CN108655086A - The regeneration method of 8 cun of crystal round etching processing procedure TD/DRM art quartz dead rings of semiconductor - Google Patents
The regeneration method of 8 cun of crystal round etching processing procedure TD/DRM art quartz dead rings of semiconductor Download PDFInfo
- Publication number
- CN108655086A CN108655086A CN201810306112.8A CN201810306112A CN108655086A CN 108655086 A CN108655086 A CN 108655086A CN 201810306112 A CN201810306112 A CN 201810306112A CN 108655086 A CN108655086 A CN 108655086A
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- Prior art keywords
- quartz
- insulator ring
- cleaning
- quartz insulator
- drm
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/10—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/10—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration
- B08B3/12—Cleaning involving contact with liquid with additional treatment of the liquid or of the object being cleaned, e.g. by heat, by electricity or by vibration by sonic or ultrasonic vibrations
Abstract
The invention discloses a kind of regeneration methods of 8 cun of crystal round etching processing procedure TD/DRM art quartz dead rings of semiconductor, include the following steps：1) quartz insulator ring is taken, is soaked in water for cleaning 20 ~ 30 minutes；2) quartz insulator ring is taken out, first round ultrasonic cleaning is carried out；3) the second wheel ultrasonic cleaning is carried out；4) third round ultrasonic cleaning is carried out；5) high pressure cleaning showers are carried out to quartz insulator ring；6) it is sent into baking oven, quartz insulator ring is toasted 5 ~ 10 minutes；7) by being sent directly into cryogenic freezing room after being taken out in baking oven, rapid freezing, freezing duration 30 ~ 60 minutes are carried out to quartz insulator ring；8) quartz insulator ring is taken out, quartz insulator ring surface is beaten, warms naturally to room temperature, completes the regeneration to the quartz insulator ring.The regeneration method does not use any chemical reagents, passes through the physics principle to expand with heat and contract with cold, you can realizes to the cleaning of quartz insulator ring, regeneration, regeneration cost is low, energy conservation and environmental protection, environmentally friendly, pollution-free.
Description
Technical field
The invention belongs to quartz insulator ring technical field of regeneration, specifically, being related to a kind of 8 cun of crystal round etching processing procedures of semiconductor
The regeneration method of TD/DRM art quartz dead rings.
Background technology
Wafer（Wafer）, it is the carrier for producing used in integrated circuits, refers to monocrystalline silicon wafer more.Monocrystalline silicon wafer is by common
Silica sand refines, and polysilicon is made by dissolving, purification, distillation a series of measures, polysilicon is again through melting, monocrystalline nucleus lifting system
At the silicon single crystal rod with certain crystalline orientation, silicon single crystal rod just becomes wafer after polishing, slice.Wafer is
Most common semi-conducting material, by its diameter be divided into 4 inches, 5 inches, 6 inches, 8 inches, 12 inches 14 inches, 15 inches, 16
Inch ... 20 inches with first-class.Wafer is bigger, and producible IC is more on same disk, can reduce cost, but to material
The requirement higher of technology and production technology.
For computer product, where chip can be described as its marrow, the grade of chip also just determines production after all
The extra factors such as the performance and power consumption of product, calorific value, as the predecessor of chip, the quality and processing procedure of wafer, which just become, to disappear
The person of expense and institute of manufacturer common concern.
During silicon wafer process, including etch process, that is, utilize photoetching technique and ion etching technology, retain barrier from
Silicon nitride layer above layer.
It is wherein to have a weight based on the quartz insulator ring of 8 cun of crystal round etching processing procedure TD/DRM technique productions of semiconductor
Product is wanted, in recent years, since production capacity does not catch up with the growth rate of demand so that the regeneration and recycling of quartz insulator ring,
Gradually cause the concern of people.
The material of quartz insulator ring is based on quartz, and cleaning, regeneration for quartz, the current country is primarily present following special
Sharp document：
China Patent Publication No.：102249522A discloses a kind of cleaning method of the quartz piece for photovoltaic production comprising
Following steps：A）The temperature in stove is adjusted to 1150 DEG C~1200 DEG C first；B）It is inputted simultaneously into the furnace chamber of diffusion furnace
The phosphorus oxychloride and flow that nitrogen that flow is 25-50L/min, flow are 0.5~2.5L/min are 0.8~3.4
The oxygen of L/min, input time are 120~300 minutes, and above-mentioned nitrogen, phosphorus oxychloride, the import of oxygen from diffusion furnace are defeated
Enter, is exported again from the outlet of diffusion furnace by way of quartz piece, this kind of cleaning method is not only advantageous to keep the safety in production, but also can reduce
Production cost.However, the cleaning method that the patent is provided, can clean quartz piece, be regenerated using various chemical reagent,
The use of excessive chemical reagent, can cause environment the pollution for being difficult to reverse.
Invention content
Above-mentioned to solve the problems, such as, the purpose of the present invention is to provide a kind of 8 cun of crystal round etching processing procedure TD/ of semiconductor
The regeneration method of DRM art quartz dead rings, the regeneration method do not use any chemical reagents, pass through the physics to expand with heat and contract with cold
Learn principle, you can realize to the cleaning of quartz insulator ring, regeneration, regeneration cost is low, energy conservation and environmental protection, environmentally friendly, pollution-free.
In order to achieve the above objectives, the technical scheme is that：
A kind of regeneration method of 8 cun of crystal round etching processing procedure TD/DRM art quartz dead rings of semiconductor, the method includes as follows
Step：
1) quartz insulator ring is taken, is positioned in rinse bath, is soaked in water for cleaning 20 ~ 30 minutes；
2) quartz insulator ring is taken out, the first supersonic wave cleaning machine is sent into, carries out first round ultrasonic cleaning, ultrasonic power 80
~100KHz；
3) quartz insulator ring is taken out, the second supersonic wave cleaning machine is sent into, carries out the second wheel ultrasonic cleaning, ultrasonic power is
150~200KHz；
4) quartz insulator ring is taken out, third supersonic wave cleaning machine is sent into, carries out third round ultrasonic cleaning, ultrasonic power is
300~400KHz；
5) quartz insulator ring is taken out, high-pressure spraying machine is sent into, high pressure cleaning showers are carried out to quartz insulator ring；
6) the quartz insulator ring after high pressure cleaning showers is sent into baking oven, 700 ~ 800 DEG C of oven temperature is set, by quartz insulator ring
Baking 5 ~ 10 minutes so that the fusing of quartz insulator ring surface attachment, liquefaction；
7) by the quartz insulator ring after high-temperature baking by being sent directly into cryogenic freezing room after being taken out in baking oven, with 40 ~ 50 DEG C/min
Cooling rate be cooled to -30 ~ -20 DEG C, rapid freezing, freezing duration 30 ~ 60 minutes so that quartz are carried out to quartz insulator ring
Insulating ring surface attachment lumps；
8) quartz insulator ring is taken out, beats quartz insulator ring surface so that surface attachments are crushed, fall off, and warm naturally to room
Temperature completes the regeneration to the quartz insulator ring.
Further, the step 1) water for cleaning is deionized water.
Further, ultrasonic cleaning with water is ultra-pure water in step 2), 60 ~ 70 DEG C of water temperature, cleaning duration 4 ~ 6 minutes.
Further, ultrasonic cleaning with water is deionized water in step 3), and water temperature is 60 ~ 80 DEG C, when cleaning a length of 5 ~
10 minutes.
Further, ultrasonic cleaning with water is ultra-pure water in step 4), 70 ~ 80 DEG C of water temperature, and when cleaning is 8 ~ 12 points a length of
Clock.
Further, step 5) carries out high pressure cleaning showers, high-pressure nozzle injection using high-pressure nozzle to quartz insulator ring
Pressure is 0.5 ~ 2MPa.
Further, quartz insulator ring is cooled to -30 ~ -20 DEG C by step 7) using dry ice or liquid nitrogen.
Further, quartz insulator ring set is set on a shaft, shaft table by step 5) during high pressure cleaning showers
Face is provided with the supporting rod for being used to support quartz insulator ring, shaft average rate rotation so that fully sprayed quartz insulator ring periphery
Leaching cleaning.
The invention has the advantages that：
The regeneration method carries out ultrasonication first by three-wheel ultrasonic cleaning to quartz insulator ring surface attachment,
Then it is toasted at a high temperature of 700 ~ 800 DEG C, then uses dry ice or liquid nitrogen by quartz insulator ring rapid cooling to -30 ~ -20 DEG C,
It can be effectively peeled off the attachment for being attached to quartz insulator ring surface, whole process does not use any chemical reagents, passes through heat expansion
The physics principle of shrinkage, you can realize to the cleaning of quartz insulator ring, regeneration, regeneration cost is low, energy conservation and environmental protection, to environment friend
It is good, pollution-free.
Specific implementation mode
With reference to specific embodiment, the present invention is described in detail.Following embodiment will be helpful to the technology of this field
Personnel further understand the present invention, but the invention is not limited in any way.It should be pointed out that the ordinary skill of this field
For personnel, without departing from the inventive concept of the premise, various modifications and improvements can be made.These belong to the present invention
Protection domain.
A kind of regeneration side of 8 cun of crystal round etching processing procedure TD/DRM art quartz dead rings of semiconductor provided by the present invention
Method, described method includes following steps：
1) quartz insulator ring is taken, is positioned in rinse bath, is soaked in water for cleaning 20 ~ 30 minutes；
2) quartz insulator ring is taken out, the first supersonic wave cleaning machine is sent into, carries out first round ultrasonic cleaning, ultrasonic power 80
~100KHz；
3) quartz insulator ring is taken out, the second supersonic wave cleaning machine is sent into, carries out the second wheel ultrasonic cleaning, ultrasonic power is
150~200KHz；
4) quartz insulator ring is taken out, third supersonic wave cleaning machine is sent into, carries out third round ultrasonic cleaning, ultrasonic power is
300~400KHz；
5) quartz insulator ring is taken out, high-pressure spraying machine is sent into, high pressure cleaning showers are carried out to quartz insulator ring；
6) the quartz insulator ring after high pressure cleaning showers is sent into baking oven, 700 ~ 800 DEG C of oven temperature is set, by quartz insulator ring
Baking 5 ~ 10 minutes so that the fusing of quartz insulator ring surface attachment, liquefaction；
7) by the quartz insulator ring after high-temperature baking by being sent directly into cryogenic freezing room after being taken out in baking oven, with 40 ~ 50 DEG C/minute
The cooling rate of clock is cooled to -30 ~ -20 DEG C, and rapid freezing, freezing duration 30 ~ 60 minutes so that stone are carried out to quartz insulator ring
English insulating ring surface attachment lumps；
8) quartz insulator ring is taken out, beats quartz insulator ring surface so that surface attachments are crushed, fall off, and warm naturally to room
Temperature completes the regeneration to the quartz insulator ring.
Further, the step 1) water for cleaning is deionized water.
Further, ultrasonic cleaning with water is ultra-pure water in step 2), 60 ~ 70 DEG C of water temperature, cleaning duration 4 ~ 6 minutes.
Further, ultrasonic cleaning with water is deionized water in step 3), and water temperature is 60 ~ 80 DEG C, when cleaning a length of 5 ~
10 minutes.
Further, ultrasonic cleaning with water is ultra-pure water in step 4), 70 ~ 80 DEG C of water temperature, and when cleaning is 8 ~ 12 points a length of
Clock.
Further, step 5) carries out high pressure cleaning showers, high-pressure nozzle injection using high-pressure nozzle to quartz insulator ring
Pressure is 0.5 ~ 2MPa.
Further, quartz insulator ring is cooled to -30 ~ -20 DEG C by step 7) using dry ice or liquid nitrogen.
Further, quartz insulator ring set is set on a shaft, shaft table by step 5) during high pressure cleaning showers
Face is provided with the supporting rod for being used to support quartz insulator ring, shaft average rate rotation so that fully sprayed quartz insulator ring periphery
Leaching cleaning.
It should be noted that the above examples are only used to illustrate the technical scheme of the present invention and are not limiting.Although with reference to compared with
Good embodiment describes the invention in detail, it will be understood by those of ordinary skill in the art that, it can be to the technology of invention
Scheme is modified or replaced equivalently, and without departing from the range of technical solution of the present invention, should all cover the power in the present invention
In sharp claimed range.
Claims (8)
1. a kind of regeneration method of 8 cun of crystal round etching processing procedure TD/DRM art quartz dead rings of semiconductor, which is characterized in that described
Method includes the following steps：
1) quartz insulator ring is taken, is positioned in rinse bath, is soaked in water for cleaning 20 ~ 30 minutes；
2) quartz insulator ring is taken out, the first supersonic wave cleaning machine is sent into, carries out first round ultrasonic cleaning, ultrasonic power 80
~100KHz；
3) quartz insulator ring is taken out, the second supersonic wave cleaning machine is sent into, carries out the second wheel ultrasonic cleaning, ultrasonic power is
150~200KHz；
4) quartz insulator ring is taken out, third supersonic wave cleaning machine is sent into, carries out third round ultrasonic cleaning, ultrasonic power is
300~400KHz；
5) quartz insulator ring is taken out, high-pressure spraying machine is sent into, high pressure cleaning showers are carried out to quartz insulator ring；
6) the quartz insulator ring after high pressure cleaning showers is sent into baking oven, 700 ~ 800 DEG C of oven temperature is set, by quartz insulator ring
Baking 5 ~ 10 minutes so that the fusing of quartz insulator ring surface attachment, liquefaction；
7) by the quartz insulator ring after high-temperature baking by being sent directly into cryogenic freezing room after being taken out in baking oven, with 40 ~ 50 DEG C/min
Cooling rate be cooled to -30 ~ -20 DEG C, rapid freezing, freezing duration 30 ~ 60 minutes so that quartz are carried out to quartz insulator ring
Insulating ring surface attachment lumps；
8) quartz insulator ring is taken out, beats quartz insulator ring surface so that surface attachments are crushed, fall off, and warm naturally to room
Temperature completes the regeneration to the quartz insulator ring.
2. the regeneration method of 8 cun of crystal round etching processing procedure TD/DRM art quartz dead rings of semiconductor according to claim 1,
It is characterized in that, the step 1) water for cleaning is deionized water.
3. the regeneration method of 8 cun of crystal round etching processing procedure TD/DRM art quartz dead rings of semiconductor according to claim 1,
It is characterized in that, ultrasonic cleaning with water is ultra-pure water in step 2), and 60 ~ 70 DEG C of water temperature, cleaning duration 4 ~ 6 minutes.
4. the regeneration method of 8 cun of crystal round etching processing procedure TD/DRM art quartz dead rings of semiconductor according to claim 1,
It is characterized in that, ultrasonic cleaning with water is deionized water in step 3), water temperature is 60 ~ 80 DEG C, and when cleaning is 5 ~ 10 minutes a length of.
5. the regeneration method of 8 cun of crystal round etching processing procedure TD/DRM art quartz dead rings of semiconductor according to claim 1,
It is characterized in that, ultrasonic cleaning with water is ultra-pure water in step 4), 70 ~ 80 DEG C of water temperature, when cleaning is 8 ~ 12 minutes a length of.
6. the regeneration method of 8 cun of crystal round etching processing procedure TD/DRM art quartz dead rings of semiconductor according to claim 1,
It is characterized in that, step 5) carries out high pressure cleaning showers using high-pressure nozzle to quartz insulator ring, high-pressure nozzle injection pressure is
0.5~2MPa。
7. the regeneration method of 8 cun of crystal round etching processing procedure TD/DRM art quartz dead rings of semiconductor according to claim 1,
It is characterized in that, quartz insulator ring is cooled to -30 ~ -20 DEG C by step 7) using dry ice or liquid nitrogen.
8. the regeneration method of 8 cun of crystal round etching processing procedure TD/DRM art quartz dead rings of semiconductor according to claim 1,
It is characterized in that, during high pressure cleaning showers, quartz insulator ring set is set on a shaft for step 5), axle surface setting
It is useful for the supporting rod of support quartz insulator ring, shaft average rate rotation so that quartz insulator ring periphery obtains abundant cleaning showers.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810306112.8A CN108655086A (en) | 2018-04-08 | 2018-04-08 | The regeneration method of 8 cun of crystal round etching processing procedure TD/DRM art quartz dead rings of semiconductor |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201810306112.8A CN108655086A (en) | 2018-04-08 | 2018-04-08 | The regeneration method of 8 cun of crystal round etching processing procedure TD/DRM art quartz dead rings of semiconductor |
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| Publication Number | Publication Date |
|---|---|
| CN108655086A true CN108655086A (en) | 2018-10-16 |
Family
ID=63783208
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|---|---|---|---|
| CN201810306112.8A Pending CN108655086A (en) | 2018-04-08 | 2018-04-08 | The regeneration method of 8 cun of crystal round etching processing procedure TD/DRM art quartz dead rings of semiconductor |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112845397A (en) * | 2020-12-31 | 2021-05-28 | 河南科技大学第一附属医院 | Dry cleaning type cleaner for glass cutting pipe |
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| JPH03152928A (en) * | 1989-11-09 | 1991-06-28 | Sony Corp | Cleaning up process |
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Application publication date: 20181016 |