CN108736838A - A kind of novel F classes power amplifier match circuit that higher hamonic wave is controllable - Google Patents
A kind of novel F classes power amplifier match circuit that higher hamonic wave is controllable Download PDFInfo
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- CN108736838A CN108736838A CN201710246748.3A CN201710246748A CN108736838A CN 108736838 A CN108736838 A CN 108736838A CN 201710246748 A CN201710246748 A CN 201710246748A CN 108736838 A CN108736838 A CN 108736838A
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- 238000013461 design Methods 0.000 description 3
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- 239000010754 BS 2869 Class F Substances 0.000 description 2
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Classifications
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/56—Modifications of input or output impedances, not otherwise provided for
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
- H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
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Abstract
A kind of controllable novel F classes power amplifier match circuit of higher hamonic wave includes：Electrical length is（For the carrier wavelength under fundamental frequency）Transmission line T11；It is presented under higher hamonic wave respectively frequencyOpen stub T2‑Tn；With open stub T2‑TnConstitute the closed stub T of resonance under fundamental frequency2 *‑Tn *；Connect stub T12And 50 ohm of output impedance；This structure has saved the material of circuit and required space, has far reaching significance for the integrated level for reducing circuit cost and improving circuit.
Description
Technical field
The present invention relates to the controllable novel F classes power amplifiers in wireless communication power amplifier technology field more particularly to a kind of higher hamonic wave
Match circuit.
Background technology
Currently, with the further development of mobile communication system, it is logical that high efficiency power amplifier can become the following multi-standard
Believe the crucial composition part of terminal.Meanwhile the demand with wireless telecommunication system to high-efficiency radio-frequency power amplifier gradually increases
Add, the working efficiency for how improving power amplifier has become an important topic.To improve efficiency, researcher will a large amount of essences
Power is absorbed on the operating mode of amplifier, such as D classes, E classes, F classes and inverse F power-like amplifiers.F classes and inverse F two kinds of moulds of class
The high efficiency power amplifier of formula is becoming research focus in recent years since theoretical efficiency can reach 100%.
General F power-like amplifiers are matched by the transistor, harmonic controling circuit and output impedance of fundamental frequency being sequentially connected
The several module compositions of circuit.For general F power-like amplifiers, the even-order harmonic of signal is matched to by harmonic controling circuit
The drain electrode end of transistor is in short-circuit condition, and the drain electrode end that odd harmonic is matched to transistor is in open-circuit condition.To make drain electrode
End electric current shows as half-sine wave form, and voltage is then square, and in the ideal case, and voltage and electric current are in time
Non-overlapping region.In this way, ideal F power-like amplifiers just can realize 100% working efficiency.Actual F power-like amplifiers
In design, we are general only to consider second harmonic and triple-frequency harmonics.Classical F power-like amplifiers（Only triple-frequency harmonics controls）'s
Circuit diagram is as shown in Figure 1.
So in order to meet the requirement of high efficiency power amplifier, in conjunction with the design principle of F power-like amplifiers, controllably
The F power-like amplifiers of higher hamonic wave processed are designed to a popular research field.
The basic principle block diagram of the F power-like amplifiers of traditional higher hamonic wave control, as shown in Figure 2.Transmission line T2-Tn
It is made of n-1 root open stubs.Transmission line T11Electrical length be（For the carrier wavelength under fundamental frequency）.Therefore,
If transmission line T2-TnElectrical length be, then the odd times seen in transistor drain are humorous
Open-circuit condition is presented in wave, and short-circuit condition is presented under even-order harmonic, meets the requirement of higher hamonic wave control.Transmission line T12So that
Impedance is the form of R+jX under fundamental frequency.
Therefore, the F power-like amplifier structures of above-mentioned higher hamonic wave control are compared compared to traditional F power-like amplifiers,
Although increasing the complexity of circuit, effective control is realized for higher hamonic wave, it is humorous without contenting just to 2,3 times
The control of wave.Between this, transistor drain voltage and the overlapping region smaller of electric current in time, working efficiency higher can be with
Close to 100%.
In recent years, the research of the F power-like amplifiers of higher hamonic wave control is just in the starting stage.Document [1] is to warp
The F power-like amplifiers of allusion quotation accurately explain in detail.Document [2] is the circuit knot that Kazuhiko Honjo are proposed
Structure.A kind of circuit that present invention combination Kazuhiko Honjo are proposed, it is proposed that novel F classes power amplifier that higher hamonic wave is controllable
With circuit design method.This circuit more saves material and space compared to the Kazuhiko Honjo circuits proposed, right
There is far reaching significance in reducing circuit cost and improving circuit level.
【Bibliography】
[1] Raab .FH, " Class-F power amplifiers with maximally flat waveforms, "
IEEE Trans MTT 1997;45(11);2007-12。
[2] Kazuhiko Honjo, " A simple circuit synthesis method for microwave
class-F ultrahigh efficiencyamplifiers with reactance-compensation circuits”
Solid-state Electronics 44 (2000) 1477-1482。
Invention content
For problem existing in the prior art, the present invention is improved the Kazuhiko Honjo circuits proposed,
Innovative proposes a kind of new structure.This structure has saved the material of circuit and required space, for reduce circuit at
This and the integrated level for improving circuit have far reaching significance.
A kind of novel F classes power amplifier match circuit that higher hamonic wave is controllable, physical circuit are as shown in Figure 4.It is characterized in that：
Match circuit includes：Electrical length is（For the carrier wavelength under fundamental frequency）Transmission line T11；In higher hamonic wave
It is presented under respective frequencyOpen stub T2-Tn；With open stub T2-TnThe short circuit for constituting resonance under fundamental frequency is short
Transversal T2 *-Tn *；Connect stub T12And 50 ohm of output impedance.
High efficiency can control the circuit diagram of the novel F classes power amplifier match circuit of higher hamonic wave as shown in Figure 4.If strange
Under subharmonic：T3, T5……T(2n+1)It is 0 in the impedance of A, but due to transmission line T11Electrical length be（For fundamental frequency
Under carrier wavelength）, then basisThe odd harmonic impedance of the impedance operator of transmission line, transistor drain output end is infinite
Greatly, meet the resistance requirements of classics F power-like amplifiers.Similar, if under even-order harmonic, T2, T4…..T(2n+1)In the resistance of A
Resist and is, but due to transmission line T11Electrical length be（For the carrier wavelength under fundamental frequency）, then basisTransmission
The even-order harmonic impedance of the impedance operator of line, transistor drain output end is 0, and the impedance for meeting classics F power-like amplifiers is wanted
It asks.If under fundamental frequency, closed stub T is constructed2 *-Tn *So that itself and open stub T2-TnFirst-harmonic resonance is formed, because
Open-circuit condition is presented in A points in this.Then transmission line T11And T12And output resistance constitutes the impedance conditions of fundamental frequency：。
According to above-mentioned impedance conditions, the open stub T of the circuit2-TnSpecific electrical length be：,（For the carrier wavelength under fundamental frequency）.And due to the short circuit of the circuit
Stub T2 *-Tn *With the open stub T of the circuit2-TnThe resonance under fundamental frequency is constituted, therefore is led what A points were presented
It is 0 to receive, i.e.,(It is the open stub T of the circuit2-TnIn the corresponding admittance of A points,It is institute
Show the closed stub T of circuit2 *-Tn *In the corresponding admittance of A points).Therefore：
（1）
I.e.：
（2）
Here according to, obtain：
（3）
Due to, and.So：
（4）
Here, the closed stub T of this circuit2 *-Tn *Electrical length L2In the circuit proposed compared to Kazuhiko Honjo
Open stub T2 *-Tn *Electrical length, it can be appreciated that：
(5)
A kind of F class power amplifier match circuits that higher hamonic wave is controllable pass through open stub T2 *-Tn *Change closed stub into
T2 *-Tn *, while keeping F power-like amplifier high efficiency features, the material of circuit and required space have been saved, for drop
Low circuit cost and the integrated level for improving circuit have far reaching significance.
Description of the drawings
Fig. 1 is classical F power-like amplifiers（Only triple-frequency harmonics controls）Circuit diagram；
Fig. 2 is the circuit diagram for the F class power amplifier Match circuits methods that traditional high efficiency can control higher hamonic wave；
Fig. 3 is the functional block diagram for the circuit that Kazuhiko Honjo are proposed；
Fig. 4 is a kind of circuit diagram of the controllable novel F classes power amplifier match circuit of higher hamonic wave；
Fig. 5 is a kind of specific implementation mode of the controllable novel F classes power amplifier match circuit of higher hamonic wave.
Specific implementation mode
As shown in figure 5, a kind of novel F classes power amplifier match circuit of higher hamonic wave controllably includes：Including power amplification structure,
The input terminal of the power amplification structure is connected with input matching network and drive signal, and output end is connected with output pair net
Network, it is characterised in that：The output matching network includes：Electrical length is（For the carrier wavelength under fundamental frequency）Biography
Defeated line T11；It is presented under higher hamonic wave respectively frequencyOpen stub T2-Tn；With open stub T2-TnConstitute fundamental wave
The closed stub T of resonating at frequencies2 *-Tn *；Connect stub T12And 50 ohm of output impedance.
Claims (1)
1. a kind of controllable novel F classes power amplifier match circuit of higher hamonic wave, it is characterised in that：
Match circuit includes：Electrical length is（For the carrier wavelength under fundamental frequency）Transmission line T11；In higher hamonic wave
It is presented under respective frequencyOpen stub T2-Tn；With open stub T2-TnThe short circuit for constituting resonance under fundamental frequency is short
Transversal T2 *-Tn *；Connect stub T12And 50 ohm of output impedance.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710246748.3A CN108736838A (en) | 2017-04-16 | 2017-04-16 | A kind of novel F classes power amplifier match circuit that higher hamonic wave is controllable |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710246748.3A CN108736838A (en) | 2017-04-16 | 2017-04-16 | A kind of novel F classes power amplifier match circuit that higher hamonic wave is controllable |
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| Publication Number | Publication Date |
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| CN108736838A true CN108736838A (en) | 2018-11-02 |
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Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6396348B1 (en) * | 1999-10-06 | 2002-05-28 | Nec Corporation | Circuit for dealing with higher harmonics and circuit for amplifying power efficiency |
| JP2003234626A (en) * | 2002-02-12 | 2003-08-22 | Campus Create Co Ltd | Higher harmonic processing circuit and amplifier circuit using the same |
| JP2008113402A (en) * | 2006-05-09 | 2008-05-15 | Mitsubishi Electric Corp | Amplifier |
| CN101667829A (en) * | 2008-09-01 | 2010-03-10 | 三菱电机株式会社 | Voltage controlled oscillator, single-chip microwave integrated circuit and high-frequency wireless apparatus |
| JP2014116782A (en) * | 2012-12-10 | 2014-06-26 | Mitsubishi Electric Corp | High frequency amplifier |
| CN206807409U (en) * | 2017-04-16 | 2017-12-26 | 天津大学（青岛）海洋工程研究院有限公司 | A kind of controllable new F classes power amplifier match circuit of higher hamonic wave |
-
2017
- 2017-04-16 CN CN201710246748.3A patent/CN108736838A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6396348B1 (en) * | 1999-10-06 | 2002-05-28 | Nec Corporation | Circuit for dealing with higher harmonics and circuit for amplifying power efficiency |
| JP2003234626A (en) * | 2002-02-12 | 2003-08-22 | Campus Create Co Ltd | Higher harmonic processing circuit and amplifier circuit using the same |
| JP2008113402A (en) * | 2006-05-09 | 2008-05-15 | Mitsubishi Electric Corp | Amplifier |
| CN101667829A (en) * | 2008-09-01 | 2010-03-10 | 三菱电机株式会社 | Voltage controlled oscillator, single-chip microwave integrated circuit and high-frequency wireless apparatus |
| JP2014116782A (en) * | 2012-12-10 | 2014-06-26 | Mitsubishi Electric Corp | High frequency amplifier |
| CN206807409U (en) * | 2017-04-16 | 2017-12-26 | 天津大学（青岛）海洋工程研究院有限公司 | A kind of controllable new F classes power amplifier match circuit of higher hamonic wave |
Non-Patent Citations (1)
| Title |
|---|
| KAZUHIKO HONJO: ""A simple circuit synthesis method for microwave class-F ultra-high-efficiency amplifiers with reactance-compensation circuits"", 《SOLID-STATE ELECTRONICS》, vol. 44, no. 8, pages 1478 - 1480 * |
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