CN204290894U - A kind of high-efficiency double-frequency band F power-like amplifier - Google Patents
A kind of high-efficiency double-frequency band F power-like amplifier Download PDFInfo
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- CN204290894U CN204290894U CN201420778651.9U CN201420778651U CN204290894U CN 204290894 U CN204290894 U CN 204290894U CN 201420778651 U CN201420778651 U CN 201420778651U CN 204290894 U CN204290894 U CN 204290894U
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Abstract
The utility model discloses a kind of high-efficiency double-frequency band F power-like amplifier, wherein, transistor output is made up of high frequency band harmonic controling circuit, low-frequency band harmonic wave regulating circuit, double frequency-band DC bias circuit and double frequency-band impedance of fundamental frequency match circuit; High frequency band harmonic controling circuit is made up of the high low-impedance line of connecting and composite right/left-handed transmission line CRLH-TL in parallel; Low-frequency band harmonic wave regulating circuit is made up of high low-impedance line; The short circuit of double frequency-band DC bias circuit has the effect of low-frequency band harmonic controling; Double frequency-band impedance of fundamental frequency match circuit comprises high frequency, low-frequency band impedance of fundamental frequency match circuit.The utility model make use of composite right/left-handed transmission line CRLH-TL and has the double frequency-band DC bias circuit of harmonic control function, the complexity of harmonic controling circuit in conventional dual band F power-like amplifier can be effectively reduced, and consider the impact of parasitic component, thus effectively improve the operating efficiency of double frequency-band F power-like amplifier.
Description
Technical field
The utility model relates to radio communication power amplifier technology field, particularly relates to high efficiency double frequency-band F power-like amplifier.
Background technology
At present, along with further developing of mobile communication system, high efficiency multi-band power amplifier can become the crucial component part of following many standards multi-band communication terminal.Meanwhile, radio-frequency power amplifier is the maximum module that consumes energy in wireless transmission terminal.So the design of high efficiency multi-band power amplifier has become the focus of power amplifier research field.And high-efficiency double-frequency band power amplifier is a wherein the most basic class.
F power-like amplifier can reach 100% because of its ideal operation efficiency and receive a large amount of concerns.General single tape F power-like amplifier is by the transistor be connected successively, harmonic controling circuit and export the several module composition of impedance of fundamental frequency match circuit.For single tape F power-like amplifier, the drain electrode end that the even-order harmonic of signal is matched transistor by harmonic controling circuit is short-circuit condition, and drain electrode end odd harmonic being matched transistor is open-circuit condition.Thus making drain electrode end electric current show as half-sine wave form, voltage is then square, and in the ideal case, voltage and electric current be zero lap region in time.Like this, desirable F power-like amplifier just can realize the operating efficiency of 100%.In actual F power-like amplifier design, general only consideration second harmonic and triple-frequency harmonics.
So in order to meet the high efficiency requirement of dual-band power amplifier, in conjunction with the design principle of F power-like amplifier, the design of high-efficiency double-frequency band F power-like amplifier becomes a popular research field.
The general principle block diagram of traditional double frequency-band F power-like amplifier, as shown in Figure 1.Its output is made up of low-frequency band harmonic controling circuit, high frequency band harmonic controling circuit, double frequency-band impedance of fundamental frequency match circuit and double frequency-band DC bias circuit.Wherein, low-frequency band harmonic controling circuit and high frequency band harmonic controling circuit are formed by the transmission line of two L-type structures.To low-frequency band harmonic controling circuit, transmission line TL2 and transmission line TL4 is respectively used to the short circuit providing low-frequency band second harmonic and triple-frequency harmonics.Similar, to high frequency band harmonic controling circuit, transmission line TL6 and transmission line TL8 each provides the short circuit of high frequency band second harmonic and triple-frequency harmonics.Thus, regulate transmission line TL1 successively, TL3, TL5, the electrical length of TL7, just can realize the impedance conditions of the F power-like amplifier that the short circuit of transistor drain end low-frequency band second harmonic, triple-frequency harmonics open circuit, the short circuit of high frequency band second harmonic and triple-frequency harmonics are opened a way respectively.Double frequency-band impedance of fundamental frequency match circuit is used for the impedance matching of low-frequency band first-harmonic and high frequency band first-harmonic, to realize maximized power delivery.
Compare single tape F power-like amplifier, double frequency-band F power-like amplifier is owing to will realize the harmonic controling of two frequency bands, and its circuit complexity considerably increases, and which substantially increases the loss of power, thus the efficiency of circuit is also worsened thereupon.
On the other hand, in a practical situation, the effect that the parasitic component of transistor itself causes can destroy short-circuit condition corresponding to second harmonic and open-circuit condition corresponding to triple-frequency harmonics, thus affects the operating efficiency of F power-like amplifier.
Therefore, under the prerequisite considering parasitic component, reduce the circuit complexity of double frequency-band F power-like amplifier, reduce power loss, promoting the operating efficiency of power amplifier, is a very important problem.
In recent years, the research of double frequency-band F class power amplifier is in the infancy.Document [1], [2] two kinds of designing techniques based on the double frequency-band F power amplifier of single band F power-like amplifier are proposed, but harmonic controling network is all relatively complicated, therefore the power added efficiency (PAE) in two working bands is all relatively low, in addition on the one hand, to how, in double frequency-band, the parasitic parameter of the transistor of compensating band encapsulation is not discussed.Document [3] proposes a kind of harmonic controling scheme realizing single band F and multiband F power-like amplifier in monolithic integrated microwave circuit, although mention the compensation scheme of the parasitic parameter to transistor, but this method is also just applicable in the design of MMIC, to the Designing power amplifier of the transistor of band encapsulation, this kind of scheme has significant limitation.
List of references:
[1]R.Negra,A.Sadeve,S.Bensmida,and F.M.Ghannouchi,“Concurrent dual-band class-Fload coupling network for applications at 1.7and 2.14GHz,”IEEE Trans.Circuits Syst.II,Exp.Briefs,vol.55,no.3,pp.259–263,Mar.2008。
[2]P.Colantonio,F.Giannini,and R.Giofre,“A design technique for concurrent dual-bandharmonic tuned power amplifier,”IEEE Trans.Microw.Theory Techn.,vol.56,no.11,pp.2545–2555,Nov.2008。
[3]G.Nikandish,E.Babakrpur,and A.Medi,“A harmonic termi-nation technique for single-and multi-band high-efficiency class-F MMIC power amplifiers,”IEEE Trans.Microw.TheoryTechn.,vol.62,no.5,pp.1212–1220,May,2014。
[4]I.Lin,M.DeVincentis,C.Caloz,and T.Itoh,“Arbitrary dual-band components usingcomposite right/left-handed transmitt-ssion lines,”IEEE Trans.Microwave Theory Tech.,vol.52,pp.1142-1149,Apr.2004。
Utility model content
In order to overcome the too high and transistor parasitic of circuit complexity in prior art point graded effect exist caused by operating efficiency deterioration problem, the utility model provides a kind of high efficiency double frequency-band F power-like amplifier, under the prerequisite meeting double frequency-band transmission, effectively reduce the complexity of circuit, consider the impact of parasitic component on harmonic controling circuit simultaneously, thus reach the object of the operating efficiency promoting power amplifier.
A kind of high-efficiency double-frequency band F power-like amplifier that the utility model provides, wherein, transistor output is made up of high frequency band harmonic controling circuit, low-frequency band harmonic wave regulating circuit, double frequency-band DC bias circuit and double frequency-band impedance of fundamental frequency match circuit; Described high frequency band harmonic controling circuit is between transistor and low-frequency band harmonic wave regulating circuit, and described double frequency-band DC bias circuit is between low-frequency band harmonic wave regulating circuit and double frequency-band impedance of fundamental frequency match circuit; Described high frequency band harmonic controling circuit is made up of the high low-impedance line of connecting and composite right/left-handed transmission line CRLH-TL in parallel; Described low-frequency band harmonic wave regulating circuit is made up of high low-impedance line; Composite right/left-handed transmission line CRLH-TL in described high frequency band harmonic controling circuit provides the short circuit of high frequency band second harmonic and triple-frequency harmonics simultaneously; The microstrip circuit that low-frequency band second harmonic and triple-frequency harmonics short circuit can be provided is integrated with in described double frequency-band DC bias circuit, thus make this double frequency-band DC bias circuit have the effect of low-frequency band harmonic controling, described double frequency-band DC bias circuit, while providing harmonic controling, also provides the condition of first-harmonic open circuit and direct-current short circuit in two working bands; Described double frequency-band impedance of fundamental frequency match circuit comprises high frequency band impedance of fundamental frequency match circuit and low-frequency band impedance of fundamental frequency match circuit; Described high frequency band impedance of fundamental frequency match circuit is made up of the matching network of L-type, the matching network of described L-type comprises the transmission line that is connected in series with described low-frequency band impedance of fundamental frequency match circuit and the short circuit minor matters with described series-connected transmission line parallel, the characteristic impedance of the transmission line of described serial connection is 50 Ω, and the length of described short circuit minor matters is λ
1/ 4, wherein λ
1it is the operation wavelength that low-frequency band dfundamental-harmonic pair is answered.
The utility model is by the utilization of the phase-shift characterisitc to composite right/left-handed transmission line CRLH-TL and the mode that is integrated into by low-frequency band harmonic controling circuit in double frequency-band DC bias circuit, under the prerequisite realizing double frequency-band transmission, the complexity of the circuit part of short circuit harmonic controling in conventional dual band F power-like amplifier can be effectively reduced, consider parasitic component effect simultaneously, thus effectively improve the operating efficiency of double frequency-band F power-like amplifier.
Accompanying drawing explanation
Fig. 1 is the circuit theory diagrams of conventional dual band F power-like amplifier;
Fig. 2 is a kind of theory diagram of high-efficiency double-frequency band F power-like amplifier;
Fig. 3 is a kind of circuit theory diagrams of high-efficiency double-frequency band F power-like amplifier;
Fig. 4 (a) is the CRLH-TL structural representation in high frequency band harmonic controling circuit;
Fig. 4 (b) is the S21 simulation result of CRLH-TL;
Fig. 5 (a) is the circuit theory diagrams of the double frequency-band DC bias circuit with the effect of low-frequency band harmonic controling;
Fig. 5 (b) has the S21 parameters simulation result of the double frequency-band DC bias circuit of low-frequency band harmonic controling effect;
Fig. 6 is the schematic diagram of double frequency-band impedance of fundamental frequency match circuit.
Embodiment
In order to clearer explanation the technical solution of the utility model, below in conjunction with drawings and Examples, the utility model is described in further detail.For those of ordinary skill in the art, under the prerequisite not paying creative work, other accompanying drawing can also be obtained according to these accompanying drawings.
A kind of high-efficiency double-frequency band F power-like amplifier that the utility model provides, its theory diagram as shown in Figure 2, wherein, transistor input is made up of direct grid current biasing circuit and input impedance of fundamental frequency circuit, is primarily implemented in gain transfer maximum in two working bands.Transistor output is made up of high frequency band harmonic controling circuit, low-frequency band harmonic wave regulating circuit, the double frequency-band DC bias circuit with the effect of low-frequency band harmonic controling and double frequency-band impedance of fundamental frequency match circuit.
Figure 3 shows that low-frequency band first-harmonic f
1for 1.7GHz, high frequency band first-harmonic f
2for the schematic diagram of the high-efficiency double-frequency band F power-like amplifier of 2.14GHz.Described high frequency band harmonic controling circuit between transistor and low-frequency band harmonic wave regulating circuit, described in there is the double frequency-band DC bias circuit of low-frequency band harmonic controling effect between low-frequency band harmonic wave regulating circuit and double frequency-band impedance of fundamental frequency match circuit; Described high frequency band harmonic controling circuit is made up of the high low-impedance line of connecting and composite right/left-handed transmission line CRLH-TL in parallel; Described low-frequency band harmonic wave regulating circuit is made up of high low-impedance line; For fixing dual-frequency band operation frequency, the circuit of Fig. 3 except transistor all can provide second harmonic short circuit and triple-frequency harmonics open circuit point at the intrinsic drain electrode end of transistor to two operating frequencies; To high frequency band harmonic controling circuit, utilize the phase-shift characterisitc of composite right/left-handed transmission line CRLH-TL, make high frequency band harmonic controling circuit provide the short circuit of high frequency band second harmonic and triple-frequency harmonics simultaneously, regulate high low-impedance line to meet the impedance conditions of the F power-like amplifier of the second harmonic short circuit of transistor intrinsic drain electrode end high frequency band and triple-frequency harmonics open circuit.Described have in the double frequency-band DC bias circuit of low-frequency band harmonic controling effect be integrated with the circuit that low-frequency band short circuit is provided, thus make this double frequency-band DC bias circuit have the effect of low-frequency band harmonic controling, described double frequency-band DC bias circuit is while providing harmonic controling, the condition of first-harmonic open circuit and direct-current short circuit is also provided in two working bands, thus the direct current biasing of transistor drain end can be provided, the short circuit of low-frequency band second harmonic and triple-frequency harmonics can be provided again, regulate the high low-impedance line of high frequency band harmonic wave regulating circuit to meet the impedance conditions of the F power-like amplifier of the second harmonic short circuit of transistor intrinsic drain electrode end high frequency band and triple-frequency harmonics open circuit.Transistor parasitic parameter model comprises parasitic capacitance, stray inductance and encapsulation parasitic capacitance between transistor drain and source electrode.
Described double frequency-band impedance of fundamental frequency match circuit comprises high frequency band impedance of fundamental frequency match circuit and low-frequency band impedance of fundamental frequency match circuit, as shown in Figure 6, described high frequency band impedance of fundamental frequency match circuit is made up of the matching network of L-type, the matching network of described L-type comprises the transmission line that is connected in series with low-frequency band impedance of fundamental frequency match circuit and the short circuit minor matters with series-connected transmission line parallel, the characteristic impedance of the transmission line of described serial connection is 50 Ω, and the length of the transmission line of described parallel connection is λ
1/ 4, wherein λ
1it is the operation wavelength that low-frequency band dfundamental-harmonic pair is answered.This special structure can not destroy the low-frequency band impedance of fundamental frequency coupling of front end after can ensureing to insert high frequency band impedance of fundamental frequency match circuit, simultaneously, by the adjustment of the characteristic impedance to series-connected transmission line length in high frequency band impedance of fundamental frequency match circuit and transmission line in parallel, high frequency band impedance of fundamental frequency coupling can be realized.
Fig. 4 (a) is depicted as the structure of the composite right/left-handed transmission line CRLH-TL in the utility model higher frequency band harmonic controling circuit, and it can provide the short circuit of high frequency band second harmonic and triple-frequency harmonics.Specific implementation principle and method are described below:
Desirable CRLH-TL is connected in series by desirable right-handed transmission line RH-TL and desirable left hand transmission line LH-TL and forms.Left hand transmission line LH-TL has positive phase response, namely has the response that phase place is advanced.And right-handed transmission line RH-TL has negative phase response, namely there is the response of delayed phase.The combination of these characteristics makes composite right/left-handed transmission line CRLH-TL can produce the phase response of 90 ° at any two frequency places, namely at any two frequency places, the composite right/left-handed transmission line CRLH-TL electrical length be all equivalent under corresponding frequencies is the transmission line of 90 °.This characteristic of composite right/left-handed transmission line CRLH-TL can be applied in the design of dual band transmission line just.
Composite right/left-handed transmission line CRLH-TL is had unlimited undersized cellular construction cascade formed by N number of for operation wavelength.These cellular constructions are made up of lumped-parameter element.Its phase response and phase slope have following form by approximate processing:
Wherein, L
rand C
rthe electric capacity in the dynamic impedance component models of RH-TL and inductance respectively, L
land C
lthe electric capacity in the dynamic impedance component models of LH-TL and inductance respectively.
To second harmonic and the triple-frequency harmonics of high frequency band, i.e. the effect of 4.28GHz and 6.42GHz, composite right/left-handed transmission line CRLH-TL is all equivalent to the quarter wavelength impedance transducer under corresponding harmonic frequency.Therefore, the second harmonic of high frequency band and composite right/left-handed transmission line CRLH-TL phase response corresponding to triple-frequency harmonics elect-90 ° and-270 ° respectively as.Use lumped-parameter element to realize left hand transmission line LH-TL, use microstrip line to realize right-handed transmission line RH-TL.Use the design cycle listed in document [4], the utility model can calculate L
r, C
r, L
land C
land left-and-right-hand transmission line RH-TL microstrip line length l
1, l
2concrete numerical value.Use these concrete numerical value, carry out finely tuning in conjunction with ADS thus obtain final Optimal Parameters: C
l=0.5pF, L
l=2.4nH, l
1=19.1mm, l
2=21.2mm.The substrate that the utility model is selected is RT/Duroid, and its parameter is sheet metal thickness h=20mil, relative dielectric constant ε
r=2.2. can find out from the S21 simulation result of Fig. 4 (b), and to second harmonic and the triple-frequency harmonics of high frequency band, the composite right/left-handed transmission line CRLH-TL that the utility model designs all can provide the short circuit under corresponding frequencies.
Fig. 5 (a) is depicted as the schematic diagram of the double frequency-band DC bias circuit with the effect of low-frequency band harmonic controling.Wherein, λ
1low-frequency band first-harmonic f
1operation wavelength.In order to make DC offset voltage not interfere with dual band signal, then must make to look over from A point to double frequency-band DC bias circuit the impedance that presents at double frequency-band fundamental frequency f
1and f
2under be infinity, i.e. open-circuit condition.Meanwhile, the double frequency-band DC bias circuit with the effect of low-frequency band harmonic controling can also provide the short circuit of low-frequency band second harmonic and triple-frequency harmonics.λ in parallel
1/ 4 transmission lines and λ
1/ 8 transmission lines can provide the short circuit of low-frequency band first-harmonic and second harmonic respectively at B point, through series connection λ
1/ 4 transmission lines, provide open circuit point and short circuit at A point respectively to low-frequency band first-harmonic and second harmonic.Fan shaped transmission line in parallel provides high frequency band first-harmonic f at C point
2short circuit.By regulating the length l of the transmission line between B point and C point
3, open circuit point can be provided at A point to high frequency band first-harmonic.λ in parallel
1/ 12 transmission lines directly can provide the open circuit point of low-frequency band triple-frequency harmonics at A point.The S21 parameters simulation result by Fig. 5 (b) with the double frequency-band DC bias circuit of low-frequency band harmonic controling effect can be found out, the double frequency-band DC bias circuit with the effect of low-frequency band harmonic controling of the utility model design is to the second harmonic of low-frequency band and triple-frequency harmonics, short circuit under corresponding frequencies can be provided, simultaneously, at two double frequency-band frequency places, it also can provide the open circuit point required under relevant work frequency.
The component Model of transistor parasitic shown in Fig. 3 is by the parasitic capacitance C between transistor drain and source electrode
ds, stray inductance L
dwith encapsulation parasitic capacitance C
pthe pin network of composition is formed.Complete high frequency band harmonic controling circuit and there is the effect of low-frequency band harmonic controling the design of double frequency-band DC bias circuit after, the parasitic component model of binding crystal pipe, by the adjustment to the electrical length of high low-impedance line in high frequency band harmonic controling circuit, the short circuit of high frequency band second harmonic and triple-frequency harmonics open circuit point can be provided at the intrinsic drain electrode end of transistor.By the adjustment to the electrical length of high low-impedance line in low-frequency band harmonic wave regulating circuit, the short circuit of low-frequency band second harmonic and triple-frequency harmonics open circuit point can be provided at the intrinsic drain electrode end of transistor.Thus achieve the impedance conditions of F power-like amplifier in intrinsic drain electrode place of transistor.
Figure 6 shows that the schematic diagram of double frequency-band impedance of fundamental frequency match circuit.Double frequency-band impedance of fundamental frequency circuit is made up of low-frequency band impedance of fundamental frequency match circuit and high frequency band impedance of fundamental frequency match circuit.Low-frequency band impedance of fundamental frequency match circuit and high frequency band impedance of fundamental frequency match circuit are made up of the matching network of L-type.Wherein, λ
1for low-frequency band first-harmonic operation wavelength.By regulating the length l of the series transmission lines of the matching network of the L-type in low-frequency band impedance of fundamental frequency match circuit
4with the length l of parallel connection open circuit minor matters
5, the coupling of low-frequency band impedance of fundamental frequency can be realized.Because the characteristic impedance of the series transmission lines of the matching network transmission line of the L-type in high frequency band impedance of fundamental frequency match circuit is 50 Ω, the length of the length of parallel connection short circuit minor matters is λ
1/ 4, so the insertion of high frequency band impedance of fundamental frequency match circuit can not affect the match condition of the low-frequency band impedance of fundamental frequency match circuit completed.By regulating the length l of series transmission lines in high frequency band impedance of fundamental frequency match circuit
6with the characteristic impedance Z of parallel connection short circuit minor matters
02, high frequency band impedance of fundamental frequency coupling can be realized.
In actual design, transistor selects model to be the 10W GaN HEMT transistor of Cree CGH40010F.As follows to the concrete numerical value of the parasitic component that this transistor is provided by manufacturer: the parasitic capacitance C between transistor drain and source electrode
ds=1.2pF, stray inductance L
d=0.55nH, encapsulation parasitic capacitance C
p=0.2pF.
Although be described the utility model utility model by reference to the accompanying drawings above; but the utility model utility model is not limited to above-mentioned embodiment; above-mentioned embodiment is only schematic; instead of it is restrictive; those of ordinary skill in the art is under the enlightenment of the utility model utility model; when not departing from the utility model utility model aim, can also make a lot of distortion, these all belong within the protection of the utility model utility model.
Claims (1)
1. a high-efficiency double-frequency band F power-like amplifier, wherein, transistor output is made up of high frequency band harmonic controling circuit, low-frequency band harmonic wave regulating circuit, double frequency-band DC bias circuit and double frequency-band impedance of fundamental frequency match circuit; It is characterized in that:
Described high frequency band harmonic controling circuit is between transistor and low-frequency band harmonic wave regulating circuit, and described double frequency-band DC bias circuit is between low-frequency band harmonic wave regulating circuit and double frequency-band impedance of fundamental frequency match circuit;
Described high frequency band harmonic controling circuit is made up of the high low-impedance line of connecting and composite right/left-handed transmission line CRLH-TL in parallel;
Described low-frequency band harmonic wave regulating circuit is made up of high low-impedance line;
Composite right/left-handed transmission line CRLH-TL in described high frequency band harmonic controling circuit provides the short circuit of high frequency band second harmonic and triple-frequency harmonics simultaneously;
The microstrip circuit that low-frequency band second harmonic and triple-frequency harmonics short circuit can be provided is integrated with in described double frequency-band DC bias circuit, thus make this double frequency-band DC bias circuit have the effect of low-frequency band harmonic controling, described double frequency-band DC bias circuit, while providing harmonic controling, also provides the condition of first-harmonic open circuit and direct-current short circuit in two working bands;
Described double frequency-band impedance of fundamental frequency match circuit comprises high frequency band impedance of fundamental frequency match circuit and low-frequency band impedance of fundamental frequency match circuit; Described high frequency band impedance of fundamental frequency match circuit is made up of the matching network of L-type, the matching network of described L-type comprises the transmission line that is connected in series with described low-frequency band impedance of fundamental frequency match circuit and the short circuit minor matters with described series-connected transmission line parallel, the characteristic impedance of the transmission line of described serial connection is 50 Ω, and the length of described short circuit minor matters is λ
1/ 4, wherein λ
1it is the operation wavelength that low-frequency band dfundamental-harmonic pair is answered.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420778651.9U CN204290894U (en) | 2014-12-10 | 2014-12-10 | A kind of high-efficiency double-frequency band F power-like amplifier |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201420778651.9U CN204290894U (en) | 2014-12-10 | 2014-12-10 | A kind of high-efficiency double-frequency band F power-like amplifier |
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| Publication Number | Publication Date |
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| CN204290894U true CN204290894U (en) | 2015-04-22 |
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ID=52874020
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|---|---|---|---|
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104518742A (en) * | 2014-12-10 | 2015-04-15 | 天津大学 | High-efficiency double-frequency band F-type power amplifier |
| CN110048682A (en) * | 2019-04-17 | 2019-07-23 | 杭州电子科技大学富阳电子信息研究院有限公司 | A kind of broadband continuous type power amplifier and design method based on multiple stage secondary harmonic controling |
-
2014
- 2014-12-10 CN CN201420778651.9U patent/CN204290894U/en not_active Withdrawn - After Issue
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104518742A (en) * | 2014-12-10 | 2015-04-15 | 天津大学 | High-efficiency double-frequency band F-type power amplifier |
| CN104518742B (en) * | 2014-12-10 | 2018-02-23 | 天津大学 | A kind of high-efficiency double-frequency band F power-like amplifiers |
| CN110048682A (en) * | 2019-04-17 | 2019-07-23 | 杭州电子科技大学富阳电子信息研究院有限公司 | A kind of broadband continuous type power amplifier and design method based on multiple stage secondary harmonic controling |
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| AV01 | Patent right actively abandoned |
Granted publication date: 20150422 Effective date of abandoning: 20180223 |
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