CN108649005B - 一种半导体晶圆批量刻蚀装置 - Google Patents
一种半导体晶圆批量刻蚀装置 Download PDFInfo
- Publication number
- CN108649005B CN108649005B CN201810493709.8A CN201810493709A CN108649005B CN 108649005 B CN108649005 B CN 108649005B CN 201810493709 A CN201810493709 A CN 201810493709A CN 108649005 B CN108649005 B CN 108649005B
- Authority
- CN
- China
- Prior art keywords
- etching
- wafer
- reaction cavity
- adsorption plate
- product adsorption
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000005530 etching Methods 0.000 title claims abstract description 164
- 239000004065 semiconductor Substances 0.000 title claims abstract description 21
- 235000012431 wafers Nutrition 0.000 claims abstract description 122
- 238000006243 chemical reaction Methods 0.000 claims abstract description 102
- 238000010438 heat treatment Methods 0.000 claims abstract description 29
- 238000002347 injection Methods 0.000 claims abstract description 13
- 239000007924 injection Substances 0.000 claims abstract description 13
- 238000001179 sorption measurement Methods 0.000 claims description 87
- 239000000463 material Substances 0.000 claims description 8
- 229910052802 copper Inorganic materials 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 229910052738 indium Inorganic materials 0.000 claims description 3
- 229910052697 platinum Inorganic materials 0.000 claims description 3
- 229910052709 silver Inorganic materials 0.000 claims description 3
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 abstract description 17
- 150000002500 ions Chemical class 0.000 abstract description 16
- 238000000034 method Methods 0.000 abstract description 14
- 238000004519 manufacturing process Methods 0.000 abstract description 5
- 230000009286 beneficial effect Effects 0.000 abstract description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 3
- 229910052801 chlorine Inorganic materials 0.000 description 3
- 239000000460 chlorine Substances 0.000 description 3
- KZBUYRJDOAKODT-UHFFFAOYSA-N Chlorine Chemical compound ClCl KZBUYRJDOAKODT-UHFFFAOYSA-N 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000000243 solution Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67069—Apparatus for fluid treatment for etching for drying etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
- H01J37/32853—Hygiene
- H01J37/32871—Means for trapping or directing unwanted particles
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67109—Apparatus for thermal treatment mainly by convection
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Power Engineering (AREA)
- Health & Medical Sciences (AREA)
- Epidemiology (AREA)
- Public Health (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Drying Of Semiconductors (AREA)
Abstract
Description
Claims (5)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201810493709.8A CN108649005B (zh) | 2018-05-22 | 2018-05-22 | 一种半导体晶圆批量刻蚀装置 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201810493709.8A CN108649005B (zh) | 2018-05-22 | 2018-05-22 | 一种半导体晶圆批量刻蚀装置 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN108649005A CN108649005A (zh) | 2018-10-12 |
CN108649005B true CN108649005B (zh) | 2020-10-30 |
Family
ID=63757308
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201810493709.8A Active CN108649005B (zh) | 2018-05-22 | 2018-05-22 | 一种半导体晶圆批量刻蚀装置 |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN108649005B (zh) |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2007242869A (ja) * | 2006-03-08 | 2007-09-20 | Tokyo Electron Ltd | 基板処理システム |
JP5323306B2 (ja) * | 2006-07-12 | 2013-10-23 | 東京エレクトロン株式会社 | プラズマエッチング方法およびコンピュータ読取可能な記憶媒体 |
WO2013020275A1 (zh) * | 2011-08-09 | 2013-02-14 | 浙江双友物流器械股份有限公司 | 一种mems压阻式拉压力芯片及传感器的制作方法 |
CN105336563A (zh) * | 2014-07-24 | 2016-02-17 | 北京北方微电子基地设备工艺研究中心有限责任公司 | 刻蚀装置及刻蚀方法 |
CN105702575A (zh) * | 2014-11-25 | 2016-06-22 | 中国科学院微电子研究所 | 半导体器件制造方法 |
CN107799413A (zh) * | 2016-08-30 | 2018-03-13 | 上海新昇半导体科技有限公司 | 刻蚀方法、刻蚀装置及半导体晶圆分割方法 |
-
2018
- 2018-05-22 CN CN201810493709.8A patent/CN108649005B/zh active Active
Also Published As
Publication number | Publication date |
---|---|
CN108649005A (zh) | 2018-10-12 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JP6080291B2 (ja) | 基板処理方法および基板処理装置 | |
JP4191009B2 (ja) | 基板処理装置および基板処理方法 | |
CN108695150B (zh) | 一种半导体晶圆批量刻蚀方法 | |
KR20020095842A (ko) | 반도체 에싱장치 | |
KR20140004087A (ko) | 색소 흡착 장치, 색소 흡착 방법 및 기판 처리 장치 | |
CN108649005B (zh) | 一种半导体晶圆批量刻蚀装置 | |
CN110890292B (zh) | 基板处理装置以及基板处理方法 | |
JP4963994B2 (ja) | 基板処理装置および基板処理方法 | |
CN108666198B (zh) | 一种半导体芯片生产工艺 | |
KR101010312B1 (ko) | 매엽식 기판 처리 장치 및 기판 처리 장치의 압력 조절 방법 | |
CN108713239B (zh) | 基板处理方法及基板处理装置 | |
KR101392379B1 (ko) | 기판처리장치 | |
TW434653B (en) | Stackable processing chamber apparatus | |
JPH06287900A (ja) | 回転式モールド成形機 | |
JP2013243413A (ja) | 基板処理方法および基板処理装置 | |
CN110226216B (zh) | 基板处理装置以及基板处理方法 | |
KR20130074414A (ko) | 박막 제조방법 및 그 제조장치 | |
KR102080760B1 (ko) | 기판처리장치 | |
JP5999625B2 (ja) | 基板処理方法 | |
CN108648995B (zh) | 一种半导体集成电路用硅晶片刻蚀方法 | |
CN220585195U (zh) | 一种用于晶圆的快速热处理设备 | |
JP2002177854A (ja) | 基板処理装置 | |
JP3792473B2 (ja) | 半導体薄膜の形成方法 | |
CN218730792U (zh) | 一种反应离子蚀刻系统 | |
CN116174389B (zh) | 一种单晶硅环用酸洗装置及清洗方法 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20201010 Address after: Kodak 277300 Shandong city in Zaozhuang Province Economic Development Zone West Yicheng Applicant after: SHANDONG HANTURE TECHNOLOGY Co.,Ltd. Address before: 100176 Beijing Daxing Economic and Technological Development Zone Liangshuihe Second Street No. 8 Hospital No. 17 Beijing Dazu Tiancheng Semiconductor Technology Co., Ltd. Applicant before: Xu Yaqin |
|
TA01 | Transfer of patent application right | ||
GR01 | Patent grant | ||
GR01 | Patent grant | ||
PE01 | Entry into force of the registration of the contract for pledge of patent right |
Denomination of invention: A batch etching device for semiconductor wafer Effective date of registration: 20220207 Granted publication date: 20201030 Pledgee: Agricultural Bank of China Limited Zaozhuang Yicheng sub branch Pledgor: SHANDONG HANTURE TECHNOLOGY CO.,LTD. Registration number: Y2022980001391 |
|
PE01 | Entry into force of the registration of the contract for pledge of patent right | ||
PC01 | Cancellation of the registration of the contract for pledge of patent right |
Date of cancellation: 20230201 Granted publication date: 20201030 Pledgee: Agricultural Bank of China Limited Zaozhuang Yicheng sub branch Pledgor: SHANDONG HANTURE TECHNOLOGY CO.,LTD. Registration number: Y2022980001391 |
|
PC01 | Cancellation of the registration of the contract for pledge of patent right | ||
PE01 | Entry into force of the registration of the contract for pledge of patent right |
Denomination of invention: A batch etching device for semiconductor wafer Effective date of registration: 20230206 Granted publication date: 20201030 Pledgee: Agricultural Bank of China Limited Zaozhuang Yicheng sub branch Pledgor: SHANDONG HANTURE TECHNOLOGY CO.,LTD. Registration number: Y2023980032127 |
|
PE01 | Entry into force of the registration of the contract for pledge of patent right | ||
PC01 | Cancellation of the registration of the contract for pledge of patent right |
Granted publication date: 20201030 Pledgee: Agricultural Bank of China Limited Zaozhuang Yicheng sub branch Pledgor: SHANDONG HANTURE TECHNOLOGY CO.,LTD. Registration number: Y2023980032127 |
|
PC01 | Cancellation of the registration of the contract for pledge of patent right |