CN108602984A - Composition epoxy resin for encapsulated semiconductor device and the semiconductor devices by using its sealing - Google Patents
Composition epoxy resin for encapsulated semiconductor device and the semiconductor devices by using its sealing Download PDFInfo
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- CN108602984A CN108602984A CN201780007822.4A CN201780007822A CN108602984A CN 108602984 A CN108602984 A CN 108602984A CN 201780007822 A CN201780007822 A CN 201780007822A CN 108602984 A CN108602984 A CN 108602984A
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K3/00—Use of inorganic substances as compounding ingredients
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K5/00—Use of organic ingredients
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K5/00—Use of organic ingredients
- C08K5/16—Nitrogen-containing compounds
- C08K5/34—Heterocyclic compounds having nitrogen in the ring
- C08K5/3467—Heterocyclic compounds having nitrogen in the ring having more than two nitrogen atoms in the ring
- C08K5/3477—Six-membered rings
- C08K5/3492—Triazines
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L63/00—Compositions of epoxy resins; Compositions of derivatives of epoxy resins
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
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Abstract
The present invention relates to a kind of composition epoxy resin for encapsulated semiconductor device and by using the semiconductor devices that it is sealed, composition epoxy resin includes epoxy resin, curing agent, inorganic filler and the triaizine compounds indicated by chemical formula 8.
Description
Technical field
The present invention relates to for encapsulating semiconductor devices composition epoxy resin and using its encapsulation semiconductor devices.
More specifically, the invention relates to using for encapsulating the composition epoxy resin of semiconductor devices and using the semiconductor device of its encapsulation
Part, the composition epoxy resin have good crack resistance and the lead frame (lead for being formed by a variety of materials
Frame, lead frame) good adhesive strength.
Background technology
Recently, it is found that the lead (Pb) contained in discarded electrical/electronic product adversely affects human body, in many states
Family, the elution amount of every liter of Lead In Groundwater (Pb) are specified to 0.05 to 0.3 milligram.Particularly, Europe to the use of lead into
It has gone and has energetically made laws, and according to the regulation of limitation harmful substance (RoHS), such as lead, mercury, cadmium and sexavalence will be enforced
The regulation of the inorganic elements such as chromium and bromination organic fire-retardant.
Therefore, before executing above-mentioned regulation, research has been actively developed to use environmentally friendly material in electrical/electronic product
Component of the material substitution containing noxious material.Especially carry out the exploitation of unleaded (no Pb) component.
In overseas, lead-free solder is usually used for the component applied to semiconductor devices, and exists and uses promoter-less knock-out vector
Gradually replace the trend of tin-lead (Sn-Pb) coating applied to lead frame.It is used to substitute existing tin-as what is developed at present
The unleaded electroplating method of lead plating can recommend pure Sn platings and Ni-Pd preplating.
(plating, plating) is to overcome the problems, such as whisker however, it is necessary to pure tin coating, and it is expected that needs considerably long
Pure tin coating could be applied to large-scale production by the time.Therefore, Ni-Pd-Ag or Ni-Pd-Ag/Au preplating frame (PPF) quilt
It is recommended that making alternative solution to solve this problem.Particularly, in Europe, positive research has been carried out to use PPF leads
Frame replaces copper lead frame.
However, in correlative technology field exemplary alloy or copper-based lead frame compared with, this PPF lead frames to
The composition epoxy resin for making encapsulating material shows low-down adhesive strength, and can be shelled from composition epoxy resin
From so as to cause the notable deterioration of reliability.
Particularly, reliability tends to significantly depend on the cured product and semiconductor device of composition epoxy resin after welding
The adhesive strength of interface between part or its lead frame.Therefore, the reduction of interfacial bond strength causes point of encapsulating material
Layer, thus causes to crack in the semiconductor device.Although amine coupling agent is added in composition epoxy resin to improve
The adhesive strength of interface in correlative technology field between semiconductor devices and encapsulating material, but this composition epoxy resin
It is difficult to ensure enough adhesive strengths relative to PPF lead frames.
Therefore, it is necessary to develop the lead frame (such as PPF lead frames) that can improve relative to being formed by a variety of materials
Adhesive strength composition epoxy resin.
Korean Patent Publication No. 2008-0062440 discloses the background technology of the present invention.
Invention content
Technical problem
It is an object of the present invention to provide the composition epoxy resin for encapsulating semiconductor devices, relative to partly leading
The lead frame (especially PPF lead frames) of body device shows good adhesive strength.
It is a further object of the present invention to provide a kind of semiconductor devices, pass through the asphalt mixtures modified by epoxy resin for encapsulating semiconductor devices
Oil/fat composition encapsulates, to provide good crack resistance when in substrate.
Technical solution
One aspect of the present invention provides the composition epoxy resin for encapsulating semiconductor devices, it includes：Asphalt mixtures modified by epoxy resin
Fat, curing agent, inorganic filler and the triaizine compounds indicated by formula 8：
[formula 8]
In formula 8, X and Y are each independently substituted or unsubstituted C1-20Alkyl or substituted or unsubstituted C6-20Virtue
Base；E is NH, O or S；R16、R17、R18、R19And R20Be each independently hydrogen, hydroxyl, amido or mercapto (thiol group,
Sulfydryl)；And n1、n2、n3、n4And n5It is each independently 0 to 5 integer.
In formula 8, R16、R17、R18、R19And R20At least one of can be hydroxyl, amido or mercapto.Specifically,
R17Can be hydroxyl, amido or mercapto.
In formula 8, at least one of X and Y can be the compounds indicated by formula 9：
[formula 9]
In formula 9, * is linking group, and E, R16、R17、R18、R19、R20、n1、n2、n3、n4And n5With indicated by formula 8
It is identical in compound.
In one embodiment, triaizine compounds can be the compound indicated by formula 10：
[formula 10]
In formula 10, E, R16、R17、R18、R19、R20、n1、n2、n3、n4And n5Can in the compound that is indicated by formula 8
It is identical.
Amount of the triaizine compounds indicated by formula 8 in composition epoxy resin can be by weight about 0.01%
(wt%) is to about 0.5wt%.
Specifically, composition epoxy resin may include：About 0.1wt% is to the epoxy resin of about 17wt%, about 0.1wt%
To the curing agent of about 13wt%, the inorganic filler of about 70wt% to about 95wt% and about 0.01wt% to about 0.5wt% by formula
8 triaizine compounds indicated.
Composition epoxy resin may further include in curing accelerator, coupling agent, releasing agent and colorant at least
It is a kind of.
Another aspect of the present invention provides the semiconductor devices encapsulated by composition epoxy resin according to the present invention.Partly lead
Body device may include the lead frame using nickeliferous and palladium material preplating (pre-plate, pre-galvanized).
Advantageous effect
Lead frame (especially PPF lead frame of the composition epoxy resin according to the present invention relative to semiconductor devices
Frame) show good adhesive strength.
Base is mounted on by welding etc. in addition, being worked as by the semiconductor devices that composition epoxy resin according to the present invention encapsulates
Good crack resistance is shown when on plate.
Description of the drawings
Fig. 1 shows the sample for measuring adhesive strength.(A) be sample vertical view and (B) be sample sectional view.
Specific implementation mode
Optimal mode
Hereinafter, embodiments of the present invention be will be described in detail.
The detailed description of obscure present subject matter known function and structure with may not be necessary will be omitted.
As it is used herein, term "comprising", " containing ", " comprising " and/or the stated feature of " containing " specified presence,
Integer, step, operation, element, component and/or a combination thereof, but do not preclude the presence or addition of other feature, integer, step, behaviour
Work, element, component and/or a combination thereof.In addition, singulative "one", "an" and "the" be also intended to include plural form, remove
Non- context is expressly stated otherwise.
Unless otherwise stated, can consider error span (margin, boundary) when component analysis.
In addition, indicating that " X to Y " expression of certain numerical value range " more than or equal to X and is less than as used in this article
Or it is equal to Y ".
In addition, as used herein, the term " substituted " in statement " substituted or unsubstituted " refers in functional group
At least one hydrogen atom is by hydroxyl, halogen, amino, amido, nitro, cyano, oxygen-containing group (oxo group, oxygroup, oxo base
Group), mercapto, C1-20Alkyl, C1-20Halogenated alkyl, C6-30Aryl, C3-30Heteroaryl, C3-10Naphthenic base, C3-10Heterocyclylalkyl,
C7-30Aryl alkyl or C1-30Miscellaneous alkyl replaces.Herein, " halogen " refers to fluorine, chlorine, iodine or bromine.
It is according to the present invention for encapsulate the composition epoxy resin of semiconductor devices to include epoxy resin, curing agent, nothing
Machine filler and triaizine compounds.
Hereinafter, it will be described in detail each of the component of composition epoxy resin according to the present invention.
Epoxy resin
Epoxy resin according to the present invention can be selected from commonly used in any epoxy resin of encapsulation semiconductor devices.Specifically
Ground, epoxy resin may include the epoxide that per molecule has at least two epoxy groups.The example of epoxy resin can be with
Include epoxy resin, the phenol novolak type ring that the epoxidation of the condensation product by phenol or alkyl phenol and hydroxy benzaldehyde obtains
Oxygen resin, cresol novolak type epoxy resin, multi-functional epoxy resin, naphthol novolac type epoxy resin, bisphenol-A/bis-
The phenolic resin varnish type epoxy resin of phenol F/ bisphenol-As D, the glycidol ether of bisphenol-A/Bisphenol F/bisphenol-A D, double xenol type rings
Oxygen resin (bis-hydroxybiphenyl type epoxy resin), DCPD-containing epoxy resin etc..More specifically, ring
Oxygen resin may include cresol novolak type epoxy resin, polyfunctional epoxy resin, phenol aralkyl type epoxy resin and connection
At least one of benzene-type epoxy resin.
The example of polyfunctional epoxy resin may include the compound indicated by formula 1.
[formula 1]
In [formula 1], R1, R2, R3, R4 and R5 are each independently hydrogen atom or C1-10Alkyl, R6 and R7 are respectively independent
Ground is hydrogen atom, methyl or ethyl, and a is integer 0 to 6.Specifically, R1, R2, R3, R4 and R5 can be each independently
Hydrogen atom, methyl, ethyl, propyl, isopropyl, normal-butyl, isobutyl group, tertiary butyl, amyl or hexyl, and R6 and R7 can be
Hydrogen atom, but not limited to this.
The polyfunctional epoxy resin indicated by [formula 1] can inhibit the deformation of packaging and improve rapid curing, delay
(latency) it and safeguards, while ensuring the good strength and adhesiveness of cured article.
More specifically, polyfunctional epoxy resin composition can be trisphenol alkane type epoxy resin, such as trisphenol first
Alkane type epoxy resin, trisphenol propane epoxy resin etc..
The example of phenol aralkyl type epoxy resin may include phenolic varnish type phenol aralkyl type epoxy resin, packet
Include the biphenyl derivatives indicated by formula 2.
[formula 2]
In [formula 2], b is average in the range of 1 to 7.
The phenol aralkyl type epoxy resin of [formula 2] be formed in phenol skeleton with xenyl structure, with hygroscopicity,
Shape when good performance being provided in terms of toughness, inoxidizability and crack resistance, and there is lower crosslink density to burn at high temperature
At char layer, while ensuring a degree of anti-flammability.
The example of biphenyl type epoxy resin may include the compound indicated by formula 3：
[formula 3]
In [formula 3], R8, R9, R10, R11, R12, R13, R14 and R15 are each independently C1-4Alkyl and c's is averaged
Value is in the range of 0 to 7.
In terms of the mobility of resin combination and reliability, the biphenyl type epoxy resin of [formula 3] is advantageously used.
These epoxy resin can be used alone or be applied in combination.
It can also be with by making epoxy resin and other additives (such as curing agent, curing accelerator, releasing agent, coupling
Agent and stress elimination agent) pre-reaction and the form of adduct (such as melting masterbatch) that obtains uses these epoxy resin.Specifically
Ground, can be using the epoxy resin containing a small amount of chlorion, sodium ion and other ionic impurities to improve moisture-proof.
In composition epoxy resin, the amount of epoxy resin can be about 0.1wt% to about 17wt%, particularly from about
3wt% is to about 15wt%, more particularly about 3wt% to about 12wt%.In this content range of epoxy resin, epoxy resin
Good bonding force and intensity may be implemented in composition after hardening.
Curing agent
Curing agent can be selected from commonly used in any Typical cure agent of encapsulation semiconductor devices, especially contain at least two
The curing agent of a reactive group.
The example of curing agent may include multivalence phenolic compounds, such as phenol aralkyl type phenol resin, phenol novolacs
It is type phenol resin, Xylok types phenol resin, cresol novolak type phenol resin, naphthol type phenol resin, terpenes type phenol resin, multifunctional
Phenol resin, DCPD-containing phenolic resin, novolak type phenol resin, the three (hydroxy benzenes prepared by bisphenol-A and resol
Base) methane and dihydroxybiphenyl；Acid anhydrides, such as maleic anhydride and phthalic anhydride；Aromatic amine, such as m-phenylene diamine (MPD), diamino two
Phenylmethane and diaminodiphenylsulfone, but not limited to this.
For example, curing agent may include phenol novolak type phenol resin, Xylok types phenol resin, phenol aralkyl type phenol
At least one of resin and multifunctional phenol resin.
Phenol novolak type phenol resin can be the phenol novolak type phenol resin for example indicated by [formula 4]：
[formula 4]
(in [formula 4], ranging from the 1 to 7 of d).
The phenol novolak type phenol resin indicated by formula 4 between crosslinking points have short distance, with by with epoxy
Increase crosslink density when resin reaction to improve the glass transition temperature of cured product, from there through the line for reducing cured product
The property coefficient of expansion inhibits the warpage of semiconductor packages.
Phenol aralkyl type phenol resin can be the novolac structure containing biphenyl derivatives for example indicated by [formula 5]
Phenol aralkyl type phenol resin：
[formula 5]
(in [formula 5], ranging from the 1 to 7 of the average value of e).
The phenol aralkyl type phenol resin indicated by formula 5 forms char layer by being reacted with epoxy resin, around preventing
Heat and oxygen transfer, to improve anti-flammability.
In addition, Xylok types phenol resin can be the Xylok type phenol resin for example indicated by [formula 6]：
[formula 6]
(in [formula 6], ranging from the 0 to 7 of the average value of f).
The Xylok type phenol resin indicated by formula 6 is advantageously used to improve the mobility and reliability of resin combination.
Multifunctional phenol resin can be the multifunctional phenol resin for for example including the repetitive unit indicated by [formula 7]：
[formula 7]
(in [formula 7], g is average in the range of 1 to 7).
Include the multifunctional phenol resin of the repetitive unit indicated by formula 7 for improving composition epoxy resin at high temperature
Warpage inhibits.
These curing agent can be used alone or be applied in combination.
Furthermore, it is possible to by making epoxy resin and additive (such as curing catalysts, releasing agent, coupling agent and stress
Remover) pre-reaction and the form of adduct (such as melting masterbatch) that obtains uses these curing agent.
In the composition epoxy resin for encapsulating semiconductor devices, the amount of curing agent can be about 0.1wt%
To about 13wt%, particularly from about 0.1wt% is to about 10wt%, more particularly about 0.1wt% to about 8wt%.In this of curing agent
In one content range, in terms of the curing degree of the cured article formed by composition epoxy resin and intensity, epoxy resin group
Good property can be shown by closing object.
The composition ratio of epoxy resin and curing agent can be adjusted according to the mechanical performance of semiconductor packages and moisture-proof.
For example, the stoichiometric ratio of epoxy resin and curing agent can range from about 0.95 to about 3, particularly from about 1 to about 2, it is more special
It is not about 1 to about 1.75.Within the scope of this, excellent intensity may be implemented in composition epoxy resin after hardening.
Inorganic filler
Inorganic filler is used to improve the mechanical strength of composition epoxy resin and stress and reduces.Inorganic filler, which can be selected from, appoints
What inorganic filler is without limiting, as long as inorganic filler can be used for encapsulating semiconductor devices.The example of inorganic filler can
With include fused silica, crystalline silica, calcium carbonate, magnesium carbonate, aluminium oxide, magnesia, clay, talcum, calcium silicates,
Titanium oxide, antimony oxide, glass fibre etc..These inorganic fillers can be used alone or be applied in combination.
Specifically, stress is reduced using the fused silica with low linear expansion coefficient.Fused silica is
It is about 2.3 or smaller amorphous silicas to refer to true specific gravity, and can be produced by melting crystal silica or can
It include the amorphous silica prepared by a variety of materials.Although the shape and grain size of fused silica do not limit particularly
System, but it is appreciated that the average grain diameter of the total amount based on inorganic filler, about 50wt% to about 99wt% are about 5 μm to about 30 μm
Spherical fused silica and about 1wt% to about 50wt% average grain diameter be about 0.001 μm to about 1 μm spherical melting two
The amount of the mixture of silica is about 40wt% to about 100wt%.In addition, the required purposes depending on resin combination,
The maximum particle diameter of fused silica can be adjusted to any one of about 45 μm, about 55 μm and about 75 μm.Although spherical shape is molten
Melting silica can include on the surface thereof that conductive carbon is used as foreign matter, it is important that selecting that wherein to have invaded less polarity different
The material of object.
Depending on the intensity under required characteristic such as mouldability, stress and high temperature, the amount of inorganic filler changes.In a reality
It applies in mode, amount of the inorganic filler in composition epoxy resin can be about 70wt% to about 95wt%, for example, about
80wt% to about 90wt% or about 83wt% to about 97wt%.Within the scope of this of inorganic filler, composition epoxy resin can
To ensure anti-flammability, mobility and reliability.
Triaizine compounds
Triaizine compounds are used to improve composition epoxy resin and are coated with the lead frame of silver or gold or with nickeliferous and palladium
The adhesiveness of the lead frame of material preplating, and may include the compound indicated by formula 8.
[formula 8]
In formula 8, X and Y are each independently substituted or unsubstituted C1-20Alkyl or substituted or unsubstituted C6-20Virtue
Base；E is NH, O or S；R16、R17、R18、R19And R20It is each independently hydrogen, hydroxyl, amido or mercapto；And n1、n2、n3、n4With
n5It is each independently integer 0 to 5.
Specifically, in formula 8, R16、R17、R18、R19And R20At least one of can be hydroxyl, amido or mercapto.
More specifically, R17Can be hydroxyl, amido or mercapto.When hydroxyl, amido or mercapto are coupled to R17Position when, epoxy
Resin combination has the effect of excellent in terms of improving adhesiveness.
At least one of X and Y can be the functional groups indicated by formula 9.
[formula 9]
In formula 9, * is linking group, and E, R16、R17、R18、R19、R20、n1、n2、n3、n4And n5With those of formula 8 phase
Together.
In one embodiment, triaizine compounds can be the compound indicated by formula 10.
[formula 10]
In formula 10, E, R16、R17、R18、R19、R20、n1、n2、n3、n4And n5It is identical as those of formula 8.
Triaizine compounds contain the largely N with high electronegativity, therefore improve the adhesiveness with metal.
In composition epoxy resin, by [formula 8] indicate triaizine compounds amount can be about 0.01wt%,
0.02wt%, 0.03wt%, 0.04wt%, 0.05wt%, 0.06wt%, 0.07wt%, 0.08wt%, 0.09wt%,
0.10wt%, 0.15wt%, 0.20wt%, 0.25wt%, 0.30wt%, 0.35wt%, 0.40wt%, 0.45wt% or
0.50wt%.In addition, the amount of the triaizine compounds indicated by [formula 8] can be from one of numerical value described above to above
In the range of another numerical value illustrated.For example, amount of the triaizine compounds indicated by [formula 8] in composition epoxy resin
It can be about 0.01wt% to about 0.5wt%, particularly from about 0.01wt% to about 0.3wt%.In the range of triaizine compounds
Adhesiveness interior, that composition epoxy resin shows to significantly improve relative to lead frame.
Other components
Composition epoxy resin according to the present invention may further include curing accelerator, coupling agent, releasing agent and
At least one of toner.
Curing accelerator
Curing accelerator is for promoting reacting between epoxy resin and curing agent.The example of curing accelerator may include
Tertiary amine, organo-metallic compound, organic phosphorus compound, imidazolium compounds, boron compound etc..The example of tertiary amine may include benzyl
Dimethylamine, triethanolamine, triethylenediamine, dimethylaminoethanol, three (dimethylaminomethyl) phenol, 2-2- (diformazans
Base amino methyl) phenol, 2,4,6- tri- (bis aminomethyl) phenol and three -2 ethyl hexanoic acids salt.
The example of organo-metallic compound may include chromium acetylacetonate, zinc acetylacetonate and nickel acetylacetonate.Organophosphor
The example of compound may include three (4- methoxyl groups) phosphines, Si butyl phosphonium bromide, 4-phenyl phosphonium bromide, Phenylphosphine, diphenylphosphine,
Triphenylphosphine, triphenylphosphine triphenylborane and triphenylphosphine -1,4- benzoquinones adducts.The example of imidazolium compounds may include
2- phenyl -4-methylimidazole, 2-methylimidazole, 2- phenylimidazoles, 2- aminooimidazoles, 2- methyl-1s-vinyl imidazole, 2- second
Base -4-methylimidazole and 2- heptadecyl imidazoles, but not limited to this.The example of boron compound may include-four benzene of tetraphenylphosphoniphenolate
Ylboronic acid salt, triphenylphosphine tetraphenyl borate salts, tetraphenyl boron salt, trifluoroboranes-n-hexylamine, trifluoroboranes mono aminoethane, tetrafluoro
Borane triethylamine and tetrafluoro borine amine.In addition it is possible to use 1,5- diazabicyclo [4.3.0] nonyl- 5- alkene (DBN), 1,8- bis-
11 carbon -7- alkene (DBU) of azabicyclo [5.4.0] and phenol resol resins salt, but not limited to this.
More specifically, these organic phosphorus compounds, boron compound, amine compounds or imidazolium compounds can be alone or in combination
Used as curing accelerator.Curing accelerator can be with by making these compounds be reacted in advance with epoxy resin or curing agent
And the form of the adduct obtained uses.
The amount of total weight based on composition epoxy resin, curing accelerator can be about 0.01wt% to about
2wt%, particularly from about 0.02wt% are to about 1.5wt%, more particularly about 0.05wt% to about 1wt%.Within the scope of this, Gu
The solidification of composition epoxy resin can be promoted by changing accelerating agent, while ensure good curing degree.
Coupling agent
Coupling agent is used to improve the boundary strength between epoxy resin and inorganic filler, and may include that such as silane is even
Join agent.Silane coupling agent can be selected from any silane coupling agent used in the art, as long as silane coupling agent can be in epoxy
Reaction is to improve the boundary strength between epoxy resin and inorganic filler between resin and inorganic filler.Silane coupling agent
Example includes epoxy silane, amino silane, ureido silane and mercaptan base silane (mercaptosilane, hydrosulphonyl silane).These
Coupling agent can be used alone or be applied in combination.
The amount of total amount based on composition epoxy resin, coupling agent can be about 0.01wt% to about 5wt%, especially
It is about 0.05wt% to about 3wt%, more particularly about 0.1wt% to about 2wt%.Within this range, coupling agent is increased by ring
The intensity for the cured product that epoxy resin composition is formed.
Releasing agent
Releasing agent may include from by paraffin, ester type waxes, higher fatty acids, higher fatty acid metal salt, natural acid and
At least one selected in the group of natural fat acid metal salt composition.
Amount of the releasing agent in composition epoxy resin can be about 0.1wt% to about 1wt%.
Colorant
Colorant is used to the encapsulating material of laser marking semiconductor device and can be selected from make in the related technical field
Typical colorant.For example, colorant may include black carbon black, titanium, titanium nitride, alkali formula cupric phosphate (dicopper
Hydroxide phosphate), at least one of iron oxide and mica.
The amount of total amount based on composition epoxy resin, colorant can be about 0.01wt% to about 5wt%, especially
It is about 0.05wt% to about 3wt%, more particularly about 0.1wt% to about 2wt%.
In addition, composition epoxy resin may further include stress release agent, such as modified silicon oil, silicone as needed
Powder and silicone resin；Antioxidant, such as four [methylene -3- (3,5- di-tert-butyl-hydroxy phenyl) propionic ester] methane
Deng, in order to avoid have an adverse effect to the purpose of the present invention.
State in use in the conventional method that component prepares composition epoxy resin, using Henschel mixing machines or
The component of Lodige mixing machines equably mix predetermined quantities then carries out melt kneading using roller mill or kneader, it is cooling simultaneously
It crushes, to obtain final powdered product.
As the method for using composition epoxy resin to encapsulate semiconductor devices, low pressure transfer molding can be used.It can replace
Ground is changed, injection moulding or casting can be used for the molding of composition epoxy resin.
By these methods, composition epoxy resin can be applied to copper lead frame (for example, silver-plated copper lead frame
Frame), nickel alloy lead frame, by the way that preplating on the lead frames is nickeliferous and the material of palladium and reuses silver-colored (Ag) and gold (Au)
At least one of be electroplated and on lead frame, PCB for obtaining etc., to encapsulate semiconductor devices, to which manufacture is wherein partly led
The semiconductor packages that body device is encapsulated by composition epoxy resin.
Invention pattern
Next, the present invention will be more fully described with reference to some embodiments.It should be understood that these examples are only used for
Illustrate, and is not construed to the limitation present invention in any way.
For the sake of clarity, the description for the details that will be apparent to those skilled in the art will be omitted.
Embodiment
The details of the component used in embodiment and comparative example is as follows.
(A) epoxy resin
(a1) biphenyl type epoxy resin (YX-4000, Japan Epoxy Resin Co., Ltd.) is used
(a2) biphenyl phenolic resin varnish type epoxy resin (NC-3000, Nippon Kayaku Co., Ltd.) is used
(B) curing agent
(b1) phenol resol resins (DL-92, Meiwa Co., Ltd.) are used
(b2) biphenyl phenolic varnish type resin (MEH-7851SS, Meiwa Co., Ltd.) is used
(C) curing accelerator：It uses TPP-k (triphenylphosphine, Hokko Chemical Co., Ltd.)
(D) inorganic filler：The ball that the spherical fused silica and average grain diameter for the use of average grain diameter being 20 μm are 0.5 μm
Mixture (the weight ratio 9 of shape fused silica:1)
(E) coupling agent
(e1) use mercaptopropyl trimethoxysilane coupling agent (KBM-803, Shin-Etsu Chemical Co.,
Ltd.)
(e2) methyltrimethoxysilane coupling agent (SZ-6070, Dow-Corning Co., Ltd.) is used
(e3) amine silane coupling agent (KBM-573, Shin-Etsu Chemical Co., Ltd.) is used
(F) triaizine compounds
(f1) triaizine compounds for using formula f1 to indicate
Phenol, 2,2'2 "-[three bases three (oxygen) of 1,3,5- triazines -2,4,6-] three -
(f2) triaizine compounds for using formula f2 to indicate
Aniline, 4,4', 4 "-[three bases three (oxygen) of 1,3,5- triazines -2,4,6-] three -
(f3) triaizine compounds for using formula f3 to indicate
[formula f3]
1,3,5- triazine -2,4,6- triamines, N2,N4,N6- three (4- aminophenyls)-
(f4) triaizine compounds for using formula f4 to indicate
[formula f4]
Benzyl alcohol, 4,4', 4 "-[three bases three (sulphur) of 1,3,5- triazines -2,4,6-] three -
(f5) triaizine compounds for using formula f5 to indicate
[formula f5]
Aniline, 4,4', 4 "-[three bases three (sulphur) of 1,3,5- triazines -2,4,6-] three -
(f6) triaizine compounds for using formula f6 to indicate
[formula f6]
1,3,5- triazines, 2,4,6- tri- [4- (2- oxiranylmethyl radicals) phenoxy group]-
(G) colorant：It uses carbon black (MA-600B, Mitsubishi Chemical Co., Ltd.)
(H) releasing agent：Use Brazil wax
Embodiment 1 to 5 and comparative example 1 to 2
Using Henschel mixing machines (KSM-22, KEUM SUNG MACHINERY CO.LTD.) at 25 DEG C to 30 DEG C
By the component weighed as shown in table 1 uniformly mixing 30 minutes, and by continuous kneader under 110 DEG C (maximum) melt kneading
30 minutes, 10 DEG C are subsequently cooled to 15 DEG C and is crushed, thus prepare the epoxy composite for encapsulating semiconductor devices
Object.
[table 1]
[unit：Wt%]
It evaluates the following property of the composition epoxy resin prepared in embodiment 1 to 5 and comparative example 1 and 2 and will survey
Results are shown in Table 2 for amount.
Properties evaluations
(1) mobility (inch)：According to EMMI-1-66, using transfer molding press, in 70kgf/cm in testing mould2
Load under the length of flow of each composition epoxy resin is measured at 175 DEG C.Numerical value is higher, and expression mobility is better.
(2) glass transition temperature (DEG C)：Using thermomechanical analyzer (TMA), each composition epoxy resin is measured
Glass transition temperature.Herein, TMA is set as that resin combination is heated to 300 DEG C from 25 DEG C with the rate of 10 DEG C/min.
(3) adhesive strength (kgf)：Prepare formed by material as shown in table 2 and with for measuring adhesive strength
The lead frame of the corresponding size of mold, and in 170 DEG C to 180 DEG C of mold temperature, 70kgf/m2Clamp pressure, 1,
Under conditions of the shift pressure and 0.5cm/s to the transfer velocity of 1cm/s of 000psi, the composition epoxy resin mould of table 1 is used
Modeling 120 seconds, thus prepares sample as shown in Figure 1.Herein, the contact area of lead frame and composition epoxy resin is set
For 40 ± 1mm2。
Each sample is placed in 170 DEG C to 180 DEG C of baking oven and is cured 4 hours afterwards, adhesive strength I is then measured.
Then, each sample is placed 120 hours under 60 DEG C and 60%RH, and carries out IR reflux 30 seconds three times at 260 DEG C, with
Adhesive strength II is measured afterwards.Adhesive strength is measured using Universal Testing Machine (UTM).In the measurements, 12 samples of measurement is viscous
It closes intensity and records the average value of the adhesive strength of 12 samples.
(4) anti-flammability：Anti-flammability is measured according to UV 94V-0 test methods
(5) reliability：Include the lead that preplating has nickel-palladium-gold by using composition epoxy resin encapsulation shown in table 1
The semiconductor devices of frame manufactures semiconductor packages.Each semiconductor packages is placed in 175 DEG C of baking oven, is then carried out
The rear solidification of two hours.Then, semiconductor package is 24 hours dry at 125 DEG C, place 120 under 60 DEG C and 60%RH
Hour, IR is then carried out at 260 DEG C and is flowed back 30 seconds, in triplicate.Hereafter, by non-destructive C-SAM, (scanning acoustics is micro-
Mirror) and optical microphotograph sem observation semiconductor packages.In 200 semiconductor packages, the semiconductor packages cracked is recorded
Number.
[table 2]
As shown in table 2, include the triaizine compounds indicated by formula 8 embodiment 1 to 5 composition epoxy resin relative to
The lead frame of a variety of materials has high adhesive strength, and the table in terms of mobility, reliability (crack resistance) and curing degree
Reveal good property.On the contrary, the composition epoxy resin of the comparative example 1 without triaizine compounds and use contain end-rings
The composition epoxy resin of comparative example 2 prepared by the triaizine compounds of oxygen groups has passive crack resistance and relative to plating Ag
The adhesive strength of lead frame and PPF lead frames is less than the composition epoxy resin of embodiment 1 to 5.
Claims (10)
1. a kind of composition epoxy resin for encapsulating semiconductor devices, including：
Epoxy resin, curing agent, inorganic filler and the triaizine compounds indicated by formula 8：
[formula 8]
(in formula 8, X and Y are each independently substituted or unsubstituted C1-10Alkyl or substituted or unsubstituted C6-20Aryl；
E is NH, O or S；
R16、R17、R18、R19And R20It is each independently hydrogen, hydroxyl, amido or mercapto；And
n1、n2、n3、n4And n5It is each independently 0 to 5 integer).
2. composition epoxy resin according to claim 1, wherein R16、R17、R18、R19And R20At least one of be hydroxyl
Base, amido or mercapto.
3. composition epoxy resin according to claim 1, wherein R17It is hydroxyl, amido or mercapto.
4. composition epoxy resin according to claim 1, wherein at least one of X and Y are the changes indicated by formula 9
Close object：
[formula 9]
(in formula 9, E is NH, O or S；
R16、R17、R18、R19And R20It is each independently hydrogen, hydroxyl, amido or mercapto；And
n1、n2、n3、n4And n5It is each independently 0 to 5 integer).
5. composition epoxy resin according to claim 1, wherein the triaizine compounds are the chemical combination indicated by formula 10
Object：
[formula 10]
(in formula 10, E is NH, O or S；
R16、R17、R18、R19And R20It is each independently hydrogen, hydroxyl, amido or mercapto；And
n1、n2、n3、n4And n5It is each independently 0 to 5 integer).
6. composition epoxy resin according to claim 1, wherein the triaizine compounds indicated by formula 8 are with about
The amount of 0.01wt% to about 0.5wt% are present in the composition epoxy resin.
7. composition epoxy resin according to claim 1, including：
The epoxy resin of about 0.1wt% to about 17wt%；
The curing agent of about 0.1wt% to about 13wt%；
The inorganic filler of about 70wt% to about 95wt%；And
The triaizine compounds indicated by formula 8 described in about 0.01wt% to about 0.5wt%.
8. composition epoxy resin according to claim 1, further includes：
At least one of curing accelerator, coupling agent, releasing agent and colorant.
9. a kind of semiconductor devices encapsulated by composition epoxy resin according to any one of claim 1 to 8.
10. semiconductor devices according to claim 9, wherein the semiconductor devices is including the use of nickeliferous and palladium material
Expect the lead frame of preplating.
Applications Claiming Priority (3)
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|---|---|---|---|
| KR10-2016-0012005 | 2016-01-29 | ||
| KR1020160012005A KR101943698B1 (en) | 2016-01-29 | 2016-01-29 | Epoxy resin composition for encapsulating semicomductor device and semiconductor device encapsulated using the same |
| PCT/KR2017/000669 WO2017131390A1 (en) | 2016-01-29 | 2017-01-19 | Epoxy resin composition for sealing semiconductor device and semiconductor device sealed by using same |
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| KR (1) | KR101943698B1 (en) |
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000038439A (en) * | 1998-07-23 | 2000-02-08 | Dainippon Ink & Chem Inc | Epoxy resin composition |
| CN1400988A (en) * | 2000-02-15 | 2003-03-05 | 荷兰解决方案研究有限公司 | Thermosetting resin composition |
| JP2005132890A (en) * | 2003-10-28 | 2005-05-26 | Sumitomo Bakelite Co Ltd | Epoxy resin composition and semiconductor device |
| CN101029166A (en) * | 2006-02-27 | 2007-09-05 | 田村化研株式会社 | Thermosetting resin compositions, resin films in b-stage and build-up multi-layer board |
| CN104119643A (en) * | 2013-04-24 | 2014-10-29 | 三星电机株式会社 | Insulating resin composition for printed circuit board, and prepreg, copper-clad laminate and printed circuit board using the same |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP4869721B2 (en) * | 2006-02-03 | 2012-02-08 | 日東電工株式会社 | Epoxy resin composition for semiconductor encapsulation, method for producing the same, and semiconductor device obtained using the same |
| KR100797967B1 (en) * | 2006-12-31 | 2008-01-24 | 제일모직주식회사 | Epoxy resin composition for encapsulating semiconductor device and semiconductor device??using the same |
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2016
- 2016-01-29 KR KR1020160012005A patent/KR101943698B1/en active IP Right Grant
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2017
- 2017-01-19 WO PCT/KR2017/000669 patent/WO2017131390A1/en active Application Filing
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Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000038439A (en) * | 1998-07-23 | 2000-02-08 | Dainippon Ink & Chem Inc | Epoxy resin composition |
| CN1400988A (en) * | 2000-02-15 | 2003-03-05 | 荷兰解决方案研究有限公司 | Thermosetting resin composition |
| JP2005132890A (en) * | 2003-10-28 | 2005-05-26 | Sumitomo Bakelite Co Ltd | Epoxy resin composition and semiconductor device |
| CN101029166A (en) * | 2006-02-27 | 2007-09-05 | 田村化研株式会社 | Thermosetting resin compositions, resin films in b-stage and build-up multi-layer board |
| CN104119643A (en) * | 2013-04-24 | 2014-10-29 | 三星电机株式会社 | Insulating resin composition for printed circuit board, and prepreg, copper-clad laminate and printed circuit board using the same |
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| Publication number | Publication date |
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| CN108602984B (en) | 2021-01-29 |
| KR101943698B1 (en) | 2019-01-29 |
| WO2017131390A1 (en) | 2017-08-03 |
| KR20170090962A (en) | 2017-08-08 |
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