CN108594596A - A method of making dimpling lens using PDMS - Google Patents
A method of making dimpling lens using PDMS Download PDFInfo
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- CN108594596A CN108594596A CN201810398597.8A CN201810398597A CN108594596A CN 108594596 A CN108594596 A CN 108594596A CN 201810398597 A CN201810398597 A CN 201810398597A CN 108594596 A CN108594596 A CN 108594596A
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0035—Multiple processes, e.g. applying a further resist layer on an already in a previously step, processed pattern or textured surface
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B3/00—Simple or compound lenses
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/0005—Production of optical devices or components in so far as characterised by the lithographic processes or materials used therefor
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Abstract
The present invention relates to lens manufacture technology fields, specially a kind of method making dimpling lens using PDMS, including clean and dry before silicon chip, gluing, photoetching baking after baking, photoetching, photoetching, make dimpling lens, detect the dimpling focal length of lens totally seven steps.The present invention by toasting twice, uv-exposure negative photoresist, the photoresist diaphragm plate that top surface is dimple lens curved surface is made, PDMS material is recycled to copy to photoresist film plate top surface to which the dimpling lens that may be mounted on simple microscope be made.The actual value of the dimpling focal length of lens of the present invention and the deviation of calculated value are less than 5%, comply fully with the requirement of object lens in simple microscope, and have many advantages, such as that cost of manufacture is cheap, method is easy, can be mass-produced, can be widely used in education of science field.
Description
Technical field
The present invention relates to lens manufacture technology field, specially a kind of method making dimpling lens using PDMS.
Background technology
Since the size heterogeneity of optical lens is big, appearance and size precision prescribed is high, small and require error of curvature small etc.
Reason, the high lens of accuracy are required to just complete using accurate process equipment and detecting instrument.It is taught according to science
Educate the application demand in field, enlargement ratio can meet teaching request at 100-300 times, therefore in recent years a kind of precision it is not high but
For the more easy bead microscope of manufacturing technology by extensive concern in the industry, preparation method is that slender glass stick is high
Warm fire flame burning is melted, and is occurred spherical drop under surface tension effects, is formed the bead of diameter very little after cooling.One diameter 2
The bead of millimeter, enlargement ratio is about 150 times, meets common scientific observation requirement, but melts glass bar using burning to make
At sphere lens, when geometric dimension be difficult to control, second is that sphere is easily deformed under the effect of gravity, third, in melting process
There may be bubble generation, therefore finally be difficult to produce this kind of bead lens in enormous quantities.
Invention content
For above-mentioned problem, a kind of method making dimpling lens using PDMS of the present invention, by toasting twice, to negative
Property photoresist carry out uv-exposure and etc. after, be made top surface be dimple lens curved surface photoresist diaphragm plate, recycle have height
The PDMS material of the characteristics such as elasticity, stable optical performance is poured on the dimple lens curved surface of photoresist diaphragm plate, is made after stripping
At the dimpling lens that may be mounted on simple microscope.The present invention dimpling lens through lenticule focal length detecting system detection after,
The actual value of the dimpling focal length of lens and the error of theoretical value are less than 5%, meet the requirement of simple microscope.It is taught according to science
The actual demand in field is educated, the present invention can be made into the dimpling lens of the enlargement ratios such as 100,200,300,400 times, and with system
Make that of low cost, method is easy, the advantages that can be mass-produced, efficiently solves the above problem.
The technical solution adopted by the present invention：
A method of making dimpling lens using PDMS, it is characterised in that include the following steps：
Step（1）：Silicon chip is cleaned and dried, i.e., first uses RCA cleaning cleaning silicon wafers, silicon chip is placed on height after the completion of cleaning
The moisture of silicon chip surface is thoroughly dried in warm heating plate；
Step（2）：Gluing uses spin coating method to be coated with last layer SU-8 negative photos in homogeneous thickness in silicon chip top surface
Glue；
Step（3）：It toasts, i.e., silicon chip is placed in baking oven before photoetching, silicon chip bottom surface is made to be come into full contact with baking oven heating plate, be arranged
Oven temperature is 60 DEG C -70 DEG C and heats 1-7 minutes, and oven temperature is warming up to 92 DEG C of -98 DEG C of heating 4-30 again after heating
Minute, silicon chip extracting standing is cooled to room temperature after heating, then touches SU-8 negative photoresists surface with metal probe,
Next step is carried out if SU-8 negative photoresists surface is without viscosity, if SU-8 negative photoresists surface toughness repeats
Heating stepses are stated until SU-8 negative photoresists surface is without viscosity；
Step（4）：Photoetching covers last layer lithography mask version in SU-8 negative photo colloids top surface, is then placed on silicon chip
Then litho machine tray center uses contact photolithography technology to carry out uv-exposure to SU-8 negative photoresists；
Step（5）：It toasts, i.e., silicon chip is placed in baking oven after photoetching, silicon chip bottom surface is made to be come into full contact with baking oven heating plate, be arranged
Oven temperature is 60 DEG C -70 DEG C and heats 1-7 minutes, and oven temperature is warming up to 92 DEG C of -98 DEG C of heating 6-12 again after heating
Minute, silicon chip standing is taken out after heating and is cooled to room temperature, and SU-8 negative photoresists after cooling form photoetching glue pattern plate, light
Photoresist template top surface is dimple lens curved surface；
Step（6）：Dimpling lens are made, i.e., PDMS material and curing agent are pressed 10:1 weight ratio is put into vacuum after being mixed
PDMS air entrapments are excluded in case, then PDMS is poured over photoetching glue pattern plate top surface
On, then silicon chip is put into vacuum drying oven, setting oven temperature is 45 DEG C of -55 DEG C of heated bakings 24 hours, baking knot
Silicon chip is taken out after beam to be cooled to room temperature, and is then the PDMS dimpling lens that complete by PDMS and the stripping of photoetching glue pattern plate.
SU-8 negative photoresists are a kind of near ultraviolet ray photoresists first, have excellent mechanical performance, thermal stability and
The advantages that corrosion resistance, using silicon chip as substrate, since absorbance is very in near-ultraviolet range for SU-8 negative photoresists
It is low, therefore can obtain that there is the thick film figure that vertical sidewall and depth-width ratio are 5 to 7 when photoresist layer light exposure uniformity,
Secondary polydimethylsiloxane is a kind of novel high molecular polymer material, and transparency is more than 95% in visible wavelength, tool
Have a characteristics such as high refractive index, low forming temperature, and the PDMS prices of raw materials are cheap, stable optical performance, have it is good high-elastic
Property, it can fit closely to ensure that the accuracy that thick film pictorial pattern replicates with photoresist surface, while PDMS can be held
PDMS is formed by curved surface microstructure and is not easy when by 200 DEG C of high temperature and being easy to remove from photoresist template surface, and removing
The characteristics of destroying, therefore making full use of above two material is coated the uniform SU-8 of a layer thickness and is born in cleaning, dry silicon chip
Property photoresist, SU-8 negative photoresists become, without viscosity, then lithography mask version to be covered in SU-8 and is born after baking before photoetching
Property photoresist on after carry out ultraviolet exposure, toasted after then carrying out photoetching, due to expose crosslinked polymer will not thermosol, because
The shape of this SU-8 negative photoresist exposed portion will not change, and unexposed part then thermosol at high temperature, so
SU-8 negative photoresists top layer is being formed curved surface in by thermal reflow process by the effect of surface tension, SU-8 negativity after cooling
Photoresist forms photoetching glue pattern plate, and photoetching glue pattern plate top surface is dimple lens curved surface, then PDMS is poured over photoetching glue pattern plate top
It is toasted on face, then cooling, stripping can be made into PDMS dimpling lens.
Further, the RCA cleanings include the following steps：
Step（1）：By a concentration of 98% H2S04With a concentration of 30% H202By 4:1 ratio is configured to SPM solution, with 120 DEG C-
150 DEG C of SPM solution cleaning silicon chips surface；
Step（2）：The metal and oxide layer of silicon chip surface are removed with 20 DEG C -25 DEG C of dilute HF solution, dilute HF solution is by HF
Solution and water press 1:200 ratio is formulated；
Step（3）：Ammonium hydroxide, hydrogen peroxide, clear water are pressed 1:1:5 ratio is configured to SC-1 solution, clear with 80 DEG C of SC-1 solution
Wash silicon chip 10 minutes；
Step（4）：Hydrochloric acid, hydrogen peroxide, clear water are pressed 1:1:5 ratio is configured to SC-2 solution, clear with 70 DEG C of SC-2 solution
Wash silicon chip 10 minutes.
RCA ablutions rely on solvent, acid, surfactant and water, can effectively remove silicon chip surface pollutant, organic matter and
Metal ion pollution removes the organic impurities of silicon chip surface with SPM solution, with DHF solution remove the aluminium of silicon chip surface, zinc,
The metals such as iron and oxide layer, metallic particles and metal pollutant are gone with SC-1 solution, and silicon chip can be effectively removed with SC-2 solution
Metal impurities.
Further, the spin coating method refers to that SU-8 negative photoresists are uniformly coated on silicon chip top by spin coater
Face, while preventing photoresist from bubble occur, after spin coating 40-50 points are stood from smooth effect using SU-8 negative photoresists
Clock can remove the ripple of spin coating generation.
Spin coating method is compared to glue spreading methods such as spray-on process, flow methods, with easy to operate, guarantee rubberization thickness is uniform
And the advantages that consistency.
Further, surfactant tetramethyl ammonium hydroxide solution and intercalating agent second is added when preparing the SC-1 solution
Ethylenediamine tetraacetic acid (EDTA) solution, the tetramethyl ammonium hydroxide solution a concentration of 2.38% and usage amount are the 0.2% of clear water amount, every liter of institute
It states SC-1 solution and 100 milligrams of edta solution is added.
Surfactant is added and intercalating agent makes the cleaning performance of SC-1 solution more preferable.
Further, the step（6）In, before PDMS is poured over photoetching glue pattern plate, first by perfluor tetrahydrochysene octyl silane
F13-TCS is uniformly attached to photoetching glue pattern plate top surface and forms anti-sticking layer after gasifying and cooling down.
It is that the stripping of PDMS and SU-8 photoetching glue pattern plates is excessively adhered in order to prevent that anti-sticking layer, which is added, improves photoetching glue pattern plate
Recycling rate of waterused.
Further, rubberization thickness is 70-180 microns.
Further, when gluing, spin coater rotating speed is 1000-6000rpm.
Further, when uv-exposure, exposure agent usage amount is 150-360mJ/cm2。
Further, the dimpling focal length of lens is detected, i.e., tested PDMS dimplings lens are placed in precision displacement table, solid half
The laser that conductor laser projects is irradiated to through beam-expanding collimation system on the dimpling lens of precision displacement table, micro- by being moved forward and backward
Convex lens makes laser focal beam spot be imaged onto in the CCD camera of precision displacement table, and the optical signal of imaging is converted by CCD camera
Digital data transmission can directly display the real focal length value of dimpling lens to calculator display organization, by comparing real focal length
Value may know that whether PDMS dimplings lens are qualified with theoretical focal length value.
According to testing result, the actual measured value of the PDMS dimplings focal length of lens and calculated value are less than 5% compared to deviation
For qualification.
According to magnifying power formula β=250（mm）/f（mm）, β is lenticule magnifying power, and f is the focal length of lenticule, it is known that micro-
Focal length of convex lens is determined by magnifying power, and further according to lenticule focal length formula f=r/ (n-1), n is material refraction coefficient 1.41, and r is
The radius of curvature of lenticule, it is known that lenticule focal length determines by radius of curvature,
Then according to curvature radius formula：R=w/2sin θ, r are lenticule radius of curvature, and w is lenticule horizontal width, and θ is micro-
Lens contact angle, it is known that lenticule radius of curvature is determined by the horizontal width and contact angle of lenticule, and the level of lenticule is wide
Degree and contact angle are then by raw material, heating temperature, heating time, spin coater rotating speed, exposure dose, the light in manufacturing process
The factors such as lithography determine.
The dimpling lens of 100 times of magnifying power are made, the dimpling focal length of lens is 2.5 millimeters, dimpling lens radius of curvature 1025
Micron, 170-200 micron of lenticule horizontal width, 150-180 microns of rubberization thickness, negative photoresist for SU-8 2025,
2035, any of which in 2050,3005,3010,3025,3035,3050,2075,2100 series, using 2075,
Spin coater rotating speed is 2000rpm when 2100 series, the use of spin coater rotating speed when remaining series is 1000rpm；Use SU-8's
2025, when 2035,2050,2075,2100 series, exposure agent usage amount is 260-360mJ/cm2, using the 3005 of SU-8,
3010, when 3025,3035,3050 series, exposure agent usage amount is 200-300mJ/cm2。
The dimpling lens of 200 times of magnifying power are made, 1.25 millimeters of the dimpling focal length of lens, dimpling lens radius of curvature 513 is micro-
Rice, 140-170 micron of dimpling lens horizontal width, 130-150 microns of rubberization thickness, negative photoresist for SU-8 2025,
2035, any of which in 2050,3005,3010,3025,3035,3050,2075,2100,2150 series uses
2075, spin coater rotating speed is 2000rpm when 2100 series, the use of spin coater rotating speed when 2150 series is 6000rpm, uses remaining
Spin coater rotating speed is 1000rpm when serial；When using the 2025 of SU-8,2035,2050,2075,2100,2150 series, exposure
Agent usage amount is 260-360mJ/cm2, when using the 3005 of SU-8,3010,3025,3035,3050 series, expose agent usage amount
For 200-300mJ/cm2。
Make the dimpling lens that magnifying power is 300 times, 0.83 millimeter of the dimpling focal length of lens, dimpling lens radius of curvature 342
Micron, 120-140 micron of dimpling lens horizontal width, 80-100 microns of rubberization thickness, negative photoresist for SU-8 2025,
3005, any of which in 3010,3025,2035,2050,3035,3050,2075,2100,2150 series uses
2025, when 3005,3010,3025 series, spin coater rotating speed is 1000rpm, when using 2035,2050,3035,3050 series,
Spin coater rotating speed is 2000rpm, and when using 2075,2100 series, spin coater rotating speed is 3000rpm, is revolved when using 2150 series
Painting machine rotating speed is 6000rpm；When using 2025,2035,2050,2075,2100,2150 series, exposure agent usage amount is 150-
215mJ/cm2, when using 3005,3010,3025,3035,3050 series, exposure agent usage amount is 150-250mJ/cm2。
When making the dimpling lens that magnifying power is 400 times, 0.625 millimeter of the dimpling focal length of lens, dimpling lens radius of curvature
256 microns, 105-120 microns of dimpling lens horizontal width, 70-90 microns of rubberization thickness, negative photoresist be SU-8 3005,
3010, any of which in 3025,2025,2035,2050,3035,3050,2075,2100,2150 series uses
3005, when 3010,3025 series, spin coater rotating speed is 1000rpm, when using 2025,2035,2050,3035,3050 series,
Spin coater rotating speed is 2000rpm, and when using 2075,2100 series, spin coater rotating speed is 3000rpm, is revolved when using 2150 series
Painting machine rotating speed is 6000rpm；When using 2025,2035,2050,2075,2100,2150 series, exposure agent usage amount is 150-
215mJ/cm2, when using 3005,3010,3025,3035,3050 series, exposure agent usage amount is 150-250mJ/cm2。
In conclusion by adopting the above-described technical solution, beneficial effects of the present invention：
A kind of method making dimpling lens using PDMS of the present invention, the advantages of making full use of PDMS material and SU-8 negative photos
The characteristics of glue exposes, after inventor's many experiments, makes rigorous making step and determines and raw material phase
Matched data area so that compared with calculated value, deviation is less than PDMS dimplings focal length of lens actual measured value obtained
5%, meet the object lens requirement of simple microscope, can be made into the dimpling lens of the amplification factors such as 100,200,300 times, meets
Conventional teaching request.Compared with prior art, this method is with cost of manufacture is cheap, method is easy, can be mass-produced
Advantage, therefore the foreground with large-scale promotion application.
Description of the drawings
Example in order to illustrate more clearly of the present invention or technical solution in the prior art, below will to embodiment or
Required attached drawing, which is done, in description of the prior art simply introduces, it is clear that the accompanying drawings in the following description is only the one of the present invention
A little examples under the premise of not paying creativeness, can also obtain according to these attached drawings to those skilled in the art
Obtain other attached drawings.
Fig. 1 dimplings lens are from being exposed to the procedure chart to complete.
Specific implementation mode
Below in conjunction with the attached drawing in present example, technical solution in the embodiment of the present invention carries out clear, complete
Ground describes, it is clear that described embodiments are only a part of the embodiments of the present invention, instead of all the embodiments.Based on this
Embodiment in invention, those of ordinary skill in the art are obtained every other without making creative work
Embodiment shall fall within the protection scope of the present invention.
Embodiment 1：
A method of 100 times of dimpling lens of amplification being made using PDMS, are included the following steps：
Step（1）：Silicon chip is cleaned and dried, i.e., first uses RCA cleaning cleaning silicon wafers, silicon chip is placed on height after the completion of cleaning
The moisture of silicon chip surface is thoroughly dried in warm heating plate；
Step（2）：Gluing uses spin coating method to be coated with last layer negative photoresist in homogeneous thickness, institute in silicon chip top surface
It is the series of SU-8 negative photoresists 2025 to state negative photoresist, and the spin coating method refers to by spin coater by negative photoresist
It is uniformly coated on silicon chip top surface, while preventing photoresist from bubble occur, the quiet from smooth effect of photoresist is utilized after spin coating
The ripple of spin coating generation can be removed for 40 minutes by setting；When gluing, spin coater rotating speed is 1000rpm, and rubberization thickness is 150 microns；
Step（3）：It toasts, i.e., silicon chip is placed in baking oven before photoetching, silicon chip bottom surface is made to be come into full contact with baking oven heating plate, be arranged
Oven temperature is 65 DEG C and heats 5 minutes that oven temperature, which is warming up to 95 DEG C, again after heating reheats 25 minutes, and heating terminates
Silicon chip extracting standing is cooled to room temperature afterwards, then negative photoresist surface is touched with metal probe, if negative photoresist surface
Next step is then carried out without viscosity, above-mentioned heating stepses are repeated if the toughness of negative photoresist surface until negative photoresist
Until surface is without viscosity；
Step（4）Step（6）As shown in Figure 1；
Step（4）：Photoetching covers last layer lithography mask version in negative photo colloid top surface, silicon chip is then placed on photoetching
Then machine tray center uses contact photolithography technology to carry out uv-exposure to negative photoresist；When uv-exposure, exposure agent makes
Dosage is 300mJ/cm2；
Step（5）：It toasts, i.e., silicon chip is placed in baking oven after photoetching, silicon chip bottom surface is made to be come into full contact with baking oven heating plate, be arranged
Oven temperature is 65 DEG C and heats 5 minutes that oven temperature, which is warming up to 95 DEG C, again after heating reheats 10 minutes, and heating terminates
It takes out silicon chip standing afterwards to be cooled to room temperature, negative photoresist forms photoresist diaphragm plate at this time, and photoresist film plate top surface is that dimple is saturating
Mirror curved surface；
Step（6）：Dimpling lens are made, i.e., PDMS material and curing agent are pressed 10:1 weight ratio is put into vacuum after being mixed
PDMS air entrapments are excluded in case, then PDMS is poured over photoetching glue pattern plate top surface
On, then silicon chip is put into vacuum drying oven, setting oven temperature is 50 DEG C and carries out heated baking 24 hours, and baking terminates
Silicon chip is taken out afterwards to be cooled to room temperature, and is then the PDMS dimpling lens that complete by PDMS and the stripping of photoetching glue pattern plate；By PDMS
Before being poured over photoetching glue pattern plate, photoetching rubber moulding is uniformly attached to after first perfluor tetrahydrochysene octyl silane F13-TCS is gasified and cooled down
Plate top surface forms anti-sticking layer；
Step（7）：The dimpling focal length of lens is detected, i.e., tested PDMS dimplings lens are placed in precision displacement table, solid semiconductor
The laser that laser projects is irradiated to through beam-expanding collimation system on the dimpling lens of precision displacement table, saturating by being moved forward and backward dimpling
Mirror makes laser focal beam spot be imaged onto in the CCD camera of precision displacement table, and the optical signal of imaging is converted into number by CCD camera
Signal transmission can directly display the real focal length value of dimpling lens to calculator display organization, by comparing real focal length value with
Theoretical focal length value may know that whether PDMS dimplings lens are qualified.
The RCA cleanings include the following steps：
Step（1）：By a concentration of 98% H2S04With a concentration of 30% H202By 4:1 ratio is configured to SPM solution, with 140 DEG C
SPM solution cleaning silicon chips surface；
Step（2）：Remove the metal and oxide layer of silicon chip surface with 22 DEG C of dilute HF solution, dilute HF solution by HF solution and
Water presses 1:200 ratio is formulated；
Step（3）：Ammonium hydroxide, hydrogen peroxide, clear water are pressed 1:1:5 ratio is configured to SC-1 solution, clear with 80 DEG C of SC-1 solution
Wash silicon chip 10 minutes；Surfactant tetramethyl ammonium hydroxide solution and intercalating agent ethylenediamine are added when the preparation SC-1 solution
Tetrem acid solution, the tetramethyl ammonium hydroxide solution a concentration of 2.38% and usage amount are the 0.2% of clear water amount, every liter described
100 milligrams of edta solution is added in SC-1 solution；
Step（4）：Hydrochloric acid, hydrogen peroxide, clear water are pressed 1:1:5 ratio is configured to SC-2 solution, clear with 70 DEG C of SC-2 solution
Wash silicon chip 10 minutes.
Embodiment 2：
A method of 200 times of dimpling lens of amplification being made using PDMS, are included the following steps：
Step（1）：Silicon chip is cleaned and dried, i.e., first uses RCA cleaning cleaning silicon wafers, silicon chip is placed on height after the completion of cleaning
The moisture of silicon chip surface is thoroughly dried in warm heating plate；
Step（2）：Gluing uses spin coating method to be coated with last layer negative photoresist in homogeneous thickness, institute in silicon chip top surface
It is the series of SU-8 negative photoresists 2150 to state negative photoresist, and the spin coating method refers to by spin coater by negative photoresist
It is uniformly coated on silicon chip top surface, while preventing photoresist from bubble occur, the quiet from smooth effect of photoresist is utilized after spin coating
The ripple of spin coating generation can be removed for 50 minutes by setting；When gluing, spin coater rotating speed is 6000rpm, and rubberization thickness is 130 microns；
Step（3）：It toasts, i.e., silicon chip is placed in baking oven before photoetching, silicon chip bottom surface is made to be come into full contact with baking oven heating plate, be arranged
Oven temperature is 65 DEG C and heats 5 minutes that oven temperature, which is warming up to 95 DEG C, again after heating reheats 20 minutes, and heating terminates
Silicon chip extracting standing is cooled to room temperature afterwards, then negative photoresist surface is touched with metal probe, if negative photoresist surface
Next step is then carried out without viscosity, above-mentioned heating stepses are repeated if the toughness of negative photoresist surface until negative photoresist
Until surface is without viscosity；
Step（4）Step（6）As shown in Figure 1；
Step（4）：Photoetching covers last layer lithography mask version in negative photo colloid top surface, silicon chip is then placed on photoetching
Then machine tray center uses contact photolithography technology to carry out uv-exposure to negative photoresist；When uv-exposure, exposure agent makes
Dosage is 350mJ/cm2；
Step（5）：It toasts, i.e., silicon chip is placed in baking oven after photoetching, silicon chip bottom surface is made to be come into full contact with baking oven heating plate, be arranged
Oven temperature is 65 DEG C and heats 5 minutes that oven temperature, which is warming up to 95 DEG C, again after heating reheats 12 minutes, and heating terminates
It takes out silicon chip standing afterwards to be cooled to room temperature, negative photoresist forms photoresist diaphragm plate at this time, and photoresist film plate top surface is that dimple is saturating
Mirror curved surface；
Step（6）：Dimpling lens are made, i.e., PDMS material and curing agent are pressed 10:1 weight ratio is put into vacuum after being mixed
PDMS air entrapments are excluded in case, then PDMS is poured over photoetching glue pattern plate top surface
On, then silicon chip is put into vacuum drying oven, setting oven temperature is 52 DEG C and carries out heated baking 24 hours, and baking terminates
Silicon chip is taken out afterwards to be cooled to room temperature, and is then the PDMS dimpling lens that complete by PDMS and the stripping of photoetching glue pattern plate；By PDMS
Before being poured over photoetching glue pattern plate, photoetching rubber moulding is uniformly attached to after first perfluor tetrahydrochysene octyl silane F13-TCS is gasified and cooled down
Plate top surface forms anti-sticking layer；
Step（7）：The dimpling focal length of lens is detected, i.e., tested PDMS dimplings lens are placed in precision displacement table, solid semiconductor
The laser that laser projects is irradiated to through beam-expanding collimation system on the dimpling lens of precision displacement table, saturating by being moved forward and backward dimpling
Mirror makes laser focal beam spot be imaged onto in the CCD camera of precision displacement table, and the optical signal of imaging is converted into number by CCD camera
Signal transmission can directly display the real focal length value of dimpling lens to calculator display organization, by comparing real focal length value with
Theoretical focal length value may know that whether PDMS dimplings lens are qualified.
The RCA cleanings include the following steps：
Step（1）：By a concentration of 98% H2S04With a concentration of 30% H202By 4:1 ratio is configured to SPM solution, with 120 DEG C
SPM solution cleaning silicon chips surface；
Step（2）：Remove the metal and oxide layer of silicon chip surface with 20 DEG C of dilute HF solution, dilute HF solution by HF solution and
Water presses 1:200 ratio is formulated；
Step（3）：Ammonium hydroxide, hydrogen peroxide, clear water are pressed 1:1:5 ratio is configured to SC-1 solution, clear with 80 DEG C of SC-1 solution
Wash silicon chip 10 minutes；Surfactant tetramethyl ammonium hydroxide solution and intercalating agent ethylenediamine are added when the preparation SC-1 solution
Tetrem acid solution, the tetramethyl ammonium hydroxide solution a concentration of 2.38% and usage amount are the 0.2% of clear water amount, every liter described
100 milligrams of edta solution is added in SC-1 solution；
Step（4）：Hydrochloric acid, hydrogen peroxide, clear water are pressed 1:1:5 ratio is configured to SC-2 solution, clear with 70 DEG C of SC-2 solution
Wash silicon chip 10 minutes.
Embodiment 3：
A method of 300 times of dimpling lens of amplification being made using PDMS, are included the following steps：
Step（1）：Silicon chip is cleaned and dried, i.e., first uses RCA cleaning cleaning silicon wafers, silicon chip is placed on height after the completion of cleaning
The moisture of silicon chip surface is thoroughly dried in warm heating plate；
Step（2）：Gluing uses spin coating method to be coated with last layer negative photoresist in homogeneous thickness, institute in silicon chip top surface
It is the series of SU-8 negative photoresists 3035 to state negative photoresist, and the spin coating method refers to by spin coater by negative photoresist
It is uniformly coated on silicon chip top surface, while preventing photoresist from bubble occur, the quiet from smooth effect of photoresist is utilized after spin coating
The ripple of spin coating generation can be removed for 45 minutes by setting；When gluing, spin coater rotating speed is 2000rpm, and rubberization thickness is 80 microns；
Step（3）：It toasts, i.e., silicon chip is placed in baking oven before photoetching, silicon chip bottom surface is made to be come into full contact with baking oven heating plate, be arranged
Oven temperature is 65 DEG C and heats 3 minutes that oven temperature, which is warming up to 95 DEG C, again after heating reheats 10 minutes, and heating terminates
Silicon chip extracting standing is cooled to room temperature afterwards, then negative photoresist surface is touched with metal probe, if negative photoresist surface
Next step is then carried out without viscosity, above-mentioned heating stepses are repeated if the toughness of negative photoresist surface until negative photoresist
Until surface is without viscosity；
Step（4）Step（6）As shown in Figure 1；
Step（4）：Photoetching covers last layer lithography mask version in negative photo colloid top surface, silicon chip is then placed on photoetching
Then machine tray center uses contact photolithography technology to carry out uv-exposure to negative photoresist；When uv-exposure, exposure agent makes
Dosage is 200mJ/cm2；
Step（5）：It toasts, i.e., silicon chip is placed in baking oven after photoetching, silicon chip bottom surface is made to be come into full contact with baking oven heating plate, be arranged
Oven temperature is 65 DEG C and heats 2 minutes that oven temperature, which is warming up to 95 DEG C, again after heating reheats 10 minutes, and heating terminates
It takes out silicon chip standing afterwards to be cooled to room temperature, photoresist diaphragm plate is made in negative photoresist at this time, and photoresist film plate top surface is that dimple is saturating
Mirror curved surface；
Step（6）：Dimpling lens are made, i.e., PDMS material and curing agent are pressed 10:1 weight ratio is put into vacuum after being mixed
PDMS air entrapments are excluded in case, then PDMS is poured over photoetching glue pattern plate top surface
On, then silicon chip is put into vacuum drying oven, setting oven temperature is 55 DEG C and carries out heated baking 24 hours, and baking terminates
Silicon chip is taken out afterwards to be cooled to room temperature, and is then the PDMS dimpling lens that complete by PDMS and the stripping of photoetching glue pattern plate；By PDMS
Before being poured over photoetching glue pattern plate, photoetching rubber moulding is uniformly attached to after first perfluor tetrahydrochysene octyl silane F13-TCS is gasified and cooled down
Plate top surface forms anti-sticking layer；
Step（7）：The dimpling focal length of lens is detected, i.e., tested PDMS dimplings lens are placed in precision displacement table, solid semiconductor
The laser that laser projects is irradiated to through beam-expanding collimation system on the dimpling lens of precision displacement table, saturating by being moved forward and backward dimpling
Mirror makes laser focal beam spot be imaged onto in the CCD camera of precision displacement table, and the optical signal of imaging is converted into number by CCD camera
Signal transmission can directly display the real focal length value of dimpling lens to calculator display organization, by comparing real focal length value with
Theoretical focal length value may know that whether PDMS dimplings lens are qualified.
The RCA cleanings include the following steps：
Step（1）：By a concentration of 98% H2S04With a concentration of 30% H202By 4:1 ratio is configured to SPM solution, with 150 DEG C
SPM solution cleaning silicon chips surface；
Step（2）：Remove the metal and oxide layer of silicon chip surface with 25 DEG C of dilute HF solution, dilute HF solution by HF solution and
Water presses 1:200 ratio is formulated；
Step（3）：Ammonium hydroxide, hydrogen peroxide, clear water are pressed 1:1:5 ratio is configured to SC-1 solution, clear with 80 DEG C of SC-1 solution
Wash silicon chip 10 minutes；Surfactant tetramethyl ammonium hydroxide solution and intercalating agent ethylenediamine are added when the preparation SC-1 solution
Tetrem acid solution, the tetramethyl ammonium hydroxide solution a concentration of 2.38% and usage amount are the 0.2% of clear water amount, every liter described
100 milligrams of edta solution is added in SC-1 solution；
Step（4）：Hydrochloric acid, hydrogen peroxide, clear water are pressed 1:1:5 ratio is configured to SC-2 solution, clear with 70 DEG C of SC-2 solution
Wash silicon chip 10 minutes.
Embodiment 4：
A method of 400 times of dimpling lens of amplification being made using PDMS, are included the following steps：
Step（1）：Silicon chip is cleaned and dried, i.e., first uses RCA cleaning cleaning silicon wafers, silicon chip is placed on height after the completion of cleaning
The moisture of silicon chip surface is thoroughly dried in warm heating plate；
Step（2）：Gluing uses spin coating method to be coated with last layer negative photoresist in homogeneous thickness, institute in silicon chip top surface
It is the series of SU-8 negative photoresists 2100 to state negative photoresist, and the spin coating method refers to by spin coater by negative photoresist
It is uniformly coated on silicon chip top surface, while preventing photoresist from bubble occur, the quiet from smooth effect of photoresist is utilized after spin coating
The ripple of spin coating generation can be removed for 48 minutes by setting；When gluing, spin coater rotating speed is 3000rpm, and rubberization thickness is 70 microns；
Step（3）：It toasts, i.e., silicon chip is placed in baking oven before photoetching, silicon chip bottom surface is made to be come into full contact with baking oven heating plate, be arranged
Oven temperature is 65 DEG C and heats 2 minutes that oven temperature, which is warming up to 95 DEG C, again after heating reheats 6 minutes, and heating terminates
Silicon chip extracting standing is cooled to room temperature afterwards, then negative photoresist surface is touched with metal probe, if negative photoresist surface
Next step is then carried out without viscosity, above-mentioned heating stepses are repeated if the toughness of negative photoresist surface until negative photoresist
Until surface is without viscosity；
Step（4）Step（6）As shown in Figure 1；
Step（4）：Photoetching covers last layer lithography mask version in negative photo colloid top surface, silicon chip is then placed on photoetching
Then machine tray center uses contact photolithography technology to carry out uv-exposure to negative photoresist；When uv-exposure, exposure agent makes
Dosage is 180mJ/cm2；
Step（5）：It toasts, i.e., silicon chip is placed in baking oven after photoetching, silicon chip bottom surface is made to be come into full contact with baking oven heating plate, be arranged
Oven temperature is 65 DEG C and heats 2 minutes that oven temperature, which is warming up to 95 DEG C, again after heating reheats 7 minutes, and heating terminates
It takes out silicon chip standing afterwards to be cooled to room temperature, photoresist diaphragm plate is made in negative photoresist at this time, and photoresist film plate top surface is that dimple is saturating
Mirror curved surface；
Step（6）：Dimpling lens are made, i.e., PDMS material and curing agent are pressed 10:1 weight ratio is put into vacuum after being mixed
PDMS air entrapments are excluded in case, then PDMS is poured over photoetching glue pattern plate top surface
On, then silicon chip is put into vacuum drying oven, setting oven temperature is 50 DEG C and carries out heated baking 24 hours, and baking terminates
Silicon chip is taken out afterwards to be cooled to room temperature, and is then the PDMS dimpling lens that complete by PDMS and the stripping of photoetching glue pattern plate；By PDMS
Before being poured over photoetching glue pattern plate, photoetching rubber moulding is uniformly attached to after first perfluor tetrahydrochysene octyl silane F13-TCS is gasified and cooled down
Plate top surface forms anti-sticking layer；
Step（7）：The dimpling focal length of lens is detected, i.e., tested PDMS dimplings lens are placed in precision displacement table, solid semiconductor
The laser that laser projects is irradiated to through beam-expanding collimation system on the dimpling lens of precision displacement table, saturating by being moved forward and backward dimpling
Mirror makes laser focal beam spot be imaged onto in the CCD camera of precision displacement table, and the optical signal of imaging is converted into number by CCD camera
Signal transmission can directly display the real focal length value of dimpling lens to calculator display organization, by comparing real focal length value with
Theoretical focal length value may know that whether PDMS dimplings lens are qualified.
The RCA cleanings include the following steps：
Step（1）：By a concentration of 98% H2S04With a concentration of 30% H202By 4:1 ratio is configured to SPM solution, with 130 DEG C
SPM solution cleaning silicon chips surface；
Step（2）：Remove the metal and oxide layer of silicon chip surface with 23 DEG C of dilute HF solution, dilute HF solution by HF solution and
Water presses 1:200 ratio is formulated；
Step（3）：Ammonium hydroxide, hydrogen peroxide, clear water are pressed 1:1:5 ratio is configured to SC-1 solution, clear with 80 DEG C of SC-1 solution
Wash silicon chip 10 minutes；Surfactant tetramethyl ammonium hydroxide solution and intercalating agent ethylenediamine are added when the preparation SC-1 solution
Tetrem acid solution, the tetramethyl ammonium hydroxide solution a concentration of 2.38% and usage amount are the 0.2% of clear water amount, every liter described
100 milligrams of edta solution is added in SC-1 solution；
Step（4）：Hydrochloric acid, hydrogen peroxide, clear water are pressed 1:1:5 ratio is configured to SC-2 solution, clear with 70 DEG C of SC-2 solution
Wash silicon chip 10 minutes.
The foregoing is merely illustrative of the preferred embodiments of the present invention, is not intended to limit the invention, all essences in the present invention
With within principle, any modification, equivalent replacement, improvement and so on should be included within the protection domain of invention god.
Claims (9)
1. a kind of method making dimpling lens using PDMS, it is characterised in that include the following steps：
Step（1）：Silicon chip is cleaned and dried, i.e., first uses RCA cleaning cleaning silicon wafers, silicon chip is placed on height after the completion of cleaning
The moisture of silicon chip surface is thoroughly dried in warm heating plate；
Step（2）：Gluing uses spin coating method to be coated with last layer SU-8 negative photos in homogeneous thickness in silicon chip top surface
Glue；
Step（3）：It toasts, i.e., silicon chip is placed in baking oven before photoetching, silicon chip bottom surface is made to be come into full contact with baking oven heating plate, be arranged
Oven temperature is 60 DEG C -70 DEG C and heats 1-7 minutes, and oven temperature is warming up to 92 DEG C of -98 DEG C of heating 4-30 again after heating
Minute, silicon chip extracting standing is cooled to room temperature after heating, then touches SU-8 negative photoresists surface with metal probe,
Next step is carried out if SU-8 negative photoresists surface is without viscosity, if SU-8 negative photoresists surface toughness repeats
Heating stepses are stated until SU-8 negative photoresists surface is without viscosity；
Step（4）：Photoetching covers last layer lithography mask version in SU-8 negative photo colloids top surface, is then placed on silicon chip
Then litho machine tray center uses contact photolithography technology to carry out uv-exposure to SU-8 negative photoresists；
Step（5）：It toasts, i.e., silicon chip is placed in baking oven after photoetching, silicon chip bottom surface is made to be come into full contact with baking oven heating plate, be arranged
Oven temperature is 60 DEG C -70 DEG C and heats 1-7 minutes, and oven temperature is warming up to 92 DEG C of -98 DEG C of heating 6-12 again after heating
Minute, silicon chip standing is taken out after heating and is cooled to room temperature, and SU-8 negative photoresists after cooling form photoetching glue pattern plate, light
Photoresist template top surface is dimple lens curved surface；
Step（6）：Dimpling lens are made, i.e., PDMS material and curing agent are pressed 10:1 weight ratio is put into vacuum after being mixed
PDMS air entrapments are excluded in case, then PDMS is poured over photoetching glue pattern plate top surface
On, then silicon chip is put into vacuum drying oven, setting oven temperature is 45 DEG C of -55 DEG C of heated bakings 24 hours, baking knot
Silicon chip is taken out after beam to be cooled to room temperature, and is then the PDMS dimpling lens that complete by PDMS and the stripping of photoetching glue pattern plate.
2. a kind of method making dimpling lens using PDMS according to claim 1, it is characterised in that the RCA cleanings
Technique includes the following steps：
Step（1）：By a concentration of 98% H2S04With a concentration of 30% H202By 4:1 ratio is configured to SPM solution, with 120 DEG C-
150 DEG C of SPM solution cleaning silicon chips surface；
Step（2）：The metal and oxide layer of silicon chip surface are removed with 20 DEG C -25 DEG C of dilute HF solution, dilute HF solution is by HF
Solution and water press 1:200 ratio is formulated；
Step（3）：Ammonium hydroxide, hydrogen peroxide, clear water are pressed 1:1:5 ratio is configured to SC-1 solution, clear with 80 DEG C of SC-1 solution
Wash silicon chip 10 minutes；
Step（4）：Hydrochloric acid, hydrogen peroxide, clear water are pressed 1:1:5 ratio is configured to SC-2 solution, clear with 70 DEG C of SC-2 solution
Wash silicon chip 10 minutes.
3. a kind of method making dimpling lens using PDMS according to claim 1, it is characterised in that：The rotation applies
Glue method refers to SU-8 negative photoresists being uniformly coated on silicon chip top surface by spin coater, while preventing photoresist from bubble occur,
The ripple that can be removed spin coating for 40-50 minutes and generate is stood from smooth effect using SU-8 negative photoresists after spin coating.
4. a kind of method making dimpling lens using PDMS according to claim 2, it is characterised in that：Described in preparation
Surfactant tetramethyl ammonium hydroxide solution and intercalating agent edta solution, the tetramethyl are added when SC-1 solution
Ammonia a concentration of 2.38% and usage amount are the 0.2% of clear water amount, and ethylenediamine tetrem is added in every liter of SC-1 solution
100 milligrams of acid solution.
5. a kind of method making dimpling lens using PDMS according to claim 1, it is characterised in that：The step
（6）In, it is uniformly attached after first perfluor tetrahydrochysene octyl silane F13-TCS is gasified and cooled down before PDMS is poured over photoetching glue pattern plate
It and forms anti-sticking layer in photoetching glue pattern plate top surface.
6. a kind of method making dimpling lens using PDMS according to claim 1, it is characterised in that：Rubberization thickness is
70-180 microns.
7. a kind of method making dimpling lens using PDMS according to claim 3, it is characterised in that：When gluing, rotation
Painting machine rotating speed is 1000-6000rpm.
8. a kind of method making dimpling lens using PDMS according to claim 1, it is characterised in that：Uv-exposure
When, exposure agent usage amount is 150-360mJ/cm2。
9. a kind of method making dimpling lens using PDMS according to claim 1, it is characterised in that further include step
（7）：The dimpling focal length of lens is detected, i.e., tested PDMS dimplings lens are placed in precision displacement table, solid-state, semiconductor laser is penetrated
The laser gone out is irradiated to through beam-expanding collimation system on the dimpling lens of precision displacement table, by being moved forward and backward dimpling lens, makes to swash
Light focal beam spot is imaged onto in the CCD camera of precision displacement table, and the optical signal of imaging is converted into digital data transmission by CCD camera
The real focal length value that dimpling lens can be directly displayed to calculator display organization, by comparing real focal length value and theoretical focal length
Value may know that whether PDMS dimplings lens are qualified.
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