CN108696270A - A kind of analog switching circuit - Google Patents
A kind of analog switching circuit Download PDFInfo
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- CN108696270A CN108696270A CN201810509928.0A CN201810509928A CN108696270A CN 108696270 A CN108696270 A CN 108696270A CN 201810509928 A CN201810509928 A CN 201810509928A CN 108696270 A CN108696270 A CN 108696270A
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/14—Modifications for compensating variations of physical values, e.g. of temperature
- H03K17/145—Modifications for compensating variations of physical values, e.g. of temperature in field-effect transistor switches
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Abstract
The invention discloses a kind of analog switching circuit, the analog switching circuit includes:Voltage generation circuit and the first field-effect tube;Wherein, the first end of the voltage generation circuit is connect with voltage input end, the second end of the voltage generation circuit is connect with the grid of first field-effect tube, the third end of the voltage generation circuit is connect with the source electrode of first field-effect tube, the source electrode of first field-effect tube is also connect with signal input part, and the drain electrode of first field-effect tube is connect with signal output end;The voltage generation circuit is used to generate the voltage for making first field-effect tube have constant conduction resistance.The analog switching circuit thoroughly eliminates influence of the temperature to analog switch conducting resistance, and the conducting resistance of analog switch can be made constant, the performance for improving analog switching circuit of high degree.
Description
Technical field
The present invention relates to semiconductor integrated circuit technology fields, more specifically more particularly to a kind of analog switching circuit.
Background technology
With the continuous development of science and technology, various electronic equipments be widely used to daily life,
In work and industry, bring great convenience for people's lives.
In the electronic device usually because the limitation of device external interface resource, leads to the data sharing one of different purposes
USB interface in interface, such as mobile phone is usually used in as Audio audios, USB and UART (Universal
Asynchronous Receiver/Transmitter, universal asynchronous receiving-transmitting transmitter) etc. signal transmissions multiplex interface, and
The variation of the conducting resistance of analog switch influences whether the transmission quality of the signal such as data transmission or audio even video, into
And bring unnecessary mistake.
Currently, usually using metal-oxide-semiconductor as analog switch in integrated circuit, metal-oxide-semiconductor is operated in linearly when as switch
Area, the conducting resistance and Vgs (difference in voltage at grid (Gate) end and source electrode (Source) end of metal-oxide-semiconductor) of metal-oxide-semiconductor, substrate
The factors such as effect and temperature are related.
In order to reduce analog switch conducting resistance variation, traditional technological means is by using constant Vgs or substrate
Effect removing method etc. reduces the variation of the conducting resistance of analog switch.
But although existing technological means can eliminate analog switch conducting resistance caused by transmission signal level at present
Variation, or the influence of some temperature can be weakened, but can not thoroughly eliminate temperature always to analog switch conducting resistance
Influence.
Invention content
To solve the above problems, the present invention provides a kind of analog switching circuit, which thoroughly eliminates temperature
The influence to analog switch conducting resistance is spent, the conducting resistance of analog switch can be made constant, high degree improves simulation
The performance of switching circuit.
To achieve the above object, the present invention provides the following technical solutions:
A kind of analog switching circuit, the analog switching circuit include:Voltage generation circuit and the first field-effect tube;
Wherein, the first end of the voltage generation circuit is connect with voltage input end, and the second of the voltage generation circuit
End is connect with the grid of first field-effect tube, the source at the third end of the voltage generation circuit and first field-effect tube
Pole connects, and the source electrode of first field-effect tube is also connect with signal input part, the drain electrode of first field-effect tube and signal
Output end connects;
The voltage generation circuit is used to generate the voltage for making first field-effect tube have constant conduction resistance.
Preferably, in above-mentioned analog switching circuit, first field-effect tube is N-type field-effect tube.
Preferably, in above-mentioned analog switching circuit, the voltage generation circuit includes:Second field-effect tube, third field
Effect pipe, the 4th field-effect tube, the 5th field-effect tube, the 6th field-effect tube, the 7th field-effect tube and resistance;
Wherein, the source electrode grounding connection of second field-effect tube, grid and the third of second field-effect tube
The grid of field-effect tube connects, and the grid of second field-effect tube is connect with the drain electrode of second field-effect tube, and described the
The source electrode of three field-effect tube is connect with one end of the resistance, the other end grounding connection of the resistance, the third field-effect
The drain electrode of pipe is connect with the drain electrode of the 4th field-effect tube, grid and the 5th field-effect tube of the 4th field-effect tube
Grid connection, the drain electrode of the grid of the 4th field-effect tube and the third field-effect tube and the 4th field-effect tube
The connecting node of drain electrode connects, and the source electrode of the 4th field-effect tube is connect with the voltage input end, the 5th field-effect
The drain electrode of pipe is connect with the drain electrode of second field-effect tube, and source electrode and the voltage input end of the 5th field-effect tube connect
It connects;
The source electrode of 6th field-effect tube is connect with the voltage input end, the grid of the 6th field-effect tube and institute
The drain electrode for stating third field-effect tube is connected with the connecting node of the drain electrode of the 4th field-effect tube, the 6th field-effect tube
Drain electrode is connect with the grid of the 7th field-effect tube, the grid of the grid and first field-effect tube of the 7th field-effect tube
Pole connects, and the source electrode of the 7th field-effect tube is connect with the source electrode of first field-effect tube, the 7th field-effect tube
Drain electrode is connect with the grid of the 7th field-effect tube.
Preferably, in above-mentioned analog switching circuit, second field-effect tube, the third field-effect tube and described
Seven field-effect tube are N-type field-effect tube.
Preferably, in above-mentioned analog switching circuit, the 4th field-effect tube, the 5th field-effect tube and described
Six field-effect tube are p-type field-effect tube.
Preferably, in above-mentioned analog switching circuit, the resistance is adjustable resistance.
By foregoing description it is found that a kind of analog switching circuit provided by the invention, the analog switching circuit include:Electricity
Press generation circuit and the first field-effect tube;Wherein, the first end of the voltage generation circuit is connect with voltage input end, the electricity
Pressure generation circuit second end connect with the grid of first field-effect tube, the third end of the voltage generation circuit with it is described
The source electrode of first field-effect tube connects, and the source electrode of first field-effect tube is also connect with signal input part, first effect
Should the drain electrode of pipe connect with signal output end;The voltage generation circuit makes first field-effect tube with constant for generating
The voltage of conducting resistance.
By being arranged for generating the electricity for making first field-effect tube that there is the required Vgs voltages of constant conduction resistance
Generation circuit is pressed, so that analog switching circuit is thoroughly eliminated influence of the temperature to analog switch conducting resistance, analog switch can be made
Conducting resistance it is constant, the performance for improving analog switching circuit of high degree.
Description of the drawings
In order to more clearly explain the embodiment of the invention or the technical proposal in the existing technology, to embodiment or will show below
There is attached drawing needed in technology description to be briefly described, it should be apparent that, the accompanying drawings in the following description is only this
The embodiment of invention for those of ordinary skill in the art without creative efforts, can also basis
The attached drawing of offer obtains other attached drawings.
Fig. 1 is a kind of structural schematic diagram of analog switching circuit provided in an embodiment of the present invention;
Fig. 2 is the structural schematic diagram of another analog switching circuit provided in an embodiment of the present invention.
Specific implementation mode
Following will be combined with the drawings in the embodiments of the present invention, and technical solution in the embodiment of the present invention carries out clear, complete
Site preparation describes, it is clear that described embodiments are only a part of the embodiments of the present invention, instead of all the embodiments.It is based on
Embodiment in the present invention, it is obtained by those of ordinary skill in the art without making creative efforts every other
Embodiment shall fall within the protection scope of the present invention.
In order to make the foregoing objectives, features and advantages of the present invention clearer and more comprehensible, below in conjunction with the accompanying drawings and specific real
Applying mode, the present invention is described in further detail.
With reference to figure 1, Fig. 1 is a kind of structural schematic diagram of analog switching circuit provided in an embodiment of the present invention, the simulation
Switching circuit includes:Voltage generation circuit 11 and the first field-effect tube M0.
Wherein, the first end of the voltage generation circuit 11 is connect with voltage input end Vcc, the voltage generation circuit 11
Second end connect with the grid of the first field-effect tube M0, the third end of the voltage generation circuit 11 with described first
The source electrode of effect pipe M0 connects, and the source electrode of the first field-effect tube M0 is also connect with signal input part, first field-effect
The drain electrode of pipe M0 is connect with signal output end.
The voltage generation circuit 11 is used to generate the voltage for making the first field-effect tube M0 have constant conduction resistance.
Specifically, the voltage generation circuit 11 makes the first field-effect tube M0 have constant conduction resistance for generating
Required Vgs voltages, wherein Vgs voltages are grid (Gate) end and source electrode (Source) ends of the first field-effect tube pipe M0
Difference in voltage.The Vgs voltages can make the conducting resistance of the first field-effect tube M0 invariable, completely eliminate temperature
Caused by variation the problem of conducting resistance variation, and then realize conducting resistance that is constant and stablizing.
Further, the first field-effect tube M0 is N-type field-effect tube.
Further, as shown in Fig. 2, the voltage generation circuit 11 includes:Second field-effect tube M1, third field-effect tube
M2, the 4th field-effect tube M3, the 5th field-effect tube M4, the 6th field-effect tube M5, the 7th field-effect tube M6 and resistance RS.
Wherein, the source electrode grounding connection of the second field-effect tube M1, the grid of the second field-effect tube M1 with it is described
The grid of third field-effect tube M2 connects, and the grid of the second field-effect tube M1 and the drain electrode of the second field-effect tube M1 connect
It connecing, the source electrode of the third field-effect tube M2 is connect with one end of the resistance RS, the other end grounding connection of the resistance RS,
The drain electrode of the third field-effect tube M2 is connect with the drain electrode of the 4th field-effect tube M3, the grid of the 4th field-effect tube M3
Pole is connect with the grid of the 5th field-effect tube M4, the grid of the 4th field-effect tube M3 and the third field-effect tube M2
Drain electrode connected with the connecting node of the drain electrode of the 4th field-effect tube M3, the source electrode of the 4th field-effect tube M3 with it is described
The drain electrode of voltage input end Vcc connections, the 5th field-effect tube M4 is connect with the drain electrode of the second field-effect tube M1, described
The source electrode of 5th field-effect tube M4 is connect with the voltage input end Vcc.
The source electrode of the 6th field-effect tube M6 is connect with the voltage input end Vcc, the 6th field-effect tube M5's
The connecting node of the drain electrode of grid and the third field-effect tube M2 and the drain electrode of the 4th field-effect tube M3 is connect, and described the
The drain electrode of six field-effect tube M5 is connect with the grid of the 7th field-effect tube M6, the grid of the 7th field-effect tube M6 and institute
State the grid connection of the first field-effect tube M0, the source electrode of the source electrode of the 7th field-effect tube M6 and the first field-effect tube M0
Connection, the drain electrode of the 7th field-effect tube M6 are connect with the grid of the 7th field-effect tube M6.
Further, the second field-effect tube M1, the third field-effect tube M2 and the 7th field-effect tube M6 are equal
For N-type field-effect tube.
Further, the 4th field-effect tube M3, the 5th field-effect tube M4 and the 6th field-effect tube M5 are equal
For p-type field-effect tube.
Further, the resistance RS is adjustable resistance.
For concrete structure based on the voltage generation circuit 11, for the first field-effect tube M0, used as switch
When be operated in linear region, the conducting resistance Ron of the first field-effect tube M0 is as follows:
Wherein, unTo link up electron mobility, Cox is the gate oxide capacitance of unit area, and W is the first field-effect tube M0
Grid width, L is the grid length of the first field-effect tube M0, (W/L)0It is the breadth length ratio of the first field-effect tube M0, Vt is the first field-effect
The on state threshold voltage of pipe M0.
Based on formula (1) and corresponding semiconductor intellectual it is found that with temperature variation, unIt can change with Vt,
The u especially under deep submicron processnIt can be reduced with the rising of temperature, although Vt can also be reduced, in general technology scheme
What Vgs can be set is far longer than Vt, therefore the principal element for influencing Ron is exactly un, so need to produce it is a kind of not with
The Ron of flow-route and temperature variation, that is, preferably realizing can be with Vt and unPass between relevant Vgs or Vgs and Vt
System, and then compensate unVariation etc..
As shown in Figure 2, wherein the first field-effect tube M0 is as main switch, the second field-effect tube M1, third field-effect tube
M2, the 4th field-effect tube M3, the 5th field-effect tube M4, the 6th field-effect tube M5, the 7th field-effect tube M6 and resistance RS constitute electricity
Press generation circuit.
Assuming that the electric current for passing through the 7th field-effect tube M6 is I6, then according to its connection, the Vgs of generation is as follows:
Wherein, (W/L)6It is the breadth length ratio of the 7th field-effect tube M6, it is assumed that (W/L)0=(W/L)6, then formula (2) is brought into
Formula has in (1):
Calculate again by the second field-effect tube M1, third field-effect tube M2, the 4th field-effect tube M3, the 5th field-effect tube M4 and
The electric current by the 4th field-effect tube M3 that resistance RS is generated is set as I3, wherein the breadth length ratio of third field-effect tube M2 is
The breadth length ratio of K times of the breadth length ratio of two field-effect tube M1, the 4th field-effect tube M3 is identical with the breadth length ratio of the 5th field-effect tube M4,
Since the 4th field-effect tube M3 and the 6th field-effect tube M5 is current mirror, I3=I6, it is assumed that the width of the 4th field-effect tube M3 is long
It is more identical than with the breadth length ratio of the 7th field-effect tube M6, then, (W/L)3=(W/L)6=W/L, then,
Formula (4) is brought into formula (3) can obtain Ron expression formula it is as follows:
Abbreviation obtains:
By formula (6) it is found that Ron is only related with the value of Proportional coefficient K and RS, and it is 0 that temperature coefficient, which may be used, in RS
Method realize, such as Positive and Negative Coefficient Temperature offset or directly external mode.
It should be noted that above derive is to be based on the first field-effect tube M0, the second field-effect tube M1 and the 7th field-effect
The grid width of pipe M6 is equal and grid length is equal is derived, and the width that the first field-effect tube M0 can be adjusted according to actual demand is long
Than, so that it may to realize the purpose for adjusting the first field-effect tube M0 conducting resistance actual values.
By foregoing description it is found that a kind of analog switching circuit provided by the invention, by setting for generate make it is described
First field-effect tube has the voltage generation circuit of the required Vgs voltages of constant conduction resistance, keeps analog switching circuit thorough
Influence of the temperature to analog switch conducting resistance is eliminated, the conducting resistance of analog switch can be made constant, the raising of high degree
The performance of analog switching circuit.
The foregoing description of the disclosed embodiments enables those skilled in the art to implement or use the present invention.
Various modifications to these embodiments will be apparent to those skilled in the art, as defined herein
General Principle can be realized in other embodiments without departing from the spirit or scope of the present invention.Therefore, of the invention
It is not intended to be limited to the embodiments shown herein, and is to fit to and the principles and novel features disclosed herein phase one
The widest range caused.
Claims (6)
1. a kind of analog switching circuit, which is characterized in that the analog switching circuit includes:Voltage generation circuit and first effect
Ying Guan;
Wherein, the first end of the voltage generation circuit is connect with voltage input end, the second end of the voltage generation circuit with
The grid of first field-effect tube connects, and the third end of the voltage generation circuit and the source electrode of first field-effect tube connect
It connects, the source electrode of first field-effect tube is also connect with signal input part, and drain electrode and the signal of first field-effect tube export
End connection;
The voltage generation circuit is used to generate the voltage for making first field-effect tube have constant conduction resistance.
2. analog switching circuit according to claim 1, which is characterized in that first field-effect tube is N-type field-effect
Pipe.
3. analog switching circuit according to claim 1, which is characterized in that the voltage generation circuit includes:Second
Effect pipe, third field-effect tube, the 4th field-effect tube, the 5th field-effect tube, the 6th field-effect tube, the 7th field-effect tube and electricity
Resistance;
Wherein, the source electrode grounding connection of second field-effect tube, the grid of second field-effect tube are imitated with the third field
Should pipe grid connection, the grid of second field-effect tube connect with the drain electrode of second field-effect tube, the third field
The source electrode of effect pipe is connect with one end of the resistance, the other end grounding connection of the resistance, the third field-effect tube
Drain electrode is connect with the drain electrode of the 4th field-effect tube, the grid of the grid and the 5th field-effect tube of the 4th field-effect tube
Pole connects, grid and the drain electrode of the third field-effect tube and the drain electrode of the 4th field-effect tube of the 4th field-effect tube
Connecting node connection, the source electrode of the 4th field-effect tube connect with the voltage input end, the 5th field-effect tube
Drain electrode is connect with the drain electrode of second field-effect tube, and the source electrode of the 5th field-effect tube is connect with the voltage input end;
The source electrode of 6th field-effect tube is connect with the voltage input end, the grid of the 6th field-effect tube and described the
The drain electrode of three field-effect tube is connected with the connecting node of the drain electrode of the 4th field-effect tube, the drain electrode of the 6th field-effect tube
It is connect with the grid of the 7th field-effect tube, the grid of the 7th field-effect tube connects with the grid of first field-effect tube
It connects, the source electrode of the 7th field-effect tube is connect with the source electrode of first field-effect tube, the drain electrode of the 7th field-effect tube
It is connect with the grid of the 7th field-effect tube.
4. analog switching circuit according to claim 3, which is characterized in that second field-effect tube, the third field
Effect pipe and the 7th field-effect tube are N-type field-effect tube.
5. analog switching circuit according to claim 3, which is characterized in that the 4th field-effect tube, 5th described
Effect pipe and the 6th field-effect tube are p-type field-effect tube.
6. analog switching circuit according to claim 3, which is characterized in that the resistance is adjustable resistance.
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| CN201810509928.0A CN108696270B (en) | 2018-05-24 | 2018-05-24 | Analog switch circuit |
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| CN201810509928.0A CN108696270B (en) | 2018-05-24 | 2018-05-24 | Analog switch circuit |
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| CN108696270B CN108696270B (en) | 2022-02-01 |
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Address after: Room 1201, No.2, Lane 908, Xiuwen Road, Minhang District, Shanghai, 201199 Patentee after: SHANGHAI AWINIC TECHNOLOGY Co.,Ltd. Address before: Room 303-39, building 33, 680 Guiping Road, Xuhui District, Shanghai 200233 Patentee before: SHANGHAI AWINIC TECHNOLOGY Co.,Ltd. |