CN108711579A - 制造具有区分开的p型和n型区架构的太阳能电池发射极区 - Google Patents

制造具有区分开的p型和n型区架构的太阳能电池发射极区 Download PDF

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Publication number
CN108711579A
CN108711579A CN201810311648.9A CN201810311648A CN108711579A CN 108711579 A CN108711579 A CN 108711579A CN 201810311648 A CN201810311648 A CN 201810311648A CN 108711579 A CN108711579 A CN 108711579A
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silicon
region
conductivity type
type
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林承笵
大卫·D·史密斯
邱泰庆
斯塔凡·韦斯特贝格
基兰·马克·特雷西
文卡塔苏布拉马尼·巴鲁
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Maikesheng Solar Energy Co ltd
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SunPower Corp
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
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    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
    • H10F10/146—Back-junction photovoltaic cells, e.g. having interdigitated base-emitter regions on the back side
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    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/14—Photovoltaic cells having only PN homojunction potential barriers
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    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
    • H10F10/164—Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells
    • H10F10/165—Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells the heterojunctions being Group IV-IV heterojunctions, e.g. Si/Ge, SiGe/Si or Si/SiC photovoltaic cells
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    • H10F10/00—Individual photovoltaic cells, e.g. solar cells
    • H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
    • H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
    • H10F10/164—Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells
    • H10F10/165—Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells the heterojunctions being Group IV-IV heterojunctions, e.g. Si/Ge, SiGe/Si or Si/SiC photovoltaic cells
    • H10F10/166—Photovoltaic cells having only PN heterojunction potential barriers comprising heterojunctions with Group IV materials, e.g. ITO/Si or GaAs/SiGe photovoltaic cells the heterojunctions being Group IV-IV heterojunctions, e.g. Si/Ge, SiGe/Si or Si/SiC photovoltaic cells the Group IV-IV heterojunctions being heterojunctions of crystalline and amorphous materials, e.g. silicon heterojunction [SHJ] photovoltaic cells
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    • H10F71/10—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material
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    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/10—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material
    • H10F71/103—Manufacture or treatment of devices covered by this subclass the devices comprising amorphous semiconductor material including only Group IV materials
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    • H10F71/00—Manufacture or treatment of devices covered by this subclass
    • H10F71/121—The active layers comprising only Group IV materials
    • H10F71/1221—The active layers comprising only Group IV materials comprising polycrystalline silicon
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    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/10—Semiconductor bodies
    • H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
    • H10F77/162—Non-monocrystalline materials, e.g. semiconductor particles embedded in insulating materials
    • H10F77/164—Polycrystalline semiconductors
    • H10F77/1642—Polycrystalline semiconductors including only Group IV materials
    • H—ELECTRICITY
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    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
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    • H10F77/30—Coatings
    • H10F77/306—Coatings for devices having potential barriers
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    • H10F77/30—Coatings
    • H10F77/306—Coatings for devices having potential barriers
    • H10F77/311—Coatings for devices having potential barriers for photovoltaic cells
    • H10F77/315—Coatings for devices having potential barriers for photovoltaic cells the coatings being antireflective or having enhancing optical properties
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    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/70—Surface textures, e.g. pyramid structures
    • H10F77/703—Surface textures, e.g. pyramid structures of the semiconductor bodies, e.g. textured active layers
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/546—Polycrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
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    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/548—Amorphous silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
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  • Photovoltaic Devices (AREA)
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  • Sustainable Energy (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
CN201810311648.9A 2013-12-20 2014-12-12 制造具有区分开的p型和n型区架构的太阳能电池发射极区 Pending CN108711579A (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US14/136,751 US9196758B2 (en) 2013-12-20 2013-12-20 Solar cell emitter region fabrication with differentiated p-type and n-type region architectures
US14/136,751 2013-12-20
CN201480056606.5A CN105794004B (zh) 2013-12-20 2014-12-12 制造具有区分开的p型和n型区架构的太阳能电池发射极区

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CN201480056606.5A Active CN105794004B (zh) 2013-12-20 2014-12-12 制造具有区分开的p型和n型区架构的太阳能电池发射极区

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US (4) US9196758B2 (https=)
EP (1) EP3084840B1 (https=)
JP (2) JP6476202B2 (https=)
KR (1) KR102397342B1 (https=)
CN (2) CN108711579A (https=)
AU (2) AU2014366256B2 (https=)
BR (1) BR112016014406B1 (https=)
CL (1) CL2016001559A1 (https=)
MX (1) MX359591B (https=)
MY (1) MY206809A (https=)
PH (1) PH12016501141A1 (https=)
SA (1) SA516371368B1 (https=)
SG (1) SG11201604593UA (https=)
TW (1) TWI643354B (https=)
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CN107004726A (zh) * 2014-09-19 2017-08-01 太阳能公司 具有区分开的p型和n型架构并且包含点状扩散的太阳能电池发射极区的制造
CN113394304A (zh) * 2021-07-22 2021-09-14 浙江爱旭太阳能科技有限公司 一种太阳能电池及其背面接触结构、电池组件及光伏系统
CN115513307A (zh) * 2022-08-31 2022-12-23 隆基绿能科技股份有限公司 背接触太阳能电池及其制备方法
CN115513309A (zh) * 2022-08-31 2022-12-23 隆基绿能科技股份有限公司 背接触太阳能电池及其制备方法
CN116190483A (zh) * 2022-09-08 2023-05-30 隆基绿能科技股份有限公司 一种背接触异质结太阳能电池及其制造方法
CN118213428A (zh) * 2024-05-21 2024-06-18 隆基绿能科技股份有限公司 一种背接触电池及其制造方法、光伏组件
US12402432B2 (en) 2021-07-22 2025-08-26 Zhejiang Aiko Solar Energy Technology Co., Ltd. Passivated contact structure and solar cell comprising the same, cell assembly, and photovoltaic system
US12568711B2 (en) 2022-08-31 2026-03-03 Longi Green Energy Technology Co., Ltd. Back-contact solar cell and preparation method therefor

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US9577134B2 (en) * 2013-12-09 2017-02-21 Sunpower Corporation Solar cell emitter region fabrication using self-aligned implant and cap
US9196758B2 (en) * 2013-12-20 2015-11-24 Sunpower Corporation Solar cell emitter region fabrication with differentiated p-type and n-type region architectures
KR101569417B1 (ko) * 2014-07-07 2015-11-16 엘지전자 주식회사 태양 전지
JP6272204B2 (ja) * 2014-10-02 2018-01-31 株式会社Ｓｏｋｅｎ 道路区画線情報取得装置
US9559245B2 (en) 2015-03-23 2017-01-31 Sunpower Corporation Blister-free polycrystalline silicon for solar cells
US9525083B2 (en) 2015-03-27 2016-12-20 Sunpower Corporation Solar cell emitter region fabrication with differentiated P-type and N-type architectures and incorporating a multi-purpose passivation and contact layer
US9502601B1 (en) 2016-04-01 2016-11-22 Sunpower Corporation Metallization of solar cells with differentiated P-type and N-type region architectures
USD822890S1 (en) 2016-09-07 2018-07-10 Felxtronics Ap, Llc Lighting apparatus
US10629758B2 (en) * 2016-09-30 2020-04-21 Sunpower Corporation Solar cells with differentiated P-type and N-type region architectures
US10141462B2 (en) 2016-12-19 2018-11-27 Sunpower Corporation Solar cells having differentiated P-type and N-type architectures
US10775030B2 (en) 2017-05-05 2020-09-15 Flex Ltd. Light fixture device including rotatable light modules
USD872319S1 (en) 2017-08-09 2020-01-07 Flex Ltd. Lighting module LED light board
USD846793S1 (en) 2017-08-09 2019-04-23 Flex Ltd. Lighting module locking mechanism
USD862777S1 (en) 2017-08-09 2019-10-08 Flex Ltd. Lighting module wide distribution lens
USD832494S1 (en) 2017-08-09 2018-10-30 Flex Ltd. Lighting module heatsink
USD877964S1 (en) 2017-08-09 2020-03-10 Flex Ltd. Lighting module
USD833061S1 (en) 2017-08-09 2018-11-06 Flex Ltd. Lighting module locking endcap
USD832495S1 (en) 2017-08-18 2018-10-30 Flex Ltd. Lighting module locking mechanism
USD862778S1 (en) 2017-08-22 2019-10-08 Flex Ltd Lighting module lens
USD888323S1 (en) 2017-09-07 2020-06-23 Flex Ltd Lighting module wire guard
US11804558B2 (en) 2017-12-29 2023-10-31 Maxeon Solar Pte. Ltd. Conductive contacts for polycrystalline silicon features of solar cells
US20190207040A1 (en) * 2017-12-29 2019-07-04 Sunpower Corporation Chemical polishing of solar cell surfaces and the resulting structures
WO2019163647A1 (ja) * 2018-02-23 2019-08-29 株式会社カネカ 太陽電池の製造方法
CN110634971A (zh) * 2018-05-31 2019-12-31 福建金石能源有限公司 一种背接触异质结太阳能电池及其制造方法
DE112019004905T5 (de) * 2018-09-28 2021-06-02 Sunpower Corporation Solarzellen mit Hybridarchitekturen einschließlich unterscheidbarer p- und n- Regionen
CN110061086A (zh) * 2019-04-04 2019-07-26 国家电投集团西安太阳能电力有限公司 一种hbc太阳能电池
US11824126B2 (en) 2019-12-10 2023-11-21 Maxeon Solar Pte. Ltd. Aligned metallization for solar cells
CN111430508A (zh) * 2020-03-17 2020-07-17 常州捷佳创精密机械有限公司 半导体器件金属化方法和太阳能电池制备方法
EP3982421A1 (en) 2020-10-09 2022-04-13 International Solar Energy Research Center Konstanz E.V. Method for local modification of etching resistance in a silicon layer, use of this method in the production of passivating contact solar cells and thus-created solar cell
EP4068392A1 (en) 2021-03-31 2022-10-05 CSEM Centre Suisse d'Electronique et de Microtechnique SA - Recherche et Développement Photovoltaic device with passivated contact and corresponding method of manufacture
CN120500117A (zh) 2021-06-30 2025-08-15 晶科能源股份有限公司 太阳能电池及光伏组件
CN216488083U (zh) * 2021-09-30 2022-05-10 泰州隆基乐叶光伏科技有限公司 一种背接触电池
EP4195299A1 (en) 2021-12-13 2023-06-14 International Solar Energy Research Center Konstanz E.V. Interdigitated back contact solar cell and method for producing an interdigitated back contact solar cell
CN115566088B (zh) * 2022-08-22 2025-08-12 泰州隆基乐叶光伏科技有限公司 一种背接触电池及其制造方法、光伏组件
CN115621333B (zh) * 2022-11-22 2023-03-10 金阳(泉州)新能源科技有限公司 双面隧穿氧化硅钝化的背接触太阳能电池及其制备方法
CN115985975B (zh) * 2023-02-02 2026-04-28 浙江晶科能源有限公司 太阳能电池和光伏组件
CN116314415B (zh) * 2023-02-10 2024-09-27 天合光能股份有限公司 背接触太阳能电池和制备方法
CN116230783B (zh) * 2023-05-09 2023-10-03 天合光能股份有限公司 太阳能电池、太阳能电池片和光伏组件
CN117423762B (zh) * 2023-12-15 2024-09-03 天合光能股份有限公司 太阳电池及其制备方法、光伏组件、光伏系统
CN117594674B (zh) * 2024-01-19 2024-05-07 金阳(泉州)新能源科技有限公司 一种背接触电池及其制备方法和电池组件
CN118507573A (zh) * 2024-01-29 2024-08-16 天合光能股份有限公司 太阳电池及其制备方法、光伏组件、光伏系统
CN118335845A (zh) * 2024-04-26 2024-07-12 天合光能股份有限公司 全背接触电池制造方法、全背接触电池及光伏组件

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