CN108602984B - Epoxy resin composition for sealing semiconductor device and semiconductor device sealed by using the same - Google Patents
Epoxy resin composition for sealing semiconductor device and semiconductor device sealed by using the same Download PDFInfo
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- CN108602984B CN108602984B CN201780007822.4A CN201780007822A CN108602984B CN 108602984 B CN108602984 B CN 108602984B CN 201780007822 A CN201780007822 A CN 201780007822A CN 108602984 B CN108602984 B CN 108602984B
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- C08K5/00—Use of organic ingredients
- C08K5/16—Nitrogen-containing compounds
- C08K5/34—Heterocyclic compounds having nitrogen in the ring
- C08K5/3467—Heterocyclic compounds having nitrogen in the ring having more than two nitrogen atoms in the ring
- C08K5/3477—Six-membered rings
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- C08L63/00—Compositions of epoxy resins; Compositions of derivatives of epoxy resins
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
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Abstract
The present invention relates to an epoxy resin composition for sealing a semiconductor device, which includes an epoxy resin, a curing agent, an inorganic filler, and a triazine compound represented by chemical formula 8, and a semiconductor device sealed by using the same.
Description
Technical Field
The present invention relates to an epoxy resin composition for encapsulating a semiconductor device and a semiconductor device encapsulated using the same. More particularly, the present invention relates to an epoxy resin composition for encapsulating a semiconductor device, which has good crack resistance and good adhesive strength to a lead frame formed of various materials, and a semiconductor device encapsulated using the same.
Background
Recently, it has been found that lead (Pb) contained in waste electric/electronic products has an adverse effect on human bodies, and the amount of elution of lead (Pb) is regulated to 0.05 to 0.3 mg per liter of ground water in many countries. In particular, the use of lead is actively legislated in europe, and regulations for inorganic elements such as lead, mercury, cadmium, and hexavalent chromium and brominated organic flame retardants are being enforced according to regulations restricting hazardous substances (RoHS).
Therefore, before the above regulations are implemented, research has been actively conducted to replace toxic substance-containing components with environmentally friendly materials in electric/electronic products. In particular, development of a lead-free (Pb-free) component has been carried out.
In overseas, lead-free solders are generally used for components applied to semiconductor devices, and there is a tendency to gradually replace tin-lead (Sn-Pb) plating applied to lead frames with lead-free plating. As lead-free plating methods developed so far to replace the existing tin-lead plating, pure Sn plating and Ni — Pd pre-plating may be recommended.
However, pure tin plating is required to overcome the problem of whiskers, and it is expected that a considerable time is required to apply pure tin plating to mass production. Therefore, Ni-Pd-Ag or Ni-Pd-Ag/Au pre-plated frames (PPFs) have been proposed as an alternative to this problem. In europe, in particular, active research has been conducted to use a PPF lead frame instead of a copper lead frame.
However, such a PPF lead frame exhibits very low adhesive strength to an epoxy resin composition used as an encapsulation material, and may be peeled off from the epoxy resin composition, compared to a typical alloy or copper-based lead frame in the related art, thereby causing significant deterioration in reliability.
In particular, post-soldering reliability tends to significantly depend on the adhesive strength at the interface between the cured product of the epoxy resin composition and the semiconductor device or the lead frame thereof. Therefore, the decrease in the interface adhesive strength causes delamination of the encapsulating material, thereby causing cracks to occur in the semiconductor device. Although an amine coupling agent is added to an epoxy resin composition to improve adhesive strength at an interface between a semiconductor device and an encapsulating material in the related art, it is difficult for such an epoxy resin composition to ensure sufficient adhesive strength with respect to a PPF lead frame.
Therefore, there is a need to develop an epoxy resin composition capable of improving adhesive strength with respect to a lead frame (such as a PPF lead frame) formed of various materials.
Korean patent publication No. 2008-0062440 discloses a background art of the present invention.
Disclosure of Invention
Technical problem
An object of the present invention is to provide an epoxy resin composition for encapsulating a semiconductor device, which exhibits good adhesive strength with respect to a lead frame (particularly, PPF lead frame) of a semiconductor device.
Another object of the present invention is to provide a semiconductor device encapsulated by an epoxy resin composition for encapsulating a semiconductor device to provide good crack resistance when mounted on a substrate.
Technical scheme
One aspect of the present invention provides an epoxy resin composition for encapsulating a semiconductor device, comprising: an epoxy resin, a curing agent, an inorganic filler, and a triazine compound represented by formula 8:
[ formula 8]
In formula 8, X and Y are each independently substituted or unsubstituted C1-20Alkyl or substituted or unsubstituted C6-20An aryl group; e is NH, O or S; r16、R17、R18、R19And R20Each independently hydrogen, hydroxyl, amine or thiol (mercapto); and n is1、n2、n3、n4And n5Each independently is an integer from 0 to 5.
In formula 8, R16、R17、R18、R19And R20At least one of which may be a hydroxyl group, an amine group or a thiol group. Specifically, R17May be a hydroxyl group, an amine group or a thiol group.
In formula 8, at least one of X and Y may be a compound represented by formula 9:
[ formula 9]
In formula 9, is a linking group, and E, R16、R17、R18、R19、R20、n1、n2、n3、n4And n5The same as in the compound represented by formula 8.
In one embodiment, the triazine compound may be a compound represented by formula 10:
[ formula 10]
In formula 10, E, R16、R17、R18、R19、R20、n1、n2、n3、n4And n5May be the same as in the compound represented by formula 8.
The triazine compound represented by formula 8 may be present in the epoxy resin composition in an amount of about 0.01% (wt%) to about 0.5 wt% by weight.
Specifically, the epoxy resin composition may include: about 0.1 to about 17 wt% of an epoxy resin, about 0.1 to about 13 wt% of a curing agent, about 70 to about 95 wt% of an inorganic filler, and about 0.01 to about 0.5 wt% of a triazine compound represented by formula 8.
The epoxy resin composition may further include at least one of a curing accelerator, a coupling agent, a mold release agent, and a colorant.
Another aspect of the present invention provides a semiconductor device encapsulated by the epoxy resin composition according to the present invention. The semiconductor device may include a lead frame pre-plated with a nickel and palladium containing material.
Advantageous effects
The epoxy resin composition according to the present invention exhibits good adhesive strength with respect to a lead frame of a semiconductor device, particularly a PPF lead frame.
In addition, the semiconductor device encapsulated by the epoxy resin composition according to the present invention exhibits good crack resistance when mounted on a substrate by soldering or the like.
Drawings
Fig. 1 shows a sample for measuring adhesive strength. (A) Is a plan view of the sample and (B) is a sectional view of the sample.
Detailed Description
Best mode
Hereinafter, embodiments of the present invention will be described in detail.
A detailed description of known functions and configurations that may unnecessarily obscure the present subject matter will be omitted.
As used herein, the terms "comprises," "comprising," "includes" and/or "including" specify the presence of stated features, integers, steps, operations, elements, components, and/or combinations thereof, but do not preclude the presence or addition of other features, integers, steps, operations, elements, components, and/or groups thereof. In addition, the singular forms "a", "an" and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise.
Unless otherwise stated, the component analysis takes into account margin of error.
Further, "X to Y" as used herein, which represents a range of numerical values, means "greater than or equal to X and less than or equal to Y".
Furthermore, as used herein, the term "substituted" in the expression "substituted or unsubstituted" means that at least one hydrogen atom in the functional group is replaced with a hydroxyl group, a halogen, an amino group, an amine group, a nitro group, a carboxyl group, an amino group, a carboxyl group,Cyano, oxo, thiol, C1-20Alkyl radical, C1-20Haloalkyl, C6-30Aryl radical, C3-30Heteroaryl group, C3-10Cycloalkyl radical, C3-10Heterocycloalkyl radical, C7-30Arylalkyl radical or C1-30Heteroalkyl group substitution. Herein, "halogen" means fluorine, chlorine, iodine or bromine.
The epoxy resin composition for encapsulating a semiconductor device according to the present invention includes an epoxy resin, a curing agent, an inorganic filler and a triazine compound.
Hereinafter, each of the components of the epoxy resin composition according to the present invention will be described in detail.
Epoxy resin
The epoxy resin according to the present invention may be selected from any epoxy resin generally used for encapsulating semiconductor devices. Specifically, the epoxy resin may include an epoxy compound having at least two epoxy groups per molecule. Examples of the epoxy resin may include epoxy resins obtained by epoxidation of a condensate of phenol or alkylphenol with hydroxybenzaldehyde, phenol novolac type epoxy resins, cresol novolac type epoxy resins, multifunctional epoxy resins, naphthol novolac type epoxy resins, bisphenol a/bisphenol F/bisphenol AD novolac type epoxy resins, glycidyl ethers of bisphenol a/bisphenol F/bisphenol AD, bishydroxybiphenyl type epoxy resins, dicyclopentadiene epoxy resins, and the like. More specifically, the epoxy resin may include at least one of a cresol novolac type epoxy resin, a multifunctional epoxy resin, a phenol aralkyl type epoxy resin, and a biphenyl type epoxy resin.
Examples of the multifunctional epoxy resin may include compounds represented by formula 1.
[ formula 1]
In [ formula 1]]Wherein R1, R2, R3, R4 and R5 are each independently a hydrogen atom or C1-10Alkyl, R6 and R7 are each independently a hydrogen atom, methyl or ethyl, and a is an integer of 0 to 6. Specifically, R1, R2, R3, R4 and R5 may each independently be a hydrogen atom, a methyl group, an ethyl group, a propyl group, an isopropyl group, an n-butyl group, an isobutyl group, a tert-butyl group, a pentyl group or a hexyl group, and R6 and R7 may be hydrogen atoms, but are not limited thereto.
The multifunctional epoxy resin represented by [ formula 1] can suppress deformation of a package and improve rapid curing, delay (latency), and maintenance, while ensuring good strength and adhesion of the cured product.
More specifically, the polyfunctional epoxy resin composition may be a trisphenol alkane type epoxy resin such as a trisphenol methane type epoxy resin, a trisphenol propane type epoxy resin, or the like.
Examples of the phenol aralkyl type epoxy resin may include a novolac type phenol aralkyl type epoxy resin including biphenyl derivatives represented by formula 2.
[ formula 2]
In [ formula 2], b is in the range of 1 to 7 on average.
The phenol aralkyl type epoxy resin of [ formula 2] forms a structure having a biphenyl group in a phenol skeleton to provide good properties in terms of hygroscopicity, toughness, oxidation resistance, and crack resistance, and has a low crosslinking density to form a scorched layer when burned at high temperature while ensuring a certain degree of flame retardancy.
Examples of the biphenyl type epoxy resin may include a compound represented by formula 3:
[ formula 3]
In [ formula 3]]Wherein R8, R9, R10, R11, R12, R13, R14 and R15 are each independently C1-4Alkyl and c has an average value in the range of 0 to 7.
The biphenyl type epoxy resin of [ formula 3] is advantageously used in terms of fluidity and reliability of the resin composition.
These epoxy resins may be used alone or in combination.
These epoxy resins may also be used in the form of an adduct (such as a melt masterbatch) obtained by pre-reacting the epoxy resin with other additives (such as a curing agent, a curing accelerator, a release agent, a coupling agent, and a stress relief agent). Specifically, epoxy resins containing small amounts of chloride, sodium and other ionic impurities may be used to improve moisture resistance.
In the epoxy resin composition, the epoxy resin may be present in an amount of about 0.1 wt% to about 17 wt%, specifically about 3 wt% to about 15 wt%, more specifically about 3 wt% to about 12 wt%. Within this content range of the epoxy resin, the epoxy resin composition can achieve good adhesion and strength after curing.
Curing agent
The curing agent may be selected from any typical curing agent commonly used for encapsulating semiconductor devices, in particular curing agents containing at least two reactive groups.
Examples of the curing agent may include polyvalent phenol compounds such as phenol aralkyl type phenol resins, phenol novolac type phenol resins, Xylok type phenol resins, cresol novolac type phenol resins, naphthol type phenol resins, terpene type phenol resins, polyfunctional phenol resins, dicyclopentadiene phenol resins, novolac type phenol resins prepared from bisphenol a and resol resins, tris (hydroxyphenyl) methane and dihydroxybiphenyl; acid anhydrides such as maleic anhydride and phthalic anhydride; aromatic amines such as m-phenylenediamine, diaminodiphenylmethane and diaminodiphenylsulfone, but not limited thereto.
For example, the curing agent may include at least one of a phenol novolac type phenol resin, a Xylok type phenol resin, a phenol aralkyl type phenol resin, and a multifunctional phenol resin.
The phenol novolac-type phenol resin may be, for example, a phenol novolac-type phenol resin represented by [ formula 4 ]:
[ formula 4]
(in [ formula 4], d ranges from 1 to 7).
The phenol novolac-type phenol resin represented by formula 4 has a short distance between crosslinking points to increase the glass transition temperature of the cured product by increasing the crosslinking density upon reaction with the epoxy resin, thereby suppressing warpage of the semiconductor package by reducing the linear expansion coefficient of the cured product.
The phenol aralkyl type phenol resin may be, for example, a phenol aralkyl type phenol resin having a novolac structure of a biphenyl derivative represented by [ formula 5 ]:
[ formula 5]
(in [ formula 5], the average value of e ranges from 1 to 7).
The phenol aralkyl type phenol resin represented by formula 5 forms a scorched layer by reacting with an epoxy resin to prevent transfer of ambient heat and oxygen, thereby improving flame retardancy.
Further, the Xylok type phenol resin may be, for example, a Xylok type phenol resin represented by [ formula 6 ]:
[ formula 6]
(in [ formula 6], the average value of f ranges from 0 to 7).
The Xylok-type phenol resin represented by formula 6 is advantageously used to improve the flowability and reliability of the resin composition.
The polyfunctional phenol resin may be, for example, a polyfunctional phenol resin including a repeating unit represented by [ formula 7 ]:
[ formula 7]
(in [ formula 7], g is in the range of 1 to 7 on average).
The polyfunctional phenol resin including the repeating unit represented by formula 7 is used to improve warpage suppression of the epoxy resin composition at high temperature.
These curing agents may be used alone or in combination.
Further, these curing agents may be used in the form of an adduct (such as a melt masterbatch) obtained by pre-reacting an epoxy resin with additives (such as a curing catalyst, a mold release agent, a coupling agent, and a stress relief agent).
In epoxy resin compositions used to encapsulate semiconductor devices, the curing agent may be present in an amount of about 0.1 wt% to about 13 wt%, specifically about 0.1 wt% to about 10 wt%, more specifically about 0.1 wt% to about 8 wt%. Within this content range of the curing agent, the epoxy resin composition can exhibit good properties in terms of the degree of curing and strength of a cured product formed from the epoxy resin composition.
The composition ratio of the epoxy resin and the curing agent can be adjusted according to the mechanical properties and moisture resistance of the semiconductor package. For example, the stoichiometric ratio of epoxy resin to curing agent can range from about 0.95 to about 3, specifically from about 1 to about 2, more specifically from about 1 to about 1.75. Within this range, the epoxy resin composition can achieve excellent strength after curing.
Inorganic filler
The inorganic filler is used to improve the mechanical strength and stress reduction of the epoxy resin composition. The inorganic filler may be selected from any inorganic fillers without limitation so long as the inorganic filler can be used to encapsulate a semiconductor device. Examples of the inorganic filler may include fused silica, crystalline silica, calcium carbonate, magnesium carbonate, alumina, magnesium oxide, clay, talc, calcium silicate, titanium oxide, antimony oxide, glass fiber, and the like. These inorganic fillers may be used alone or in combination.
Specifically, fused silica having a low linear expansion coefficient is used to reduce the stress. Fused silica refers to amorphous silica having a true specific gravity of about 2.3 or less, and may be produced by melting crystalline silica or may include amorphous silica prepared from various materials. Although the shape and particle size of the fused silica are not particularly limited, it is desirable that a mixture of about 50 wt% to about 99 wt% of spherical fused silica having an average particle size of about 5 μm to about 30 μm and about 1 wt% to about 50 wt% of spherical fused silica having an average particle size of about 0.001 μm to about 1 μm be present in an amount of about 40 wt% to about 100 wt%, based on the total amount of the inorganic filler. Further, depending on the intended use of the resin composition, the maximum particle diameter of the fused silica may be adjusted to any one of about 45 μm, about 55 μm and about 75 μm. Although the spherical fused silica may contain conductive carbon as foreign matter on the surface thereof, it is important to select a material in which less polar foreign matter invades.
The amount of the inorganic filler varies depending on the desired characteristics such as moldability, stress and strength at high temperature. In one embodiment, the inorganic filler may be present in the epoxy resin composition in an amount of about 70 wt% to about 95 wt%, for example about 80 wt% to about 90 wt% or about 83 wt% to about 97 wt%. In this range of the inorganic filler, the epoxy resin composition can secure flame retardancy, fluidity and reliability.
Triazine compounds
The triazine compound is used to improve adhesion of the epoxy resin composition to a lead frame plated with silver or gold or a lead frame pre-plated with a material containing nickel and palladium, and may include a compound represented by formula 8.
[ formula 8]
In formula 8, X and Y are each independently substituted or unsubstituted C1-20Alkyl or substituted or unsubstituted C6-20An aryl group; e is NH, O orS；R16、R17、R18、R19And R20Each independently hydrogen, hydroxyl, amine or thiol; and n is1、n2、n3、n4And n5Each independently an integer from 0 to 5.
Specifically, in formula 8, R16、R17、R18、R19And R20At least one of which may be a hydroxyl group, an amine group or a thiol group. More specifically, R17May be a hydroxyl group, an amine group or a thiol group. When a hydroxyl, amine or thiol group is coupled to R17The epoxy resin composition has an excellent effect of improving the adhesion.
At least one of X and Y may be a functional group represented by formula 9.
[ formula 9]
In formula 9, is a linking group, and E, R16、R17、R18、R19、R20、n1、n2、n3、n4And n5The same as those of formula 8.
In one embodiment, the triazine compound may be a compound represented by formula 10.
[ formula 10]
In formula 10, E, R16、R17、R18、R19、R20、n1、n2、n3、n4And n5The same as those of formula 8.
The triazine compound contains a large amount of N having high electronegativity, and thus improves adhesion to metals.
In the epoxy resin composition, the triazine compound represented by [ formula 8] may be present in an amount of about 0.01 wt%, 0.02 wt%, 0.03 wt%, 0.04 wt%, 0.05 wt%, 0.06 wt%, 0.07 wt%, 0.08 wt%, 0.09 wt%, 0.10 wt%, 0.15 wt%, 0.20 wt%, 0.25 wt%, 0.30 wt%, 0.35 wt%, 0.40 wt%, 0.45 wt%, or 0.50 wt%. Further, the triazine compound represented by [ formula 8] may be present in an amount ranging from one of the values set forth above to another of the values set forth above. For example, the triazine compound represented by [ formula 8] may be present in the epoxy resin composition in an amount of about 0.01 to about 0.5 wt%, particularly about 0.01 to about 0.3 wt%. Within this range of the triazine compound, the epoxy resin composition exhibits significantly improved adhesion with respect to the lead frame.
Other Components
The epoxy resin composition according to the present invention may further include at least one of a curing accelerator, a coupling agent, a mold release agent, and a colorant.
Curing accelerator
The curing accelerator is used to accelerate the reaction between the epoxy resin and the curing agent. Examples of the curing accelerator may include tertiary amines, organometallic compounds, organophosphorus compounds, imidazole compounds, boron compounds, and the like. Examples of the tertiary amine may include benzyldimethylamine, triethanolamine, triethylenediamine, dimethylaminoethanol, tris (dimethylaminomethyl) phenol, 2-2- (dimethylaminomethyl) phenol, 2,4, 6-tris (diaminomethyl) phenol, and salts of tris-2-ethylhexanoic acid.
Examples of the organic metal compound may include chromium acetylacetonate, zinc acetylacetonate, and nickel acetylacetonate. Examples of the organophosphorus compound may include tris (4-methoxy) phosphine, tetrabutylphosphonium bromide, tetraphenylphosphonium bromide, phenylphosphine, diphenylphosphine, triphenylphosphine triphenylborane and triphenylphosphine-1, 4-benzoquinone adduct. Examples of the imidazole compound may include 2-phenyl-4-methylimidazole, 2-phenylimidazole, 2-aminoimidazole, 2-methyl-1-vinylimidazole, 2-ethyl-4-methylimidazole and 2-heptadecylimidazole, but are not limited thereto. Examples of the boron compound may include tetraphenylphosphonium-tetraphenylborate, triphenylphosphine tetraphenylborate, trifluoroborane-n-hexylamine, trifluoroborane monoethylamine, tetrafluoroborane triethylamine and tetrafluoroborane amine. In addition, 1, 5-diazabicyclo [4.3.0] non-5-ene (DBN), 1, 8-diazabicyclo [5.4.0] undec-7-ene (DBU), and phenol novolac resin salts may be used, but are not limited thereto.
More specifically, these organic phosphorus compounds, boron compounds, amine compounds or imidazole compounds may be used alone or in combination as the curing accelerator. The curing accelerator may be used in the form of an adduct obtained by previously reacting these compounds with an epoxy resin or a curing agent.
The cure accelerator can be present in an amount of about 0.01 wt% to about 2 wt%, specifically about 0.02 wt% to about 1.5 wt%, more specifically about 0.05 wt% to about 1 wt%, based on the total weight of the epoxy resin composition. Within this range, the curing accelerator can accelerate curing of the epoxy resin composition while ensuring a good degree of curing.
Coupling agent
The coupling agent is used to improve the interfacial strength between the epoxy resin and the inorganic filler, and may include, for example, a silane coupling agent. The silane coupling agent may be selected from any silane coupling agents used in the art as long as the silane coupling agent can react between the epoxy resin and the inorganic filler to improve the interfacial strength between the epoxy resin and the inorganic filler. Examples of the silane coupling agent include epoxy silane, amino silane, ureido silane, and mercaptosilane. These coupling agents may be used alone or in combination.
The coupling agent can be present in an amount of about 0.01 wt% to about 5 wt%, specifically about 0.05 wt% to about 3 wt%, more specifically about 0.1 wt% to about 2 wt%, based on the total amount of the epoxy resin composition. Within this range, the coupling agent increases the strength of the cured product formed from the epoxy resin composition.
Release agent
The release agent may include at least one selected from the group consisting of paraffin wax, ester wax, higher fatty acid metal salt, natural fatty acid, and natural fatty acid metal salt.
The release agent may be present in the epoxy resin composition in an amount of about 0.1 wt% to about 1 wt%.
Coloring agent
The colorant is used for laser marking the packaging material of the semiconductor device and may be selected from typical colorants used in the related art. For example, the colorant may include at least one of carbon black, titanium nitride, copper hydroxide phosphate (copper hydroxide phosphate), iron oxide, and mica.
The colorant can be present in an amount of about 0.01 wt% to about 5 wt%, specifically about 0.05 wt% to about 3 wt%, more specifically about 0.1 wt% to about 2 wt%, based on the total amount of the epoxy resin composition.
In addition, the epoxy resin composition may further include a stress releasing agent such as modified silicone oil, silicone powder and silicone resin; an antioxidant such as tetrakis [ methylene-3- (3, 5-di-t-butyl-4-hydroxyphenyl) propionate ] methane or the like, so as not to adversely affect the object of the present invention.
In a general method for producing an epoxy resin composition using the above components, a predetermined amount of the components are uniformly mixed using a Henschel mixer or a Lodige mixer, followed by melt-kneading using a roll mill or a kneader, cooling, and pulverization, thereby obtaining a final powder product.
As a method for encapsulating a semiconductor device using the epoxy resin composition, low-pressure transfer molding may be used. Alternatively, injection molding or casting may be used for the molding of the epoxy resin composition.
By these methods, the epoxy resin composition can be applied to a copper lead frame (e.g., a silver-plated copper lead frame), a nickel alloy lead frame, a lead frame obtained by pre-plating a material containing nickel and palladium on the lead frame and then plating using at least one of silver (Ag) and gold (Au), a PCB, etc., to encapsulate a semiconductor device, thereby manufacturing a semiconductor package in which the semiconductor device is encapsulated by the epoxy resin composition.
Modes for carrying out the invention
Next, the present invention will be described in more detail with reference to some examples. It should be understood that these examples are for illustration only and are not to be construed as limiting the invention in any way.
For the sake of clarity, a description of details obvious to those skilled in the art will be omitted.
Examples
The details of the components used in examples and comparative examples are as follows.
(A) Epoxy resin
(a1) Biphenyl type Epoxy Resin (YX-4000, Japan Epoxy Resin Co., Ltd.) was used
(a2) Biphenyl novolac type epoxy resin (NC-3000, Nippon Kayaku Co., Ltd.) was used
(B) Curing agent
(b1) Phenol novolac resin (DL-92, Meiwa Co., Ltd.) was used
(b2) A biphenyl novolac type resin (MEH-7851SS, Meiwa Co., Ltd.) was used
(C) Curing accelerator: TPP-k (triphenylphosphine, Hokko Chemical Co., Ltd.; Ltd.) was used
(D) Inorganic filler: a mixture of spherical fused silica having an average particle diameter of 20 μm and spherical fused silica having an average particle diameter of 0.5 μm (weight ratio: 9:1) was used
(E) Coupling agent
(e1) Using a mercaptopropyl trimethoxysilane coupling agent (KBM-803, Shin-Etsu Chemical Co., Ltd.)
(e2) Using methyltrimethoxysilane coupling agent (SZ-6070, Dow-Corning Co., Ltd.)
(e3) An amine silane coupling agent (KBM-573, Shin-Etsu Chemical Co., Ltd.) was used
(F) Triazine compounds
(f1) Use of a triazine compound represented by the formula f1
Phenol, 2,2' - [1,3, 5-triazine-2, 4, 6-triyltris (oxy) ] trisone-
(f2) Use of a triazine compound represented by the formula f2
Aniline, 4,4' - [1,3, 5-triazine-2, 4, 6-triyltris (oxy) ] trisone-
(f3) Use of a triazine compound represented by the formula f3
[ formula f3]
1,3, 5-triazine-2, 4, 6-triamine, N2,N4,N6-tris (4-aminophenyl) -one
(f4) Use of a triazine compound represented by the formula f4
[ formula f4]
Benzyl alcohol, 4,4' - [1,3, 5-triazine-2, 4, 6-triyltris (sulfur) ] trisone-
(f5) Use of a triazine compound represented by the formula f5
[ formula f5]
Aniline, 4,4' - [1,3, 5-triazine-2, 4, 6-triyltris (sulfur) ] trisone-
(f6) Use of a triazine compound represented by the formula f6
[ formula f6]
1,3, 5-triazine, 2,4, 6-tris [4- (2-oxiranylmethyl) phenoxy ] -
(G) Colorant: carbon black (MA-600B, Mitsubishi Chemical Co., Ltd.) was used
(H) Releasing agent: using carnauba wax
Examples 1 to 5 and comparative examples 1 to 2
The components weighed as shown in table 1 were uniformly mixed at 25 to 30 ℃ for 30 minutes using a Henschel mixer (KSM-22, KEUM sun MACHINERY co. ltd.), and melt-kneaded at 110 ℃ (max) for 30 minutes by a continuous kneader, followed by cooling to 10 to 15 ℃ and pulverization, thereby preparing an epoxy resin composition for encapsulating semiconductor devices.
[ Table 1]
[ unit: wt% ]
The following properties of the epoxy resin compositions prepared in examples 1 to 5 and comparative examples 1 and 2 were evaluated and the measurement results are shown in table 2.
Evaluation of Properties
(1) Flow (in): according to EMMI-1-66, a transfer molding press was used at 70kgf/cm in a test mold2The flow length of each epoxy resin composition was measured at 175 ℃. Higher values indicate better flowability.
(2) Glass transition temperature (. degree. C.): the glass transition temperature of each epoxy resin composition was measured using a thermomechanical analyzer (TMA). Here, TMA was set to heat the resin composition from 25 ℃ to 300 ℃ at a rate of 10 ℃/min.
(3) Adhesive strength (kgf): lead frames formed of the materials shown in table 2 and having a size corresponding to a mold for measuring adhesive strength were prepared, and 70kgf/m at a mold temperature of 170 to 180 ℃2Using the epoxy resin composition of table 1 under the conditions of a clamping pressure of 1,000psi, a transfer pressure of 1,000psi and a transfer speed of 0.5cm/s to 1cm/s for 120 seconds, thereby preparing a sample as shown in fig. 1. Here, the contact area between the lead frame and the epoxy resin composition was set to 40. + -. 1mm2。
Each specimen was placed in an oven at 170 ℃ to 180 ℃ and post-cured for 4 hours, followed by measurement of the adhesive strength I. Then, each sample was left at 60 ℃ and 60% RH for 120 hours, and IR reflow was performed three times at 260 ℃ for 30 seconds, followed by measurement of adhesive strength II. The adhesive strength was measured using a Universal Test Machine (UTM). In the measurement, the adhesive strength of 12 specimens was measured and the average value of the adhesive strength of 12 specimens was recorded.
(4) Flame retardancy: flame retardancy measurements according to the UV 94V-0 test method
(5) Reliability: a semiconductor package was fabricated by encapsulating a semiconductor device including a lead frame pre-plated with nickel-palladium-gold using the epoxy resin composition shown in table 1. Each semiconductor package was placed in an oven at 175 ℃ followed by two hours of post-curing. The semiconductor packages were then dried at 125 ℃ for 24 hours, placed at 60 ℃ and 60% RH for 120 hours, and then subjected to IR reflow at 260 ℃ for 30 seconds, repeated three times. Thereafter, the semiconductor package was observed by a nondestructive C-SAM (scanning acoustic microscope) and an optical microscope. Of the 200 semiconductor packages, the number of semiconductor packages in which cracks were generated was recorded.
[ Table 2]
As shown in table 2, the epoxy resin compositions of examples 1 to 5 including the triazine compound represented by formula 8 had high adhesive strength with respect to lead frames of various materials and exhibited good properties in terms of flowability, reliability (crack resistance) and degree of curing. In contrast, the epoxy resin composition of comparative example 1 containing no triazine compound and the epoxy resin composition of comparative example 2 prepared using a triazine compound containing a terminal epoxy group had negative crack resistance and the adhesive strength with respect to Ag-plated lead frames and PPF lead frames was lower than those of examples 1 to 5.
Claims (6)
1. An epoxy resin composition for encapsulating a semiconductor device, comprising:
0.1 to 17 wt% of an epoxy resin, 0.1 to 13 wt% of a curing agent, 70 to 95 wt% of an inorganic filler, and 0.01 to 0.5 wt% of a triazine compound represented by formula 10,
formula 10
In the formula 10, the first and second groups,
e is O or S;
R16、R17、R18、R19and R20Each independently hydrogen, hydroxyl, amine, or thiol; and is
n1、n2、n3、n4And n5Each independently is an integer from 0 to 5.
2. The epoxy resin composition of claim 1, wherein R16、R17、R18、R19And R20Is a hydroxyl group, an amine group, or a thiol group.
3. The epoxy resin composition of claim 1, wherein R17Is a hydroxyl group, an amine group, or a thiol group.
4. The epoxy resin composition of claim 1, further comprising:
at least one of a curing accelerator, a coupling agent, a release agent, and a colorant.
5. A semiconductor device encapsulated by the epoxy resin composition according to any one of claims 1 to 4.
6. The semiconductor device of claim 5, wherein the semiconductor device comprises a lead frame pre-plated with a material comprising nickel and palladium.
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| KR10-2016-0012005 | 2016-01-29 | ||
| KR1020160012005A KR101943698B1 (en) | 2016-01-29 | 2016-01-29 | Epoxy resin composition for encapsulating semicomductor device and semiconductor device encapsulated using the same |
| PCT/KR2017/000669 WO2017131390A1 (en) | 2016-01-29 | 2017-01-19 | Epoxy resin composition for sealing semiconductor device and semiconductor device sealed by using same |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1400988A (en) * | 2000-02-15 | 2003-03-05 | 荷兰解决方案研究有限公司 | Thermosetting resin composition |
| JP2005132890A (en) * | 2003-10-28 | 2005-05-26 | Sumitomo Bakelite Co Ltd | Epoxy resin composition and semiconductor device |
| CN101029166A (en) * | 2006-02-27 | 2007-09-05 | 田村化研株式会社 | Thermosetting resin compositions, resin films in b-stage and build-up multi-layer board |
| CN104119643A (en) * | 2013-04-24 | 2014-10-29 | 三星电机株式会社 | Insulating resin composition for printed circuit board, and prepreg, copper-clad laminate and printed circuit board using the same |
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| JP2000038439A (en) * | 1998-07-23 | 2000-02-08 | Dainippon Ink & Chem Inc | Epoxy resin composition |
| JP4869721B2 (en) * | 2006-02-03 | 2012-02-08 | 日東電工株式会社 | Epoxy resin composition for semiconductor encapsulation, method for producing the same, and semiconductor device obtained using the same |
| KR100797967B1 (en) * | 2006-12-31 | 2008-01-24 | 제일모직주식회사 | Epoxy resin composition for encapsulating semiconductor device and semiconductor device??using the same |
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Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1400988A (en) * | 2000-02-15 | 2003-03-05 | 荷兰解决方案研究有限公司 | Thermosetting resin composition |
| JP2005132890A (en) * | 2003-10-28 | 2005-05-26 | Sumitomo Bakelite Co Ltd | Epoxy resin composition and semiconductor device |
| CN101029166A (en) * | 2006-02-27 | 2007-09-05 | 田村化研株式会社 | Thermosetting resin compositions, resin films in b-stage and build-up multi-layer board |
| CN104119643A (en) * | 2013-04-24 | 2014-10-29 | 三星电机株式会社 | Insulating resin composition for printed circuit board, and prepreg, copper-clad laminate and printed circuit board using the same |
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| WO2017131390A1 (en) | 2017-08-03 |
| KR20170090962A (en) | 2017-08-08 |
| KR101943698B1 (en) | 2019-01-29 |
| CN108602984A (en) | 2018-09-28 |
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