CN101655645B - Masking film for sequential lateral solidification (SLS) technology and laser crystallization method - Google Patents

Masking film for sequential lateral solidification (SLS) technology and laser crystallization method Download PDF

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CN101655645B
CN101655645B CN2009101689627A CN200910168962A CN101655645B CN 101655645 B CN101655645 B CN 101655645B CN 2009101689627 A CN2009101689627 A CN 2009101689627A CN 200910168962 A CN200910168962 A CN 200910168962A CN 101655645 B CN101655645 B CN 101655645B
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corner rectangle
module
unit
mask
triangle
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CN101655645A (en
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张茂益
张志雄
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AU Optronics Corp
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AU Optronics Corp
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Abstract

The invention discloses a masking film applied to a sequential lateral solidification (SLS) technology and a laser crystallization method. The masking film comprises a plurality of repeated patterns which are configured in parallel, wherein each repeated pattern comprises adjacent rectangles or equilateral triangles, and the rectangles or the triangles are lightproof or transparent patterns. The masking film is applied to the SLS technology, and a polysilicon pattern in at least two crystalline grain directions can be manufactured due to a symmetrical concept of the patterns on the masking film. In addition, a perfect grain boundary can be obtained by controlling the area of the patterns of a plurality of lightproof areas and transparent areas on the masking film.

Description

The mask and the laser crystal method that are used for sequence side crystallization technique
This case is to be on August 30th, 2005 applying date, and application number is 200510093808.X, and name is called the dividing an application of China application of " mask and the laser crystal method that are used for sequence side crystallization technique ".
Technical field
The present invention relates to employed mask among a kind of polysilicon membrane preparation technology, particularly relate to and a kind ofly produce the mask of the polysilicon membrane that a crystalline boundary disperses and utilize the laser crystal method of this mask with sequence side crystallization technique.
Background technology
Thin film transistor (TFT) (Thin film transistor; TFT) be widely used in the driving of active LCD, wherein the silicon thin film material that uses according to thin film transistor (TFT) has two types of amorphous silicon (amorphous-silicon) and polysilicons (poly-silicon) usually.
In the manufacturing of LCD, polycrystalline silicon material has many characteristics that are better than amorphous silicon material.Polysilicon has bigger crystal grain (grain), makes electronics move freely easily in polysilicon, so the electron mobility of polysilicon (mobility) is higher than amorphous silicon.With the thin film transistor (TFT) that polysilicon is made, its reaction time is faster than amorphous silicon film transistor.In the LCD of equal resolution, the shared substrate area of use polycrystalline SiTFT (poly-Si TFT) can be littler than using the shared substrate area of amorphous silicon film transistor, and improve the aperture opening ratio of liquid crystal panel.Under identical brightness, use the LCD (poly-Si TFT LCD) of polycrystalline SiTFT can adopt the backlight that hangs down wattage, reach the requirement of low power consumption.
On substrate, make at present polysilicon membrane utilize mostly low temperature polycrystalline silicon preparation technology (Low TemperaturePoly-Silicon, LTPS).Low temperature polycrystalline silicon preparation technology is as thermal source with excimer laser (Excimer Laser).When laser radiation (irradiate) on substrate with amorphous silicon membrane, amorphous silicon membrane absorbs the energy of excimer laser and is transformed into polysilicon membrane.
(Sequential Lateral Solidification, SLS) technology is a kind of polysilicon formation technology of utilizing quasi-molecule laser annealing to develop to sequence side crystallization.Utilize laser to see through the laser that mask produces given shape, the crystallization of first road laser elder generation goes out laser radiation zone, second road and the overlapping some of the first road crystal region behind the crystal grain that side direction grows up, by the irradiation amorphous silicon region, it can be the crystalline particle that crystal seed becomes to grow long column shape with the first road crystallization polysilicon membrane that the silicon thin film of the second road laser institute irradiation area begins after the fusion.
Please refer to Figure 1A, it is the side diagrammatic cross-sectional view that a use sequence side crystallization method is made polysilicon membrane.Shown in Figure 1A, an amorphous silicon membrane 11 is formed on the substrate 10 by chemical vapor deposition (CVD) or sputter coating method (sputtering).One mask 2 is formed at the top of amorphous silicon membrane 11.Mask 2 comprises a plurality of strip photic zones 21 and a plurality of strip shading region 22 (shown in Figure 1B).One LASER Light Source can scan amorphous silicon membrane 11 according to the parallel stepping of direction that is parallel to photic zone 21 and shading region 22 strip pattern minor axises, shines different zones progressively to obtain the poly-silicon pattern of lateral growth with stepping on amorphous silicon membrane 11.
Please refer to Fig. 1 C, it is for passing through mask 2 resulting poly-silicon pattern structural representations.Can be by mask 2 resulting polysilicon grain borders (grain boundary) 111 perpendicular to the direction of crystal grain-growth.TFT's is electrically preferable when current channel is parallel to the grain boundary, if current channel during perpendicular to the grain boundary owing to must cross the grain boundary, therefore electrically relatively poor.When making LTPS TFT, the design of wiring (Layout) can not have only a direction usually, but in SLS technology, then can suffer from because of having the TFT of different current channel directions, the problem of different homogeneitys (Uniformity) is electrically arranged because of above-mentioned reason.
Therefore, how to solve the electrical uneven problem of TFT that the crystallization direction that suffers from influences in the SLS technological process, one of direction of making great efforts for relevant dealer.
Summary of the invention
The object of the present invention is to provide a kind of mask of polysilicon membrane, being applied to sequence side crystallization technique, and produce the polysilicon membrane that a crystalline boundary is disperseed.
Another object of the present invention is to provide a kind of mask that is applied to sequence side crystallization technique, can produce the poly-silicon pattern of at least two kinds of grain orientation.
The invention provides a kind of mask that is applied to sequence side crystallization technique, have the repeat patterns of plurality of parallel configuration, this pattern comprises:
One first module, be connected and constitute by four rectangles, wherein these four rectangles are respectively upper left corner rectangle, lower left corner rectangle, upper right corner rectangle, lower right corner rectangle according to the orientation, and the limit, left side of this upper left corner rectangle is positioned at limit, left side right-hand of this described lower left corner rectangle, the described upper left corner rectangle of wherein said first module and described lower right corner rectangle are shading region, and described upper right corner rectangle and described lower left corner rectangle are photic zone; And
Unit one second, be positioned at the right side of described first module and be close to this first module, described Unit second is connected by four rectangles and constitutes, wherein these described four rectangles are respectively upper left corner rectangle, lower left corner rectangle, upper right corner rectangle, lower right corner rectangle according to the orientation, and the limit, left side of described upper left corner rectangle is positioned at limit, left side right-hand of described lower left corner rectangle, the upper left corner rectangle of wherein said Unit second and lower right corner rectangle are photic zone, and the upper right corner rectangle of described Unit second and lower left corner rectangle are shading region; Wherein, the left side of the upper left corner rectangle of and then described Unit second, the right of the upper right corner rectangle of described first module, and the left side of the lower left corner rectangle of and then described Unit second, the right of the lower right corner rectangle of this first module.
The present invention also provides a kind of method of laser crystallization, comprising: a substrate is provided, includes an amorphous silicon film;
One mask is provided, comprises:
The repeat patterns of plurality of parallel configuration has
One first module, be connected and constitute by four rectangles, wherein these four rectangles are respectively upper left corner rectangle, lower left corner rectangle, upper right corner rectangle, lower right corner rectangle according to the orientation, and the limit, left side of described upper left corner rectangle is positioned at limit, left side right-hand of described lower left corner rectangle, the described upper left corner rectangle of wherein said first module and described lower right corner rectangle are shading region, and described upper right corner rectangle and described lower left corner rectangle are photic zone; And
Unit one second, be positioned at the right side of described first module and be close to this first module, described Unit second is connected by four rectangles and constitutes, wherein said four rectangles are respectively upper left corner rectangle, lower left corner rectangle, upper right corner rectangle, lower right corner rectangle according to the orientation, and the limit, left side of described upper left corner rectangle is positioned at limit, left side right-hand of described lower left corner rectangle, the upper left corner rectangle of wherein said Unit second and lower right corner rectangle are photic zone, and the upper right corner rectangle of these described Unit two and lower left corner rectangle are shading region;
Wherein, the left side of the upper left corner rectangle of and then described Unit second, the right of the upper right corner rectangle of described first module, and the left side of the lower left corner rectangle of and then described Unit second, the right of the lower right corner rectangle of this first module;
Utilize described mask, make the pattern of described laser, this amorphous silicon film is carried out the laser annealing first time handle via described configured in parallel; And
Make described mask and described substrate along the parallel direction distance that relatively moves, and utilize this mask, make the pattern of described laser once more, carry out the laser annealing second time and handle via described configured in parallel.
The present invention also provides a kind of mask that is applied to sequence side crystallization technique, comprise: the repeat patterns of plurality of parallel configuration, this described pattern is made of a first module and Unit one second, and described Unit second is positioned at the right side of described first module and is close to described first module;
Described first module is connected by four equilateral triangles respectively with described Unit second and constitutes, wherein said four equilateral triangles are one first upright triangle, one first handstand triangle, one second upright triangle, one second handstand triangle formation according to arranging from the bottom to top, and described first limit, the leg-of-mutton left side described first upright triangle right edge of joining of standing upside down, the described second upright leg-of-mutton bottom is connected in the described first handstand triangle top, the described second leg-of-mutton right edge limit, the described second upright triangle left side that joins of standing upside down;
The first handstand triangle and the second handstand triangle of wherein said first module are shading region, and the first upright triangle and the second upright triangle of described first module are photic zone, and the first handstand triangle and the second handstand triangle of described Unit second are photic zone, and the first upright triangle of described Unit second and the second upright triangle are shading region.
The present invention also provides a kind of method of laser crystallization, comprising: a substrate is provided, includes an amorphous silicon film;
One mask is provided, comprises:
The repeat patterns of plurality of parallel configuration, each described pattern is made of a first module and Unit one second, and described Unit second is positioned at the right side of described first module and is close to this first module;
Described first module is connected by four equilateral triangles respectively with described Unit second and constitutes, wherein said four equilateral triangles are one first upright triangle, one first handstand triangle, one second upright triangle, one second handstand triangle formation according to arranging from the bottom to top, and described first limit, the leg-of-mutton left side described first upright triangle right edge of joining of standing upside down, the described second upright leg-of-mutton bottom is connected in the described first handstand triangle top, the described second leg-of-mutton right edge limit, the described second upright triangle left side that joins of standing upside down;
The first handstand triangle and the second handstand triangle of wherein said first module are shading region, and the first upright triangle of described first module and the second upright triangle are photic zone;
The first handstand triangle and the second handstand triangle of wherein said Unit second are photic zone, and the first upright triangle of described Unit second and the second upright triangle are shading region;
Utilize described mask, make the pattern of described laser, this amorphous silicon film is carried out the laser annealing first time handle via described configured in parallel; And
Make described mask and described substrate along the parallel direction distance that relatively moves, and utilize described mask, make the pattern of described laser once more, carry out the laser annealing second time and handle via described configured in parallel.
The present invention also provides a kind of mask that is applied to sequence side crystallization, comprising:
The repeat patterns of plurality of parallel configuration, and each this repeat patterns comprises a first module and Unit one second, wherein this first module, this Unit second have a plurality of photic zones and a plurality of shading region respectively, in addition, each this repeat patterns has two major axis line of symmetries and a minor axis that is positioned at different axis, and this first module and this Unit second lay respectively at two sides of two major axis line of symmetries, so this first module is symmetrical in this Unit second.
The present invention also provides a kind of method of laser crystallization, comprising:
One substrate is provided, includes an amorphous silicon film;
One mask is provided, comprises:
The repeat patterns of plurality of parallel configuration, and each this repeat patterns comprises a first module and Unit one second, this first module wherein, this Unit second has a plurality of photic zones and a plurality of shading region respectively, in addition, each this repeat patterns has two major axis line of symmetries and a minor axis that is positioned at different axis, and this first module and this Unit second lay respectively at two sides of two major axis line of symmetries, so this first module is symmetrical in this Unit second, and this first module and this Unit second include two sub-cells respectively, and its inner two sub-cells are then with respect to indivedual symmetries of two major axis line of symmetries;
Utilize described mask, make the pattern of described laser, described amorphous silicon film is carried out the laser annealing first time handle via described configured in parallel; And
Make described mask and described substrate along being parallel to the described short-axis direction distance of totally 1/2 minor axis that relatively moves, and utilize described mask, make the pattern of described laser once more, carry out laser annealing processing second time via described configured in parallel.
Use the disclosed mask of the present invention in the SLS technology, because the notion of the graphic design symmetry on the mask can be made the poly-silicon pattern of at least two kinds of grain orientation.In addition, utilize a plurality of shading regions and photic zone pattern area size on the control mask, can obtain perfect grain boundary.
The area of described a plurality of shading regions is less than or equal to the area of described a plurality of photic zones.
Description of drawings
Figure 1A is the side diagrammatic cross-sectional view that a use sequence side crystallization method is made polysilicon membrane;
Figure 1B is an employed mask front schematic view among Figure 1A;
Fig. 1 C is for passing through the resulting poly-silicon pattern structural representation of mask among Figure 1B;
Fig. 2 is the mask schematic top plan view of a preferred embodiment of the present invention;
Fig. 3 is for using the disclosed mask of the present invention schematic flow sheet with the formation polysilicon layer in the SLS technology;
After Fig. 4 A shows that the step S304 of above-mentioned Fig. 3 finishes the secondary laser crystallization processes through mask 3, the poly-silicon pattern that is presented on the amorphous silicon membrane;
Thin film transistor channel (TFTchannel) synoptic diagram that Fig. 4 B disposes for utilizing mask 3 formed poly-silicon patterns;
Fig. 5 A is the part schematic top plan view of disclosed another preferred embodiment mask 4 of the present invention;
After Fig. 5 B shows that the step S304 of above-mentioned Fig. 3 finishes the secondary laser crystallization processes through mask 4, the poly-silicon pattern that is presented on the amorphous silicon membrane;
Fig. 6 A is the part schematic top plan view of disclosed another preferred embodiment mask 4 of the present invention;
After Fig. 6 B shows that the step S304 of above-mentioned Fig. 3 finishes the secondary laser crystallization processes through mask 4, the poly-silicon pattern that is presented on the amorphous silicon membrane.
The main element symbol description:
10 substrates, 11 amorphous silicon membranes
2 masks, 21 strip photic zones
22 strip shading regions, 111 grain boundaries
3 masks, 31 repeat patterns
311 major axis line of symmetries, 312 minor axises
313 first modules Unit 314 second
313a photic zone 313b shading region
314a photic zone 314b shading region
4 masks, 41 repeat patterns
411 major axis line of symmetries, 412 minor axises
413 first modules Unit 414 second
413a photic zone 413b shading region
414a photic zone 414b shading region
5 masks, 51 repeat patterns
511 major axis line of symmetries, 512 minor axises
513 first modules Unit 514 second
513a photic zone 513b shading region
514a photic zone 514b shading region
Embodiment
Preferred embodiment of the present invention is described with reference to the accompanying drawings.
The present invention discloses a kind of mask that is applied to sequence side crystallization technique (SLS), in order to produce the polysilicon membrane that a crystalline boundary is disperseed.About mask of the present invention, now cooperate graphic and following several specific embodiments to describe in detail.
Please refer to Fig. 2, it is the mask schematic top plan view of a preferred embodiment of the present invention.Mask 3 among Fig. 2 comprises the repeat patterns (pattern) 31 of a plurality of configured in parallel, repeat patterns 31 each intervals one specific range of described configured in parallel.Each repeat patterns 31 has a major axis line of symmetry 311 and a minor axis 312.Above-mentioned each repeat patterns 31 is constituted by at least one first module 313 and with second unit 314 that the first module minute surface is symmetrical in described pattern major axis line of symmetry 311.Wherein, first, second unit has a plurality of photic zone 313a, 314a and shading region 313b, 314b respectively.
Mask of the present invention be used for described in Figure 1A and sequence side crystallization technique, reach the purpose that produces the polysilicon membrane that a crystalline boundary disperses.Wherein please refer to Fig. 3, its for use the disclosed mask of the present invention in the SLS technology to form the schematic flow sheet of a polysilicon layer, comprise at least:
Step S301 a: substrate at first is provided, includes a plurality of amorphous silicon zone on this substrate.
Step S302 a: mask is provided, this mask comprises the repeat patterns (pattern) of a plurality of configured in parallel, have a major axis line of symmetry and a minor axis, described repeat patterns is constituted by a first module and with Unit second that the first module minute surface is symmetrical in the major axis line of symmetry of described pattern, and wherein first, second unit has a plurality of photic zones and shading region respectively.
Step S303: utilize described mask, make the pattern of a laser beam through described configured in parallel, the laser annealing first time is carried out in one of them amorphous silicon zone on the substrate handled, the pattern of described laser radiation comprises photic zone and shading;
Step S304: mask and substrate are relatively moved along being parallel to described short-axis direction, move total distance be not more than short wheelbase from 1/2, and make laser utilize the pattern of described mask once more via these configured in parallel, carrying out the laser annealing second time handles, the method that wherein changes mask and substrate relative position comprises mobile mask or moving substrate, looks the operation situation of board and accommodation;
Step S305: above-mentioned steps S303~S304 is repeated in other amorphous silicon zone on the substrate carry out the laser annealing processing.
The polysilicon membrane that is come out by the preparation technology's manufacturing among described mask 3 and Fig. 3 is shown in Fig. 4 A.Fig. 4 A is after showing that above-mentioned steps 304 is finished the secondary laser crystallization processes, the poly-silicon pattern that is presented on the amorphous silicon membrane.Because first module and Unit second on the mask 3 just are a minute surface symmetric figure, therefore the poly-silicon pattern of the irregular crystal grain shown in Fig. 4 A can appear after twice laser annealing operation.By the disclosed mask of the present invention, can become to grow the crystalline membrane of irregular direction, cooperate the double-gate film transistor to obtain evenly and excellent electrical property.Please refer to Fig. 4 B, thin film transistor channel (TFT channel) synoptic diagram that it disposes for utilizing mask 3 formed poly-silicon patterns.
The disclosed mask of the present invention is applied to sequence side crystallization technique to obtain the polysilicon membrane that a crystalline boundary is disperseed, and does not limit employed pattern form on the mask.As long as design can simultaneously can be produced at least two kinds of directions, the principle of shaped design minute surface symmetry according to the invention all can be overlapped and is used for mask pattern of the present invention.
Please refer to Fig. 5 A, it is the part schematic top plan view of disclosed another preferred embodiment mask 4 of the present invention.As above-mentioned mask 3, mask 4 comprises the repeat patterns (pattern) 41 of a plurality of configured in parallel, repeat patterns 41 each intervals one specific range of these configured in parallel.Each repeat patterns 41 of mask 4 comprises at least one first module 413 equally and constitutes with second unit 414 that the first module minute surface is symmetrical in described pattern.Wherein, first, second unit has a plurality of photic zone 413a, 414a and shading region 413b, 414b respectively.Different with mask 3 is that repeat patterns 41 has two major axis line of symmetries 411 and a minor axis 412.Therefore, the minute surface symmetry of the first module 413 and second unit 414 is meant the indivedual symmetries of its inner two sub-cells with respect to two major axis line of symmetries.With above-mentioned mask 4 along minor axis 412 folk prescriptions to through after the side crystallization technology of Fig. 3, can obtain the poly-silicon pattern shown in figure five B.
At the arrangement mode of repeat patterns inside why, the shading region of above-mentioned two embodiment and photic zone all are with rectangle illustration mask pattern, are rectangular patterns equally in order to illustrate just, so long as meet the condition of minute surface symmetry, no matter, all in category of the present invention.Lift a preferred embodiment below in addition, the changeability of the present invention on mask pattern is described.
Please refer to Fig. 6 A, it is the part schematic top plan view of disclosed another preferred embodiment mask 5 of the present invention.The design concept that is equal to above-mentioned other embodiment, each repeat patterns 51 of mask 5 comprise at least one first module 513 equally and constitute with second unit 514 that the first module minute surface is symmetrical in described pattern.Repeat patterns 51 has two major axis line of symmetries 511 and a minor axis 512.As above-mentioned mask 4, the minute surface symmetry of the first module 513 and second unit 514 is meant the indivedual symmetries of its inner two sub-cells with respect to two major axis line of symmetries 511.A plurality of shading region 513a in the present embodiment and a plurality of photic zone 514b are shaped as triangle, and by the arrangement of rule and minute surface symmetry, mask 5 can obtain the poly-silicon pattern shown in Fig. 5 B through after the side crystallization technologies of Fig. 3.
The designed mask pattern of the present invention is the notion by the similar pattern symmetry, designs different lightproof areas and transmission region.What deserves to be mentioned is, when making multidirectionalization of poly-silicon pattern grain boundary, also want the well-balanced perfection of crystal grain-growth, mask pattern of the present invention has the clever thought on the size design, that is, the area of lightproof area is not more than the area of transmission region, and preferred embodiment is the area of the area of lightproof area less than transmission region.This is in the first time of laser crystallization technology and when for the second time substrate is with respect to mask position mobile in the laser crystallization technology, causes the repetition of laser radiation transmission region.Because the zone of lower temperature when the border of shading region is the amorphous silicon fusion, therefore repeating regional area fusion once again of faster crystallization so that cause the bad probability of crystal grain crystallization to improve, so laser radiation transmission region to reach the grain boundary more perfect purpose of growing up.
Mask in the disclosed application of the present invention SLS technology when comparing mutually with prior art, has more and gets row characteristic and advantage ready:
1. utilize the notion of the graphic design symmetry on the mask, design the poly-silicon pattern that to make at least two kinds of grain orientation.
2. utilize a plurality of shading regions and photic zone pattern area size on the control mask, to obtain perfect grain boundary.
The present invention not only innovates on technological thought, and compares with existing method and to have above-mentioned beneficial effect.
Above-listed detailed description is at the specifying of preferred embodiment of the present invention, but the foregoing description is not in order to restriction protection scope of the present invention, does not allly break away from the equivalence that skill spirit of the present invention done and implements or change, all should be included in protection scope of the present invention.

Claims (10)

1. a mask that is applied to sequence side crystallization technique is characterized in that, has the repeat patterns of plurality of parallel configuration, and this pattern comprises:
One first module, be connected and constitute by four rectangles, wherein these four rectangles are respectively upper left corner rectangle, lower left corner rectangle, upper right corner rectangle, lower right corner rectangle according to the orientation, and the limit, left side of this upper left corner rectangle is positioned at limit, left side right-hand of this described lower left corner rectangle, the described upper left corner rectangle of wherein said first module and described lower right corner rectangle are shading region, and described upper right corner rectangle and described lower left corner rectangle are photic zone; And
Unit one second, be positioned at the right side of described first module and be close to this first module, described Unit second is connected by four rectangles and constitutes, wherein these described four rectangles are respectively upper left corner rectangle, lower left corner rectangle, upper right corner rectangle, lower right corner rectangle according to the orientation, and the limit, left side of described upper left corner rectangle is positioned at limit, left side right-hand of described lower left corner rectangle, the upper left corner rectangle of wherein said Unit second and lower right corner rectangle are photic zone, and the upper right corner rectangle of described Unit second and lower left corner rectangle are shading region; Wherein, the left side of the upper left corner rectangle of and then described Unit second, the right of the upper right corner rectangle of described first module, and the left side of the lower left corner rectangle of and then described Unit second, the right of the lower right corner rectangle of this first module.
2. mask according to claim 1 is characterized in that, repeat patterns each interval one specific range of described configured in parallel.
3. the method for a laser crystallization is characterized in that comprising:
One substrate is provided, includes an amorphous silicon film;
One mask is provided, comprises:
The repeat patterns of plurality of parallel configuration has
One first module, be connected and constitute by four rectangles, wherein these four rectangles are respectively upper left corner rectangle, lower left corner rectangle, upper right corner rectangle, lower right corner rectangle according to the orientation, and the limit, left side of described upper left corner rectangle is positioned at limit, left side right-hand of described lower left corner rectangle, the described upper left corner rectangle of wherein said first module and described lower right corner rectangle are shading region, and described upper right corner rectangle and described lower left corner rectangle are photic zone; And
Unit one second, be positioned at the right side of described first module and be close to this first module, described Unit second is connected by four rectangles and constitutes, wherein said four rectangles are respectively upper left corner rectangle, lower left corner rectangle, upper right corner rectangle, lower right corner rectangle according to the orientation, and the limit, left side of described upper left corner rectangle is positioned at limit, left side right-hand of described lower left corner rectangle, the upper left corner rectangle of wherein said Unit second and lower right corner rectangle are photic zone, and the upper right corner rectangle of these described Unit two and lower left corner rectangle are shading region;
Wherein, the left side of the upper left corner rectangle of and then described Unit second, the right of the upper right corner rectangle of described first module, and the left side of the lower left corner rectangle of and then described Unit second, the right of the lower right corner rectangle of this first module;
Utilize described mask, make the pattern of described laser, this amorphous silicon film is carried out the laser annealing first time handle via described configured in parallel; And
Make described mask and described substrate along the parallel direction distance that relatively moves, and utilize this mask, make the pattern of described laser once more, carry out the laser annealing second time and handle via described configured in parallel.
4. mask that is applied to sequence side crystallization technique is characterized in that comprising:
The repeat patterns of plurality of parallel configuration, this described pattern is made of a first module and Unit one second, and described Unit second is positioned at the right side of described first module and is close to described first module;
Described first module is connected by four equilateral triangles respectively with described Unit second and constitutes, wherein said four equilateral triangles are one first upright triangle, one first handstand triangle, one second upright triangle, one second handstand triangle formation according to arranging from the bottom to top, and described first limit, the leg-of-mutton left side described first upright triangle right edge of joining of standing upside down, the described second upright leg-of-mutton bottom is connected in the described first handstand triangle top, the described second leg-of-mutton right edge limit, the described second upright triangle left side that joins of standing upside down;
The first handstand triangle and the second handstand triangle of wherein said first module are shading region, and the first upright triangle and the second upright triangle of described first module are photic zone, and the first handstand triangle and the second handstand triangle of described Unit second are photic zone, and the first upright triangle of described Unit second and the second upright triangle are shading region.
5. mask according to claim 4 is characterized in that, repeat patterns each interval one specific range of described configured in parallel.
6. the method for a laser crystallization is characterized in that comprising:
One substrate is provided, includes an amorphous silicon film;
One mask is provided, comprises:
The repeat patterns of plurality of parallel configuration, each described pattern is made of a first module and Unit one second, and described Unit second is positioned at the right side of described first module and is close to this first module;
Described first module is connected by four equilateral triangles respectively with described Unit second and constitutes, wherein said four equilateral triangles are one first upright triangle, one first handstand triangle, one second upright triangle, one second handstand triangle formation according to arranging from the bottom to top, and described first limit, the leg-of-mutton left side described first upright triangle right edge of joining of standing upside down, the described second upright leg-of-mutton bottom is connected in the described first handstand triangle top, the described second leg-of-mutton right edge limit, the described second upright triangle left side that joins of standing upside down;
The first handstand triangle and the second handstand triangle of wherein said first module are shading region, and the first upright triangle of described first module and the second upright triangle are photic zone;
The first handstand triangle and the second handstand triangle of wherein said Unit second are photic zone, and the first upright triangle of described Unit second and the second upright triangle are shading region;
Utilize described mask, make the pattern of described laser, this amorphous silicon film is carried out the laser annealing first time handle via described configured in parallel; And
Make described mask and described substrate along the parallel direction distance that relatively moves, and utilize described mask, make the pattern of described laser once more, carry out the laser annealing second time and handle via described configured in parallel.
7. mask that is applied to sequence side crystallization is characterized in that comprising:
The repeat patterns of plurality of parallel configuration, and each this repeat patterns comprises a first module and Unit one second, this first module wherein, this Unit second has a plurality of photic zones and a plurality of shading region respectively, in addition, each this repeat patterns has two major axis line of symmetries and a minor axis that is positioned at different axis, and this first module and this Unit second lay respectively at two sides of two major axis line of symmetries, so this first module is symmetrical in this Unit second, this first module and this Unit second comprise having two sub-cells at least respectively, described two sub-cells are with respect to indivedual symmetries of two major axis line of symmetries, and each this sub-cell is made up of a photic zone and a shading region.
8. mask according to claim 7 is characterized in that one of them sub-cell with respect to the indivedual symmetries of this major axis line of symmetry respectively, is positioned at the photic zone that is of major axis line of symmetry two sides.
9. mask according to claim 7 is characterized in that one of them sub-cell with respect to the indivedual symmetries of this major axis line of symmetry respectively, is positioned at the shading region that is of major axis line of symmetry two sides.
10. the method for a laser crystallization is characterized in that comprising:
One substrate is provided, includes an amorphous silicon film;
One mask is provided, the repeat patterns that comprises the plurality of parallel configuration, and each this repeat patterns comprises a first module and Unit one second, this first module wherein, this Unit second has a plurality of photic zones and a plurality of shading region respectively, in addition, each this repeat patterns has two major axis line of symmetries and a minor axis that is positioned at different axis, and this first module and this Unit second lay respectively at two sides of two major axis line of symmetries, so this first module is symmetrical in this Unit second, and this first module and this Unit second include two sub-cells respectively, and its inner two sub-cells are then with respect to indivedual symmetries of two major axis line of symmetries;
Utilize described mask, make the pattern of described laser, described amorphous silicon film is carried out the laser annealing first time handle via described configured in parallel; And
Make described mask and described substrate along being parallel to the described short-axis direction distance of totally 1/2 minor axis that relatively moves, and utilize described mask, make the pattern of described laser once more, carry out laser annealing processing second time via described configured in parallel.
CN2009101689627A 2005-08-30 2005-08-30 Masking film for sequential lateral solidification (SLS) technology and laser crystallization method Active CN101655645B (en)

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CN1357925A (en) * 2000-12-06 2002-07-10 株式会社日立制作所 Thin film transistor and its manufacture
CN1501065A (en) * 2002-11-19 2004-06-02 友达光电股份有限公司 Polysilicon film crystallization quality detecting apparatus, detecting and controlling method therefor
CN1521806A (en) * 2003-01-08 2004-08-18 ���ǵ�����ʽ���� Polycrystalline silicon thin film transistor array board and manufacturing method thereof

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1357925A (en) * 2000-12-06 2002-07-10 株式会社日立制作所 Thin film transistor and its manufacture
CN1501065A (en) * 2002-11-19 2004-06-02 友达光电股份有限公司 Polysilicon film crystallization quality detecting apparatus, detecting and controlling method therefor
CN1521806A (en) * 2003-01-08 2004-08-18 ���ǵ�����ʽ���� Polycrystalline silicon thin film transistor array board and manufacturing method thereof

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