CN108574022A - 一种铝镓氮基日盲紫外探测器及其制备方法 - Google Patents
一种铝镓氮基日盲紫外探测器及其制备方法 Download PDFInfo
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- 229910002601 GaN Inorganic materials 0.000 title claims abstract description 24
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 title claims abstract description 22
- 238000002360 preparation method Methods 0.000 title claims abstract description 20
- 239000000758 substrate Substances 0.000 claims abstract description 23
- 238000005530 etching Methods 0.000 claims abstract description 9
- 238000000034 method Methods 0.000 claims abstract description 7
- 239000000463 material Substances 0.000 claims abstract description 5
- 229910052594 sapphire Inorganic materials 0.000 claims abstract description 5
- 239000010980 sapphire Substances 0.000 claims abstract description 5
- 238000009434 installation Methods 0.000 claims abstract description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 22
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 claims description 18
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 18
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 18
- 229910002704 AlGaN Inorganic materials 0.000 claims description 13
- 229910052759 nickel Inorganic materials 0.000 claims description 11
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 9
- SWXVUIWOUIDPGS-UHFFFAOYSA-N diacetone alcohol Natural products CC(=O)CC(C)(C)O SWXVUIWOUIDPGS-UHFFFAOYSA-N 0.000 claims description 9
- 235000019441 ethanol Nutrition 0.000 claims description 9
- 229910052757 nitrogen Inorganic materials 0.000 claims description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 8
- 229910052710 silicon Inorganic materials 0.000 claims description 8
- 239000010703 silicon Substances 0.000 claims description 8
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 claims description 6
- 238000000137 annealing Methods 0.000 claims description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 6
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 5
- 229910052733 gallium Inorganic materials 0.000 claims description 5
- 229910021529 ammonia Inorganic materials 0.000 claims description 3
- 238000001312 dry etching Methods 0.000 claims description 3
- 238000000313 electron-beam-induced deposition Methods 0.000 claims description 3
- 230000010355 oscillation Effects 0.000 claims description 3
- 239000002002 slurry Substances 0.000 claims description 3
- 238000000825 ultraviolet detection Methods 0.000 claims description 3
- 238000005229 chemical vapour deposition Methods 0.000 claims description 2
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 claims description 2
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 claims description 2
- 238000001514 detection method Methods 0.000 abstract description 4
- 238000005516 engineering process Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 3
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000004458 analytical method Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000012742 biochemical analysis Methods 0.000 description 1
- 238000002485 combustion reaction Methods 0.000 description 1
- 239000003814 drug Substances 0.000 description 1
- 239000007792 gaseous phase Substances 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 239000011347 resin Substances 0.000 description 1
- 229920005989 resin Polymers 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 229910002058 ternary alloy Inorganic materials 0.000 description 1
- 238000010792 warming Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/184—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
- H01L31/1844—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP comprising ternary or quaternary compounds, e.g. Ga Al As, In Ga As P
- H01L31/1848—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP comprising ternary or quaternary compounds, e.g. Ga Al As, In Ga As P comprising nitride compounds, e.g. InGaN, InGaAlN
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/184—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
- H01L31/1852—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP comprising a growth substrate not being an AIIIBV compound
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- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/544—Solar cells from Group III-V materials
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Abstract
本发明公开了紫外探测器技术领域的一种铝镓氮基日盲紫外探测器,包括衬底,所述衬底的顶部设置有缓冲层,所述缓冲层的顶部设置有吸收层,所述吸收层的顶部设置有电极,所述衬底采用蓝宝石材料制成,该铝镓氮基日盲紫外探测器的制备方法包括以下步骤:S1:清洁衬底;S2:制备缓冲层;S3:制备吸收层;S4:冲洗;S5:制备沉积层;S6:蚀刻;S7:制备电极;S8:组合、安装,该发明提出的一种铝镓氮基日盲紫外探测器及其制备方法,工艺流程简单,成本低廉,能够实现日盲探测。
Description
技术领域
本发明涉及紫外探测器技术领域,具体为一种铝镓氮基日盲紫外探测器及其制备方法。
背景技术
紫外探测技术是继红外和激光探测技术之后发展起来的又一重要光电探测技术,已成功应用于紫外光通信、紫外告警、紫外侦察及紫外制导等领域。在军事上,紫外探测技术可用于导弹制导、导弹预警、紫外通讯和生化分析等领域;在民用领域中,可用于火焰探测、生物医药分析、臭氧检测、紫外树脂固化、燃烧工程等领域,GaN三元合金系AlGaN随Al组分的变化,禁带宽度可以从GaN的3.4eV连续变化到AlN的6.2eV,对应的截止波长可以连续地从365nm变化到200nm.,覆盖了地球上大气臭氧层吸收主要窗口200~280nm,是制作太阳盲区紫外探测器的理想材料之一。现有的铝镓氮基日盲紫外探测器制作流程复杂,成本较为昂贵,无法达到日盲要求,为此,我们提出一种铝镓氮基日盲紫外探测器及其制备方法。
发明内容
本发明的目的在于提供一种铝镓氮基日盲紫外探测器及其制备方法,以解决上述背景技术中提出的现有的铝镓氮基日盲紫外探测器制作流程复杂,成本较为昂贵,无法达到日盲要求的问题。
为实现上述目的,本发明提供如下技术方案:一种铝镓氮基日盲紫外探测器,包括衬底,所述衬底的顶部设置有缓冲层,所述缓冲层的顶部设置有吸收层,所述吸收层的顶部设置有电极。
优选的,所述衬底采用蓝宝石材料制成。
优选的,该铝镓氮基日盲紫外探测器的制备方法包括以下步骤:
S1:清洁衬底:将衬底依次使用丙酮和乙醇置于超声波震荡器内震荡5分钟,采用氮气气枪吹干;
S2:制备缓冲层:将步骤S1中得到的清洁的衬底通过氨气和铝源,采用化学气相沉淀法制备AlN缓冲层;
S3:制备吸收层:将步骤S2中得到的AlN缓冲层同时通入镓源和铝源,继续通入氨气,进行AlGaN吸收层的制备,且AlGaN的生长时间为1小时;
S4:冲洗:AlGaN吸收层生长完成后采用丙酮和乙醇依次清洗杂尘,再采用纯水进行清洗,最后采用采用氮气气枪吹干;
S5:制备沉积层:在AlGaN吸收层的顶部通过电子枪蒸镀一层镍薄膜,采用丙酮和乙醇依次清洗杂尘,再采用纯水进行清洗,最后采用采用氮气气枪吹干;
S6:蚀刻:先采用以硫酸为主的溶液进行镍薄膜的蚀刻,再采用高密度电浆蚀刻系统进行干式蚀刻,蚀刻出电极图形,去除镍薄膜;
S7:制备电极:通过光刻形成电极图案,再采用电子束沉积生长电极,然后再经过退火处理;
S8:组合、安装:进行组合和修整,封装在紫外探测器的管壳上。
优选的,所述步骤S3中的镓源和铝源分别为三甲基镓和三甲基铝。
优选的,所述步骤S5中镍薄膜的厚度为35nm,所述S6中电极图形深度为100nm。
优选的,所述步骤S7中的退火温度为700℃,退火时间为1分钟。
与现有技术相比,本发明的有益效果是:该发明提出的一种铝镓氮基日盲紫外探测器及其制备方法,工艺流程简单,成本低廉,能够实现日盲探测。
附图说明
图1为本发明结构示意图;
图2为本发明制备方法流程图。
图中:1衬底、2缓冲层、3吸收层、4电极。
具体实施方式
下面将结合本发明实施例中的附图,对本发明实施例中的技术方案进行清楚、完整地描述,显然,所描述的实施例仅仅是本发明一部分实施例,而不是全部的实施例。基于本发明中的实施例,本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例,都属于本发明保护的范围。
请参阅图1-2,本发明提供一种技术方案:一种铝镓氮基日盲紫外探测器,包括衬底1,所述衬底1的顶部设置有缓冲层2,所述缓冲层2的顶部设置有吸收层3,所述吸收层3的顶部设置有电极4。
其中,所述衬底1采用蓝宝石材料制成,蓝宝石衬底的生产技术成熟、器件质量较好,稳定性很好,能够运用在高温生长过程中,机械强度高,易于处理和清洗。
该铝镓氮基日盲紫外探测器的制备方法包括以下步骤:
S1:清洁衬底1:将衬底1依次使用丙酮和乙醇置于超声波震荡器内震荡5分钟,采用氮气气枪吹干;
S2:制备缓冲层2:将步骤S1中得到的清洁的衬底通过氨气和铝源,采用化学气相沉淀法制备AlN缓冲层;
S3:制备吸收层3:将步骤S2中得到的AlN缓冲层同时通入镓源和铝源,继续通入氨气,进行AlGaN吸收层的制备,且AlGaN的生长时间为1小时;
S4:冲洗:AlGaN吸收层生长完成后采用丙酮和乙醇依次清洗杂尘,再采用纯水进行清洗,最后采用采用氮气气枪吹干;
S5:制备沉积层:在AlGaN吸收层的顶部通过电子枪蒸镀一层镍薄膜,采用丙酮和乙醇依次清洗杂尘,再采用纯水进行清洗,最后采用采用氮气气枪吹干;
S6:蚀刻:先采用以硫酸为主的溶液进行镍薄膜的蚀刻,再采用高密度电浆蚀刻系统进行干式蚀刻,蚀刻出电极图形,去除镍薄膜;
S7:制备电极4:通过光刻形成电极图案,再采用电子束沉积生长电极,然后再经过退火处理;
S8:组合、安装:进行组合和修整,封装在紫外探测器的管壳上。
尽管已经示出和描述了本发明的实施例,对于本领域的普通技术人员而言,可以理解在不脱离本发明的原理和精神的情况下可以对这些实施例进行多种变化、修改、替换和变型,本发明的范围由所附权利要求及其等同物限定。
Claims (6)
1.一种铝镓氮基日盲紫外探测器,包括衬底(1),其特征在于:所述衬底(1)的顶部设置有缓冲层(2),所述缓冲层(2)的顶部设置有吸收层(3),所述吸收层(3)的顶部设置有电极(4)。
2.根据权利要求1所述的一种铝镓氮基日盲紫外探测器,其特征在于:所述衬底(1)采用蓝宝石材料制成。
3.一种铝镓氮基日盲紫外探测器的制备方法,其特征在于:该铝镓氮基日盲紫外探测器的制备方法包括以下步骤:
S1:清洁衬底(1):将衬底(1)依次使用丙酮和乙醇置于超声波震荡器内震荡5分钟,采用氮气气枪吹干;
S2:制备缓冲层(2):将步骤S1中得到的清洁的衬底通过氨气和铝源,采用化学气相沉淀法制备AlN缓冲层;
S3:制备吸收层(3):将步骤S2中得到的AlN缓冲层同时通入镓源和铝源,继续通入氨气,进行AlGaN吸收层的制备,且AlGaN的生长时间为1小时;
S4:冲洗:AlGaN吸收层生长完成后采用丙酮和乙醇依次清洗杂尘,再采用纯水进行清洗,最后采用采用氮气气枪吹干;
S5:制备沉积层:在AlGaN吸收层的顶部通过电子枪蒸镀一层镍薄膜,采用丙酮和乙醇依次清洗杂尘,再采用纯水进行清洗,最后采用采用氮气气枪吹干;
S6:蚀刻:先采用以硫酸为主的溶液进行镍薄膜的蚀刻,再采用高密度电浆蚀刻系统进行干式蚀刻,蚀刻出电极图形,去除镍薄膜;
S7:制备电极(4):通过光刻形成电极图案,再采用电子束沉积生长电极,然后再经过退火处理;
S8:组合、安装:进行组合和修整,封装在紫外探测器的管壳上。
4.根据权利要求3所述的一种铝镓氮基日盲紫外探测器的制备方法,其特征在于:所述步骤S3中的镓源和铝源分别为三甲基镓和三甲基铝。
5.根据权利要求3所述的一种铝镓氮基日盲紫外探测器的制备方法,其特征在于:所述步骤S5中镍薄膜的厚度为35nm,所述S6中电极图形深度为100nm。
6.根据权利要求3所述的一种铝镓氮基日盲紫外探测器的制备方法,其特征在于:所述步骤S7中的退火温度为700℃,退火时间为1分钟。
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