi-molecule laser annealing technology for the present invention.
Description of reference numerals in the accompanying drawing is as follows:
10 substrates, 12 amorphous silicon membranes
14 first areas, 16 second areas
18 technology borders, 110 substrates
112 polysilicon membranes, 114 first areas
116 second areas
Embodiment
Please refer to Fig. 4, Fig. 4 is for making the method schematic diagram of polysilicon membrane with quasi-molecule laser annealing technology among the present invention.As shown in Figure 4, at first on a glass substrate 110, deposit an amorphous silicon membrane 112, the method of deposition of amorphous silicon films 112 has many kinds, such as low-pressure chemical vapor deposition (LPCVD), plasma auxiliary chemical vapor deposition (PECVD) and sputter (sputtering) etc.Wherein the area of the amorphous silicon membrane that forms 112 and thickness there is no particular restriction, can suitably adjust according to the demand of product, generally speaking, its thickness is greatly about 300 to the 800 Izod right sides, and in a preferred embodiment of the invention, formed amorphous silicon membrane 112 length are 750mm, and width is 620mm, and thickness is about 500 dusts ().
Then amorphous silicon membrane 112 is carried out the measurement of a thickness, to obtain the thickness distribution of amorphous silicon membrane 112 near the outer rim place.Please refer to Fig. 5, Fig. 5 is the thickness distribution schematic diagram of amorphous silicon membrane 112 among the present invention.Wherein the X-axis representative is apart from the distance of substrate 110 outer rims, and Y-axis is then represented the thickness at this place.Curve A then is the thickness distribution of amorphous silicon membrane 112 near the outer rim place, and straight line B is not then for the minimum thickness of ablation phenomen can take place.Wherein, this minimum thickness can get by experiment test.In addition, under the situation of process stabilizing,, and do not need each plate base 110 is carried out the thickness measure and the test of non-polysilicon membrane 112 no matter the measurement of thickness distribution or the experiment test of minimum thickness only need to select a test piece in every batch and get final product.
As shown in Figure 5, the confluce of curve A and straight line B is permissible technology boundary Limit, if the technology border is moved towards glass substrate 110 outer rim directions, then the phenomenon that can ablate causes the pollution of workbench again.When actual set technology border,, still the technology border can be set in the right sides of curve A and straight line B confluce mostly, shown in dotted line C among Fig. 5 in order to reduce the risk that pollution takes place board.Is example with dotted line C as the technology border, amorphous silicon membrane 112 thickness at this place are about 450 dusts, 90% of about slightly central first area 114 place's thickness, compared with prior art, technology of the present invention border around all than existing each many 5-20mm of technology border, therefore, can increase the processing range of rough lifting 5 to 10%.
Subsequently can be according to the technology border that sets, the processing range that this technology border is centered on carries out quasi-molecule laser annealing technology, it is a polysilicon membrane that the interior amorphous silicon membrane 112 of this processing range is recrystallized into, its make principle and process same as the prior art, state so will not sew at this.After the making of finishing polysilicon membrane, can proceed subsequent technique, utilize this polysilicon membrane as source/drain electrode, carry out the making of drive circuit in the display panels.
The present invention earlier carries out the measurement of thickness to amorphous silicon membrane, obtaining the thickness distribution at amorphous silicon membrane outer rim place, and utilizes some experiment tests, draws the minimum thickness of the required amorphous silicon membrane of quasi-molecule laser annealing technology.Set the processing range of this quasi-molecule laser annealing technology afterwards again according to above-mentioned data, therefore not only can avoid the generation of workbench pollution really, more can effectively increase the generation area of polysilicon membrane, to improve production capacity.
With judge that according to the personal experience setting on technology border compares by the operator voluntarily in the prior art, technology border establishing method among the present invention then can be taken into account the stability of technology simultaneously and improve production capacity, the generation of avoiding low workbench to pollute on the one hand, can increase processing range again on the other hand, formed amorphous silicon membrane is done more efficient utilization, significantly increase economic efficiency.
The above only is the preferred embodiments of the present invention, and all equalizations of doing according to claim of the present invention change and modify, and all should belong to the covering scope of patent of the present invention.
Claims (9)
1. method of utilizing quasi-molecule laser annealing technology to make polysilicon membrane, this method includes the following step:
One substrate is provided;
On this substrate, form an amorphous silicon membrane;
Measure the thickness of this amorphous silicon membrane, be positioned at the center of this amorphous silicon membrane with definition one first area on this amorphous silicon membrane, and one second area be positioned at the outer rim of this amorphous silicon membrane, wherein this amorphous silicon membrane in this first area has one first thickness, and this amorphous silicon membrane in this second area has sloped sidewall structure, and this sloped sidewall structure has a thickness distribution;
Set a technology border of this quasi-molecule laser annealing technology according to this amorphous silicon membrane in the thickness distribution at this sloped sidewall structure place in this second area, wherein this amorphous silicon membrane of this technology boundary has second thickness less than this first thickness; And
The processing range that this technology border is centered on carries out this quasi-molecule laser annealing technology, so that this amorphous silicon membrane of being located in this technology border recrystallizes into a polysilicon membrane.
2. the method for claim 1, wherein the thickness of this amorphous silicon membrane in this technology border produces ablation phenomen greater than a critical thickness to avoid this amorphous silicon membrane when carrying out this quasi-molecule laser annealing technology, causes workbench to pollute.
3. the method for claim 1, wherein this second thickness is 90% of this first thickness.
4. the method for claim 1, wherein this substrate is a glass substrate.
5. the method for claim 1, wherein this technology border is positioned on this sloped sidewall.
6. the method for claim 1, wherein this first thickness is 300 to 800 dusts.
7. the method for claim 1, wherein this excimer laser is selected from XeCl, ArF, KrF or XeF laser.
8. the method for claim 1, wherein this quasi-molecule laser annealing technology is carried out in a reative cell.
9. method as claimed in claim 8, wherein this reative cell has a transparent window, to export this excimer laser to this amorphous silicon membrane via this transparent window.
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| CN 02150450 CN1275301C (en) | 2002-11-12 | 2002-11-12 | Process for preparing polysilicon film using quasi-molecule laser annealing technology |
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| CN 02150450 CN1275301C (en) | 2002-11-12 | 2002-11-12 | Process for preparing polysilicon film using quasi-molecule laser annealing technology |
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| CN1275301C true CN1275301C (en) | 2006-09-13 |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN101378016B (en) * | 2007-08-29 | 2010-12-08 | 中国科学院半导体研究所 | Method for preparing SiGe or Ge quantum point using quasi-molecule laser annealing |
| CN103219230B (en) | 2013-04-19 | 2015-09-30 | 京东方科技集团股份有限公司 | The manufacture method of low temperature polycrystalline silicon, low-temperature polysilicon film and thin-film transistor |
| CN103361734B (en) * | 2013-07-09 | 2015-11-25 | 上海和辉光电有限公司 | A kind of method improving output efficiency of polycrystalline silicon |
| CN104790032A (en) * | 2015-03-16 | 2015-07-22 | 大连大学 | Method for laser pulse sputtering deposition preparation of polycrystalline silicon thin film |
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