TW201418930A - Bandgap reference voltage circuit and electronic device - Google Patents

Abstract

A bandgap reference voltage circuit is provided. The band gap reference voltage circuit includes a reference voltage generating unit, a current generating unit and an impedance providing unit. The current generating unit generates a first current with a positive temperature coefficient and is used for biasing the reference voltage generating unit. A voltage between two terminals of the impedance providing unit is the voltage with positive temperature coefficient, wherein the impedance providing unit has the characteristic with positive temperature coefficient, so that a second current flowing through the impedance providing unit has the characteristic with negative temperature coefficient, and thus the present disclosure may compensate a temperature cure for the reference voltage through the impedance providing unit.

Description

Bandgap reference voltage circuit and electronic device

The present invention relates to an energy bandgap reference voltage circuit, and more particularly to an energy bandgap reference voltage circuit having a compensated reference voltage.

The design of bandgap reference voltage source circuits is well known in the art and is designed to provide a voltage standard that is independent of temperature variations in the circuit.

The reference voltage of the bandgap reference voltage source is the voltage Vbe developed between the base and the emitter of a bipolar junction transistor (dual-carrier transistor) and the base of the other two bipolar transistor- A function of the difference (ΔVbe) of the emitter voltage Vbe. The base-emitter voltage Vbe of the first bipolar transistor has a negative temperature coefficient, or the base-emitter voltage Vbe will decrease as the temperature increases. The differential voltage ΔVbe of the other two bipolar transistors will have a positive temperature coefficient, which means that the differential base-emitter voltage ΔVbe also increases as the temperature rises. The reference voltage independent of the temperature of the bandgap voltage reference source is adjusted by scaling the differential base-emitter voltage ΔVbe and summing it with the base-emitter voltage Vbe of the first bipolar transistor. .

U.S. Patent Application Serial No. 2006/0043957 discloses an energy bandgap reference voltage generating circuit for finely adjusting a reference voltage by using a resistor. Referring to FIG. 1A and FIG. 1B simultaneously, FIG. 1A is a schematic diagram of a conventional bandgap reference voltage circuit. FIG. 1B is a graph of temperature and voltage of a reference voltage. The conventional bandgap reference voltage circuit 100 includes a plurality of P-type transistors, a plurality of resistors, a plurality of bi-carrier junction transistors, and an amplifier. The conventional bandgap reference voltage circuit 100 The temperature profile of the reference voltage VREF' is fine-tuned by adding some resistors, that is, the temperature profile of the reference voltage VREF' is compensated from the curve 20 to the curve 21. However, the previous case has the worry of large power consumption and large layout area.

Embodiments of the present invention provide a band gap reference voltage circuit, and the band gap reference voltage circuit includes a reference voltage generating unit, a current generating unit, and an impedance providing unit. The reference voltage generating unit is configured to output a reference voltage. The current generating unit is electrically connected to the reference voltage generating unit, the current generating unit generates a first current having a positive temperature coefficient, and is configured to bias the reference voltage generating unit. The impedance providing unit is electrically connected between the reference voltage generating unit and the current generating unit, and the voltage across the impedance providing unit is a voltage having a positive temperature coefficient, wherein the impedance providing unit has a characteristic of a positive temperature coefficient, so that the impedance providing unit flows through The second current has a negative temperature coefficient characteristic, and the impedance providing unit compensates the temperature curve of the reference voltage.

In one embodiment of the present invention, the temperature curve of the compensated reference voltage is used to compensate the second-order temperature curve of the reference voltage to a third-order temperature curve.

In one embodiment of the present invention, the reference voltage generating unit includes a first P-type transistor, a second P-type transistor, a first resistor, a second resistor, and an amplifier. The source of the first P-type transistor is coupled to the system voltage. The source of the second P-type transistor is coupled to the system voltage, the gate is coupled to the gate of the first P-type transistor, and the drain of the first P-type transistor outputs a reference voltage, wherein the first P-type transistor is subjected to the first current bias Pressurization, while the drain of the second P-type transistor outputs a reference current having a positive temperature coefficient. One end of the first resistor is coupled to the drain of the first P-type transistor. One end of the second resistor is coupled to the second P type The bungee of the crystal. The output of the amplifier is coupled to the gate of the second P-type transistor, the positive input end of which is coupled to the other end of the first resistor, and the negative input end of the amplifier is coupled to the other end of the second resistor, wherein the amplifier is configured to The voltage at the other end of the first resistor is substantially the same as the voltage at the other end of the second resistor.

In one embodiment of the invention, the second resistor has a negative temperature coefficient characteristic for adjusting the temperature profile of the reference voltage.

In one embodiment of the invention, the current generating unit includes a third resistor, a first bipolar junction transistor, and a second bipolar junction transistor. One end of the third resistor is coupled to the other end of the first resistor, wherein a voltage across the third resistor is a voltage of a positive temperature coefficient for generating a first current having a positive temperature coefficient. The emitter of the first bipolar junction transistor is coupled to the other end of the third resistor, and the collector is coupled to the ground voltage. The emitter of the second bipolar junction transistor is coupled to the other end of the second resistor, the collector of which is coupled to the ground voltage, and the base of which is coupled to the base of the first bipolar junction transistor.

In one embodiment of the invention, the impedance providing unit includes a fourth resistor. One end of the fourth resistor is coupled to the other end of the second resistor, and the other end of the fourth resistor is coupled to the source of the second bipolar junction transistor, wherein the fourth resistor has a positive temperature coefficient characteristic, and the fourth resistor has two The voltage across the end has the same value and positive temperature coefficient as the voltage across the third resistor.

In one embodiment of the present invention, the fourth resistor is configured to generate a second current having a negative temperature coefficient, and the temperature curve of the reference voltage is compensated by the impedance value of the fourth resistor.

In one embodiment of the present invention, the temperature curve of the compensated reference voltage is used to compensate the second-order temperature curve of the reference voltage to a third-order temperature curve.

Embodiments of the present invention further provide an electronic device including a bandgap reference voltage circuit, a signal processing circuit, and a load. The bandgap reference voltage circuit is used to provide a reference voltage. The signal processing circuit is coupled to the bandgap reference voltage circuit, and the signal processing circuit receives the reference voltage for signal processing and outputting the received input signal. The load is coupled to the signal processing circuit, and the load receives the output signal output by the signal processing circuit. The bandgap reference voltage circuit includes a reference voltage generating unit, a current generating unit, and an impedance providing unit.

In summary, the band gap reference voltage circuit and the electronic device proposed by the embodiments of the present invention introduce an impedance providing unit between the reference voltage generating unit and the current generating unit, and the impedance providing unit itself has a positive temperature coefficient. The characteristic and the voltage across the impedance providing unit are voltages having a positive temperature coefficient, so that the second current flowing through the impedance providing unit has a negative temperature coefficient characteristic, and the impedance providing unit compensates the temperature curve of the reference voltage. Accordingly, the present disclosure can compensate the second-order temperature profile of the reference voltage to the third-order temperature profile to improve the stability of the reference voltage in the face of temperature variation.

The detailed description of the present invention and the accompanying drawings are to be understood by the claims The scope is subject to any restrictions.

Various illustrative embodiments are described more fully hereinafter with reference to the accompanying drawings. However, the inventive concept may be embodied in many different forms and should not be construed as being limited to Illustrative embodiments set forth in the description. Rather, these exemplary embodiments are provided so that this invention will be in the In the drawings, the size and relative sizes of layers and regions may be exaggerated for clarity. Similar numbers always indicate similar components.

It will be understood that, although the terms first, second, third, etc. may be used herein to describe various elements, such elements are not limited by the terms. These terms are used to distinguish one element from another. Thus, a first element discussed below could be termed a second element without departing from the teachings of the inventive concept. As used herein, the term "and/or" includes any of the associated listed items and all combinations of one or more.

[Embodiment of Bandgap Reference Voltage Circuit]

Please refer to FIG. 2. FIG. 2 is a block diagram of an energy bandgap reference voltage circuit according to an embodiment of the invention. As shown in FIG. 2, the bandgap reference voltage circuit 200 includes a reference voltage generating unit 210, a current generating unit 220, and an impedance providing unit 230. The current generating unit 220 is electrically connected to the reference voltage generating unit 210 , and the impedance providing unit 230 is electrically connected between the reference voltage generating unit 210 and the current generating unit 220 .

The reference voltage generating unit 210 receives a system voltage and outputs a reference voltage VREF, wherein the reference voltage VREF has a non-linear temperature coefficient. The current generating unit 220 generates a first current I1, wherein the first current I1 has a characteristic of a positive temperature coefficient, and the first current I1 is used to bias the reference voltage generating unit 210. The two ends of the impedance providing unit 230 are voltages having a positive temperature coefficient, and the impedance providing unit 230 itself has a characteristic of a positive temperature coefficient such that the second current I2 flowing through the impedance providing unit 230 has a characteristic of a negative temperature coefficient, Wherein the impedance providing unit 230 can Therefore, a resistor having a positive temperature coefficient or another component capable of providing an impedance and having a positive temperature coefficient is not limited to the embodiment. Therefore, the temperature profile of the reference voltage VREF can be compensated by the impedance providing unit 230. In other words, the present disclosure can compensate the second-order temperature curve of the reference voltage VREF to a third-order temperature curve. .

Incidentally, the positive temperature coefficient described in this paper indicates that the physical quantity (such as voltage value, current value or resistance value) is proportional to the temperature, that is, when the temperature rises or falls, the physical quantity will follow The temperature rises or falls; the negative temperature coefficient described herein indicates that the physical quantity is inversely proportional to the temperature, that is, when the temperature rises or falls, the physical quantity decreases or rises with temperature. What follows is to further explain the working principle of the bandgap reference voltage circuit 200.

In the present embodiment, in the case where the impedance providing unit 230 is not added, the reference voltage VREF output by the reference voltage generating unit 210 is a voltage of a nonlinear temperature coefficient, that is, a voltage having a second-order temperature coefficient. Through the appropriate selection and configuration of the impedance providing unit 230, the impedance providing unit 230 can introduce a second current I2 having a negative temperature coefficient to the bandgap reference voltage circuit 200 of the embodiment, so that the designer can adjust the impedance providing unit 230. The impedance value is provided to compensate the temperature curve of the reference voltage VREF, that is, the second-order temperature curve of the reference voltage VREF is compensated to a third-order temperature curve, so that the reference voltage VREF can be more stable in the face of temperature variation.

It should be noted that the impedance providing unit 230 in this embodiment must have the characteristics of a positive temperature coefficient, and the voltage across the impedance providing unit 230 must also have the characteristics of a positive temperature coefficient. For convenience of explanation, the positive temperature coefficient of the impedance providing unit 230 is set to the first slope m1, and the impedance providing unit The positive temperature coefficient of the cross-pressure at both ends of 230 is set to the second slope m2. In order to make the second current I2 flowing through the impedance providing unit 230 have a negative temperature coefficient, it should be understood by those skilled in the art that in the present embodiment, the second slope m2 must be greater than the first slope m1, thus The second current I2 will have the characteristic of a negative temperature coefficient. Then, since the current value and the temperature coefficient of the second current I2 directly affect the reference voltage VREF output by the bandgap reference voltage circuit 200, the designer can design the impedance providing unit 230 according to the circuit design requirement or the process requirement. That is, the magnitude of the impedance value provided by the impedance providing unit 230 and its temperature coefficient can be selected.

In order to explain in more detail the operational flow of the bandgap reference voltage circuit of the present disclosure, at least one of the following embodiments will be further described.

In the following various embodiments, portions different from the above-described embodiment of Fig. 2 will be described, and the remaining omitted portions are the same as those of the above-described embodiment of Fig. 2. In addition, for the sake of convenience, like reference numerals or numerals indicate similar elements.

[Another embodiment of the bandgap reference voltage circuit]

Please refer to FIG. 3. FIG. 3 is a schematic diagram of a detailed circuit of an energy bandgap reference voltage circuit according to an embodiment of the invention. As shown in the embodiment of FIG. 3, the reference voltage generating unit 210 includes a first P-type transistor M1, a second P-type transistor M2, a first resistor R1, a second resistor R2, and an amplifier OP. The current generating unit 220 includes a third resistor R3, a first bipolar junction transistor Q1 and a second bipolar junction transistor Q2. The impedance providing unit 230 includes a fourth resistor R4.

The source of the first P-type transistor M1 is coupled to the system voltage VDD. The source of the second P-type transistor M2 is coupled to the system voltage VDD, and the second P-type The gate of the transistor M2 is coupled to the gate of the first P-type transistor M1, and the drain of the second P-type transistor M2 outputs a reference voltage VREF. One end of the first resistor R1 is coupled to the drain of the first P-type transistor M1. One end of the second resistor R2 is coupled to the drain of the second P-type transistor M2. The output terminal of the amplifier OP is coupled to the gate of the second P-type transistor, the positive input terminal of the amplifier OP is coupled to the other end of the first resistor R1, and the negative input terminal of the amplifier OP is coupled to the second resistor R2. One end.

One end of the third resistor R3 is coupled to the other end of the first resistor R1, and the emitter of the first bipolar junction transistor Q1 is coupled to the other end of the third resistor R3, the first bipolar junction transistor The collector of Q1 is coupled to the ground voltage GND. The emitter of the second bipolar junction transistor Q2 is coupled to the other end of the second resistor R2, the collector of the second bipolar junction transistor Q2 is coupled to the ground voltage GND, and the second bipolar carrier is connected. The base of the surface transistor Q2 is coupled to the base of the first bipolar junction transistor. In an implementation, the emitter area of the first bipolar junction transistor Q1 is The second bipolar junction transistor Q2 has eight times the emitter area. One end of the fourth resistor R4 is coupled to the other end of the second resistor R2, and the other end of the fourth resistor R4 is coupled to the source of the second bipolar junction transistor Q2.

In this embodiment, the amplifier OP causes the voltage at the other end of the first resistor R1 to be substantially the same as the voltage at the other end of the second resistor R2, that is, the voltages V1 and V2 are locked to substantially the same value, wherein the voltage V2 is the emitter-collector crossover voltage VEB2 of the second bipolar junction transistor Q2. The first P-type transistor M1 is biased to the saturation region by the first current I1, and the second P-type transistor M2 also operates in the saturation region, and the drain of the second P-type transistor M2 is output. Reference current IREF with positive temperature coefficient. Furthermore, the material of the second resistor R2 has a characteristic of a negative temperature coefficient, and the second The resistor R2 is used to adjust the temperature curve of the reference voltage VREF. The voltage across the third resistor R3 is a voltage of a positive temperature coefficient, and the third resistor R3 is used to generate a first current I1 of a positive temperature coefficient. The material of the fourth resistor R4 has a positive temperature coefficient, and the voltage across the fourth resistor R4 has the same value and positive temperature coefficient as the voltage across the third resistor R3. Furthermore, the fourth resistor R4 is used to generate the second current I2 having a negative temperature coefficient, and the temperature curve of the reference voltage VREF can be compensated by the impedance value of the fourth resistor R4. What will be further taught next is the action of the bandgap reference voltage circuit 300.

Please continue to refer to FIG. 3, because the emitter-collector voltages VEB1 (ie, voltage V3) and VEB2 (ie, voltage V2) of the first and second dual-carrier junction transistors Q1 and Q2 are both negative temperature coefficients. The voltage, and the amplifier OP will lock the voltage V1 of its positive input terminal to the same voltage value and temperature coefficient as the voltage V2 of the negative input terminal. Therefore, the voltage across the third resistor R3 is the difference between the voltage V1 and the voltage V3, that is, the voltage across the third resistor R3 is two shots in the bipolar junction transistors Q1 and Q2. The difference in collector voltage across the voltage (i.e., voltage VEB2-VEB1), as will be understood by those of ordinary skill in the art, voltage VEB2-VEB1 is a voltage having a positive temperature coefficient. Next, in the present embodiment, the third resistor R3 is a current having a positive temperature coefficient, so the first current I1 flowing through the third resistor R3 can be determined by the magnitude of the third resistor R3. The first current I1 is a current having a positive temperature coefficient, and the first current I1 is used to bias the reference voltage generating unit 210. Further, the first current I1 is used to bias the first P-type transistor M1. . Therefore, the second transistor also outputs a reference current IREF having a positive temperature coefficient. The relationship of the reference voltage VREF in this embodiment can be expressed by equation (1): VREF=IREF×R2+VEB2 (1)

The reference current IREF in equation (1) is a positive temperature coefficient current, the second resistor R2 is a negative temperature coefficient resistor, and the emitter-base voltage VEB2 (V2) is a voltage having a negative temperature coefficient. Therefore, the designer can adjust the reference voltage VREF to a voltage close to zero temperature coefficient by adjusting the value of the second resistor R2, that is, the reference voltage VREF is relatively stable when it changes within a temperature range. It should be noted that the present disclosure further configures a fourth resistor R4 between the reference voltage generating unit 210 and the current generating unit 220. Since one end of the fourth resistor is coupled to the voltage V2, and the other end of the fourth resistor R4 is coupled to the voltage V3, the voltage across the fourth resistor R4 is the same as the voltage across the third resistor R3. The voltage VEB2 is subtracted from the value of the voltage VEB1, so the voltage across the fourth resistor R4 is a voltage having a positive temperature coefficient. It should be noted that the material of the fourth resistor R4 in this embodiment has a positive temperature coefficient and the temperature coefficient thereof is greater than the temperature coefficient of the voltage VEB2-VEB1, so the second current I2 flowing through the fourth resistor R4 has a negative temperature coefficient. Current. The reference voltage VREF can be expressed by the following equation (2): VREF = IREF × R2 + VEB2 = (I2 + I3) × R2 + VEB2 (2)

As shown in the equation (2), the reference current IREF of the present embodiment is divided into two current components, that is, because of the presence of the fourth resistor R4, the reference current IREF is divided into a second current I2 and a third current I3, wherein the second The current I2 is a current of a negative temperature coefficient, and the third current is a current of a positive temperature coefficient. Therefore, the designer can adjust the current value and the temperature coefficient of the second current I2 by adjusting the resistance value of the fourth resistor R4 or selecting the temperature coefficient of the material of the fourth resistor R4 according to the circuit requirement or the process requirement, thereby compensating Reference voltage The voltage value of VREF or its temperature curve. In an embodiment, the disclosure can compensate the second-order temperature curve of the reference voltage VREF to the third-order temperature curve, thereby improving the stability of the reference voltage VREF in the face of temperature variation.

For convenience of description of the present embodiment, please refer to FIG. 3 and FIG. 4 at the same time. FIG. 4 is a temperature graph of a reference voltage according to another embodiment of the present invention. In Figure 4, the abscissa represents temperature in degrees Celsius ( ⁰ C). The ordinate represents the value of the reference voltage VREF in volts (V). The curve in FIG. 4 is a simulated graph of the bandgap reference circuit 300 at a temperature ranging from -40 degrees Celsius to 125 degrees Celsius. It can be seen from Fig. 4 that there is only 1.48 millivolts (mV) between the maximum and minimum voltages in the temperature range of -40 degrees Celsius to 125 degrees Celsius. Compared with the prior art, the present disclosure greatly improves the energy band. The gap reference voltage circuit 300 is stable in temperature variation.

In short, it is within the scope of the present invention to introduce a current having a negative temperature coefficient into the current component of the reference current and compensate the temperature curve of the reference voltage to a third-order temperature curve to stabilize the reference voltage. Inside.

[Embodiment of Electronic Apparatus]

Please refer to FIG. 5. FIG. 5 is a schematic diagram of an electronic device according to an embodiment of the invention. As shown in FIG. 5, the electronic device 500 includes a bandgap reference voltage circuit 510, a signal processing circuit 520, and a load 530. The bandgap reference voltage circuit 510 receives a system voltage VDD and is used to provide a reference voltage VREF. The signal processing circuit 520 is coupled to the bandgap reference voltage circuit 510, and the signal processing circuit 520 receives the reference voltage VREF transmitted from the bandgap reference voltage circuit 510 to operate. Then, the signal processing circuit 520 receives the received signal. The input signal VIN is signal processed and output. Load 530 The signal processing circuit 520 is coupled to the signal processing circuit 520, and the load 530 receives the output signal VOUT output by the signal processing circuit 520. The bandgap reference voltage circuit 510 can be one of the bandgap reference voltage circuits 200 and 300 in the above embodiments and is used to provide a stable reference voltage to the signal processing circuit 520. The electronic device 500 can be various types of electronic devices, such as handheld devices or mobile devices.

[Possible effects of the examples]

In summary, the band gap reference voltage circuit and the electronic device provided by the embodiments of the present invention introduce an impedance providing unit between the reference voltage generating unit and the current generating unit, and the impedance providing unit itself has a positive temperature coefficient characteristic. And the voltage across the impedance providing unit is a voltage having a positive temperature coefficient, so that the second current flowing through the impedance providing unit has a negative temperature coefficient characteristic, and the impedance providing unit compensates the temperature curve of the reference voltage. Accordingly, the present disclosure can compensate the second-order temperature profile of the reference voltage to the third-order temperature profile to improve the stability of the reference voltage in the face of temperature variation.

In at least one of the various embodiments of the present disclosure, power consumption and layout area can be saved compared to the prior art.

The above description is only an embodiment of the present invention, and is not intended to limit the scope of the invention.

100‧‧‧Knowledge bandgap reference voltage circuit

200, 300‧‧‧ bandgap reference voltage circuit

210‧‧‧reference voltage generating unit

220‧‧‧current generating unit

230‧‧‧Impact providing unit

500‧‧‧Electronic devices

510‧‧‧ Bandgap reference voltage circuit

520‧‧‧Signal Processing Unit

530‧‧‧load

GND‧‧‧ Grounding voltage

I1‧‧‧First current

I2‧‧‧second current

I3‧‧‧ third current

IREF‧‧‧reference current

M1‧‧‧First P-type transistor

M2‧‧‧Second P-type transistor

OP‧‧Amplifier

Q1‧‧‧First double carrier junction transistor

Q2‧‧‧Second double carrier junction transistor

R1‧‧‧first resistance

R2‧‧‧second resistance

R3‧‧‧ third resistor

R4‧‧‧fourth resistor

V1, V2, V3‧‧‧ voltage

VEB1, VEB2‧‧‧ shot-collective cross-pressure

VDD‧‧‧ system voltage

VREF, VREF'‧‧‧ reference voltage

VIN‧‧‧ input signal

VOUT‧‧‧ output signal

The present invention has been described in detail with reference to the accompanying drawings, in which FIG. 1A is a schematic diagram of a conventional bandgap reference voltage circuit.

FIG. 1B is a graph of temperature and voltage of a reference voltage.

2 is a block diagram of an energy bandgap reference voltage circuit in accordance with an embodiment of the present invention.

3 is a schematic diagram of a detailed circuit of an energy bandgap reference voltage circuit in accordance with an embodiment of the present invention.

4 is a temperature graph of a reference voltage in accordance with another embodiment of the present invention.

FIG. 5 is a schematic diagram of an electronic device in accordance with an embodiment of the present invention.

200‧‧‧ Bandgap reference voltage circuit

210‧‧‧reference voltage generating unit

220‧‧‧current generating unit

230‧‧‧Impact providing unit

I1‧‧‧First current

I2‧‧‧second current

VREF‧‧‧reference voltage

Claims (10)

An energy bandgap reference voltage circuit comprising: a reference voltage generating unit for outputting a reference voltage; a current generating unit electrically connected to the reference voltage generating unit, the current generating unit generating one of positive temperature coefficients a current, and is used to bias the reference voltage generating unit; and an impedance providing unit electrically connected between the reference voltage generating unit and the current generating unit, the impedance providing unit has a positive temperature across the two ends a voltage of a coefficient, wherein the impedance providing unit has a characteristic of a positive temperature coefficient such that a second current flowing through one of the impedance providing units has a negative temperature coefficient characteristic, and the impedance providing unit compensates a temperature profile of the reference voltage. The energy band gap reference voltage circuit of claim 1, wherein the temperature curve of the reference voltage is compensated for compensating the second-order temperature curve of the reference voltage into a third-order temperature curve. The energy band gap reference voltage circuit of claim 1, wherein the reference voltage generating unit comprises: a first P-type transistor, the source of which is coupled to a system voltage; and a second P-type transistor The source is coupled to the voltage of the system, the gate is coupled to the gate of the first P-type transistor, and the drain thereof outputs the reference voltage; a first resistor is coupled to the first P at one end thereof a drain of the type transistor; a second resistor having one end coupled to the drain of the second P-type transistor; and an amplifier having an output coupled to the gate of the second P-type transistor, The positive input end is coupled to the other end of the first resistor, and the negative input end is coupled to the other end of the second resistor, wherein the amplifier is configured to make the voltage of the other end of the first resistor and the second The voltage at the other end of the resistor is substantially the same, and the first P-type transistor is biased by the first current, and the drain output of the second P-type transistor has a reference current of a positive temperature coefficient. The bandgap reference voltage circuit of claim 3, wherein the second resistor has a negative temperature coefficient characteristic for adjusting a temperature profile of the reference voltage. The energy band gap reference voltage circuit of claim 3, wherein the current generating unit comprises: a third resistor, one end of which is coupled to the other end of the first resistor; and a first dual carrier junction a transistor, the emitter of which is coupled to the other end of the third resistor, the collector of which is coupled to a ground voltage; and a second dual carrier junction transistor whose emitter is coupled to the second resistor The other end is coupled to the ground voltage, and the base thereof is coupled to the base of the first bipolar junction transistor, wherein the voltage across the third resistor is a positive temperature coefficient voltage, Used to generate the first current having a positive temperature coefficient. The energy band gap reference voltage circuit of claim 5, wherein the impedance providing unit comprises: a fourth resistor, one end of which is coupled to the other end of the second resistor, and the other end of which is coupled to the first a source of the two-double carrier junction transistor, wherein the fourth resistor has a positive temperature coefficient characteristic, and a voltage across the fourth resistor has the same value and a positive voltage across the third resistor Temperature Coefficient. The energy band gap reference voltage circuit of claim 6, wherein the fourth resistor is configured to generate the second current having a negative temperature coefficient, and the reference voltage is compensated by the impedance value of the fourth resistor Temperature curve. The energy band gap reference voltage circuit according to claim 7, wherein the temperature curve of the reference voltage is compensated for compensating the second-order temperature curve of the reference voltage into a third-order temperature curve. An electronic device comprising: a bandgap reference voltage circuit for providing a reference voltage; a signal processing circuit coupled to the bandgap reference voltage circuit, the signal processing circuit receiving the reference voltage for Receiving an input signal for signal processing and outputting; and a load coupled to the signal processing circuit, the load receiving an output signal output by the signal processing circuit, wherein the bandgap reference voltage circuit comprises: a reference voltage a generating unit for outputting a reference voltage; a current generating unit electrically connected to the reference voltage generating unit, the current generating unit generating a first current having a positive temperature coefficient for biasing the reference voltage generating unit And an impedance providing unit electrically connected between the reference voltage generating unit and the current generating unit, the voltage across the impedance providing unit is a voltage having a positive temperature coefficient, wherein the impedance providing unit has a positive temperature coefficient a characteristic that causes a second current flowing through one of the impedance providing units to have a negative temperature coefficient characteristic Providing means to compensate for the impedance of the reference voltage of the temperature profile. The energy band gap reference voltage circuit according to claim 9, wherein the temperature curve of the reference voltage is compensated for compensating the second-order temperature curve of the reference voltage into a third-order temperature curve.