CN108762366A - A kind of band-gap reference circuit - Google Patents
A kind of band-gap reference circuit Download PDFInfo
- Publication number
- CN108762366A CN108762366A CN201810559464.4A CN201810559464A CN108762366A CN 108762366 A CN108762366 A CN 108762366A CN 201810559464 A CN201810559464 A CN 201810559464A CN 108762366 A CN108762366 A CN 108762366A
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- China
- Prior art keywords
- pipes
- resistance
- grid
- drain electrode
- circuit
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
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- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F1/00—Automatic systems in which deviations of an electric quantity from one or more predetermined values are detected at the output of the system and fed back to a device within the system to restore the detected quantity to its predetermined value or values, i.e. retroactive systems
- G05F1/10—Regulating voltage or current
- G05F1/46—Regulating voltage or current wherein the variable actually regulated by the final control device is dc
- G05F1/56—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices
- G05F1/565—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices sensing a condition of the system or its load in addition to means responsive to deviations in the output of the system, e.g. current, voltage, power factor
- G05F1/567—Regulating voltage or current wherein the variable actually regulated by the final control device is dc using semiconductor devices in series with the load as final control devices sensing a condition of the system or its load in addition to means responsive to deviations in the output of the system, e.g. current, voltage, power factor for temperature compensation
Abstract
The invention discloses a kind of band-gap reference circuits, including：One start-up circuit closes start-up circuit after the startup and reference circuit work for completing the reference circuit；One core reference circuit using the curvature compensation of current-mode, while compensating for the first order temperature coefficient of circuit and advanced temperature coefficient；One operational amplifier circuit minimizes unbalance of system voltage using simple two-layer configuration.A kind of band-gap reference circuit of the present invention, the triode being biased under different electric currents using two are obtained the non-linear current about temperature, compensate the high-order temperature term of VEB.Output voltage stabilization of the present invention, effective temperature coefficient is small also to have higher power supply rejection ratio.
Description
Technical field
The present invention relates to reference circuit more particularly to a kind of reference circuits with curvature compensation.
Background technology
In the application of Internet of Things and most of wireless telecommunications, associated receiver circuitry or radiating circuit etc. are all that needs are low
Power consumption, therefore the reference circuit that can generate low-power consumption is very crucial and very necessary for entirely applying.Benchmark electricity
Pith of the road as analog circuit is generally required and is worked normally within the scope of a wider temperature, therefore do not require nothing more than
It is low in energy consumption, it is also necessary to which that performance is stablized, and has preferable temperature characterisitic.Traditional mode may be used band-gap reference circuit and be set
Meter, but since base-collector voltage, collector current and offset voltage vary with temperature so that " the song of band gap voltage
Rate " is limited.Since CMOS technology has the offset voltage and process deviation beaten, the sample of band-gap reference can be shown obviously
The corresponding temperature value of different zero-temperature coefficients, it is difficult to reliably correct curvature so that bandgap voltage reference has very high temperature
Coefficient.
Invention content
To overcome the above-mentioned problems of the prior art, the main purpose of the present invention is to provide a kind of band-gap reference electricity
Road, the triode being biased under different electric currents using two obtain the non-linear current about temperature, compensate the high-order temperature of VEB
Spend item.Output voltage stabilization of the present invention, effective temperature coefficient is small also to have higher power supply rejection ratio.
In view of the above and other objects, the present invention provides a kind of band-gap reference circuit, include at least：
One start-up circuit closes start-up circuit after the startup and reference circuit work for completing the reference circuit；One core
Reference circuit using the curvature compensation of current-mode, while compensating for the first order temperature coefficient of circuit and advanced temperature coefficient；One
Operational amplifier circuit minimizes unbalance of system voltage using simple two-layer configuration.
The start-up circuit is made of the 7th resistance R7, the 5th PMOS tube PM5 and the tenth PMOS tube PM10；The source of PM10 pipes
The source electrode of pole and PM5 pipes all meets supply voltage VDD；The drain electrode of PM10 pipes is connected with the grid of one end of resistance R7 and PM5 pipes；
Another termination VSS of R7.
The core reference circuit is by the first PMOS tube PM1, the second PMOS tube PM2, third PMOS tube PM3, the 4th PMOS
Pipe PM4, the 6th PMOS tube PM6, the 7th PMOS tube PM7, the 8th PMOS tube PM8, the 9th PMOS tube PM9, the first triode Q1,
Two triode Q2, third transistor Q3, first resistor R1, second resistance R2,3rd resistor R3, the 4th resistance R4, the 5th resistance
R5, the 6th resistance R6 and an amplifier are constituted；The source electrode of PM1 pipes, the source electrode of PM2 pipes, the source electrode of PM3 pipes and PM4 pipes source electrode all
Connect supply voltage VDD；The grid of PM1 pipes and the grid of PM2 pipes, the grid of the grid of PM3 pipes, the grid of PM4 pipes, PM10 pipes
Pole, the drain electrode of PM6 pipes, the inverting input of amplifier, one end of resistance R5, the drain electrode of PM5 pipes, one end of resistance R3, Q1 pipes
Emitter is connected, vertex ticks X；The source electrode of the drain electrode connection PM6 pipes of PM1 pipes；The drain electrode connection PM7 pipes of PM2 pipes
Source electrode；The source electrode of the drain electrode connection PM8 pipes of PM3 pipes；The source electrode of the drain electrode connection PM9 pipes of PM4 pipes；The grid and amplifier of PM6 pipes
Output end, the grid of PM7 pipes, the grid of PM8 pipes be connected with the grid of PM9 pipes；The drain electrode of PM7 pipes and the one of resistance R4
End, one end of resistance R1, one end of resistance R2 are connected with the in-phase input end of amplifier, vertex ticks Y；The leakage of PM8 pipes
Pole is connected with the emitter of the other end of resistance R4, the other end of resistance R5, Q3 pipes；The drain electrode of PM9 pipes is connected with resistance R6,
Output end of its node as reference voltage V REF；The emitter of the other end connection Q2 pipes of resistance R1；The other end of resistance R3,
The collector of Q1 pipes, the base stage of Q1 pipes, the collector of Q2 pipes, the base stage of Q2 pipes, the other end of resistance R2, Q3 pipes collector,
The base stage of Q3 pipes and the other end of resistance R6 all meet VSS.
The operational amplifier circuit is by the 11st PMOS tube PM11, the 12nd PMOS tube PM12, the 13rd PMOS tube PM13, the tenth
Four PMOS tube PM14, the first NMOS tube NM1, the second NMOS tube NM2, third NMOS tube NM3 and the first capacitance C1 are constituted；PM11 is managed
Source electrode and the source electrodes of PM12 pipes all meet VDD；The grid of PM11 pipes is connected with the grid of PM12 pipes, is connected to bias voltage VP；
The drain electrode of PM11 pipes is connected with the source electrode of the source electrode of PM13 pipes and PM14 pipes；Anti-phase input of the grid of PM13 pipes as amplifier
End；In-phase input end of the grid of PM14 pipes as amplifier；The drain electrode of PM13 pipes and the drain electrodes of NM1 pipes, NM1 pipes grid and
The grid of NM2 pipes is connected；The drain electrode of PM14 pipes is connected with the grid of the drain electrode of NM2 pipes, one end of capacitance C1 and NM3 pipes；
The drain electrode of PM12 pipes is connected with the drain electrode of the other end of capacitance C1 and NM3 pipes, output end of the node as amplifier；NM1 is managed
Source electrode, the source electrode of NM2 pipes and the source electrode of NM3 pipes all meet VSS.
Description of the drawings
The attached drawing constituted part of this application is used to provide further understanding of the present invention, schematic reality of the invention
Example and its explanation are applied for explaining the present invention, is not constituted improper limitations of the present invention.In the accompanying drawings：
Fig. 1 is a kind of band-gap reference circuit figure of the present invention；
Fig. 2 is a kind of band-gap reference circuit operational amplifier circuit figure of the present invention.
Specific implementation mode
In conjunction with shown in Fig. 1 and Fig. 2, in the following embodiments, a kind of band-gap reference circuit, including：One starts electricity
Start-up circuit is closed in road after the startup and reference circuit work for completing the reference circuit；One core reference circuit uses
The curvature compensation of current-mode, while compensating for the first order temperature coefficient of circuit and advanced temperature coefficient；One operational amplifier circuit uses
Simple two-layer configuration minimizes unbalance of system voltage.
The start-up circuit is made of resistance R7, PM5 pipe and PM10 pipes；It is 0 when Q1 is managed with electric current in resistance R3, that is,
When reference circuit does not work, current mirror PM1 pipes, the cut-off of PM2 pipes, PM10 pipes are also switched off, and the gate voltage of PM5 pipes pulls down to VSS,
PM6 pipes are connected and inject huge electric current to Q1 pipes and resistance R3；After circuit start, there is electric current to flow through in PM10 pipes, PM5
The gate voltage of pipe is essentially pulled up to VDD, and start-up circuit is closed.
The core reference circuit is by PM1 pipes, PM2 pipes, PM3 pipes, PM4 pipes, PM6 pipes, PM7 pipes, PM8 pipes, PM9, Q1, Q2
Pipe, Q3 pipes, resistance R1, resistance R2, resistance R3, resistance R4, resistance R5, resistance R6 and an amplifier are constituted；Node voltage VX=VY,
And R2=R3, so I1B=I2B；The electric current for flowing through current mirror is equal, so I1A=I2A, so flowing through two-shipper transistor（Q1 pipes,
Q2 is managed）Electric current and absolute temperature is proportional to；Non-linear current on resistance R4, R5 can compensate the high-order of emitter-base stage
Temperature term.
The operational amplifier circuit is managed by PM11, PM12 is managed, PM13 pipes, PM14 pipes, NM1 pipes, NM2 pipes, NM3 is managed and capacitance C1 structures
At；Using simple two-layer configuration, P-channel differential pair tube（PM13,PM14）As input stage, by adjusting the length and width of transistor
Than（W/L）, PM13 pipes is made to be equal to the length-width ratio ratio of NM1 pipe and NM3 pipes, and twice PM11 with the length-width ratio ratio of NM3 pipes
The length-width ratio ratio of pipe and PM12 pipes minimizes unbalance of system voltage.
The present invention proposes a kind of band-gap reference circuit, which uses 0.18 μm of technological design, in 1.8V supply voltages
Under, at 27 DEG C, reference output voltage 1.24V, from -55 DEG C to 125 DEG C within the temperature range of, the variation of output voltage only has
0.35mV, temperature coefficient are 1.37 × 10-6/ DEG C, power supply rejection ratio reaches 73dB.
Although the present invention is illustrated using specific embodiment, the present invention's is not intended to limit to the explanation of embodiment
Range.One skilled in the art is by reference to explanation of the invention, without departing substantially from the spirit and scope of the present invention
In the case of, it is easy to carry out various modifications or embodiment can be combined, these also should be regarded as protection scope of the present invention.
Claims (4)
1. a kind of band-gap reference circuit, which is characterized in that including：
One start-up circuit closes start-up circuit after the startup and reference circuit work for completing the reference circuit；One core
Reference circuit using the curvature compensation of current-mode, while compensating for the first order temperature coefficient of circuit and advanced temperature coefficient；One
Operational amplifier circuit minimizes unbalance of system voltage using simple two-layer configuration.
2. a kind of band-gap reference circuit as described in claim 1, it is characterised in that：The start-up circuit by the 7th resistance R7,
5th PMOS tube PM5 and the tenth PMOS tube PM10 are constituted；The source electrode of PM10 pipes and the source electrode of PM5 pipes all meet supply voltage VDD；
The drain electrode of PM10 pipes is connected with the grid of one end of resistance R7 and PM5 pipes；Another termination VSS of R7.
3. a kind of band-gap reference circuit as described in claim 1, it is characterised in that：The core reference circuit is by the first PMOS
Pipe PM1, the second PMOS tube PM2, third PMOS tube PM3, the 4th PMOS tube PM4, the 6th PMOS tube PM6, the 7th PMOS tube PM7,
8th PMOS tube PM8, the 9th PMOS tube PM9, the first triode Q1, the second triode Q2, third transistor Q3, first resistor
R1, second resistance R2,3rd resistor R3, the 4th resistance R4, the 5th resistance R5, the 6th resistance R6 and an amplifier are constituted；PM1 pipes
Source electrode, the source electrode of PM2 pipes, the source electrode of PM3 pipes and PM4 pipes source electrode all connect supply voltage VDD；The grid of PM1 pipes is managed with PM2
Grid, the grid of PM3 pipes, the grid of PM4 pipes, the grid of PM10 pipes, the drain electrode of PM6 pipes, the inverting input of amplifier, resistance
One end of R5, the drain electrode of PM5 pipes, one end of resistance R3, Q1 pipes emitter be connected, vertex ticks X；The leakage of PM1 pipes
Pole connects the source electrode of PM6 pipes；The source electrode of the drain electrode connection PM7 pipes of PM2 pipes；The source electrode of the drain electrode connection PM8 pipes of PM3 pipes；PM4 is managed
Drain electrode connection PM9 pipes source electrode；The grid and PM9 of the grid of PM6 pipes and the output end of amplifier, the grid of PM7 pipes, PM8 pipes
The grid of pipe is connected；The drain electrode of PM7 pipes is same with one end of resistance R4, one end of resistance R1, one end of resistance R2 and amplifier
Phase input terminal is connected, vertex ticks Y；The drain electrode of PM8 pipes is managed with the other end of resistance R4, the other end of resistance R5, Q3
Emitter be connected；The drain electrode of PM9 pipes is connected with resistance R6, output end of the node as reference voltage V REF；Resistance R1
The other end connection Q2 pipes emitter；The other end of resistance R3, the collector of Q1 pipes, the base stage of Q1 pipes, Q2 pipes collector,
The base stage of Q2 pipes, the other end of resistance R2, the collector of Q3 pipes, the base stage of Q3 pipes and resistance R6 the other end all meet VSS.
4. a kind of band-gap reference circuit as described in claim 1, it is characterised in that：The operational amplifier circuit is by the 11st PMOS tube
PM11, the 12nd PMOS tube PM12, the 13rd PMOS tube PM13, the 14th PMOS tube PM14, the first NMOS tube NM1, second
NMOS tube NM2, third NMOS tube NM3 and the first capacitance C1 are constituted；The source electrode of PM11 pipes and the source electrode of PM12 pipes all meet VDD；
The grid of PM11 pipes is connected with the grid of PM12 pipes, is connected to bias voltage VP；The drain electrode of PM11 pipes and the source electrodes of PM13 pipes and
The source electrode of PM14 pipes is connected；Inverting input of the grid of PM13 pipes as amplifier；The grid of PM14 pipes is as the same of amplifier
Phase input terminal；The drain electrode of PM13 pipes is connected with the grid of the drain electrode of NM1 pipes, the grid of NM1 pipes and NM2 pipes；The leakage of PM14 pipes
Pole is connected with the grid of the drain electrode of NM2 pipes, one end of capacitance C1 and NM3 pipes；The other end of the drain electrode and capacitance C1 of PM12 pipes
It is connected with the drain electrode of NM3 pipes, output end of the node as amplifier；The source of the source electrode of NM1 pipes, the source electrode and NM3 pipes of NM2 pipes
Pole all meets VSS.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810559464.4A CN108762366A (en) | 2018-06-02 | 2018-06-02 | A kind of band-gap reference circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810559464.4A CN108762366A (en) | 2018-06-02 | 2018-06-02 | A kind of band-gap reference circuit |
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| Publication Number | Publication Date |
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| CN108762366A true CN108762366A (en) | 2018-11-06 |
Family
ID=64002201
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201810559464.4A Pending CN108762366A (en) | 2018-06-02 | 2018-06-02 | A kind of band-gap reference circuit |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112578841A (en) * | 2020-11-19 | 2021-03-30 | 北京智芯微电子科技有限公司 | Band gap reference circuit |
| CN115237195A (en) * | 2022-08-31 | 2022-10-25 | 中国电子科技集团公司第二十四研究所 | Voltage reference source |
| CN116860058A (en) * | 2023-07-31 | 2023-10-10 | 电子科技大学 | Band-gap reference circuit with current mode having high-order curvature compensation |
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| CN106774616A (en) * | 2016-12-22 | 2017-05-31 | 四川纳杰微电子技术有限公司 | A kind of high-order temperature compensated Low Drift Temperature reference source circuit |
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112578841A (en) * | 2020-11-19 | 2021-03-30 | 北京智芯微电子科技有限公司 | Band gap reference circuit |
| CN115237195A (en) * | 2022-08-31 | 2022-10-25 | 中国电子科技集团公司第二十四研究所 | Voltage reference source |
| CN115237195B (en) * | 2022-08-31 | 2023-08-22 | 中国电子科技集团公司第二十四研究所 | Voltage reference source |
| CN116860058A (en) * | 2023-07-31 | 2023-10-10 | 电子科技大学 | Band-gap reference circuit with current mode having high-order curvature compensation |
| CN116860058B (en) * | 2023-07-31 | 2024-03-19 | 电子科技大学 | Band-gap reference circuit with current mode having high-order curvature compensation |
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