CN108707866A - 一种多层梯度透光掺杂azo薄膜的制备方法 - Google Patents

一种多层梯度透光掺杂azo薄膜的制备方法 Download PDF

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CN108707866A
CN108707866A CN201810560834.6A CN201810560834A CN108707866A CN 108707866 A CN108707866 A CN 108707866A CN 201810560834 A CN201810560834 A CN 201810560834A CN 108707866 A CN108707866 A CN 108707866A
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target
film layers
azo
azo film
doping
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沈洪雪
姚婷婷
杨勇
李刚
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CNBM Bengbu Design and Research Institute for Glass Industry Co Ltd
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CNBM Bengbu Design and Research Institute for Glass Industry Co Ltd
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C23C14/086—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C23C14/081—Oxides of aluminium, magnesium or beryllium
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
    • C23C14/352—Sputtering by application of a magnetic field, e.g. magnetron sputtering using more than one target
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C23C14/548—Controlling the composition

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

本发明公开一种多层梯度透光掺杂AZO薄膜的制备方法，包括以下步骤：S1、清洗衬底，去除衬底表面的油污和杂质；S2、采用磁控溅射设备，以Al2O3靶与ZnO靶为溅射靶材，使Al2O3靶与ZnO靶的延长线相交于一点，衬底置于Al2O3靶与ZnO靶的相交点上；S3、通入工作气体氩气，在衬底上溅镀第一AZO薄膜层；S4、在第一AZO薄膜层上溅镀第二AZO薄膜层，第二AZO薄膜层的Al掺杂浓度大于第一AZO薄膜层的Al掺杂浓度；S5、在第二AZO薄膜层上溅镀第三AZO薄膜层，第三AZO薄膜层的Al掺杂浓度大于第二AZO薄膜层的Al掺杂浓度；最终得到AZO薄膜；磁控溅射方法简单，可控性强；无需制备各种浓度的掺杂AZO靶，节约成本，提高靶材利用率。

Description

一种多层梯度透光掺杂AZO薄膜的制备方法
技术领域
本发明涉及一种多层梯度透光掺杂AZO薄膜的制备方法。
背景技术
ZnO是一种具有纤锌矿结构的宽禁带隙（3.37eV）半导体化合物，具有优良的压电、器敏性能以及化学稳定性，被作为紫外发光器件以及光电装置中的重要组成部分而得到广泛的应用。
特别是其透明导电性能引起了许多薄膜研究者的关注，Al掺杂ZnO薄膜是一种良好的透明导电薄膜，但许多研究学者也发现，单一掺杂浓度的AZO薄膜，只有在薄膜加热的过程中，才能呈现出良好的光电性能。
发明内容
本发明的目的在于提供一种多层梯度透光掺杂AZO薄膜的制备方法，该方法无需对薄膜加热，具有良好的光电性能，可控性强。
本发明解决其技术问题所采用的技术方案是：
一种多层梯度透光掺杂AZO薄膜的制备方法，包括以下步骤：
S1、清洗衬底，去除衬底表面的油污和杂质；
S2、采用磁控溅射设备，以Al2O3靶与ZnO靶为溅射靶材，Al2O3靶与ZnO靶的靶座均与水平面呈45º夹角，使Al2O3靶与ZnO靶的延长线相交于一点，衬底置于Al2O3靶与ZnO靶的相交点上；
S3、通入工作气体氩气，在衬底上溅镀第一AZO薄膜层；
S4、在第一AZO薄膜层上溅镀第二AZO薄膜层，第二AZO薄膜层的Al掺杂浓度大于第一AZO薄膜层的Al掺杂浓度；
S5、在第二AZO薄膜层上溅镀第三AZO薄膜层，第三AZO薄膜层的Al掺杂浓度大于第二AZO薄膜层的Al掺杂浓度；最终得到AZO薄膜。
进一步的，步骤S3溅镀时，Al2O3靶溅镀功率50W，ZnO靶溅镀功率100W，工作气压1.0Pa，Ar总流量为50sccm，溅镀时间30min。
进一步的，步骤S4溅镀时，Al2O3靶溅镀功率80W，ZnO靶溅镀功率100W，工作气压1.5Pa，Ar总流量为50sccm，溅镀时间30min。
进一步的，步骤S5溅镀时，Al2O3靶溅镀功率100W，ZnO靶溅镀功率100W，工作气压1.5Pa，Ar总流量为50sccm，溅镀时间30min。
本发明的有益效果是，通过共溅射的方式依次制备三层AZO薄膜，三层AZO薄膜的Al掺杂浓度由内至外依次增加，具有良好的光电性能；磁控溅射方法简单，可控性强；无需制备各种浓度的掺杂AZO靶，节约成本，提高靶材利用率。
具体实施方式
本发明提供一种多层梯度透光掺杂AZO薄膜的制备方法，包括以下步骤：
S1、清洗衬底，去除衬底表面的油污和杂质；
S2、采用磁控溅射设备，以Al2O3靶与ZnO靶为溅射靶材，Al2O3靶与ZnO靶的靶座均与水平面呈45º夹角，使Al2O3靶与ZnO靶的延长线相交于一点，衬底置于Al2O3靶与ZnO靶的相交点上；
S3、通入工作气体氩气，在衬底上溅镀第一AZO薄膜层；溅镀时，Al2O3靶溅镀功率50W，ZnO靶溅镀功率100W，工作气压1.0Pa，Ar总流量为50sccm，溅镀时间30min；
S4、在第一AZO薄膜层上溅镀第二AZO薄膜层，第二AZO薄膜层的Al掺杂浓度大于第一AZO薄膜层的Al掺杂浓度；溅镀时，Al2O3靶溅镀功率80W，ZnO靶溅镀功率100W，工作气压1.5Pa，Ar总流量为50sccm，溅镀时间30min；
S5、在第二AZO薄膜层上溅镀第三AZO薄膜层，第三AZO薄膜层的Al掺杂浓度大于第二AZO薄膜层的Al掺杂浓度；溅镀时，Al2O3靶溅镀功率100W，ZnO靶溅镀功率100W，工作气压1.5Pa，Ar总流量为50sccm，溅镀时间30min；最终得到AZO薄膜。
以上所述，仅是本发明的较佳实施例而已，并非对本发明作任何形式上的限制；任何熟悉本领域的技术人员，在不脱离本发明技术方案范围情况下，都可利用上述揭示的方法和技术内容对本发明技术方案做出许多可能的变动和修饰，或修改为等同变化的等效实施例。因此，凡是未脱离本发明技术方案的内容，依据本发明的技术实质对以上实施例所做的任何简单修改、等同替换、等效变化及修饰，均仍属于本发明技术方案保护的范围内。

Claims (4)

1.一种多层梯度透光掺杂AZO薄膜的制备方法，其特征在于，包括以下步骤：
S1、清洗衬底，去除衬底表面的油污和杂质；
S2、采用磁控溅射设备，以Al2O3靶与ZnO靶为溅射靶材，Al2O3靶与ZnO靶的靶座均与水平面呈45º夹角，使Al2O3靶与ZnO靶的延长线相交于一点，衬底置于Al2O3靶与ZnO靶的相交点上；
S3、通入工作气体氩气，在衬底上溅镀第一AZO薄膜层；
S4、在第一AZO薄膜层上溅镀第二AZO薄膜层，第二AZO薄膜层的Al掺杂浓度大于第一AZO薄膜层的Al掺杂浓度；
S5、在第二AZO薄膜层上溅镀第三AZO薄膜层，第三AZO薄膜层的Al掺杂浓度大于第二AZO薄膜层的Al掺杂浓度；最终得到AZO薄膜。
2.根据权利要求1所述的一种多层梯度透光掺杂AZO薄膜的制备方法，其特征在于，步骤S3溅镀时，Al2O3靶溅镀功率50W，ZnO靶溅镀功率100W，工作气压1.0Pa，Ar总流量为50sccm，溅镀时间30min。
3.根据权利要求1所述的一种多层梯度透光掺杂AZO薄膜的制备方法，其特征在于，步骤S4溅镀时，Al2O3靶溅镀功率80W，ZnO靶溅镀功率100W，工作气压1.5Pa，Ar总流量为50sccm，溅镀时间30min。
4.根据权利要求1所述的一种多层梯度透光掺杂AZO薄膜的制备方法，其特征在于，步骤S5溅镀时，Al2O3靶溅镀功率100W，ZnO靶溅镀功率100W，工作气压1.5Pa，Ar总流量为50sccm，溅镀时间30min。
CN201810560834.6A 2018-06-04 2018-06-04 一种多层梯度透光掺杂azo薄膜的制备方法 Withdrawn CN108707866A (zh)

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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102199758A (zh) * 2011-05-13 2011-09-28 南开大学 一种生长绒面结构ZnO-TCO薄膜的方法及应用
CN103508406A (zh) * 2012-06-29 2014-01-15 无锡华润上华半导体有限公司 Azo薄膜、制备方法以及包括其的mems器件
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CN107326326A (zh) * 2017-06-15 2017-11-07 郑州科技学院 一种电学器件用Al掺杂的氧化锌薄膜制备方法

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Publication number Priority date Publication date Assignee Title
CN102199758A (zh) * 2011-05-13 2011-09-28 南开大学 一种生长绒面结构ZnO-TCO薄膜的方法及应用
CN103508406A (zh) * 2012-06-29 2014-01-15 无锡华润上华半导体有限公司 Azo薄膜、制备方法以及包括其的mems器件
CN105132874A (zh) * 2015-08-31 2015-12-09 辽宁工业大学 一种直流/射频共溅射法制备高浓度梯度azo单晶导电薄膜的方法
CN107326326A (zh) * 2017-06-15 2017-11-07 郑州科技学院 一种电学器件用Al掺杂的氧化锌薄膜制备方法

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Application publication date: 20181026