CN108630759B - 基于黑磷的具有高开关比低亚阀值摆幅的场效应晶体管 - Google Patents
基于黑磷的具有高开关比低亚阀值摆幅的场效应晶体管 Download PDFInfo
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Abstract
本发明提供基于黑磷的具有高开关比低亚阀值摆幅的场效应晶体管,其特征在于:包括设置在最底层的硅衬底,所述硅衬底的顶端设有热氧化的二氧化硅,所述热氧化的二氧化硅的顶端设有薄层黑磷,所述薄层黑磷的左右两侧分别设有漏电极和源电极,所述薄层黑磷利用浸泡在刻蚀溶液中的方法制备,刻蚀温度为室温20‑25℃,所述刻蚀溶液为(1‑50):(1‑50)的2,2,6,6‑四甲基哌啶氧化物和三苯基四氟硼酸碳的二氯甲烷溶液,刻蚀浸泡时间为5min‑7h。本发明的有益效果是得到的黑磷场效应晶体管具有很高的开关比,很低的亚阈值摆幅。
Description
技术领域
本发明属于半导体技术领域,尤其是涉及一种基于黑磷的具有高开关比低亚阀值摆幅的场效应晶体管及其制备方法。
背景技术
经过几十年的快速发展,场效应晶体管的尺寸得到很大程度的减小,极大的提高了计算器的计算速度、功能,同时降低了微处理器的生产成本。然而受到量子效应的影响,其栅极长度的缩减已经逼近物理极限。所以进一步缩小晶体管的长度将面临更大挑战。急需一种新方法、新材料和新的工艺来克服目前纳米尺寸CMOS技术所遇瓶颈,进一步提升性能。
近年来,具有层状结构的黑磷烯,以其比过渡金属硫化物更低有效质量,并且其有效质量是高度各向异性的,受到极大的关注。并且禁带宽度会碎厚度的增加从0.3eV增加到2.0eV。但是单层黑磷不易获得,研究表明5nm左右厚度的黑磷具有很高的空穴迁移率。但是由于在SiO2/Si衬底上制作的黑磷器件,由于磷原子与衬底氧的作用形成P-O键,导致其亚阈值摆幅较高11(1.5-17.2V/decade)。
发明内容
为了克服以上制备薄层黑磷器件的弊端,本发明的目的在于:提供一种采用操作简单,快速的方法来制备薄层黑磷,并通过涂胶,电子束刻蚀(EBL),沉积金属电极,制作出高开关比,低亚阈值摆幅,高电学性能的晶体管。
本发明的技术方案是:
基于黑磷的具有高开关比低亚阀值摆幅的场效应晶体管,包括设置在最底层的硅衬底,所述硅衬底的顶端设有热氧化的二氧化硅,所述热氧化的二氧化硅的顶端设有薄层黑磷,所述薄层黑磷的左右两侧分别设有漏电极和源电极,所述薄层黑磷利用浸泡在刻蚀溶液中的方法制备,刻蚀温度为室温20-25℃,所述刻蚀溶液为(1-50):(1-50)的2,2,6,6-四甲基哌啶氧化物和三苯基四氟硼酸碳的二氯甲烷溶液,刻蚀浸泡时间为5min-7h。
优选的,所述漏电极为Cr/Pd,所述源电极为Cr/Pd。
优选的,所述薄层黑磷的厚度随刻蚀浸泡时间的延长变小,优选为4nm。
优选的,所述基于黑磷的具有高开关比低亚阀值摆幅的场效应晶体管的开关比为106,亚阈值摆幅为450mV/decade,源漏电压差Vds在-40mV~40mV范围内,源漏电流随源漏电压成线性变化,且高度对称。
优选的,所述刻蚀溶液为等摩尔比的2,2,6,6-四甲基哌啶氧化物和三苯基四氟硼酸碳的二氯甲烷溶液。
一种制备基于黑磷的具有高开关比低亚阀值摆幅的场效应晶体管的方法:
(1)片状黑磷转移到SiO2/Si衬底上;
(2)将步骤(1)中所得的样品浸入刻蚀溶液中,于室温20-25℃条件下进行湿法刻蚀,所述刻蚀溶液为摩尔比为(1-50):(1-50)的2,2,6,6-四甲基哌啶氧化物和三苯基四氟硼酸碳的二氯甲烷溶液。
(3)将上述处理过的样品放在匀胶机上,旋涂一层聚甲基丙烯酸甲酯(PMMA),经电子束光刻得到场效应晶体管图案,接着用电子束蒸镀沉积Cr/Pd(5nm/50nm)电极,最后用丙酮洗掉PMMA,制作成黑磷场效应晶体管。
优选的,所述刻蚀溶液中的2,2,6,6-四甲基哌啶氧化物和三苯基四氟硼酸碳的摩尔比为1:1。
优选的,所述2,2,6,6-四甲基哌啶氧化物和三苯基四氟硼酸碳均采用10mmol。
优选的,所述步骤(1)中的片状黑磷通过机械剥离转移到SiO2/Si衬底上。
优选的,所述湿法刻蚀的时间为5min-7h,优选为30-120min。
本发明具有的优点和积极效果是:
1、本发明的操作流程简单,工艺成本低廉,不需价格昂贵的大型仪器就能实现黑磷的减薄。
2、本发明得到的黑磷场效应晶体管具有很高的开关比,很低的亚阈值摆幅。
附图说明
图1是片状黑磷及基于黑磷的晶体管的光学显微镜图。
图例如下:
a:块状黑磷经机械剥离转移到Si/SiO2基底上的光学显微镜图。其厚度为12nm。
b:将1中的样品,在四甲基哌啶氮氧化物和三苯基碳四氟硼酸盐的二氯甲烷溶液中,湿法刻蚀30min后的光学显微镜图。其厚度为4nm。
c:将1中减薄的黑磷器件,经涂胶、电子束刻蚀、金属沉积,制作成的黑磷场效应晶体管后光学显微镜图。
图2是场效应晶体管测试示意图。
图例如下:
1-漏电极Cr/Pd,2-源电极Cr/Pd,3-用四甲基哌啶氮氧化物和三苯基碳四氟硼酸盐溶液减薄的薄层黑磷,4-热氧化的二氧化硅,5-硅衬底,6-半导体分析仪(B1500)。
图3是图1晶体管的输运曲线。
图4是图1晶体管的输出特性曲线。栅极电压分别设置为-7V(a)、-8V(b)、-9V(c)、-10V(d)。
具体实施方式
下面结合附图对本发明做详细说明。
具体实施方式
作为一个实施例,以湿法化学减薄黑磷制作场效应晶体管为例加以说明:
2,2,6,6-四甲基哌啶氧化物购买于天津希恩思生化科技有限公司,三苯基四氟硼酸碳购买于梯希爱(上海)化成工业发展有限公司,二氯甲烷购买于天津市光复精细化工研究所。
一种基于黑磷的具有高开关比低亚阀值摆幅的场效应晶体管,包括设置在最底层的硅衬底5,硅衬底5的顶端设有热氧化的二氧化硅4,热氧化的二氧化硅4的顶端设有用四甲基哌啶氮氧化物和三苯基碳四氟硼酸盐溶液减薄的薄层黑磷3,所述薄层黑磷3的左右两侧分别设有漏电极1Cr/Pd(5nm/50nm)和源电极2Cr/Pd(5nm/50nm)。
一种基于黑磷的具有高开关比低亚阀值摆幅的场效应晶体管的制备方法包括以下步骤:
(1)将少量块状黑磷置于蓝光胶带上,折叠胶带若干次,通过聚二甲基硅氧烷薄膜,将片状黑磷转移到Si/SiO2基底上。光学显微镜图如图1a所示。
(2)在棕色瓶中加入2,2,6,6-四甲基哌啶氧化物(3.1mg,2mmol),三苯基四氟硼酸碳(6.6mg,2mmol)和2mL二氯甲烷,震荡使其溶解。将上述方法得到的片状黑磷浸入溶剂瓶中,于室温浸泡30min。
(3)用镊子夹出基底,经二氯甲烷、异丙醇洗涤、氮气枪吹干得到4nm厚度的黑磷材料。光学显微镜图如图1b所示。
(4)将上述处理过的样品放在匀胶机上,旋涂一层PMMA,经电子束光刻得到场效应晶体管图案,接着用电子束蒸镀沉积Cr/Pd(5nm/50nm)电极,最后用丙酮洗掉PMMA,制作成黑磷场效应晶体管。得到中场效应晶体管。场效应晶体管的光学显微镜图如图1c所示。
(5)将得到的场效应晶体管器件放在半导体分析仪载物台上,将源电压Vd设为20mV,漏电压Vs设为0mV,源漏电压差Vds为20mV,栅极电压Vg设置为从-10V到10V,测试得到图3所示的源漏电流随栅极电压变化曲线,开关比(最大源漏电流除以最小源漏电流)为106,亚阈值摆幅(电流每下降一个数量级,电压的变化)为450mV/decade,由图可知栅极电压从-10V到-8V,在小范围内就可实现本装置的场效应晶体管可迅速开关,灵敏度高。
图4为源漏电流随源漏电压变化曲线,将栅极电压Vg分别设置为-7V、-8V、-9V、-10V,由图可看出源漏电压差Vds在--40mV~40mV范围内,源漏电流随源漏电压成线性变化,且高度对称,说明在负电压条件下为欧姆接触。
以上对本发明的一个实施例进行了详细说明,但所述内容仅为本发明的较佳实施例,不能被认为用于限定本发明的实施范围。凡依本发明申请范围所作的均等变化与改进等,均应仍归属于本发明的专利涵盖范围之内。
Claims (10)
1.基于黑磷的具有高开关比低亚阀值摆幅的场效应晶体管,其特征在于:包括设置在最底层的硅衬底,所述硅衬底的顶端设有热氧化的二氧化硅,所述热氧化的二氧化硅的顶端设有薄层黑磷,所述薄层黑磷的左右两侧分别设有漏电极和源电极,所述薄层黑磷利用浸泡在刻蚀溶液中的方法制备,刻蚀温度为室温20-25℃,所述刻蚀溶液为(1-50):(1-50)的2,2,6,6-四甲基哌啶氧化物和三苯基四氟硼酸碳的二氯甲烷溶液,刻蚀浸泡时间为5min-7h。
2.根据权利要求1所述的基于黑磷的具有高开关比低亚阀值摆幅的场效应晶体管,其特征在于:所述漏电极为Cr/Pd,所述源电极为Cr/Pd。
3.根据权利要求1所述的基于黑磷的具有高开关比低亚阀值摆幅的场效应晶体管,其特征在于:所述薄层黑磷的厚度随刻蚀浸泡时间的延长变小。
4.根据权利要求1所述的基于黑磷的具有高开关比低亚阀值摆幅的场效应晶体管,其特征在于:所述晶体管的开关比为106,亚阈值摆幅为450mV/decade,源漏电压差在-40mV~40mV范围内,源漏电流随源漏电压成线性变化,且高度对称。
5.根据权利要求1所述的基于黑磷的具有高开关比低亚阀值摆幅的场效应晶体管,其特征在于:所述刻蚀溶液为等摩尔比的2,2,6,6-四甲基哌啶氧化物和三苯基四氟硼酸碳的二氯甲烷溶液。
6.一种制备基于黑磷的具有高开关比低亚阀值摆幅的场效应晶体管的方法,其特征在于:包括以下步骤:
(1)片状黑磷转移到SiO2/Si衬底上;
(2)将步骤(1)中所得的样品浸入刻蚀溶液中,于室温20-25℃条件下进行湿法刻蚀,所述刻蚀溶液为摩尔比为(1-50):(1-50)的2,2,6,6-四甲基哌啶氧化物和三苯基四氟硼酸碳的二氯甲烷溶液;
(3)将上述处理过的样品放在匀胶机上,旋涂一层聚甲基丙烯酸甲酯,经电子束光刻得到场效应晶体管图案,接着用电子束蒸镀沉积Cr/Pd电极,最后用丙酮洗掉聚甲基丙烯酸甲酯,制作成黑磷场效应晶体管。
7.根据权利要求6所述的一种制备基于黑磷的具有高开关比低亚阀值摆幅的场效应晶体管的方法,其特征在于:所述刻蚀溶液中的2,2,6,6-四甲基哌啶氧化物和三苯基四氟硼酸碳的摩尔比为1:1。
8.根据权利要求6所述的一种制备基于黑磷的具有高开关比低亚阀值摆幅的场效应晶体管的方法,其特征在于:所述2,2,6,6-四甲基哌啶氧化物和三苯基四氟硼酸碳均采用10mmol。
9.根据权利要求6所述的一种制备基于黑磷的具有高开关比低亚阀值摆幅的场效应晶体管的方法,其特征在于:所述步骤(1)中的片状黑磷通过机械剥离转移到SiO2/Si衬底上。
10.根据权利要求6所述的一种制备基于黑磷的具有高开关比低亚阀值摆幅的场效应晶体管的方法,其特征在于:所述湿法刻蚀的时间为30-120min。
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